Active-matrix OLED display

Abstract

This invention relates to an active-matrix OLED display comprising a plurality of OLED pixels, wherein each pixel itself comprises an organic layer stack, and each layer of the organic layer stack may form a common semiconductor layer, wherein at least one first OLED pixel and a second OLED pixel comprise an anode layer, a common cathode layer, at least one emitter layer, which is optionally a common emitter layer, and at least one organic layer stack.

Description

[Technical Field]

[0001] The present invention relates to an active-matrix OLED display having a plurality of OLED pixels and a method for manufacturing at least one common layer. [Previous Technology]

[0002] Since Tang et al. demonstrated low operating voltage in 1987 (CW Tang et al. Appl. Phys. Lett. 51(12) 913(1987)), organic light-emitting diodes (OLEDs) have become promising candidates for realizing large-area displays. They consist of a series of thin layers of organic materials (typically 1 nm to 1 μm), which can be deposited, for example, by thermal vacuum evaporation or solution processing, and then electrical contacts are formed via metal layers. Organic electronic devices offer a wide variety of electronic or optoelectronic components, such as diodes, light-emitting diodes, photodiodes, and thin-film transistors (TFTs), which can compete with established components based on inorganic materials in terms of characteristics.

[0003] In the case of organic light-emitting diodes (OLEDs), due to the externally applied voltage, the light-emitting diode generates and emits light by injecting charge carriers (electrons from one side and holes from the other side) from the contact into the adjacent organic layer, and then excitons (electron-hole pairs) and the radiative overlap of these excitons are formed in the active region.

[0004] The advantage of this organic component over conventional inorganic components (based on inorganic semiconductors, such as silicon or gallium arsenide) is that it can be used to produce large-area components, such as large display components (visual displays, screens) or lamps (for lighting applications). Organic materials are relatively cheaper than inorganic materials (consuming less material and energy). Furthermore, compared to inorganic materials, these materials can be deposited on flexible substrates due to their lower processing temperatures, thus opening up a range of new applications in display and lighting engineering. The basic structure of such a component includes an arrangement of one or more of the following layers: a carrier substrate; a hole injection (positive contact) base electrode, typically transparent; a hole injection layer (HIL); a hole transport layer (HTL); a light-emitting layer (EL); an electron transport layer (ETL); an electron injection layer (EIL); an electron injection (negative contact) cover electrode, typically a metal with a low work function; and encapsulation to exclude environmental influences.

[0005] Although the above represents the most typical case, several layers can usually be omitted (except for HTL and ETL), or one layer can combine multiple properties.

[0006] Document US 5,093,698 describes the use of doped charge carrier transport layers (p-type doping of HTL by a mixture of acceptor-like molecules and n-type doping of ETL by a mixture of donor-like molecules). In this sense, doping refers to incorporating a mixture of materials into a layer that increases the equilibrium charge carrier concentration in this layer compared to the intrinsic layer of one of the two relevant materials. This results in improved conductivity and better charge carrier injection from adjacent contact layers into this mixed layer. Charge carrier transport still occurs on the matrix molecules. According to US 5,093,698, the doped layer is used as an injection layer at the interface of the contact materials, with the luminescent layer located therebetween (or, when only one doped layer is used, adjacent to another contact). The increased equilibrium charge carrier density and associated band bending resulting from doping facilitate charge carrier injection. According to US 5,093,698, the energy levels of the organic layer (HOMO = highest occupied molecular orbital or highest valence band energy; LUMO = lowest unoccupied molecular orbital or lowest conduction band energy) should be obtained so that electrons in the ETL and holes in the HTL can be injected into the EL (emitter layer) without hindrance. This requires very high ionization energy of the HTL material and very low electron affinity of the ETL material.

[0007] For active-matrix OLED displays, so-called crosstalk between display pixels has always been a major problem. Pixel or color crosstalk refers to the erroneous mixing of photons of one color generated by a pixel with photons of another color scattered from a nearby pixel. For example, documents GB 2 492 400 A and WO 2002 / 015292 A2 provide measures for reducing color crosstalk in OLED devices. Furthermore, or as an alternative, electrical crosstalk may occur. In this case, for example, a drive current applied to one of the pixels may cause light to be emitted from another pixel that is nearby and provides the drive current to it. Both will negatively impact the performance of the display device (see Yamazaki et al., A.(2013), 33.2: Spatial Resolution Characteristics of Organic Light-emitting Diode Displays: A comparative Analysis of MTF for Handheld and Workstation Formats. SID Symposium Digest of Technical Papers, 44: 419-422. doi: 10.1002 / j.2168-0159.2013.tb06236.x).

[0008] In typical commercial active-matrix OLED displays, electrical pixel crosstalk can be caused by the use of redox p-doping in the hole transport layer (HTL) shared by multiple OLED pixels (in a sense, the shared HTL is electrically connected to the anode of the plurality of pixels present in the display). The use of redox p-type dopants increases charge carrier density by generating new charge carriers (holes) by transferring electrons from molecules of the dopant matrix to dopant molecules, which is beneficial for low operating voltage, high operating stability, and high yield. On the other hand, redox p-type doping increases the conductivity of the hole transport layer from less than 10⁻⁸ S / cm (typically less than 10⁻¹⁰ S / cm) without p-type dopants to greater than 10⁻⁶ S / cm (typically, the concentration of p-type dopants is between 1 and 5 wt.%). Therefore, redox-doped HTLs are typically responsible for any electrical pixel crosstalk in active-matrix displays, including HTLs shared by a plurality of pixels. If n-type doping is performed using redox n-type dopants, ETL may also exhibit high conductivity similar to redox doped HTL; however, due to the display layout with a common cathode, ETL does not cause electrical pixel crosstalk. [Summary of the Invention]

[0009] One objective is to provide improved technology for active-matrix OLED displays, particularly to reduce crosstalk between adjacent pixels of active-matrix OLED displays.

[0010] In one embodiment, an active-matrix OLED display is provided, comprising a plurality of OLED pixels, wherein each pixel itself comprises an organic layer stack, and each layer in the organic layer stack can form a common semiconductor layer, wherein at least one first OLED pixel and a second OLED pixel comprise - an anode layer, - a common cathode layer, - at least one emitter layer, optionally a common emitter layer, - at least one organic layer stack disposed between the anode layer and the cathode layer, comprising - a plurality of semiconductor layers, and the plurality of semiconductor layers comprise at least two or more common semiconductor layers, wherein the plurality of semiconductor layers comprise - at least one first common semiconductor layer comprising at least one organic p-type dopant, - at least one second common semiconductor layer, - a common semiconductor layer extending over all pixels of the plurality of pixels in the OLED display or over at least two pixels of the plurality of pixels, and wherein the first common semiconductor comprises at least one organic p-type dopant and has a sheet resistance of ≥ 50 gigaohms per square together with the second common semiconductor layer.

[0011] According to one embodiment, the sheet resistance of the common first semiconductor layer and the common second semiconductor layer are measured together individually.

[0012] According to one embodiment, the sheet resistance of the common first semiconductor layer and the common second semiconductor layer are measured together separately, wherein for the sheet resistance measurement, the common second semiconductor layer is directly deposited on the common first semiconductor layer, and the common first semiconductor layer is directly deposited on the measurement electrode (preferably, an ITO electrode).

[0013] According to one embodiment, an active-matrix OLED display is provided, comprising a plurality of OLED pixels, wherein each pixel itself comprises an organic layer stack, and each layer of the organic layer stack can form a common semiconductor layer, wherein at least one first OLED pixel and a second OLED pixel comprise - an anode layer, - a common cathode layer, - at least one emitter layer, optionally a common emitter layer, - at least one organic layer stack disposed between the anode layer and the cathode layer, comprising - a plurality of semiconductor layers, and the plurality of semiconductor layers comprise at least two or more common semiconductor layers, wherein the plurality of semiconductor layers comprise - at least one first common semiconductor layer comprising at least one organic p-type dopant, - at least one second common semiconductor layer, - a common semiconductor layer extending over all pixels of the plurality of pixels in the OLED display or extending over at least two pixels of the plurality of pixels, and wherein the first common semiconductor comprises at least one organic p-type dopant, and together with the second common semiconductor layer has ≥ A 50 gigaohm sheet resistance per square meter, wherein the sheet resistance of the common first semiconductor layer and the common second semiconductor layer are measured together separately, wherein for the sheet resistance measurement, the common second semiconductor layer is directly deposited on the common first semiconductor layer, and the common first semiconductor layer is directly deposited on the measurement electrode (preferably, an ITO electrode).

[0014] According to one embodiment, an active-matrix OLED display is provided, comprising a plurality of OLED pixels, wherein each pixel itself comprises an organic layer stack, and each layer in the organic layer stack can form a common semiconductor layer, wherein at least one first OLED pixel and a second OLED pixel comprise - an anode layer, - a common cathode layer, - at least one emitter layer, optionally a common emitter layer, - at least one organic layer stack disposed between the anode layer and the cathode layer, comprising - a plurality of semiconductor layers, and the plurality of semiconductor layers comprise at least two or more common semiconductor layers, wherein the plurality of semiconductor layers comprise - at least one first common semiconductor layer comprising at least one organic p-type dopant, - at least one first common semiconductor layer comprising at least one organic p-type dopant, - a common semiconductor layer extending over all pixels of the plurality of pixels in the OLED display or extending over at least two pixels of the plurality of pixels, and wherein the first common semiconductor comprises at least one organic p-type dopant, and together with the second common semiconductor layer has ≥ A sheet resistance of 50 gigahertz per square ohm, wherein the sheet resistance of the common first semiconductor layer and the common second semiconductor layer are measured together separately, wherein for the sheet resistance measurement, the common second semiconductor layer is directly deposited on the first common semiconductor layer, and the first common semiconductor layer is directly deposited on the measurement electrode (preferably, an ITO electrode).

[0015] One property of organic semiconductor devices is their conductivity. The conductivity of the layers in an organic semiconductor device can be significantly improved by using hole-implanting materials. Sheet resistance is measured, for example, by the so-called "transmission line method." In this method, a voltage is applied to the thin layer and the current flowing through it is measured. By taking into account the geometry of the contact points and the layer thickness of the sample, the sheet resistance and conductivity can be obtained separately.

[0016] The sheet resistance is determined by the transmission line method.

[0017] According to an embodiment, an active-matrix OLED display is provided, comprising a plurality of OLED pixels, wherein each pixel itself comprises an organic layer stack, and each layer in the organic layer stack can form a common semiconductor layer, wherein at least one first OLED pixel and a second OLED pixel comprise - an anode layer, - a common cathode layer, - at least one emitter layer, optionally a common emitter layer, - at least one organic layer stack disposed between the anode layer and the cathode layer, comprising - a plurality of semiconductor layers, and the plurality of semiconductor layers comprise at least two or more common semiconductor layers, wherein the plurality of semiconductor layers comprise - at least one first common semiconductor layer comprising at least one organic p-type dopant, - at least one second common semiconductor layer, - a common semiconductor layer extending over all pixels of the plurality of pixels in the OLED display or over at least two pixels of the plurality of pixels, and wherein the first common semiconductor layer comprises at least one organic p-type dopant, and together with the second common semiconductor layer has ≥ A sheet resistance of 50 gigahertz per square ohm, wherein the sheet resistance is determined by the transmission line method, wherein optionally the sheet resistance of the common first semiconductor layer and the common second semiconductor layer are measured together separately, wherein for the sheet resistance measurement, the common second semiconductor layer is directly deposited on the common first semiconductor layer, and the common first semiconductor layer is directly deposited on the measuring electrode (preferably, an ITO electrode).

[0018] According to an embodiment, an active-matrix OLED display is provided, comprising a plurality of OLED pixels, wherein each pixel itself comprises an organic layer stack, and each layer in the organic layer stack can form a common semiconductor layer, wherein at least one first OLED pixel and a second OLED pixel comprise - an anode layer, - a common cathode layer, - at least one emitter layer, optionally a common emitter layer, - at least one organic layer stack disposed between the anode layer and the cathode layer, comprising - a plurality of semiconductor layers, and the plurality of semiconductor layers comprise at least two or more common semiconductor layers, wherein the plurality of semiconductor layers comprise - at least one first common semiconductor layer comprising at least one organic p-type dopant, - at least one second common semiconductor layer, - a common semiconductor layer extending over all pixels of the plurality of pixels in the OLED display or extending over at least two pixels of the plurality of pixels, and wherein the first common semiconductor comprises at least one organic p-type dopant, and together with the second common semiconductor layer has ≥ A sheet resistance of 50 gigahertz per square ohm, wherein the sheet resistance is determined by the transmission line method, wherein optionally the sheet resistance of the common first semiconductor layer and the common second semiconductor layer are measured together separately, wherein for the sheet resistance measurement, the common second semiconductor layer is directly deposited on the first common semiconductor layer, and the first common semiconductor layer is directly deposited on the measuring electrode (preferably, an ITO electrode).

[0019] According to an embodiment, an active-matrix OLED display is provided, comprising a plurality of OLED pixels, wherein each pixel itself comprises an organic layer stack, and each layer in the organic layer stack can form a common semiconductor layer, wherein at least one first OLED pixel and a second OLED pixel comprise - an anode layer, - a common cathode layer, - at least one emitter layer, optionally a common emitter layer, - at least one organic layer stack disposed between the anode layer and the cathode layer, comprising - a plurality of semiconductor layers, and the plurality of semiconductor layers comprise at least two or more common semiconductor layers, wherein the plurality of semiconductor layers comprise - at least one first common semiconductor layer comprising at least one organic p-type dopant, - at least one second common semiconductor layer, - a common semiconductor layer extending over all pixels of the plurality of pixels in the OLED display or extending over at least two pixels of the plurality of pixels, and wherein the first common semiconductor layer comprises at least one organic p-type dopant, and together with the second common semiconductor layer has ≥ The sheet resistance is 50 gigahertz per square ohm, wherein the sheet resistance is determined by the transmission line method, wherein the sheet resistance of the common first semiconductor layer and the common second semiconductor layer are measured together separately, wherein for the sheet resistance measurement, the common second semiconductor layer is directly deposited on the common first semiconductor layer, and the common first semiconductor layer is directly deposited on the measuring electrode (preferably, an ITO electrode).

[0020] According to an embodiment, an active-matrix OLED display is provided, comprising a plurality of OLED pixels, wherein each pixel itself comprises an organic layer stack, and each layer in the organic layer stack can form a common semiconductor layer, wherein at least one first OLED pixel and a second OLED pixel comprise - an anode layer, - a common cathode layer, - at least one emitter layer, optionally a common emitter layer, - at least one organic layer stack disposed between the anode layer and the cathode layer, comprising - a plurality of semiconductor layers, and the plurality of semiconductor layers comprise at least two or more common semiconductor layers, wherein the plurality of semiconductor layers comprise - at least one first common semiconductor layer comprising at least one organic p-type dopant, - at least one second common semiconductor layer, - a common semiconductor layer extending over all pixels of the plurality of pixels in the OLED display or over at least two pixels of the plurality of pixels, and wherein the first common semiconductor layer comprises at least one organic p-type dopant, and together with the second common semiconductor layer has ≥ The sheet resistance is 50 gigahertz per square ohm, wherein the sheet resistance is determined by the transmission line method, wherein the sheet resistance of the common first semiconductor layer and the common second semiconductor layer are measured together separately, wherein for the sheet resistance measurement, the common second semiconductor layer is directly deposited on the first common semiconductor layer, and the first common semiconductor layer is directly deposited on the measuring electrode (preferably, an ITO electrode).

[0021] The term "together measured individually" refers to measuring the sheet resistance of each layer in the absence of other layers or common layers of the OLED display.

[0022] Therefore, the term "together measured individually" refers to measuring the combined sheet resistance of the respective common layers, where the common layers are stacked on top of each other without other layers or common layers of the OLED display.

[0023] For example, when the sheet resistance of the common first semiconductor layer and the common second semiconductor layer are measured together individually, the common first semiconductor layer and the common second semiconductor layer are stacked on top of each other and no other layers are present for the sheet resistance measurement.

[0024] In another example, when the sheet resistance of the common hole injection layer and the common second semiconductor layer are measured together separately, the sheet resistance measurement is performed with the common hole injection layer and the common second semiconductor layer stacked on top of each other and no other layers present.

[0025] In another example, when the sheet resistance of the common hole semiconductor layer and the common hole transport layer are measured together separately, the sheet resistance measurement is performed with the common hole injection layer and the common hole transport layer stacked on top of each other and no other layers present.

[0026] In another example, when the sheet resistance of the common first semiconductor layer, the common second semiconductor layer and the common third semiconductor layer are measured together individually, the common first semiconductor layer, the common second semiconductor layer and the common third semiconductor layer are stacked on top of each other and no other layers are present for the sheet resistance measurement.

[0027] In another example, when the sheet resistance of the common first semiconductor layer, the common second semiconductor layer, the common third semiconductor layer and the common emitter layer are measured together individually, the sheet resistance measurement is performed with the common first semiconductor layer, the common second semiconductor layer, the common third semiconductor layer and the common emitter layer stacked on top of each other and no other layers present.

[0028] In another example, when the sheet resistance of the common first semiconductor layer, common second semiconductor layer, common third semiconductor layer, and emitter layer are measured together individually, the sheet resistance measurement is performed with the common first semiconductor layer, common second semiconductor layer, common third semiconductor layer, and emitter layer stacked on top of each other and no other layers present. Transmission line method

[0029] The sheet resistance Rs is measured against a given stack of deposited layers on a test element group (see Figure 2), which consists of test elements called channels (providing a gap "l" between two highly conductive electrodes, and the width "w" of each electrode (see Figure 1)). To improve the noise level, a large "w" can be used, and the electrodes can be formed in a finger-like structure to reduce area requirements (see Figure 3). Reliable Rs calculations require at least three such channels with different channel lengths "l". Measurements are performed as follows:

[0030] The first voltage is scanned between -5V and +5V in steps of less than 1V, and the current is measured. The substrate temperature during this measurement is preferably 23 + / - 2°C. A linear fit with the current value on the x-axis and the voltage value on the y-axis is used, and the slope of the fit gives the channel resistance "R". This process is repeated for each channel "n", resulting in "Rn" of channel "n" having a gap "ln" and a width "w". For Rs calculation, the width "w" must remain constant across all channels. For reliable resistance values, the fit quality index R2 must be greater than 0.9.

[0031] In the second step, the resistance "Rn" is plotted for the channel with the gap "ln", and a linear fit is performed. The slope of this fit is multiplied by the channel width "w" to obtain the sheet resistance Rs of the deposited layer stack. This calculation eliminates the influence of contact resistance and series resistance in the measurement setup. The electrode gap should be close to the gap of the target application, such as 20 µm, 40 µm, or 60 µm. The channel width of the low conductivity layer can be 100,000 µm.

[0032] Measurements were performed on a glass substrate (Corning Eagle XG) with ITO electrodes. The substrate was wet-cleaned using a water-based surfactant solution and dried with nitrogen, then baked at 200°C in a nitrogen atmosphere for 120 minutes before being treated with nitrogen plasma. Before electrical measurements and after organic layer deposition, the sample was encapsulated with a desiccant-containing encapsulation glass cap.

[0033] The transmission line method is a commonly used method for measuring chip resistance, and is particularly described in: - Williams, Ralph (1990). Modern GaAs Processing Methods. Artech House. ISBN 0890063435. - Schroder, Dieter K. (2006). Semiconductor Material and Device Characterization. John Wiley & Sons. ISBN 0471739065. - Reeves, GK, IEEE Electron Device Letters (Volume: 3, Issue: 5, May 1982), pages 113-133 (https: / / ieeexplore.ieee.org / document / 1482607). Optimal chip resistance measurement.

