Substrate supporting module and substrate processing apparatus

Abstract

The present invention relates to a substrate support for depositing thin films on a substrate, comprising: a substrate support portion having a plurality of recessed pocket portions formed thereon for mounting the substrate in a circumferential direction thereon, and a drive gas supply portion for supplying drive gas to the upper part of the pocket portions; and satellites having substrate mounting portions formed thereon for mounting the substrate, and being disposed in each pocket portion, rotating and floating within the pocket portions based on the drive gas, wherein at least a portion of the satellites forms a hollow portion.

Description

Technical Field

[0001] The present invention relates to a substrate support and a substrate processing apparatus, and more specifically, to a substrate support and a substrate processing apparatus for depositing thin films on a substrate. Prior Technology

[0002] Generally, various processes are performed in a substrate processing apparatus that includes a process chamber containing a vacuum environment in order to manufacture semiconductor devices, display devices, or solar cells. For example, processes such as loading a substrate in the process chamber and depositing or etching a thin film on the substrate can be performed. In this process chamber, the substrate is supported by a substrate support, and process gases can be sprayed onto the substrate through a nozzle disposed on the upper part of the substrate support opposite to the substrate support.

[0003] In order to uniformly form a thin film on the substrate, not only does the base on which the substrate is placed need to be able to rotate, but the substrate itself also needs to rotate. That is, the substrate rotates during the period of exposure to the reactive gas to form a substantially uniform thin film. For this purpose, in the substrate processing apparatus, a satellite that can support the substrate is placed in the bag groove, and the substrate is rotated together with the satellite.

[0004] However, in this conventional substrate processing apparatus, deviations in the rotation speed of the satellite may occur in each bag slot. Due to the low rotational stability based on the satellite's weight, it is difficult to stably control the satellite's rotation. The lower rotation speed due to the satellite's weight results in a slower overall process speed.

[0005] Furthermore, as the process temperature increases, the temperature of the substrate support and the satellite also increases. Since the structure of the substrate support that rotates the satellite will cause temperature deviation of the satellite, the temperature distribution of the substrate is uneven, resulting in the problem of uneven deposition. Summary of the Invention

[0006] The technical problems to be solved This invention addresses a variety of problems, including those described above, and aims to provide a substrate support frame and substrate processing apparatus that reduce the weight of satellites, increase the rotational speed, and ensure uniform temperature distribution in satellites during high-temperature processes. However, these problems are merely exemplary, and the scope of this invention is not limited thereto.

[0007] Problem-solving methods According to one embodiment of the present invention, a substrate support frame is provided. The substrate support frame includes: a substrate support portion having a plurality of recessed pocket portions formed thereon for mounting a substrate in a circumferential direction on the surface of the substrate, and a driving gas supply portion for supplying driving gas to the surface of the pocket portions; and a satellite having a substrate mounting portion formed thereon for mounting the substrate, and being disposed in each pocket portion, rotating and floating within the pocket portions based on the driving gas, wherein at least a portion of the satellite forms a hollow portion.

[0008] According to one embodiment of the present invention, an annular groove is formed on the bottom surface of the pocket groove of the substrate support for inserting a portion of the lifting portion that raises and lowers the substrate, and a pin hole is formed on the satellite for inserting another portion of the lifting portion. The hollow portion is formed in the outer region of the pin hole with the center of the satellite as a reference.

[0009] According to one embodiment of the present invention, a plurality of hollow portions in the shape of columns are formed inside the satellite, and the plurality of hollow portions are formed radially with respect to the center of rotation, and are point-symmetric with respect to the center of rotation.

[0010] According to one embodiment of the present invention, the satellite is formed by an inner region (i.e., a first region) and an outer region (i.e., a second region) on a line connecting locations separated by a predetermined distance from its center of rotation, and the hollow portion is formed such that the density of the satellite in the first region is greater than the density of the satellite in the second region.

[0011] According to one embodiment of the present invention, the satellite is composed of a region (i.e., the first-2 region) of the annular groove portion formed by an annular groove on the bottom surface of the bag groove portion in the substrate support portion, an inner region of the first-2 region surrounded by the first-2 region (i.e., the first-1 region), and an outer region of the first-2 region surrounding the first-2 region (i.e., the second region). In the first-1 region, the first-2 region, and the second region, the hollow portion is formed to the maximum extent in the first-2 region with the density of the satellite.

[0012] According to one embodiment of the present invention, the satellite forms the hollow portion in the first-1 region, the first-2 region, and the second region.

[0013] According to one embodiment of the present invention, in at least a portion of the second region, the height of the hollow portion of the satellite gradually decreases towards the first-second region.

