Methods of forming semiconductor device structures, semiconductor processing systems, and semiconductor device structures

Abstract

A method of forming a structure includes providing a substrate in a reaction chamber, forming a first layer covering the substrate, and forming a second layer on the first layer. The temperature of the first layer is controlled during its formation using infrared electromagnetic radiation emitted by the first layer. The temperature of the second layer is controlled during its formation using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

Description

[Technical Field]

[0001] This disclosure generally relates to the formation of structures. More specifically, this disclosure relates to the structure of a semiconductor device formed using a semiconductor processing system to cover a substrate. [Previous Technology]

[0002] Semiconductor devices (such as transistors) are commonly formed by depositing a film onto a substrate. Deposition is generally achieved by supporting the substrate within a reactor using a substrate holder, exposing the substrate to the precursor, and heating the substrate to a temperature selected to cause film deposition. Typically, the substrate temperature is controlled during deposition to control the deposition rate, thickness, and / or uniformity. The substrate then typically undergoes further processing (e.g., polishing, patterning, etching, etc.) to form the desired features required in the semiconductor device.

[0003] In some film deposition operations, the temperature of the substrate can be controlled by thermocouples or thermocouple arrays. The thermocouples (or thermocouple arrays) are generally located within the reactor and near the substrate holder, and are thermally coupled to the substrate via an intervening structure (such as the substrate holder, a static structure near the substrate holder, and / or a gap defined between the substrate holder and this static structure). This thermal coupling causes temperature changes in the substrate to be transmitted to the thermocouples via the intervening structure, typically based on factors such as temperature differential and the thermal coefficient of the material forming the intervening structure. The thermocouples then report this temperature change, and the heating of the substrate responds appropriately to the reported temperature.

[0004] While such thermocouples and thermocouple arrays are generally satisfactory for their intended purpose, such devices generally provide an indirect control mechanism for temperature control. In this regard, there may be a delay (delay) between the time it takes for the substrate temperature to change and the time it takes for the thermocouple or thermocouple array to know that the substrate temperature has changed. This delay allows the actual temperature to deviate from the desired deposition temperature, potentially inducing a change in film thickness. And while the resulting thickness change is generally small in relatively thick films, it can be relatively large in deposition operations where the deposited film is relatively thin, such as in the fabrication of semiconductor devices with three-dimensional architectures, like finfield field-effect transistors (FFETs) and gate-all-around transistors, in films deposited to form nanosheet stacks.

[0005] Such systems and methods are generally satisfactory for their intended purposes. However, there remains a need for improved methods of forming structures, semiconductor processing systems for forming structures, and semiconductor device structures. This solution provides a solution to this need. [Summary of the Invention]

[0006] A method for forming a structure is provided. The method includes providing a substrate in a reaction chamber, forming a first layer covering the substrate, and forming a second layer onto the first layer. The temperature of the first layer is controlled during its formation using infrared electromagnetic radiation emitted by the first layer. The temperature of the second layer is controlled during its formation using infrared electromagnetic radiation emitted by the second layer.

[0007] In addition to one or more of the features described above, or as an alternative, further examples of this method may include: providing the substrate in the reaction chamber may include optically coupling a pyrometer to one surface of the substrate. Providing the substrate in the reaction chamber may include radiatively coupling a heater element to this surface of the substrate. The pyrometer may be operatively associated with the heater element to control the temperature of the first layer and the second layer during the formation of the first layer and the second layer.

[0008] In addition to one or more of the features described above, or as an alternative, further examples of this method may include: controlling the temperature of the first layer during its formation by receiving infrared electromagnetic radiation emitted by the first layer at a pyrometer, and using the infrared electromagnetic radiation received from the first layer at the pyrometer to determine a first layer temperature. The first layer temperature is compared to a predetermined first layer temperature limit, and when the first layer temperature is outside the predetermined first layer formation temperature limit, the heating of the first layer is increased or decreased.

[0009] In addition to one or more of the features described above, or as an alternative, further examples of this method may include: controlling the temperature of the second layer during its formation by receiving infrared electromagnetic radiation emitted by the second layer at a pyrometer, and using the infrared electromagnetic radiation received from the second layer at the pyrometer to determine a second layer temperature. The second layer temperature is compared to a predetermined second layer temperature limit, and when the second layer temperature is outside the predetermined second layer formation temperature limit, the heating of the second layer is increased or decreased.

[0010] In addition to one or more of the features described above, or as an alternative, a further example of this method may include: thermally conditioning the substrate prior to forming the first layer on the substrate.

[0011] In addition to one or more of the features described above, or as an alternative, further examples of this method may include: thermally adjusting the substrate by receiving infrared electromagnetic radiation emitted by the substrate at a pyrometer; using the infrared electromagnetic radiation received at the pyrometer from the substrate surface to determine a substrate surface temperature; comparing the substrate surface temperature with a predetermined first layer formation temperature limit; and increasing or decreasing the heating of the substrate when the substrate surface temperature is outside the predetermined first layer formation temperature limit. When the substrate surface temperature is within the predetermined first layer formation temperature limit, the formation of the first layer covering the substrate may begin.

[0012] In addition to one or more of the features described above, or as an alternative, further examples of this method may include: thermally conditioning the first layer to include infrared electromagnetic radiation emitted by the first layer at a pyrometer before forming the second layer onto the first layer; using the infrared electromagnetic radiation received from the first layer at the pyrometer to determine a temperature of the first layer; and comparing the temperature of the first layer with a predetermined second layer forming temperature limit. When the temperature of the first layer is outside the predetermined second layer forming temperature limit, the heating of the first layer may be increased or decreased, and when the surface temperature of the first layer is within the predetermined second layer forming temperature limit, the formation of the second layer onto the first layer is initiated.

[0013] In addition to one or more of the features described above, or as an alternative, further examples of this method may include: forming the first layer comprises providing a first layer precursor to the reaction chamber, the first layer precursor comprising one or more of dichlorosilane (H2SiCl2), silane (SiH4), hydrochloric acid (HCl), and germanane (GeH4).

[0014] In addition to one or more of the features described above, or as an alternative, further examples of this method may include: forming the first layer comprising maintaining the pressure of forming the first layer in the reaction chamber between about 2 torr and about 80 torr, or between about 4 torr and about 60 torr, or between about 5 torr and about 40 torr.

[0015] In addition to one or more of the features described above, or as an alternative, further examples of this method may include: forming the first layer includes maintaining the first layer within a predetermined first layer forming temperature limit, which is between about 500°C and about 750°C, or between about 600°C and about 700°C, or between about 620°C and about 680°C.

[0016] In addition to one or more of the features described above, or as an alternative, further examples of this method may include: forming the first layer includes a first layer forming interval, the first layer forming interval being between about 10 seconds and about 50 seconds, or between about 10 seconds and about 40 seconds, or between about 16 seconds and about 26 seconds.