[0034] If the contact resistance is much lower than the resistance of the channel region between the electrodes, a simplified sheet resistance measurement method can be used. A voltage V of 5V is applied to an electrode pair having, for example, a channel width w of 103500μm and a channel length l of 80μm, and the current I is measured using a Keithley SM2635 power supply measurement unit. The channel resistance R is calculated using the formula R=V / I. In the next step, the sheet resistance Rs is calculated using Rs=R*w / l. The sheet resistance is measured at 23+ / -2 °C. Using the 80µm channel current at 5V in Figure 6 as an example, we obtain R=5V / 1.33e.7A=3.76e7Ohm and Rs=R*w / l=3.76e7Ohm*103500µm / 80µm=48.6GOhm / sq. Alternative sheet resistance measurement: As an alternative, the sheet resistance can be measured as follows:

[0035] According to Figure 4, an ITO coated substrate with 90 nm ITO and a sheet resistance of 10 Ohm / sq is patterned using a finger structure. The 12 ITO finger structures on the two electrodes form a total of 23 conductive regions: n=23. The finger length we is 4.5 mm. Therefore, the total channel width is 103.5 mm. The channel length w varies in 20 µm increments between 20 and 80 µm. Electrode pairs with four different channel lengths are combined on a substrate with dimensions of 25 x 25 mm², as shown in Figure 5. An organic layer is deposited on the substrate, covering the complete finger pattern. On the substrate, a first common semiconductor layer comprises at least one organic p-type dopant with a thickness of 10 nm. For example, the first common semiconductor layer is a hole injection layer composed of a doped covalent matrix compound, suitable covalent matrix compounds are described in the specification, deposited by co-evaporation. The temperature range depends on the material and is limited by the vaporization temperature at the start of vaporization and the decomposition temperature. These values ​​are material parameters and vary for each material. They typically range between 50 °C and 500 °C, with most falling between 150 °C and 350 °C. For example, covalent matrix compound deposition is performed at a fixed rate of 1 Å / s and a evaporation source temperature of 272 °C. Organic p-type dopant sources are selected, for example, from the group consisting of substituted or unsubstituted 3-axylenes, substituted or unsubstituted quinones, substituted or unsubstituted quinoids, and substituted or unsubstituted aromatic compounds including condensation rings. More preferably, the organic p-type dopant may be selected from substituted or unsubstituted 3-axylene compounds. Other suitable p-type dopants are described in the specification, for example, operating at 0.068 Å / s at 174 °C. On this layer, a second common semiconductor layer with a thickness of 128 nm is deposited at a deposition rate of 2 Å / s and a temperature of 280°C. This common semiconductor layer is, for example, a common hole transport layer or a common electron blocking layer, with the latter being preferred. The cavity pressure is 3e-7 mbar throughout the deposition process. However, as mentioned above, the evaporation temperature used depends on the vaporization initiation temperature and decomposition temperature. The evaporation temperature for organic materials depends on the material and is typically between 80 °C and 500 °C. After the organic layer deposition, the obtained substrate layer device is encapsulated in a nitrogen-filled glove box using a glass cover with an integrated desiccant to prevent sample degradation.

[0036] A voltage between -5V and +5V was applied in 0.5V steps across each electrode pair corresponding to a given channel length, and the current was measured. This was done using a Keithley SM2635 power supply measurement unit. Figure 6 shows an example of this measurement. The slope corresponding to each measurement for a given channel length was calculated to obtain the resistance Rn for that channel length. Rn was plotted over the corresponding channel length, the slope was calculated, and multiplied by a channel width of 103500 µm to obtain the measured sheet resistance Rs of the layer stack. In the given example, the slope was 470199 Ohm / µm multiplied by a channel width of 103500 µm. The result is a sheet resistance of 48.7 GOhm / square. The sheet resistance was measured at 23 °C and 1013 mbar. Common Layer

[0037] A common layer refers to a layer deposited over the entire display area via a large mask opening in a processing step and / or a layer consisting of several overlapping regions deposited in several successive steps, even if the overlapping layers are composed of different materials.

[0038] According to one embodiment, the first common semiconductor includes at least one organic p-type dopant. According to one embodiment, the first common semiconductor includes at least one organic p-type dopant, wherein the first common semiconductor is a hole injection layer. Organic p-type dopant

[0039] In this specification, unless otherwise defined, "organic p-type dopant" means an organic compound that can promote hole injection (i.e., preferably the injection of positive charge from the anode into the organic layer, particularly the hole transport layer), and wherein the organic compound can reduce the operating voltage (if present) at a certain current density.

[0040] Organic p-type dopants can provide hole injection from the anode to the hole transport matrix without substantially increasing the concentration of free charge carriers above the level corresponding to the conductivity observed in a pure matrix, or may increase the density of positive charge carriers in the hole transport material or hole transport layer when added to a semiconductor. Organic p-type dopants can be used alone in the layer or in combination with the hole transport material or hole transport layer.

[0041] According to one embodiment of an active-matrix OLED display, the organic p-type dopant may be selected from the group consisting of substituted or unsubstituted 3-axylenes, substituted or unsubstituted quinones, substituted or unsubstituted quinones, and substituted or unsubstituted aromatic compounds comprising condensation rings, and more preferably, the organic p-type dopant is selected from substituted or unsubstituted 3-axylene compounds. More preferably, the organic p-type dopant is an organic redox p-type dopant.

[0042] 3-Axylene compounds can be represented by formula (1): (1) where A1, A2 and A3 are independently selected from formula (2): (2), where "*" is the bonding position of the double bond of A1, A2 and A3 to formula (1), and R' is independently selected from the group including: substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl, substituted or unsubstituted alkyl, and preferably substituted or unsubstituted C6 to C24 aryl, substituted or unsubstituted C2 to C20 heteroaryl, substituted or unsubstituted C1 to C8 alkyl; The substituents on R'' are independently selected from the group consisting of: electron-withdrawing groups, CN, halogens, Cl, F, partially fluorinated or perfluorinated alkyl, partially fluorinated or perfluorinated alkoxy, and preferably partially fluorinated or perfluorinated C1 to C10 alkyl, partially fluorinated or perfluorinated C1 to C6 alkoxy, and more preferably CF3, OCF3, D or H; R'' is selected from the group consisting of: electron-withdrawing groups, preferably CN, substituted or unsubstituted alkyl, substituted or unsubstituted heteroaryl, substituted or unsubstituted aryl, perfluorinated alkyl, further preferably substituted or unsubstituted C1 to C8 alkyl, substituted or unsubstituted C2 to C20 heteroaryl, substituted or unsubstituted C6 to C24 aryl, perfluorinated C1 to C8 alkyl, and more preferably CF3, NO2 or F; The substituents on R'' are independently selected from the group consisting of: electron-withdrawing groups, CN, halogens, Cl, F, partially fluorinated or perfluorinated alkyl groups, partially fluorinated or perfluorinated alkoxy groups, and preferably partially fluorinated or perfluorinated C1 to C10 alkyl groups, partially fluorinated or perfluorinated C1 to C6 alkoxy groups, and more preferably CF3, OCF3, D, or H; wherein R' and R'' together optionally form a substituted or unsubstituted carbocyclic ring or a substituted or unsubstituted heterocyclic ring, preferably a substituted or unsubstituted heterocyclic ring; The substituents are independently selected from the group consisting of: electron-withdrawing groups, F, CN, perfluorinated C1 to C8 alkyl, substituted or unsubstituted C6 to C18 aryl, substituted or unsubstituted C2 to C18 heteroaryl, substituted or unsubstituted C3 to C18 carbocyclene, substituted or unsubstituted C3 to C18 carbocyclidene, substituted or unsubstituted C1 to C8 alkyl, substituted or unsubstituted C1 to C8 alkylene; wherein the substituents are selected from the group consisting of electron-withdrawing groups, halogens, F, Cl, CN, perfluorinated alkyl, perfluorinated C1 to C8 alkyl, CF3, partially fluorinated or perfluorinated alkylaryl, partially fluorinated or perfluorinated C6 to C18 alkylaryl.

[0043] According to one embodiment, the substituent R' may be independently selected from the group consisting of substituted or unsubstituted C6 to C24 aryl groups and substituted or unsubstituted C2 to C20 heteroaryl groups. According to one embodiment, the substituent R'' may be selected from the group consisting of electron-withdrawing groups, preferably R'' is independently selected from the group consisting of CN, CF3, NO2, or F, and more preferably R'' is CN.

[0044] According to another embodiment, R' is independently selected from the group consisting of substituted or unsubstituted C6 to C24 aryl groups, substituted or unsubstituted C2 to C20 heteroaryl groups; R'' is an electron-withdrawing group, preferably R'' is independently selected from the group consisting of CN, CF3, NO2, or F, and more preferably R'' is CN.

[0045] According to another embodiment, R' is independently selected from the group consisting of substituted or unsubstituted C6 to C18 aryl groups, substituted or unsubstituted C2 to C18 heteroaryl groups; R'' is independently selected from the group consisting of CN, CF3, NO2, or F, and more preferably R'' is CN.

[0046] According to another embodiment, R' is independently selected from the group consisting of substituted or unsubstituted C6 to C12 aryl groups, substituted or unsubstituted C2 to C12 heteroaryl groups; R'' is independently selected from the group consisting of CN, CF3 or F, and more preferably R'' is CN.

[0047] According to another embodiment, A1, A2 and A3 are selected as A1=A2≠A3, or A1≠A2 and A1≠A3 and A2=A3.

[0048] According to another embodiment, wherein A1, A2 and A3 are selected from formula (3) or (4): (3), (4), wherein X1 is selected from CR1 or N; X2 is selected from CR2 or N; X3 is selected from CR3 or N; X4 is selected from CR4 or N; X5 is selected from CR5 or N; R1, R2, R3, R4 and R5 are independently selected from the group including: electron-withdrawing group, CN, halogen, Cl, F, partially fluorinated or perfluorinated alkyl, partially fluorinated or perfluorinated C1 to C10 alkyl, preferably CF3, partially fluorinated or perfluorinated alkoxy, partially fluorinated or perfluorinated C1 to C6 alkoxy, D or H; wherein at least two of X1 to X5 are independently selected from CR1 to CR5; and wherein "*" in formula (3) and (4) is the bonding position of the double bond of A1, A2 and A3 to formula (1).

[0049] According to another embodiment, A1 is selected from formula (3) or (4): (3), (4), wherein X1 is selected from CR1 or N; X2 is selected from CR2 or N; X3 is selected from CR2 or N; X4 is selected from CR4 or N; X5 is selected from CR5 or N; R1, R2, R3, R4, and R5 are independently selected from the group consisting of: electron-withdrawing groups, CN, halogens, Cl, F, partially fluorinated or perfluorinated alkyl, partially fluorinated or perfluorinated C1 to C10 alkyl, preferably CF3, partially fluorinated or perfluorinated alkoxy, partially fluorinated or perfluorinated C1 to C6 alkoxy, D or H; wherein at least two of X1 to X5 are independently selected from CR1 to CR5; and wherein "*" in formula (3) and (4) is the bonding position of the double bond from A1 to formula (1).

[0050] According to another embodiment, A1 may be selected from the group including D1 to D210: wherein the "*" of the substituents on groups D1 to D210 indicates the bonding position of the double bond of A1 to formula (1).

[0051] According to another embodiment, A1, A2 and / or A3 may be selected from the group including D1 to D210.

[0052] According to another embodiment, the quinone of the organic p-type dopant has formula (5), and the quinone of the organic p-type dopant has formula (6). (5), (6), wherein A1 and A2 are independently selected from formula (7): (7) or NR''', wherein "*" is the bonding position of the double bond of A1 and A2 to formula (5) and formula (6): R' is selected from electron-withdrawing groups, substituted or unsubstituted alkyl, substituted or unsubstituted heteroaryl, substituted or unsubstituted aryl, perfluorinated alkyl, preferably substituted or unsubstituted C1 to C8 alkyl, substituted or unsubstituted C2 to C20 heteroaryl, substituted or unsubstituted C6 to C24 aryl, perfluorinated C1 to C8 alkyl, CF3, NO2, F, CN, The substituents on R' are independently selected from the group consisting of: D, H, electron-withdrawing groups, CN, halogens, Cl, F, partially fluorinated or perfluorinated alkyl groups, partially fluorinated or perfluorinated C1 to C10 alkyl groups, CF3, partially fluorinated or perfluorinated alkoxy groups, partially fluorinated or perfluorinated C1 to C6 alkoxy groups, and more preferably CN, CF3, OCF3, D, or H; R'' is an electron-withdrawing group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted heteroaryl group, a substituted or unsubstituted aryl group, a perfluorinated alkyl group, more preferably a substituted or unsubstituted C1 to C8 alkyl group, a substituted or unsubstituted C2 to C20 heteroaryl group, a substituted or unsubstituted C6 to C24 aryl group, a perfluorinated C1 to C8 alkyl group, CF3, NO2, F, CN, The substituents on R'' are independently selected from the group consisting of: electron-withdrawing groups, CN, halogens, Cl, F, partially fluorinated or perfluorinated alkyl groups, partially fluorinated or perfluorinated C1 to C10 alkyl groups, CF3, partially fluorinated or perfluorinated alkoxy groups, partially fluorinated or perfluorinated C1 to C6 alkoxy groups, and more preferably CN, CF3, OCF3, D, or H; wherein R' and R'' together optionally form a substituted or unsubstituted ring, and wherein the substituted or unsubstituted ring can be a substituted or unsubstituted carbocyclic ring or a substituted or unsubstituted heterocyclic ring, preferably a substituted or unsubstituted heterocyclic ring; R''' is selected from bonds, substituted or unsubstituted C1 to C18 alkyl groups, substituted or unsubstituted C6 to C24 aryl groups, substituted or unsubstituted C6 to C24 heteroaryl groups, CN, The substituents on R''' are independently selected from the group consisting of: substituted or unsubstituted C6 to C24 aryl groups, electron-withdrawing groups, CN, F, CF3, and perfluorinated C1 to C8 alkyl groups;R1, R2, R3, and R4 are independently selected from the group consisting of: electron-withdrawing groups, halogens, substituted or unsubstituted alkyl groups, partially fluorinated or perfluorinated alkyl groups, substituted or unsubstituted aryl groups, substituted or unsubstituted heteroaryl groups, substituted alkoxy groups, partially fluorinated or perfluorinated alkoxy groups, partially fluorinated or perfluorinated alkylaryl groups, O, S, substituted or unsubstituted N, preferably F, Cl, CN, substituted or unsubstituted C1 to C8 alkyl groups, partially fluorinated or perfluorinated C1 to C8 alkyl groups, CF3, substituted or unsubstituted C6 to C24 aryl groups, substituted or unsubstituted C2 to C20 heteroaryl groups, substituted or unsubstituted C1 to C8 alkoxy groups, partially fluorinated or perfluorinated C1 to C8 alkoxy groups, OCF3, substituted or unsubstituted C1 to C8 alkyl groups, CF3, partially fluorinated or perfluorinated C6 to C24 alkylaryl groups, The substituents on R1, R2, R3, and R4 are independently selected from the group consisting of: electron-withdrawing groups, substituted or unsubstituted alkyl groups, substituted or unsubstituted heteroaryl groups, substituted or unsubstituted aryl groups, perfluorinated alkyl groups, preferably CN groups, substituted or unsubstituted C1 to C8 alkyl groups, substituted or unsubstituted C2 to C20 heteroaryl groups, substituted or unsubstituted C6 to C24 aryl groups, perfluorinated C1 to C8 alkyl groups, CF3, NO2, and F; wherein R1 and R2 together, or R3 and R4 together, optionally form independently substituted or unsubstituted carbocyclic rings or substituted or unsubstituted heterocyclic rings, preferably substituted or unsubstituted heterocyclic rings; The substituents are independently selected from the group consisting of: electron-withdrawing groups, F, CN, perfluorinated C1 to C8 alkyl (preferably perfluorinated C1 to C8 alkoxy, preferably OCF3), substituted or unsubstituted C6 to C18 aryl, substituted or unsubstituted C2 to C18 heteroaryl, substituted or unsubstituted carbide ring, substituted or unsubstituted carbocyclic ring, substituted or unsubstituted alkylene ring, substituted or unsubstituted alkylene ring; wherein the substituents are independently selected from the group consisting of: electron-withdrawing groups, halogens, F, Cl, CN, perfluorinated alkyl, CF3, partially fluorinated or perfluorinated alkylaryl, partially fluorinated or perfluorinated C6 to C18 alkylaryl, perfluorinated C1 to C8 alkoxy (preferably OCF3); wherein A1 together with R3 and A2 together with R optionally independently form substituted or unsubstituted heterocycles; The substituents are independently selected from the group consisting of: substituted or unsubstituted C6 to C18 aryl groups, substituted or unsubstituted carbocyclic rings, substituted or unsubstituted carbocyclic rings, substituted or unsubstituted alkyl groups, and substituted or unsubstituted alkylene groups; wherein the substituents are independently selected from the group consisting of: electron-withdrawing groups, halogens, F, Cl, CN, perfluorinated alkyl groups, CF3, partially fluorinated or perfluorinated alkylaryl groups, and partially fluorinated or perfluorinated C6 to C18 alkylaryl groups.

[0053] According to another embodiment, A1, A2 and / or A3 are independently selected from the group D1 to D8: (D1), (D2), (D8), (D4), (D5), (D6), (D7), (D8), where "*" is the bond position of A1, A2 and / or A3 to the double bond of formula (1), to the double bond of formula (5) and to the double bond of formula (6).

[0054] According to another embodiment, A1 and A2 are independently selected from the group D1 to D8: (D1), (D2), (D8), (D4), (D5), (D6), (D7), (D8), where "*" is the bond position of A1 and A2 to the double bond of formula (1), to the double bond of formula (5) and to the double bond of formula (6).

[0055] According to another embodiment, wherein A1, A2 and / or A3 are selected from formulas (8) to (13): (8), (9), (10), (11), (12), and (13), wherein X1 is selected from CR1 or N; X2 is selected from CR2 or N; X3 is selected from CR3 or N; X4 is selected from CR4 or N; X5 is selected from CR5 or N; wherein one of R1, R2, R3, R4, and R5 is independently selected from electron-withdrawing groups, halogens, partially fluorinated or perfluorinated alkyl groups, partially fluorinated or perfluorinated alkoxy groups, D or H, preferably CN, Cl, F, partially fluorinated or perfluorinated C1 to C10 alkyl groups, CF3, partially fluorinated or perfluorinated C1 to C6 alkoxy groups; wherein at least two of X1 to X5 are independently selected from CR1 to CR5.

[0056] According to another embodiment, A1 and A2 are selected from formulas (8) to (13): (8), (9), (10), (11), (12), and (13), wherein X1 is selected from CR1 or N; X2 is selected from CR2 or N; X3 is selected from CR3 or N; X4 is selected from CR4 or N; X5 is selected from CR5 or N; wherein one of R1, R2, R3, R4, and R5 is independently selected from electron-withdrawing groups, halogens, partially fluorinated or perfluorinated alkyl groups, partially fluorinated or perfluorinated alkoxy groups, D or H, preferably CN, Cl, F, partially fluorinated or perfluorinated C1 to C10 alkyl groups, CF3, and partially fluorinated or perfluorinated C1 to C6 alkoxy groups; wherein at least two of X1 to X5 are independently selected from CR1 to CR5.

[0057] According to another embodiment, the compound including a p-type dopant of quinone or quinone class has the following structures E1 to E11: (E1), (E2), (E3), (E4), (E5), (E6), (E7), (E8), (E9), (E10), (E11).

