LED heater system and apparatus for semiconductor wafer processing having the same

Abstract

This invention provides a light-emitting diode (LED) heater system and a semiconductor wafer processing apparatus equipped with said heater system. The LED heater system for heating a semiconductor wafer includes a heat sink and a plurality of LED modules disposed on the heat sink along a circumferential direction. Each LED module includes a circuit board and a plurality of LEDs mounted on the circuit board. Each LED module includes a channel for grouping and controlling the plurality of LEDs arranged along a radial direction. Each LED module is formed in a fan-shaped form, and when all the LED modules are secured to the heat sink, the entire assembly forms a circular shape.

Description

Technical Field

[0001] This invention is a divisional application of patent application number 114114070, filed on April 14, 2025. The original application was entitled "Light Emitting Diode (LED) Heater System and Semiconductor Wafer Processing Apparatus Equipped with the Heater System", the entire contents of which are incorporated herein by reference.

[0002] The present invention relates to a light-emitting diode (LED) heater system and a semiconductor wafer processing apparatus equipped with said heater system. Prior Technology

[0003] In semiconductor manufacturing, the processing of semiconductor wafers typically involves various processes such as photoresist coating, developing, etching, and ashing. Within each process, a wet cleaning process using chemical solutions or deionized water is performed to remove contaminants adhering to the semiconductor wafer, followed by a drying process to remove residual chemical solutions or deionized water from the wafer surface. Recently, etching processes have been implemented that selectively remove silicon nitride and silicon oxide films using high-temperature chemical aqueous solutions such as sulfuric acid or phosphoric acid. In semiconductor wafer processing apparatus utilizing high-temperature chemical aqueous solutions, infrared (IR) lamp heaters, which heat the semiconductor wafer using infrared (IR) lamps, are currently being used to improve etching rates.

[0004] However, a recent trend has emerged where the patterns formed on semiconductor wafers are becoming increasingly finer. Consequently, the phenomenon of wafer pattern collapse (or leaning) due to the surface tension of the cleaning solution during the drying process is also increasing. Residual cleaning solution on the semiconductor wafer surface is one of the causes of this collapse. To address this problem, a drying technology is needed that can rapidly heat the cleaning solution while uniformly heating the entire semiconductor wafer.

[0005] Examples of using light-emitting diodes (LEDs) as a heating source include registered patent publication No. 10-2101536 (hereinafter referred to as "Prior Invention 1") and registered patent publication No. 10-2078157 (hereinafter referred to as "Prior Invention 2").

[0006] Prior invention 1 is a technique that divides multiple light-emitting diodes (LEDs) into multiple LED regions by grouping them along the circumferential direction and controlling these multiple LED regions along the radial direction. However, prior invention 1 is actually a technique for imparting temperature differences to a semiconductor wafer along the radial direction, and therefore has limitations in its application for the purpose of uniformly controlling the temperature of a semiconductor wafer. Even when a partial structure is used to achieve temperature uniformity, the method of grouping multiple LEDs located at the same radius or the same radius along the circumferential direction and controlling them along the radial direction still has limitations in precisely controlling the minute temperature deviations generated along the radial direction on a rotating semiconductor wafer.

[0007] Furthermore, Prior Invention 2 proposes a structure that divides the heating area of ​​a heating plate into a central region, an intermediate region, and an edge region. The central region is formed in an inclined or curved shape to concentrate the heating light onto the central area of ​​the substrate, the edge region is formed in an inclined or curved shape to concentrate the heating light onto the edge region of the substrate, and the intermediate region is formed in a shape horizontal to the substrate. However, Prior Invention 2 only uses an inclined structure in different areas of the heating plate, and this structure has limitations in terms of homogenizing and controlling the temperature deviation of the semiconductor wafer.

[0008] Furthermore, when using the configuration described in Prior Invention 1 and Prior Invention 2, where light-emitting diodes (LEDs) are simply arranged compactly with a certain phase interval between each other within a divided area, there are limitations in compensating for the minute temperature differences generated in the semiconductor wafer.

[0009] In addition, in order to solve the problems in existing infrared (IR) lamp heaters, the applicant has filed patent application No. 10-2232654 (hereinafter referred to as "Prior Invention 3") and patent application No. 10-2102277 (hereinafter referred to as "Prior Invention 4") which uses a light-emitting diode (LED) as a heating source.

[0010] Figures 1a to 1c are schematic diagrams disclosed in Prior Invention 3. Referring to Figures 1a to 1c, the semiconductor wafer processing apparatus 10 of Prior Invention 3 includes: a chuck stage 100 configured to clamp and rotate a semiconductor wafer; a heating unit 500 configured to heat the semiconductor wafer; a cover 700 mounted on the upper part of the main body to cover the heating unit 500; and a control unit (not shown) for controlling the heating unit 500. The chuck stage 100 includes: a plurality of chuck pins 170 for holding the semiconductor wafer; an outer contour portion 130 with a plurality of support pins 180 arranged thereon; and a recessed portion 150 on which the heating unit 500 is provided. The wafer processing apparatus 10 includes: a heating unit 500, equipped with a first light-emitting diode group consisting of a plurality of first light-emitting diodes 531 that vertically irradiate the lower side surface of the non-outer contour region of the wafer W, and a second light-emitting diode group consisting of a plurality of second light-emitting diodes 551 that obliquely irradiate the lower side surface of the outer contour region of the wafer W along the outer contour direction. Prior invention 3 uniformly heats the semiconductor wafer using the first light-emitting diode group and the second light-emitting diode group (wherein, unspecified figure number 111 is a connecting component, 310 is a pillar cover, 510 is a plate, 511 is a second central hole, 513 is an inflow portion, 515 is an outflow portion, 520 is an inclined portion, 521 is an inclined surface, 530 is a first light-emitting diode substrate, 550 is a second light-emitting diode substrate, and 710 is a third central hole of the cover).

[0011] Figure 2 is a schematic diagram disclosed in prior art 4. Referring to Figure 2, the light-emitting diode (LED) heating system 30 is divided into at least two or more regions along the circumferential direction. For example, the LED heating system 30 is divided into a first region 311, a second region 312, and a third region 313 at an angle of 120 degrees, and each region can be controlled independently. Furthermore, the multiple light-emitting diode (LED) elements 320 provided in each region are divided into multiple groups. In addition, the first region 311, the second region 312, and the third region 313 are each divided into three groups. From the center along the radial direction, they are divided into a first group 3111, 3121, 3131, a second group 3112, 3122, 3132, and a third group 3113, 3123, 3133. As described above, the light-emitting diode (LED) heating system 30 of the prior invention 4 is divided into multiple regions along the circumferential direction, and the multiple regions can be controlled individually. The multiple regions are provided as set regions or compensation regions, thereby enabling uniform heating of the semiconductor wafer.

[0012] The prior art 3 and prior art 4 proposed by the applicant have practical advantages in dividing multiple light-emitting diodes (LEDs) into multiple regions and heating a semiconductor wafer. However, there is still a need for a method that can more precisely and uniformly control the temperature of the semiconductor wafer while utilizing the advantages of prior art 3 and prior art 4 as described above. Therefore, the inventors of the present invention believe it is necessary to develop a structure that can heat a semiconductor wafer by dividing multiple light-emitting diodes (LEDs) into multiple regions, but in a way that differs from the existing methods.

