Balanced photodetector device having radio frequency bandwidth extension circuitry cascade

Abstract

The balanced photodetector element includes: a first photodetector and a second photodetector arranged in a balanced configuration and coupled to each other at a differential node, the differential node being configured to provide a differential output; and an RF bandwidth extension circuit coupled to the differential node and configured to output a net differential output at a net differential output node based on the differential output.

Claims

1. A balanced photoelectric detector element, including: A first photodetector and a second photodetector are arranged in a balanced configuration and coupled to each other at a differential node configured to provide differential output; And an RF bandwidth extension charging circuit, coupled to the differential node and configured to output a net differential output at the net differential output node based on the differential output.

2. The balanced photodetector element as claimed in claim 1, wherein the radio frequency bandwidth expansion circuit comprises at most one of the group consisting of an inductor, a resistor, and a capacitor.

3. The balanced photodetector element as claimed in claim 1, wherein the radio frequency bandwidth expansion circuit comprises at least two of the group consisting of an inductor, a resistor, and a capacitor.

4. The balanced photodetector element as described in any one of claims 1 to 3, wherein each of the first photodetector and the second photodetector comprises: Light-absorbing semiconductor region; p+ doped semiconductor region; n++ doped semiconductor region; p++ doped semiconductor region; An electrode, having an electrode tip; Top cover; Bottom covering; Semiconductor substrate; A DC bias electrode has a DC bias electrode end; wherein the light-absorbing semiconductor region interconnects the p+ doped semiconductor region and the n++ doped semiconductor region, wherein the p++ doped semiconductor region interconnects the p+ doped semiconductor region and the DC bias electrode, wherein the upper cladding is connected to the light-absorbing semiconductor region, the p+ doped semiconductor region, and the n++ doped semiconductor region, wherein the bottom cladding is connected to the p+ doped semiconductor region and the p++ doped semiconductor region, wherein the semiconductor substrate is connected to the bottom cladding, wherein the electrode is connected to the n++ doped semiconductor region, and wherein the differential node is connected to the electrode end of the first photodetector and the DC bias electrode end of the second photodetector.

5. The balanced photodetector element as claimed in any one of claims 1 to 3, wherein each of the first photodetector and the second photodetector comprises: Light-absorbing semiconductor region; p+ doped semiconductor region; n+ doped semiconductor region; p++ doped semiconductor region; n++ doped second semiconductor region; Multiple electrodes, each with an electrode end; top coating; bottom coating; A semiconductor substrate; an intrinsic semiconductor region; wherein the light-absorbing semiconductor region interconnects the p+-doped semiconductor region and the n+-doped semiconductor region, wherein the p++-doped semiconductor region interconnects the p+-doped semiconductor region and the electrode, wherein the n++-doped second semiconductor region interconnects the n+-doped semiconductor region and the electrode, wherein the intrinsic semiconductor region interconnects the light-absorbing semiconductor region and the p+-doped semiconductor region, wherein the upper cladding is connected to the light-absorbing semiconductor region, wherein the bottom cladding is connected to the p+-doped semiconductor region, the n+-doped semiconductor region, the p++-doped semiconductor region, and the n++-doped semiconductor region, wherein the semiconductor substrate is connected to the bottom cladding, and wherein the differential node is connected to the electrode ends of the first photodetector and the second photodetector.

6. The balanced photodetector element as described in any one of claims 1 to 3, wherein the first photodetector, the second photodetector, and the radio frequency bandwidth expansion circuit are monolithic.

7. The balanced photodetector element as claimed in claim 2 or claim 3, wherein the resistor includes a resistive element and a plurality of electrodes, wherein the resistive element interconnects the electrodes, wherein the resistive element is embedded in a cladding layer, and wherein the electrodes are arranged on the cladding layer and extend into the cladding layer.

8. The balanced photodetector element as claimed in claim 2 or claim 3, wherein the inductor includes a first coil, a second coil, and a third coil interconnected, wherein the first coil and the third coil are arranged on and extend into the cladding layer, and wherein the second coil is embedded within the cladding layer.

9. The balanced photodetector element as claimed in claim 2 or claim 3, wherein the capacitor is an interdigitated structure comprising a first capacitor plate having first periodic fingers, a second capacitor plate having second periodic fingers, and a dielectric material inserted between the first periodic fingers and the second periodic fingers as a cladding layer, wherein the first capacitor plate and the second capacitor plate are arranged on the cladding layer, extending into and embedded within the cladding layer.

10. The balanced photodetector element as claimed in claim 2 or claim 3, wherein the capacitor is a parallel plate structure including a first electrode plate, a second electrode plate parallel to the first electrode plate, and a dielectric material inserted between the two as a cladding layer, wherein the first electrode plate and the second electrode plate are arranged on the cladding layer, extending into and embedded within the cladding layer.

11. The balanced photodetector element as claimed in any one of claims 1 to 3, wherein the radio frequency bandwidth expansion circuit includes a resonant circuit.

12. The balanced photodetector element as claimed in claim 1, wherein the radio frequency bandwidth extension circuit includes: At least one first resistor, at least one first inductor coupled in series with the first resistor, and at least one first capacitor coupled in series with the first inductor, wherein the net differential output node is coupled to the first inductor and the first capacitor.

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