[0058] According to another embodiment, the substituted or unsubstituted aromatic compound comprising the condensation ring may be represented by formula (14a), (14b), (14c), (14d), (14e) and formula (15): wherein A1 is selected from or NR''', wherein "*" is the bonding position of the double bond from A1 to formula (14), wherein R' is selected from electron-withdrawing group, substituted or unsubstituted alkyl, substituted or unsubstituted heteroaryl, substituted or unsubstituted C2 to C20 heteroaryl, substituted or unsubstituted aryl, substituted or unsubstituted C6 to C24 aryl, perfluorinated alkyl, preferably substituted or unsubstituted C1 to C8 alkyl, CN, substituted or unsubstituted C2 to C20 heteroaryl, substituted or unsubstituted C6 to C24 aryl, C1 to C8 alkyl, perfluorinated C1 to C8 alkyl, CF3, NO2, F, The substituents on R' are independently selected from the group consisting of: electron-withdrawing groups, CN, halogens, Cl, F, partially fluorinated or perfluorinated alkyl groups, partially fluorinated or perfluorinated C1 to C10 alkyl groups, CF3, partially fluorinated or perfluorinated alkoxy groups, partially fluorinated or perfluorinated C1 to C6 alkoxy groups, preferably OCF3, D, or H; R'' is selected from electron-withdrawing groups, substituted or unsubstituted alkyl groups, substituted or unsubstituted heteroaryl groups, substituted or unsubstituted C2 to C20 heteroaryl groups, substituted or unsubstituted aryl groups, substituted or unsubstituted C6 to C24 aryl groups, perfluorinated alkyl groups, preferably substituted or unsubstituted C1 to C8 alkyl groups, CN, substituted or unsubstituted C2 to C20 heteroaryl groups, substituted or unsubstituted C6 to C24 aryl groups, C1 to C8 alkyl groups, perfluorinated C1 to C8 alkyl groups, CF3, NO2, F, The substituents on R'' are independently selected from the group consisting of: electron-withdrawing groups, CN, halogens, Cl, F, partially fluorinated or perfluorinated alkyl, partially fluorinated or perfluorinated C1 to C10 alkyl, CF3, partially fluorinated or perfluorinated alkoxy, partially fluorinated or perfluorinated C1 to C6 alkoxy, preferably OCF3, D or H; R''' is selected from: bond, substituted or unsubstituted C1 to C18 alkyl, substituted or unsubstituted C6 to C24 aryl, substituted or unsubstituted C6 to C24 heteroaryl, CN, wherein the substituents on R''' are independently selected from the group consisting of: substituted or unsubstituted C6 to C24 aryl, electron-withdrawing groups, CN, F, CF3, perfluorinated C1 to C8 alkyl;R1 and R2 are independently selected from the group consisting of: electron-withdrawing groups, halogens, F, Cl, CN, substituted alkyl groups, substituted C1 to C8 alkyl groups, partially fluorinated or perfluorinated C1 to C8 alkyl groups, preferably CF3, substituted or unsubstituted aryl groups, substituted or unsubstituted C6 to C24 aryl groups, substituted or unsubstituted heteroaryl groups, substituted or unsubstituted C2 to C20 heteroaryl groups, substituted C1 to C8 alkoxy groups, partially fluorinated or perfluorinated C1 to C8 alkoxy groups, preferably OCF3, partially fluorinated or perfluorinated alkylaryl groups, partially fluorinated or perfluorinated C6 to C24 alkylaryl groups, O, S, N; The substituents on R1 and R2 are independently selected from the group consisting of: electron-withdrawing groups, preferably CN; substituted or unsubstituted alkyl groups; substituted or unsubstituted C1 to C8 alkyl groups; substituted or unsubstituted heteroaryl groups; substituted or unsubstituted C2 to C20 heteroaryl groups; substituted or unsubstituted aryl groups; substituted or unsubstituted C6 to C24 aryl groups; perfluorinated alkyl groups; perfluorinated C1 to C8 alkyl groups, preferably CF3, NO2, F; wherein R1 and R2 together optionally form a substituted or unsubstituted carbocyclic ring or a substituted or unsubstituted heterocyclic ring, preferably a substituted or unsubstituted carbocyclic ring; The substituents on the ring are selected from the group consisting of: electron-withdrawing groups, F, CN, perfluorinated C1 to C8 alkyl (preferably, perfluorinated C1 to C8 alkoxy), OCF3, substituted or unsubstituted C6 to C18 aryl, substituted or unsubstituted C2 to C18 heteroaryl, substituted or unsubstituted carbide ring, substituted or unsubstituted carbocyclic ring, substituted or unsubstituted alkylene ring, substituted or unsubstituted alkylene ring; wherein the substituents are selected from the group consisting of: electron-withdrawing groups, halogens, F, Cl, CN, perfluorinated alkyl, perfluorinated C1 to C8 alkyl, CF3, partially fluorinated or perfluorinated alkylaryl, partially fluorinated or perfluorinated C6 to C18 alkylaryl, perfluorinated C1 to C8 alkoxy, OCF3; Y The substituents on Ra are independently selected from N or CRa, and Ra is independently selected from the group consisting of: H, D, electron-withdrawing groups, CN, substituted or unsubstituted C1 to C8 alkyl, perfluorinated C1 to C8 alkyl, CF3, perfluorinated C1 to C8 alkoxy, OCF3; wherein the substituents on Ra are independently selected from the group consisting of: electron-withdrawing groups, CN, halogen, Cl, F, partially fluorinated or perfluorinated alkyl, partially fluorinated or perfluorinated C1 to C10 alkyl, CF3, partially fluorinated or perfluorinated alkoxy, partially fluorinated or perfluorinated C1 to C6 alkoxy, preferably OCF3, D or H; wherein the two Ra may optionally form a substituted or unsubstituted carbocyclic ring or a substituted or unsubstituted heterocyclic ring, preferably a substituted or unsubstituted carbocyclic ring;The substituents on the ring are independently selected from the group consisting of: electron-withdrawing groups, F, CN, perfluorinated C1 to C8 alkyl (preferably, perfluorinated C1 to C8 alkoxy), OCF3, substituted or unsubstituted C6 to C18 aryl, substituted or unsubstituted C2 to C18 heteroaryl, substituted or unsubstituted carbocyclic ring, substituted or unsubstituted carbocyclic ring, substituted or unsubstituted alkylene ring, substituted or unsubstituted alkylene ring; wherein the two Ys optionally form a substituted or unsubstituted carbocyclic ring or a substituted or unsubstituted heterocyclic ring, preferably a substituted or unsubstituted carbocyclic ring; The substituents on the ring may be electron-withdrawing groups, F, CN, perfluorinated C1 to C8 alkyl (preferably perfluorinated C1 to C8 alkoxy), OCF3, substituted or unsubstituted C6 to C18 aryl, substituted or unsubstituted C2 to C18 heteroaryl, substituted or unsubstituted carbide ring, substituted or unsubstituted carbide ring, substituted or unsubstituted alkylene ring, substituted or unsubstituted alkylene ring; (15), wherein R1, R2, R3, R4, R5, and R6 are independently selected from the group consisting of H, F, CN, CF3, and NO2, wherein at least one of R1, R2, R3, R4, R5, and R6 is F, CN, CF3, or NO2.

[0059] According to another embodiment, the substituted or unsubstituted aromatic compound comprising the condensation ring has a structure of G1 to G4: (G1), (G2), (G3), (G4) and (G5).

[0060] According to another embodiment, at least one R1 and R2 are independently selected from the group consisting of: CN, OCF3, CF3, F, perfluorinated C1 to C8 alkyl, substituted C6 to C24 aryl, wherein the substituent is F, CF3, CN, or substituted C1 to C8 alkyl.

[0061] According to an embodiment of the present invention, the organic p-type dopant is non-emissive. In the context of this specification, the terms "inherently non-emissive" or "non-emissive" mean that the contribution of the organic p-type dopant to the visible light emission spectrum from an organic electronic device (preferably an OLED or display device) is less than 10%, preferably less than 5%, relative to the visible light emission spectrum. The visible light emission spectrum is an emission spectrum with wavelengths from about ≥380 nm to about ≤780 nm. Active-matrix OLED display

[0062] According to another embodiment of the active matrix OLED display, the first common semiconductor layer is a common hole injection layer. Preferably, the common hole injection layer is composed of an organic p-type dopant, or the common hole transport layer includes an organic p-type dopant and a hole transport material.

[0063] According to another embodiment of an active matrix OLED display, the first common semiconductor layer includes at least one organic p-type dopant in direct contact with the anode layer, wherein the second common semiconductor layer is disposed between the first semiconductor layer and the emitter layer.

[0064] According to another embodiment of an active matrix OLED display, the second common semiconductor layer is a common hole transport layer or a common electron blocking layer. Preferably, the common first hole injection layer is in direct contact with the second common semiconductor layer, which is a common hole transport layer or a common electron blocking layer.

[0065] According to another embodiment of an active-matrix OLED display, the plurality of common semiconductor layers further include a common third semiconductor layer, wherein the first common semiconductor layer, the second common semiconductor layer, and the common third semiconductor layer together have a sheet resistance of ≥ 50 gigaohms per square.

[0066] According to another embodiment of an active-matrix OLED display, the plurality of common semiconductor layers further include a common third semiconductor layer, wherein the first common semiconductor layer, the second common semiconductor layer, and the common third semiconductor layer together have a sheet resistance of ≥ 50 gigaohms per square, wherein the sheet resistance of the common first semiconductor layer, the common second semiconductor layer, and the common third semiconductor layer is measured together individually.

[0067] According to another embodiment of the active matrix OLED display, the plurality of common semiconductor layers further include a common third semiconductor layer, wherein the first common semiconductor layer, the second common semiconductor layer, and the common third semiconductor layer together have a sheet resistance of ≥ 50 gigaohms per square meter, wherein the sheet resistance of the common first semiconductor layer, the common second semiconductor layer, and the common third semiconductor layer is measured together individually, wherein for the sheet resistance measurement, the third common semiconductor layer is directly deposited on the second common semiconductor layer, the second common semiconductor layer is directly deposited on the first common semiconductor layer, and the first common semiconductor layer is directly deposited on the measurement electrode (preferably, an ITO electrode).

[0068] According to another embodiment of the active-matrix OLED display, the plurality of common semiconductor layers further include a common third semiconductor layer, wherein the first common semiconductor layer, the second common semiconductor layer, and the common third semiconductor layer together have a sheet resistor selected from ≥ 100 gigaohms per square, ≥ 200 gigaohms per square, ≥ 300 gigaohms per square, ≥ 400 gigaohms per square, ≥ 500 gigaohms per square, ≥ 1000 gigaohms per square, ≥ 2500 gigaohms per square, ≥ 5000 gigaohms per square, ≥ 10000 gigaohms per square, ≥ 20000 gigaohms per square, ≥ 30000 gigaohms per square, ≥ 40000 gigaohms per square, or ≥ 50000 gigaohms per square.

[0069] According to another embodiment of an active-matrix OLED display, the plurality of common semiconductor layers further include a common third semiconductor layer, wherein the first common semiconductor layer, the second common semiconductor layer, and the common third semiconductor layer together have a sheet resistance selected from ≥ 100 GΩ per square, ≥ 200 GΩ per square, ≥ 300 GΩ per square, ≥ 400 GΩ per square, ≥ 500 GΩ per square, ≥ 1000 GΩ per square, ≥ 2500 GΩ per square, ≥ 5000 GΩ per square, ≥ 10000 GΩ per square, ≥ 20000 GΩ per square, ≥ 30000 GΩ per square, ≥ 40000 GΩ per square, or ≥ 50000 GΩ per square, wherein the sheet resistance of the common first semiconductor layer, the common second semiconductor layer, and the common third semiconductor layer is measured together individually.

[0070] According to another embodiment of an active-matrix OLED display, the plurality of common semiconductor layers further include a common third semiconductor layer, wherein the first common semiconductor layer, the second common semiconductor layer, and the common third semiconductor layer together have a power density selected from ≥ 100 gigaohms per square meter, ≥ 200 gigaohms per square meter, ≥ 300 gigaohms per square meter, ≥ 400 gigaohms per square meter, ≥ 500 gigaohms per square meter, ≥ 1000 gigaohms per square meter, ≥ 2500 gigaohms per square meter, ≥ 5000 gigaohms per square meter, ≥ 10000 gigaohms per square meter, ≥ 20000 gigaohms per square meter, ≥ 30000 gigaohms per square meter, ≥ 40000 gigaohms per square meter, or ≥ A sheet resistor of 50,000 gigaohms per square meter, wherein the sheet resistors of the common first semiconductor layer, the common second semiconductor layer, and the common third semiconductor layer are measured together separately. For the sheet resistor measurement, the third common semiconductor layer is directly deposited on the second common semiconductor layer, the second common semiconductor layer is directly deposited on the first common semiconductor layer, and the first common semiconductor layer is directly deposited on the measurement electrode (preferably, an ITO electrode).

[0071] According to another embodiment of an active-matrix OLED display, the common third semiconductor layer is a common electron blocking layer, the first common semiconductor layer is a common hole injection layer, and the second common semiconductor layer is a common hole transport layer; and the first common semiconductor layer as a common hole injection layer, the second common semiconductor layer as a common hole transport layer, and the common third semiconductor layer as a common electron blocking layer together have a sheet resistance of ≥ 50 gigaohms per square.

[0072] According to another embodiment of an active-matrix OLED display, the common third semiconductor layer is a common electron blocking layer, the first common semiconductor layer is a common hole injection layer, and the second common semiconductor layer is a common hole transport layer; and the first common semiconductor layer as a common hole injection layer, the second common semiconductor layer as a common hole transport layer, and the common third semiconductor layer as a common electron blocking layer together have a sheet resistance of ≥ 50 gigaohms per square meter, wherein the sheet resistance of the common first semiconductor layer, the common second semiconductor layer, and the common third semiconductor layer are measured together individually.

[0073] According to another embodiment of an active-matrix OLED display, the common third semiconductor layer is a common electron blocking layer, the first common semiconductor layer is a common hole injection layer, and the second common semiconductor layer is a common hole transport layer; and the first common semiconductor layer as a common hole injection layer, the second common semiconductor layer as a common hole transport layer, and the common third semiconductor layer as a common electron blocking layer together have a sheet resistance of ≥ 50 gigaohms per square meter, wherein the sheet resistance of the common first semiconductor layer, the common second semiconductor layer, and the common third semiconductor layer is measured together individually, wherein for the sheet resistance measurement, the third common semiconductor layer is directly deposited on the second common semiconductor layer, the second common semiconductor layer is directly deposited on the first common semiconductor layer, and the first common semiconductor layer is directly deposited on the measurement electrode (preferably, an ITO electrode).

[0074] According to another embodiment of an active-matrix OLED display, the common third semiconductor layer is a common electron blocking layer, the first common semiconductor layer is a common hole injection layer, and the second common semiconductor layer is a common hole transport layer; and the first common semiconductor layer as a common hole injection layer, the second common semiconductor layer as a common hole transport layer, and the common third semiconductor layer as a common electron blocking layer together have a sheet resistance selected from ≥ 100 GΩ / s², ≥ 200 GΩ / s², ≥ 300 GΩ / s², ≥ 400 GΩ / s², ≥ 500 GΩ / s², ≥ 1000 GΩ / s², ≥ 2500 GΩ / s², ≥ 5000 GΩ / s², ≥ 10000 GΩ / s², ≥ 20000 GΩ / s², ≥ 30000 GΩ / s², ≥ 40000 GΩ / s², or ≥ 50000 GΩ / s².

[0075] According to another embodiment of an active-matrix OLED display, the common third semiconductor layer is a common electron blocking layer, the first common semiconductor layer is a common hole injection layer, and the second common semiconductor layer is a common hole transport layer; and the first common semiconductor layer as a common hole injection layer, the second common semiconductor layer as a common hole transport layer, and the common third semiconductor layer as a common electron blocking layer together have a power density selected from ≥ 100 gigaohms per square meter, ≥ 200 gigaohms per square meter, ≥ 300 gigaohms per square meter, ≥ 400 gigaohms per square meter, ≥ 500 gigaohms per square meter, ≥ 1000 gigaohms per square meter, ≥ 2500 gigaohms per square meter, ≥ 5000 gigaohms per square meter, ≥ 10000 gigaohms per square meter, ≥ 20000 gigaohms per square meter, ≥ 30000 gigaohms per square meter, ≥ 40000 gigaohms per square meter, or ≥ The sheet resistance is 50,000 gigaohms per square meter, and the sheet resistances of the common first semiconductor layer, common second semiconductor layer, and common third semiconductor layer are measured together separately.

[0076] According to another embodiment of an active-matrix OLED display, the common third semiconductor layer is a common electron blocking layer, the first common semiconductor layer is a common hole injection layer, and the second common semiconductor layer is a common hole transport layer; and the first common semiconductor layer as a common hole injection layer, the second common semiconductor layer as a common hole transport layer, and the common third semiconductor layer as a common electron blocking layer together have a power density selected from ≥ 100 gigaohms per square meter, ≥ 200 gigaohms per square meter, ≥ 300 gigaohms per square meter, ≥ 400 gigaohms per square meter, ≥ 500 gigaohms per square meter, ≥ 1000 gigaohms per square meter, ≥ 2500 gigaohms per square meter, ≥ 5000 gigaohms per square meter, ≥ 10000 gigaohms per square meter, ≥ 20000 gigaohms per square meter, ≥ 30000 gigaohms per square meter, ≥ 40000 gigaohms per square meter, or ≥ A sheet resistor of 50,000 gigaohms per square meter, wherein the sheet resistors of the common first semiconductor layer, the common second semiconductor layer, and the common third semiconductor layer are measured together separately. For the sheet resistor measurement, the third common semiconductor layer is directly deposited on the second common semiconductor layer, the second common semiconductor layer is directly deposited on the first common semiconductor layer, and the first common semiconductor layer is directly deposited on the measurement electrode (preferably, an ITO electrode).

[0077] According to another embodiment of an active matrix OLED display, a common third semiconductor layer, which is a common electron blocking layer, is disposed between a second common semiconductor layer, which is a common hole transport layer, and an emission layer.

[0078] According to another embodiment of an active matrix OLED display, the emission layer of each pixel is doped with a color-defining emitter dopant, wherein the color of the color-defining emitter dopant is independently selected for each pixel or selected to be the same.

[0079] According to another embodiment of the active matrix OLED display, the sheet resistance is determined by the transmission line method.

[0080] According to another embodiment of the active matrix OLED display, the anode layer of the first OLED pixel and the anode layer of the second OLED pixel are separated by a pixel definition layer, such that the anode layer of the first OLED pixel and the anode layer of the second OLED pixel are not formed as a common layer and do not contact each other. Preferably, the anode layers of a plurality of OLED pixels are not formed as a common layer and do not contact each other.

[0081] According to another embodiment of an active matrix OLED display, a common first hole injection layer is at least partially configured to be in direct contact with an anode layer, and a second common hole transport layer is disposed between a common emitter layer and a common first hole injection layer.

[0082] According to another embodiment of an active-matrix OLED display, the common first hole injection layer, the second common semiconductor layer, the common third semiconductor layer, and the common emitter layer together have a sheet resistance of ≥ 50 gigaohms per square.

[0083] According to another embodiment of an active-matrix OLED display, the common first hole injection layer, the second common semiconductor layer, the common third semiconductor layer, and the emitter layer together have a sheet resistance of ≥ 50 gigaohms per square.

[0084] According to another embodiment of an active-matrix OLED display, the common first hole injection layer, the second common semiconductor layer, the common third semiconductor layer, and the common emitter layer together have a sheet resistance of ≥ 50 gigaohms per square meter, wherein the sheet resistance of the common first semiconductor layer, the common second semiconductor layer, the common third semiconductor layer, and the emitter layer is measured together individually.

[0085] According to another embodiment of an active-matrix OLED display, the common first hole injection layer, the second common semiconductor layer, the common third semiconductor layer, and the emitter layer together have a sheet resistance of ≥ 50 gigaohms per square meter, wherein the sheet resistance of the common first semiconductor layer, the common second semiconductor layer, the common third semiconductor layer, and the emitter layer is measured together individually, wherein for the sheet resistance measurement, the emitter layer is directly deposited on the common third semiconductor layer, the common third semiconductor layer is directly deposited on the second common semiconductor layer, the second common semiconductor layer is directly deposited on the common first hole injection layer, and the common first hole injection layer is directly deposited on the measurement electrode (preferably, an ITO electrode).

