Method of forming thin film

Abstract

A thin film formation method involves forming a thin film on a wafer using a coating system. The method includes: selecting a target film thickness profile for the thin film; placing the wafer on a sample stage; determining coating parameters based on the target film thickness profile; adjusting the level of the sample stage according to the coating parameters and forming the thin film on the surface of the wafer; measuring the film thickness profile; comparing the film thickness profile with the target film thickness profile to determine the state of the thin film; wherein if the state meets a standard, the coating parameters are stored in a database; if the state does not meet the standard, a new wafer is placed back on the sample stage, and the above steps are repeated.

Claims

1. A thin film formation method, comprising forming a thin film on a wafer using a coating system, the coating system including a chamber, a sample stage, and a height control device, the sample stage being located within the chamber, the height control device including a plurality of legs coupled to the sample stage for adjusting the horizontal state of the sample stage, wherein the method includes: Select the target film thickness profile of the thin film; The wafer is placed on the sample stage; The coating parameters are determined based on the target film thickness profile of the thin film; The horizontal state of the sample stage is adjusted according to the coating parameters, and the thin film is formed on the surface of the wafer; the film thickness profile of the thin film is measured; the film thickness profile of the thin film is compared with the target film thickness profile to determine the state of the thin film, wherein if the state meets the standard, the coating parameters are stored in the database; if the state does not meet the standard, the coating parameters are re-determined according to the film thickness profile of the thin film.

2. The thin film forming method as claimed in claim 1, wherein the step of determining the coating parameters based on the target film thickness profile of the thin film includes: Measure the starting position of the sample stage; Measure the existing film thickness profile of the wafer; The target film thickness is determined based on the target film thickness profile, and a corresponding thickness mode is selected based on the target film thickness; the coating parameters are determined using a first algorithm based on the target film thickness profile, the existing film thickness profile, and the thickness mode.

3. The thin film formation method as claimed in claim 2, wherein the coating parameters include the horizontal state of the sample stage, the coating time, and the usage state of the coating system.

4. The thin film formation method as claimed in claim 1, wherein the horizontal state of the sample stage includes the positional combination of the plurality of legs.

5. The thin film formation method as claimed in claim 2, wherein the step of determining the coating parameters using the first algorithm based on the target film thickness profile, the existing film thickness profile, and the thickness pattern includes: Based on the target film thickness profile, the existing film thickness profile, and the thickness pattern, a corresponding precedent is searched in the database. If the corresponding precedent exists, the coating parameters of the corresponding precedent are used as the coating parameters of the target film thickness profile, the existing film thickness profile, and the thickness pattern. If the corresponding precedent does not exist, the coating parameters of the target film thickness profile, the existing film thickness profile, and the thickness pattern are calculated using the first algorithm.

6. The thin film formation method as claimed in claim 2, wherein the first algorithm includes linear regression, interpolation, or extrapolation.

7. The thin film formation method as claimed in claim 5, wherein the corresponding prior includes a previous wafer or a previous batch of wafers.

8. The thin film formation method as claimed in claim 2, wherein the thickness pattern is established by the following steps: determining the starting position of the sample stage; establishing multiple combinations of foot positions of the multiple feet of the sample stage; changing the position of the multiple feet corresponding to each of the multiple combinations of foot positions, depositing a film on the wafer, and measuring the thin film thickness profile corresponding to each of the multiple combinations of foot positions; establishing the thickness pattern using a second algorithm based on the multiple combinations of foot positions and the corresponding thin film thickness profiles, wherein the thickness pattern includes the relationship between the combinations of foot positions and the thin film thickness profiles.

9. The thin film formation method as claimed in claim 8, wherein the second algorithm includes linear regression, interpolation, or extrapolation.

10. The thin film forming method as claimed in claim 2, wherein the number of the plurality of legs is greater than or equal to three.

11. The thin film forming method as claimed in claim 2, wherein the positions of the plurality of legs are independent of each other.

12. The thin film forming method of claim 1, wherein the thickness of the target film thickness profile at the center of the wafer may be greater than, equal to, or less than the thickness at the edge of the wafer.

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