[0013] [Preliminary Technology Documents]

[0014] [Patent Literature]

[0015] (Patent Document 0001) Prior Invention 1: Registered Patent Publication No. 10-2101536

[0016] (Patent Document 0002) Prior Invention 2: Registered Patent Publication No. 10-2078157

[0017] (Patent Document 0003) Prior Invention 3: Registered Patent Publication No. 10-2232654

[0018] (Patent Document 0004) Prior Invention 4: Registered Patent Publication No. 10-2102277 Summary of the Invention

[0019] The present invention aims to solve the problems existing in the prior art as described above. The object of the present invention is to provide an LED heater system that is divided into multiple light-emitting diode (LED) modules arranged along a circumferential direction, and that allows for individual control of each channel by arranging multiple LEDs along a radial direction on each LED module, thereby enabling overall uniform control of the heating temperature of a semiconductor wafer, as well as a semiconductor wafer processing apparatus equipped with the heater system.

[0020] The present invention aims to provide a light-emitting diode (LED) heater system. As an LED heater system for heating semiconductor wafers, it includes a heat sink and a plurality of LED modules arranged circumferentially on the heat sink. Each LED module includes a circuit board and a plurality of LEDs mounted on the circuit board. Each LED module includes a channel for grouping and controlling the plurality of LEDs arranged radially. Each LED module is formed in a fan shape, and when all the LED modules are secured to the heat sink, the entire assembly forms a circular shape.

[0021] Preferably, each light-emitting diode (LED) module includes an inner arc portion, an outer arc portion, a left radius portion connecting the inner arc portion and the outer arc portion, and a right radius portion.

[0022] Preferably, the arrangement of the light-emitting diodes (LEDs) on at least one of the plurality of light-emitting diode (LED) modules is different from the arrangement of the light-emitting diodes (LEDs) on at least one other light-emitting diode (LED) module.

[0023] Preferably, the arrangement of the light-emitting diodes (LEDs) on at least one of the multiple channels is different from the arrangement of the light-emitting diodes (LEDs) on at least one other channel.

[0024] Preferably, multiple channels can be controlled individually for each channel.

[0025] Preferably, multiple channels can be output controlled according to each channel.

[0026] Preferably, the multiple channels are controlled in a manner that maintains a uniform heating temperature on the semiconductor wafer.

[0027] The present invention aims to provide a semiconductor wafer processing apparatus, comprising a chuck stage and a light-emitting diode (LED) heater system. The chuck stage is configured to clamp the semiconductor wafer. The LED heater system is mounted to heat the semiconductor wafer clamped to the chuck stage. The LED heater system includes a heat sink and a plurality of LED modules arranged circumferentially on the heat sink. Each LED module includes a circuit board and a plurality of LEDs mounted on the circuit board. Each LED module includes a channel for grouping and controlling the plurality of LEDs arranged radially. Each LED module is formed in a fan shape, and when all the LED modules are secured to the heat sink, the entire assembly forms a circular shape.

[0028] Preferably, the semiconductor wafer is heated uniformly by individually controlling the multiple channels.

[0029] Preferably, the semiconductor wafer is heated uniformly by controlling the output of the multiple channels according to each channel.

[0030] Preferably, the heat sink is composed of at least one of water-cooled, air-cooled, and heat sink fins.

[0031] The present invention provides a light-emitting diode (LED) heater system and a semiconductor wafer processing apparatus equipped with the heater system, which is divided into multiple light-emitting diode (LED) modules and arranged in a circumferential direction. Moreover, by arranging multiple channels along the circumferential direction on each light-emitting diode (LED) module to group the multiple light-emitting diodes (LEDs) along the radial direction, the channels can be individually controlled, thereby enabling overall uniform control of the heating temperature of the semiconductor wafer. Simple Explanation of the Diagram

[0032] Figure 1a is a perspective view of a semiconductor wafer processing apparatus according to the prior art, namely, the prior invention 3.

[0033] Figure 1b is an exploded perspective view of a semiconductor wafer processing apparatus according to the prior art, namely, prior invention 3.

[0034] Figure 1c is an exploded perspective view of the heating section according to the prior art, namely the prior invention 3.

[0035] Figure 2 is a plan view of a light-emitting diode (LED) heating system based on the prior art, namely the prior invention 4.

[0036] Figure 3 is a plan view of a light-emitting diode (LED) heater system according to a preferred embodiment of the present invention.

[0037] Figure 4 is a plan view of an integral light-emitting diode (LED) module according to a preferred embodiment of the present invention.

[0038] Figure 5 is a detached oblique view of an integral light-emitting diode (LED) module according to a preferred embodiment of the present invention.

[0039] Figure 6 is a plan view of a first light-emitting diode (LED) module according to a preferred embodiment of the present invention.

[0040] Figure 7 is a plan view of a second light-emitting diode (LED) module according to a preferred embodiment of the present invention.

[0041] Figure 8 is a plan view of a third light-emitting diode (LED) module according to a preferred embodiment of the present invention.

[0042] Figure 9 is a plan view of a heat sink according to a preferred embodiment of the present invention.

[0043] Figure 10 is a perspective view of a modified light-emitting diode (LED) heater system according to a preferred embodiment of the present invention.

[0044] Figure 11 is a plan view of a modified light-emitting diode (LED) heater system according to a preferred embodiment of the present invention. Implementation

[0045] The following description is merely an illustration of the principles of the present invention. Therefore, those skilled in the art can invent various devices that implement the principles of the present invention and are included within the concept and scope of the invention, even if not explicitly described or illustrated in this specification. Furthermore, it should be understood that all conditional terms and embodiments listed in this specification are, in principle, only explicitly intended to aid in understanding the concept of the invention and are not limited to the specifically listed embodiments and states as described above.

[0046] The objectives, features, and advantages described above will become even clearer from the following detailed description in conjunction with the accompanying drawings, so that those skilled in the art to which this invention pertain can readily implement the technical ideas of this invention.

[0047] The embodiments described in this specification are illustrated with reference to the ideal schematic diagrams of the invention, namely cross-sectional views and / or oblique views. To effectively illustrate the technical content, the thickness of films and regions in the drawings may be exaggerated. The morphology of the illustrated diagrams may be distorted depending on manufacturing techniques and / or tolerances. The embodiments of the invention are not limited to the specific morphologies illustrated, but also include morphological variations resulting from the manufacturing process. The technical terms used in this specification are for illustrative purposes only and are not intended to limit the invention. Singular statements also have plural meanings unless the context clearly indicates otherwise. In this specification, terms such as "comprising" or "equipped" are used only to indicate the presence of features, numbers, steps, actions, constituent elements, components, or combinations thereof described herein, and should not be construed as excluding the possibility of one or more other features, numbers, steps, actions, constituent elements, components, or combinations thereof being present or added.

[0048] The basic technical concept of the LED heater system 1000 of the present invention is to divide the LED modules 1200 into multiple LED modules 1200 and arrange them along the circumferential direction. Furthermore, it is equipped with multiple channels 1230 that group the LEDs 1220 along the radial direction. While spatially dividing the multiple channels 1230 along the circumferential direction, it allows for individual control of each channel 1230, thereby homogenizing the temperature of the heated object, i.e., the semiconductor wafer. In addition, the technical concept of the present invention is that the arrangement and / or quantity of LEDs 1220 in the central region, middle region, and outer region of at least one channel 1230 spatially divided along the circumferential direction are different from the arrangement and quantity of LEDs 1220 in the central region, middle region, and outer region of other channels 1230. This allows one channel 1230 to compensate for the amount of LED light emitted in the radial direction of other channels 1230.