[0086] According to another embodiment of an active-matrix OLED display, the common first hole injection layer, the second common semiconductor layer, the common third semiconductor layer, and the common emitter layer together have a sheet resistance of ≥ 50 gigaohms per square meter, wherein the sheet resistance of the common first semiconductor layer, the common second semiconductor layer, the common third semiconductor layer, and the common emitter layer is measured together individually.

[0087] According to another embodiment of an active-matrix OLED display, the common first hole injection layer, the second common semiconductor layer, the common third semiconductor layer, and the common emitter layer together have a sheet resistance of ≥ 50 gigaohms per square meter, wherein the sheet resistance of the common first semiconductor layer, the common second semiconductor layer, the common third semiconductor layer, and the common emitter layer is measured together individually, wherein for the sheet resistance measurement, the common emitter layer is directly deposited on the common third semiconductor layer, the common third semiconductor layer is directly deposited on the second common semiconductor layer, the second common semiconductor layer is directly deposited on the common first hole injection layer, and the common first hole injection layer is directly deposited on the measurement electrode (preferably, an ITO electrode).

[0088] According to another embodiment of an active-matrix OLED display, the common first hole injection layer, the second common semiconductor layer, the common third semiconductor layer, and the common emitter layer together have a sheet resistor selected from ≥ 100 GΩ per square, ≥ 200 GΩ per square, ≥ 300 GΩ per square, ≥ 400 GΩ per square, ≥ 500 GΩ per square, ≥ 1000 GΩ per square, ≥ 2500 GΩ per square, ≥ 5000 GΩ per square, ≥ 10000 GΩ per square, ≥ 20000 GΩ per square, ≥ 30000 GΩ per square, ≥ 40000 GΩ per square, or ≥ 50000 GΩ per square.

[0089] According to another embodiment of an active-matrix OLED display, the common first hole injection layer, the second common semiconductor layer, the common third semiconductor layer, and the common emitter layer together have a sheet resistance selected from ≥ 100 GΩ / s², ≥ 200 GΩ / s², ≥ 300 GΩ / s², ≥ 400 GΩ / s², ≥ 500 GΩ / s², ≥ 1000 GΩ / s², ≥ 2500 GΩ / s², ≥ 5000 GΩ / s², ≥ 10000 GΩ / s², ≥ 20000 GΩ / s², ≥ 30000 GΩ / s², ≥ 40000 GΩ / s², or ≥ 50000 GΩ / s², wherein the sheet resistance of the common first semiconductor layer, the common second semiconductor layer, the common third semiconductor layer, and the emitter layer is measured together individually.

[0090] According to another embodiment of an active-matrix OLED display, the common first hole injection layer, the second common semiconductor layer, the common third semiconductor layer, and the emitter layer together have a power density selected from ≥ 100 gigaohms per square meter, ≥ 200 gigaohms per square meter, ≥ 300 gigaohms per square meter, ≥ 400 gigaohms per square meter, ≥ 500 gigaohms per square meter, ≥ 1000 gigaohms per square meter, ≥ 2500 gigaohms per square meter, ≥ 5000 gigaohms per square meter, ≥ 10000 gigaohms per square meter, ≥ 20000 gigaohms per square meter, ≥ 30000 gigaohms per square meter, ≥ 40000 gigaohms per square meter, or ≥ A sheet resistance of 50,000 gigaohms per square meter, wherein the sheet resistances of the common first semiconductor layer, the common second semiconductor layer, the common third semiconductor layer, and the emitter layer are measured together separately. For the sheet resistance measurement, the common emitter layer is directly deposited on the common third semiconductor layer, the common third semiconductor layer is directly deposited on the second common semiconductor layer, the second common semiconductor layer is directly deposited on the common first hole injection layer, and the common first hole injection layer is directly deposited on the measurement electrode (preferably, an ITO electrode).

[0091] According to another embodiment of an active-matrix OLED display, the common first hole injection layer, the second common semiconductor layer, the common third semiconductor layer, and the common emitter layer together have a sheet resistance selected from ≥ 100 GΩ / s², ≥ 200 GΩ / s², ≥ 300 GΩ / s², ≥ 400 GΩ / s², ≥ 500 GΩ / s², ≥ 1000 GΩ / s², ≥ 2500 GΩ / s², ≥ 5000 GΩ / s², ≥ 10000 GΩ / s², ≥ 20000 GΩ / s², ≥ 30000 GΩ / s², ≥ 40000 GΩ / s², or ≥ 50000 GΩ / s², wherein the sheet resistance of the common first semiconductor layer, the common second semiconductor layer, the common third semiconductor layer, and the common emitter layer is measured together individually.

[0092] According to another embodiment of an active-matrix OLED display, the common first hole injection layer, the second common semiconductor layer, the common third semiconductor layer, and the common emitter layer together have a power density selected from ≥ 100 gigaohms per square meter, ≥ 200 gigaohms per square meter, ≥ 300 gigaohms per square meter, ≥ 400 gigaohms per square meter, ≥ 500 gigaohms per square meter, ≥ 1000 gigaohms per square meter, ≥ 2500 gigaohms per square meter, ≥ 5000 gigaohms per square meter, ≥ 10000 gigaohms per square meter, ≥ 20000 gigaohms per square meter, ≥ 30000 gigaohms per square meter, ≥ 40000 gigaohms per square meter, or ≥ A sheet resistance of 50,000 gigaohms per square meter, wherein the sheet resistance of the common first semiconductor layer, the common second semiconductor layer, the common third semiconductor layer, and the common emitter layer are measured together separately. For the sheet resistance measurement, the common emitter layer is directly deposited on the common third semiconductor layer, the common third semiconductor layer is directly deposited on the second common semiconductor layer, the second common semiconductor layer is directly deposited on the common first hole injection layer, and the common first hole injection layer is directly deposited on the measurement electrode (preferably, an ITO electrode).

[0093] According to another embodiment of an active-matrix OLED display, the active-matrix OLED display includes a plurality of OLED pixels, wherein each pixel itself includes an organic layer stack, and each layer of the organic layer stack can form a common semiconductor layer, wherein at least one of the first OLED pixel and the second OLED pixel includes an anode layer, wherein the anode layers of the first OLED pixel and the second OLED pixel are optionally separated by a pixel definition layer, and wherein at least one of the first OLED pixels and at least one of the second OLED pixels includes a common cathode layer and at least one organic layer stack, the at least one organic layer stack including a plurality of semiconductor layers, and the plurality of semiconductor layers including at least two or more common semiconductor layers, wherein the common semiconductor layer of the organic layers is disposed between the common cathode layer and the anode layer, and the plurality of common semiconductor layers including at least one first common semiconductor layer includes at least one organic p-type dopant and at least one second common semiconductor layer, wherein the first common semiconductor layer is at least partially configured to be in direct contact with the anode layer, and the second semiconductor layer is disposed between an emitter layer (preferably a common emitter layer) and the first common semiconductor layer (preferably a hole injection layer); Together with the first common semiconductor layer and the second common semiconductor layer, they have a sheet resistance of ≥ 50 gigahertz per square ohms.

[0094] According to another embodiment of an active-matrix OLED display, the active-matrix OLED display includes a plurality of OLED pixels, wherein each pixel itself includes an organic layer stack, and each layer of the organic layer stack can form a common semiconductor layer, wherein at least one of the first OLED pixel and the second OLED pixel includes an anode layer, wherein the anode layers of the first OLED pixel and the second OLED pixel are optionally separated by a pixel definition layer, and wherein at least one of the first OLED pixels and at least one of the second OLED pixels includes a common cathode layer and at least one organic layer stack, the at least one organic layer stack including a plurality of semiconductor layers, and the plurality of semiconductor layers including at least two or more common semiconductor layers, wherein the common semiconductor layer of the organic layers is disposed between the common cathode layer and the anode layer, and the plurality of common semiconductor layers including at least one first common semiconductor layer includes at least one organic p-type dopant and at least one second common semiconductor layer, wherein the first common semiconductor layer is at least partially configured to be in direct contact with the anode layer, and the second semiconductor layer is disposed between an emitter layer (preferably a common emitter layer) and the first common semiconductor layer (preferably a hole injection layer); The first common semiconductor layer and the second common semiconductor layer together have a sheet resistance of ≥ 50 gigahertz per square meter, wherein the sheet resistance of the first common semiconductor layer and the second common semiconductor layer are measured together individually.

[0095] According to another embodiment of an active-matrix OLED display, the active-matrix OLED display includes a plurality of OLED pixels, wherein each pixel itself includes an organic layer stack, and each layer of the organic layer stack can form a common semiconductor layer, wherein at least one of the first OLED pixel and the second OLED pixel includes an anode layer, wherein the anode layers of the first OLED pixel and the second OLED pixel are optionally separated by a pixel definition layer, and wherein at least one of the first OLED pixels and at least one of the second OLED pixels includes a common cathode layer and at least one organic layer stack, the at least one organic layer stack including a plurality of semiconductor layers, and the plurality of semiconductor layers including at least two or more common semiconductor layers, wherein the common semiconductor layer of the organic layers is disposed between the common cathode layer and the anode layer, and the plurality of common semiconductor layers including at least one first common semiconductor layer includes at least one organic p-type dopant and at least one second common semiconductor layer, wherein the first common semiconductor layer is at least partially configured to be in direct contact with the anode layer, and the second semiconductor layer is disposed between an emitter layer (preferably a common emitter layer) and the first common semiconductor layer (preferably a hole injection layer); The first common semiconductor layer and the second common semiconductor layer together have a sheet resistance of ≥ 50 gigaohms per square meter, wherein the sheet resistance of the first common semiconductor layer and the second common semiconductor layer are measured together separately, wherein for the sheet resistance measurement, the second common semiconductor layer is deposited directly on the first common semiconductor layer, and the first common semiconductor layer is deposited on the measurement electrode (preferably, an ITO electrode).

[0096] According to another embodiment of the active-matrix OLED display, the common first hole injection layer and the common hole transport layer together have a sheet resistor selected from ≥100 gigaohms per square, ≥200 gigaohms per square, ≥300 gigaohms per square, ≥400 gigaohms per square, ≥500 gigaohms per square, ≥1000 gigaohms per square, ≥2500 gigaohms per square, ≥5000 gigaohms per square, ≥10000 gigaohms per square, ≥20000 gigaohms per square, ≥30000 gigaohms per square, ≥40000 gigaohms per square, or ≥50000 gigaohms per square.

[0097] According to another embodiment of the active-matrix OLED display, the common first hole injection layer and the common hole transport layer together have a sheet resistance selected from ≥ 100 gigaohms per square, ≥ 200 gigaohms per square, ≥ 300 gigaohms per square, ≥ 400 gigaohms per square, ≥ 500 gigaohms per square, ≥ 1000 gigaohms per square, ≥ 2500 gigaohms per square, ≥ 5000 gigaohms per square, ≥ 10000 gigaohms per square, ≥ 20000 gigaohms per square, ≥ 30000 gigaohms per square, ≥ 40000 gigaohms per square, or ≥ 50000 gigaohms per square, wherein the sheet resistance of the common first hole injection layer and the common hole transport layer is measured together separately.

[0098] According to another embodiment of an active-matrix OLED display, the common first hole injection layer and the common hole transport layer together have a sheet resistance selected from ≥100 gigaohms per square, ≥200 gigaohms per square, ≥300 gigaohms per square, ≥400 gigaohms per square, ≥500 gigaohms per square, ≥1000 gigaohms per square, ≥2500 gigaohms per square, ≥5000 gigaohms per square, ≥10000 gigaohms per square, ≥20000 gigaohms per square, ≥30000 gigaohms per square, ≥40000 gigaohms per square, or ≥50000 gigaohms per square, wherein the sheet resistance of the common first hole injection layer and the common hole transport layer are measured together separately, wherein for the sheet resistance measurement, the common hole transport layer is directly deposited on the common first hole injection layer, and the common first hole injection layer is deposited on the measuring electrode (preferably, an ITO electrode).

[0099] According to another embodiment of an active-matrix OLED display, the common organic layer stack further includes a common electron transport layer, preferably disposed between the emitter layer and the common cathode layer.

[0100] According to another embodiment of an active-matrix OLED display, the common organic layer stack further includes a common organic layer selected from the group including a common electron injection layer, a common hole blocking layer and / or an electron transport layer, preferably the common electron injection layer being in direct contact with the common cathode layer.

[0101] According to another embodiment of an active matrix OLED display, the pixel definition layer is not positively charged and / or is not an anode or includes an anode material, preferably the pixel definition layer includes a Si-based compound, SiN, a non-positively charged oligomer and / or polymer material.

[0102] According to another embodiment of an active-matrix OLED display, the first common semiconductor layer (preferably, the common first hole injection layer) has a layer thickness of ≥ 1 nm and ≤ 100 nm, preferably ≥ 2 nm and ≤ 50 nm, more preferably ≥ 3 nm and ≤ 40 nm, more preferably ≥ 4 nm and ≤ 30 nm, more preferably ≥ 5 nm and ≤ 20 nm, more preferably ≥ 6 nm and ≤ 15 nm, and more preferably ≥ 8 nm and ≤ 10 nm.

[0103] According to another embodiment of an active-matrix OLED display, the second common semiconductor layer (preferably, a common hole transport layer) has a layer thickness of ≥ 5 nm and ≤ 250 nm, preferably ≥ 10 nm and ≤ 240 nm, more preferably ≥ 15 nm and ≤ 230 nm, more preferably ≥ 20 nm and ≤ 220 nm, more preferably ≥ 25 nm and ≤ 210 nm, more preferably ≥ 30 nm and ≤ 200 nm, more preferably ≥ 35 nm and ≤ 190 nm, more preferably ≥ 40 nm and ≤ 180 nm, and more preferably ≥ 50 nm and ≤ 150 nm.

[0104] According to another embodiment of an active-matrix OLED display, the second common semiconductor layer (preferably a common hole transport layer) comprises a compound having the energy of its highest occupied molecular orbital, expressed on an absolute scale with a reference vacuum level of zero, calculated in the package program TURBOMOLE V6.5 using the hybrid function B3LYP with a Gaussian 6–31G* basis set to a range of < 4.27 eV to ≥ 6.0 eV, < 4.3 eV to ≥ 5.5 eV, preferably < -4.5 eV to ≥ -5.4 eV, and more preferably < -4.6 eV to ≥ 5.3 eV.

[0105] According to another embodiment of an active-matrix OLED display, the electron blocking layer comprises a compound having the energy of its highest occupied molecular orbital, expressed on an absolute scale with a reference vacuum level of zero, calculated using the hybrid function B3LYP with a Gaussian 6–31G* basis set in the TURBOMOLE V6.5 package to a range of < 4.7 eV to ≥ 6.0 eV, < 4.8 eV to ≥ 5.5 eV, preferably < -4.9 eV to ≥ -5.4 eV, and more preferably < -5.0 eV to ≥ 5.3 eV.

[0106] According to another embodiment of an active matrix OLED display, the electron blocking layer has a layer thickness of ≥1 nm and ≤20 nm, preferably ≥2 nm and ≤18 nm, more preferably ≥3 nm and ≤16 nm, more preferably ≥4 nm and ≤14 nm, more preferably ≥5 nm and ≤12 nm, more preferably ≥6 nm and ≤11 nm, and more preferably ≥7 nm and ≤10 nm.

[0107] According to another embodiment of an active matrix OLED display, at least one anode layer includes a first anode sublayer and a second anode sublayer, wherein the first anode sublayer includes a first metal having a work function in the range of ≥4 and ≤6 eV, and the second anode sublayer includes a transparent conductive oxide; and the second anode sublayer is disposed closer to the common hole injection layer.

[0108] According to another embodiment of an active-matrix OLED display, the active-matrix OLED display includes a driving circuit configured to drive the pixels of a plurality of organic light-emitting diode pixels respectively.

[0109] According to another embodiment of an active matrix OLED display, a first common semiconductor layer is shared by a plurality of OLED pixels, and / or a second common semiconductor layer is shared by a plurality of OLED pixels, preferably all common semiconductor layers are shared by a plurality of OLED pixels.

[0110] According to another embodiment of an active-matrix OLED display, each individual pixel may have its own anode, which may not contact the anodes of other individual pixels. Semiconductor layer

[0111] According to one embodiment, at least two common semiconductor layers include organic semiconductor layers, and preferably, at least two common semiconductor layers are non-emissive.

[0112] In the context of this specification, the terms "inherently non-emissive" or "non-emissive" mean that the contribution of the common semiconductor layer to the visible light emission spectrum from an organic electronic device (preferably an OLED or display device) is less than 10%, and more preferably less than 5%, relative to the visible light emission spectrum. The visible light emission spectrum is an emission spectrum with wavelengths from about ≥380 nm to about ≤780 nm.

[0113] According to an embodiment of the present invention, at least one common semiconductor layer (preferably, a first common semiconductor layer) may be provided and / or provided adjacent to the anode, wherein the anode is not formed as a common layer.

[0114] According to one embodiment of the present invention, at least one common semiconductor layer (preferably a first common semiconductor layer) is in direct contact with the anode, wherein the anode is not formed as a common layer. Each individual pixel may have its own anode, which may not be in contact with the anodes of other individual pixels.

[0115] According to an embodiment of the present invention, at least the first common semiconductor layer of at least two common semiconductor layers is a common hole injection layer.

[0116] According to an embodiment of the present invention, the at least first common semiconductor layer serving as a common hole injection layer may include at least one organic p-type dopant. Matrix compound

[0117] According to one embodiment, the semiconductor layer may include at least one matrix compound, wherein the at least one matrix compound is a nonpolymer compound, preferably, the matrix compound is a covalent matrix compound or a substantially covalent matrix compound.

[0118] Preferably, at least one common semiconductor layer comprises a covalent matrix compound or a substantially covalent matrix compound.

[0119] In addition to the hole injection material, the hole injection layer may also include at least one matrix covalent matrix compound and / or at least one substantial covalent matrix compound.

[0120] Preferred examples of covalent matrix compounds are organic compounds, primarily composed of covalently bonded C, H, O, N, and S, and optionally also including covalently bonded B, P, As, and Se. Other examples of organic compounds that can serve as organic covalent matrix compounds or substantially covalent matrix compounds include organometallic compounds comprising covalently bonded carbon-metal complexes, metal complexes comprising organic ligands, and metal salts of organic acids.

[0121] In one embodiment, the covalent matrix compound or substantially covalent matrix compound lacks metal atoms, and most of its framework atoms are selected from C, O, S, and N. Alternatively, the covalent matrix compound or substantially covalent matrix compound lacks metal atoms, and most of its framework atoms are selected from C and N.

[0122] According to one embodiment, the substantially covalent matrix compound may have a molecular weight Mw of ≥400 and ≤2000 g / mol, preferably ≥450 and ≤1500 g / mol, more preferably ≥500 and ≤1000 g / mol, even more preferably ≥550 and ≤900 g / mol, and even more preferably ≥600 and ≤800 g / mol.

[0123] In one embodiment, the HOMO energy level of the covalent matrix compound or the substantially covalent matrix compound may be more negative than the HOMO energy level of N2,N2,N2',N2',N7,N7,N7',N7'-octa(4-methoxyphenyl)-9,9'-spirodi[furan]-2,2',7,7'-tetraamine (CAS 207739-72-8) as measured under the same conditions.

[0124] In one embodiment, the calculated HOMO level of the covalent matrix compound or the substantially covalent matrix compound may be more negative than -4.27 eV, preferably more negative than -4.3 eV, or more negative than -4.5 eV, or more negative than -4.6 eV, or more negative than -4.65 eV.

