Radio frequency front-end circuit

Abstract

A radio frequency (RF) front-end circuit includes a diffusion region, a polysilicon layer, and a first conductive layer. The diffusion region has drains and sources for a first transistor and a second transistor, respectively. The polysilicon layer includes multiple first polysilicon regions, each with a gate for the first transistor and the second transistor. The first conductive layer includes an RF input conductive region, an RF output conductive region, and multiple first intermediate conductive regions. The RF input conductive region is coupled to the first polysilicon regions to serve as the RF input terminal of a low-noise amplifier and to receive RF input signals. The RF output conductive regions are coupled to the drains of the first transistor and the second transistor to serve as the RF output terminal of the low-noise amplifier and to output RF output signals. The first intermediate conductive regions couple the sources of the first transistor and the second transistor to ground.

Claims

1. A radio frequency front-end circuit, comprising: A diffusion region is provided with the drain and source terminals of a first transistor and a second transistor, respectively. A polysilicon layer, disposed above the diffusion region, includes: a plurality of first polysilicon regions, each having a gate of a first transistor and a second transistor; and a first conductive layer, disposed above the diffusion region and the polysilicon layer, including: a radio frequency input conductive region coupled to the first polysilicon regions to serve as a radio frequency input terminal of a low-noise amplifier and to receive a radio frequency input signal; a radio frequency output conductive region coupled to the drains of the first transistor and the second transistor to serve as a radio frequency output terminal of the low-noise amplifier and to output a radio frequency output signal; and a plurality of first intermediate conductive regions, the sources of the first transistor and the second transistor being coupled to a ground terminal via the first intermediate conductive regions.

2. The radio frequency front-end circuit of claim 1, wherein the diffusion region extends in a first direction, the first polysilicon regions are electrically separated from each other and extend in a second direction substantially perpendicular to the first direction, the radio frequency input conductive region, the radio frequency output conductive region and the first intermediate conductive regions are electrically separated from each other, the radio frequency input conductive region extends in the first direction, and the radio frequency output conductive region and the first intermediate conductive regions extend in the second direction.

3. The radio frequency front-end circuit of claim 2, wherein the diffusion region is further provided with a first post-stage transistor and a second post-stage transistor, each of the first post-stage transistor and the second post-stage transistor being equivalent to a parallel transistor, and the polysilicon layer further includes a plurality of electrically separated second polysilicon regions extending in the second direction to provide the gates of the first post-stage transistor and the second post-stage transistor.

4. The RF front-end circuitry as described in claim 3 further includes: A second conductive layer is disposed above the diffusion region, the polysilicon layer and the first conductive layer, and coupled to the radio frequency output conductive region and the second polysilicon regions to transmit the radio frequency output signal to the gates of the first and second post-stage transistors.

5. The radio frequency front-end circuit of claim 3, wherein the first conductive layer further comprises: A post-stage RF output conductive region is coupled to the drains of the first post-stage transistor and the second post-stage transistor to output the post-stage RF output signal of the low-noise amplifier.

6. A radio frequency front-end circuit, comprising: A diffusion region is provided with the drain and source of a first transistor, a second transistor, and a third transistor, respectively, wherein the first transistor, the second transistor, and the third transistor are each equivalent to parallel transistors; A polysilicon layer, disposed above the diffusion region, includes: a plurality of first polysilicon regions, each having a gate of a first transistor; and a plurality of second polysilicon regions, each having a gate of a second transistor and a third transistor; a first conductive layer, disposed above the diffusion region and the polysilicon layer, including: a radio frequency input conductive region, coupled to the first polysilicon regions, serving as a radio frequency input terminal of a mixer and receiving a radio frequency signal; and a plurality of intermediate frequency output conductive regions, coupled to the drains of the second transistors and the third transistors, serving as an intermediate frequency output terminal of the mixer and outputting an intermediate frequency output signal; and a second conductive layer, disposed above the diffusion region, the polysilicon layer, and the first conductive layer, and coupled to the second polysilicon regions and the gates of the second transistors and the third transistors, serving as a local input terminal of the mixer and receiving a local input signal.

7. The radio frequency front-end circuit of claim 6, wherein the diffusion region extends in a first direction, the first polysilicon regions and the second polysilicon regions are electrically separated from each other and extend in a second direction substantially perpendicular to the first direction, the radio frequency input conductive region and the intermediate frequency output conductive regions are electrically separated from each other, the radio frequency input conductive region extends in the first direction, the intermediate frequency output conductive regions extend in the second direction, and the second conductive layer extends in the second direction.

8. The radio frequency front-end circuit of claim 6, wherein the first conductive layer further comprises: A first intermediate conductive region is provided, and the drain of the first transistor is coupled to the source of the second transistor and the third transistor respectively via the first intermediate conductive region.