[0014] According to one embodiment of the present invention, in at least a portion of the first-1 region, the height of the hollow portion of the satellite gradually decreases towards the first-2 region.

[0015] According to one embodiment of the present invention, the satellite has a groove-shaped protrusion at its rotation center below it, and in at least a portion of the first-1 region, the height of the hollow portion gradually decreases toward the protrusion.

[0016] According to one embodiment of the present invention, in at least a portion of the second region, the number of hollow portions of the satellite gradually decreases towards the first-second region, based on the same area.

[0017] According to one embodiment of the present invention, in at least a portion of the second region of the satellite, the size of the hollow portion gradually decreases towards the first-second region, based on the same area.

[0018] According to one embodiment of the present invention, a substrate processing apparatus is provided. The substrate processing apparatus includes: a process chamber forming a processing space capable of processing a substrate; a substrate support frame located in the processing space of the process chamber to support the substrate, and rotatable about the central axis of the process chamber; and a gas injection unit located above the process chamber opposite to the substrate support frame to inject processing gas into the substrate support frame.

[0019] The Effects of Invention According to the substrate processing apparatus of one embodiment of the present invention as described above, the weight of the satellite can be reduced and the rotational stability can be improved, thereby enabling stable control of the satellite's rotation and reducing the deviation of the satellite's rotational speed in each pocket section.

[0020] Furthermore, the lightweight design of the satellite allows for increased rotation speed, which in turn increases overall process speed and yield.

[0021] Furthermore, the high-temperature process ensures uniform temperature distribution in the satellite, which in turn results in uniform temperature distribution on the substrate. Therefore, a substrate support frame and substrate processing apparatus are presented that improve substrate processing quality. Of course, the scope of this invention is not limited to these effects. Simple Explanation of the Diagram

[0022] Figure 1 is a schematic cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention; [] Figure 2 is a perspective view schematically showing the substrate support portion of the substrate processing apparatus of Figure 1; Figure 3 is a cross-sectional view showing a satellite mounted on a pocket groove portion of a substrate support portion according to an embodiment of the present invention; Figure 4 is a perspective view of a satellite according to an embodiment of the present invention; Figure 5 is a top view of a satellite according to an embodiment of the present invention; Figure 6 is a cross-sectional view showing the B-B' section of the satellite in Figure 5; and Figure 7 is a temperature distribution table showing the simulated temperature distribution of the substrate support portion of a satellite based on conventional technology and a satellite based on the present invention. Implementation

[0023] The following describes several preferred embodiments of the present invention in detail with reference to the accompanying drawings.

[0024] These embodiments of the present invention are provided to illustrate the invention more fully to those skilled in the art, and various modifications can be made to the following embodiments. The scope of the invention is not limited to the following embodiments. Rather, these embodiments are provided to make the present invention more complete and to fully convey the spirit of the invention to those skilled in the art. In addition, for ease of explanation and clarity, the thickness or size of each layer is exaggerated in the accompanying drawings.

[0025] Hereinafter, a plurality of embodiments of the present invention will be described with reference to the accompanying drawings, which schematically illustrate preferred embodiments of the invention. In the drawings, for example, variations in the shape shown can be anticipated depending on manufacturing techniques and / or tolerances. Therefore, embodiments of the inventive concept should not be construed as limited to specific shapes within the areas shown in this specification, but should include, for example, variations in shape caused by manufacturing processes.

[0026] FIG1 is a schematic cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention; FIG2 is a schematic perspective view showing a substrate support portion 200 of the substrate processing apparatus of FIG1; FIG3 is a cross-sectional view showing a satellite 300 mounted on a pocket groove portion 210 of a substrate support portion 200 according to an embodiment of the present invention; FIG4 is a perspective view showing the satellite 300; FIG5 is a top view showing the satellite 300; and FIG6 is a cross-sectional view showing the B-B' section of the satellite 300 of FIG5.

[0027] First, as shown in FIG1, a substrate support frame 2000 according to an embodiment of the present invention generally includes: a substrate support portion 200 and a satellite 300.

[0028] As shown in Figures 1 and 2, a plurality of pocket grooves 210 are recessed on the upper surface of the substrate support 200, so that the substrate S is disposed on the upper surface of the pocket grooves 210 along the circumferential direction, and a driving gas supply section is formed to supply driving gas to the upper surface of the pocket grooves 210.

[0029] The substrate support 200 is formed in the shape of a disk and is disposed in the processing space A of the process chamber 1000. At least one substrate S is placed on the upper part to form a driving gas supply section for upward gas injection.

