Method and system for defect review of samples with un-patterned surface

TWI941060BActive Publication Date: 2026-10-01CARL ZEISS SMT GMBH
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Patent Information

Application Number
TW114104409
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Priority Date
2024-02-07
Filing Date
2025-02-06
Publication Date
2026-10-01
Estimated Expiration
2045-02-05

AI Technical Summary

Technical Problem

Existing methods for defect inspection on unpatterned semiconductor wafers are time-consuming and lack accuracy, especially when dealing with a large number of anomalies, making it difficult to efficiently locate and examine defects on unpatterned substrate surfaces.

Method used

A method that registers the unpatterned surface of a substrate with previously detected anomalies, aligns them within the object field of a charged particle microscope, and uses high-resolution imaging to quickly locate and inspect multiple defects by refining the inspection coordinate system through a series of search paths and image processing techniques, including FIB milling for buried anomalies.

Benefits of technology

Enables high-throughput defect inspection on unpatterned substrate surfaces by accurately locating and examining a large number of anomalies, improving inspection speed and efficiency.

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Patent Text Reader

Abstract

This invention provides a method for inspecting a plurality of anomalies on an unpatterned surface of a sample. The method includes registering the coordinate system of the unpatterned surface of the sample to the locations of the plurality of anomalies.
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Citation Information

Patent Citations

  • Method for determining a distortion-corrected position of a feature in an image imaged with a multi-beam charged particle microscope, corresponding computer program product and multi-beam charged particle microscope

    TW202347392A

  • System and method for bare wafer inspection

    US11087954B2

  • Pattern inspection apparatus and pattern inspection method

    US20190346769A1

  • Use of fiducial marks for improved blank wafer defect review

    US5847821A