9. The radio frequency front-end circuit of claim 6, wherein the diffusion region is further provided with a first mirror transistor, a second mirror transistor and a third mirror transistor, each having a drain and a source, wherein the first mirror transistor is equivalent to a parallel transistor, and the polysilicon layer further includes a plurality of mirror polysilicon regions for providing the gates of the first mirror transistor, the second mirror transistor and the third mirror transistor.

10. The radio frequency front-end circuit of claim 9, wherein the second conductive layer is further coupled to one of the mirrored polysilicon regions to transmit a negative local input signal to the gate of the third mirrored transistor.

11. The RF front-end circuit of claim 9, wherein one of the intermediate frequency output conductive regions is coupled to the drain of a third mirror transistor to output the intermediate frequency output signal.

12. The radio frequency front-end circuit of claim 9, wherein the first conductive layer further comprises: A negative intermediate frequency output conductive region is coupled to the drains of the second and third mirror transistors, respectively, to serve as a negative intermediate frequency output terminal of the mixer and output a negative intermediate frequency output signal.

13. A radio frequency front-end circuit, comprising: A diffusion region is provided with the drain and source of an input transistor, a first transistor, a second transistor, and a third transistor, respectively, wherein the input transistor and the first transistor are each equivalent to parallel transistors; a polycrystalline silicon layer is disposed above the diffusion region, including a plurality of polycrystalline silicon regions for providing the gates of the input transistor, the first transistor, the second transistor, and the third transistor; A first conductive layer, disposed above the diffusion region and the polysilicon layer, includes: a radio frequency input conductive region coupled to the gate of the input transistor to serve as a radio frequency input terminal of a low-noise amplifier and receive a radio frequency input signal; a local input conductive region coupled to the gates of the second and third transistors to serve as a local input terminal of a mixer and receive a local input signal; and a radio frequency output conductive region coupled to the drain of the input transistor to serve as a radio frequency output terminal of the low-noise amplifier and output a radio frequency output signal, and coupled to the gate of the first transistor to serve as a radio frequency input terminal of the mixer. The mixer includes an intermediate frequency output conductive region coupled to the drains of the second and third transistors to serve as an intermediate frequency output terminal and output an intermediate frequency output signal, and a second conductive layer disposed above the diffusion region, the polysilicon layer and the first conductive layer, coupled to the gate of the first transistor and the radio frequency output conductive region to transmit the radio frequency output signal.

14. The radio frequency front-end circuit of claim 13, wherein the polysilicon layer comprises: A plurality of first polysilicon regions are provided with the gates of the input transistor and coupled to the radio frequency input conductive region; A plurality of second polysilicon regions are provided with the gates of the first transistor and coupled to the RF output conductive region and the second conductive layer; and a plurality of third polysilicon regions are provided with the gates of the second transistor and the third transistor respectively and coupled to the local input conductive region.

15. The radio frequency front-end circuit of claim 14, wherein the diffusion region extends in a first direction, the first polysilicon regions, the second polysilicon regions and the third polysilicon regions are electrically separated from each other and extend in a second direction substantially perpendicular to the first direction, the radio frequency input conductive region, the radio frequency output conductive region, the local input conductive region and the intermediate frequency output conductive region are electrically separated from each other, the radio frequency input conductive region extends in the first direction, the radio frequency output conductive region extends in the second direction, the intermediate frequency output conductive regions extend in the second direction, and the second conductive layer extends in the second direction.

16. The radio frequency front-end circuit of claim 13, wherein the first conductive layer further comprises: A first intermediate conductive region is provided, through which the drain of the first transistor is coupled to the respective sources of the second and third transistors.

17. The radio frequency front-end circuit of claim 13, wherein the diffusion region is further provided with a first post-stage transistor and a second post-stage transistor, each of the first post-stage transistor and the second post-stage transistor being equivalent to a parallel transistor, and the polysilicon regions of the polysilicon layer are further provided with gates for the first post-stage transistor and the second post-stage transistor.

18. The radio frequency front-end circuit of claim 17, wherein the second conductive layer is further coupled to the polysilicon regions disposed at the drain of the input transistor and the gates of the first and second subsequent transistors to transmit radio frequency output signals.

19. The radio frequency front-end circuit of claim 17, wherein the first conductive layer further includes a downstream radio frequency output conductive region, and the drains of the first downstream transistor and the second downstream transistor are coupled to the polysilicon regions disposed on the gate of the first transistor via the downstream radio frequency output conductive region and the second conductive layer to transmit a downstream radio frequency output signal.

20. The radio frequency front-end circuit of claim 17, wherein the diffusion region is further provided with a first mirror transistor, a second mirror transistor and a third mirror transistor, each having a drain and a source, the polysilicon layer further including a plurality of mirror polysilicon regions for providing the gates of the first mirror transistor, the second mirror transistor and the third mirror transistor, and the second conductive layer is further coupled to one of the mirror polysilicon regions to transmit a negative local input signal to the gate of the third mirror transistor.

Images