[0049] The technical concept of the present invention will now be explained in detail with reference to the accompanying drawings.

[0050] Figure 3 is a plan view of a light-emitting diode (LED) heater system 1000 according to a preferred embodiment of the present invention; Figure 4 is a plan view of an integral light-emitting diode (LED) module 1200 according to a preferred embodiment of the present invention; Figure 5 is a separate oblique view of the integral light-emitting diode (LED) module 1200 according to a preferred embodiment of the present invention; Figure 6 is a plan view of a first light-emitting diode (LED) module 1201 according to a preferred embodiment of the present invention; Figure 7 is a plan view of a second light-emitting diode (LED) module 1202 according to a preferred embodiment of the present invention; Figure 8 is a plan view of a third light-emitting diode (LED) module 1203 according to a preferred embodiment of the present invention; Figure 9 is a plan view of a heat sink 1100 according to a preferred embodiment of the present invention; Figure 10 is an oblique view of a modified example of a light-emitting diode (LED) heater system 1000 according to a preferred embodiment of the present invention; and Figure 11 is a plan view of a modified example of a light-emitting diode (LED) heater system 1000 according to a preferred embodiment of the present invention.

[0051] Referring to a portion of the structure illustrated in Figures 1a and 1b, a semiconductor wafer processing apparatus 10 according to a preferred embodiment of the present invention includes: a chuck stage 100 configured to clamp and rotatably hold a semiconductor wafer W; a cover 700 mounted on the upper part of the chuck stage 100; and a control unit (not shown). The chuck stage 100 includes: a plurality of chuck pins 170 for holding the semiconductor wafer W; an outer portion 130 with a plurality of support pins 180 arranged thereon; and a recessed portion 150. The cover 700 is used to protect a light-emitting diode (LED) heater system 1000. The cover 700 may be transparent. The cover 700 may rotate together with the chuck stage 100.

[0052] The chuck stage 100 has a circular upper surface. The chuck stage 100 is coupled to the rotating part for rotation. The chuck pins 170 align the semiconductor wafer, which is supported by a plurality of support pins 180, to the correct position. During processing, the chuck pins 170 prevent the semiconductor wafer from dislodging from its correct position by contacting the sides of the semiconductor wafer.

[0053] An LED heater system 1000 is mounted inside the semiconductor wafer processing apparatus 10. The LED heater system 1000 heats the semiconductor wafer during the processing. The LED heater system 1000 uses an LED 1220 as a light source. The LED 1220 emits light of wavelength or multiple wavelengths that can be easily absorbed by the semiconductor wafer.

[0054] The light-emitting diode (LED) heater system 1000 includes a heat sink 1100 and a plurality of LED modules 1200 arranged circumferentially on the heat sink 1100. A semiconductor wafer is formed in a manner that allows it to be rotated using a chuck stage 100, while the LED heater system 1000 is fixedly mounted. In this manner, the LED heater system 1000 heats the rotating semiconductor wafer.

[0055] The heat sink 1100 may be circular with an area substantially the same as or larger than that of the plurality of light-emitting diode (LED) modules 1200. The heat sink 1100 is mounted in a fixed manner that does not rotate with the chuck table 100. The heat sink 1100 is composed of at least one of water cooling, air cooling, and heat dissipation fins.

[0056] Each light-emitting diode (LED) module 1200 includes a circuit board 1210 and a plurality of LEDs 1220 mounted on the circuit board 1210. The LEDs 1220 are mounted on the circuit board 1210 and electrically connected to a power source via the circuit board 1210. The circuit board 1210 is attached to a heat sink 1100 by means of screws and / or thermal paste. The thermal paste is applied between the circuit board 1210 and the heat sink 1100 to ensure heat conduction between them. The circuit board 1210 is provided with fastening holes h, thereby securing the circuit board 1210 to the heat sink 1100 by tightening screws into the fastening holes h, and thereby securing the LED module 1200 to the heat sink 1100.

[0057] Referring to Figures 4 and 5, each light-emitting diode (LED) module 1200, specifically, each circuit board 1210, is formed in a fan shape, consisting of a radius and an arc. When multiple LED modules 1200 are fastened to all heat sinks 1100, they collectively form a circular shape. The LED modules 1200 can be divided into a total of six equal segments. However, the number of segments and the segmentation angles of the LED modules 1200 are not limited to these.

[0058] Each light-emitting diode (LED) module 1200, specifically, each circuit board 1210 includes an inner arcuate portion 1211, an outer arcuate portion 1212, and a left radius portion 1213 and a right radius portion 1214 connecting the inner arcuate portion 1211 and the outer arcuate portion 1212. The left radius portion 1213 and the right radius portion 1214 are formed in a stepped configuration, thereby forming a clearance space 1260 between adjacent circuit boards 1210 to provide spacing between them. Wires (not shown) connected to a connector 1280 are disposed in the clearance space 1260. Wires (not shown) can be easily disposed through the clearance space 1260.

[0059] Each light-emitting diode (LED) module 1200, specifically, each circuit board 1210, has a recess 1270 on its outer contour. The recess 1270 is provided on the outer arc portion 1212 and is formed in a recessed shape. The recess 1270 is provided at the middle position in the circumferential direction of the outer arc portion 1212.

[0060] The circuit board 1210 is equipped with pads and wiring patterns for mounting the light-emitting diode (LED) 1220. Since the LED 1220 releases most of the total power as heat, the circuit board 1210 is preferably made of a high-heat-dissipation substrate in order to effectively dissipate the heat generated in the LED 1220. For example, the circuit board 1210 can be a metal substrate using a metal plate as the base or a high-heat-dissipation substrate such as a ceramic substrate, but it is not limited to these.

[0061] A connector 1280 for connecting external wires is provided in the circuit board 1210. The connector 1280 is provided on the upper side of the circuit board 1210 within the fan-shaped circuit board 1210. A non-LED mounting area 1250 is provided in the circuit board 1210 where LEDs 1220 are not mounted, and the connector 1280 is located in the non-LED mounting area 1250. The density of LEDs 1220 in the middle area is relatively low compared to the center area and the outer contour area, and there is unused space; therefore, it is preferable to equip the connector 1280 in the middle area among the center area, middle area, and outer contour area.

[0062] A through-hole 1240 is provided on at least one of the plurality of circuit boards 1210. The through-hole 1240 may be formed in the form of an elongated hole extending along the circumferential direction. The through-hole 1240 is formed at a position corresponding to the heat sink through-hole 1110 provided on the heat sink 1100, and corresponds to the mounting position of a wafer inspection sensor (not shown) mounted on the lower part of the heat sink 1100. The wafer inspection sensor (not shown) performs the function of detecting whether there is a semiconductor wafer on the chuck stage 100, and detects the presence or absence of the semiconductor wafer provided on it through the heat sink through-hole 1110 and the through-hole 1240.