[0017] In addition to one or more of the features described above, or as an alternative, further examples of this method may include: forming the second layer includes providing a second layer precursor to the reaction chamber, the second layer precursor comprising one or more of silane (SiH4), dichlorosilane (H2SiCl2), disilane (Si2H6), and trisilane (Si3H8).

[0018] In addition to one or more of the features described above, or as an alternative, further examples of this method may include: forming the second layer comprising maintaining the pressure of forming the second layer in the reaction chamber between about 2 Torr and about 80 Torr, or between about 4 Torr and about 60 Torr, or between about 5 Torr and about 40 Torr.

[0019] In addition to one or more of the features described above, or as an alternative, further examples of this method may include: forming the second layer includes maintaining the second layer at a predetermined second layer forming temperature limit, the predetermined second layer forming temperature limit being between about 600°C and about 800°C, or between about 600°C and about 750°C, or between about 640°C and about 700°C.

[0020] In addition to one or more of the features described above, or as an alternative, further examples of this method may include: forming the second layer includes a second layer forming interval, the second layer forming interval being between about 10 seconds and about 50 seconds, or between about 14 seconds and about 40 seconds, or between about 16 seconds and about 26 seconds.

[0021] In addition to one or more of the features described above, or as an alternative, a further example of this method may include: the first layer and the second layer forming a first layer pair, the method further comprising forming at least one second layer pair having a third layer and a fourth layer onto the first layer pair, the third layer being formed onto the second layer and being the same as the first layer, and the fourth layer being formed onto the third layer and being the same as the second layer.

[0022] A semiconductor processing system is also provided. This semiconductor processing system includes a reaction chamber configured for forming a structure on a substrate, a pyrometer optically coupled to the substrate, a heater element radiatively coupled to the substrate, and a controller. The controller is configured to communicate with the pyrometer and operatively connected to the heater element. The controller responds to instructions recorded in a non-transitory machine-readable memory to perform certain operations, including: forming a first layer overlying the substrate; controlling the temperature of the substrate using infrared electromagnetic radiation emitted by the first layer during the formation of the first layer; forming a second layer on the first layer; and controlling the temperature of the substrate using infrared electromagnetic radiation emitted by the second layer during the formation of the second layer.

[0023] In addition to one or more of the features described above, or as an alternative, further examples of this system may include: such instructions further causing the controller to use the infrared electromagnetic radiation received at the pyrometer from the first layer to determine a first layer temperature, compare the first layer temperature with a predetermined first layer temperature limit; and when the first layer temperature is outside the predetermined first layer temperature limit, increase or decrease the heating of the first layer.

[0024] In addition to one or more of the features described above, or as an alternative, further examples of this system may include: such instructions further causing the controller to use the infrared electromagnetic radiation received from the second layer at the pyrometer to determine a second layer temperature, compare the second layer temperature with a predetermined second layer temperature limit, and increase or decrease the heating of the second layer when the second layer temperature is outside the predetermined second layer temperature limit.

[0025] In addition to one or more of the features described above, or as an alternative, further examples of this system may include: the pyrometer being optically coupled to the first layer during the formation of the first layer, the pyrometer being optically coupled to the second layer during the formation of the second layer, and the system further including a thermocouple disposed on the side of the substrate opposite to the pyrometer.

[0026] A semiconductor device structure is provided, having a fin field-effect transistor or a gate-all-around architecture. This semiconductor device structure is formed using the method described above.

[0027] In addition to one or more of the features described above, or as an alternative, a further example of this semiconductor device structure may include: the semiconductor device structure is a nanosheet stack.

[0028] In addition to one or more of the features described above, or as an alternative, a further example of this semiconductor device structure may include: the semiconductor device structure having a plurality of layer pairs having a thickness between about 50 nanometers and 5 nanometers.

[0029] In addition to one or more of the features described above, or as an alternative, further examples may include: the semiconductor device structure having a silicon-germanium layer covering the substrate, and a silicon layer formed on the silicon-germanium layer.

[0030] In addition to one or more of the features described above, or as an alternative, further examples of this system may include. This disclosure is provided to introduce a series of concepts in a simplified form. These concepts will be described in further detail in the following exemplary embodiments of this disclosure. This disclosure is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

Implementation Method

[0033] Reference will now be made to the accompanying drawings, wherein similar element symbols identify similar structural features or configurations disclosed herein. For purposes of explanation and illustration and not limitation, partial views of an example of a semiconductor processing system according to this disclosure are shown in Figure 1 and are generally designated by reference character 100. As will be described, Figures 2 through 12 provide other embodiments, or configurations, of the semiconductor processing system, semiconductor device structure, and methods of forming the structure. The systems and methods disclosed herein can be used to form film stack structures of alternating pairs of layers with different compositions, such as nanosheet stacks of alternating silicon-germanium and silicon layers formed during the fabrication of semiconductor device structures having fin field-effect transistors or gate-all-around (GAA) architectures, although this disclosure is generally not limited to any particular film or architecture.

[0034] Referring to Figure 1, a semiconductor processing system 100 is shown. The semiconductor processing system 100 includes a gas delivery system 102, an injection flange 104, and an exhaust flange 106. The semiconductor processing system 100 also includes a reaction chamber 108, one or more thermocouples 110, and a pyrometer 112. The semiconductor processing system 100 further includes a heater element 114, a controller 116, and a wired or wireless connection 118. Although the semiconductor processing system 100 is shown as having a specific type of reaction chamber, such as a cross-flow cold-wall reactor, it should be understood and appreciated that other types of reaction chambers and semiconductor processing systems may also benefit from this disclosure.

[0035] The gas delivery system 102 includes a first-layer precursor source 120 and a second-layer precursor source 122. The first-layer precursor source 120 is fluidly coupled to the reaction chamber 108 via an injection flange 104 and is configured to allow the first-layer precursor 10 (shown in Figure 3) to flow to the injection flange 104. The second-layer precursor source 122 is also fluidly coupled to the reaction chamber 108 via the injection flange 104 and is configured to allow the second-layer precursor 12 (shown in Figure 5) to flow to the injection flange 104. In some embodiments, the injection flange 104 may be configured to mix two or more precursors together before introducing the precursors into the reaction chamber 108.

[0036] The reaction chamber 108 may be formed from a transmissive material (such as quartz) and has an injection end 124 and an opposing exhaust end 126. An exhaust flange 106 is connected to the exhaust end 126 of the reaction chamber 108 and is configured to fluidly couple the reaction chamber 108 to an exhaust source. An injection flange 104 is connected to the injection end 124 of the reaction chamber 108, couples the gas delivery system 102 to the reaction chamber 108, and is configured to mix the precursors received from the gas delivery system 102 into the interior 128 of the reaction chamber 108. A shelf 130, a single-piece ring 132, a base 134, and a spider 136 are each disposed within the interior 128 of the reaction chamber 108.

