Method and apparatus for monetizing non-linear polar material process development

Abstract

A method for pricing ferroelectric process development is described. In at least one embodiment, the method includes acquiring a target material based on a model-driven selection, the model-driven selection being based on the target material's charge, mass, magnetic moment, and / or atomic composition. The method further includes applying the target material to a manufacturing process to construct a ferroelectric device. The method further includes generating a notification displaying the acquisition and application of the target material. The method further includes electronically transmitting the notification to a customer, wherein the notification includes a list of items related to the cost of acquiring the target material and the application of the target material.

Description

Method for developing a process for nonlinear polar materials, method for pricing process development, and method for process development At least one embodiment relates to process development for nonlinear polar materials and devices. For example, at least one embodiment relates to processes for obtaining materials based on the various novel techniques described herein for use in manufacturing devices comprising nonlinear polar materials and pricing the process. This application claims priority to U.S. patent application No. 18 / 088,413, filed on December 23, 2022, entitled “Iterative Monetization Of Process Development Of Non-Linear Polar Materials and Devices,” the entire contents of which are incorporated by reference. Developing a process to manufacture these devices is a complex process. Examples of these devices include devices with nonlinear polar materials (e.g., ferroelectrics, paraelectrics, nonlinear dielectrics), and transistors coupled to these devices. Extensive research and development is required to develop a process that can then be applied by manufacturers. In at least one embodiment, a method for process development of nonlinear polar materials is described. In at least one embodiment, the method includes obtaining target material. In at least one embodiment, the method includes applying the target material to a manufacturing process for constructing a device having the nonlinear polar material. In at least one embodiment, the method includes generating a notification indicating the acquisition of the target material and the application of the target material. In at least one embodiment, the method includes electronically transmitting the notification to a customer, wherein the notification includes a first line item related to the cost of obtaining the target material and the application of the target material. In at least one embodiment, an iterative method for pricing one or more semiconductor device development aspects is provided. In at least one embodiment, a method or scheme for pricing target material acquisition and / or target material application in a manufacturing process is described. In at least one embodiment, target material is acquired. In at least one embodiment, the target material can be selected based on a model driven selection based on the charge, mass and magnetic moment, and / or atomic composition of the target material. In at least one embodiment, the target material is based on a professional providing the target material. In at least one embodiment, the target material is applied in a manufacturing process to construct a ferroelectric device. In at least one embodiment, a notification is generated indicating the acquisition of the target material and the application of the target material. In at least one embodiment, the notification is electronically transmitted to a customer. In at least one embodiment, the notification includes a list having a first line item related to the cost of acquiring the target material and the application of the target material. In at least one embodiment, a method or scheme for pricing the acquisition and / or supply of precursors to construct a device is provided. In at least one embodiment, the precursors are acquired from a supplier. In at least one embodiment, the precursors are supplied to a manufacturing process to construct a ferroelectric or paraelectric device (or any device having nonlinear polar materials). In at least one embodiment, a notification is updated to indicate the acquisition and supply of a quantity of precursors. In at least one embodiment, the notification is electronically transmitted to a customer, wherein the notification includes a line item (e.g., a second line item) related to the cost of the quantity of precursors and the supply of the precursors. In at least one embodiment, a method or scheme for pricing a number of turns associated with a manufacturing process is described. In at least one embodiment, several batches of turns associated with the manufacturing process are identified. In at least one embodiment, a base cost is determined for each batch of turns. In at least one embodiment, a total cost is calculated as the sum of the base costs for each batch of turns. In at least one embodiment, a notification is updated that displays the number of batches of turns and the total cost. In at least one embodiment, the notification is electronically transmitted to a customer. In at least one embodiment, the notification includes a list having a line item (e.g., a third line item) associated with the number of batches of turns and the total cost. In at least one embodiment, a method or scheme for pricing material acquisition (in bulk or in separate batches) and / or material application to construct a device is described. In at least one embodiment, a bulk amount of material is purchased. In at least one embodiment, the material is applied to a manufacturing process to construct a ferroelectric device. In at least one embodiment, a notification indicating material acquisition and material application is updated. In at least one embodiment, the notification is electronically transmitted to a customer. In at least one embodiment, the notification includes a bill with a line item (e.g., a fourth line item) related to material acquisition costs and material application. In at least one embodiment, a method or scheme for pricing the manufacture of a memory device by coupling one or more transistors to the device is described. In at least one embodiment, the memory device is manufactured by coupling one or more transistors to a ferroelectric device. In at least one embodiment, a notification indicating the manufacture of the memory device is updated. In at least one embodiment, the notification is electronically transmitted to a customer. In at least one embodiment, the notification includes a bill having a line item (e.g., line item 5) related to the manufacture of the memory device. In at least one embodiment, a method or scheme for pricing the acquisition of a transistor wafer and / or the fabrication of a memory device on the transistor wafer is described. In at least one embodiment, a transistor wafer is provided. In at least one embodiment, a memory device is fabricated on the transistor wafer, wherein the memory device comprises a ferroelectric or paraelectric device. In at least one embodiment, a notification indicating the acquisition of the transistor wafer and the fabrication of the memory device is updated. In at least one embodiment, the notification is electronically transmitted to a customer, wherein the notification includes a bill having a line item (e.g., a sixth line item) related to the cost of acquiring the transistor wafer and fabricating the memory device. In at least one embodiment, a method or scheme for pricing the measurement of electrical and / or chemical properties of a memory device is provided. In at least one embodiment, the electrical and / or chemical properties of a memory device and / or a ferroelectric device or a paraelectric device are measured. In at least one embodiment, a notification displaying the measurement of the electrical and / or chemical properties is updated. In at least one embodiment, the notification is transmitted to the customer electronically. In at least one embodiment, the notification includes a list with a line item (e.g., the seventh line item) related to the measurement of the electrical and / or chemical properties. In at least one embodiment, the electrical and / or chemical properties of a target material are modeled to generate a representative model of the target material. In at least one embodiment, the model can be expressed as a series of functions that fit a characteristic diagram of the target material. In at least one embodiment, a notification displaying the representative model is generated. In at least one embodiment, the notification is transmitted to the customer electronically, wherein the notification includes a list with a line item related to the cost of modeling the electrical and / or chemical properties. In at least one embodiment, a method or scheme for pricing multi-project wafer acquisition and / or material integration on a multi-project wafer is provided. In at least one embodiment, a multi-project wafer is acquired. In at least one embodiment, materials are integrated on a multi-project wafer. In at least one embodiment, a notification displaying the multi-project wafer acquisition and material integration is updated. In at least one embodiment, the notification is transmitted electronically to a customer. In at least one embodiment, the notification includes a bill having a line item (e.g., an eighth line item) related to the cost of multi-project wafer acquisition and material integration. In at least one embodiment, an iterative method for multi-layer stack development for device applications is provided. In at least one embodiment, the iterative method is priced during at least one iteration and / or after all iterations are completed. Specific details, such as structural schemes and detailed manufacturing methods, are set forth herein to provide a thorough understanding of at least one embodiment. Those skilled in the art will readily appreciate that at least one embodiment can be practiced without these specific details. In other instances, well-known features, such as process equipment and device operation, are described in less detail to avoid unnecessarily obscuring at least one embodiment. Furthermore, it should be understood that at least one embodiment shown in the figures is illustrative and not necessarily drawn to scale. picture 1 shows a flow chart of method 100 for iteratively developing a multilayer stack applied to a memory device and evaluating the iterative approach, according to at least one embodiment. Capacitors comprising a variety of materials can be implemented for memory applications (e.g., RAM applications). In at least one embodiment, nonlinear polar materials offer a wide range of technologically important properties, including ferroelectricity, piezoelectricity, metal-like conductivity, semiconductors, and thermoelectricity. Perovskites are an example of nonlinear polar materials (e.g., materials with the chemical formula ABO3). In at least one embodiment, perovskite materials are implemented in capacitors due to their low power consumption and high on / off ratio, such as for high-density FeRAM applications. In at least one embodiment, perovskite FeRAM devices (herein, FeRAM devices) may offer manufacturing advantages over other forms of memory, such as magnetic tunnel junction (MTJ) memory devices. In at least one embodiment, an MTJ may include a stack of 10 or more layers. In at least one embodiment, a perovskite-based FeRAM device may include three layers for functionality. In at least one embodiment, a ferroelectric dielectric is included between two electrode layers, regardless of device geometry. In at least one embodiment, the electrode layers may also include perovskite materials to achieve lattice matching and reduce resistance. In at least one embodiment, the inclusion of lead-free perovskite materials provides additional environmental benefits without sacrificing device performance. Integrating nonlinear polar materials into silicon semiconductor wafer fabrication processes can be challenging. From fabricating multilayer stacks to patterning the devices and integrating one or more devices with one or more transistors, the experimental iterations can be technically challenging and time-consuming. The challenges in experimental iterations of thin film development begin with material selection and design. In at least one embodiment, films with thicknesses less than 100 nm are possible. While individual layers can be deposited in controlled amounts and the film stoichiometry can be adjusted using careful experimentation, depositing multiple layers in a multilayer stack is more challenging. In at least one embodiment, depositing each layer in a multilayer stack involves forming layers with the correct stoichiometry, crystallinity, crystal structure template, thickness, and surface roughness for device functionality. In at least one embodiment, the layers deposited in the multilayer stack are expected to have the same necessary chemical and electrical properties as a single layer, but also be compatible with each other to produce a functional memory device. In at least one embodiment, lattice matching between layers, maintaining the surface roughness of a layer so that it does not affect the roughness of the upper layer, and avoiding interdiffusion of elements during deposition present some challenges. In at least one embodiment, the conductive layer implemented as an electrode is expected to have the correct work function, and the dielectric layer is expected to have appropriate polarization and polarization charge density (above 0.1 microcoulomb / cm 2In at least one embodiment, the multilayer stack will provide the ability to operate at sufficiently low operating voltages (e.g., below 2V), and the device formed from the multilayer stack is expected to have an endurance of at least e15 to be commercially viable. In at least one embodiment, obtaining a multilayer stack with the necessary layer properties begins with a targeted deposition process for each layer. In at least one embodiment, the deposition process can be based on physical vapor deposition (PVD) or atomic layer deposition (ALD). In at least one embodiment, PVD deposition uses an appropriate target for sputtering, while ALD uses an appropriate precursor for nucleation. In at least one embodiment, for PVD deposition, the target can be an alloy or compound of elements. In at least one embodiment, the correct charge / mass or magnetic moment ratios of the elements in the target, along with mass and other variables, are modeled, and the correct deposition conditions (e.g., power, pressure, temperature, etc.) are evaluated for forming layers with the appropriate stoichiometry. In at least one embodiment, the modeling can achieve substantially accurate predictions of sputtering yield, a useful parameter in PVD deposition. In at least one embodiment, the iterative nature of the experiments is sequentially and judiciously based on the results of one or more previous experiments. In at least one embodiment, when a multilayer stack is patterned to form a device, chemical and mechanical properties may change during the manufacturing process. In at least one embodiment, voids may introduce additional oxygen and / or hydrogen (and other contaminants), causing chemical reactions at the interface and the formation of undesirable residual layers. These residual layers may cause increased circuit resistance. In addition, interdiffusion of elements in the residual layer may adversely affect parameters such as residual polarization. In at least one embodiment, thermal annealing can alleviate potential grain size and defect issues and device patterning related issues. In at least one embodiment, thermal annealing can provide hydrogen termination of dangling bonds. In at least one embodiment, thermal annealing after stack deposition and / or after device fabrication can be performed with careful consideration of thermal budget. In at least one embodiment, integrating one or more devices with a transistor involves experiments to design a multilayer stack to address asymmetry in the operating voltage characteristics of a 1T-1C (one transistor, one capacitor) bit cell. In at least one embodiment, the experiments involve addressing integration issues associated with manufacturing memory devices on the same substrate as the transistors but after the transistors are fabricated. In at least one embodiment, the experiments involve determining the appropriate device layout and density requirements to form a useful memory chip. In at least one embodiment, the dimensions of the memory devices and transistors can be matched to achieve optimal integrated memory performance. In at least one embodiment, high operating capacitor voltages may require transistors that can provide high currents or operate at sufficiently high voltages. In at least one embodiment, where the manufacturing sequence involves fabricating the transistors prior to deposition of the multilayer stack, the heat buildup required to perform annealing is an important factor in material selection. In at least one embodiment, experiments focusing on total heat flux are used in integrated 1T-1C device fabrication. In at least one embodiment, the method 100 begins at operation 110 by determining a target multilayer stack, wherein the initial material layer stack comprises a material of the formula AA′BB′O 3. In at least one embodiment, the initial material layer stack comprises a formula AA'BB'O 3N x F Y In at least one embodiment, method 100 continues at operation 120 by performing model-driven target selection based on charge:mass ratio and magnetic moment:mass ratio, as well as other variables that can accurately predict sputtering yield. In at least one embodiment, method 100 continues at operation 130 by obtaining one or more initial targets, wherein each of the one or more initial targets comprises a single element or a combination of elements having respective initial stoichiometric compositions. In at least one embodiment, the targets are obtained by communicating with an external parts supplier to request a target comprising an alloy having certain stoichiometric properties, as set forth in operation 132. In at least one embodiment, if the targets are not readily available, the manufacturing lead time of a third party can be utilized. In at least one embodiment, method 100 continues with operation 140 where a multilayer stack is deposited using the initial one or more targets to form an initial multilayer stack. In at least one embodiment, method 100 continues with operation 150 where chemical composition and electrical properties of the initial multilayer stack are measured. In at least one embodiment, method 100 continues with operation 160 where the measured chemical composition and electrical properties of the initial multilayer stack are matched to a target result and a determination is made as to whether the measured values ​​are within a tolerance level of the target result. In at least one embodiment, if the measured results are within a tolerance level of the target result (e.g., within 5%), method 100 ends at operation 170. In at least one embodiment, method 100 continues with operation 180 where a modification is performed in response to determining that the measured values ​​are not within the tolerance level. In at least one embodiment, the modification includes changing the composition of one or more layers in the initial multilayer stack by implementing a model-driven selection, modifying a single element or combination of elements in the successive one or more targets to include a corresponding second stoichiometric composition, and obtaining the successive one or more targets to form a successive multilayer stack. In at least one embodiment, a notification is sent to the customer of method 100 after modifying the composition of one or more targets. In at least one embodiment, the notification may indicate that one or more targets were acquired, layers were deposited on the one or more targets to form a stack, and then the stack was measured. In at least one embodiment, the notification may be electronically transmitted at operation 190 to price the work listed on the notification. In at least one embodiment, the notification may include a bill with a line item related to the cost of acquiring the target material and the application of the target material. Here, "bill" may generally refer to one of the following: a bill of sale, an estimated cost, a royalty, an equity share, or a cost-plus estimate. In at least one embodiment, method 100 iterates by performing model-driven selection, modifying the stoichiometric composition of one or more targets in a succession of one or more targets, obtaining a succession of one or more targets, depositing a succession of multilayer stacks, performing compositional and electrical property measurements, matching the measured values ​​to target values, and / or determining whether the measured results are within a tolerance of the target values ​​until a target result is obtained. Although picture 1 is an iterative method for fabricating a multi-layer stack, but in at least one embodiment, one or more operations (eg, operations 110 - 180 ) may be further decomposed into sub-operations, as discussed below. In at least one embodiment, beginning with operation 110, a desired composition of a target multilayer stack is selected including a material selection for at least one pair of electrodes for a capacitor and a dielectric material including ferroelectric, paraelectric, or antiferroelectric properties. In at least one embodiment, dashed box 100A defines operations performed by a first entity, while target material fabrication (here, operation 132) may be performed by a second entity (e.g., an external supplier), where the second entity is different from the first entity. In at least one embodiment, once the target results described with reference to operation 170 are achieved, method 100 may then perform a pricing operation 195. In at least one embodiment, pricing operation 195 is similar to pricing operation 190. picture 2A shows a representative three-layer stack 200 according to at least one embodiment. In at least one embodiment, stack 200 includes a conductive layer 202, a dielectric 204 including a polar material, and a conductive layer 206 on dielectric 204. In at least one embodiment, conductive layer 202 is located on a substrate 208. In at least one embodiment, substrate 208 includes silicon, silicon-germanium, or germanium. In at least one embodiment, conductive layer 202 is deposited on substrate 208. In at least one embodiment, conductive layer 202 and conductive layer 206 comprise a conductive oxide. In at least one embodiment, the conductive oxide comprises one of the non-Pb perovskite metal oxides, such as, but not limited to, (La, Sr)FeO 3. (La, Sr) CoO 3. (La,Ca)MnO 3. (La, Sr)MnO 3. SrRuO 3. Sr 2RuO 4. (Ba,Sr)RuO 3. SrMoO 3. (La, Sr)MnO 3. SrCoO 3. SrCrO 3. SrFeO 3. SrVO 3. CaMoO 3. SrNbO 3. LaNiO 3. YBa 2Cu 3O 7. Bi 2Sr 2CaCuO 8. CaRuO 3. Ir 2O x 、Ru、RuO x 、Mo、MoO x or WO x In at least one embodiment, the conductive layer 202 and the conductive layer 206 include a metal, such as but not limited to Ir, Ru, or W. In at least one embodiment, dielectric 204 comprises a polar layer comprising a base polar material substitutionally doped with a dopant. In at least one embodiment, dielectric 204 comprises a crystalline polar layer. In at least one embodiment, the base polar material may comprise one or more metal elements and one or both of oxygen and nitrogen. In at least one embodiment, the dopant may comprise a metal element from the 4d series, 5d series, 6d series, 4f series, or 5f series. In at least one embodiment, the dielectric 204 is a ferroelectric dielectric layer comprising a structure of the formula ABO 3, wherein A and B are two cations of different sizes and O is oxygen. In at least one embodiment, A is generally larger than B. In at least one embodiment, the non-Pb perovskite may also be doped, such as with La or a lanthanide element. In at least one embodiment, the non-Pb perovskite material may include one or more of La, Sr, Co, Cr, K, Nb, Na, Sr, Ru, Y, Fe, Ba, Hf, Zr, Cu, Ta, Bi, Ca, Ti, or Ni. In at least one embodiment, the dielectric 204 includes bismuth ferrite (BFO) with a dopant material, wherein the dopant material is lanthanum, an element from the lanthanide series of the periodic table, or one of the elements of the 3d, 4d, 5d, 6d, 4f, or 5f series of the periodic table. In at least one embodiment, dielectric 204 includes a low voltage ferroelectric (FE) material sandwiched between conductive layer 206 and conductive layer 202. In at least one embodiment, such low voltage FE materials may have the formula AA'BB'O 3, where A' is a dopant for atomic site A and may be an element from the lanthanide series, and where B' is a dopant for atomic site B and may be an element from the transition metal series (e.g., Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, or Zn). In at least one embodiment, A' may have the same valence as site A, but a different ferroelectric polarizability. In at least one embodiment, a voltage below 2 volts is sufficiently low to be characterized as a low voltage. In at least one embodiment, the dielectric 204 has the formula AA'BB'. 3. In at least one embodiment, the dielectric 204 includes a paraelectric material including SrTiO 3. Ba (x) Sr (y) TiO 3. HfZrO 2. Hf-Si-O, La-substituted PbTiO 3. or relaxor ferroelectric based on PMN-PT. In at least one embodiment, for Ba (x) Sr (y) TiO 3, x is -0.05, y is 0.95. In at least one embodiment, the dielectric 204 comprises an antiferroelectric material. In at least one embodiment, the antiferroelectric material may comprise one of the following: PZT with Zr doping > 30% or Sn doping > 25%, La doped PZT with Zr doping > 30% and / or Sn doping > 20%, HfSiO 2 and HfZrO with Si>30% and Zr doping>30% x 、ZrO 2. NaNbO3, or >5% K-doped NaNbO 3. In at least one embodiment, the choice of material depends on various factors. In at least one embodiment, the factors include electrical properties, device fabrication, and integration with transistors. In at least one embodiment, the conductive layer 202 may be deposited to a thickness T between 3 nm and 30 nm (inclusive). l In at least one embodiment, the conductive layer 206 may be deposited to a thickness T between 3 nm and 30 nm (inclusive). 3. In at least one embodiment, the dielectric 204 may be deposited to a thickness T between 1 nm and 30 nm (inclusive). 2. picture 2B schematically illustrates a method according to at least one embodiment picture 2A. In at least one embodiment, the crystalline polar layer has a perovskite structure 204A. In at least one embodiment, the perovskite structure 204A represents a crystalline oxide in a paraelectric state, which may have the chemical formula ABO 3, where each of A and B represents one or more metal cations, and O represents an oxygen anion. In at least one embodiment, the crystalline polar layer may have more than one element represented by A (e.g., A1, A2, ..., AN) and / or more than one element represented by B (e.g., B1, B2, ..., BN), and may be doped with one or more dopants represented by A' (e.g., A'1, A'2, ..., A'N) and / or one or more dopants represented by B' (e.g., B'1, B'2, ..., B'N), as described above. In at least one embodiment, the A-site cations occupy corner positions, while the B-site cations are located at the center of the bulk of the perovskite structure 204A. In at least one embodiment, three oxygen atoms per unit cell reside on a face of the perovskite structure 204A. In at least one embodiment, many perovskite structures have a lattice constant approaching, but not limited to, approximately 4 angstroms (Å) due to the rigidity of the oxygen octahedral network and the well-defined oxygen ion radius of 1.35 Å. In at least one embodiment, a variety of different cations can be substituted as dopants at both the A and B sites to achieve the many advantageous properties described herein while maintaining the overall crystal structure. In at least one embodiment, dopant atoms can occupy either the A or B sites to form a substitutional dopant solid solution. In at least one embodiment, a dopant occupying the A site can have a very different effect on the base polar material than a dopant occupying the B site. In at least one embodiment, for a product containing barium titanate (BaTiO 3) polar layer, which may be a paraelectric material having a cubic perovskite structure, wherein the A site is occupied by Ba atoms, and Ti atoms occupy the B site and are surrounded by an octahedron of O atoms, with the O atoms located at the center of each face of the unit cell. In at least one embodiment, for BaTiO 3. In the paraelectric phase, the perovskite structure 204A may be a cubic or tetragonal system above the Curie temperature (e.g., above 130 degrees Celsius). In at least one embodiment, in the paraelectric phase, O atoms may occupy intermediate positions relative to each pair of O atoms on opposite faces of the unit cell. In at least one embodiment, below the Curie temperature, in the ferroelectric phase, the perovskite structure 204A may have a tetragonal structure, wherein the B sublattice (e.g., BaTiO 3) and O atoms can be displaced in opposite directions relative to the Ba atoms, which serves as a reference. In at least one embodiment, these atomic displacements may be accompanied by a slight relaxation of the unit cell, which becomes tetragonal (when the paraelectric phase is cubic) or further elongated tetragonal (when the paraelectric phase is tetragonal) and produces a stable polarization (e.g., about 26 μC / cm 2In at least one embodiment, in the tetragonal phase, cubic symmetry is broken, resulting in six symmetry-equivalent variants with polarizations along the