[0063] According to the present invention, the light-emitting diode (LED) heater system 1000 is divided into a plurality of light-emitting diode (LED) modules 1200 and spatially divided along the circumferential direction, and the channels 1230 in each light-emitting diode (LED) module 1200 group the plurality of light-emitting diodes (LEDs) 1220 arranged along the radial direction.

[0064] Instead of using a single light-emitting diode (LED) module 1200, multiple LED modules 1200 spatially divided along the circumference can be used. This allows for easy replacement of each LED module 1200 and makes it easier to improve overall temperature uniformity by configuring the LED modules 1200 into an optimal combination.

[0065] Furthermore, when multiple light-emitting diode (LED) modules 1200 are spatially divided along the radial direction, temperature deviations in the radial direction may occur on the semiconductor wafer due to the manufacturing and assembly tolerances of each LED module 1200. However, by adopting a configuration in which multiple LED modules 1200 are spatially divided along the circumferential direction, the present invention can prevent temperature deviations in the radial direction from occurring on the semiconductor wafer.

[0066] The plurality of light-emitting diode (LED) modules 1200 include at least one LED module 1200 in which the arrangement of LEDs 1220 is different from that in another LED module 1200. In other words, the arrangement of LEDs 1220 on at least one of the plurality of LED modules 1200 may be different from the arrangement of LEDs 1220 on another LED module 1200.

[0067] Alternatively, the arrangement of the individual light-emitting diodes (LEDs) 1220 in all the multiple light-emitting diode (LED) modules 1200 can be different from each other.

[0068] Each light-emitting diode (LED) module 1200 includes at least one channel 1230 for controlling multiple LEDs 1220 arranged along a radial direction. The channel 1230 can control multiple LEDs 1220 together by grouping them along the radial direction. The channel 1230 can also control multiple LEDs 1220 simultaneously by converging them together. The arrangement and number of LEDs 1220 grouped along the radial direction in each channel 1230 can be different.

[0069] When dividing the region from the inside to the outside in the radial direction, the central region is the area from the center point to the first radius, the middle region is the area from the first radius to the second radius, and the outer region is the area from the second radius to the third radius. Alternatively, when the light-emitting diodes (LEDs) configured in the overall light-emitting diode (LED) module 1200 are arranged at certain intervals from the inside to the outside in the radial direction, the radius interval can be divided from the inside to the outside in the radial direction into R1 to Rn (where n is a natural number). This can be achieved by dividing these intervals into three sections, starting from the inside, to form a central region, a middle region, and an outer region. Alternatively, these intervals can be equally divided into three sections, forming a central region, a middle region, and an outer region. Alternatively, at least one of the central region, middle region, and outer region can be a radius interval. For example, the central region can be the R1 interval, the outer region can be the Rn interval, and the interval between R1 and Rn can be the middle region. Furthermore, the middle region can be divided into two or more regions, such as a first middle region and a second middle region. As described above, the ranges of the central region, the intermediate region, and the outer contour region can be varied according to the method of dividing the light-emitting diode (LED) 1220 along the radial direction in order to achieve a uniform temperature distribution on the semiconductor wafer.

[0070] The plurality of channels 1230 may include: (a) a channel 1230 that groups at least one light-emitting diode (LED) 1220 disposed in a central region, at least one light-emitting diode (LED) 1220 disposed in an intermediate region, and at least one light-emitting diode (LED) 1220 disposed in an outer region along a radial direction; (b) a channel 1230 that groups at least one light-emitting diode (LED) 1220 disposed in a central region and at least one light-emitting diode (LED) 1220 disposed in an intermediate region along a radial direction; (c) a channel 1230 that groups at least one light-emitting diode (LED) 1220 disposed in a central region and at least one light-emitting diode (LED) 1220 disposed in an outer region along a radial direction. (d) A channel 1230 that groups at least one light-emitting diode (LED) 1220 in the outer region along a radial direction; (e) A channel 1230 that groups at least one light-emitting diode (LED) 1220 in the middle region and at least one light-emitting diode (LED) 1220 in the outer region along a radial direction; (f) A channel 1230 that includes at least one of at least one light-emitting diode (LED) 1220 in the central region, at least one light-emitting diode (LED) 1220 in the middle region, and at least one light-emitting diode (LED) 1220 in the outer region; at least one channel 1230.

[0071] Preferably, at least one channel 1230 includes at least one light-emitting diode (LED) 1220 disposed in the central region and at least one light-emitting diode (LED) 1220 disposed in the outer contour region, thereby controlling together a plurality of light-emitting diodes (LEDs) 1220 arranged radially from the central region to the outer contour region. Alternatively, preferably, when the radius interval is divided into R1 to Rn (where n is a natural number) from the inner side to the outer side of the radial direction, at least one channel 1230 may include at least one light-emitting diode (LED) 1220 in the R1 interval and at least one light-emitting diode (LED) 1220 in the Rn interval, thereby controlling together a plurality of light-emitting diodes (LEDs) 1220 arranged radially from the R1 interval to the Rn interval.

[0072] Alternatively, each of the multiple channels 1230 may include at least one light-emitting diode (LED) 1220 disposed in the central region and at least one light-emitting diode (LED) 1220 disposed in the outer contour region, and the arrangement of the multiple light-emitting diodes (LEDs) 1220 disposed between the central region and the outer contour region of at least one of the multiple channels 1230 may be different from the arrangement of the light-emitting diodes (LEDs) 1220 of the other channels 1230. Alternatively, more preferably, when the radius interval is divided into R1 to Rn (where n is a natural number) from the inside to the outside of the radial direction, each of the multiple channels 1230 includes at least one light-emitting diode (LED) 1220 in the R1 interval and at least one light-emitting diode (LED) 1220 in the Rn interval. The arrangement of the multiple light-emitting diodes (LEDs) 1220 between the R2 region and the Rn-1 region of at least one of the multiple channels 1230 can be different from the arrangement of the light-emitting diodes (LEDs) 1220 of other channels 1230.

[0073] Each light-emitting diode (LED) module 1200 may include at least one channel 1230. Because multiple LED modules 1200 are provided, more than one number of channels 1230 can be provided. The multiple channels 1230 are arranged along the circumferential direction.

[0074] The configuration and / or number of LEDs 1220 in the center, middle, and outer regions of each LED module 1200 may differ. Similarly, the configuration and / or number of LEDs 1220 in the center, middle, and outer regions of each channel 1230 may also differ.

[0075] Each light-emitting diode (LED) module 1200 or each channel 1230 is controlled to maintain a uniform heating temperature on the semiconductor wafer. Uniform heating of the semiconductor wafer is achieved by individually controlling and / or outputting each of the multiple LED modules 1200. Alternatively, uniform heating of the semiconductor wafer is achieved by individually controlling and / or outputting each of the multiple channels 1230.

[0076] Multiple light-emitting diode (LED) modules 1200 can be individually controlled. Alternatively, multiple channels 1230 can be individually controlled. At least a portion of the LED modules 1200 can be controlled to the On state, while the remaining LED modules 1200 are controlled to the Off state. The number of On and Off channels 1230 can be selected or varied to ensure uniform heating of the semiconductor wafer.

[0077] Alternatively, at least a portion of the multiple channels 1230 can be controlled to be in an On state, while the remaining channels 1230 can be controlled to be in an Off state. The number of channels 1230 that are on or off can be selected or varied to ensure uniform heating of the semiconductor wafer.