[0037] The shelf 130 and the single-piece ring 132 are fixed within the interior 128 of the reaction chamber 108, dividing the interior 128 of the reaction chamber 108 into an upper chamber 138 and a lower chamber 140. The shelf 130 is disposed between the single-piece ring 132 and the injection flange 104, and may be formed from a transmissive material (such as quartz). The single-piece ring 132 is fixed between the shelf 130 and the venting flange 106, and may be formed from an opaque material (such as graphite). In some embodiments, the shelf 130 may be a first shelf 130, and a second shelf 142 may be fixed within the reaction chamber 108 at a location between the single-piece ring 132 and the venting flange 106. The second shelf 142 may also be formed from a transmissive material (such as quartz).

[0038] The single-piece ring 132 has a single-piece ring hole 144 extending through it, coupling the upper chamber 138 to the lower chamber 140. A base 134, disposed within the single-piece ring hole 144, may be formed from an opaque material (such as graphite) and is rotatably fixed relative to the multi-legged mount 136. The multi-legged mount 136, formed from a transmissive material (such as quartz), connects the base 134 to a shaft 146 and is rotatably fixed relative to the shaft 146. The shaft 146 is supported for rotation R about a rotation axis 148, extending through the wall of the reaction chamber 108 and operatively associated with a drive module 150 for rotating the base 134. It is envisioned that the base 134 is configured to support the substrate 14 (e.g., a wafer formed from a semiconductor material such as silicon) on the base during the deposition of layer pairs (e.g., first layer 20 (shown in Figure 3) and second layer 22 (shown in Figure 5)) onto the surface 18 of the substrate 14.

[0039] One or more thermocouples 110 are configured to communicate with a controller 116 via a wired or wireless connection 118, and are supported by a base 134, and are arranged to generate thermocouple signals indicating a local temperature within the reaction chamber 108 (e.g., at the location of one or more thermocouples 110). In this respect, one or more thermocouples 110 are thermally coupled to the surface 18 of the substrate 14 by means of both the thermal mass of the substrate 14 and a portion of the thermal mass of the base 134. In some embodiments, one or more thermocouples 110 may be one of those located inside the reaction chamber 108 and one of those in an array of thermocouples arranged around the base 134. As those skilled in the art will understand from this disclosure, the thermocouple signals may therefore exhibit a delay corresponding to the intermediate thermal mass when the temperature at the surface 18 of the substrate 14 changes, such as when the mass flow rate of the exothermic reactant increases or decreases through the upper chamber 138.

[0040] The pyrometer 112 is configured to communicate with the controller 116 via a wired or wireless connection 118, is optically coupled to the reaction chamber 108, and is configured to determine the temperature based on the infrared electromagnetic radiation received by the pyrometer 112. The pyrometer 112 is further disposed outside the reaction chamber 108 and spaced apart from the base 134 by the upper chamber 138 of the reaction chamber 108. In some embodiments, the pyrometer 112 may cover the base 134. According to some embodiments, the pyrometer 112 may cover the center (above) of the substrate 14 (shown in Figure 3), for example, such that the axis of rotation 138 intersects with the pyrometer 112. In this regard, the pyrometer 112 is configured to directly receive infrared electromagnetic radiation 30 (shown in Figure 2) emitted from the surface 18 (shown in Figure 2) of the substrate 14 (shown in Figure 2), infrared electromagnetic radiation 32 (shown in Figure 3) emitted from the first layer 20 (shown in Figure 3), and infrared electromagnetic radiation 34 (shown in Figure 5) emitted from the second layer 22 (shown in Figure 5) during the formation of the layer. It is envisioned that the pyrometer 112 can be substantially orthogonal to the surface 18 of the substrate 14.

[0041] The heater element 114 is operatively associated with the controller 116, for example via a wired or wireless connection 118, and thereby operatively associated with the pyrometer 112, and radially coupled to the reaction chamber 108. The heater element 114 may be radially coupled to a structure located within the reaction chamber 108. For example, the heater element 114 may be radially coupled to the single-piece ring 132, the base 134, and / or the substrate 14 for heating the substrate 14, for example, during the deposition of the first layer 20 (shown in Figure 3) and the second layer 22 (shown in Figure 4) onto the substrate 14. In some embodiments, the heater element 114 may be one of a plurality of heater elements disposed in a lower heater element array 152 located outside the reaction chamber 108 and spaced apart from the base 134 by the lower chamber 140. According to certain examples, heater element 114 may be one of a plurality of heater elements disposed in an upper heater element array 154, which is located outside the reaction chamber 108 and spaced apart from the base 134 by the upper chamber 138. Heater element 114 may include a heat lamp or elongated filament type heater element.

[0042] The controller 116 is configured to communicate with the thermocouple 110 and the pyrometer 112, is operatively connected to the heater element 114, and includes a processor 156, a device interface 158, a user interface 160, and a memory 162. The device interface 158 connects the processor 156 to a wired or wireless connection 118, and thereby connects the processor to the thermocouple 110 and the pyrometer 112. The device interface 158 also connects the controller 116 to the heater element 114 for operative connection thereto. The processor 156 is operatively connected to the user interface 160 and configured to communicate with the memory 162. The memory 162 includes a non-transitory machine-readable medium and has a plurality of program modules 164 containing instructions that, when read by the processor 156, cause the processor to perform certain operations. Among these operations are the operations of a method 200 for forming a structure (shown in Figure 5), as will be described.

[0043] As explained above, the temperature of substrate 14 can be controlled using thermocouple 110 (e.g., via thermocouple temperature signal). While temperature control using thermocouple 110 is generally satisfactory for the intended purposes, the thermal mass of substrate 134 and substrate 14 can delay indication of temperature changes at surface 18 of substrate 14 in some reaction chambers due to the intermediate thermal mass of substrate 14 and substrate 134, potentially causing heating compensation for lag temperature at substrate surface during layer formation on substrate, especially in deposition operations where the deposited layer is relatively thin, such as in nanosheet stacks. To limit (or eliminate) such lag, controller 116 is configured to control the temperature of substrate 14 using pyrometer 112 using infrared electromagnetic radiation emitted by one or more of the surface 18 of substrate 14, first layer 20, and second layer 22.

[0044] Referring to Figures 1 through 5, an example of a structure comprising a first layer 20 (shown in Figure 3) and a second layer 22 (shown in Figure 4) formed using temperature control with a pyrometer is shown. As shown in Figure 1, the formation of the structure begins by providing a substrate 14 in a reaction chamber 108. In this respect, the substrate 14 is positioned within the interior 128 of the reaction chamber 108 and supported on a base 134. It is contemplated that positioning the substrate 14 within the reaction chamber 108 allows the heater element 114 to be radiatively coupled to the substrate 14. It is also contemplated that positioning the substrate 14 on the base 134 allows the pyrometer 112 to be optically coupled to the upper surface 18 of the substrate 14. In some embodiments, the substrate 14 may be a blanket-covered substrate. According to some embodiments, the substrate may be a patterned substrate. It is also contemplated that the substrate may comprise a wafer (such as a silicon wafer) formed from a semiconductor material.