[0030] The substrate support 200 is rotatable about the central axis of the process chamber 1000. For example, the substrate support 200 may be a substrate support structure including a base or table that can support the substrate S.

[0031] At least one pocket groove 210 is recessed on the upper surface of the substrate support portion 200, so that at least one substrate S can be placed thereon, or a pocket forming plate for forming the pocket groove 210 is provided on the upper part of the substrate support portion 200.

[0032] The pocket groove 210 is recessed from the top of the substrate support 200, and is able to accommodate the satellite 300.

[0033] With the rotation axis of the substrate support 200 as the center, at least one pocket groove 210 is provided at equal angles along the outer peripheral surface of the substrate support 200.

[0034] A plurality of pocket groove portions 210 are arranged in a circular pattern at the same angle, spaced apart from the center point of the substrate support portion 200 and with the rotation axis as a reference. For example, as shown in FIG2, six pocket groove portions 210 are formed at 60 degrees, 120 degrees, 180 degrees, 240 degrees, 300 degrees, and 360 degrees, spaced at the same distance from the center of the substrate support portion 200. In addition, a plurality of pocket groove portions 210, each containing a plurality of pocket grooves, are formed on the substrate support portion 200.

[0035] The substrate support 200 may include: a substrate support structure for mounting the substrate S, and a shaft 220 that is coupled to the substrate support structure and to the process chamber 1000, enabling lifting and rotation operations. For example, the substrate support 200 may be rotatably disposed in the processing space A to be coupled to the substrate support. It rotates around the center of the lower shaft 220 (i.e., the rotation axis).

[0036] Specifically, shaft 220 has a central axis that coincides with the rotation axis at the lower part of substrate support 200, thereby supporting substrate support 200, and the power transmitted from the drive motor causes substrate support 200 to rotate.

[0037] On the upper surface of the substrate support 200, a plurality of bag grooves 210 are arranged radially at equal angles with the rotation axis as the center, thereby enabling the substrate S to be processed at one time. A gas flow path is formed on the inner side of the substrate support 200 to allow gas to flow.

[0038] The substrate support 200 allows gas to flow to the rotation mode 211 through the gas flow path, thereby applying pressure to make the satellite 300 float or rotational force to make it rotate.

[0039] The gas is a gas that flows through the gas flow path and is injected from the substrate support 200 to provide pressure that causes the satellite 300 to float or rotate. It is different from the reactive gas that is injected into the processing space A for the processing of the substrate S, and may include inert gases such as nitrogen.

[0040] According to some embodiments, the substrate support portion 200 includes a rotating protrusion 214 formed in a cylindrical shape, thereby fixing the position of the satellite 300 at the center of the pocket groove portion 210.

[0041] A rotating protrusion 214 is formed by protruding from the center of the bottom of the bag groove portion 210 in the shape of a cylinder.

[0042] The lower region of the rotating protrusion 214 is inserted into a groove formed at the bottom of the bag groove 210, and the upper region is inserted into the protruding groove 330 formed in the shape of a groove under the satellite 300.

[0043] Alternatively, the rotating protrusion 214 is integrally formed on the substrate support portion 200, extending from the pocket groove portion. 210 is prominent and thus formed.

[0044] The rotating protrusion 214 is inserted into the protrusion groove 330 of the satellite 300, and is formed to a sufficient length so that it can be inserted into the protrusion groove 330 even when the satellite 300 is floating. Accordingly, the satellite 300 rotates around the rotating protrusion 214, and the rotation of the satellite 300 can be stably achieved.

[0045] According to some embodiments, the bottom surface of the pocket groove portion 210 of the substrate support portion 200 forms an annular groove portion 213, into which a portion of the lifting portion 400 that raises and lowers the substrate can be inserted.

[0046] Specifically, an annular groove 213 is formed in the pocket groove 210 of the substrate support 200, and at least one through hole capable of penetrating the substrate support 200 is formed on the bottom surface of the annular groove 213. The lifting portion... The lower pin 410 of 400 is located in a through hole formed in a portion of the annular groove 213 and moves up and down relative to the substrate support 200.

[0047] The annular groove 213 is continuously formed along the rotational trajectory of the upper pin 430, thereby enabling the satellite... When the lifting part 400 rotates, the lifting ring 420 of the lifting part 400 can rotate within the annular groove 213. For example, the annular groove 213 is formed in a shape that surrounds the center of the pocket groove 210 of the substrate support part 200.