[0078] Multiple light-emitting diode (LED) modules 1200 can be output-controlled individually. The output levels of the multiple LED modules 1200 can differ. For example, at least a portion of the LED modules 1200 can be controlled to 100% output, a portion to 75% output, and the remaining portion to 50% output. The output level and number of each LED module 1200 can be selected or varied to ensure uniform heating of the semiconductor wafer.

[0079] Alternatively, the output of multiple channels 1230 can be controlled individually for each channel 1230. The output levels of the multiple channels 1230 can differ. For example, at least a portion of the channels 1230 can be controlled to 100% output, a portion of the channels 1230 to 75% output, and the remaining channels 1230 to 50% output. The output level and number of each channel 1230 can be selected or varied to ensure uniform heating of the semiconductor wafer.

[0080] Multiple light-emitting diode (LED) modules 1200 can also be individually controlled and their output controlled simultaneously. At least a portion of the LED modules 1200 can be controlled to the "On" state, while the remaining LED modules 1200 can be controlled to the "Off" state. The output levels of the LED modules 1200 controlled to the "On" state can be different for each other. This eliminates minute temperature non-uniformities generated on the semiconductor wafer.

[0081] Alternatively, multiple channels 1230 can be individually controlled and their outputs controlled simultaneously. At least some of the channels 1230 can be controlled to the On state, while the remaining channels 1230 can be controlled to the Off state, and the output levels of the channels 1230 controlled to the On state can be different for each other.

[0082] Multiple light-emitting diode (LED) modules 1200 or channels 1230 can be configured to provide uniform heating of the semiconductor wafer. As described above, since each LED module 1200 or channel 1230 can be individually controlled and its output controlled, each channel 1230 can be configured to provide uniform heating of the semiconductor wafer.

[0083] Furthermore, depending on the semiconductor wafer processing procedure or the state of the semiconductor wafer, even if the light-emitting diode (LED) module 1200 or channel 1230 is controlled according to the initial settings or subsequently changed conditions, the temperature of the semiconductor wafer may still be uneven. In the case described above, the temperature unevenness of the semiconductor wafer can be eliminated by changing or replacing one of the controllable individual light-emitting diode (LED) modules 1200 or channels 1230.

[0084] Furthermore, the semiconductor wafer processing apparatus may include a temperature detection component (not shown) for detecting the temperature of the semiconductor wafer. By using the temperature detection component to detect the temperature of the semiconductor wafer in real time, and by individually controlling multiple channels 1230 based on the detected temperature data, temperature non-uniformity of the semiconductor wafer can be eliminated. Specifically, the temperature detection component can provide temperature data by detecting the temperature distribution over the entire area of ​​the semiconductor wafer in real time. The method of controlling each light-emitting diode (LED) module 1200 or channel 1230 based on the temperature data distribution can be learned in advance and stored in a memory in tabular form. Therefore, based on the temperature data provided in real time by the temperature detection component and using the tabular information, control of each light-emitting diode (LED) module 1200 or channel 1230 and output control can be performed, thereby eliminating temperature non-uniformity of the semiconductor wafer.

[0085] Multiple light-emitting diode (LED) modules 1200 may include at least three LED modules 1200 with different arrangements of LEDs 1220. For example, as shown in Figures 4 and 5, the multiple LED modules 1200 include a first LED module 1201, a second LED module 1202, and a third LED module 1203 with different arrangements of LEDs 1220. However, the number of LED modules 1200 with different arrangements of LEDs 1220 is not limited to this. Multiple LED modules 1200 with different arrangements of LEDs 1220 can be equipped with two, such as a first LED module 1201 and a second LED module 1202, or more than four. Moreover, the arrangement of each LED 1220 in all multiple LED modules 1200 can be different.

[0086] At least one of the plurality of light-emitting diode (LED) modules 1200 is provided with a through-hole 1240 in its internal region, while at least another is not provided with a through-hole 1240. To compensate for insufficient light output due to the through-hole 1240, the arrangement of the LEDs 1220 in the LED module 1200 without the through-hole 1240 can be different from the arrangement of the LEDs 1220 in the LED module 1200 with the through-hole 1240. For example, the first LED module 1201 is provided with a through-hole 1240 penetrating the circuit board 1210, while the second LED module 1202 and the third LED module 1203 are not provided with through-holes 1240. In the first light-emitting diode (LED) module 1201, the LED 1220 needs to be configured in a position that avoids the through hole 1240. The resulting LED light quantity that needs to be compensated will be solved by the arrangement of the LEDs in the second LED module 1202 and the third LED module 1203, which are not equipped with the through hole 1240.

[0087] At least one of each of the first light-emitting diode (LED) module 1201, the second light-emitting diode (LED) module 1202, and the third light-emitting diode (LED) module 1203 can be provided. Preferably, a total of six LED modules 1200 can be provided, including two first LED modules 1201, two second LED modules 1202, and two third LED modules 1203.

[0088] Two first light-emitting diode (LED) modules 1201 are positioned in completely opposite locations, i.e., opposite to each other. Similarly, two second light-emitting diode (LED) modules 1202 and two third light-emitting diode (LED) modules 1203 are also positioned in completely opposite locations, i.e., opposite to each other. Thus, when a total of six LED modules 1200 are constituted, they are arranged along the circumferential direction in the following order: first LED module 1201, second LED module 1202, third LED module 1203, and so on.

[0089] Furthermore, as shown in Figures 4 and 5, all six light-emitting diode (LED) modules 1200 can have different arrangements of LEDs 1220. In other words, the LED modules 1200 located opposite the first LED module 1201 can have different arrangements of LEDs 1220, the LED modules 1200 located opposite the second LED module 1202 can have different arrangements of LEDs 1220, and the LED modules 1200 located opposite the third LED module 1203 can have different arrangements of LEDs 1220. However, in order to avoid repetition in the following description, only the first light-emitting diode (LED) module 1201, the second light-emitting diode (LED) module 1202, and the third light-emitting diode (LED) module 1203 will be described.

[0090] Figure 6 is a schematic diagram illustrating the first light-emitting diode (LED) module 1201. Referring to Figure 6, the first light-emitting diode (LED) module 1201 includes multiple channels 1230, preferably including two channels 1230. In Figure 6, the dashed lines are virtual lines used to represent the channels 1230.

[0091] The first light-emitting diode (LED) module 1201 includes a first-1 channel 1231a and a first-2 channel 1231b. In the region divided by the dashed line in Figure 6, the first-1 channel 1231a is located on the left, while the first-2 channel 1231b is located on the right. The first-1 channel 1231a and the first-2 channel 1231b include the same number of light-emitting diodes (LEDs) 1220, but are not limited thereto.

[0092] Channel 1-1 1231a includes a light-emitting diode (LED) 1220 disposed in the central region and a light-emitting diode (LED) 1220 disposed in the outer contour region, and includes light-emitting diodes (LEDs) 1220 arranged radially between the central region and the outer contour region, for example, including a total of 12 light-emitting diodes (LEDs) 1220. In channel 1-1 1231a, the plurality of light-emitting diodes (LEDs) 1220 are arranged in a "┓" or "T" shape as a whole.