[100] ,

[010] , and

[001] directions. picture 3A shows a flow chart illustrating a method 300A for performing a multilayer stack deposition iteration using one or more targets 302 in a tool 304 according to at least one embodiment. In at least one embodiment, the tool 304 is a deposition tool. In at least one embodiment, the tool 304 is a physical vapor deposition tool. In at least one embodiment, the one or more targets 302 include individual targets T i In at least one embodiment, T i Including element E i or alloy i , where the subscript "i" corresponds to the number of targets 302, such as 1, 2, 3, 4, etc. In at least one embodiment, the individual targets T i The number of targets depends on the material to be deposited, for example, N refers to the last target. In at least one embodiment, the individual targets T i The amount of may depend on the amount of elements present in the deposition material. In at least one embodiment, when the individual target T i For alloys or compounds (A i ), A i Can be formula F x G y A binary alloy or compound of formula F x G y H z A ternary alloy or compound of , wherein F and G may be metals and H may be a non-metal (such as O). In at least one embodiment, for example, BiFeO 3 polar material, the number of elements is 3. In at least one embodiment, Bi and Fe can be provided as >99% pure elemental sputtering targets. In at least one embodiment, Bi and Fe can be provided as >99% pure elemental sputtering targets. In at least one embodiment, oxygen can be introduced into the sputtering environment as a gas or as part of a binary compound with iron. In at least one embodiment, for sputtering BiFeO 3. The total number of targets may be 1 or 2 (eg, N may range from 1 to 2). In at least one embodiment, a sputtering target comprising a multi-element compound can be manufactured by arc melting or radio frequency melting of a metal mixture in a vacuum or gas atmosphere. In at least one embodiment, the gas can be inert or include O, N, H, or F. In at least one embodiment, a sputtering target comprising a multi-element compound can be manufactured by mixing the constituent binary oxides in a stoichiometric ratio, followed by hot isostatic pressing (HIP). In at least one embodiment, a sputtering target comprising a multi-element compound can be manufactured by mixing the constituent binary oxides in a stoichiometric ratio, then cold-pressing the powder mixture into a ceramic compact using a pneumatic press, and then sintering the ceramic compact at a high temperature to achieve the desired target chemical composition and density. In at least one embodiment, the density of the target material is between 85% and 95% of the theoretical material density. In at least one embodiment, a model 306 can be implemented that uses information about the charge:mass ratio and magnetic moment:mass ratio of ions (e.g., elements or ionized alloys) to estimate the sputtering coefficient and rate within the PVD tool. In at least one embodiment, the charge:mass ratio and magnetic moment:mass ratio are used to accurately predict the sputtering yield, deposition rate and composition of the deposited layer in a deposition system that utilizes a magnetic field. In at least one embodiment, the computational model further uses the operating parameters of the tool 304 to calculate the deposition rate on the substrate. In at least one embodiment, the operating parameters may include radio frequency (RF) magnetron deposition power, chamber operating pressure, sputtering time, chamber and / or substrate temperature, and the type and concentration of gas flowing during deposition. In at least one embodiment, the gas used for deposition may be an inert gas, such as Ar and / or include other gases, such as O 2. N 2. H 2. Kr and Ne. In at least one embodiment, the deposition process for forming the stack 200 may include depositing layers without voids. In at least one embodiment, voids may be avoided to prevent the formation of an interface layer between the electrode layer and the dielectric layer. In at least one embodiment, the interface layer may provide an additional source of oxygen during cycling of a device made from the stack 200. In at least one embodiment, the additional source of oxygen may be uncontrollable and may cause instability or loss of tolerance during cycling of the device. In at least one embodiment, for target A i The deposition process may form the dielectric 204 in the stack 200. In at least one embodiment, the stack 200 has a combination of picture 2A. In at least one embodiment, the characteristics of the stack 200 can be determined using a series of measurements summarized in Table 1. In at least one embodiment, the dielectric 204 may not have the desired characteristics of the target dielectric layer, such as the correct stoichiometry, thickness, uniformity, etc. In at least one embodiment, the same target 302 can be utilized to deposit a new stack 200'. In at least one embodiment, a price can be invoiced and sent to a customer when the same target 302 is used to deposit a new stack 200'. In at least one embodiment, tool deposition conditions can be changed based on the inputs of the model 306. In at least one embodiment, a price can be invoiced and sent to a customer when deposition conditions are changed based on the inputs of the model 306. In at least one embodiment, a new set of operating parameters, power, chamber operating pressure, sputtering time, temperature, and gas can be implemented to achieve the stack 200'. In at least one such embodiment, the stack 200', including the dielectric 204', can have the desired properties of the target dielectric layer, such as the correct stoichiometry, thickness, uniformity, etc. In at least one embodiment, the process of changing PVD tool parameters can be iteratively changed based on input from measurements and model 306 until stack 200' reaches target values ​​within tolerance of the desired result. In at least one embodiment, a bill can be generated for the iterative changes and the customer can be charged for the service of the iterative changes. In at least one embodiment, the power range can be between 5 watts and 75 watts per square inch, the chamber operating pressure range can be between 0.5 millitorr and 30 millitorr, and the chamber and / or substrate temperature range can be between room temperature and 650 degrees Celsius. In at least one embodiment, it can be inferred that due to picture In the method of 3A, if one or more individual targets T are changed i , then the target result can be substantially within the reach. In at least one embodiment, this method is shown in picture In at least one embodiment, after initial experimentation and obtaining the stack 200, a new one or more targets 308 can be implemented according to method 300B. In at least one embodiment, the target 308 includes one or more individual targets T i ', which includes one or more new compounds A i '{(F x G y ) i '、 (F x G y H z ) i In at least one embodiment, the individual stoichiometric amounts of the compound comprising Bi, Fe, and O may differ by 5% from the compound comprising Bi, Fe, and O in the first one or more targets. In at least one embodiment, the individual stoichiometric amounts of the compound comprising Bi, Fe, and O may differ by 10% from the compound comprising Bi, Fe, and O in the first one or more targets. In at least one embodiment, the elemental target E i The purity may be the same as before, or the purity may be changed. In at least one embodiment, in some examples, the new purity may be in the range of 99% to 99.5%. In at least one embodiment, the new target T i ' Execute model 306 to calculate tool parameters. In at least one embodiment, the customer may be charged for executing model 306 and an invoice may be sent. In at least one embodiment, the tool parameters may not be different from the tool parameters used to manufacture stack 200. In at least one embodiment, one or more properties of dielectric 204 may be changed with the modification iteration of one or more target materials. In at least one embodiment, after the properties of dielectric 204 are changed, the customer may be charged and an invoice may be sent. In at least one embodiment, due to the target material T i ', the dielectric layer 204" in the stack 200" may have useful properties, such as stoichiometry, thickness, uniformity, etc. In at least one embodiment, the stack 200' including dielectrics 204' and 204" respectively may have the desired properties of the target dielectric layer, which substantially match and are within tolerance of the target result. In at least one embodiment, although the emphasis on BiFeO 3 dielectric 204, but the methods 300A and 300B can be generalized to be applicable to various material choices of the dielectric 204 described above. In at least one embodiment, BiFeO 3 may also be doped with other materials, such as metal elements from the 3d, 4d, 5d, 6d, 4f or 5f series of the periodic table. While experiments emphasizing dielectric 204 have been described, method 300A or method 300B can be used, according to at least one embodiment, to iteratively tune the chemical and electrical properties of conductive layers 202 and 206, such as resistivity, work function, crystallinity, and the like. In at least one embodiment, a customer can be charged and invoiced for the interactive tuning of the chemical and electrical properties of conductive layers 202 and 206. In at least one embodiment, the properties of conductive layers 202 and 206 can be adjusted individually or collectively (as part of stack 200). refer to picture 3A and 3B, in at least one embodiment, when performing an in-situ deposition process to form the stack 200, 200' or 200", the target T i or T i ' may include materials used to deposit all layers in the stack 200, 200', or 200". In at least one embodiment, minimizing iterations is useful for accelerating development and reducing costs. In at least one embodiment, the customer may be charged and an invoice may be sent after the deposition process forming the stack 200, 200', or 200" is completed. In at least one embodiment, the evaluation of the chemical, mechanical, and electrical properties of the stack 200, 200', or 200" can be performed using a variety of measurement techniques. In at least one embodiment, the customer can be charged and an invoice can be sent after the measurement techniques are applied. In at least one embodiment, it is useful to perform ferroelectric hysteresis measurements (PE curves) to analyze the effectiveness of a particular ferroelectric dielectric layer. In at least one embodiment, a simple measurement technique involves applying an electric field across the sample. In at least one embodiment, the field is attenuated using a resistive voltage divider. In at least one embodiment, the measured current through the circuit is integrated into a charge using a capacitor placed in series with the sample. In at least one embodiment, the applied voltage and measured voltage drop (current measurement) signals are used to generate a polarization versus electric field curve using an oscilloscope. In at least one embodiment, a notification is sent to the customer after the chemical, mechanical, and electrical properties of the stack are evaluated. In at least one embodiment, the notification may indicate that one or more targets 302 or 308 were obtained and the chemical, mechanical, and electrical properties of the stack were evaluated. In at least one embodiment, the notification may be electronically sent to the customer to provide a price for the work listed on the notification. In at least one embodiment, the notification may include a line item related to the cost of obtaining the one or more targets 302 or 308 and the evaluation of the chemical, mechanical, and electrical properties of the stack. picture FIG4 shows a polarization versus electric field graph (PE curve) 400 of a representative multilayer stack (e.g., stack 200) including ferroelectric material according to at least one embodiment. In at least one embodiment, dielectric 204 includes a storage layer, such as a ferroelectric layer or a paraelectric layer. Referring again to FIG4 , FIG4 shows a polarization versus electric field graph (PE curve) 400 of a representative multilayer stack (e.g., stack 200) including ferroelectric material according to at least one embodiment. picture 4. In at least one embodiment, PE curve 400 may represent a ferroelectric layer comprising a polydomain ferroelectric material. In at least one embodiment, before the first poling, there may initially be a statistical distribution of ferroelectric domains such that the net polarization at zero field is approximately zero. In at least one embodiment, the initial polarization (P) may be represented by PE curve portion 422. In at least one embodiment, when the ferroelectric layer is first polarized by applying a positive electric field, starting from a polarization P = 0, the polarization increases with increasing electric field until it reaches zero at +P. max In at least one embodiment, at +P max After reaching saturation at E=0, when the electric field is subsequently reduced according to the PE curve portion 424, the polarization may remain at E=0. In at least one embodiment, the remaining polarization is referred to herein as remnant polarization (+P r In at least one embodiment, a negative electric field may be applied to reduce the polarization back to zero. In at least one embodiment, a sufficient electric field to reduce the polarization back to zero is referred to herein as a coercive field (E c In at least one embodiment, according to the PE curve portion 424, a negative coercive field (-E c ) to reduce the polarization from +Pr to zero. In at least one embodiment, if the magnitude of the negative voltage or field is further increased, the hysteresis loop may behave similarly to that under positive voltage or magnetic field, but in an inverse manner. In at least one embodiment, the magnitude of negative P increases as the negative electric field increases until it is at -P max In at least one embodiment, when the magnitude of the electric field is subsequently reduced along the PE curve portion 426, at E=0, the remnant polarization -P r In at least one embodiment, the ferroelectric layer exhibits a remnant polarization +P r or -P rcharacteristic, which can be reversed by applying an electric field in the opposite direction. In at least one embodiment, this causes a hysteretic PE curve in the ferroelectric memory device. In at least one embodiment, by using thin film technology, the operating field or voltage can be reduced to a level below that of standard chip data in a non-volatile state, allowing data to be rewritten quickly and frequently. In at least one embodiment, the ferroelectric memory device has the advantageous features of both volatile and non-volatile memory technologies. In at least one embodiment, voltage pulses are used to write and read digital information. In at least one embodiment, if an electric field pulse is applied in the same direction as the remnant polarization, no switching occurs. In at least one embodiment, due to the dielectric response of the ferroelectric material, there may be a voltage between P and V. max With P r The polarization change ΔP NS In at least one embodiment, switching may occur if an electric field pulse is applied in a direction opposite to the remnant polarization. In at least one embodiment, if the initial polarization is in a direction opposite to the applied electric field, the polarization of the ferroelectric layer is reversed, resulting in an increased switching polarization change ΔP s . In at least one embodiment, the PE curve 400 can be measured in a blanket stack. In at least one embodiment, the other measurements described in Table 1 below can also be combined with picture 1 and 3A-3B during the iterative development method described. In at least one embodiment, the measurements provide a multi-layer stack (e.g., stacks 200, 200', and 200") (see picture 1. 3A-3B) and the mechanical and / or chemical composition and electrical properties of one or more layers. According to at least one embodiment, the measurement techniques and related measurements are listed in Table 1. In at least one embodiment, for each measurement, an invoice can be generated and charged to the customer for the service of performing the measurement. [Table 1] In at least one embodiment, measurement techniques such as transmission electron microscopy can be used to obtain high-resolution images of layers, interfaces between layers, atomic arrangements, atomic planes, and dislocations. In at least one embodiment, X-ray diffraction can be used to measure the crystal phase identification of crystalline materials in electrodes and ferrodielectric layers. In at least one embodiment, the positive-up and negative-down methods can be used to measure the relationship between switchable polarization and electric field in a multilayer stack. In at least one embodiment, atomic force microscopy (AFM) can be used to measure the surface roughness and microstructure of the top layer in the stack. In at least one embodiment, conductive AFM can be used to measure the current-voltage characteristics of the multilayer stack. In at least one embodiment, piezoelectric microscopy can be used to measure the ferroelectricity of the ferrodielectric layer. In at least one embodiment, Kelvin probe force microscopy can be used to measure the electrode work function of electrodes in the multilayer stack. In at least one embodiment, an invoice can be generated for the measurement service and charged to the customer. In at least one embodiment, at least some of the above-described measurements can be performed after device fabrication. In at least one embodiment, surface roughness, particularly the surface roughness of the underlying conductive layer, can be measured after a single layer is deposited. In at least one embodiment, the amount payable for the measurement depends on the complexity of the measurement. In at least one embodiment, more complex measurements are charged more than less complex measurements. picture 5 is a flow chart illustrating a method 500 for iteratively developing a multilayer stack for a memory device and evaluating the iterative method according to at least one embodiment, wherein the method 500 further includes annealing the multilayer stack. In at least one embodiment, the method 500 includes the method 100 ( picture 1) by adding an annealing operation 510 between the multilayer stack formation of operation 140 and the measurement of material composition and performing material composition and electrical test characteristic measurements of operation 150. In at least one embodiment, achieving a grain size that is beneficial for increasing the effective polarization in the dielectric layer is useful for high performance memory devices. In at least one embodiment, the modulation of the grain size can be accomplished by performing an annealing process at a high temperature. In at least one embodiment, the annealing process includes a rapid thermal processing