[0048] Therefore, when the satellite 300 rotates, even if the upper pin 430 of the lifting part 400 floats up to a height lower than the pocket groove 210 of the base plate support part 200, the upper pin 430 can still rotate within the annular groove 213.

[0049] The lifting unit 400 receives the substrate S from the outside and loads it onto the satellite 300, or supports the substrate S in order to transfer the substrate S from the satellite 300 to the outside.

[0050] The lifting part 400 may include: an upper pin 430, a lifting ring 420, and a lower pin 410.

[0051] As shown in Figure 3, the upper pin 430 passes through the satellite 300 and moves up and down relative to the satellite 300 to load or unload the substrate S onto the satellite 300. Furthermore, when the substrate S is placed on the satellite 300, the upper pin 430 engages with the satellite 300 and moves up, down, or rotates together with the satellite 300.

[0052] The lifting ring 420 moves up and down relative to the substrate support 200, and can support the upper pin 430 when loading or unloading the substrate S.

[0053] The lifting ring 420 moves up and down relative to the base plate support 200 within the ring groove 213.

[0054] The lifting ring 420 is formed in a shape corresponding to the ring groove 213. For example, the lifting ring 420 is formed in a circular shape so that the lifting part 400 can be supported no matter where the lifting part 400 and the satellite 300 stop after rotation.

[0055] For example, the lifting ring 420 is formed in a ring shape, surrounding the center of the pocket groove portion 210 of the substrate support portion 200. More specifically, the ring groove portion 213 and the lifting ring 420 can be circular rings, and in a variation of this embodiment, they can be polygonal rings.

[0056] The lower pin 410 contacts the lifting ring 420 and can pass through the base plate support 200 to move up and down. The number of lower pins 410 can be appropriately selected.

[0057] When loading or unloading the substrate S, the upper pin 430 of the lifting section 400 is positioned relatively higher than the satellite 300, thereby allowing a robot (not shown in the figures) for transferring the substrate S to move between the substrate S and the satellite 300. For example, the robot can place the substrate S on the lifting section 400 or remove the substrate S from the lifting section 400.

[0058] As shown in Figures 1 and 2, regarding the satellite 300, a substrate mounting portion 310 for mounting the substrate S is formed on it, and it is disposed in each bag slot portion 210, rotating and floating within the bag slot portion 210 based on the driving gas.

[0059] Satellite 300 can be a disc shape that is disposed on the upper part of substrate support 200 and placed inside bag groove 210.

[0060] The satellite 300 forms a plurality of pockets 210 corresponding to the plurality of pockets formed on the upper part of the substrate support 200, and is provided in each pocket 210.

[0061] Each satellite 300 has a substrate mounting portion formed by a groove for mounting substrate S on its upper surface, and a plurality of substrates S can be mounted on each satellite 300.

[0062] Satellite 300 rotates in a floating state based on the pressure of the gas flowing through the rotation mode section 211, thereby rotating relative to the substrate support section 200.

[0063] Alternatively, satellite 300 rotates relative to substrate support 200 based on rotating gas supplied from substrate support 200. This rotation enables substrate S to rotate because the rotation relative to substrate support 200 can be referred to as rotation.

[0064] A pin hole 320 for inserting another part of the lifting part 400 can be formed on the satellite 300.

[0065] Specifically, at least a portion of the satellite 300 forms a pin hole 320 for inserting the upper pin 430.

[0066] The pin hole 320 is formed through the satellite 300, for example, through the substrate mounting portion 310 of the satellite 300.

[0067] Regarding the pin hole portion 320, the upper pin 430 inserted into the pin hole portion 320 can be raised or lowered to load or unload the substrate S. At least three pin holes 320 are formed on the satellite 300, such that at least three upper pins 430 are inserted into the satellite 300, so that the substrate S can be raised or lowered stably.

[0068] Multiple columnar hollow sections 340 are formed inside the satellite 300.

[0069] For example, satellite 300 is formed in the shape of a cylindrical cylinder, and a hollow section 340 with an empty interior is formed in the overall structure of the satellite. Accordingly, the weight of satellite 300 can be reduced, and the rotational force caused by the gas flowing in the lower part of satellite 300 can be further increased.

[0070] The hollow section 340 is formed in the outer region of the pin hole section 320 with reference to the rotation center C of the satellite 300.

[0071] The hollow section 340 is formed radially at equal angles, thereby enabling the satellite 300 to rotate smoothly. Specifically, the plurality of hollow sections 340 in the satellite 300 are formed radially with respect to the rotation center C, and are point-symmetric with respect to the rotation center C.