[0125] According to another embodiment, the semiconductor layer further comprises a covalent matrix compound or a substantially covalent matrix compound having an oxidation potential that, when measured by cyclic voltammetry in dichloromethane, is more positive than -0.2 V and more negative than 1.22 V, preferably more positive than -0.18 V and more negative than 1.12 V. Under these conditions, the oxidation potential of spiro-MeO-TAD (CAS 207739-72-8) is -0.07 V.

[0126] In one embodiment, the HOMO energy level of the covalent matrix compound or the substantially covalent matrix compound may be more negative than the HOMO energy level of N2,N2,N2',N2',N7,N7,N7',N7'-octa(4-methoxyphenyl)-9,9'-spirodi[furo]-2,2',7,7'-tetraamine (CAS 207739-72-8) as measured under the same conditions, and more positive than the HOMO energy level of N4,N4'''-di(naphthyl-1-yl)-N4,N4'''-biphenyl-[1,1':4',1'':4'',1'''-tetraphenyl]-4,4'''-diamine.

[0127] In one embodiment, the covalent matrix compound or substantially covalent matrix compound may be free of alkoxy groups.

[0128] In one embodiment, when calculations are performed using TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany), the HOMO level of a covalent matrix compound or a substantially covalent matrix compound, expressed on an absolute scale with a reference vacuum level of zero, can be selected in the range of < -4.27 eV and ≥ -5.3 eV, or in the range of < -4.3 eV and ≥ -5.3 eV, or in the range of < -4.5 eV and ≥ -5.3 eV, or in the range of < -4.6 eV and ≥ -5.3 eV, by applying a hybrid function B3LYP with a basis set of 6–31 G* in the gas phase.

[0129] In one embodiment, when using TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany) for calculations, the calculated HOMO level of a covalent matrix compound or a substantially covalent matrix compound, expressed on an absolute scale with a reference vacuum level of zero, can be selected in the range of < -4.27 eV and > -4.84 eV, or in the range of < -4.3 eV and > -4.84 eV, or in the range of < -4.5 eV and > -4.84 eV, or in the range of < -4.5 eV and > -4.84 eV, or in the range of < -4.6 eV and > -4.84 eV, by applying a hybrid function B3LYP with a basis set of 6–31 G* in the gas phase.

[0130] In one embodiment, when using TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany) for calculations, the calculated HOMO level of a covalent matrix compound or a substantially covalent matrix compound, expressed on an absolute scale with a reference vacuum level of zero, can be selected in the range of < -4.27 eV and > -4.8 eV, or in the range of < -4.3 eV and > -4.8 eV, or in the range of < -4.5 eV and > -4.8 eV, or in the range of < -4.5 eV and > -4.8 eV, or in the range of < -4.6 eV and > -4.8 eV, or in the range of < -4.65 eV and > -4.8 eV, when using TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany), by applying a hybrid function B3LYP with a basis set of 6–31 G* in the gas phase.

[0131] Preferably, the covalent matrix compound or substantially covalent matrix compound includes at least one monoarylamine compound, or one diarylamine compound, or one triarylamine compound. According to an embodiment of an organic electronic device, the common hole injection layer and / or the common hole transport layer may include a diarylamine compound or a triarylamine compound.

[0132] According to an embodiment of an organic electronic device, the common hole injection layer and / or common hole transport layer may include compounds of formula (2) or formula (3): (2), (3), wherein T1, T2, T3, T4 and T5 are independently selected from single bond, phenyl, biphenyl, terphenyl or naphthenylene, preferably single bond or phenyl; T6 is selected from substituted or unsubstituted phenyl, biphenyl, terphenyl or naphthenylene, wherein the substituent on the phenyl is selected from C6 to C18 aryl, C3 to C18 heteroaryl, phenyl, biphenyl, carbazole, phenylcarbazole, preferably biphenyl or 9-phenylcarbazole; Ar1, Ar2, Ar3, Ar4, and Ar5 are independently selected from substituted or unsubstituted C6 to C20 aryl groups, or substituted or unsubstituted C3 to C20 heteroaryl groups, substituted or unsubstituted biphenyls, substituted or unsubstituted phenanthrene, substituted 9-phenanthrene, substituted 9,9-phenanthrene, substituted or unsubstituted naphthalene, substituted or unsubstituted anthracene, substituted or unsubstituted phenanthrene, substituted or unsubstituted pyrene, substituted or unsubstituted... Perylene, substituted or unsubstituted terphenylene, substituted or unsubstituted tetraphenylene, substituted or unsubstituted tetraphenone, substituted or unsubstituted dibenzofuran, substituted or unsubstituted dibenzothiophene, substituted or unsubstituted dibenzopiperanone, substituted or unsubstituted carbazole, substituted 9-phenylcarbazole, substituted or unsubstituted aziridine, substituted or unsubstituted dibenzo[b,f]aziridine, substituted or unsubstituted 9,9'-spirodi[furan] Substituted or unsubstituted 9,9'-spirodi[furan] (having at least one fused aromatic ring), substituted or unsubstituted spiro[furan-9,9'-dibenzopiperan], substituted or unsubstituted aromatic fused ring systems (comprising two aromatic 6-membered rings and two aromatic 5-membered rings, wherein at least one 5-membered ring includes a heteroatom), substituted or unsubstituted aromatic fused ring systems (comprising two aromatic 6-membered rings and two aromatic 5-membered rings, wherein at least one 5-membered ring includes an oxygen atom), or substituted or unsubstituted Aromatic fused ring systems (comprising at least three substituted or unsubstituted aromatic rings selected from the group consisting of substituted or unsubstituted non-heterocyclic 5-membered rings, substituted or unsubstituted heterocyclic 5-membered rings, substituted or unsubstituted 6-membered rings and / or substituted or unsubstituted 7-membered rings), substituted or unsubstituted cyclohexane, substituted or unsubstituted cyclohexane (having cyclic substituted or unsubstituted heterocyclic or non-heterocyclic systems comprising 2 to 6 substituted or unsubstituted 5, 6 or 7-membered rings), or fused ring systems comprising 2 to 6 substituted or unsubstituted 5 to 7-membered rings, wherein these rings are selected from the group consisting of (i) unsaturated 5 to 7-membered heterocyclic rings, (ii) 5 to 6-membered aromatic heterocyclic rings, (iii) unsaturated 5 to 7-membered non-heterocyclic rings, (iv) 6-membered aromatic non-heterocyclic rings);The substituents of Ar1, Ar2, Ar3, Ar4, and Ar5 are selected from the group consisting of the following groups, which may be the same or different: H, D, F, C(=O)R2, CN, Si(R2)3, P(=O)(R2)2, OR2, S(=O)R2, S(=O)2R2, substituted or unsubstituted straight-chain alkyl groups having 1 to 20 carbon atoms, substituted or unsubstituted branched alkyl groups having 1 to 20 carbon atoms, and substituted or unsubstituted branched alkyl groups having 3 to 20 carbon atoms. Substituted or unsubstituted cycloalkyl groups, substituted or unsubstituted alkenyl or alkynyl groups having 2 to 20 carbon atoms, substituted or unsubstituted alkoxy groups having 1 to 20 carbon atoms, substituted or unsubstituted aromatic ring systems having 6 to 40 aromatic ring atoms, and substituted or unsubstituted aromatic heterocyclic systems having 5 to 40 aromatic ring atoms, unsubstituted C6 to C18 aryl groups, unsubstituted C3 to C18 heteroaryl groups, fused ring systems (including 2 to 6... R2 is an unsubstituted 5- to 7-membered ring, and these rings are selected from the group consisting of: unsaturated 5- to 7-membered heterocycles, 5- to 6-membered aromatic heterocycles, unsaturated 5- to 7-membered non-heterocycles, and 6-membered aromatic non-heterocycles, wherein R2 is selected from H, D, straight-chain alkyl groups having 1 to 6 carbon atoms, branched alkyl groups having 1 to 6 carbon atoms, cycloalkyl groups having 3 to 6 carbon atoms, alkenyl or ynyl groups having 2 to 6 carbon atoms, C6 to C18 aryl groups, or C3 to C18 heteroaryl groups.

[0133] Preferably, unless otherwise defined, the substituents of Ar1, Ar2, Ar3, Ar4, and Ar5 are selected from the group consisting of: H, straight-chain alkyl groups having 1 to 6 carbon atoms, branched alkyl groups having 1 to 6 carbon atoms, cycloalkyl groups having 3 to 6 carbon atoms, alkenyl or alkynyl groups having 2 to 6 carbon atoms, alkoxy groups having 1 to 6 carbon atoms, C6 to C18 aryl groups, C3 to C18 heteroaryl groups, fused rings. The system comprises 2 to 4 unsubstituted 5 to 7-membered rings, and these rings are selected from the group consisting of: unsaturated 5 to 7-membered heterocycles, 5 to 6-membered aromatic heterocycles, unsaturated 5 to 7-membered non-heterocycles, and 6-membered aromatic non-heterocycles; preferably, the substituents are selected from the group consisting of: H, straight-chain alkyl having 1 to 4 carbon atoms, branched alkyl having 1 to 4 carbon atoms, cycloalkyl having 3 to 4 carbon atoms, and / or phenyl.

[0134] Therefore, the compounds of formula (2) or (3) can have a rate-starting temperature suitable for mass production.

[0135] According to an embodiment of an organic electronic device, the covalent matrix compound or substantially covalent matrix compound (preferably a matrix compound of a common hole injection layer or a common hole transport layer) may include compounds of formula (2) or formula (3): (2), (3), wherein T1, T2, T3, T4 and T5 may be independently selected from single bond, phenyl, biphenyl, triphenyl or naphthyl, preferably single bond or phenyl; T6 is phenyl, biphenyl, triphenyl or naphthyl; Ar1, Ar2, Ar3, Ar4, and Ar5 can be independently selected from unsubstituted C6 to C20 aryl groups, or unsubstituted C3 to C20 heteroaryl groups, unsubstituted biphenyls, unsubstituted fenenyls, substituted 9-fenenyls, substituted 9,9-fenenyls, unsubstituted naphthalenes, unsubstituted anthracene, unsubstituted phenanthrenes, unsubstituted pyrene, unsubstituted perylene, unsubstituted triphenylbenzenes, unsubstituted tetraphenylbenzenes, unsubstituted tetraphenones, unsubstituted dibenzofurans, unsubstituted dibenzothiophenes, unsubstituted dibenzopiperanones, unsubstituted carbazoles, substituted 9-phenylcarbazoles, unsubstituted aziridines, unsubstituted dibenzo[b,f]aziridines, and unsubstituted 9,9'-spirodi[fenenyls]. Unsubstituted spiro[9,9'-dibenzopiperan] or unsubstituted aromatic fused ring systems (comprising at least three unsubstituted aromatic rings selected from the group consisting of: unsubstituted non-hetero-5-membered rings, unsubstituted hetero-5-membered rings, unsubstituted 6-membered rings and / or unsubstituted 7-membered rings), unsubstituted spiro[9,9'-dibenzopiperan] or fused ring systems (comprising 2 to 6 unsubstituted 5 to 7-membered rings, and these rings being selected from the group consisting of: (i) unsaturated 5 to 7-membered heterocycles, (ii) 5 to 6-membered aromatic heterocycles, (iii) unsaturated 5 to 7-membered non-heterocycles, and (iv) 6-membered aromatic non-heterocycles).

[0136] According to an embodiment of an organic electronic device, the covalent matrix compound or substantial covalent matrix compound (preferably a covalent matrix compound or substantial covalent matrix compound of a common hole injection layer or a common hole transport layer) may include compounds of formula (2) or formula (3): (2), (3), wherein T1, T2, T3, T4 and T5 may be independently selected from single bond, phenyl, biphenyl, triphenyl or naphthyl, preferably selected from single bond or phenyl; T6 is phenyl, biphenyl, triphenyl or naphthyl; Ar1, Ar2, Ar3, Ar4, and Ar5 can be independently selected from unsubstituted C6 to C20 aryl, or unsubstituted C3 to C20 heteroaryl, unsubstituted biphenyl, unsubstituted fumonisin, substituted 9-fumonisin, substituted 9,9-fumonisin, unsubstituted naphthalene, unsubstituted anthracene, unsubstituted phenanthrene, unsubstituted pyrene, unsubstituted perylene, unsubstituted triphenylbenzene, unsubstituted tetraphenylbenzene, unsubstituted tetraphenone, unsubstituted dibenzofuran, unsubstituted dibenzothiophene, unsubstituted dibenzopiperan, unsubstituted carbazole, substituted 9-phenylcarbazole, unsubstituted aziridine, unsubstituted dibenzo[b,f]aziridine, unsubstituted 9,9'-spirodi[fumonisin], and unsubstituted spiro[fumonisin-9,9'-dibenzopiperan.

[0137] Therefore, the compounds of formula (2) or (3) can have a rate-starting temperature suitable for mass production.

[0138] According to one embodiment, T1, T2, T3, T4, and T5 may be independently selected from single bonds, extended phenyl groups, extended biphenyl groups, or extended triphenyl groups. According to one embodiment, T1, T2, T3, T4, and T5 may be independently selected from extended phenyl groups, extended biphenyl groups, or extended triphenyl groups, and one of T1, T2, T3, T4, and T5 is a single bond. According to one embodiment, T1, T2, T3, T4, and T5 may be independently selected from extended phenyl groups or extended biphenyl groups, and one of T1, T2, T3, T4, and T5 is a single bond. According to one embodiment, T1, T2, T3, T4, and T5 may be independently selected from extended phenyl groups or extended biphenyl groups, and two of T1, T2, T3, T4, and T5 are single bonds.

[0139] According to one embodiment, T1, T2, T3, T4, and T5, or T1, T2, and T3, may be independently selected from phenylene oxides, and one of T1, T2, T3, T4, and T5, or one of T1, T2, and T3, is a single bond. According to one embodiment, T1, T2, T3, T4, and T5, or T1, T2, and T3, may be independently selected from phenylene oxides, and two of T1, T2, T3, T4, and T5, or two of T1, T2, and T3, are single bonds.

[0140] According to one embodiment, T6 may be an extended phenyl group, an extended biphenyl group, or an extended triphenyl group. According to one embodiment, T6 may be an extended phenyl group. According to one embodiment, T6 may be an extended biphenyl group. According to one embodiment, T6 may be an extended triphenyl group.

[0141] According to one embodiment, Ar1, Ar2, Ar3, Ar4 and Ar5 can be independently selected from D1 to D16: where the asterisk "*" indicates the bond position.

[0142] According to one embodiment, Ar1, Ar2, Ar3, Ar4 and Ar5 may be independently selected from D1 to D15; alternatively, they may be selected from D1 to D10 and D13 to D15.

[0143] According to one embodiment, Ar1, Ar2, Ar3, Ar4 and Ar5 can be independently selected from the group consisting of: D1, D2, D5, D7, D9, D10, D13 to D16.

[0144] When Ar1, Ar2, Ar3, Ar4 and Ar5 are selected within a range suitable for mass production, the rate start temperature can be within this range.

[0145] "The covalent matrix compound of formula (2) or formula (3)" can be used in the common hole injection layer and / or can be used as a matrix compound for common hole transport.

[0146] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include at least 1 to 6 substituted or unsubstituted aromatic fused ring systems comprising aromatic heterocycles.

[0147] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include at least 1 to 6 substituted or unsubstituted aromatic fused ring systems comprising aromatic heterocycles, and at least 1 to 3 substituted or unsubstituted unsaturated 5 to 7-membered heterocycles, preferably including 2 to 5 substituted or unsubstituted aromatic fused ring systems comprising aromatic heterocycles.

[0148] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include at least 1 to 6 substituted or unsubstituted aromatic fused ring systems comprising aromatic heterocycles, and at least 1 to 3 substituted or unsubstituted unsaturated 5 to 7-membered heterocycles, preferably including 2 to 5 substituted or unsubstituted aromatic fused ring systems comprising aromatic heterocycles, and at least 1 to 3 substituted or unsubstituted unsaturated 5 to 7-membered heterocycles, more preferably including 3 or 4 substituted or unsubstituted aromatic fused ring systems comprising aromatic heterocycles, and optionally at least 1 to 3 substituted or unsubstituted unsaturated 5 to 7-membered heterocycles, and further preferably, the aromatic fused ring system comprising aromatic heterocycles is unsubstituted, and optionally at least 1 to 3 unsubstituted unsaturated 5 to 7-membered heterocycles.

[0149] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include at least 1 to 6 substituted or unsubstituted aromatic fused ring systems, preferably 2 to 5 substituted or unsubstituted aromatic fused ring systems, and more preferably 3 or 4 substituted or unsubstituted aromatic fused ring systems.

[0150] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include at least 1 to 6 substituted or unsubstituted aromatic fused ring systems, preferably 2 to 5 substituted or unsubstituted aromatic fused ring systems, and more preferably 3 or 4 substituted or unsubstituted aromatic fused ring systems, which include substituted or unsubstituted heteroaromatic rings.

[0151] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include at least 1 to 3 or 2 substituted or unsubstituted unsaturated 5 to 7-membered heterocycles.

[0152] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include at least 1 to 3 or 2 heterocycles with substituted or unsubstituted unsaturated 7-membered rings.

[0153] According to one embodiment, the substituted or unsubstituted aromatic fused ring system of the covalent matrix compound or substantially covalent matrix compound of formula (2) or formula (3) may include at least 1 to 3 or 2 substituted or unsubstituted unsaturated 5 to 7-membered heterocycles.

[0154] According to one embodiment, the substituted or unsubstituted aromatic fused ring system of the covalent matrix compound or substantially covalent matrix compound of formula (2) or formula (3) may include at least 1 to 3 or 2 heterocycles of substituted or unsubstituted unsaturated 7-membered rings.

[0155] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include at least 1 to 6 substituted or unsubstituted aromatic fused ring systems, preferably 2 to 5 substituted or unsubstituted aromatic fused ring systems, and more preferably 3 to 4 substituted or unsubstituted aromatic fused ring systems, wherein the aromatic fused ring system includes a heterocycle of a substituted or unsubstituted unsaturated 5 to 7-membered ring.

[0156] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include at least 1 to 6 substituted or unsubstituted aromatic fused ring systems, preferably 2 to 5 substituted or unsubstituted aromatic fused ring systems, and more preferably 3 or 4 substituted or unsubstituted aromatic fused ring systems, the aromatic fused ring systems including substituted or unsubstituted heteroaromatic rings, and wherein the aromatic fused ring systems include substituted or unsubstituted unsaturated 5 to 7-membered heterocycles.

[0157] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include at least 1 to 6 substituted or unsubstituted aromatic fused ring systems, preferably 2 to 5 substituted or unsubstituted aromatic fused ring systems, and more preferably 3 or 4 substituted or unsubstituted aromatic fused ring systems, wherein the aromatic fused ring system includes at least 1 to 3 or 2 substituted or unsubstituted unsaturated 5 to 7-membered heterocycles.

[0158] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include at least 1 to 6 substituted or unsubstituted aromatic fused ring systems, preferably 2 to 5 substituted or unsubstituted aromatic fused ring systems, and more preferably 3 or 4 substituted or unsubstituted aromatic fused ring systems, which include substituted or unsubstituted aromatic heterocycles, and wherein the aromatic fused ring system includes at least 1 to 3 or 2 substituted or unsubstituted unsaturated 5 to 7-membered heterocycles.

[0159] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include: - a substituted or unsubstituted aromatic fused ring system having at least ≥2 to ≤6 (preferably ≥3 to ≤5) or 4 fused aromatic rings selected from the group consisting of: substituted or unsubstituted aromatic non-heterocyclic rings, substituted or unsubstituted hetero 5-membered rings, substituted or unsubstituted 6-membered rings and / or substituted or unsubstituted unsaturated 5 to 7-membered rings of heterocycles; or - an unsubstituted aromatic fused ring system having at least ≥2 to ≤6, preferably ≥3 to ≤5, or 4 fused aromatic rings selected from the group consisting of: unsubstituted aromatic non-heterocyclic rings, unsubstituted hetero 5-membered rings, unsubstituted 6-membered rings and / or unsubstituted unsaturated 5 to 7-membered rings of heterocycles.