[0045] As shown in Figure 2, the substrate 14 is then thermally conditioned for forming the first layer 20 (shown in Figure 3) onto the surface 18 of the substrate 14. The thermal conditioning of the substrate 14 is achieved by receiving infrared electromagnetic radiation 30 emitted from the surface 18 of the substrate 14 at a pyrometer 112, determining the surface temperature 24 of the substrate 14 using the infrared electromagnetic radiation 30 emitted from the surface 18 of the substrate 14, and comparing the surface temperature 24 with a predetermined first layer formation temperature. Based on the comparison between the surface temperature 24 and the predetermined first layer formation temperature limit, the heating of the substrate 14 is increased or decreased using a heating element 114, and the surface temperature 24 is again compared with the predetermined first layer formation temperature limit. When the surface temperature 24 is within the predetermined first layer formation temperature limit, the formation of the first layer 20 (shown in Figure 3) begins. As will be appreciated by those skilled in the art in light of this disclosure, direct observation of the surface 18 of the substrate 14 from above by means of the pyrometer 112 can provide greater accuracy in terms of control of the surface temperature 24 provided by the pyrometer 110, for example, by means of a near (or actual) real-time temperature indication at the surface 18 of the substrate 14, provided by limiting a delay, which in other cases may be associated with dependence on the temperature change signaled by the thermal mass of the substrate 14 and the base 134.

[0046] In some embodiments, the surface 18 of the heating substrate 14 may be achieved by increasing or decreasing the electrical power applied to the heater element 114. According to some embodiments, the surface temperature 24 is determined by a pyrometer 112 and communicated to a controller 116 (shown in Figure 1). In such embodiments, the controller 116 may compare the surface temperature 24 with a predetermined first layer formation temperature limit and increase or decrease the electrical power applied to the heater element 114 based on the comparison of the surface temperature 24 with the predetermined first layer formation temperature limit. The predetermined first layer formation temperature limit may then be received from another device, for example, via a device interface 158 (shown in Figure 1) or via a user interface 160 (shown in Figure 1). It is also contemplated that the predetermined first layer formation temperature target may also be retrieved from the memory 162 (shown in Figure 1) of the controller 116.

[0047] As shown in Figure 3, the first layer 20 is subsequently formed over the substrate 14 by providing the first layer precursor 10 to the reaction chamber 108. In some embodiments, during the formation of the first layer 20, the pressure within the interior 128 of the reaction chamber 108 can be maintained within a predetermined first layer formation pressure limit. According to some embodiments, during the formation of the first layer 20, the temperature of the first layer 20 (and / or the substrate 14) can be maintained within a predetermined first layer formation temperature limit. It is also contemplated that, according to some embodiments, the first layer 20 can be formed during a predetermined first layer formation interval.

[0048] When the first layer 20 is formed over the substrate 14, the first layer temperature 26 of the first layer 20 is controlled using infrared electromagnetic radiation 32 emitted by the first layer 20. In this regard, it is envisioned that the infrared electromagnetic radiation 32 emitted by the first layer 20 during the formation of the first layer 20 is received at the pyrometer 112, and the first layer temperature 26 is determined using the infrared electromagnetic radiation 32 emitted by the first layer 20, and the first layer temperature 26 is compared with a predetermined first layer formation temperature limit. Based on the comparison between the first layer temperature 26 and the predetermined first layer formation temperature limit, the heating element 114 is appropriately used during the formation of the first layer 20 to increase or decrease the heating of the first layer 20 (and / or the substrate 14) based on this comparison. As described above, direct observation of the first layer 20 from above the surface 18 of the substrate 14 by the pyrometer 112 can provide greater accuracy in controlling the temperature 26 of the first layer, for example by providing substantially real-time indication of temperature changes at the surface of the first layer 20 during the formation of the first layer 20, provided by limiting a delay, which in other cases may be related to the dependence on the temperature changes signaled by the thermal mass of the substrate 14 and the base 134.

[0049] In some embodiments, heating the first layer 20 may be achieved by increasing or decreasing the electrical power applied to the heater element 114. According to some embodiments, the first layer temperature 26 may be determined by the pyrometer 112 and communicated to the controller 116 (shown in Figure 1). In such embodiments, the controller 116 may compare the first layer temperature 26 with a predetermined first layer forming temperature limit, and the controller 116 may further increase or decrease the electrical power applied to the heater element 114 based on this comparison of the first layer temperature 26 with the predetermined first layer forming temperature limit.

[0050] As shown in Figure 4, once the first layer 20 is formed, the flow of the first layer precursor 10 to the reaction chamber 108 is terminated, and the first layer 20 is thermally regulated to form the second layer 22 (shown in Figure 5) onto the first layer 20. The thermal regulation of the first layer 20 is achieved by receiving infrared electromagnetic radiation 32 emitted by the first layer 20 at a pyrometer 112, determining the first layer temperature 26 using the infrared electromagnetic radiation 32 emitted by the first layer 20, and comparing the first layer temperature 26 with a predetermined second layer formation temperature. Based on the comparison between the first layer temperature 26 and the predetermined second layer formation temperature limit, the heating of the first layer 20 can be increased or decreased using a heating element 114, and the first layer temperature 26 can then be compared with the predetermined second layer formation temperature limit again. Once the first layer temperature 26 is within the predetermined second layer formation temperature limit, the formation of the second layer 22 begins. As described above, direct observation of the first layer 20 from above the surface 18 of the substrate 14 by the pyrometer 112 can provide greater accuracy in controlling the temperature 26 of the first layer, for example by providing a substantially real-time indication of temperature changes at the surface of the first layer 20, provided by limiting a delay, which in other cases may be related to the dependence on the temperature change signaled by the thermal mass of the substrate 14 and the base 134.

[0051] In some embodiments, the thermal regulation of the first layer 20 used to form the second layer 22 can be achieved by increasing or decreasing the electrical power applied to the heater element 114. According to some embodiments, the first layer temperature 26 can be determined by the pyrometer 112 and communicated to the controller 116 (shown in Figure 1). In such embodiments, the controller 116 can compare the first layer temperature 26 with a predetermined second layer forming temperature limit, and the controller 116 can further increase or decrease the electrical power applied to the heater element 114 based on this comparison between the first layer temperature 26 and the predetermined first layer forming temperature limit. The predetermined second layer forming temperature limit can then be received from another device, for example, via device interface 158 (shown in Figure 1) or via user interface 160 (shown in Figure 1). It is also contemplated that the predetermined second layer forming temperature target can also be retrieved from the memory 162 (shown in Figure 1) of the controller 116.