[0072] Accordingly, the rotation center C in satellite 300 becomes the weight center, and no vibration or tremor will occur in the bag groove 210 when satellite 300 rotates.

[0073] Regarding satellite 300, based on the altitude, size, and number of the hollow section 340, in the satellite... The density also varies within the 300.

[0074] According to some embodiments, satellite 300 is formed by an inner region (i.e., a first region D1) and an outer region (i.e., a second region D2) on a line connecting locations separated by a predetermined distance from the rotation center C.

[0075] The first region D1 corresponds to the region from the rotation center C of the satellite 300 to the annular groove 213 formed in the bag groove 210, that is, the region including the region formed by the pin hole 320 of the satellite 300.

[0076] The second region D2 is the region that includes the area from the outer side of the pin hole portion 320 forming area of ​​satellite 300 to the outer contour area of ​​satellite 300.

[0077] Regarding satellite 300, hollow portions 340 are formed with a density greater in the first region D1 than in the second region D2. For example, the number of hollow portions 340 in the first region D1 is greater than the number of hollow portions 340 in the second region D2, indicating a higher density of satellite 300 in the first region D1. The comparison of the number of hollow portions 340 in each region is based on the number of hollow portions 340 formed within the same area.

[0078] Alternatively, the altitude H of the hollow portion 340 in region D1 is less than the altitude H of the hollow portion 340 in region D2, and the density of satellites 300 is greater in region D1. The altitude H of the hollow portion 340 varies across regions, and the altitude comparisons between regions are based on the average values ​​for each region.

[0079] Alternatively, the size of the hollow portion 340 in the first region D1 is smaller than the size of the hollow portion 340 in the second region D2, and the density of satellites 300 is greater in the first region D1. The hollow portions of each region... The size comparison of 340 is based on the size of the hollow portion 340 formed in the same area.

[0080] Density is the mass per unit volume. In this invention, the density of satellite 300 is the ratio of the mass of satellite 300 per unit volume. The higher the density of satellite 300, the greater its weight.

[0081] According to some embodiments, the satellite 300 is composed of a region (i.e., the first-2 region D1-2) of the annular groove portion 213 formed by an annular groove on the bottom surface of the bag groove portion 210 in the substrate support portion 200, an inner region (i.e., the first-1 region D1-1) of the first-2 region D1-2 surrounded by the first-2 region D1-2, and an outer region (i.e., the second region D2) of the first-2 region D1-2 surrounding the first-2 region D1-2.

[0082] Region 1-1, D1-1, may include the area from the rotation center C of satellite 300 to the slot section. The region up to the area of ​​the annular groove 213 formed on 210. For example, if the pin hole 320 formed on satellite 300 is formed at the position corresponding to the annular groove 213, the first region D1-1 may include the region up to the area of ​​the pin hole 320.

[0083] Region D1-2 can be the region in satellite 300 corresponding to the annular groove 213 formed in the bag groove 210, that is, it can be the region formed in the pin hole 320 of satellite 300.

[0084] The second region D2 may include the region extending from the outer part of the region formed in the pin hole portion 320 of the satellite 300 to the outer contour region of the satellite 300.

[0085] Regarding satellite 300, among region 1-1 D1-1, region 1-2 D1-2, and region 2 D2, the hollow portion 340 is formed with the highest density in region 1-2 D1-2. For example, the number of hollow portions 340 in region 1-2 D1-2 is less than the number of hollow portions 340 in both region 1-1 D1-1 and region 2 D2. The density of 300 is the highest in region D1-2.

[0086] Alternatively, the altitude H of the hollow portion 340 in region 1-1 (D1-1) and region 2 (D2) is greater than the altitude H of the hollow portion 340 in region 1-2 (D1-2), and the density of satellites 300 is lower in regions 1-1 (D1-1) and 2 (D2). The altitude H of the hollow portion 340 varies across regions, and the altitude comparisons between regions are based on the average values ​​of those regions.

[0087] Alternatively, the size of the hollow portion 340 in region 1-1 D1-1 and region 2 D2 is larger than the size of the hollow portion 340 in region 1-2 D1-2, and the density of satellite 300 is smaller in region 1-1 D1-1 and region 2 D2. The size comparison of the hollow portion 340 in each region is based on the size of the hollow portion 340 formed on the same area.

[0088] Satellite 300 may form hollow portions in regions D1-1 and D2 of regions D1-1, D1-2, and D2. Specifically, region D1-2, which forms the pin hole portion 320, is formed by a solid region and does not form a hollow portion 340.

[0089] Accordingly, the center of gravity of the satellite 300 is formed on the inner side, and no vibration or tremor will occur in the bag groove 210 when the satellite 300 rotates.