process (herein, PD-RTA). In at least one embodiment, PD-RTA can utilize a temperature greater than or equal to 400 degrees Celsius. In at least one embodiment, a blanket unpatterned stack can be heated to a high temperature, such as a temperature greater than 800 degrees Celsius, to determine the optimal properties of a particular multilayer stack. In at least one embodiment, the annealing duration can be 10-30 minutes to test the limits of the multilayer stack. In at least one embodiment, the annealing temperature can be above 800 degrees Celsius. For patterned memory devices, the duration of most processes may be limited to approximately one minute or less, for example, when such memory devices are integrated with transistors. In at least one embodiment, the high-temperature, but short-duration processes are compatible with transistors embedded in a substrate on which a perovskite material is formed. In at least one embodiment, these methods are particularly advantageous when transistors are fabricated using a gate-last process to prevent threshold voltage shifts caused by high-temperature operation for substantially longer than one minute. In at least one embodiment, a post-deposition anneal (PDA) can be characterized as a thermal annealing of a layer or stack after a deposition process has been performed. In at least one embodiment, this is in contrast to an in-situ annealing performed during deposition. In at least one embodiment, a PDA can be performed, for example, after all layers in a multilayer stack have been deposited. In at least one embodiment, an annealing process can be performed after a patterning process for manufacturing a memory device. In at least one embodiment, an annealing process can be performed after depositing a first conductive layer and a dielectric layer and before depositing a second conductive layer on the dielectric layer. In at least one embodiment, a PDA is performed after depositing the multilayer stack. In at least one embodiment, an annealing operation 510 is inserted before performing measurements of the multilayer stack, which measurements can be compared to measurements obtained from an identical, unannealed multilayer stack. In at least one embodiment, a customer can be charged and an invoice can be sent for the PDA process. In at least one embodiment, the annealing temperature can be as high as 1300 degrees Celsius, with the annealing duration being limited to less than or equal to 60 seconds. In at least one embodiment, the specific temperature and duration depend on the annealing technique utilized and the maximum thermal footprint compatible with the transistor, such as for integrated device applications. In at least one embodiment, for temperatures below 700 degrees Celsius, the duration, such as 60 seconds or less, can be relatively short. In at least one embodiment, post-deposition rapid thermal annealing (PTTA) may be used to describe all thermal annealing processes that heat and cool the wafer at rates faster than those typically used in furnace annealing tools. In at least one embodiment, the heating and / or cooling rates may be greater than 10 degrees Celsius per second. In at least one embodiment, such rapid heating and cooling can be achieved using a variety of techniques. Herein, the terms "RTP" or "RTA" may generally describe rapid thermal annealing techniques in which infrared lamps may be used to heat the wafer. In at least one embodiment, xenon lamp-based heating (also known as "flash" annealing), laser heating (laser annealing), and microwave energy (microwave annealing) may be used to heat the wafer. In at least one embodiment, the surface temperature of the substrate may be monitored using pyrometers and thermocouples. In at least one embodiment, these techniques can provide extremely fast heating and cooling rates, such as 1 million degrees per second. In at least one embodiment, it is useful to control the cooling process to prevent misalignment in the layers. In at least one embodiment, the post-deposition annealing may include one or more of the above-described techniques. In at least one embodiment, RTP / RTA may be performed at temperatures above 1000 degrees Celsius. In at least one embodiment, RTP / RTA may be used for annealing to temperatures below 800 degrees Celsius, as the duration is on the order of at least a few seconds. In at least one embodiment, the customer may be billed and provided with an invoice for the RTP and / or RTA processes. In at least one embodiment, the PDA includes 2. N 2 or RTP process in an argon environment or in air. In at least one embodiment, when 2. N When flowing in argon or argon, the process pressure ranges from 1 Torr to 760 Torr. In at least one embodiment, the RTP process is performed in a vacuum at a pressure less than 1 Torr. In at least one embodiment, the process time ranges from 1 second to 60 seconds. In at least one embodiment, the process temperature ranges from 400 to 700 degrees Celsius, with heating and cooling rates of approximately 40 to 200 degrees Celsius per second. In at least one embodiment, the PDA includes a flash annealing process. In at least one embodiment, flash and laser annealing provide extremely short durations, thereby allowing temperatures exceeding 1000 degrees Celsius without damaging underlying structures, such as transistors on the wafer. In at least one embodiment, flash and laser annealing may include spot heating or beam rastering to increase throughput. In at least one embodiment, when the flash and laser annealing is performed at 0 2. N 2 or argon or air, the process pressure range is 1 torr to 760 torr. In at least one embodiment, the flash annealing process is performed in a vacuum with a pressure less than 1 torr. In at least one embodiment, the process temperature range is 500 to 1300 degrees Celsius, wherein the heating and cooling rates are about 10 6 degrees / second. In at least one embodiment, the processing time is 1 ms or less. In at least one embodiment, the total annealing time can be 10 ms / flash. In at least one embodiment, the total number of flashes per sample (wafer, substrate, etc.) can be up to 100 flashes. In at least one embodiment, the customer can be billed and invoiced for the flash annealing process. In at least one embodiment, the PDA includes a laser annealing process. In at least one embodiment, the process temperature ranges from 600 to 1300 degrees Celsius, with heating and cooling rates of approximately 10 6Celsius / second. In at least one embodiment, the processing time is 100 microseconds or less. In at least one embodiment, the annealing time can be 100 ms per laser annealing process. In at least one embodiment, the total number of laser anneals per sample (wafer, substrate, etc.) can be up to 100. In at least one embodiment, the laser annealing process can be billed to the customer and an invoice can be sent. In at least one embodiment, the multilayer stack may be deposited by a PVD process at 350 degrees Celsius and heated in an RTP tool by a PD-RTA process at a heating and / or cooling rate of 50 degrees Celsius / second at a pressure of 760 Torr and a temperature of 600 degrees Celsius. In at least one embodiment, the multilayer stack may be deposited by a PVD process at 350 degrees Celsius and annealed by a PD-RTA process in a laser annealing tool at 10 6 Annealing is performed at 1200 degrees Celsius for 10 microseconds in a vacuum at a heating and / or cooling rate of degrees Celsius per second. In at least one embodiment, other forms of annealing include microwave annealing or hybrid microwave annealing. In at least one embodiment, microwave annealing or hybrid microwave annealing can be billed to the customer and an invoice can be sent. In at least one embodiment, the microwave annealing process includes heating at a microwave power of less than 1000 W for a fourth duration of less than 3600 seconds. Point defects, such as oxygen vacancies, may lead to increased leakage in the capacitor layer, which may be detrimental to ferroelectric polarization and switching voltage. Oxygen vacancies and other point defects may also lead to ferroelectric domain wall pinning. Pinning may produce detrimental effects, such as increased switching voltage, and lead to premature withstand failure of the ferroelectric capacitor device. In at least one embodiment, dashed box 500A defines operations performed by a first entity, and target fabrication of operation 132 may be performed by a second entity (eg, an external supplier), where the second entity is distinct from the first entity. In at least one embodiment, method 500 iterates by performing model-driven selection, modifying the stoichiometric composition of one or more targets in a succession of one or more targets, obtaining the succession of one or more targets, and depositing a succession of multilayer stacks, performing annealing, performing compositional and electrical property measurements, matching the measured values ​​to target values, and determining whether the measured results are within a tolerance level of the target values ​​until a target result is obtained. In at least one embodiment, after modifying the composition of one or more targets (operation 180), a notification is sent to the customer of method 500. In at least one embodiment, the notification may indicate that one or more targets were acquired, layers were deposited on the one or more targets to form a stack, and then the stack was measured. In at least one embodiment, the notification may be electronically transmitted at operation 190 to invoice the work listed on the notification. In at least one embodiment, the notification may include a bill with a line item related to the cost of acquiring the target material and the application of the target material. In at least one embodiment, in addition to changing the composition of one or more layers in the multilayer stack, additional layers may be added to the multilayer stack at operation 140. In at least one embodiment, these layers may be based on picture 6 is formed by stacking multiple layers 600. In at least one embodiment, once the target result is obtained as described with reference to operation 170, method 500 may perform a valuation operation 195. In at least one embodiment, valuation operation 195 is similar to valuation operation 190. picture 6 is a ferroelectric material according to at least one embodiment (according to picture 5 ). In at least one embodiment, the layers in the multilayer stack 600 are deposited by co-sputtering or reactive sputtering. In at least one embodiment, the application of the co-sputtering or reactive sputtering method can be billed to the customer and an invoice can be sent. In at least one embodiment, additional conductive layers 602 and 604 may be implemented for different purposes. In at least one embodiment, although conductive layer 202 was previously shown as being deposited on substrate 208 for testing purposes, in at least one embodiment, conductive layer 202 may be coupled to an interconnect structure for device manufacturing. In at least one embodiment, coupling conductive layer 202 to an interconnect structure may be billed to the customer and invoiced. In at least one embodiment, conductive layer 202 may also contact one or more insulating layers. In at least one embodiment, coupling conductive layer 202 to one or more insulating layers may be billed to the customer and invoiced. In at least one embodiment, it may be useful for conductive layer 202 to have a crystalline structure that serves as a template for dielectric 204. In at least one embodiment, for this and other reasons, conductive layer 202 may be deposited on a second electrode layer, such as conductive layer 602. In at least one embodiment, coupling conductive layer 202 to conductive layer 602 may be billed to the customer and invoiced. In at least one embodiment, conductive layer 602 comprises Pt. In at least one embodiment, the conductive layer 604 includes TaN. In at least one embodiment, the conductive layers 602 and 604 may be in-situ deposited with non-linear polar materials (e.g., ferroelectric or paraelectric materials) to prevent the formation of an interface layer I between the conductive layer 602 and the conductive layer 202 and between the conductive layer 206 and the conductive layer 604, respectively. 1 and I 2. In at least one embodiment, the customer may be charged and invoiced for coupling the conductive layers 602 and 604 with the non-linear polar material. In at least one embodiment, additional layers may contribute to some structural properties that are detrimental to the overall resistance of the stack. In at least one embodiment, the increase in resistance may require a higher operating voltage. In at least one embodiment, a higher operating voltage may require a more powerful transistor. In at least one embodiment, the choice of material may increase resistance slightly and provide a crystallographic template advantage. In at least one embodiment, determining the minimum thickness necessary to provide a compositional benefit may require balancing with other parameters such as total stack thickness, ease of patterning, and the generation of interfacial layers during the device manufacturing process. Iterative device development may be carefully balanced with the ultimate goal of electrical performance requirements. In at least one embodiment, the customer may be charged and sent an invoice for one or more steps in iterative device development. In at least one embodiment, patterning of multi-layer stacks for fabricating devices introduces further complexities, and the iterative approach described above is used for rapid development. picture 7 is a flow chart illustrating a method 700 for iteratively developing a memory device and pricing the iterative method according to at least one embodiment. In at least one embodiment, the method 700 begins at operation 710 by receiving a message from operation 170 ( picture 5). In at least one embodiment, the method 700 continues with operation 720 for annealing the multilayer stack. In at least one embodiment, the customer may be charged and an invoice may be sent for annealing the multilayer stack. In at least one embodiment, the method 700 continues with operation 730 for etching the multilayer stack to form a memory device. In at least one embodiment, the method 700 continues with operation 740 for forming an encapsulation layer at least around the memory device. In at least one embodiment, the customer may be charged and an invoice may be sent for forming an encapsulation layer at least around the memory device. In at least one embodiment, the method 700 continues with operation 750 for measuring the chemical composition and electrical characteristics of the memory device. In at least one embodiment, the customer may be charged and an invoice may be sent for measuring the chemical composition and electrical characteristics of the memory device. In at least one embodiment, method 700 continues with operation 760 by matching the measured values ​​of the chemical composition and electrical characteristics of the memory device to the target result and determining whether the measured values ​​are within the tolerance level of the target result. In at least one embodiment, if the measured values ​​are within the tolerance level of the target result (as taught by operation 770), the customer may be charged for achieving the target result and an invoice may be sent, as indicated by operation 795. In at least one embodiment, method 700 may continue to operation 780 by performing a modification in response to determining that the measured value is not within the tolerance level. In at least one embodiment, the modification includes changing the composition of one or more layers in the initial multilayer stack by implementing a model-driven selection to form a continuous multilayer stack. In at least one embodiment, method 700 includes modifying a single element or combination of elements in the continuous one or more targets to include a corresponding second stoichiometric composition and obtaining the continuous one or more targets. In at least one embodiment, after modifying the composition of one or more targets (operation 780), a notification is issued to the customer of method 700. In at least one embodiment, the notification may indicate that the multilayer stack was annealed, the multilayer stack was etched, a package was formed, and / or measurements were taken on the stack. In at least one embodiment, method 700 continues with forming the multilayer stack at operation 790. In at least one embodiment, method 700 iterates at operation 720 by annealing the multilayer stack, etching the multilayer stack, etching and forming the memory device, packaging the memory device, performing measurements, matching the measurements, and determining whether the measurements are within tolerance levels until a target result is achieved. In at least one embodiment, a notification may be electronically sent to price the activities listed on the notification at operation 791. In at least one embodiment, the notification may include a list having a line item associated with the cost of changing the composition of one or more layers. In at least one embodiment, after annealing the deposited multilayer stack after the first iteration, measurements can be performed in operation 792 after operation 720 to assess whether the material composition and electrical properties are within the desired target tolerances. In at least one embodiment, the customer can be charged for performing the measurements and an invoice can be sent. In at least one embodiment, performing the measurements immediately after annealing in operation 720 saves time that would otherwise be lost in continuing to manufacture the device and discovering the results at the end of the production line. In at least one embodiment, operation 792 is eliminated and the measurements are performed after the device is manufactured (at the end of the production line in the manufacturing sequence). In at least one embodiment, in addition to changing the composition of one or more layers in the multilayer stack, additional layers may be added to the multilayer stack. In at least one embodiment, these layers may be based on picture 6 to form a multi-layer stack 600. In at least one embodiment, the customer may be charged and sent an invoice for adding additional layers to the multi-layer stack. picture 8A shows a method for picture 7. In at least one embodiment, the memory device 801 may be a planar capacitor. In at least one embodiment, the multilayer stack may have picture 3A-3B, such as the conductive layer 202, the dielectric layer 204, and the conductive layer 206. picture 8A, in at least one embodiment, a memory device 801 includes an electrode 802, a dielectric layer 804 on the electrode 802, and an electrode 806 on the dielectric layer 804. In at least one embodiment, electrode 802 comprises a first conductive non-linear polar material, wherein the first conductive non-linear polar material has a first grain size. In at least one embodiment, dielectric layer 804 comprises a