[0093] When dividing the radial intervals from the inside to the outside, they can be divided into R1 to R11. The number of light-emitting diodes (LEDs) 1220 in each of the divided radial intervals of channel 1-1 1231a is different. Channel 1-1 1231a has 1 LED 1220 in each of the intervals R1 to R6, 0 LEDs 1220 in the R7 interval, 1 LED 1220 in the R8 interval, 0 LEDs 1220 in the R9 interval, 1 LED 1220 in the R10 interval, and 5 LEDs 1220 in the R11 interval.

[0094] Channel 1-2 1231b includes a light-emitting diode (LED) 1220 disposed in the central region and a light-emitting diode (LED) 1220 disposed in the outer contour region, and includes light-emitting diodes (LEDs) 1220 arranged radially between the central region and the outer contour region, for example, including a total of 17 light-emitting diodes (LEDs) 1220. In channel 1-2 1231b, the multiple light-emitting diodes (LEDs) 1220 are arranged in an inverted "┓" or "T" shape.

[0095] The number of light-emitting diodes (LEDs) 1220 in each of the divided radius intervals of channel 1-2 1231b is different. Channel 1-2 1231b has 1 LED 1220 in intervals R1 and R2, 3 LEDs 1220 in interval R3, 2 LEDs 1220 in interval R4, 1 LED 1220 in interval R5, 0 LEDs 1220 in interval R6, 1 LED 1220 in intervals R7 to R9, and 3 LEDs 1220 in intervals R10 and R11.

[0096] Channels 1-1a and 1-2b are similar in that they group the light-emitting diodes (LEDs) 1220 arranged along the radial direction, but the number of LEDs 1220 in their respective radius intervals is different, and therefore the arrangement of the LEDs 1220 is also different, resulting in different light amounts in their respective radius intervals for the two channels 1230.

[0097] The first light-emitting diode (LED) module 1201 includes a first-1 connector 1281a connected to a first-1 channel 1231a and a first-2 connector 1281b connected to a first-2 channel 1231b. The first-1 channel 1231a receives power through the first-1 connector 1281a, while the first-2 channel 1231b receives power through the first-2 connector 1281b.

[0098] Connector 1-1 1281a and connector 1-2 1281b are disposed in the non-mounting area 1250 of the light-emitting diode (LED) within the circuit board 1210. Connector 1-1 1281a and connector 1-2 1281b are respectively disposed in a radius range with the fewest LEDs 1220 disposed therein and with a large amount of remaining space. Connector 1-1 1281a is located between the R6 and R10 ranges, while connector 1-2 1281b is located between the R6 and R9 ranges. Connector 1-1 1281a is disposed to the left of channel 1-1 1231a, while connector 1-2 1281b is disposed to the right of channel 1-2 1231b.

[0099] The first light-emitting diode (LED) module 1201 has a recess 1270 on its outer contour, and based on the recess 1270, a first-1 channel 1231a and a first-2 channel 1231b are respectively divided on the left and right sides. In this way, the first-1 channel 1231a and the first-2 channel 1231b can be easily divided by the position of the recess 1270.

[0100] Figure 7 is a schematic diagram illustrating the second light-emitting diode (LED) module 1202. Referring to Figure 7, the second light-emitting diode (LED) module 1202 includes multiple channels 1230, preferably two channels 1230. In Figure 7, the dashed lines are virtual lines used to represent the channels 1230.

[0101] The second light-emitting diode (LED) module 1202 includes a second-1 channel 1232a and a second-2 channel 1232b. In the region divided by the dashed line in Figure 7, the second-1 channel 1232a is located on the left, while the second-2 channel 1232b is located on the right. Both the second-1 channel 1232a and the second-2 channel 1232b include the same number of light-emitting diodes (LEDs) 1220, but are not limited thereto.

[0102] Channel 2-1 1232a includes a light-emitting diode (LED) 1220 disposed in the central region and a light-emitting diode (LED) 1220 disposed in the outer contour region, and includes light-emitting diodes (LEDs) 1220 arranged radially between the central region and the outer contour region, for example, including a total of 18 light-emitting diodes (LEDs) 1220. In channel 2-1 1232a, the multiple light-emitting diodes (LEDs) 1220 are arranged in a "┓" or "T" shape as a whole.

[0103] When dividing the radial intervals from the inside to the outside, they can be divided into R1 to R11. The number of light-emitting diodes (LEDs) 1220 in each of the divided radial intervals of channel 2-1 1232a is different. Channel 2-1 1232a has 1 LED 1220 in intervals R1 to R3, 2 LEDs 1220 in interval R4, 3 LEDs 1220 in intervals R5 and R6, 1 LED 1220 in intervals R7 to R9, 0 LEDs 1220 in interval R10, and 4 LEDs 1220 in interval R11.

[0104] Channel 2-2 1232b includes a light-emitting diode (LED) 1220 disposed in the central region and a light-emitting diode (LED) 1220 disposed in the outer contour region, and includes light-emitting diodes (LEDs) 1220 arranged radially between the central region and the outer contour region, for example, including a total of 11 light-emitting diodes (LEDs) 1220. In channel 2-2 1232b, the multiple light-emitting diodes (LEDs) 1220 are arranged in an inverted "┓" or "T" shape.

[0105] The number of light-emitting diodes (LEDs) 1220 in each of the divided radius intervals of channel 2-2 1232b varies. Channel 2-2 1232b has 1 LED 1220 in intervals R1 and R2, 0 LEDs 1220 in interval R3, 1 LED 1220 in intervals R4 and R5, 0 LEDs 1220 in intervals R6 and R7, 1 LED 1220 in interval R8, 0 LEDs 1220 in interval R9, 2 LEDs 1220 in interval R10, and 4 LEDs 1220 in interval R11.

[0106] Channels 2-1 1232a and 2-2 1232b are similar in that they group the light-emitting diodes (LEDs) 1220 arranged along the radial direction, but the number of LEDs 1220 in their respective radius intervals is different, so the arrangement of the LEDs 1220 is also different, resulting in different light amounts in their respective radius intervals for the two channels 1230.

[0107] The second light-emitting diode (LED) module 1202 includes a second-1 connector 1282a connected to the second-1 channel 1232a and a second-2 connector 1282b connected to the second-2 channel 1232b. The second-1 channel 1232a receives power through the second-1 connector 1282a, while the second-2 channel 1232b receives power through the second-2 connector 1282b.

[0108] Connectors 1282a (2-1) and 1282b (2-2) are located in the non-LED mounting area 1250 within the circuit board 1210. Connectors 1282a (2-1) and 1282b (2-2) are respectively located in a radius range containing the minimum number of LEDs 1220 with ample remaining space. Connector 1282a (2-1) is located between the R7 and R11 ranges, while connector 1282b (2-2) is located between the R7 and R10 ranges. Connector 1282a (2-1) is located to the left of channel 1232a (2-1), while connector 1282b (2-2) is located to the right of channel 1232b (2-2).

[0109] The second light-emitting diode (LED) module 1202 has a recess 1270 on its outer contour, and based on the recess 1270, a second-first channel 1232a and a second-second channel 1232b are respectively divided on the left and right sides. In this way, the second-first channel 1232a and the second-second channel 1232b can be easily divided by the position of the recess 1270.

[0110] Figure 8 is a schematic diagram illustrating the third light-emitting diode (LED) module 1203. Referring to Figure 8, the third light-emitting diode (LED) module 1203 includes multiple channels 1230, preferably including two channels 1230. In Figure 8, the dashed lines are virtual lines used to represent the channels 1230.