[0090] Furthermore, the density of satellite 300 in region D1-1 and region D2 is less than that in region D1-1. Region 1-2 D1-2 reduces the thermal conductivity in region 1-1 D1-1 and region 2 D2, thereby reducing the temperature of satellite 300 in region 1-1 D1-1 and region 2 D2, and maintaining a uniform temperature distribution with region 1-2 D1-2 that is heated by the annular groove 213 of bag groove 210.

[0091] Inside the satellite 300, the formation of the hollow portion 340 is controlled according to the temperature profile of the substrate S; that is, the volume inside the satellite 300 is controlled by design, and the number of solid regions or hollow portions 340 of the satellite 300 is controlled, so as to control the thermal conductivity of the substrate S.

[0092] According to some embodiments, the satellite 300 is formed as at least a part of the second region D2, and the height H of the hollow portion 340 gradually decreases towards the first-second region D1-2. For example, as shown in FIG6, the height H of the hollow portion 340 in the second region D2 is uniformly formed in a specified area and gradually decreases from the specified interval towards the rotation center C of the satellite.

[0093] In at least a portion of region D1-1 of satellite 300, the altitude H of the hollow section 340 gradually decreases towards region D1-2. For example, as shown in Figure 6, in region D1-1, the hollow section... The height H of 340 gradually decreases towards region D1-2.

[0094] Accordingly, by adjusting the height H of the hollow section 340 in each region, the temperature deviation of the satellite 300 is controlled by controlling the solid region around the first-second region D1-2, which is included in the first-first region D1-1 and the second region D2.

[0095] In at least a portion of region D1-1, the height of the hollow portion 340 of satellite 300 gradually decreases towards the rotation center C. For example, as shown in Figure 6, satellite 300 forms a groove-shaped protrusion 330 at the lower rotation center C. In region D1-1, the height H of the hollow portion 340 gradually decreases towards the protrusion 330 of satellite 300.

[0096] More specifically, the thermal conductivity of the region forming the spatially defined protruding groove 330 is lower than the thermal conductivity of the surrounding region of the solid-structured protruding groove 330. Therefore, in the protruding groove... The size, height, and number of hollow sections 340 in the surrounding area of ​​330 are controlled to reduce the density of satellites 300, thereby uniformly maintaining the temperature in the area where the protruding grooves 330 are formed and in the surrounding area of ​​the protruding grooves 330.

[0097] Accordingly, in order to prevent the temperature of the center of satellite 300 from rising, a hollow part is formed in region D1-1 of the first-first region. Furthermore, the height H of the hollow part 340 gradually decreases towards the rotation center of satellite 300, thereby increasing the weight in the rotation center of satellite 300 and preventing vibration or tremor of satellite 300.

[0098] According to some embodiments, in at least a portion of the second region D2, the number of hollow portions 340 of the satellite 300 gradually decreases towards the first-second region D1-2, based on the same area. Alternatively, in at least a portion of the second region D2, the size of the hollow portions 340 of the satellite 300 gradually decreases towards the first-second region D1-2, based on the same area.

[0099] Accordingly, by adjusting the number or size of the hollow sections 340 according to the region, in region 1-1 The surrounding solid region of region D1-2, which is included in region D1-1 and the second region D2, controls the satellite. The temperature deviation of 300 causes the number or size of the hollow parts 340 to gradually decrease or shrink towards the rotation center of the satellite 300, thereby increasing the weight at the rotation center of the satellite 300 and preventing the satellite 300 from vibrating or trembling.

[0100] Figure 7 is a temperature distribution table showing the simulated temperature distribution of the substrate support portion of a satellite based on conventional technology and a satellite based on the present invention.

[0101] The conventional satellite 300 is a block-shaped satellite formed of SiC, while the satellite 300 of the present invention is a satellite 300 with a hollow part 340 formed inside as shown in Figure 6.

[0102] In terms of weight, the conventional satellite 300 weighs 1.594 kg, while the satellite 300 of this invention weighs 1.041 kg, a reduction of approximately 34.7%. It can be seen that the weight of the satellite 300 is significantly reduced, and the rotational force caused by the gas flowing in the lower part of the satellite 300 is further increased.

[0103] Furthermore, comparing temperature deviations, based on previous satellite data (e.g., 300), from the formation of the annular groove... The further away from the annular groove 213 the area of ​​213, the greater the temperature deviation. However, according to the satellite 300 of the present invention with the hollow portion 340 formed, the temperature deviation is lower from the area where the annular groove 213 is formed to the area away from the annular groove 213, showing temperature uniformity. That is, a uniform temperature distribution can be maintained in the upper part of the satellite 300, thereby the temperature transferred to the substrate S is uniform throughout the substrate S.