perovskite material having a second grain size. In at least one embodiment, electrode 806 comprises a second conductive non-linear polar material, wherein the second conductive non-linear polar material has a third grain size that is substantially the same as the first grain size or the second grain size. In at least one embodiment, the grain size is defined by an average grain length. In at least one embodiment, perovskite film properties for high-performance devices may include a grain size that favors increasing the effective polarization in the dielectric layer. In at least one embodiment, grain size adjustment can be accomplished by performing an annealing process at high temperature. In at least one embodiment, customers can be charged and billed for grain size adjustment. In at least one embodiment, the electrode 802 comprises a perovskite material. In at least one embodiment, the perovskite material comprises one of non-Pb perovskite metal oxides, such as but not limited to La-Sr-CoO 3. SrRuO 3. La-Sr-MnO 3. YBa 2Cu 3O 7. Bi 2Sr 2CaCu 2O 8. LaNiO 3. or DyScO 3. In at least one embodiment, the electrode 802 has a nanocrystalline to polycrystalline grain structure. In at least one embodiment, the grains 802A may be irregular, as shown. In at least one embodiment, the grains 802A may have an average length L 1. In at least one embodiment, the average length L 1Range between 15 nm and 50 nm. In at least one embodiment, the die 806A has an average length L 2. In at least one embodiment, the average length L 1 and L 2 are substantially equal. In at least one embodiment, the electrode 806 includes grains 806A that are comparable in size to the grains 802A of the electrode 802. In at least one embodiment, the average length L 2 ranges between 15 nm and 50 nm. In at least one embodiment, the ratio L between the grain sizes of electrodes 802 and 806 is 1: L 2 is substantially 1:1, but may vary by less than 10%. In at least one embodiment, electrode 806 may further comprise the same material as electrode 802. In at least one embodiment, substantially identical materials provide symmetry and may provide additional advantages, such as reliability over billions of cycles during the device's operational lifetime. In at least one embodiment, different electrode materials having substantially the same grain size may be implemented in memory device 801. In at least one embodiment, this may be advantageous in some operating scenarios where at least one of electrodes 802 or 806 is coupled to an external circuit element, such as a transistor. In at least one embodiment, the dielectric layer 804 has a polycrystalline grain structure. In at least one embodiment, the grains 804A may be irregular, as shown. In at least one embodiment, the grains 804A have an average length L 3. In at least one embodiment, the average length L 3 ranges between 15 nm and 50 nm. In at least one embodiment, multiple polarization domains may exist within the die 804A. In at least one embodiment, L 1 and L The ratio between L and 3 may range from 1:3 to 3:1. In at least one embodiment, when the dielectric layer 804 includes one or more elements of the electrode 802, L 1 and L The ratio between 3 is essentially 1:1. In at least one embodiment, while grain size is a property of a layer within memory device 801, other properties exist, such as point defects. In at least one embodiment, a point defect is a site where an atom (e.g., oxygen) or a cation (e.g., Ba, Bi, Fe, and / or Ti) is missing. In at least one embodiment, point defects 803, 805, and 807 are shown as dots within electrode 802, dielectric layer 804, and electrode 806, respectively. In at least one embodiment, point defects 803, 805, and 807 may be correlated with grain size, where layers with larger grain sizes may have lower levels of point defects. In at least one embodiment, the electrode 802 has a number of atoms / cm 3 In at least one embodiment, the electrode 802 has a grain size between 15 nm and 50 nm and a number less than 1e20 atoms / cm 3 In at least one embodiment, the dielectric layer 804 has a number of less than 1e20 atoms / cm 3 In at least one embodiment, the dielectric layer 804 has a grain size between 15 nm and 50 nm and a number less than 1e20 atoms / cm 3 In at least one embodiment, the electrode 806 has a grain size between 15 nm and 50 nm and a number less than 1e20 atoms / cm 3 Point defect 807. In at least one embodiment, memory device 801 can be coupled to an external circuit element, such as a transistor, via an interconnect structure. In at least one embodiment, a transition electrode 810 is located below electrode 802. In at least one embodiment, transition electrode 810 can comprise a material such as TiN, W, Ru, TaN, or Ta. In at least one embodiment, transition electrode 810 can provide a surface for crystallization of the material of electrode 802. In at least one embodiment, controlling the grain size of the electrode and dielectric layer can tune intrinsic behavior, which is also useful for long-term device performance by mitigating damage from extrinsic processing. In at least one embodiment, ferroelectric random access memory (FeRAM) devices including lead-free perovskite materials may be susceptible to damage from reactions with hydrogen during processing. The damage may be caused by hydrogen migration along the grain boundaries between electrodes coupled to the two terminals of the FeRAM device or along the electrodes. When hydrogen reacts with one or more materials in the FeRAM device (such as the electrodes or the ferroelectric or paraelectric material itself), it can lead to reduction. Annealing operations performed during manufacturing to bind dangling bonds may be a source of hydrogen. FeRAM devices may lose their polarization hysteresis properties due to hydrogen reduction. In at least one embodiment, where memory device 801 has a planar structure (where layers are sequentially layered one on top of the other), it is useful to protect the capacitor's sidewalls, top surface, and bottom surface from reacting with hydrogen. In at least one embodiment, a solution to prevent hydrogen diffusion includes forming an insulating barrier layer, such as silicon nitride, to protect the sidewalls and top surface. In at least one embodiment, forming the insulating barrier layer to prevent hydrogen diffusion can be billed to the customer and an invoice can be sent. In at least one embodiment, contact electrodes can be formed on memory device 801 by etching through the insulating barrier layer and exposing electrode 806. In at least one embodiment, forming contacts on memory device 801 can be billed to the customer and an invoice can be sent. picture 8B illustrates a cross-sectional view of a plurality of memory devices 820 according to at least one embodiment, wherein each device 801 is at least laterally surrounded by an encapsulation layer 812. In at least one embodiment, to prevent hydrogen from reaching dielectric layer 804, memory devices 801 may be at least laterally covered by encapsulation layer 812. In at least one embodiment, sidewalls 813 of memory devices 801 are laterally surrounded by encapsulation layer 812. In at least one embodiment, encapsulation layer 812 also partially extends over the topmost surface of memory devices 801 (x and z are the x-axis and z-axis, respectively, of the plurality of memory devices 820). In at least one embodiment, the process used to deposit the encapsulation layer 812 may depend on the material used and the height of the memory device 801. In at least one embodiment including a plurality of memory devices, the deposition process may depend on the relative spacing S between adjacent memory devices. D In at least one embodiment, the deposition process used to deposit encapsulation layer 812 may not include hydrogen- or ammonia-containing chemistries to prevent hydrogen exposure to layers within memory device 801. In at least one embodiment, encapsulation layer 812 is blanket deposited. In at least one embodiment, a customer may be charged and an invoice may be sent for depositing encapsulation layer 812. In at least one embodiment, the encapsulation layer 812 comprises an insulator material. In at least one embodiment, the insulator material may comprise a metal and oxygen, such as but not limited to Al x O y , HfO x 、AlSiO x 、ZrO x , or TiO x In at least one embodiment, for example, Al x O y , HfO x 、AlSiO x 、ZrO x , or TiO x The material can be deposited in an atomic layer deposition (ALD) process without hydrogen- or ammonia-containing chemical precursors. In at least one embodiment, encapsulation layer 812 can be deposited to a thickness in the range of 0.5 nm to 10 nm. In at least one embodiment, encapsulation layer 812 can be deposited to a thickness less than 5 nm. In at least one embodiment, the ALD process can provide a substantially conformal thickness on the sidewalls of memory device 801. In at least one embodiment, a PVD deposition process may not conformally deposit encapsulation layer 812 having a uniform thickness. In at least one embodiment, a PVD process may be used. In at least one embodiment, the encapsulation layer 812 may include a material such as a compound of nitrogen and a transition metal, such as but not limited to AlN, ZrN, HfN, or a compound of Si and one or more of O and Al, Hf, or Ta, such as but not limited to AlSiO x 、HfSiO x and TaSiO xIn at least one embodiment, the PVD process may not provide substantially conformal deposition on the sidewalls of the memory device 801. In at least one embodiment, a thickness of approximately 2 nm may be sufficient to prevent hydrogen transport through the encapsulation layer 812 deposited at a material density of at least 90%. In at least one embodiment, the material of encapsulation layer 812 can be selected based on the material of dielectric layer 804. In at least one embodiment, pairing encapsulation layer 812 with dielectric layer 804 can minimize lattice dislocations that can create voids and potential pathways for hydrogen diffusion. In at least one embodiment, hydrogen can diffuse through one or more materials of the contact electrode and transition electrode 810 to electrodes 806 and 802, respectively. In at least one embodiment, a noble metal can be used on electrode 806 to prevent hydrogen from diffusing through the top surface of electrode 806. In at least one embodiment, hydrogen can also diffuse from layers beneath electrode 802. In at least one embodiment, electrode 802 can be physically isolated from the conductive interconnect by a transition electrode 810. In at least one embodiment, transition electrode 810 can be laterally surrounded by an insulator layer 808, which can act as a barrier to prevent hydrogen diffusion and provide an etch stop during patterning to form memory device 801. In at least one embodiment, an insulator comprising an amorphous material may be in direct contact with the sidewalls of the transition electrode 810 to prevent hydrogen from directly diffusing into the sidewalls. In at least one embodiment, the amorphous material may have a high film density (e.g., a film density greater than 90% of the theoretical material density or film density). In at least one embodiment, the above-described iterative method can be used to select the type of material for encapsulation layer 812 and to understand which deposition technique to use. In at least one embodiment, the iterative method is applied to select the type of material for encapsulation layer 812, and the customer can be charged and an invoice can be sent. In at least one embodiment, the dielectric 204 may determine the selection of the encapsulation layer 812. In at least one embodiment, the encapsulation layer 812 may be selected to have a Young's modulus similar to that of the dielectric 204. In at least one embodiment, the encapsulation layer 812 may be selected to have a lower probability of defects at the interface between the encapsulation layer 812 and the dielectric 204. In at least one embodiment, the encapsulation layer 812 may have a lower dielectric constant than that of the dielectric 204 to allow field lines to be concentrated between the conductive layer 202 and the conductive layer 206. In at least one embodiment, the dielectric 204 includes Pb x Zr 1-x Ti y O Group 3, the encapsulation layer 812 may include Al x O y , HfO x 、ZrO x 、TaO x or TiO x The dielectric 204 includes La x Bi 1-x Fe y O In at least one embodiment of Group 3, the encapsulation layer 812 may include Al x O y , HfO x 、ZrO x 、TaO x or TiO x The dielectric 204 includes BaTiO In at least one embodiment of Group 3, the encapsulation layer 812 may include Al x O y , HfO x 、ZrO x 、TaO x or TiO x The dielectric 204 includes BaFeO In at least one embodiment of Group 3, the encapsulation layer 812 may include Al x O y , HfO x 、ZrO x 、TaO x or TiO x. picture FIG9 is a flow chart illustrating a method 900 for iteratively developing a memory device coupled to a transistor and pricing the iterative method according to at least one embodiment. In at least one embodiment, method 900 begins at operation 910 by manufacturing a transistor or receiving a workpiece including a transistor (e.g., purchased from a third party). In at least one embodiment, a customer may be charged and an invoice may be sent for receiving a transistor wafer from a supplier, where the transistor wafer may include one or more transistors. In at least one embodiment, a customer may be charged and an invoice may be sent for manufacturing the transistor or receiving the workpiece including the transistor. In at least one embodiment, method 900 continues at operation 920 by using a combination of picture 7 to manufacture a multilayer stack. picture 9, coupling the multilayer stack to the first terminal of the transistor. In at least one embodiment, the customer may be charged a fee and an invoice may be sent for coupling the transistor to the multilayer stack. In at least one embodiment, method 900 continues with operation 930, annealing the multilayer stack. In at least one embodiment, the customer may be charged a fee and an invoice may be sent for annealing the multilayer stack. In at least one embodiment, method 900 continues with operation 940, etching the multilayer stack to form a memory device, wherein the first terminal of the memory device is coupled to the first terminal of the transistor. In at least one embodiment, method 900 continues with operation 950, forming a package around at least the memory device and forming a contact on the second end of the memory device. In at least one embodiment, the customer may be charged a fee and an invoice may be sent for etching the multilayer stack to form the memory device. In at least one embodiment, the second terminal is located above the first terminal. In at least one embodiment, method 900 continues with operation 960 by performing measurements of the chemical composition and electrical characteristics of the memory device coupled to the transistor. In at least one embodiment, the customer may be charged for performing the measurements and an invoice may be sent. In at least one embodiment, method 900 continues with operation 970 by matching the measured values ​​of the composition and electrical characteristics of the memory device coupled to the transistor with target results of a reference memory device coupled to the reference transistor. In at least one embodiment, at operation 975, a target result is provided within a tolerance level. In at least one embodiment, a price may be charged to the customer for providing the target result and an invoice may be sent, as indicated by the invoicing operation 793. In at least one embodiment, if, after matching the measured value to the target result, the measured value is not within the tolerance level of the target result, the method 900 continues to operation 980 to perform a modification in response to determining that the measured value is not within the tolerance level. In at least one embodiment, the modification includes changing the composition of one or more layers in the initial multilayer stack by implementing a model-driven selection, modifying a single element or combination of elements in the continuous one or more targets to include a corresponding second stoichiometric composition, and obtaining the continuous one or more targets to form the continuous multilayer stack. In at least one embodiment, one or more additional layers may be added or removed from the continuous multilayer stack. In at least one embodiment, a price may be charged to the customer and an invoice may be sent for modifying the composition of one or more layers in the initial multilayer stack to form the continuous multilayer stack. In at least one embodiment, method 900 iterates at operation 920 by fabricating successive multilayer stacks, annealing the successive multilayer stacks, etching the successive multilayer stacks, etching and forming memory devices, packaging the memory devices, performing measurements, matching the measurements, determining whether the measurements are within tolerance levels, and repeating until a target result is achieved. In at least one embodiment, a customer may be charged and an invoice may be sent for performing any of the iterative operations of 920, 930, 940, 950, 960, 970, and 980. In at least one embodiment, method 900 continues with operation 990, where the transistor dimensions are modified to achieve desired performance. In at least one embodiment, the transistor characteristics to be modified include saturation current, operating voltage, gate voltage, and physical dimensions. In at least one embodiment, the customer may be charged for the transistor dimension modification and an invoice may be sent, as indicated by invoicing operation 791. In at least one embodiment, the transistor may be manufactured by or purchased from a third party. In at least one embodiment, after annealing the deposited multilayer stack after the first iteration, measurements can be performed at operation 992 to assess whether the material composition and electrical properties are within desired tolerances. In at least one embodiment, the customer can be charged for performing the measurements on the multilayer stack and an invoice can be sent. In at least one embodiment, performing the measurements after annealing can save time in continuing to manufacture the device. In at least one embodiment, operation 992 can be omitted and the measurements can be performed after the device is manufactured. picture 10 shows a cross-sectional view of a 1T-1C transistor device 1000 according to at least one embodiment. In at least one embodiment, the 1T-1C (one transistor, one capacitor) transistor device 1000 includes a memory device 801 and a transistor 1002. In at least one embodiment, the memory device 801 is coupled to the transistor 1002 via a drain contact 1003. In at least one embodiment, the memory device 801 includes a memory device 801 ( picture 8A). In at least one embodiment, the memory device 801 is located on the transition electrode 810. In at least one embodiment, the transition electrode 810 is coupled to the drain contact 1003 of the transistor 