[0052] As shown in Figure 5, the second layer 22 is subsequently formed on the first layer 20 by providing the second layer precursor 12 to the reaction chamber 108. In some embodiments, during the formation of the second layer 22, the pressure within the interior 128 of the reaction chamber 108 can be maintained within a predetermined first layer formation pressure limit. According to some embodiments, during the formation of the second layer 22, the temperature of the second layer 22 can be maintained within a predetermined second layer formation temperature limit. It is also contemplated that, according to some embodiments, the second layer 22 is formed during a predetermined second layer formation interval.

[0053] When the second layer 22 is formed on the first layer 20, the second layer temperature 28 of the second layer 22 is controlled using the infrared electromagnetic radiation 34 emitted by the second layer 22. In this regard, it is envisioned that the infrared electromagnetic radiation 34 emitted by the second layer 22 during the formation of the second layer 22 is received at the pyrometer 112, and the second layer temperature 28 is determined using the infrared electromagnetic radiation 34 emitted by the second layer 20, and the second layer temperature 28 is compared with a predetermined second layer formation temperature limit. Based on the comparison between the second layer temperature 28 and the predetermined second layer formation temperature limit, the heating element 114 can be appropriately used to increase or decrease the heating of the second layer 22 during the formation of the second layer 22 based on this comparison. As mentioned above, direct observation of the second layer 22 from above during its formation by the pyrometer 112 can provide greater accuracy in controlling the temperature 28 of the second layer, for example by providing substantially real-time indication of temperature changes at the surface of the second layer 22 during its formation, provided by limiting a delay, which in other cases may be related to the dependence on the temperature changes signaled by the thermal mass of the substrate 14 and the base 134.

[0054] In some instances, heating the second layer 22 may be achieved by increasing or decreasing the electrical power applied to the heater element 114. According to some instances, the second layer temperature 28 may be determined by a pyrometer 112 and communicated to a controller 116 (shown in Figure 1). In such instances, the controller 116 may compare the second layer temperature 28 with a predetermined second layer formation temperature limit, and the controller 116 may further increase or decrease the electrical power applied to the heater element 114 based on this comparison. Once the second layer 22 is formed, the flow of the second layer precursor 12 to the reaction chamber 108 is terminated. The second layer 22 may then be thermally conditioned using a pyrometer to form one or more further layers covering the second layer 22, as appropriate for the desired application of the resulting film stack. Although a certain number of layers are shown in Figures 2 through 5, it should be understood and appreciated that examples of film stacks formed according to this disclosure may have more than two layers and remain within the scope of this disclosure.

[0055] Advantageously, as those skilled in the art will understand from this disclosure, the determination of the first layer temperature 26 (shown in Figure 3) and the second layer temperature 28 by the pyrometer 112 can limit the delay in reporting and compensating for temperature changes during the deposition of the first layer 20 and the second layer 22, a delay otherwise inherited from temperature control using the thermocouple 110. Without being limited to any particular theory, it is believed that when temperature is controlled using the thermocouple 110, the delay associated with communication via the substrate 14 and the base 134 regarding temperature changes at the first layer 20 and / or the second layer 22 can impart interlayer thickness variations during the formation of some structures that are greater than the interlayer thickness variations that might occur when temperature is controlled using the pyrometer 112 in other cases. Although such changes are typically relatively small, the instantaneous temperature reports available from the pyrometer 112 can limit interlayer variations, especially on substrates exhibiting relatively low emissivity changes during heating (such as unpatterned blanket substrates). This allows the reaction chamber 108 to form structures that are not tolerant of such changes, such as semiconductor device structures formed from nanosheet stacks, such as semiconductor device structures with fin field-effect transistors or all-around gate architectures.

[0056] In some instances, the first layer precursor 10 may include one or more of dichlorosilane (H2SiCl2), silane (SiH4), germanane (GeH4), and hydrochloric acid (HCl). According to some instances, the predetermined first layer formation pressure may be between about 2 Torr and about 80 Torr, or between about 4 Torr and about 60 Torr, or between about 5 Torr and about 40 Torr. It is envisioned, according to some instances, that the predetermined first layer formation interval may be between about 10 seconds and about 50 seconds, or between about 10 seconds and about 40 seconds, or between about 16 seconds and about 26 seconds. It is also envisioned, according to some instances, that the predetermined first layer formation temperature may be between about 500°C and about 750°C, or between about 600°C and about 700°C, or between about 620°C and about 680°C. The formation of the first layer 20 under these process conditions allows the first layer 20 to be formed as a nanosheet.

[0057] In some instances, the second layer precursor 12 may include one or more of silane (SiH4), dichlorosilane (H2SiCl2), disylane (Si2H6), and trisilane (Si3H8). According to some instances, the predetermined second layer formation pressure may be between about 2 Torr and about 80 Torr, or between about 4 Torr and about 60 Torr, or between about 5 Torr and about 40 Torr. It is envisioned, according to some instances, that the predetermined second layer formation interval may be between about 10 seconds and about 50 seconds, or between about 14 seconds and about 40 seconds, or between about 16 seconds and about 26 seconds. It is also envisioned, according to some instances, that the predetermined second layer formation temperature may be between about 600°C and about 800°C, or between about 600°C and about 750°C, or between about 640°C and about 700°C. Forming the second layer 22 under these process conditions allows the second layer 22 to be formed as a nanosheet. In some instances, forming the second layer 22 as a nanosheet while using a pyrometer 112 to control the temperature allows the in-wafer thickness variation of the second layer 22 to be less than half of the in-wafer thickness variation when a thermocouple 110 is used for temperature control.

[0058] Referring to Figures 6 through 10, a method 200 for forming a cover substrate structure is shown, for example, a first layer 20 (shown in Figure 3) and a second layer 22 (shown in Figure 5) of a cover substrate 14 (shown in Figure 2). As shown in block 210, a (supporting) substrate is first provided in a reaction chamber (e.g., reaction chamber 108 (shown in Figure 1)). Then, a pyrometer (e.g., pyrometer 112 (shown in Figure 1)) is optically coupled to the substrate surface, as shown in block 212. Subsequently, a heater element (e.g., heater element 114 (shown in Figure 1)) is radially coupled to the substrate, and a thermally modulating substrate is used to form the first layer on the substrate, as shown in blocks 214 and 220. The first layer is then formed on the substrate, as shown in block 240. Once the first layer is formed on the substrate, the first layer (and / or the substrate) is thermally modified to form the second layer onto the first layer, as shown in block 260, and the second layer is subsequently formed onto the first layer, as shown in block 280.