[0160] It should be noted here that the term "aromatic fused ring system" may include at least one aromatic ring and at least one substituted or unsubstituted unsaturated 5- to 7-membered ring. It should be noted here that the substituted or unsubstituted unsaturated 5- to 7-membered ring may not be an aromatic ring.

[0161] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include at least 1 to 6, preferably 2 to 5, or more preferably 3 or 4 substituted or unsubstituted aromatic fused ring systems having: - at least one unsaturated 5-membered ring, and / or - at least one unsaturated 6-membered ring, and / or - at least one unsaturated 7-membered ring; wherein, preferably at least one unsaturated 5-membered ring and / or at least one unsaturated 7-membered ring includes at least 1 to 3 (preferably 1) heteroatoms.

[0162] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include at least 1 to 6, preferably 2 to 5, or more preferably 3 or 4 substituted or unsubstituted aromatic fused ring systems having: - at least one aromatic 5-membered ring, and / or - at least one aromatic 6-membered ring, and / or - at least one aromatic 7-membered ring; wherein, preferably, at least one aromatic 5-membered ring and / or at least one aromatic 7-membered ring includes at least 1 to 3 (preferably 1) heteroatoms; wherein the substituted or unsubstituted aromatic fused ring system includes at least 1 to 3 or 2 substituted or unsubstituted unsaturated 5 to 7-membered heterocycles.

[0163] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include: - at least 6 to ≤12, preferably 7 to ≤11, more preferably 8 to ≤10 or 9 aromatic rings; and / or - at least 4 to ≤11, preferably 5 to ≤10, more preferably 6 to ≤9, or even more preferably 7 or 8 aromatic non-heterocyclic rings, preferably aromatic non-heterocyclic rings being aromatic C6 rings; and / or - at least 1 to ≤4, preferably 2 or 3 aromatic 5-membered rings, preferably heteroaromatic 5-membered rings; and / or - at least 1 or 2 unsaturated 5- to 7-membered heterocyclic rings, preferably at least 1 or 2 unsaturated 7-membered heterocyclic rings; - At least ≥6 to ≤12, preferably ≥7 to ≤11, more preferably ≥8 to ≤10 or 9 aromatic rings, wherein at least ≥4 to ≤11, preferably ≥5 to ≤10, more preferably ≥6 to ≤9, or even more preferably 7 or 8 aromatic rings are aromatic non-heterocyclic rings, and at least ≥1 to ≤4, preferably 2 or 3 aromatic rings are aromatic heterocyclic rings, wherein the total number of aromatic non-heterocyclic and aromatic heterocyclic rings does not exceed 12 aromatic rings; and / or - at least ≥6 to ≤12, preferably ≥7 to ≤11, more preferably ≥8 to ≤10 or 9 aromatic rings, wherein at least ≥ The aromatic rings are 4 to ≤11, preferably ≥5 to ≤10, more preferably ≥6 to ≤9, or even more preferably 7 or 8 aromatic non-heterocyclic rings, and at least ≥1 to ≤4, preferably 2 or 3 aromatic heterocyclic rings, wherein the total number of aromatic non-heterocyclic rings and aromatic heterocyclic rings does not exceed 12 aromatic rings; and the common hole injection layer or common hole transport layer according to formula (1) includes at least ≥1 to ≤4, preferably 2 or 3 aromatic 5-membered rings, preferably heteroaromatic 5-membered rings, and / or the compound according to formula (1) includes at least 1 or 2 heterocyclic rings of unsaturated 5 to 7-membered rings, preferably at least 1 or 2 heterocyclic rings of unsaturated 7-membered rings.

[0164] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include heteroatoms selected from the group consisting of O, S, N, B or P, preferably selected from the group consisting of O, S or N.

[0165] According to one embodiment, the covalent matrix compound of formula (2) or formula (3) may include at least 1 to 6, preferably 2 to 5, or more preferably 3 or 4 substituted or unsubstituted aromatic fused ring systems having: - at least one aromatic 5-membered ring, and / or - at least one aromatic 6-membered ring, and / or - at least one aromatic 7-membered ring; wherein preferably at least one aromatic 5-membered ring and / or at least one aromatic 7-membered ring includes at least 1 to 3, preferably 1 heteroatom; wherein the substituted or unsubstituted aromatic fused ring system optionally includes at least 1 to 3 or 2 substituted or unsubstituted unsaturated 5 to 7-membered ring heterocycles; and wherein the substituted or unsubstituted aromatic fused ring system includes heteroatoms that may be selected from the group consisting of O, S, N, B, P or Si, preferably, the heteroatoms may be selected from the group consisting of O, S or N.

[0166] According to one embodiment, the matrix covalent compound of formula (2) or formula (3) may not contain heteroatoms that are not part of an aromatic ring and / or part of an unsaturated 7-membered ring. Preferably, the compound of formula (1) may not contain N atoms except N atoms that are part of an aromatic ring or part of an unsaturated 7-membered ring.

[0167] According to one embodiment, the covalent matrix compound according to formula (1) includes at least one naphthyl group, carbazole group, dibenzofuran group, dibenzothiophene group and / or substituted genoyl group, wherein the substituent is independently selected from methyl, phenyl or genoyl.

[0168] According to one embodiment of the electronic device, the covalent matrix compound or substantially covalent matrix compound is selected from F1 to F21:

[0169] The matrix compound is suitable for electron blocking layers selected from F22 to F25: (F22), (F23), (F24), (F25).

[0170] The covalent matrix compound of the hole injection layer may not contain HTM014, HTM081, HTM163, HTM222, EL-301, HTM226, HTM355, HTM133, HTM334, HTM604, and EL-22T. Abbreviations indicate the manufacturer's name, such as Merck or Lumtec.

[0171] According to a further preferred embodiment, the covalent matrix compound or substantially covalent matrix compound has formulas (T-1) to (T-6) as shown in Table 1. Table 1 name Chemical formula Calculated HOMO (eV) N,N'-bis-(3-methylphenyl)-N,N'-bis-(phenyl)-benzidine (T-1) -4.69 Biphenyl-4-yl(9,9-diphenyl-9H-en-2-yl)-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-amine (T-2) -4.69 N,N'-bis(naphthyl-1-yl)-N,N'-bis(phenyl)-benzidine (T-3) -4.72 N4,N4,N4',N4'-Tetra(biphenyl-4-yl)biphenyl-4,4'-diamine (T-4) -4.73 N4,N4''-Di(naphthyl-1-yl)-N4,N4''-Diphenyl-[1,1':4',1''-terphenyl]-4,4''-diamine (T-5) -4.81 9,9-Dimethyl-N,N-bis(4-(naphthyl-1-yl)phenyl)-9H-furan-2-amine (T-6) -4.84

[0172] According to another embodiment, at least the first common semiconductor layer (preferably common HIL) and / or the common second semiconductor layer (preferably HTL) may comprise a covalent matrix compound or a substantial covalent matrix compound, and may comprise at least about ≥ 0.1 wt.-% to about ≤ 50 wt.-%, preferably about ≥ 1 wt.-% to about ≤ 25 wt.-%, and more preferably about ≥ 2 wt.-% to about ≤ 15 wt.-%, of a covalent matrix compound or a substantial covalent matrix compound, preferably a covalent matrix compound or a substantial covalent matrix compound of formula (2) or formula (3).

[0173] According to one embodiment, a common semiconductor layer is disposed between the anode layer and the light-emitting layer. Preferably, the common semiconductor layer is a common hole injection layer, or the common semiconductor layer is a common hole injection layer and a common hole transport layer. Additional layers

[0174] According to the present invention, in addition to the layers already mentioned above, the organic light-emitting diode may include additional layers or common layers. Exemplary embodiments of the various layers or common layers are described below: Substrate

[0175] The substrate can be any substrate commonly used in the manufacture of electronic devices (preferably organic light-emitting diodes). If light is emitted through the substrate, the substrate should be a transparent or translucent material, such as a glass substrate or a transparent plastic substrate. If light is emitted through the top surface, the substrate can be a transparent or non-transparent material, such as a glass substrate, a plastic substrate, a metal substrate, or a silicon substrate. Anode electrode

[0176] Each individual pixel may have its own anode, which may not come into contact with the anode of other individual pixels.

[0177] The anode electrode, also known as the anode layer, can be formed by deposition or sputtering of a material used to form the anode electrode. The anode or anode layer is not formed as a common anode layer. The material used to form the anode electrode can be a high work function material to facilitate hole injection. The anode material can also be selected from low work function materials (i.e., aluminum). The anode electrode can be a transparent or reflective electrode. Transparent conductive oxides (preferably indium tin oxide (ITO), indium zinc oxide (IZO), tin dioxide (SnO2), zinc aluminum oxide (AlZO), and zinc oxide (ZnO)) can be used to form the anode electrode. The anode electrode can also be formed using metals (typically silver (Ag), gold (Au), or metal alloys).

[0178] According to one embodiment, the anode layer may include a first anode sublayer, a second anode sublayer, and optionally a third anode sublayer. The first anode sublayer includes or is composed of Ag or Au, the second anode sublayer includes or is composed of ITO or IZO, and the third anode sublayer includes or is composed of ITO or IZO. Preferably, the first anode sublayer may include or is composed of Ag, the second anode sublayer may include or is composed of ITO, and the third anode sublayer may include or is composed of ITO. Preferably, the transparent conductive oxides in the second and third anode sublayers may be the same.

[0179] According to one embodiment, the anode layer may include a first anode sublayer, a second anode sublayer, and a third anode sublayer. The first anode sublayer comprises Ag or Au and has a thickness of 100 to 150 nm. The second anode sublayer comprises ITO or IZO and has a thickness of 3 to 20 nm. The third anode sublayer comprises ITO or IZO and has a thickness of 3 to 20 nm.

[0180] The anode layer may include a first anode sublayer and a second anode sublayer, wherein the first anode sublayer includes a first metal with a work function in the range of ≥4 and ≤6eV, and the second anode sublayer includes a transparent conductive oxide (TCO).

[0181] Each individual pixel may have its own anode, which may not contact the anodes of other individual pixels. The anode sublayer is not formed as a common layer.

[0182] According to one embodiment, the anode layer includes a first anode sublayer, a second anode sublayer, and an optional third anode sublayer, wherein the first anode sublayer includes a first metal having a work function in the range of ≥4 and ≤6 eV, and the second anode sublayer includes a transparent conductive oxide (TCO); wherein a hole injection layer is disposed between the first light-emitting layer and the anode layer, the first anode sublayer is disposed closer to the substrate, and the second anode sublayer is disposed closer to the common hole injection layer.

[0183] According to one embodiment, the first metal of the first anode sublayer may have a work function in the range of ≥4.2 and ≤6 eV. The first metal may be selected from metals or metal alloys.

[0184] According to one embodiment, the first metal of the first anode sublayer may be selected from the group consisting of: Ag, Mg, Al, Cr, Pt, Au, Pd, Ni, Nd, Ir, preferably selected from Ag, Au or Al, and more preferably selected from Ag.

[0185] The first anode sublayer may have a thickness in the range of 5 to 200 nm, or 8 to 180 nm, or 8 to 150 nm, or 100 to 150 nm.

[0186] The first anode sublayer can be formed by vacuum thermal evaporation deposition of the first metal.

[0187] It should be understood that the first anode layer is not part of the substrate. Second anode sublayer

[0188] According to one embodiment, the transparent conductive oxide may be selected from the group consisting of indium tin oxide (ITO) or indium zinc oxide (IZO), preferably indium tin oxide (ITO), and more preferably ITO or IZO.

[0189] The first anode sublayer may have a thickness in the range of 3 to 200 nm, or 3 to 180 nm, or 3 to 150 nm, or 3 to 20 nm.

[0190] The second anode sublayer can be formed by sputtering a transparent conductive oxide. The third anode sublayer

[0191] According to one embodiment, the anode layer of an organic light-emitting diode (OLED) may include at least three anode sublayers: a first anode sublayer, a second anode sublayer, and a third anode sublayer. According to one embodiment, in addition to the first and second anode sublayers, the anode layer of the OLED may include a third anode sublayer, wherein the third anode sublayer comprises a transparent conductive oxide, and wherein the third anode sublayer may be disposed between a substrate and the first anode sublayer.

[0192] The third anode sublayer may have a thickness in the range of 3 to 200 nm, or 3 to 180 nm, or 3 to 150 nm, or 3 to 20 nm.

[0193] The third anode sublayer can be formed by sputtering transparent conductive oxide.

[0194] It should be understood that the third anode sublayer is not part of the substrate. Hole injection layer

[0195] A common hole injection layer (HIL) (also referred to as a first common hole injection layer (HIL)) may be formed over a plurality of OLED pixels in an OLED display. In one embodiment, the common HIL may extend over all pixels in the plurality of pixels in the OLED display or over at least two pixels in the plurality of pixels.

[0196] Each individual pixel may have its own anode, which may not come into contact with the anode of other individual pixels.

[0197] Furthermore, the active-matrix OLED display has a driving circuit configured to drive individual pixels of a plurality of pixels provided in the OLED display separately. In one embodiment, the step of driving separately may include separate control of the driving current applied to the individual pixels.

[0198] The common HIL may include or be made of organic p-type dopants, wherein the organic p-type dopants may further include a matrix compound of organic compounds. According to one embodiment, the hole injection layer includes an organic p-type dopant and an optional matrix compound selected from organic compounds and / or metal compounds.

[0199] According to another embodiment, the hole injection layer further includes a matrix compound that may be an organic compound.

[0200] It should be understood that HIL materials are composed of one or more HIL compounds, while the term hole injection material is a broader term used throughout this application for all semiconductor materials, including at least one hole injection material compound. The hole injection matrix material may be composed of one or more organic compounds.

[0201] When using TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany) for calculations, the HOMO level of the covalent matrix compound or the substantially covalent matrix compound can be selected from ≤ -3.5 eV, ≤ -3.6 eV, ≤ -3.7 eV, ≤ -3.8 eV, ≤ -3.9 eV, ≤ -4.0 eV, ≤ -4.5 eV, ≤ -4.6 eV, ≤ -4.7 eV, ≤ -4.8 eV, ≤ -4.85 eV, and ≤ -4.9 eV by applying the mixed function B3LYP with a basis set of 6–31G* in the gas phase to an absolute scale with a reference vacuum level of zero.

[0202] The thickness of the common hole injection layer may be ≥ 1 nm and ≤ 100 nm, preferably ≥ 2 nm and ≤ 50 nm, more preferably ≥ 3 nm and ≤ 40 nm, more preferably ≥ 4 nm and ≤ 30 nm, more preferably ≥ 5 nm and ≤ 20 nm, more preferably ≥ 6 nm and ≤ 15 nm, and more preferably ≥ 8 nm and ≤ 10 nm.

[0203] The HIL can be formed as a common HIL of a plurality of pixels or at least two pixels. The common HIL can extend over all pixels of the plurality of pixels in the OLED display or over at least two pixels of the plurality of pixels.

[0204] The hole injection layer (HIL) can be formed as a common hole injection layer (HIL) on the anode electrode, for example by vacuum deposition, spin coating, printing, casting, slot coating, Langmuir-Blodgett (LB) deposition, or similar methods, wherein the anode electrode is not formed as a common anode electrode layer. When forming the HIL using vacuum deposition, the deposition conditions can vary depending on the compound used to form the HIL and the desired structure and thermal properties of the common HIL. However, generally, vacuum deposition conditions may include a deposition temperature of 100°C to 500°C, a pressure of 10⁻⁸ to 10⁻³ Torr (1 Torr equals 133.322 Pa), and a deposition rate of 0.1 to 10 nm / sec.

[0205] When spin coating or printing is used to form a common HIL, the coating conditions may vary depending on the compound used to form the common HIL and the desired structure and thermal properties of the HIL. For example, coating conditions may include a coating speed of about 2000 rpm to about 5000 rpm and a heat treatment temperature of about 80°C to about 200°C. After coating, the solvent is removed by heat treatment.

[0206] Examples of compounds that can be used to form a common HIL include phthalocyanine compounds (preferably copper phthalocyanine (CuPc)), 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA), TDATA, 2T-NATA, polyaniline / dodecylbenzenesulfonic acid (Pani / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (Pani / CSA), and polyaniline / poly(4-styrenesulfonate) (PANI / PSS).

[0207] The common HIL includes or is composed of p-type dopants, and the p-type dopants may be selected from, but are not limited to, tetrafluorotetracyanoquinone dimethyl ether (F4TCNQ), 2,2'-(perfluoronaphthalene-2,6-dimethylene)dimalonitrile or 2,2',2''-(cyclopropane-1,2,3-trimethylene)tris(2-(p-cyanotetrafluorophenyl)acetonitrile). The common HIL may be selected from hole transport covalent matrix compounds doped with p-type dopants. Typical examples of known doped hole transport materials include: copper phthalocyanine (CuPc) (doped with tetrafluorotetracyanoquinone dimethane (F4TCNQ)), with a LUMO level of approximately -5.2 eV; zinc phthalocyanine (ZnPc) doped with F4TCNQ (HOMO = -5.2 eV); α-NPD (N,N'-bis(naphthyl-1-yl)-N,N'-bis(phenyl)-benzidine) doped with F4TCNQ; and α-NPD doped with 2,2'-(perfluoronaphthyl-2,6-dimethylene)dimalonitrile. The concentration of the p-type dopant can be selected from 1 to 20 wt.-%, preferably from 3 wt.-% to 10 wt.-%.

[0208] According to an embodiment of an organic electronic device, the common hole injection layer may include a first common hole injection sublayer and a second common hole injection sublayer, the first common hole injection sublayer including an organic p-type dopant and an optional metal compound, and the second common hole injection sublayer including a covalent matrix compound or a substantially covalent matrix compound.

[0209] According to another embodiment of the organic electronic device, the common hole injection layer may include a common first hole injection sublayer and a common second hole injection sublayer, the common first hole injection sublayer including an organic p-type dopant and an optional metal compound, the common second hole injection sublayer including a covalent matrix compound or a substantial covalent matrix compound, wherein the common first hole injection sublayer is configured to be closer to the anode layer including the first anode sublayer and the second anode sublayer, and the second common hole injection sublayer is configured to be closer to at least one light-emitting layer.

[0210] According to an embodiment of an organic electronic device, the common hole injection layer may include a first common hole injection sublayer and a second common hole injection sublayer. The first common hole injection sublayer includes an organic p-type dopant and an optional metal compound. The second common hole injection sublayer includes a covalent matrix compound, which includes at least one aromatic amine compound, a diaromatic amine compound, and a triaromatic amine compound. The first common hole injection sublayer is positioned closer to the anode layer, and the second common hole injection sublayer is positioned closer to at least one light-emitting layer.

[0211] According to one embodiment, the hole injection layer material may be selected from compounds of formulas H1 to H12: (H1), (H2), (H3), (H4), (H5), (H6), (H7), (H8), (H9), (H10), (H11), (H12). Hole transport layer (HTL)

[0212] The HTL can be formed as a common HTL of a plurality of pixels or at least two pixels. The common HTL can extend over all pixels of the plurality of pixels in the OLED display or over at least two pixels of the plurality of pixels.

[0213] The hole transport layer (HTL) can be formed on a common HIL by vacuum deposition, spin coating, slot coating, printing, casting, Langmuir-Blodget deposition or similar methods.

[0214] The hole transport layer can be formed as a common hole transport layer.

[0215] When a hole transport layer (HTL) or a common hole transport layer (HTL) is formed by vacuum deposition or spin coating, the deposition and coating conditions may be similar to those used to form a high-level hole transport layer (HIL). However, depending on the compound used to form the hole transport layer (HTL) or the common hole transport layer (HTL), the conditions for vacuum or solution deposition may vary.