[0111] The third light-emitting diode (LED) module 1203 includes a third-first channel 1233a and a third-second channel 1233b. In the region divided by the dashed line in Figure 8, the third-first channel 1233a is located on the left, while the third-second channel 1233b is located on the right. Both the third-first channel 1233a and the third-second channel 1233b include the same number of light-emitting diodes (LEDs) 1220, but are not limited to this.

[0112] Channel 3-1 1233a includes a light-emitting diode (LED) 1220 disposed in the central region and a light-emitting diode (LED) 1220 disposed in the outer contour region, and includes light-emitting diodes (LEDs) 1220 arranged radially between the central region and the outer contour region, for example, including a total of 16 light-emitting diodes (LEDs) 1220. In channel 3-1 1233a, the multiple light-emitting diodes (LEDs) 1220 are arranged in a "┓" or "T" shape as a whole.

[0113] When dividing the radius interval from the inside to the outside of the radial direction, it can be divided into R1 to R11. The number of light-emitting diodes (LEDs) 1220 in each of the divided radius intervals of channel 3-1 1233a is different. Channel 3-1 1233a has 2 light-emitting diodes (LEDs) 1220 in the R1 and R2 intervals respectively, 0 LEDs 1220 in the R3 interval, 1 LED 1220 in the R4 interval, 0 LEDs 1220 in the R5 interval, 1 LED 1220 in the R6 interval, 2 LEDs 1220 in the R7 interval, 3 LEDs 1220 in the R8 and R9 intervals respectively, 0 LEDs 1220 in the R10 interval, and 4 LEDs 1220 in the R11 interval.

[0114] Channel 3-2 1233b includes a light-emitting diode (LED) 1220 disposed in the central region and a light-emitting diode (LED) 1220 disposed in the outer contour region, and includes light-emitting diodes (LEDs) 1220 arranged radially between the central region and the outer contour region, for example, including a total of 11 light-emitting diodes (LEDs) 1220. In channel 3-2 1233b, the multiple light-emitting diodes (LEDs) 1220 are arranged in an inverted "┓" or "T" shape.

[0115] The number of light-emitting diodes (LEDs) 1220 in each of the divided radius intervals of channel 3-2 1233b varies. Channel 3-2 1233b has 1 LED 1220 in interval R1, 0 LEDs 1220 in intervals R2 and R3 respectively, 1 LED 1220 in intervals R4 and R5 respectively, 0 LEDs 1220 in interval R6, 1 LED 1220 in interval R7, 0 LEDs 1220 in interval R8, 1 LED 1220 in interval R9, 2 LEDs 1220 in interval R10, and 4 LEDs 1220 in interval R11.

[0116] Channels 3-1 1233a and 3-2 1233b are similar in that they group the light-emitting diodes (LEDs) 1220 arranged along the radial direction, but the number of LEDs 1220 in their respective radius intervals is different, so the arrangement of LEDs 1220 is also different, resulting in different light amounts in their respective radius intervals for the two channels 1230.

[0117] The third light-emitting diode (LED) module 1203 includes a third connector 1283a connected to the third channel 1233a and a third connector 1283b connected to the third channel 1233b. The third channel 1233a receives power through the third connector 1283a, while the third channel 1233b receives power through the third connector 1283b.

[0118] Connector 3-1 1283a and connector 3-2 1283b are disposed in the non-mounting area 1250 of the light-emitting diode (LED) within the circuit board 1210. Connector 3-1 1283a and connector 3-2 1283b are respectively disposed in the radius range where the minimum number of light-emitting diodes (LEDs) 1220 are arranged and where there is ample remaining space. Connector 3-1 1283a is located between the R1 and R6 ranges, while connector 3-2 1283b is located between the R1 and R9 ranges. Connector 3-1 1283a is disposed to the left of channel 3-1 1233a, while connector 3-2 1283b is disposed to the right of channel 3-2 1233b.

[0119] The third light-emitting diode (LED) module 1203 has a recess 1270 on its outer contour, and based on the recess 1270, a third-first channel 1233a and a third-second channel 1233b are respectively divided on the left and right sides. In this way, the third-first channel 1233a and the third-second channel 1233b can be easily divided by the position of the recess 1270.

[0120] The arrangement of the light-emitting diodes (LEDs) 1220 in channels 1-1, 2-1, 1232, and 3-1, 1233a, can be identical. In contrast, channels 1-2, 1231b, 2-2, and 3-2, 1233b, can have a different arrangement of LEDs 1220 compared to the arrangement in the other channels 1230. In other words, the arrangement of the LEDs 1220 in channels 2-1, 2-2, 1232b, and 3-2, 1233b is different from the arrangement of the LEDs 1220 in any other channel 1230.

[0121] The radius range of one channel 1230 among the multiple channels 1230 differs from that of another channel 1230, resulting in a difference in the number of light-emitting diodes (LEDs) 1220. When dividing the radial direction from the inside to the outside into a central region, a middle region, and an outer region, the first-second channel 1231b has more LEDs 1220 disposed in the central region compared to the second-second channel 1232b and the third-second channel 1233b; the second-second channel 1232b has more LEDs 1220 disposed in the outer region compared to the first-second channel 1231b and the third-second channel 1233b; and the third-second channel 1233b has more LEDs 1220 disposed in the middle region compared to the first-second channel 1231b and the second-second channel 1232b. In this way, at least one of the multiple channels 1230 can compensate for the light quantity of another channel 1230.

[0122] The light distribution generated by channels 1-1 (1231a), 2-1 (1232a), and 3-1 (1233a) is compensated by the light distribution generated by channels 1-2 (1231b), 2-2 (1232b), and 3-2 (1233b), thereby enabling uniform control of the heating temperature of the semiconductor wafer.

[0123] The first light-emitting diode (LED) module 1201 includes a first-1 channel 1231a and a first-2 channel 1231b in a clockwise direction, the second light-emitting diode (LED) module 1202 includes a second-1 channel 1232a and a second-2 channel 1232b in a clockwise direction, and the third light-emitting diode (LED) module 1203 includes a third-1 channel 1233a and a third-2 channel 1233b in a clockwise direction. Multiple light-emitting diode (LED) modules 1200 are arranged in a clockwise direction in the order of first LED module 1201, second LED module 1202, third LED module 1203, and so on. Therefore, when arranged as described above, a total of 12 channels 1230 are provided.

[0124] Channels 1-1a, 1-2b, 2-1a, 2-2b, 3-3a, and 3-2b can be controlled individually. At least a portion of channels 1230 can be controlled to the On state, while the remaining channels 1230 are controlled to the Off state. Alternatively, at least a consecutive portion of the 12 channels 1230 can be controlled to the On state, while the remaining channels 1230 are controlled to the Off state. The number of channels 1230 that are on or off can be selected or changed in order to uniformly heat the semiconductor wafer.

[0125] Channels 1-1a, 1-2b, 2-1a, 2-2b, 3-3a, and 3-2b can be output controlled according to each channel 1230. At least a portion of the outputs of channels 1230 can be controlled to 100%, the outputs of the remaining channels 1230 can be controlled to 50%, and the outputs of the remaining channels 1230 can be controlled to 75%. The degree and number of outputs of each channel 1230 can be selected or changed to achieve uniform heating of the semiconductor wafer.