[0059] In some embodiments, the thermal conditioning 220 substrate used for forming the first layer may include controlling the temperature of the substrate (e.g., surface 18 (shown in Figure 1)) using infrared electromagnetic radiation emitted by the substrate, as shown in block 230. According to some embodiments, forming the first layer on the substrate may include controlling the temperature of the first layer (and / or the underlying substrate) using electromagnetic radiation emitted by the first layer, as shown in block 250. It is contemplated that the thermal conditioning 260 substrate used for forming the second layer may include controlling the temperature of the first layer (and / or the underlying substrate) using infrared electromagnetic radiation emitted by the first layer, as shown in block 270. It is also contemplated that forming the second layer 280 onto the first layer may include controlling the temperature of the second layer during the formation of the second layer using electromagnetic radiation emitted by the second layer, as shown in block 290. In a further example, the first layer and the second layer may be a first pair, and one or more second layer pairs may be formed on this first layer pair, for example, to form a nanosheet stack with a semiconductor device structure having a three-dimensional architecture (such as a fin field-effect transistor architecture or a gate-all-around architecture), as shown by arrow 216.

[0060] As shown in Figure 7, controlling the temperature of substrate 230 during the formation of the first layer may include receiving infrared electromagnetic radiation emitted by the surface of the substrate (e.g., surface 18 (shown in Figure 2)) at a pyrometer, as shown in block 232. The surface temperature of the substrate can be determined using the infrared electromagnetic radiation emitted by the surface of the substrate and received by the pyrometer, and compared with a predetermined first layer formation temperature limit, as shown in blocks 234 and 236. When the determined surface temperature is outside the predetermined first layer formation temperature limit, the heating of the substrate can be increased or decreased based on the difference between the determined surface temperature and the predetermined first layer formation temperature limit, for example, by increasing (or decreasing) the electrical power applied to one or more heater elements 114 (shown in Figure 1), as shown in arrows 238 and 231, and the temperature is checked again, as shown in arrow 233. When the determined surface temperature is within the predetermined first layer formation temperature limit, the formation of the first layer can begin, as shown in arrows 235 and 240. Forming the first layer may include providing a first layer precursor to the reaction chamber, such as first layer precursor 10 (shown in Figure 1), as shown in block 242. Forming the first layer may include maintaining the pressure within the reaction chamber at a predetermined first layer forming pressure, as shown in block 244. Forming the first layer may include forming the first layer during a predetermined first layer forming interval, as shown in block 246.

[0061] As shown in Figure 8, controlling the temperature of the first layer 250 during the formation of the first layer may include receiving infrared electromagnetic radiation emitted by the first layer at a pyrometer during the formation of the first layer, such as infrared electromagnetic radiation 32 (shown in Figure 3), as shown in block 252. The temperature of the first layer can be determined using the infrared electromagnetic radiation received by the pyrometer, for example, the first layer temperature 26 (shown in Figure 3), and the determined first layer temperature is compared with a predetermined first layer temperature limit, as shown in blocks 254 and 256. When the determined first layer temperature is outside the predetermined first layer formation temperature limit, the heating of the first layer (and / or the underlying substrate) can be increased or decreased, for example, using a heater element 114 (shown in Figure 1), as shown in arrows 258 and block 251. The first layer temperature can then be checked, compared with the predetermined first layer formation temperature limit, and the heating of the first layer (and / or the underlying substrate) can be further adjusted as appropriate, as shown in arrow 257. When the determined temperature of the first layer is within the predetermined temperature limit for the formation of the first layer, the temperature of the first layer can be monitored by a pyrometer, for example by repeatedly determining the temperature of the first layer using infrared electromagnetic radiation received by the pyrometer, as shown by arrow 253.

[0062] As shown in Figure 9, controlling the temperature of substrate 270 to thermally regulate the substrate for forming a second layer onto the first layer may include receiving infrared electromagnetic radiation from the first layer at a pyrometer once the formation of the first layer is substantially complete, as shown in block 272. The temperature of the substrate may be determined using the infrared electromagnetic radiation emitted by the first layer and received by the pyrometer, and the temperature of the first layer may be compared with a predetermined second layer temperature limit, as shown in blocks 274 and 276. When the determined first layer temperature is outside the predetermined second layer formation temperature limit, the heating of the first layer (and / or the underlying substrate) may be increased or decreased based on the difference between the determined first layer temperature and the predetermined second layer formation temperature limit, for example, by increasing (or decreasing) the electrical power applied to one or more heater elements 114 (shown in Figure 1), as shown in arrows 278 and 271, and then the temperature may be checked again, as shown in arrow 273. When the determined temperature of the first layer is within the predetermined temperature limit for forming the second layer, the formation of the second layer 280 may begin, as indicated by arrow 275 and block 280. Forming the second layer 280 may include providing a second layer precursor to the reaction chamber, for example, second layer precursor 12 (shown in Figure 1), as indicated by block 282. Forming the second layer 280 may include maintaining the pressure within the reaction chamber at a predetermined pressure for forming the second layer, as indicated by block 284. Forming the second layer 280 may include forming the second layer during a predetermined second layer formation interval, as indicated by block 286.

[0063] As shown in Figure 10, controlling the temperature of the substrate 290 during the formation of the second layer 280 may include receiving infrared electromagnetic radiation from the second layer at a pyrometer, for example, infrared electromagnetic radiation 34 (shown in Figure 5) from the second layer 22 (shown in Figure 5), as shown in block 292. The temperature of the second layer can be determined using the infrared electromagnetic radiation emitted by the second layer and received by the pyrometer, for example, the second layer temperature 28 (shown in Figure 5), and the determined second layer temperature is compared with a predetermined second layer formation temperature limit, as shown in blocks 294 and 296. It is envisioned that when the determined second layer temperature is outside the predetermined second layer formation temperature limit, the second layer (and / or the underlying substrate) may be increased or decreased, for example, using a heater element 114 (shown in Figure 1), as shown in arrows 298 and 291. The second layer temperature may then be determined again and compared with the predetermined second layer formation temperature limit, and the heating of the second layer may be further adjusted as appropriate, as shown in arrow 297. It has also been envisioned that when the temperature of the second layer is within the predetermined temperature limit for the formation of the second layer, the temperature of the second layer can be monitored by a pyrometer, for example, by repeatedly determining the temperature of the first layer using infrared electromagnetic radiation received by the pyrometer, as shown by arrow 293.

[0064] Referring to Figure 11, an example of a structure (e.g., semiconductor device structure 300) formed using method 200 (shown in Figure 6) is shown. The semiconductor device structure 300 includes a substrate 14, a first layer pair 302, a second layer pair 304, and one or more third layer pairs 306 formed using method 200 (shown in Figure 6). In this regard, the first layer pair 302 includes a first silicon-germanium layer 308 covering the substrate 14 and a first silicon layer 310 formed on the first silicon-germanium layer 308; the second layer pair 304 includes a second silicon-germanium layer 312 formed on the first silicon layer 310 and a second silicon layer 314 formed on the second silicon-germanium layer 312; and the third layer pair 306 includes a third silicon-germanium layer 316 formed on the second silicon layer 314 and a third silicon layer 318 formed on the third silicon-germanium layer 316. A fourth silicon-germanium layer 320 is then formed on the third silicon layer 318.