[0104] According to one embodiment of the present invention, a substrate processing apparatus includes a substrate support frame 2000.

[0105] Specifically, as shown in Figure 1, the substrate processing apparatus includes: a process chamber 1000, a substrate support frame 2000, and a gas jetting unit 3000.

[0106] As shown in Figure 1, the process chamber 1000 includes a chamber body 1100 that forms a processing space A capable of processing a substrate S. More specifically, the interior of the chamber body 1100 forms a circular or quadrilateral processing space A, on which processes such as thin film deposition or thin film etching are performed on the substrate S supported by a substrate support frame 2000 disposed in the processing space A.

[0107] The process chamber 1000 can have various shapes, for example, including a chamber body 1100 with an upper opening and a chamber cover 1200 attached to the chamber body 1100. Furthermore, a sealing component for vacuum sealing, such as an O-ring, is attached between the chamber body 1100 and the chamber cover 1200. Also, for the movement of the substrate S, an openable and closable door (not shown in the figures) can be provided on the side wall of the chamber body 1100.

[0108] On the lower side of the chamber body 1100, a plurality of exhaust ports (not shown in the figures) are provided in a shape surrounding the substrate support portion 200. The exhaust ports are connected to a main vacuum pump located outside the process chamber 1000 via exhaust pipes.

[0109] The exhaust port draws in air from the processing space A of the process chamber 1000, and discharges various processing gases from the processing space A or creates a vacuum environment inside the processing space.

[0110] The substrate support frame 2000 is located in the processing space A of the process chamber 1000 and can support the substrate S, and can rotate about the central axis of the process chamber 1000.

[0111] The substrate support frame 2000 may include: a substrate support portion 200 for mounting the substrate S, and a shaft 220 coupled to the substrate support portion 200 and coupled to the process chamber 1000 for lifting and rotating operations. For example, in order to maintain the airtightness of the process chamber 1000 during lifting and / or rotating of the shaft 220, the substrate support frame 2000 is coupled to the process chamber 1000 using a bellows structure (not shown in the figures). Functionally, the substrate support frame 2000 may be referred to as a substrate holder or base.

[0112] A substrate support frame 2000 according to one embodiment of the present invention includes: a substrate support portion 200 and a satellite 300.

[0113] The substrate support 200 is formed in the shape of a disk and is disposed in the processing space of the process chamber 1000. At least one satellite 300 is placed on the upper part, including a plurality of injection holes for injecting gas upward and a gas flow path for gas to flow inside.

[0114] The substrate support portion 200 is disposed in the process chamber 1000 opposite to the gas injection portion 3000. Furthermore, a plurality of pocket slot portions 210 are formed on the substrate support portion 200. For example, the pocket slot portions 210 are formed in a slot shape on the top surface of the substrate support portion 200 for placing the satellite 300. Considering the size of the substrate support portion 200 and the processing speed, the pocket slot portions 210 are formed in an appropriate number.

[0115] According to some embodiments, in order to heat a plurality of substrates S of the substrate support portion 200, a heater portion (not shown in the figures) is provided below the substrate support portion 200 within the process chamber 1000. For example, the heater portion includes at least one heater, which may include various heating sources such as heating wires or cartridge heaters. A plurality of the at least one heater are provided in a plurality of regions.

[0116] Furthermore, the heater section also includes a housing body that surrounds the side portion of the at least one heater within a process chamber 1000 below the base plate, and a quartz plate supported by the housing body.

[0117] The specific structure of the substrate support frame 2000 is as described above.

[0118] The gas injection unit 3000 is located above the process chamber 1000 opposite to the substrate support frame 2000, and injects processing gas through the substrate support frame 2000.

[0119] The gas jetting unit 3000 is located at the center of the upper part of the process chamber 1000 opposite to the substrate support 2000, and jets various processing gases such as process gases and purging gases toward the substrate S on the substrate support 200 of the substrate support 2000.

[0120] Specifically, the gas injection unit 3000 is located in the process chamber 1000 opposite to the substrate support 2000 in order to inject process gas into the process space A. The gas injection unit 3000 can inject process gas supplied from outside the process chamber 1000 into the process space A. For example, the gas injection unit 3000 is provided on the upper part of the process chamber 1000, such as the chamber cover 1200, in order to inject process gas onto the substrate S placed on the substrate support 2000.