1002. In at least one embodiment, the memory device 801 may be a planar capacitor ( picture 8A) or trench capacitors. In at least one embodiment, memory device 801 has a cylindrical profile. In at least one embodiment, memory device 801 may have a rectangular profile. In at least one embodiment, although memory device 801 is electrically coupled to drain contact 1003, an intervening layer of a through-hole electrode may exist between drain contact 1003 and transition electrode 810. In at least one embodiment, transistor 1002 is an example of a non-planar transistor. In at least one embodiment, transistor 1002 can be, for example, an n-type transistor (e.g., an NMOS transistor) or a p-type transistor (e.g., a PMOS transistor). In at least one embodiment, transistor 1002 includes a gate structure 1004 positioned between a source region 1006 and a drain region 1008. In at least one embodiment, source region 1006 includes an epitaxial source structure 1010 (here, source structure 1010), and drain region 1008 includes an epitaxial drain structure 1012 (here, drain structure 1012). In at least one embodiment, source structure 1010 and drain structure 1012 are separated from gate structure 1004 by spacers 1011 and have faceted sidewall surfaces 1010A and 1012A. Not all faceted surfaces of source structure 1010 and drain structure 1012 are shown. In at least one embodiment, a portion of the gate structure 1004 is located on a dielectric 1022 that separates the gate structure 1004 from the substrate 1018. In at least one embodiment, the drain contact 1003 is coupled to the drain structure 1012. In at least one embodiment, the gate structure 1004 further includes a gate dielectric layer 1005 and a gate electrode 1007. In at least one embodiment, the gate dielectric layer 1005 has a base portion on the channel 1018A and a sidewall portion adjacent to the spacer 1011. In at least one embodiment, the gate electrode 1007 is confined within the gate dielectric layer 1005. In at least one embodiment, the gate dielectric layer 1005 includes a suitable gate dielectric material, such as but not limited to an oxide of one or more of Si, Hf, Zr, La, Ti, Ta, Ga, or Al, such as SiO 2. HfO 2. ZrO 2. HfSiO x 、HfZrO 2. Ta 2O 5. Al 2O 3. La 2O 3. TaSiO x ; or Ga 2O 5. In at least one embodiment, the gate electrode 1007 can include one or more of Ti, Al, W, Pt, Co, Ni, or Pd; nitrogen; one or more of Ti, Ta, Al, Hf, or Zr; or carbon and one or more of Ti, Al, Ta, Hf, or Zr. In at least one embodiment, the source structure 1010 and the drain structure 1012 can include amorphous Si, SiC, SiGe, or Ge, and can be doped with As, P, or B, depending on the mobile charge carrier implementation. In at least one embodiment, the spacer 1011 includes silicon nitride or carbon-doped silicon nitride. In at least one embodiment, the drain contact 1003 includes a conductive material such as Ru, Ti, Co, Mo, Co, Ni, W, or Ta; or a nitride of Ti, W, or Ta. In at least one embodiment, the drain contact 1003 includes a liner layer comprising TiN, TaN, or WN, and a fill metal comprising one or more of Ru, Ti, Co, Mo, Co, Ni, W, or Ta. In at least one embodiment, memory device 801 may be further coupled to contact structure 1014. In at least one embodiment, contact structure 1014 is coupled to electrode 806. In at least one embodiment, contact structure 1014 may include a conductive hydrogen barrier layer 1016 surrounding filler material 1020. In at least one embodiment, conductive hydrogen barrier layer 1016 is in contact with encapsulation layer 812. In at least one embodiment, encapsulation layer 812 and conductive hydrogen barrier layer 1016 together provide a barrier layer for memory device 801. In at least one embodiment, the conductive hydrogen barrier layer 1016 comprises an amorphous material. In at least one embodiment, amorphous materials are desirable because they lack defined grain boundaries that facilitate hydrogen diffusion. In at least one embodiment, the conductive hydrogen barrier layer 1016 comprises, for example, but not limited to, the following materials: TiAlN, AlN > 30 atomic percent; TaN, N > 30 atomic percent; TiSiN, SiN > 20 atomic percent; Ta carbide, TaC, or Ti carbide; TiC; tungsten carbide; WC; tungsten nitride; WN; carbonitrides of Ta, Ti, or W, such as TaCN, TiCN, or WCN; titanium monoxide; TiO; Ti 2O; tungsten oxide; WO 3 or tin oxide; SnO 2; Indium tin oxide; ITO; Iridium oxide; Indium gallium zinc oxide; IGZO; Zinc oxide, or METGLAS series alloys, such as Fe 40 Ni 40 P 14 B 6. In at least one embodiment, the conductive hydrogen barrier layer 1016 has a thickness less than 5 nm. In at least one embodiment, the transition electrode 810 includes a material that provides a barrier to the diffusion of hydrogen and oxygen. In at least one embodiment, the transition electrode 810 may not include a material that provides a barrier to the diffusion of hydrogen and oxygen. In at least one embodiment, the transition electrode may be laterally surrounded by a conductive hydrogen barrier layer (e.g., conductive hydrogen barrier layer 1016). In at least one embodiment, the encapsulation layer 812 may include a material that is an oxygen diffusion barrier layer. Examples of oxygen diffusion barrier materials include silicon nitride and silicon carbide. In at least one embodiment, picture The iterative method described in 9 can be used to determine the material selection of the encapsulation layer 812, the conductive hydrogen barrier layer 1016, and the optimization of the drive current, threshold voltage and / or switching characteristics (and other parameters) of the transistor 1002. In at least one embodiment, picture Any of the processes discussed in 10 may be charged to the client. picture Figure 11 shows a flowchart 1100 for iterative pricing of target materials for device development, according to at least one embodiment. Although many operations are shown in a specific order, the order of the operations can be modified. For example, some operations can be performed before other operations in different iterations. Some of the operational blocks described herein can be performed using hardware, software, manual processing, or a combination thereof. In at least one embodiment, at operation 1101, a target material may be obtained. In at least one embodiment, the target material may be obtained based on a model-driven selection based on the target material's charge, mass, and magnetic moment, and / or the mass of its atomic composition. In at least one embodiment, the target material may be obtained based on any preference. In at least one embodiment, the target material may be obtained based on the intuitive knowledge of a person skilled in the art. In at least one embodiment, the target material comprises a PVD target material. In at least one embodiment, the target material comprises an ALD material. In at least one embodiment, the target material comprises a chemical vapor deposition (CVD) material. In at least one embodiment, the target material may comprise any combination of PVD, ALD, or CVD materials. In at least one embodiment, the target material comprises lead zirconate titanate (PZT), or PZT with a dopant material, wherein the dopant material is one of La, Nb, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, or Zn. In at least one embodiment, the dopant material comprises a material from the 3d series of the periodic table. In at least one embodiment, the target material comprises a relaxor ferroelectric material including one of lead magnesium niobate (PMN), lead magnesium niobate-lead titanate (PMN-PT), lead lanthanum zirconate titanate (PLZT), lead scandium niobate (PSN), barium titanium-bismuth zinc niobate tantalum (BT-BZNT), or barium titanium-barium strontium titanium (BT-BST). In at least one embodiment, the target material comprises a perovskite material including BaTiO 3. PbTiO 3. KNbO 3 or NaTaO 3. In at least one embodiment, the target material comprises bismuth ferrite (BFO). In at least one embodiment, the target material comprises barium titanate (BTO). In at least one embodiment, the target material comprises BFO doped with one of the following: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, or Zn. In at least one embodiment, the target material comprises BTO doped with one of the following: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, or Zn. In at least one embodiment, the target material comprises bismuth ferrite (BFO) with a doping material, wherein the doping material is lanthanum, an element from the lanthanide series of the periodic table, or one of the elements of the 3d, 4d, 5d, 6d, 4f, or 5f series of the periodic table. In at least one embodiment, the target material comprises La x Bi y FeO z (LBFO) films can be epitaxially grown on 0.7 wt% Nb-doped SrTiO3 (001) single crystal substrates. In at least one embodiment, for La x Bi y FeO z (LBFO), x is substantially equal to 0.1, y is substantially equal to 0.9, and z is substantially equal to 3. In at least one embodiment, the LBFO is doped with a dopant material. In at least one embodiment, the dopant material of the LBFO includes Mn. In at least one embodiment, the target material comprises a hexagonal ferroelectric, which includes one of the following: YMnO 3 or LuFeO 3. In at least one embodiment, the target material includes h-RMnO Type 3 hexagonal ferroelectric, wherein R is a rare earth element, including one of the following: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holomonium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), protospermium (Pr), pyroxene (Pm), samarium (Sm), scandium (Sc), zirconium (Tb), thorium (Tm), ytterbium (Yb), or yttrium (Y); hafnium (Hf), zirconium (Zr), aluminum (Al), silicon (Si), or their oxides or alloy oxides. In at least one embodiment, the target material comprises hafnium oxide, which is Hf1-x Ex Oy, where E can be Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, Zr or Y, where x and y are the first and second fractions, respectively; Al(1-x)Sc(x)N, Ga (1-x) Sc (x) N, Al (1-x) Y (x) N or Al (1-x-y) Mg (x) Nb (y) N, where x and y are the third and fourth fractions respectively; HfO doped with one of the following 2: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn or Y; or niobate-type compounds LiNbO 3. LiTaO 3. Lithium iron tantalum oxyfluoride, barium strontium niobate, sodium barium niobate, or potassium strontium niobate. In at least one embodiment, the target material comprises a non-standard ferroelectric material, including one of the following: [PTO / STO]n or [LAO / STO]n, where "n" is between 1 and 100, or comprises SrTiO 3. Ba (x) Sr (y) TiO 3. HfZrO 2. Hf-Si-O, La-substituted PbTiO 3. Or a paraelectric material based on a PMN-PT relaxor ferroelectric, wherein x and y are the fifth and sixth fractions, respectively. In at least one embodiment, a target material may be applied to a fabrication process to construct a device having a nonlinear polar material (e.g., a ferroelectric material, a paraelectric material, or a nonlinear dielectric) at operation 1102. In at least one embodiment, the fabrication process may be any of the processes described herein. In at least one embodiment, at operation 1103, a notification indicating target material acquisition and target material application may be generated. In at least one embodiment, at operation 1104, the notification is electronically transmitted to the customer. In at least one embodiment, the electronic transmission may be in the form of an email, fax, or digital image. In at least one embodiment, the notification may include a statement with a first line item related to target material acquisition costs and target material application. In at least one embodiment, the statement is one of the following: a bill of sale, an estimated cost, a royalty, equity, or a cost-plus estimate. In at least one embodiment, at operation 1105, a notification is updated after the target material acquisition and target material application iterations are completed. In at least one embodiment, payment associated with the f-list is received. In at least one embodiment, payment can be received in any form. In at least one embodiment, at operation 1106, payment can be received electronically, such as in cash, credit, credit card, Bitcoin, or any other cryptocurrency. picture FIG12 illustrates a flowchart 1200 for iteratively evaluating a precursor for device development, according to at least one embodiment. Although many operations are shown in a specific order, the order of the operations can be modified. For example, some operations can be performed before other operations in different iterations. Some of the operational blocks described herein can be performed using hardware, software, manual execution, or a combination thereof. In at least one embodiment, at operation 1201, precursors are obtained from a supplier. In at least one embodiment, the precursors include trimethylsilane (3MS) gas for low-K dielectrics and low-K diffusion barriers with copper interconnects and for etching hard masks. In at least one embodiment, the precursors include tetramethylsilane (4MS) precursors for low-K barrier films, etching hard masks, and carbon-doped silicon films and silicon carbide-based films. In at least one embodiment, the precursors include hexachlorodisilane (HCDS) precursors for conformal silicon oxide and silicon nitride applications throughout the ALD process. In at least one embodiment, the HCDS precursor is available in chemical and electronics grade. In at least one embodiment, the precursors include silicon precursors, such as tetraethylorthosilicate (TEOS). In at least one embodiment, the precursors include titanium tetrachloride. In at least one embodiment, the precursor comprises tris(dimethylamino)silane. In at least one embodiment, the precursor comprises tris(trimethylgermanyl)arsine. In at least one embodiment, the precursor comprises tetrakisdimethylamidotitanium. In at least one embodiment, the precursor comprises chemicals from Group III / V and Group II / VI. In at least one embodiment, the precursor comprises trimethylgallium, triethylgallium, trimethylindium, trimethylaluminum, tert-butylarsine, tert-butylphosphine, dimethylhydrazine, tetrabromomethane, and / or diethyltelluride. In at least one embodiment, the precursor comprises a two-dimensional (2D) material. In at least one embodiment, the precursor includes molybdenum hexacarbonyl (Mo(CO)6), tungsten hexacarbonyl (W(CO)6), diisopropyl selenide (DiPSe), bis(tert-butyliminobisdimethylaminowolframvi (BTMW), bis(tert-butylimido)bis(dimethylamido)molybdenum (BTMMo), diethyl telluride (DETe), and / or methylallyl telluride (MATe). In at least one embodiment, the precursor includes tris(cyclopentadienyl) scandium (Cp3Sc) and / or trimethylmethylcyclopentadienyl platinum (MeCpPtMe3). In at least one embodiment, in operation 1202, precursors are supplied to a manufacturing process to construct a device (e.g., a ferroelectric device, a paraelectric device, a nonlinear dielectric device, and / or a magnetic tunneling junction, etc.). In at least one embodiment, in operation 1203, a notification is updated or a new notification is generated indicating that a certain amount of precursor has been obtained and / or a precursor has been supplied. In at least one embodiment, in operation 1204, the notification is electronically transmitted to the customer. In at least one embodiment, the notification includes a list with a line item related to a certain amount of precursor cost and / or precursor supply. In at least one embodiment, in operation 1205, the notification is updated after completing an iteration of the precursor acquisition and / or precursor supply. In at least one embodiment, a payment associated with the list is received. In at least one embodiment, in operation 1206, the payment can be received in any form. In at least one embodiment, the payment can be received electronically, such as cash, credit, credit card, Bitcoin, or any other cryptocurrency. picture 13 illustrates a flowchart 1300 for iterative valuation when several turns are used for device development, according to at least one embodiment. Although many operations are shown in a particular order, the order of the operations can be modified. For example, some operations can be performed before other operations in different iterations. Some of the operational blocks described herein can be performed using hardware, software, manual execution, or a combination thereof. In at least one embodiment, in operation 1301, a number of lot turns associated with a manufacturing process are determined. In at least one embodiment, a lot turn represents a wafer being processed by one or more machines, wherein the number of lot turns represents a number of operations performed on the wafer by one or more machines. In at least one embodiment, the number of operations includes operations that result in structural changes to a device (e.g., a ferroelectric device, a paraelectric device, and / or a nonlinear dielectric). In at least one embodiment, the number of operations includes operations that result in compositional changes to a device material. In at least one embodiment, the number of operations includes operations that result in changes in the grain size of a device material. In at least one embodiment, the number of operations includes operations that result in changes in the crystal orientation of a device material. In at least one embodiment, the number of operations includes operations that result in thermodynamic changes to a device material. In at least one embodiment, at operation 1302, a base cost is determined for each batch process. In at least one embodiment, at operation 1303, a total cost may be calculated as the sum of the base costs for each batch process. In at least one embodiment, at operation 1304, a notification displaying the number of batch processes and the total cost may be updated or a new notification schedule may be generated. In at least one embodiment, at operation 1305, a notification is electronically transmitted to the customer. In at least one embodiment, the notification includes a list with a line item related to the number of batch processes and the total cost. In at least one embodiment, payment associated with the list is received. In at least one embodiment, at operation 1306, payment may be received in any form. In at least one embodiment, payment may be received electronically, such as in cash, credit, credit card, Bitcoin, or any other cryptocurrency. picture 14 illustrates a flow chart 1400 for iteratively evaluating materials for device development, according to at least one embodiment. Although various operations are shown in a particular order, the order of the operations can be modified. For example, some operations can be performed before other operations in different iterations. Some of the operational blocks described herein can be performed using hardware, software, manual processing, or a combination thereof. In at least one embodiment, at operation 1401, a material may be obtained. In at least one embodiment, the material may be obtained based on a model-driven selection based on the