[0065] In some instances, the semiconductor device structure 300 is a nanosheet stack for a semiconductor device structure with a fin field-effect transistor having a gate-all-around architecture. For example, the layers of the first layer pair 302 and the second layer pair 304 may have a thickness of less than 50 nanometers, or less than 25 nanometers, or less than 10 nanometers, or even less than 5 nanometers. The layers of the first layer pair 302 and the second layer pair 304 may have a thickness between about 50 nanometers and about 5 nanometers. According to some instances, each of these layers may be formed sequentially within the reaction chamber 108 (shown in Figure 1), i.e., without removing the substrate 14 from the reaction chamber 108. It is envisioned that a semiconductor device structure having a fin field-effect transistor or a gate-all-around architecture, including one or more of these layer pairs, such as the first layer pair 302, the second layer pair 304, and / or the third layer pair 306, may subsequently be formed. Examples of suitable fin field-effect transistor devices include those shown and described in U.S. Patent No. 8,895,395 to Kerber et al., issued November 25, 2014, the contents of which are incorporated herein by reference in their entirety. Examples of suitable all-around gate semiconductor device structures include those shown and described in U.S. Patent No. 8,969,934 to Cheng et al., issued March 3, 2015, the contents of which are incorporated herein by reference in their entirety.

[0066] Referring to Figure 12, graph 400, including Figures 402 to 408, shows a semiconductor device structure 300 (shown in Figure 11) relative to another semiconductor device structure formed using thermocouple control. Figures 402 and 406 show the interlayer variation within the semiconductor device structure 300 formed using a pyrometer (e.g., using pyrometer 112 (shown in Figure 1)). Figures 404 and 408 show the interlayer thickness variation within the semiconductor device structure formed using a thermocouple (e.g., thermocouple 110 (shown in Figure 1)).

[0067] As comparatively shown in Figures 402 and 404, the average interlayer thickness variation among silicon-germanium layers 308, 312, 316, and 320 in the semiconductor device structure 300 (shown in Figure 11) is on the order of about 25% of the average interlayer thickness of silicon-germanium layers A, C, E, and G in a semiconductor device structure formed under other conditions using thermocouple control. As comparatively shown in Figures 406 and 408, the average interlayer thickness variation among silicon layers 310, 314, and 318 in the semiconductor device structure 300 formed using pyrometer control is also on the order of about 25% of the average interlayer thickness of silicon layers B, D, and F in a semiconductor device structure formed under other conditions using thermocouple control. As will be understood by those skilled in the art in light of this disclosure, using a pyrometer to control and limit interlayer thickness variations can improve the reliability and / or yield of semiconductor device structures (such as those with fin field-effect transistors or gate-all-around architectures) compared to semiconductor device structures formed under other conditions using thermocouple control. As will be understood by those skilled in the art in light of this disclosure, one or more layers within the semiconductor device structure 300 may also differ from one or more other layers in a film stack, for example, by targeting different layer thicknesses, and this remains within the scope of this disclosure. Although a certain number of layer pairs is shown in Figure 12, it should be understood that the structure may have fewer or more layer pairs, and this remains within the scope of this disclosure.

[0068] The specific embodiments shown and described are illustrative of this disclosure and its best mode, and are not intended to limit the scope of the embodiments in any other way. In fact, for the sake of simplicity, conventional processing, connection, fabrication, and other functional aspects of the system may not be described in detail. Furthermore, the connecting lines shown in the various figures are intended to represent illustrative functional relationships and / or physical couplings between various elements. Many alternative or additional functional relationships or physical connections may exist in the actual system, and / or may not exist in some embodiments.

[0069] It should be understood that the configurations and / or methods described herein are exemplary in nature, and such specific embodiments or examples should not be considered limiting, as there are numerous possible variations. The specific routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various actions illustrated may be performed in the illustrated sequence, in other sequences, or in some cases omitted.

[0070] The subject matter of this disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes, systems and configurations, and other features, functions, actions and / or properties disclosed herein, as well as any and all equivalents thereof. [Simplified Explanation of the Diagram]

[0031] The features, features, and advantages of this disclosure disclosed herein will be described below with reference to the accompanying drawings, which are intended to illustrate but not limit certain embodiments of the disclosure. Figure 1 is a schematic diagram of a semiconductor processing system according to the present disclosure, showing a controller configured to communicate with a pyrometer and operatively connected to a heater element for controlling the temperature of a substrate and the deposited layer thereon using the pyrometer, the substrate being supported in a reaction chamber; Figure 2 is a schematic diagram of the semiconductor processing system of Figure 1, showing the controller heating the substrate to a first layer formation temperature using a heater element based on a substrate surface temperature measurement provided by the pyrometer; Figure 3 is a schematic diagram of the semiconductor processing system of Figure 1, showing the controller controlling the temperature of the first layer during first layer formation using the first layer temperature provided by the pyrometer; Figure 4 is a schematic diagram of the semiconductor processing system of Figure 1, showing the controller thermally adjusting the first layer according to a second layer formation temperature using the first layer temperature provided by the pyrometer; Figure 5 is a schematic diagram of the semiconductor processing system of Figure 1, showing the controller controlling the temperature of the second layer during formation of the second layer onto the first layer based on the second layer temperature provided by the pyrometer; Figure 6 is a block diagram of a method for forming a structure according to the present disclosure, showing the operation of the method according to illustrative and non-limiting examples of the method; Figure 7 is a block diagram of a part of the method in Figure 6, showing the operation of thermally conditioning the substrate according to the formation temperature of the first layer before forming the first layer on the substrate using infrared electromagnetic radiation emitted from the upper surface of the substrate and received by a pyrometer; Figure 8 is a block diagram of a part of the method in Figure 6, showing the operation of controlling the temperature of the first layer during the formation of the first layer on the substrate using infrared electromagnetic radiation emitted from the first layer and received by a pyrometer; Figure 9 is a block diagram of a part of the method in Figure 6, showing the operation of thermally conditioning the first layer before forming the second layer on the first layer using infrared electromagnetic radiation emitted from the first layer and received by a pyrometer; Figure 10 is a block diagram of a part of the method in Figure 6, showing the operation of controlling the temperature of the second layer during the formation of the second layer using electromagnetic radiation emitted from the second layer and received by a pyrometer. Figure 11 is a schematic diagram of a structure formed using the method in Figure 6, showing a nanosheet stack for a semiconductor device structure having a FinFET or Gate-All-Around (GAA) architecture covering a substrate; and Figure 12 is a comparison of thickness variations in a nanosheet stack formed using alternating silicon-germanium and silicon layers, showing a lower interlayer thickness variation in a film stack formed using pyrometer temperature and thermocouple temperature control.