[0216] In one embodiment, the organic light-emitting diode further includes a hole transport layer (HTL) or a common hole transport layer (HTL), wherein the hole transport layer (HTL) or the common hole transport layer (HTL) is disposed between the common hole injection layer and at least one emission layer.

[0217] In one embodiment, the hole transport layer (HTL) or common hole transport layer (HTL) comprises a covalent matrix compound or a substantially covalent matrix compound.

[0218] In one embodiment, at least one common hole injection layer and hole transport layer (HTL) or common hole transport layer (HTL) comprises a covalent matrix compound or a substantial covalent matrix compound, wherein the covalent matrix compound or the substantial covalent matrix compound is selected to be the same in both layers.

[0219] The thickness of the HTL can be in the range of about 5 nm to about 250 nm, preferably about 10 nm to about 200 nm, more preferably about 20 nm to about 190 nm, more preferably about 40 nm to about 180 nm, more preferably about 60 nm to about 170 nm, more preferably about 80 nm to about 160 nm, more preferably about 100 nm to about 160 nm, and more preferably about 120 nm to about 140 nm.

[0220] When the thickness of HTL is within this range, HTL can have excellent hole transport characteristics without substantial loss of driving voltage.

[0221] A common hole transport layer (HTL) can be formed for a plurality of OLED pixels in an OLED display. In one embodiment, the common HTL can extend over all pixels in the plurality of pixels in the OLED display or over at least two pixels in the plurality of pixels. Similarly, a cathode can be formed as a common cathode for the plurality of pixels or at least two pixels. The common cathode can extend over all pixels in the plurality of pixels in the OLED display or over at least two pixels in the plurality of pixels. Each individual pixel may have its own anode, which may not contact the anodes of other individual pixels. Furthermore, the active-matrix OLED display has driving circuitry configured to drive the individual pixels of the plurality of pixels provided in the OLED display separately. In one embodiment, the step of driving separately may include separate control of the driving current applied to the individual pixels.

[0222] A common HTL can be made of a hole transport matrix (HTM) material doped with a hole injection material. The hole transport matrix material can be doped with more than one hole injection material. It should be understood that the HTM material is composed of one or more HTM compounds, and the term hole transport material is a broader term used throughout this application for all semiconductor materials including at least one HTM compound. The hole transport matrix material can be composed of one or more organic compounds.

[0223] The HTM may include or consist of compounds having the energy of their highest occupied molecular orbitals, expressed on an absolute scale with a reference vacuum level of zero, calculated in the package program TURBOMOLE V6.5 using the hybrid function B3LYP with a Gaussian 6–31G* basis set in the range of < -4.27 eV to ≥ -6.0 eV, < -4.3 eV to ≥ -5.5 eV, preferably < -4.5 eV to ≥ -5.4 eV, and more preferably from < -4.6 eV to ≥ 5.3 eV.

[0224] The common hole transport layer may have a thickness of less than 50 nm, less than 40 nm, less than 30 nm, less than 20 nm, or less than 15 nm. The common hole transport layer may have a thickness greater than 3 nm, greater than 5 nm, greater than 8 nm, or greater than 10 nm. The anode may be made of a transparent conductive oxide (TCO) (e.g., indium tin oxide (ITO)). Alternatively, the anode may be made of one or more thin metal layers, forming a semi-transparent anode. In another embodiment, the anode may be made of a thick metal layer that is opaque to visible light.

[0225] In one embodiment, the work function of the anode may be less than 500 meV, less than 450 meV, less than 400 meV, less than 350 meV, or less than 300 meV higher than the highest LUMO level of the compound of the hole injection material forming the common hole injection layer, indicated by an absolute scale with reference to the vacuum level of zero.

[0226] Typical examples of known doped hole transport materials are: copper phthalocyanine (CuPc) with a HOMO level of approximately -5.2 eV and doped with tetrafluorotetracyanoquinone dimethyl ether (F4TCNQ) with a LUMO level of approximately -5.2 eV; zinc phthalocyanine (ZnPc) doped with F4TCNQ (HOMO = -5.2 eV); α-NPD (N,N'-bis(naphthyl-1-yl)-N,N'-bis(phenyl)-benzidine) doped with F4TCNQ; and α-NPD doped with 2,2'-(perfluoronaphthyl-2,6-dimethylene)dimalonitrile. The concentration of the hole injection material can be selected from 1 to 20 wt.-%, preferably 3 wt.-% to 10 wt.-%. Electron blocking layer

[0227] The electron blocking layer (EBL) can be formed as a common electron blocking layer (EBL) or as a separating layer that is not a common electron blocking layer (EBL). The EBL can be formed as a common EBL of a plurality of pixels or at least two pixels. The common EBL can extend over all pixels of the plurality of pixels in the OLED display or over at least two pixels of the plurality of pixels. Preferably, each individual pixel can have its own EBL, which may not contact the EBL of other individual pixels.

[0228] The function of the electron blocking layer (EBL) is to prevent electrons from transferring from the luminescent layer to the hole transport layer, thereby confining the electrons within the luminescent layer. The EBL can be in direct contact with both the common HTL and the EML. The electron blocking layer can be an undoped layer made of an organic hole transport matrix material (or in other words, it can be free of hole injection material). The composition of the organic hole transport matrix material of the common hole transport layer can be the same as that of the organic hole transport matrix material of the electron blocking layer. In another embodiment of the invention, the compositions of the two hole transport matrix materials can be different.

[0229] Therefore, efficiency, operating voltage, and / or service life can be improved. Typically, the electron blocking layer comprises a triarylamine compound. The triarylamine compound may have a LUMO level closer to the vacuum level than the LUMO level of the hole transport layer. Each compound forming the electron blocking layer may have a HOMO level expressed on an absolute scale with a reference vacuum level of zero, which is higher than the HOMO level of any compound of the hole transport matrix material forming the common hole transport layer. Compared to the HOMO level of the hole transport layer, the electron blocking layer may have a HOMO level further away from the vacuum level.

[0230] The organic matrix material of the electron blocking layer may have a hole mobility equal to or higher than that of the matrix material of the hole transport layer. The hole transport matrix (HTM) material of the common HTL and / or EBL may be selected from compounds comprising conjugated systems including nonlocalized electrons, wherein the conjugated system comprises at least two lone pairs of tertiary amine nitrogen atoms.

[0231] If the electron blocking layer has a high triplet energy level, it can also be called a triplet control layer. If a green or blue phosphorescent emitting layer is used, the function of the triplet control layer is to reduce triplet quenching. Therefore, higher luminous efficiency from the phosphorescent emitting layer can be achieved. The triplet control layer is selected from triarylamine compounds whose triplet energy level is higher than that of the phosphorescent emitter in the adjacent emitting layer. Suitable compounds (especially triarylamine compounds) for use as triplet control layers are described in EP 2 722 908 A1.

[0232] The thickness of the electron blocking layer can be selected between 2 and 20 nm. The EBL can have a layer thickness greater than 30 nm, greater than 50 nm, greater than 70 nm, greater than 100 nm, or greater than 110 nm. The thickness of the EBL can be less than 200 nm, less than 170 nm, less than 140 nm, or less than 130 nm. Compared to the EBL, the common HTL may be about an order of magnitude thinner.

[0233] The electron blocking layer may include a compound having the energy of its highest occupied molecular orbital, expressed on an absolute scale with reference to the vacuum level of zero, calculated in the TURBOMOLE V6.5 program using the hybrid function B3LYP with a Gaussian 6–31G* basis set in the range of < -4.27 eV to ≥ -6.0 eV, < -4.3 eV to ≥ -5.5 eV, preferably < -4.5 eV to ≥ -5.4 eV, and more preferably < -4.6 eV to ≥ 5.3 eV. Photoactive layer (PAL)

[0234] The photoactive layer converts current into photons or photons into current. The photoactive layer can be formed as a common photoactive layer or as a separate layer that is not a common photoactive layer. The PAL can be formed as a plurality of pixels or a common PAL of at least two pixels. The common PAL can extend over all pixels of the plurality of pixels in the OLED display or over at least two pixels of the plurality of pixels.

[0235] PAL can be formed on HTL by vacuum deposition, spin coating, slot coating, printing, casting, LB deposition, or similar methods. When PAL is formed using vacuum deposition or spin coating, the deposition and coating conditions may be similar to those used to form HIL. However, depending on the compound used to form PAL, the deposition and coating conditions may vary.

[0236] The prerequisite may be that the photoactive layer does not include the organic p-type dopant of this invention. Emissive Layer (EML)

[0237] The EML layer can be formed as a common EML layer or as a separate layer that is not an EML layer. For RGB displays, preferably, the EML is formed as a separate layer that is not an EML layer. The EML can be formed as a common EML of a plurality of pixels or at least two pixels. The common EML can extend over all pixels of the plurality of pixels in an OLED display or over at least two pixels of the plurality of pixels.

[0238] EML can be formed on HTL by vacuum deposition, spin coating, slot coating, printing, casting, LB deposition, or the like. When EML is formed using vacuum deposition or spin coating, the deposition and coating conditions may be similar to those used to form HIL. However, depending on the compound used to form the EML, the deposition and coating conditions may vary.

[0239] The common electron transport layer may include an organic electron transport matrix (ETM) material. Furthermore, the common electron transport layer may include one or more n-type dopants, and suitable compounds for the ETM include aromatic or heteroaromatic structural moieties, as disclosed, for example, in documents EP 1 970 371 A1 or WO 2013 / 079217 A1.

[0240] The premise may be that the light-emitting layer does not include organic p-type dopants for HIL and / or HTL as described in this invention.

[0241] The light-emitting layer (EML) can be formed by combining a host and an emitter dopant. Examples of hosts are Alq3, 4,4'-N,N'-dicarbazole-biphenyl (CBP), poly(n-vinylcarbazole) (PVK), 9,10-bis(naphthyl-2-yl)anthracene (ADN), 4,4',4''-tris(carbazole-9-yl)-triphenylamine (TCTA), 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI), 3-tri-tert-butyl-9,10-bis-2-naphthylanthracene (TBADN), stilbene aryl (DSA), and bis(2-(2-hydroxyphenyl)benzothiazolyl)zinc (Zn(BTZ)2).

[0242] The emitter dopant can be a phosphorescent or fluorescent emitter. Phosphorescent emitters and emitters that emit light via thermally activated delayed fluorescence (TADF) are preferred due to their higher efficiency. The emitter can be a small molecule or a polymer.

[0243] Examples of red emitter dopants include PtOEP, Ir(piq)3, and Btp2lr(acac), but are not limited thereto. These compounds are phosphorescent emitters; however, fluorescent red emitter dopants may also be used.

[0244] Examples of phosphorescent green emitter dopants are Ir(ppy)3 (ppy = phenylpyridine), Ir(ppy)2(acac), and Ir(mpyp)3.

[0245] Examples of phosphorescent blue emitter dopants are F₂Irpic, (F₂ppy)₂Ir(tmd), Ir(dfppz)₃, and trifurfen. 4,4'-bis(4-diphenylaminostyryl)biphenyl (DPAVBi) and 2,5,8,11-tetra-tert-butylperylene (TBPe) are examples of fluorescent blue emitter dopants.

[0246] Based on 100 parts by weight of the host, the amount of emitter dopant can range from about 0.01 to about 50 parts by weight. Alternatively, the emitter layer can be composed of a light-emitting polymer. The EML can have a thickness of about 10 nm to about 100 nm, for example, about 20 nm to about 60 nm. When the thickness of the EML is within this range, the EML can exhibit excellent light emission without substantial loss of driving voltage. Hole blocking layer (HBL)

[0247] The hole blocking layer (HBL) may be formed as a common hole blocking layer (HBL) or as a separate hole blocking layer (HBL) that is not a common hole blocking layer (HBL). The HBL may be formed as a common HBL of a plurality of pixels or at least two pixels. The common HBL may extend over all pixels of the plurality of pixels in the OLED display or over at least two pixels of the plurality of pixels.

[0248] The hole blocking layer (HBL) can be formed on the EML by vacuum deposition, spin coating, slot coating, printing, casting, LB deposition or similar methods to prevent holes from diffusing into the ETL. When the EML includes phosphorescent dopant, the HBL can also have triplet exciton blocking function.

[0249] HBL can also be called auxiliary ETL or a-ETL.

[0250] When HBL is formed using vacuum deposition or spin coating, the deposition and coating conditions can be similar to those used to form HIL. However, depending on the compound used to form HBL, the deposition and coating conditions may vary. Any compound commonly used to form HBL can be used. Examples of compounds used to form HBL include acediazole derivatives, triazole derivatives, phenobarbital derivatives, and triazine derivatives.

[0251] The HBL can have a thickness of about 5 nm to about 100 nm, for example, about 10 nm to about 30 nm. When the thickness of the HBL is within this range, the HBL can have excellent hole-blocking performance without substantial loss of driving voltage. Electron Transport Layer (ETL)

[0252] The electron transport layer (ETL) can be formed as a common electron transport layer (ETL) or as a separate electron transport layer (ETL) that is not a common electron transport layer (ETL).

[0253] An ETL can be formed as a common ETL of a plurality of pixels or at least two pixels. A common ETL can extend over all pixels of a plurality of pixels in an OLED display or over at least two pixels of a plurality of pixels.

[0254] Each individual pixel may have its own ETL, which may not access the ETL of other individual pixels.

[0255] The organic light-emitting diode according to the present invention may further include an electron transport layer (ETL).

[0256] According to another embodiment, the electron transport layer may further include an azazine compound, preferably a triazine compound.

[0257] In one embodiment, the electron transport layer may further include a dopant selected from basic organic complexes (preferably LiQ).

[0258] The thickness of the ETL can be in the range of about 15 nm to about 50 nm, for example, about 20 nm to about 40 nm. When the thickness of the ETL is in this range, the ETL can have satisfactory electron injection characteristics without substantial loss of driving voltage.

[0259] According to another embodiment, the organic light-emitting diode may further include a hole-blocking layer and an electron transport layer, wherein the hole-blocking layer and the electron transport layer include an azine compound. Preferably, the azine compound is a triazine compound. Electron injection layer (EIL)

[0260] EIL can be formed as a common EIL layer or as a separate EIL layer that is not a common EIL layer.

[0261] The EIL can be formed as a common EIL of a plurality of pixels or at least two pixels. The common EIL can extend over all pixels of the plurality of pixels in the OLED display or over at least two pixels of the plurality of pixels.

[0262] An optional EIL that facilitates electron injection from the cathode may be formed on the ETL, preferably directly on the electron transport layer. Examples of materials used to form the EIL include lithium 8-hydroxyquinoline (LiQ), LiF, NaCl, CsF, Li₂O, BaO, Ca, Ba, Yb, and Mg, which are known in the art. The deposition and coating conditions for forming the EIL are similar to those for forming the HIL, although the deposition and coating conditions may vary depending on the material used to form the EIL.

[0263] The thickness of the EIL can be in the range of about 0.1 nm to about 10 nm, for example, about 0.5 nm to about 9 nm. When the thickness of the EIL is within this range, the EIL can have satisfactory electron injection characteristics without substantial loss of driving voltage. Cathode electrode

[0264] The cathode electrode may be formed as a common cathode electrode layer or as a separate cathode electrode layer that is not a common cathode electrode layer.

[0265] The cathode may be formed as a common cathode of a plurality of pixels or at least two pixels. The common cathode may extend over all pixels of the plurality of pixels in the OLED display or over at least two pixels of the plurality of pixels.

[0266] The cathode electrode (also known as the cathode layer) is formed on the ETL or optional EIL.

[0267] The cathode can be made of a metal or metal alloy having a low work function. Transparent cathodes made of TCO are also well known in the art. Preferably, the cathode electrode can be formed of a metal, alloy, conductive compound, or mixture thereof. The cathode electrode can have a low work function. For example, the cathode electrode can be formed of lithium (Li), magnesium (Mg), aluminum (Al), aluminum (Al)-lithium (Li), calcium (Ca), barium (Ba), ytterbium (Yb), magnesium (Mg)-indium (In), magnesium (Mg)-silver (Ag), or the like. Alternatively, the cathode electrode can be formed of a transparent conductive oxide (preferably ITO or IZO).

[0268] The thickness of the cathode electrode can be in the range of about 5 nm to about 1000 nm, for example, in the range of about 10 nm to about 100 nm. When the thickness of the cathode electrode is in the range of about 5 nm to about 50 nm, even if it is formed of metal or metal alloy, the cathode electrode can be transparent or translucent.

[0269] It should be understood that the cathode electrode is not part of the electron injection layer or the electron transport layer. Organic layer stacking

[0270] The organic layer stack may be made of an organic compound with a molecular weight of less than 2000 g / mol. In an alternative embodiment, the organic compound may have a molecular weight of less than 1000 g / mol.

[0271] It may be that at least two common semiconductor layers of HIL and HTL extend over all pixels of a plurality of pixels in an OLED display or over at least two pixels of a plurality of pixels.

[0272] According to one embodiment, the HIL and HTL of the organic layer stack extend over all pixels of a plurality of pixels in an OLED display or over at least two pixels of a plurality of pixels.

[0273] According to one embodiment, the organic layer stacks HIL, HTL and HBL are formed as a common semiconductor layer and extend over all pixels of a plurality of pixels in an OLED display or over at least two pixels of a plurality of pixels.

[0274] According to one embodiment, the organic layer stack HIL, HTL and EBL are formed as a common semiconductor layer and extend over all pixels of a plurality of pixels in an OLED display or over at least two pixels of a plurality of pixels.

[0275] According to one embodiment, the organic layer stacks HIL, HTL, EBL, and ETL are formed as a common semiconductor layer and extend over all pixels of a plurality of pixels in an OLED display or over at least two pixels of a plurality of pixels.

[0276] According to one embodiment, the HIL, HTL, and n-type side of the organic layer stack are formed as a common semiconductor layer and extend over all pixels of a plurality of pixels in an OLED display or over at least two pixels of a plurality of pixels.

[0277] According to one embodiment, the organic layer stack HIL, HTL, HBL, and n-type side are formed as a common semiconductor layer and extend over all pixels of a plurality of pixels in an OLED display or over at least two pixels of a plurality of pixels.

[0278] According to one embodiment, the HIL, HTL, EBL and n-type side of the organic layer stack are formed as a common semiconductor layer and extend over all pixels of a plurality of pixels in an OLED display or over at least two pixels of a plurality of pixels.

[0279] According to one embodiment, the HIL, HTL, EBL, ETL and n-type side of the organic layer stack are formed as a common semiconductor layer and extend over all pixels of a plurality of pixels in an OLED display or over at least two pixels of a plurality of pixels.

[0280] Preferably, each individual pixel may have its own ETL, which may not touch the ETL of other individual pixels.

[0281] Preferably, each individual pixel may have its own EML or PAL, which may not contact the EML or PAL of other individual pixels.

[0282] Preferably, each individual pixel may have its own EBL, which may not contact the EBL of other individual pixels.

[0283] Preferably, each individual pixel may have its own HBL, which may not contact the HBL of other individual pixels.

[0284] Preferably, each individual pixel may have its own n-type side, which may not contact the n-type sides of other individual pixels. Manufacturing method

[0285] Another aspect relates to a method for manufacturing at least one common layer.

[0286] A method for manufacturing at least one common layer includes, wherein the method for manufacturing at least one common layer includes depositing each common layer over the entire display area via a large mask opening in a process step.

[0287] In the following description, embodiments will be illustrated in more detail with reference to examples. However, this disclosure is not limited to the following examples. Exemplary examples will now be referred to in detail.

Implementation Method

[0289] The present invention is further illustrated by the following examples, which are merely illustrative and not binding.

[0290] The compound can be prepared as described in the literature, or alternative compounds can be prepared as similar compounds described in the literature. Calculated HOMO and LUMO.