material's charge, mass, and magnetic moment, and / or the quality of its atomic composition. In at least one embodiment, the material may be obtained by an expert (e.g., through intuitive knowledge gained from field training). In at least one embodiment, the material is a bulk material. In at least one embodiment, the material is a selective material. In at least one embodiment, the material includes the materials discussed herein with reference to target materials. In at least one embodiment, at operation 1402, the acquired material is applied to a manufacturing process to construct a device (e.g., a ferroelectric device, a paraelectric device, a nonlinear dielectric device, and / or a magnetic tunneling junction). In at least one embodiment, at operation 1403, a notification indicating the acquisition of the material and the application of the target material may be generated or updated. In at least one embodiment, at operation 1404, the notification is electronically transmitted to the customer. In at least one embodiment, the electronic transmission may be in the form of an email, fax, or digital image. In at least one embodiment, the notification may include a statement with a line item (e.g., the first line item) related to the cost of acquiring the material and the application of the material. In at least one embodiment, the statement is one of the following: a sales bill, an estimated cost, a royalty, equity, or a cost-plus estimate. In at least one embodiment, at operation 1405, the notification is updated after the iterations of acquiring and applying the material are completed. In at least one embodiment, payment associated with the statement is received. In at least one embodiment, the payment may be received in any form. In at least one embodiment, the payment may be received electronically, such as in cash, credit, a credit card, Bitcoin, or any other cryptocurrency. picture FIG15 illustrates a flowchart 1500 for iterative pricing of manufacturing a memory device when the memory device is integrated with one or more active devices, according to at least one embodiment. Although many operations are shown in a particular order, the order of the operations can be modified. For example, some operations can be performed before other operations in different iterations. Some of the operational blocks described herein can be performed using hardware, software, manual processing, or a combination thereof. In at least one embodiment, at operation 1501, a memory device is manufactured by coupling one or more transistors to a device (e.g., a ferroelectric device, a paraelectric device, a nonlinear dielectric device, a magnetic tunneling junction, etc.). In at least one embodiment, at operation 1502, a notification indicating the manufacturing of the memory device is generated or updated. In at least one embodiment, at operation 1503, the notification is electronically transmitted to a customer. In at least one embodiment, the notification includes a list having a line item (e.g., the fifth line item) related to the manufacturing of the memory device. picture 16 shows a flowchart 1600 for iterative pricing of transistor wafers used to develop memory devices, according to at least one embodiment. Although many operations are shown in a specific order, the order of the operations can be modified. For example, some operations can be performed before other operations in different iterations. Some of the operational blocks described herein can be performed using hardware, software, manual processing, or a combination thereof. In at least one embodiment, at operation 1601, a transistor wafer is obtained. In at least one embodiment, the transistor wafer includes front-end-of-the-line (FEOL) transistors. In at least one embodiment, the transistor wafer includes back-end-of-the-line (BEOL) transistors. In at least one embodiment, at operation 1602, memory devices are fabricated on the transistor wafer, wherein the memory devices include devices (e.g., ferroelectric devices, paraelectric devices, nonlinear dielectrics). In at least one embodiment, at operation 1603, a notification is generated or updated indicating the acquisition of the transistor wafer and the fabrication of the memory devices. In at least one embodiment, at operation 1604, a notification is electronically transmitted to a customer, wherein the notification includes a bill having a line item related to the cost of acquiring the transistor wafer and fabricating the memory devices. In at least one embodiment, at operation 1605, a payment associated with the bill is received. In at least one embodiment, the payment may be received according to any suitable method discussed herein. picture FIG17 illustrates a flowchart 1700 for iterative evaluation of measuring electrical and / or chemical properties of a memory device, according to at least one embodiment. Although many operations are shown in a particular order, the order of the operations can be modified. For example, some operations can be performed before other operations in different iterations. Some of the operational blocks described herein can be performed using hardware, software, manual execution, or a combination thereof. In at least one embodiment, at operation 1701, electrical and / or chemical properties of a memory device and / or a device (e.g., a ferroelectric device, a paraelectric device, a nonlinear dielectric device, a magnetic tunneling junction, etc.) are measured. In at least one embodiment, at operation 1702, a notification is generated or updated, wherein the notification indicates that the electrical and / or chemical properties were measured. In at least one embodiment, at operation 1703, the notification is electronically transmitted to a customer. In at least one embodiment, the notification includes a list having a line item (e.g., the seventh line item) related to the measured electrical and / or chemical properties. In at least one embodiment, at operation 1704, payment associated with the list is received. picture FIG18 illustrates a flowchart 1800 for iterative pricing when multiple project wafers are used for device development, according to at least one embodiment. Although many operations are shown in a specific order, the order of the operations can be modified. For example, some operations can be performed before other operations in different iterations. Some of the operational blocks described herein can be performed using hardware, software, manual processing, or a combination thereof. In at least one embodiment, at operation 1801, a multi-project wafer is acquired. In at least one embodiment, at operation 1802, materials are integrated onto the multi-project wafer. In at least one embodiment, such materials may be target materials discussed herein or selective materials discussed herein. In at least one embodiment, at operation 1803, a notification is generated or updated, wherein the notification indicates the acquisition of the multi-project wafer and the integration of materials. In at least one embodiment, at operation 1804, the notification is electronically transmitted to the customer. In at least one embodiment, the notification includes a line item regarding the cost of acquiring the multi-project wafer and the integration of materials. In at least one embodiment, at operation 1805, the notification is electronically transmitted to the customer. In at least one embodiment, the notification includes a line item regarding the cost of acquiring the production wafer and the integration of materials. In at least one embodiment, at operation 1805, a payment associated with the notification is received. In at least one embodiment, a method is provided that includes acquiring a production wafer. In at least one embodiment, the method further includes integrating materials onto the production wafer. In at least one embodiment, the method further includes generating a notification indicating the acquisition of the production wafer and the integration of the materials. In at least one embodiment, the method further includes electronically transmitting the notification to a customer. In at least one embodiment, the notification includes a bill with a line item related to the cost of acquiring the production wafer and the integration of the materials. In at least one embodiment, the method further includes receiving a payment associated with the bill. As used herein, the term "device" may generally refer to an apparatus depending on the context in which the term is used. For example, a device may refer to a stack of layers or structures, a single structure or layer, a connection of multiple structures with active and / or passive components, and so on. Generally, a device is a three-dimensional structure having a plane along the xy directions of an xyz Cartesian coordinate system and a height along the z direction. The plane of a device may also be the plane of the apparatus containing the device. Throughout the specification and claims, the term "connected" may generally refer to a direct connection, such as an electrical, mechanical, or magnetic connection between the things being connected without any intervening devices. Herein, the term "coupled" may generally refer to a direct or indirect connection, such as a direct electrical, mechanical, or magnetic connection between the things being connected, or an indirect connection through one or more passive or active intermediary devices. As used herein, the term "adjacent" may generally refer to a position of an object that is immediately adjacent to (eg, next to or near, with one or more objects interposed therebetween) or adjacent to (eg, next to) another object. Herein, the term “circuit” or “module” may refer to one or more passive and / or active components arranged to cooperate with each other to provide a desired function. Herein, the term "signal" generally refers to at least one current signal, voltage signal, magnetic signal, or data / clock signal. The meanings of "a," "an," and "the" include plural references. The meaning of "in" includes "in" and "on." As used herein, the term "analog signal" may generally refer to any continuous signal where a time-varying characteristic (variable) of the signal is representative of some other time-varying characteristic, eg, similar to another time-varying signal. Here, "digital signal" may generally refer to a physical signal, which is a representation of a series of discrete values ​​(a quantized discrete-time signal), such as an arbitrary bit stream or a digitized (sampled and analog-to-digital converted) analog signal. "Scaling" generally refers to converting a design (schematic and layout) from one process technology to another and subsequently reducing the layout area. Here, the term "scaling" also generally refers to reducing the size of the layout and devices within the same technology node. Here, the term "scaling" can also refer to adjusting (e.g., slowing down or speeding up—i.e., scaling down or scaling up, respectively) the frequency of a signal relative to another parameter (e.g., power supply level). As used herein, the terms "substantially," "close," "approximately," "approximately," and "about" generally refer to within + / - 10% of a target value. For example, unless the context of their use clearly indicates otherwise, the terms "substantially equal," "approximately equal," and "approximately equal" mean that only incidental variations exist between the items being described. In this context, such variations generally do not exceed + / - 10% of the intended target value. Unless otherwise indicated, the use of ordinal adjectives such as "first," "second," and "third" to describe common objects indicates only that different instances of similar objects are being referred to and is not intended to imply that the objects must be in a given order, whether in time, space, order, or in any other manner. As used herein, the phrase "A and / or B" and "A or B" means (A), (B), or (A and B). As used herein, the phrase "A, B and / or C" means (A), (B), (C), (A and B), (A and C), (B and C), or (A, B and C). As used herein, the terms "left," "right," "front," "back," "top," "bottom," "above," "below," and the like, if any, are used for descriptive purposes and are not necessarily intended to describe permanent relative positions. For example, the terms "above," "below," "front," "back," "top," "bottom," "above," "below," and "upper" as used herein refer to the relative position of one component, structure, or material relative to other referenced components, structures, or materials within a device, where such physical relationships are important. These terms are used herein for descriptive purposes only and primarily in the context of the device's z-axis and, therefore, may be relative to the device's orientation. As used herein, a first material that is "above" a second material in the context of the figures provided herein may also be "below" the second material if the device is oriented upside down relative to the provided figure context. With respect to materials, a material disposed above or below another material may be in direct contact or may have one or more intervening materials. Furthermore, a material disposed between two materials may be in direct contact with both layers or may have one or more intervening layers. In contrast, a first material "on" a second material is in direct contact with the second material. Similar differences exist in the context of component assemblies. The term "between" can be used in the context of the z-axis, x-axis, or y-axis of a device. A material between two other materials can be in contact with one or both of those materials, or it can be separated from both of the other two materials by one or more intervening materials. A material "between" two other materials can therefore be in contact with either of the other two materials, or it can be coupled to the other two materials through an intervening material. A device between two other devices can be directly connected to one or both of those devices, or it can be separated from both of the other two devices by one or more intervening devices. Here, multiple layers of non-silicon semiconductor material may be stacked within the fin structure. In at least one embodiment, the multiple layers of non-silicon semiconductor material may include one or more "P-type" layers suitable for P-type transistors (e.g., providing higher hole mobility than silicon). In at least one embodiment, the multiple layers of non-silicon semiconductor material may further include one or more "N-type" layers suitable for N-type transistors (e.g., providing higher electron mobility than silicon). In at least one embodiment, the multiple layers of non-silicon semiconductor material may further include one or more intervening layers separating the N-type layer from the P-type layer. In at least one embodiment, the intervening layers may be at least partially sacrificial, for example, to allow one or more of the gate, source, or drain to completely surround the channel region of one or more of the N-type and P-type transistors. In at least one embodiment, the multiple layers of non-silicon semiconductor material may be fabricated, at least in part, using self-aligned techniques, such that a stacked CMOS device may include both high-mobility N-type and P-type transistors with a single FET (field effect transistor) footprint. Herein, the "back end" generally refers to the portion of the die opposite the "front end" where the IC package is coupled to the IC die bumps. In at least one embodiment, the upper metal layers closer to the die package (e.g., metal layers 6 and above in a ten-metal stack die) and the corresponding vias are considered part of the die back end. In at least one embodiment, the "front end" generally refers to the portion of the die that includes the active region (e.g., where transistors are fabricated) and the lower metal layers closer to the active region (e.g., metal layers 5 and below in the ten-metal stack die example) and the corresponding vias. In at least one embodiment, the materials described herein are illustrated in the accompanying drawings by way of example and not limitation. In at least one embodiment, for simplicity and clarity of illustration, the elements shown in the drawings are not necessarily drawn to scale. In at least one embodiment, the dimensions of some elements may be exaggerated relative to other elements for clarity. In at least one embodiment, for clarity of discussion, various physical features may be shown in their simplified "ideal" forms and geometries, with the understanding that actual implementations may approach the ideals shown. In at least one embodiment, smooth surfaces and square intersections may be depicted, ignoring the finite roughness, rounded corners, and imperfect angular intersection features of structures formed by nanofabrication techniques. In at least one embodiment, reference numbers have been repeated in the figures to indicate corresponding or similar elements where deemed appropriate. References in the specification to "one embodiment", "an embodiment", "some embodiments" or "other embodiments", or "at least one embodiment" generally mean that the particular features, structures or characteristics described in conjunction with one embodiment may be included in at least one embodiment, but not necessarily all embodiments. The appearance of multiple "one embodiment", "one embodiment", "at least one embodiment" or "some embodiments" do not necessarily refer to the same embodiment. The fact that a component, feature, structure or characteristic "may", "might" or "can" be included does not necessarily mean that the component, feature, structure or characteristic is included. If the specification or claims refer to "an" element, it does not mean only one element. If the specification or claims refer to "additional" elements, it does not exclude the presence of more than one additional element. In addition, in at least one embodiment, features, structures, functions or characteristics may be combined in any appropriate manner. For example, the first embodiment may be combined with the second embodiment where the specific features, structures, functions or characteristics associated with the two embodiments are not mutually exclusive. Although the present invention has been described in conjunction with at least one embodiment, many alternatives, modifications, and variations of the at least one embodiment will be apparent to those skilled in the art upon consideration of the foregoing description. The at least one embodiment is intended to encompass all such alternatives, modifications, and variations that fall within the broad scope of the appended claims. In addition, known power / ground connections to integrated circuit (IC) chips and other components may or may not be shown in the presented figures to facilitate a concise description and discussion without obscuring the present invention. Further, the layout may be shown in block diagram form to avoid obscuring at least one embodiment, and it is also considered that the details of the implementation of such