[0032] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements in the drawings may be particularly enlarged relative to other elements to help improve the understanding of the illustrated embodiments of this disclosure.

Claims

1. A method for forming a semiconductor device structure, comprising: A substrate is provided in a reaction chamber; Form a first layer covering one of the substrates; A second layer is formed on the first layer; wherein the temperature of the first layer is controlled during the formation of the first layer using infrared electromagnetic radiation emitted by the first layer; and wherein the temperature of the second layer is controlled during the formation of the second layer using infrared electromagnetic radiation emitted by the second layer.

2. The method of claim 1, wherein providing the substrate in the reaction chamber comprises: A pyrometer is optically coupled to one surface of the substrate; And a heater element is radiatively coupled to the surface of the substrate, wherein the pyrometer is operatively associated with the heater element during the formation of the first and second layers to control the temperature of the first and second layers.

3. The method of claim 1, wherein controlling the temperature of the first layer during its formation includes: The infrared electromagnetic radiation emitted by the first layer is received at a pyrometer. A first layer temperature is determined by using infrared electromagnetic radiation received from the first layer at the pyrometer; the first layer temperature is compared with a predetermined first layer forming temperature limit; and when the first layer temperature is outside the predetermined first layer forming temperature limit, the heating of the first layer is increased or decreased.

4. The method of claim 1, wherein controlling the temperature of the second layer during its formation includes: The infrared electromagnetic radiation emitted by the second layer is received at a pyrometer. A second layer temperature is determined by using infrared electromagnetic radiation received from the second layer at the pyrometer; the second layer temperature is compared with a predetermined second layer formation temperature limit; and when the second layer temperature is outside the predetermined second layer formation temperature limit, the heating of the second layer is increased or decreased.

5. The method of claim 1 further includes thermally conditioning the substrate before forming the first layer covering the substrate.

6. The method of claim 5, wherein thermal conditioning of the substrate includes: The infrared electromagnetic radiation emitted by the substrate is received at a pyrometer. The substrate surface temperature is determined by using infrared electromagnetic radiation received from the substrate surface at the pyrometer; the substrate surface temperature is compared with a predetermined first layer formation temperature limit; when the substrate surface temperature is outside the predetermined first layer formation temperature limit, the heating of the substrate is increased or decreased; and when the substrate surface temperature is within the predetermined first layer formation temperature limit, the formation of the first layer on the substrate begins.

7. The method of claim 1 further includes thermally conditioning the first layer before forming the second layer onto the first layer.

8. The method of claim 7, wherein thermal conditioning of the first layer includes: The infrared electromagnetic radiation emitted by the first layer is received at a pyrometer. A first layer temperature is determined by using infrared electromagnetic radiation received from the first layer at the pyrometer; the first layer temperature is compared with a predetermined second layer formation temperature limit; when the first layer temperature is outside the predetermined second layer formation temperature limit, the heating of the first layer is increased or decreased; and when the surface temperature of the first layer is within the predetermined second layer formation temperature limit, the second layer is formed onto the first layer.

9. The method of claim 1, wherein forming the first layer includes providing a first layer precursor to the reaction chamber, the first layer precursor including one or more of dichlorosilane (H2SiCl2), silane (SiH4), hydrochloric acid (HCl), and germanane (GeH4).

10. The method of claim 1, wherein forming the first layer includes maintaining the pressure of forming the first layer in one of the reaction chambers between 2 Torr and 80 Torr, or between 4 Torr and 60 Torr, or between 5 Torr and 40 Torr.

11. The method of claim 1, wherein forming the first layer includes maintaining the first layer within a predetermined first layer forming temperature limit, the predetermined first layer forming temperature limit being between 500°C and 750°C, or between 600°C and 700°C, or between 620°C and 680°C.

12. The method of claim 1, wherein forming the first layer includes a first layer forming interval, the first layer forming interval being between 10 seconds and 50 seconds, or between 10 seconds and 40 seconds, or between 16 seconds and 26 seconds.

13. The method of claim 1, wherein forming the second layer includes providing a second layer precursor to the reaction chamber, the second layer precursor including one or more of silane (SiH4), dichlorosilane (H2SiCl2), disylane (Si2H6), and trisilane (Si3H8).

14. The method of claim 1, wherein forming the second layer includes maintaining the pressure of forming the second layer in one of the reaction chambers between 2 Torr and 80 Torr, or between 4 Torr and 60 Torr, or between 5 Torr and 40 Torr.

15. The method of claim 1, wherein forming the second layer includes maintaining the second layer at a predetermined second layer forming temperature, the predetermined second layer forming temperature being between 600°C and 800°C, or between 600°C and 750°C, or between 640°C and 700°C.

16. The method of claim 1, wherein forming the second layer includes a second layer forming interval, the second layer forming interval being between 10 seconds and 50 seconds, or between 14 seconds and 40 seconds, or between 16 seconds and 26 seconds.

17. The method of claim 1, wherein the first layer and the second layer form a first layer pair, the method further comprising forming at least one second layer pair having a third layer and a fourth layer onto the first layer pair, the third layer being formed onto the second layer and being the same as the first layer, and the fourth layer being formed onto the third layer and being the same as the second layer.

18. A semiconductor processing system, comprising: A reaction chamber configured to form a structure on a substrate; A pyrometer is optically coupled to the substrate; A heater element is radiatively coupled to the substrate; The system also includes a controller configured to communicate with the pyrometer and operatively connected to the heater element, the controller responding to a plurality of instructions recorded in a non-transitory machine-readable memory to: form a first layer overlying the substrate; control the temperature of the substrate using infrared electromagnetic radiation emitted by the first layer during the formation of the first layer; form a second layer onto the first layer; and control the temperature of the substrate using infrared electromagnetic radiation emitted by the second layer during the formation of the second layer.

19. The system of claim 18, wherein the indications further cause the controller to: determine a first layer temperature using infrared electromagnetic radiation received from the first layer at the pyrometer; compare the first layer temperature with a predetermined first layer forming temperature limit; and increase or decrease the heating of the first layer when the first layer temperature is outside the predetermined first layer forming temperature limit.

20. The system of claim 18, wherein the indications further cause the controller to: determine a second layer temperature using infrared electromagnetic radiation received from the second layer at the pyrometer; compare the second layer temperature with a predetermined second layer forming temperature limit; and increase or decrease the heating of the second layer when the second layer temperature is outside the predetermined second layer forming temperature limit.

21. The system of claim 18, wherein the pyrometer is optically coupled to the first layer during the formation of the first layer, wherein the pyrometer is optically coupled to the second layer during the formation of the second layer, and wherein the system includes a thermocouple disposed on the side of the substrate opposite to the pyrometer.

22. A semiconductor device structure formed using the method of claim 1, wherein the semiconductor device structure has a fin field-effect transistor or a gate-all-around architecture.

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