Physical unclonable function generator structure

Abstract

A physically non-replicable function generator structure includes a substrate and multiple physically non-replicable function generators. Each physically non-replicable function generator includes a first doped region, a second doped region, and a bridging doped region. The first doped region and the second doped region are located in the substrate and are separated from each other. The maximum width of the top view pattern of the bridging doped region is less than the minimum width specified by the design rules, and the bridging doped region is randomly located between the first doped region and the second doped region, so that short circuits randomly exist between the first doped region and the second doped region.

Claims

1. A physically non-replicable function generator structure, comprising: Base; And multiple physically non-replicable function generators, wherein each of the physically non-replicable function generators includes: a first doped region and a second doped region, located in the substrate and separated from each other; And a bridging doped region, wherein the maximum width of the top view pattern of the bridging doped region is less than the minimum width specified by the design rules, and the bridging doped region is randomly located between the first doped region and the second doped region, such that a short circuit randomly exists between the first doped region and the second doped region.

2. The physically non-replicable function generator structure as described in claim 1, wherein the minimum width of the top view pattern of the first doped region is greater than or equal to the minimum width specified by the design rule, and the minimum width of the top view pattern of the second doped region is greater than or equal to the minimum width specified by the design rule.

3. The physically non-replicable function generator structure as claimed in claim 1, wherein the maximum width of the top view pattern of the bridging doped region in one of the plurality of physically non-replicable function generators is greater than or equal to the maximum width of the top view pattern of the bridging doped region in the other of the plurality of physically non-replicable function generators.

4. The physically non-replicable function generator structure as claimed in claim 1, wherein one of the plurality of physically non-replicable function generators has a bridging doped region located between the first doped region and the second doped region, such that a short circuit exists between the first doped region and the second doped region.

5. The physically non-replicable function generator structure as described in claim 4, wherein another of the plurality of physically non-replicable function generators does not have the bridging doped region located between the first doped region and the second doped region, such that a break exists between the first doped region and the second doped region.

6. The physically non-replicable function generator structure as described in claim 1, wherein the first doped region, the second doped region, and the bridging doped region have the same conductivity type.

7. The physically non-replicable function generator structure as described in claim 1, wherein the top view pattern of the first doped region and the top view pattern of the second doped region comprise islands.

8. The physically non-replicable function generator structure as described in claim 1, wherein the physically non-replicable function generator includes a plurality of second doped regions, and the plurality of second doped regions are located around the first doped region.

9. The physically non-replicable function generator structure as described in claim 1, further comprising: A well region is located in the substrate, wherein the first doped region, the second doped region and the bridging doped region are located in the well region.

10. The physically unreplicable function generator structure as claimed in claim 1, wherein the first doped region, the second doped region and the bridging doped region have a first conductivity type, and the well region has a second conductivity type.

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