[0121] According to the substrate support frame and substrate processing apparatus of the present invention, the weight of the satellite 300 can be reduced and the rotational stability can be improved, thereby enabling stable control of the satellite's rotation and reducing the deviation of the satellite's rotational speed in each pocket section.

[0122] Furthermore, the satellite 300 controls the weight of each region and forms a hollow section 340 with the rotation center C as the weight center. When the satellite 300 rotates, no vibration or tremor will occur in the bag groove section 210.

[0123] Furthermore, through the hollow section 340, even in high-temperature processes, the temperature distribution of the satellite 300 can be made uniform, and the temperature distribution of the substrate can be made uniform, thereby enabling uniform processing of the substrate S.

[0124] The present invention has been described with reference to the embodiments shown in the accompanying drawings, but these are merely exemplary. Those skilled in the art will understand that various variations and equivalent embodiments can be implemented. Therefore, the true scope of protection of the present invention should be determined by the technical concept outlined in the claims.

[0125] 200: Substrate support portion 210: Bag groove section 211: Rotation Mode Section 213: Annular groove section 214: Rotating protrusion 220: Axis 300: Satellite 310: Substrate mounting section 320: Pin hole section 330: Protruding groove 340: Hollow section 400: Improvement Department 410: Lower pin 420: Rings 430: Upper pin 1000: Process Chamber 1100: Main body of the chamber 1200: Chamber cover 2000: Substrate support frame 3000: Gas Injection Section A: Processing space C: Center of Rotation D1: First Area D1-1: Area 1-1 D1-2: Area 1-2 D2: Second Area H: Height S:Substrate

Claims

1. A substrate support frame, comprising: A substrate support portion has a plurality of recessed pockets formed thereon for mounting the substrate in a circumferential direction on the substrate, and a driving gas supply portion for supplying driving gas to the upper part of the pockets; and a satellite has a substrate mounting portion formed thereon for mounting the substrate, and is disposed in each of the pockets, rotating and floating within the pockets based on the driving gas; wherein at least a portion of the satellite forms a hollow portion, the satellite is formed by a first region of an inner region and a second region of an outer region on a line connecting locations spaced apart from its rotation center; and the hollow portion is formed such that the density of the satellite in the first region is greater than the density of the satellite in the second region.

2. The substrate support frame according to claim 1, wherein, The bottom surface of the bag groove portion of the substrate support portion forms an annular groove portion for inserting a portion of the lifting portion that raises and lowers the substrate; a pin hole portion is formed on the satellite for inserting another portion of the lifting portion; and the hollow portion is formed in the outer region of the pin hole portion with reference to the rotation center of the satellite.

3. The substrate support frame according to claim 1, wherein, The satellite has a plurality of hollow sections in the shape of columns formed inside; and a plurality of hollow sections are formed radially with respect to its rotation center, and are point-symmetric with respect to the rotation center.

4. The substrate support frame according to claim 1, wherein, The satellite is composed of a region (i.e., region 1-2) of an annular groove formed by an annular groove on the bottom surface of the bag groove in the substrate support portion, an inner region of region 1-2 surrounded by region 1-2 (i.e., region 1-1), and an outer region of region 1-2 surrounding region 1-2 (i.e., region 2); and the hollow portion is formed in region 1-2 to the maximum extent in region 1-1, region 1-2, and region 2, with the density of the satellite.

5. The substrate support frame according to claim 4, wherein, The satellite forms the hollow portion in the first-1 region, the first-2 region, and the second region.

6. The substrate support frame according to claim 4, wherein, In at least a portion of the satellite in the second region, the height of the hollow portion gradually decreases towards the first-second region.

7. The substrate support frame according to claim 4, wherein, In at least a portion of the satellite in region 1-1, the height of the hollow portion gradually decreases towards region 1-2.

8. The substrate support frame according to claim 4, wherein, The satellite forms a groove-shaped protrusion at the rotation center below; and in at least a portion of the first-1 region, the height of the hollow portion gradually decreases toward the protrusion.

9. The substrate support frame according to claim 4, wherein, In at least a portion of the satellite in the second region, based on the same area, the number of hollow sections gradually decreases towards the first-second region.

10. The substrate support frame according to claim 4, wherein, In at least a portion of the satellite in the second region, the size of the hollow portion gradually decreases towards the first-second region, based on the same area.

11. A substrate processing apparatus, comprising: A process chamber that forms a processing space capable of handling substrates; a substrate support frame as described in any one of claims 1 to 10; And a gas injection unit, located above the process chamber opposite to the substrate support, injects processing gas onto the substrate support.

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