[0126] In the above description, the first LED module 1201, the second LED module 1202, and the third LED module 1203 of the six LED modules 1200 were used as a reference. However, the remaining LED modules 1200 are the same as the first LED module 1201, the second LED module 1202, and the third LED module 1203 described above, except for the arrangement of the LEDs 1220. Therefore, the specific description will be omitted.

[0127] Referring to Figure 9, the heat sink 1100 is generally formed in a circular shape, with a central hole 1130 in the center and a heat sink recess 1120 on one side of the edge, and a heat sink through hole 1110 inside it.

[0128] The heat sink through hole 1110 is provided at a position corresponding to the through hole 1240 formed on the circuit board 1210.

[0129] The heat sink recess 1120 is provided at a position corresponding to the recess 1270 formed on the circuit board 1210. However, unlike this, as shown in Figures 10 and 11, the heat sink recess 1120 may not be provided on the heat sink 1100.

[0130] The heat sink 1100 includes bolt insertion holes 1140, which allow the heat sink 1100 to be secured to a component located below it by inserting bolts into the bolt insertion holes 1140. Multiple light-emitting diode (LED) modules 1200 are arranged on both sides of the bolt insertion holes 1140 at a distance corresponding to the bolt insertion holes 1140 (see Figure 3).

[0131] The heat sink 1100 may be composed of at least one of water-cooled, air-cooled, and heat dissipation fins. Preferably, the heat sink 1100 may be composed of water-cooled components.

[0132] Next, a modified example of a light-emitting diode (LED) heater system 1000 according to a preferred embodiment of the present invention will be described. However, the modified examples described below will focus on the characteristic components compared to the preferred embodiment, and descriptions related to the same or similar components as those in the embodiment will be omitted as much as possible.

[0133] Figure 10 is a perspective view of a modified light-emitting diode (LED) heater system 1000 according to a preferred embodiment of the present invention, and Figure 11 is a plan view of a modified light-emitting diode (LED) heater system 1000 according to a preferred embodiment of the present invention.

[0134] Figure 10 omits the illustration of the light-emitting diode (LED) 1220 for the sake of simplification, while Figure 11 only shows a portion of the light-emitting diode (LED) 1220.

[0135] According to the modified LED heater system 1000, it is divided into multiple LED modules 1200 and arranged in a circumferential direction. Multiple channels 1230 are used to control multiple LEDs 1220 together by grouping multiple LEDs 1220 arranged in a radial direction in each LED module 1200, and one channel 1230 arranged in the circumferential direction is used to compensate for the control of another channel 1230.

[0136] Unlike the above embodiment where multiple channels 1230 are provided in a single light-emitting diode (LED) module 1200, the modified embodiment differs in that only one channel 1230 is provided in a single LED module 1200. Therefore, in order to achieve a uniform temperature distribution on the semiconductor wafer, it is easier to combine the channels 1230.

[0137] In Figure 11, the area is exemplarily divided into a central region C, a first intermediate region M1, a second intermediate region M2, and an outer region E. However, this is only an example, and as mentioned above, the area can be divided in various ways to achieve a uniform temperature distribution on the semiconductor wafer.

[0138] In the foregoing, preferred embodiments of the present invention have been described. However, those skilled in the art can make various modifications and variations to the present invention without departing from the spirit and scope of the invention as described in the following claims.

[0139] 10: Semiconductor wafer processing equipment 100: Chuck Table 1000: Light Emitting Diode (LED) Heater System 1100: Heat sink 1110: Through hole in heat sink 1120: Recessed part of heat sink 1130: Center hole (central hole of the heat sink) 1140: Bolt insertion hole 1200: Light Emitting Diode (LED) Module 1201: First Light Emitting Diode (LED) Module 1202: Second Light Emitting Diode (LED) Module 1203: Third Light Emitting Diode (LED) Module 1210: Circuit board 1211: Inner arc portion 1212: Outer arc portion 1213: Left radius 1214: Right radius 1220: Light Emitting Diode (LED) 1230: Channel 1231a: Channel 1-1 1231b: Channels 1-2 1232a: Channel 2-1 1232b: Channel 2-2 1233a: Channel 3-1 1233b: Channel 3-2 1240: Through hole 1250: Non-mounting area for light-emitting diodes (LEDs) 1260: Remaining Space 1270: Depression 1280: Connector 1281a: Connector 1-1 1281b: Connector 1-2 1282a: Connector 2-1 1282b: Connector 2-2 1283a: Connector No. 3-1 1283b: Connector 3-2 150: Groove section 170: Chuck pin 180: Support pin 700: Lid W: Semiconductor wafer C: Central Area M1: First Intermediate Area M2: Second Intermediate Area E: Outer region R1~Rn: Radius interval

Claims

1. A light-emitting diode (LED) heater system, used for heating semiconductor wafers, the LED heater system comprising a heat sink and a plurality of LED modules disposed on the heat sink along a circumferential direction, each LED module comprising a circuit board and a plurality of LEDs mounted on the circuit board, each LED module comprising a channel for grouping and controlling the plurality of LEDs disposed along a radial direction, each LED module being formed in a fan shape, and when all the plurality of LED modules are fastened to the heat sink, the whole assembly forms a circular shape.

2. The light-emitting diode (LED) heater system as described in claim 1, each of the LED modules includes an inner arc portion, an outer arc portion, a left radius portion and a right radius portion connecting the inner arc portion and the outer arc portion.

3. The light-emitting diode (LED) heater system as claimed in claim 1, wherein the arrangement of the LEDs on at least one of the plurality of LED modules is different from the arrangement of the LEDs on at least one other LED module.

4. The light-emitting diode (LED) heater system as claimed in claim 1, wherein the arrangement of the LEDs on at least one of the plurality of channels is different from the arrangement of the LEDs on at least one other channel.

5. The light-emitting diode (LED) heater system as described in claim 1, wherein multiple channels can be individually controlled according to each channel.

6. The light-emitting diode (LED) heater system as described in claim 1, wherein multiple channels can be output controlled according to each channel.

7. The light-emitting diode (LED) heater system as described in claim 1, wherein the plurality of channels are controlled in a manner that maintains a uniform heating temperature of the semiconductor wafer.

8. A semiconductor wafer processing apparatus, comprising: A chuck stage is configured to hold semiconductor wafers. In addition, an LED heater system is provided for mounting the semiconductor wafer clamped to the chuck stage by heating it. The LED heater system includes a heat sink and a plurality of LED modules arranged circumferentially on the heat sink. Each LED module includes a circuit board and a plurality of LEDs mounted on the circuit board. Each LED module includes a channel for grouping and controlling the plurality of LEDs arranged radially. Each LED module is formed in a fan shape and forms a circular shape when all the LED modules are fastened to the heat sink.

9. The semiconductor wafer processing apparatus as described in claim 8, wherein the semiconductor wafer is uniformly heated by individually controlling the plurality of channels according to each channel.

10. The semiconductor wafer processing apparatus as claimed in claim 8, wherein the semiconductor wafer is uniformly heated by output control of a plurality of the channels according to each of the channels.

11. The semiconductor wafer processing apparatus as described in claim 8, wherein the heat sink is composed of at least one of water-cooled, air-cooled, and heat sink fins.

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