Optical transistor

Abstract

A photoelectric crystal includes: a first doped semiconductor layer having a base layer; a second doped semiconductor layer in contact with the base layer and forming a PN junction; and a plurality of third doped semiconductor layers in contact with the second doped semiconductor layer and forming a PN junction.

Claims

1. A photoelectric crystal, comprising: A first doped semiconductor layer (12) has a base layer (12B) and a protruding layer (12P) protruding from the base layer (12B); a second doped semiconductor layer (13) contacts the base layer (12B) and the protruding layer (12P) and forms a PN junction; and a plurality of third doped semiconductor layers (14) contacts the second doped semiconductor layer (13) and forms a PN junction; wherein the protruding layer (12P) is disposed correspondingly to the third doped semiconductor layers (14).

2. The photoelectric crystal as claimed in claim 1, wherein the third doped semiconductor layers (14) together form the emitter.

3. The photoelectric crystal as claimed in claim 1, wherein a height (H1) between a top surface (BS) of the substrate (12B) and a top surface (1S) of the photoelectric crystal is greater than a height (H2) between a top surface (PS) of the protruding layer (12P) and the top surface (1S) of the photoelectric crystal.

4. The photoelectric crystal as claimed in claim 1, wherein each of the third doped semiconductor layers (14) has one of a plurality of corresponding coverage regions (PJ), which are covered by a top surface (PS) of the protrusion layer (12P).

5. The photoelectric crystal as claimed in claim 1, wherein the first doped semiconductor layer (12) further comprises: a plurality of protrusion layers (12P1, 12P2) protruding from the base layer (12B) and correspondingly disposed with respect to the third doped semiconductor layers (14); wherein, The second doped semiconductor layer (13) contacts the base layer (12B) and the protruding layers (12P1, 12P2) to form a PN junction.

6. The photoelectric crystal as claimed in claim 5, wherein a height (H1) between a top surface (BS) of the substrate (12B) and a top surface (1S) of the photoelectric crystal is greater than a height (H2) between a top surface (PS) of each of the protruding layers (12P1, 12P2) and the top surface (1S) of the photoelectric crystal.

7. The photoelectric crystal as claimed in claim 5, wherein a corresponding coverage area (PJ) of each of the third doped semiconductor layers (14) is covered by a top surface (PS) of each of the protruding layers (12P1).

8. The photoelectric crystal as claimed in claim 5, wherein a corresponding covered region (PJ) of each of the third doped semiconductor layers (14) substantially overlaps with a top surface (PS) of each of the protruding layers (12P2).

9. The photoelectric crystal as claimed in any one of claims 1 to 8, wherein the first doped semiconductor layer (12) and the third doped semiconductor layers (14) are of the type N-type semiconductor and the second doped semiconductor layer (13) is of the type P-type semiconductor.

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