block diagram layouts are highly dependent on the platform on which at least one embodiment will be implemented (e.g., such details should be well within the capabilities of those skilled in the art). Where specific details (e.g., circuits) are set forth to describe at least one embodiment, it should be apparent to those skilled in the art that such disclosure may be practiced without or with variations in such specific details. Therefore, at least one embodiment should be considered illustrative and not restrictive. The structures of at least one embodiment described herein may also be described as methods of forming those structures or devices, and methods of operating those structures or devices. In at least one embodiment, the methods may be performed by hardware, software, or a combination thereof. In at least one embodiment, one or more machine-readable storage media (e.g., memory) are provided that store one or more machine-executable instructions. In at least one embodiment, when a machine (e.g., one or more processors) executes the one or more machine-executable instructions, one or more methods described herein are performed. In at least one embodiment, the machine-readable storage medium is a tangible, non-transitory machine-readable medium. In at least one embodiment, the machine-readable storage medium includes one or a combination of volatile or non-volatile memory. The following examples are provided to illustrate at least one embodiment. Examples may be combined with other examples. Thus, at least one embodiment may be combined with at least one other embodiment without changing the scope of at least one embodiment. Example 1: A method for pricing a process development for a nonlinear polar material, the method comprising: obtaining a target material; applying the target material to a manufacturing process to construct a device having the nonlinear polar material; generating a notification indicating the acquisition of the target material and the application of the target material; and electronically transmitting the notification to a customer, wherein the notification includes a bill having a first line item related to the cost of obtaining the target material and the application of the target material. Example 2: The method of Example 1, wherein obtaining the target material is based on a model-driven selection based on the charge, mass and magnetic moment of the target material, and / or the mass of the atomic composition. Example 3: The method of Example 1, wherein obtaining the target material is based on human expertise. Example 4: The method of Example 1 further includes updating the notification after completing the iteration of target material acquisition and target material application. Example 5: The method of Example 1, wherein the item is one of the following: a bill of sales, an estimated cost, a royalty, equity capital, or a cost-plus estimate. Example 6: The method of Example 1, wherein the target material comprises one or a combination of a physical vapor deposition (PVD) target material, an ALD target material, or a CVD target material. Example 7: The method of Example 1, wherein the target material is one of the following: a perovskite material comprising BaTiO 3. PbTiO 3. KNbO 3 or NaTaO 3; bismuth ferrite (BFO); barium titanate (BTO); BFO doped with one of the following: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu or Zn; BTO doped with one of the following: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu or Zn; LBFO doped with Mn; lead zirconate titanate (PZT), or PZT with a doping material, wherein the doping material is La, Nb, Mc, Sc or one of the 5d series elements; bismuth ferrite (BFO) with a doping material, wherein the doping material is lanthanum, an element from the lanthanide series of the periodic table, or one of the 3d, 4d, 5d, 6d, 4f and 5f series elements of the periodic table; relaxor ferroelectric materials including lead magnesium niobate (PMN), lead magnesium niobate-lead titanate (PMN-PT), lead lanthanum zirconate titanate (PLZT) ), scandium lead niobate (PSN), barium titanium-bismuth zinc niobium tantalum (BT-BZNT), or barium titanium-strontium barium titanium (BT-BST); a hexagonal ferroelectric comprising one of the following: YMnO 3 or LuFeO 3; h-RMnO Type 3 hexagonal ferroelectric, wherein R is a rare earth element, which includes one of the following: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), thallium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), protospermium (Pr), pyroxene (Pm), samarium (Sm), scandium (Sc), zirconium (Tb), thorium (Tm), ytterbium (Yb) or yttrium (Y); hafnium (Hf), zirconium (Zr), aluminum (Al), silicon (Si), their oxides or alloy oxides; hafnium oxide, which is Hf1-xExOy, where E can be Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, Zr or Y, where x and y are the first and second fractions respectively; Al(1-x)Sc(x)N, Ga (1-x) Sc (x) N, Al (1-x) Y (x) N or Al (1-x-y) Mg (x) Nb (y) N, where x and y are the third and fourth fractions respectively; HfO doped with one of the following 2: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn or Y; or niobate-type compounds LiNbO 3. LiTaO 3. Lithium iron tantalum oxyfluoride, barium strontium niobate, sodium barium niobate, or potassium strontium niobate; or non-standard ferroelectric materials including one of the following: [PTO / STO]n or [LAO / STO]n, where "n" is between 1 and 100, or containing SrTiO 3. Ba (x) Sr (y) TiO 3. HfZrO 2. Hf-Si-O, La-substituted PbTiO 3. Or a paraelectric material based on a PMN-PT relaxor ferroelectric, wherein x and y are the fifth and sixth fractions, respectively. Example 8: The method of Example 1 further includes: obtaining a precursor from a supplier; supplying the precursor to a manufacturing process to construct a device having a nonlinear polar material; updating a notification indicating a quantity of precursor obtained and a quantity of precursor supplied; and electronically transmitting the notification to a customer, wherein the notification includes a list having a second line item related to a cost of the quantity of precursor and the quantity of precursor supplied. Example 9: The method of Example 1, wherein the method further includes: determining a number of batch processes associated with the manufacturing process; determining a base cost for each batch process; calculating a total cost that is the sum of the base costs of each batch process; updating a notification displaying the number of batch processes and the total cost; and electronically transmitting the notification to the customer, wherein the notification includes a list having a third line item related to the number of batch processes and the total cost. Example 10: The method of Example 9, wherein each batch process represents processing of a wafer by one or more machines, wherein the plurality of batch processes represents a plurality of operations performed on the wafer by the one or more machines. Example 11: The method of Example 10, wherein the plurality of operations include: a first operation that causes a first change in the structure of a device having a nonlinear polar material; a second operation that causes a second change in the composition of a second material of the device having a nonlinear polar material; a third operation that causes a third change in the particle size of a third material of the device having a nonlinear polar material; a fourth operation that causes a fourth change in the crystal orientation of a fourth material of the device having a nonlinear polar material; and / or a fifth operation that causes a fifth change in the thermodynamics of a fifth material of the device having a nonlinear polar material. Example 12: The method of Example 1, further comprising: obtaining a batch of material; applying the material to a manufacturing process to construct a device having a nonlinear polar material; updating a notification indicating the material acquisition and material application; and electronically transmitting the notification to the customer, wherein the notification includes a fourth line item related to the material acquisition cost and the material application. Example 13: The method of Example 1, wherein obtaining the target material includes obtaining a batch of target material. Example 14: The method of Example 1 further includes: manufacturing a memory device by coupling one or more transistors to a device having a nonlinear polarity material; updating a notification indicating that the memory device is manufactured; and electronically transmitting the notification to a customer, wherein the notification includes a list having a fifth line item related to manufacturing the memory device. Example 15: The method of Example 1 further includes: obtaining a transistor wafer; fabricating a memory device on the transistor wafer, wherein the memory device includes a device having a nonlinear polarity material; updating a notification indicating that the transistor wafer has been obtained and the memory device has been fabricated; and electronically transmitting the notification to the customer, wherein the notification includes a sixth line item related to the cost of obtaining the transistor wafer and fabricating the memory device. Example 16: The method of Example 15, further comprising: measuring electrical and / or chemical properties of the memory device and / or the device having a non-linear polar material; updating a notification indicating that the electrical and / or chemical properties were measured; and electronically transmitting the notification to the customer, wherein the notification includes a list having a seventh line item related to the measured electrical and / or chemical properties. Example 17: The method of Example 1 further includes: obtaining a multi-item wafer; integrating materials on the multi-item wafer; updating a notification indicating the multi-item wafer acquisition and material integration; and electronically transmitting the notification to the customer, wherein the notification includes a list having an eighth line item related to the cost of obtaining the multi-item wafer and the material integration. Example 18: The method of Example 1 further includes receiving a payment associated with the invoice. Example 19: The method of Example 1 further includes: modeling the electrical and / or chemical properties of the target material to generate a representative model of the target material; generating a notification displaying the representative model; and electronically transmitting the notification to the customer, wherein the notification includes a bill having a line item related to the cost of modeling the electrical and / or chemical properties. Example 20: A method for pricing process development, the method comprising: obtaining a production wafer; integrating material on the production wafer; generating a notification indicating the production wafer acquisition and material integration; and electronically transmitting the notification to a customer, wherein the notification includes a bill having a line item related to the cost of obtaining the production wafer and the material integration. Example 21: The method of Example 20 further includes receiving a payment associated with the invoice. Example 22: A method for developing a price for a process, the method comprising: determining a number of batch processes associated with a manufacturing process; determining a base cost for each batch process; calculating a total cost that is the sum of the base costs for each batch process; updating a notice indicating the number of batch processes and the total cost; and electronically transmitting the notice to a customer, wherein the notice includes a list having a line item associated with the number of batch processes and the total cost. Example 23: The method of Example 22, wherein each batch process represents processing of a wafer by one or more machines, wherein the plurality of batch processes represents a plurality of operations performed on the wafer by the one or more machines. The abstract is provided to allow the reader to ascertain the nature and gist of at least one embodiment. The abstract is submitted with the understanding that it will not be used to limit the scope or meaning of the claims. The following claims are hereby incorporated into the detailed description, with each claim standing on its own as a separate embodiment. 100: Method 100A: Dashed Square 110: Operation 120: Operation 130: Operation 132: Operation 140: Operation 150: Operation 160: Operation 170: Operation 180: Operation 190: Operation 195: Operation 200: Stack 200': Stack 200": Stack 202: Conductive Layer 204: Dielectric 204': Dielectric Layer 204": Dielectric Layer 204A: Perovskite Structure 206: Conductive Layer 208: Substrate 300A: Method 300B: Method 302: Target 304: Tool 306: Model 308: Target 400: Polarization vs. Electric Field (PE Curve) 422: PE curve portion 424: PE curve portion 426: PE curve portion 500: Method 500A: Dashed square 510: Annealing operation 600: Multilayer stack 602: Conductive layer 604: Conductive layer 700: Method 710: Operation 720: Operation 730: Operation 740: Operation 750: Operation 760: Operation 770: Operation 780: Operation 790: Operation 791: Operation 792: Operation 793: Operation 795: Operation 801: Memory device 802: Electrode 802A: Grain 803: Point defect 804: Dielectric layer 804A: Grain 805: Point defect 806: Electrode 806A: Grain 80 7: Point defect 808: Insulator layer 810: Transition electrode 812: Encapsulation layer 813: Sidewall 820: Memory device 900: Method 910: Operation 920: Operation 930: Operation 940: Operation 950: Operation 960: Operation 970: Operation 975: Operation 980: Operation 990: Operation 992: Operation 1000: 1T-1C transistor device 1002: Transistor 1003: Drain contact 1004: Gate structure 1005: Gate dielectric layer 1006: Source region 1007: Gate electrode 1008: Drain region 1010: Epitaxial source structure, source structure 1010A: Sidewall surface 1011: Spacer 1012: Epitaxial drain structure, drain structure 1012A: Sidewall surface 1014: Contact structure 1016: Conductive hydrogen barrier layer 1018: Substrate 1018A: Channel 1020: Filling material 1022: Dielectric 1100: Flowchart 1101: Operation 1102: Operation 1103: Operation 1104: Operation 1105: Operation 1106: Operation 1200: Flowchart 1201: Operation 1202: Operation 1203: Operation 1204: Operation 1205: Operation 1206: Operation 1300: Flowchart 1301: Operation 1302: Operation 1303: Operation 1304: Operation1305: Operation 1306: Operation 1400: Flowchart 1401: Operation 1402: Operation 1403: Operation 1404: Operation 1405: Operation 1500: Flowchart 1501: Operation 1502: Operation 1503: Operation 1600: Flowchart 1601: Operation 1602: Operation 1603: Operation 1604: Operation 1605: Operation 1700: Flowchart 1701: Operation 1702: Operation 1703: Operation 1704: Operation 1800: Flowchart 1801: Operation 1802: Operation 1803: Operation 1804: Operation 1805: Operation I 1: Interface layer I 2: Interface layer L 1: Average length L 2: Average length L 3: Average length S D :Relative spacing T 1:Thickness T 2: Thickness T 3: Thickness T N :thickness The embodiments can be more fully understood from the detailed description given below and the accompanying drawings of various embodiments of the present invention. However, the embodiments should not be considered to limit the present invention to specific embodiments, but are only for explanation and understanding. picture 1 is a flow chart of a method for iteratively developing a multi-layer stack applied to a memory device and pricing the iterative method according to at least one embodiment. picture 2A is a representative three-layer stack according to at least one embodiment. picture 2B schematically illustrates a method according to at least one embodiment picture The perovskite crystal structure of the polar layer in the material layer stack in 2A. picture 3A shows a flow chart illustrating a method for performing iterative multi-layer stack deposition using one or more targets in a tool, according to at least one embodiment. picture 3B shows a flow chart illustrating a method for performing multi-layer stack deposition iterations using one or more targets in a tool according to at least one embodiment. picture FIG4 shows a diagram of polarization versus electric field for a representative multilayer stack including a nonlinear polar material (eg, a ferroelectric material) according to at least one embodiment. picture 5 is a flow chart illustrating a method for iteratively developing a multi-layer stack for use in a memory device and pricing the iterative method according to at least one embodiment, wherein the method further includes annealing the multi-layer stack. picture 6 shows a method according to at least one embodiment including picture Cross-sectional view of a multilayer stack of nonlinear polar materials (e.g., ferroelectric materials) deposited according to the flow chart in FIG5 . picture FIG7 is a flow chart illustrating a method for iteratively developing a memory device and pricing the iterative method according to at least one embodiment. picture 8A shows a method for picture 7 is a cross-sectional view of a memory device obtained by patterning the multilayer stack obtained. picture 8B illustrates a cross-sectional view of a plurality of memory devices according to at least one embodiment, wherein each device is at least laterally surrounded by an encapsulation layer. picture 9 is a flow chart illustrating a method for iteratively developing a memory device coupled to a transistor and pricing the iterative method according to at least one embodiment. picture 10 shows a cross-sectional view of a 1T-1C transistor device according to at least one embodiment. picture FIG11 is a flow chart illustrating iterative pricing of target materials for device development according to at least one embodiment. picture FIG12 is a flow chart illustrating iterative pricing of precursors for device development according to at least one embodiment. picture FIG13 is a flow chart illustrating iterative pricing when several turns are used for device development according to at least one embodiment. picture 14 shows a flow chart for iterative pricing of materials when used in device development according to at least one embodiment. picture 15 is a flow chart illustrating iterative pricing for manufacturing a memory device when the memory device is integrated with one or more active devices, according to at least one embodiment. picture FIG16 is a flow chart illustrating iterative pricing of transistors used in memory device development according to at least one embodiment. picture FIG17 is a flow chart illustrating an iterative evaluation of measuring electrical and / or chemical characteristics of a memory device according to at least one embodiment. picture 18 is a flow chart illustrating iterative pricing of multi-project wafers when the multi-project wafers are used for device development according to at least one embodiment. 1200: Flowchart 1201: Operation 1202: Operation 1203: Operation 1204: Operation 1205: Operation 1206: Operation

Claims

1. A pricing method for developing a process for a nonlinear polar material, the method comprising: obtaining a precursor from a supplier; supplying the precursor to a manufacturing process for constructing an apparatus having a nonlinear polar material; updating a notification displaying a quantity of the precursor obtained and supplied using a computer; electronically transmitting the notification to a customer using the computer, wherein the notification includes a list having a first line of items associated with the cost of the quantity of the precursor and the supply of the precursor; updating the notification and generating an updated notification using the computer after completing one iteration of the acquisition and supply of the precursor; and electronically transmitting the updated notification to the customer using the computer to provide an in-process inventory for the manufacturing process constructing the apparatus having the nonlinear polar material, including the in-process inventory providing cost-perceived visibility of the manufacturing process to the manufacturing process.

2. The pricing method for developing nonlinear polar material processes as described in claim 1, wherein the precursor comprises one or more of the following: trimethylsilane (3MS) gas, tetramethylsilane (4MS), hexachlorosilane (HCDS), tetraethylsiloxane, tris(dimethylamino)silane, tris(trimethylgermanium)arsine, tetradimethylaminotitanium, chemicals from Group III / V and II / VI, trimethylgallium, triethylgallium, trimethylindium, trimethylaluminum, tert-butylarsine, tert-butylphosphine, dimethylhydrazine, tetrabromomethane, diethyl telluride, two-dimensional (2D) materials, hexacarbonylmolybdenum (Mo(CO)6), hexacarbonylmolybdenum, ... Carbonyl tungsten (W(CO)6), diisopropyl selenide (DiPSe), bistert-butyliminobisdimethylaminowolframvi (BTMW), bis(tert-butylimino)bis(dimethylamido)molybdenum (BTMMo), diethyl telluride (DETe), methylallyl telluride (MATe), tris(cyclopentadienyl)scandium (Cp3Sc) and / or trimethylmethylcyclopentadienylplatinum (MeCpPtMe3).

3. The pricing method for developing processes for nonlinear polar materials as described in claim 1, wherein the precursor system is obtained based on human expertise.

4. The method for pricing the development of nonlinear polar material processes as described in claim 1, wherein the list is one of the following: sales invoices, estimated costs, royalty payments, equity capital, or cost-plus estimates.

5. The pricing method for developing nonlinear polar material processes as described in claim 1, wherein the nonlinear polar material is one of the following: perovskite materials, including one of BaTiO3, PbTiO3, KNbO3 or NaTaO3; bismuth ferrite (BFO); barium titanate (BTO); BFO doped with one of the following: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu or Zn; BTO doped with one of the following: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu or Zn; LBFO doped with Mn; lead zirconate titanate (PZT), or PZT having a first dopant material, wherein the first dopant material is one of La, Nb, Mn or 5d series elements; Bismuth ferrite (BFO) having a second doping material, wherein the second doping material is one of lanthanum, an element from the lanthanide series of the periodic table, or an element from the 3d, 4d, 5d, 6d, 4f, and 5f series of the periodic table; a relaxed ferroelectric material, including one of lead magnesium niobate (PMN), lead magnesium niobate-lead titanate (PMN-PT), lead lead zirconate titanate-lanthanum (PLZT), lead scandium niobate (PSN), barium titanium-bismuth zinc niobium tantalum (BT-BZNT), or barium titanium-titanium strontium barium (BT-BST); a hexagonal ferroelectric, including one of the following: YMnO3 or LuFeO3; an h-RMnO3 type hexagonal ferroelectric, wherein R is a rare earth element, including one of the following: Cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), thorium (Gd), holmium (Ho), lanthanum (La), argonium (Lu), neodymium (Nd), pterium (Pr), pyroxene (Pm), samarium (Sm), scandium (Sc), tibialium (Tb), thionium (Tm), ytterbium (Yb), or yttrium (Y); hafnium (Hf), zirconium (Zr), aluminum (Al), silicon (Si), their oxides or alloy oxides; hafnium oxide, which is Hf(1-x)E xOy, where E can be Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, Zr, or Y, where x and y are the first and second fractions, respectively; Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)N, or Al(1-xy)Mg(x)Nb(y)N, where x and y are the third and fourth fractions, respectively; HfO2 doped with y. , where y includes one of the following: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn or Y; or niobate-type compounds LiNbO3, LiTaO3, lithium iron tantalum fluoride, barium strontium niobate, sodium barium niobate or potassium strontium niobate; or non-standard ferroelectric materials, including one of the following: [PTO / STO]n or [LAO / STO]n, where "n" is between 1 and 100;Or a paraelectric material comprising SrTiO3, Ba(x)Sr(y)TiO3, HfZrO2, Hf-Si-O, La-substituted PbTiO3, or a PMN-PT-based relaxed ferroelectric; or a paraelectric material comprising SrTiO3, Ba(x)Sr(y)TiO3, HfZrO2, Hf-Si-O, or a PMN-PT-based relaxed ferroelectric.

6. The pricing method for developing a nonlinear polar material process as described in claim 1, wherein the method further comprises: identifying a plurality of batch processes associated with the manufacturing process; determining a base cost for each batch process; calculating a total cost using a computer, which is the sum of the base costs of the respective batch processes; updating the notification displaying the plurality of batch processes and the total cost using the computer; and transmitting the notification electronically to the customer using the computer, wherein the notification includes a list having a second line of items related to the plurality of batch processes and the total cost.

7. The pricing method for developing nonlinear polar material processes as described in claim 6, wherein each batch process shows a wafer being processed by one or more machines, and wherein the batch processes show certain operations performed on the wafer by the one or more machines.

8. The pricing method for developing a process for a nonlinear polar material as described in claim 7, wherein the plurality of operations includes: a first operation causing a first change in the structure of the device having the nonlinear polar material; a second operation causing a second change in the composition of a second material of the device having the nonlinear polar material; a third operation causing a third change in the particle size of a third material of the device having the nonlinear polar material; a fourth operation causing a fourth change in the crystal orientation of a fourth material of the device having the nonlinear polar material; and / or a fifth operation causing a fifth change in the thermodynamics of a fifth material of the device having the nonlinear polar material.

9. A pricing device for developing processes for nonlinear polar materials, the device comprising: Means for obtaining a precursor from a supplier; means for supplying the precursor to a manufacturing process to construct an apparatus having a nonlinear polar material; means for updating a notification using a computer to display a certain quantity of the precursor obtained and supplied; means for electronically transmitting the notification to a customer using a computer, wherein the notification includes a list having a first line of items associated with the cost of the quantity of the precursor and the supply of the precursor; means for updating the notification and generating an updated notification using a computer after completing an iteration of the acquisition and supply of the precursor; and means for electronically transmitting the updated notification to the customer using a computer to provide a process-initiated list for the manufacturing process constructing the apparatus having the nonlinear polar material, including providing cost-perceived visibility of the process-initiated list to the manufacturing process.

10. The pricing apparatus for developing nonlinear polar material processes as described in claim 9, wherein the precursor comprises one or more of the following: trimethylsilane (3MS) gas, tetramethylsilane (4MS), hexachlorosilane (HCDS), tetraethylsiloxane, tris(dimethylamino)silane, tris(trimethylgermanium)arsine, tetradimethylaminotitanium, chemicals from Group III / V and II / VI, trimethylgallium, triethylgallium, trimethylindium, trimethylaluminum, tert-butylarsine, tert-butylphosphine, dimethylhydrazine, tetrabromomethane, diethyl telluride, two-dimensional (2D) materials, hexacarbonylmolybdenum (Mo(CO)6), hexacarbonylmolybdenum ... Carbonyl tungsten (W(CO)6), diisopropyl selenide (DiPSe), bistert-butyliminobisdimethylaminowolframvi (BTMW), bis(tert-butylimino)bis(dimethylamido)molybdenum (BTMMo), diethyl telluride (DETe), methylallyl telluride (MATe), tris(cyclopentadienyl)scandium (Cp3Sc) and / or trimethylmethylcyclopentadienylplatinum (MeCpPtMe3).

11. The pricing equipment for developing processes for nonlinear polar materials as described in claim 9, wherein the means of obtaining the precursor is based on human expertise.

12. The pricing equipment for developing processes for nonlinear polar materials as described in claim 9, wherein the list is one of the following: sales invoices, estimated costs, royalty payments, equity capital, or cost-plus estimates.

13. The pricing apparatus for developing processes for nonlinear polar materials as described in claim 9, wherein the nonlinear polar material is one of the following: perovskite materials, including one of BaTiO3, PbTiO3, KNbO3 or NaTaO3; bismuth ferrite (BFO); barium titanate (BTO); BFO doped with one of the following: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu or Zn; BTO doped with one of the following: Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu or Zn; LBFO doped with Mn; lead zirconate titanate (PZT), or PZT having a first dopant material, wherein the first dopant material is one of La, Nb, Mn or 5d series elements; Bismuth ferrite (BFO) having a second doping material, wherein the second doping material is one of lanthanum, an element from the lanthanide series of the periodic table, or an element from the 3d, 4d, 5d, 6d, 4f, and 5f series of the periodic table; a relaxed ferroelectric material, including one of lead magnesium niobate (PMN), lead magnesium niobate-lead titanate (PMN-PT), lead lead zirconate titanate-lanthanum (PLZT), lead scandium niobate (PSN), barium titanium-bismuth zinc niobium tantalum (BT-BZNT), or barium titanium-titanium strontium barium (BT-BST); a hexagonal ferroelectric, including one of the following: YMnO3 or LuFeO3; an h-RMnO3 type hexagonal ferroelectric, wherein R is a rare earth element, including one of the following: Cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), thorium (Gd), holmium (Ho), lanthanum (La), argonium (Lu), neodymium (Nd), pterium (Pr), pyroxene (Pm), samarium (Sm), scandium (Sc), tibialium (Tb), thionium (Tm), ytterbium (Yb), or yttrium (Y); hafnium (Hf), zirconium (Zr), aluminum (Al), silicon (Si), their oxides or alloy oxides thereof; hafnium oxide, wherein Hf(1-x)ExOy, wherein E can be Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, Zr, or Y, where x and y are the first and second fractions, respectively; Al(1-x)Sc(x)N, Ga(1-x)Sc(x)N, Al(1-x)Y(x)N, or Al(1-xy)Mg(x)Nb(y)N, where x and y are the third and fourth fractions, respectively; HfO2 doped with y, where y includes one of the following: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y; or niobate-type compounds LiNbO3, LiTaO3, lithium iron tantalum fluoride, barium strontium niobate, sodium barium niobate, or potassium strontium niobate; or non-standard ferroelectric materials, including one of the following: [PTO / STO]n or [LAO / STO]n, where "n" is between 1 and 100;Or a paraelectric material comprising SrTiO3, Ba(x)Sr(y)TiO3, HfZrO2, Hf-Si-O, La-substituted PbTiO3, or a PMN-PT-based relaxed ferroelectric; or a paraelectric material comprising SrTiO3, Ba(x)Sr(y)TiO3, HfZrO2, Hf-Si-O, or a PMN-PT-based relaxed ferroelectric.

14. The pricing apparatus for developing processes for nonlinear polar materials as described in claim 9, further comprising: Means for determining the batch processes associated with the manufacturing process; means for determining the basic cost for each batch process; The means of using the computer to calculate the total cost, which is the sum of the basic costs of the individual batch processes; the means of using the computer to update the notification displaying the batch processes and the total cost; and the means of using the computer to electronically transmit the notification to the customer, wherein the notification includes a list having a second line of items associated with the batch processes and the total cost.

15. A pricing method for developing processes for nonlinear polar materials, the method comprising: Obtain a precursor; supply the precursor to a manufacturing process to construct a device having ferroelectric materials; The computer is used to update and display a notification of the acquisition and supply of a certain quantity of the precursor; and the computer is used to electronically transmit the notification to a customer, wherein the notification includes a list with a first line of items associated with the cost and supply of the quantity of the precursor; after completing one iteration of the acquisition and supply of the precursor, the computer is used to update the notification and generate an updated notification; and the computer is used to electronically transmit the updated notification to the customer to provide an in-process inventory for the manufacturing process of constructing the device having the ferroelectric material, including the in-process inventory of the inventory providing cost-perceived visibility of the manufacturing process.

16. The pricing method for developing nonlinear polar material processes as described in claim 15, wherein the precursor comprises one or more of the following: trimethylsilane (3MS) gas, tetramethylsilane (4MS), hexachlorosilane (HCDS), tetraethylsiloxane, tris(dimethylamino)silane, tris(trimethylgermanium)arsine, tetradimethylaminotitanium, chemicals from Group III / V and Group II / VI, trimethylgallium, triethylgallium, trimethylindium, trimethylaluminum, tert-butylarsine, tert-butylphosphine, dimethylhydrazine, tetrabromomethane, diethyl telluride, two-dimensional (2D) materials, molybdenum hexacarbonyl (Mo(CO)6), Tungsten hexacarbonyl (W(CO)6), diisopropyl selenide (DiPSe), bistert-butyliminobisdimethylaminowolframvi (BTMW), bis(tert-butylimido)bis(dimethylamido)molybdenum (BTMMo), diethyl telluride (DETe), methylallyl telluride (MATe), tris(cyclopentadienyl)scandium (Cp3Sc) and / or trimethylmethylcyclopentadienylplatinum (MeCpPtMe3).

17. The pricing method for developing processes for nonlinear polar materials as described in claim 15, wherein the precursor system is obtained based on human expertise.

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