[0291] The HOMO and LUMO energy levels were calculated using the suite program TURBOMOLE V6.5 (TURBOMOLE GmbH, Litzenhardtstrasse 19, 76135 Karlsruhe, Germany). The optimal geometry of the molecular structure and the HOMO and LUMO energy levels were determined by applying a mixed-function B3LYP with a 6–31 G* basis set in the gas phase. If more than one configuration was feasible, the configuration with the lowest total energy was selected. The HOMO and LUMO energy levels are recorded in electron volts (eV). The transmission line method is described in more detail.

[0292] According to the present invention, the transmission line method for measuring the sheet resistance of a first common semiconductor layer comprising an organic p-type dopant and a second common semiconductor layer on the first common semiconductor can be performed as follows. Substrate and sample preparation.

[0293] According to Figure 4, an ITO-coated substrate with 90 nm ITO and a sheet resistance of 10 Ohm / sq is patterned using an interdigitated structure. Twelve ITO fingers on the two electrodes form a total of 23 conductive regions: n=23. The interdigitation length we is 4.5 mm. Therefore, the total channel width is 103.5 mm. The channel length w varies in 20 µm steps between 20 and 80 µm. Electrode pairs with four different channel lengths are combined on a substrate with dimensions of 25 x 25 mm², as shown in Figure 5. An organic layer is deposited on the substrate, covering the complete interdigitated pattern. On the substrate, a first common semiconductor layer comprises at least one organic p-type dopant with a thickness of 10 nm. For example, the first common semiconductor layer is a hole injection layer composed of a doped covalent matrix compound, the suitable covalent matrix compound described in the specification being deposited by co-evaporation. The temperature range depends on the material and is limited by the vaporization temperature at the start of vaporization and the decomposition temperature. These values ​​are material parameters and vary for each material. They typically range from 50 °C to 500 °C, with most falling between 150 °C and 350 °C. For example, covalent matrix compound deposition is performed at a fixed rate of 1 Å / s and a evaporation source temperature of 272 °C. Organic p-type dopant sources are selected, for example, from the group consisting of substituted or unsubstituted 3-axylenes, substituted or unsubstituted quinones, substituted or unsubstituted quinones, and substituted or unsubstituted aromatic compounds including condensation rings, and more preferably, organic p-type dopant may be selected from substituted or unsubstituted 3-axylene compounds. Other suitable p-type dopants are described in the specification, for example, operating at 0.068 Å / s at 174 °C. On this layer, a second common semiconductor layer with a thickness of 128 nm is deposited at a deposition rate of 2 Å / s and a temperature of 280 °C, which is, for example, a common hole transport layer or a common electron blocking layer, wherein a hole transport layer is preferred. Throughout the deposition process, the chamber pressure was 3e-7 mbar. However, as mentioned above, the deposition temperature used depends on the vaporization temperature at the onset of vaporization and the decomposition temperature. The deposition temperature for organic materials depends on the material and is typically between 50°C and 500°C. After the organic layer was deposited, the resulting substrate device was encapsulated in a nitrogen-filled glove box with a glass lid containing an integrated desiccant to prevent sample degradation.

[0294] According to the present invention, the transmission line method for measuring the sheet resistance of a common first semiconductor layer comprising an organic p-type dopant, a common second semiconductor layer on the common first semiconductor layer, and a common third semiconductor layer on the common second semiconductor layer can be performed as described below.

[0295] According to Figure 4, an ITO-coated substrate with 90 nm ITO and a sheet resistance of 10 Ohm / sq is patterned using a forked structure. Twelve ITO fingers on the two electrodes form a total of 23 conductive regions: n=23. The fork length we is 4.5 mm. Therefore, the total channel width is 103.5 mm. The channel length w varies in 20 µm steps between 20 and 80 µm. Electrode pairs with four different channel lengths are combined on a substrate with a size of 25 x 25 mm², as shown in Figure 5. An organic layer is deposited on the substrate, covering the complete forked pattern. On the substrate, a first common semiconductor layer comprises at least one organic p-type dopant with a thickness of 10 nm. For example, the first common semiconductor layer is a hole injection layer composed of a doped covalent matrix compound, the suitable covalent matrix compound described in the specification being deposited by co-evaporation. The temperature range depends on the material and is limited by the vaporization temperature at the start of vaporization and the decomposition temperature. These values ​​are material parameters and are different for each material. These values ​​are typically between 50 °C and 500 °C, with most falling between 150 °C and 350 °C. For example, covalent matrix compound deposition is performed at a fixed rate of 1 Å / s and a evaporation source temperature of 272 °C. Organic p-type dopant sources are selected, for example, from the group consisting of substituted or unsubstituted 3-axylenes, substituted or unsubstituted quinones, substituted or unsubstituted quinones, and substituted or unsubstituted aromatic compounds including condensation rings, and more preferably, organic p-type dopant may be selected from substituted or unsubstituted 3-axylene compounds. Other suitable p-type dopants are described in the specification, for example, operating at 0.068 Å / s at 174 °C. On this layer, a second common semiconductor layer with a thickness of 128 nm is deposited at a deposition rate of 2 Å / s and a temperature of 280 °C, which is, for example, a common hole transport layer or a common electron blocking layer, wherein a hole transport layer is preferred. On this layer, a third common semiconductor layer with a thickness of 5 nm, such as a common electron blocking layer, is deposited at a deposition rate of 1 Å / s and a temperature of 244°C. The chamber pressure is 3e-7 mbar throughout the deposition process. However, as mentioned above, the evaporation temperature used depends on the vaporization temperature at the start of vaporization and the decomposition temperature. The evaporation temperature for organic materials depends on the material and is typically between 50°C and 500°C. After the organic layer deposition, the resulting substrate device is encapsulated in a nitrogen-filled glove box with a glass lid containing an integrated desiccant to prevent sample degradation.

[0296] According to the present invention, the transmission line method for measuring the sheet resistance of a common first semiconductor layer comprising an organic p-type dopant, a common second semiconductor layer on the common first semiconductor layer, a common third semiconductor layer on the common second semiconductor layer, and a common light-emitting layer (EML) on the common third semiconductor layer can be performed as described below.

[0297] According to Figure 4, an ITO coated substrate with 90 nm ITO and a sheet resistance of 10 Ohm / sq is patterned using a finger structure. Twelve ITO finger structures on the two electrodes form a total of 23 conductive regions: n=23. The finger length we is 4.5 mm. Therefore, the total channel width is 103.5 mm. The channel length w varies between 20 and 80 µm in 20 µm steps. Electrode pairs with four different channel lengths are combined on a substrate with dimensions of 25 x 25 mm², as shown in Figure 5. An organic layer is deposited on the substrate, covering the complete finger pattern. On the substrate, a first common semiconductor layer comprises at least one organic p-type dopant with a thickness of 10 nm. For example, the first common semiconductor layer is a hole injection layer composed of a doped covalent matrix compound, the suitable covalent matrix compound described in the specification being deposited by co-evaporation. The temperature range depends on the material and is limited by the vaporization temperature at the start of vaporization and the decomposition temperature. These values ​​are material parameters and vary for each material. They typically range from 50 °C to 500 °C, with most falling between 150 °C and 350 °C. For example, covalent matrix compound deposition is performed at a fixed rate of 1 Å / s (angstroms per second) with a deposition source temperature of 272 °C. Organic p-type dopant sources are selected, for example, from the group consisting of substituted or unsubstituted 3-axylenes, substituted or unsubstituted quinones, substituted or unsubstituted quinones, and substituted or unsubstituted aromatic compounds including condensation rings, and more preferably, organic p-type dopant may be selected from substituted or unsubstituted 3-axylene compounds. Other suitable p-type dopants are described in the specification, for example, operating at 0.068 Å / s at 174 °C. On this layer, a second common semiconductor layer with a thickness of 128 nm is deposited at a deposition rate of 2 Å / s at a temperature of 280 °C, which is, for example, a common hole transport layer or a common electron blocking layer, preferably a hole transport layer. On this layer, a third common semiconductor layer with a thickness of 5 nm, such as a common electron blocking layer, is deposited at a deposition rate of 1 Å / s at a temperature of 244°C. On this layer, a host compound is deposited at a deposition rate of 1 Å / s at a temperature of 183°C, and an emitter dopant is deposited at a deposition rate of 0.03 Å / s at a temperature of 197°C, while an emitter layer with a thickness of 20 nm, such as a blue emitter layer, is deposited. Throughout the deposition process, the chamber pressure is 3e-7 mbar. However, as mentioned above, the evaporation temperature used depends on the vaporization temperature at the start of vaporization and the decomposition temperature. The evaporation temperature for organic materials depends on the material and is typically between 50°C and 500°C. After the organic layer deposition, the resulting substrate device is encapsulated in a nitrogen-filled glove box using a glass cover with an integrated desiccant to prevent sample degradation. General procedures for manufacturing OLEDs.

[0298] For Examples 1 to 18 and Comparative Example 1, a glass substrate having an anode layer (the anode layer comprising a first anode sublayer of 120 nm Ag, a second anode sublayer of 8 nm ITO, and a third anode sublayer of 10 nm ITO) was cut to a size of 50 mm × 50 mm × 0.7 mm, ultrasonically cleaned with water for 60 minutes, and then ultrasonically cleaned with isopropanol for 20 minutes.

[0299] Then, a substantial covalent matrix compound and a hole injection material are co-deposited on the anolyte layer in a vacuum to form a hole injection layer (HIL). Next, the substantial covalent matrix compound is vacuum-deposited on the HIL to form an HTL with a thickness of 128 nm. The molecular formula of the substantial covalent matrix compound in the HTL is the same as that of the substantial covalent matrix compound used in the HIL.

[0300] Then, vacuum deposition was performed on HTL to form an electron blocking layer (EBL) with a thickness of 5 nm.

[0301] Next, 97 vol.-% H09 (Sun Fine Chemicals, Korea) as the EML body and 3 vol.-% BD200 (Sun Fine Chemicals, Korea) as the fluorescent blue emitter dopant were deposited on the EBL to form a first emission layer (EML) with a thickness of 20 nm that emits blue light.

[0302] Next, a hole blocking layer with a thickness of 5 nm is formed by depositing 2-(3'-(9,9-dimethyl-9H-furo-2-yl)-[1,1'-biphenyl]-3-yl)-4,6-diphenyl-1,3,5-triazine on the emission layer (EML).

[0303] Then, an electron transport layer with a thickness of 31 nm is formed by depositing 50 wt.-% of 4'-(4-(4-(4,6-biphenyl-1,3,5-triazine-2-yl)phenyl)naphth-1-yl)-[1,1'-biphenyl]-4-carboxynitrile and 50 wt.-% of LiQ on the hole blocking layer.

[0304] Then, an electron injection layer with a thickness of 2 nm is formed on the electron transport layer by depositing ytterbium at a rate of 0.01 to 1 Å / s at 10-7 mbar.

[0305] Next, Ag:Mg (90:10 vol.-%) was evaporated at a rate of 0.01 to 1 Å / s at 10-7 mbar to form a cathode layer with a thickness of 100 nm on the electron injection layer.

[0306] The OLED stack is protected from environmental conditions by using a device encapsulation with a glass slide. Therefore, a cavity is formed, which includes a getter material for further protection.

[0307] To evaluate the performance of the present invention compared to the prior art, current efficiency was measured at 20°C. The current-voltage characteristics were determined using a Keithley 2635 power measurement unit by providing an operating voltage U in V and measuring the current flowing through the device under test (in mA). The voltage applied to the device varied between 0V and 10V in 0.1V steps. Similarly, the luminance-voltage characteristics and CIE coordinates were determined by measuring the luminance (in cd / m²) at each voltage value using an Instrument Systems CAS-140CT array spectrometer (calibrated by Deutsche Akkreditierungsstelle (DAkkS)).

[0308] The lifespan LT of the device was measured using a Keithley 2400 sourcemeter under ambient conditions (20°C) and 30 mA / cm², and recorded in hours. The brightness of the device was measured using a calibrated photodiode. The lifespan LT was defined as the time before the brightness of the device decreased to 97% of its initial value.

[0309] To determine the voltage stability U over time (10h-1h), a current density of 30 mA / cm² was applied to the device. The operating voltage U was measured after 1 hour and after 50 hours, and then the voltage stability over the period from 1 hour to 50 hours was calculated.

[0310] Table 2 shows the preferred HTL matrix materials, some of which are used in Table 4. Table 2: HTL Matrix Materials F3 F2 F9 F4 F21 F19 F5 F18 F11 F6 F1 F20

[0311] Table 3 shows the preferred EBL matrix materials, some of which are used in Table 4. Table 3: EBL Matrix Materials F22 F23 F24 F25 Table 4 HIL structure HIL (p-type dopant concentration [wt%]) HIL (main body) HIL thickness [nm] HTL EBL Rs [GΩ / s] of HIL + HTL** HIL, HTL, and EBL's Rs [GΩ / s]** Rs of HIL, HTL, EBL, and EML [GΩ / s]** 15 mA / cm Voltage [V] EQE at 15 mA / cm [%] LT97 with 15 mA / cm Comparison Examples 1 H1 100 wt% --- 10 F3 F22 2 2 2 3.99 13.6 100 Invention Examples 1 H2 2.9 wt% F9 10 F9 F23 958 952 949 3.84 12.4 224 Invention Examples 2 H2 2 wt% F5 10 F5 F22 386 383 380 3.70 13.8 129 Invention Examples 3 H3 1.9 wt% F9 10 F9 F23 5481 5474 5470 3.85 12.6 182 Invention Examples 4 H3 1.8 wt% F5 10 F5 F22 96 96 96 3.68 13.8 134 Invention Examples 5 H4 10 wt% F19 10 F19 F22 319 316 314 3.82 13.8 45 Invention Examples 6 H5 10.6 wt% F3 10 F3 F22 298474 296470 295477 3.85 14.7 292 Invention Examples 7 H5 100 wt% --- 2 F3 F22 25981 25731 25619 3.89 15.0 81 Invention Examples 8 H6 100 wt% --- 5.1 F3 F22 158 157 156 3.89 14.0 88 Invention Examples 9 H7 1.69 wt% F18 10 F18 F24 556 555 553 3.61 19.8 74 Invention Examples 10 H7 8.19 F9 10 F9 F24 236 234 232 3.68 17.8 76 Invention Examples 11 H8 5 wt% F11 11 F11 F24 257 255 254 3.72 13.0 217 Invention Examples 12 H8 9.7 wt% F5 10 F6 F24 555 553 549 3.88 12.8 81 Invention Examples 13 H9 11.8 wt% F3 10 F3 F25 285 285 284 3.82 14.3 104 Invention Examples 14 H9 100 wt% -- 0.5 F3 F25 62 62 62 3.90 13.1 64 Invention Examples 15 H10 100 wt% ---- 0.6 F3 F22 138 138 137 3.83 14.5 --- Invention Examples 16 H11 100 wt% --- 1 F3 F22 204 204 202 3.83 13.5 83 Invention Examples 17 H11 100 wt% --- 2 F18 F22 405 404 401 3.82 14.3 80 Invention Examples 18 H12 20.8 wt.-% F3 12 F3 F22 570 565 562 3.88 13.6 92 Technical effects of the present invention

[0312] As can be seen in Figure 4, the device has a beneficial operating voltage due to its low operating voltage and high chip resistance, which can be as high as 50 gigahertz per square ohms. In addition, besides the operating voltage, the EQE and / or service life are also improved.

[0313] The specific combinations of elements and features in the detailed embodiments described above are merely exemplary; these teachings are also clearly considered in conjunction with other teachings herein and with reference to incorporated patents / applications. As will be recognized by those skilled in the art, variations, modifications, and other implementations of the content described herein can be conceived without departing from the spirit and scope of the claimed invention. Therefore, the foregoing description is by way of example only and is not intended to be limiting. In the claims, the word "comprising" does not exclude other elements or steps, and the indefinite articles "a" or "an" do not exclude plural. The fact that certain measures are enumerated in mutually different subsidiary claims does not imply that combinations of these measures cannot be used advantageously. The scope of the invention is defined by the following claims and their equivalents. Furthermore, the reference numerals used in the specification and claims do not limit the scope of the claimed invention. [Simplified Explanation of the Diagram]

[0288] The foregoing elements, as well as the claimed elements and the element components used according to the invention in the described embodiments, have no particular exceptions in terms of their size, shape, material selection, and technical concept, allowing for the unrestricted application of selection criteria known in the relevant art. Additional details, features, and advantages of the object of the invention are disclosed in the following description of the appendices and corresponding drawings, which illustrate preferred embodiments of the invention in an exemplary manner. However, any embodiment does not necessarily represent the full scope of the invention, and therefore reference is made to the claims and this document to define the scope of the invention. It should be understood that the foregoing general description and the following detailed description are merely exemplary and illustrative, and are intended to provide further explanation of the claims. Figures 1 to 9. Figure 1 is a schematic cross-sectional view of a display having two pixels and a common HIL, common HTL, and common cathode layer; Figure 2 is a schematic cross-sectional view of a test element; Figure 3 is a schematic cross-sectional view of a stacked deposition layer; Figure 4 is a schematic cross-sectional view of a test element; Figure 5 shows a substrate coated with ITO; Figure 6 is a current-voltage measurement graph; Figure 7 is an example diagram of resistance; Figure 8 is a schematic cross-sectional view of an organic light-emitting diode; Figure 9 is a schematic cross-sectional view of an organic light-emitting diode. Figures 1 to 4 will be described in more detail below with reference to examples. However, this disclosure is not limited to the following figures. Here, when the first element is referred to as being formed or disposed "on" or "above" the second element, the first element may be directly disposed on the second element, or one or more other elements may be disposed therebetween. When the first element is referred to as being "directly" formed or disposed "on" or "above" the second element, no other elements are disposed therebetween. Figure 1 is a schematic cross-sectional view of a display having two pixels (100; 200) according to an exemplary embodiment. A first pixel (100) includes an anode layer (120), and a second pixel includes an anode layer (120). The first pixel (100) has its own anode layer (120), and the second pixel (200) has its own anode (120), wherein the anode (120) of the first pixel (100) does not contact the anode layer (120) of any other second pixel (200). A pixel definition layer (125) may be disposed between the anode (120) of the first pixel (100) and the anode (120) of the second pixel (200). A common hole injection layer (HIL) (130) is disposed on the anode layer (120) extending from the first pixel (100) to the second pixel (200). A common hole transport layer (HTL) (140) is disposed above the common HIL (130) and extends from the first pixel (100) to the second pixel (200).An electron blocking layer (EBL) (145) is disposed above a hole transport layer (HTL) (140), such that a first pixel (100) has its own electron blocking layer (EBL) (145), and a second pixel (200) has its own electron blocking layer (EBL) (145), wherein the electron blocking layer (EBL) (145) of the first pixel (100) can contact the electron blocking layer (EBL) (145) of other second pixels (200). An emissive layer (EML) (150) is disposed above an electron blocking layer (EBL) (145), such that a first pixel (100) has its own emissive layer (EML) (150), and a second pixel (200) has its own emissive layer (EML) (150), wherein the emissive layer (EML) (150) of the first pixel (100) can contact the emissive layer (EML) (150) of other second pixels (200). An electron transport layer (ETL) (160) is disposed on top of an emissive light layer (EML) (150), such that the first pixel (100) has its own electron transport layer (ETL) (160), and the second pixel (200) also has its own electron transport layer (ETL) (160). A common cathode layer (190) is disposed on top of the electron transport layer (ETL) (160) and extends from the first pixel (100) to the second pixel (200). Between the first pixel (100) and the second pixel (200), a separator (300) is provided, which does not have an anode layer (120), but a pixel definition layer (125) is used as a sheet resistor layer that is not an anode (120). As can be seen in FIG1, the separator (300) includes at least one layer, which is a common hole injection layer (HIL) (130) and extends from the pixel (100) through the separator (300) to the pixel (200) as a common layer. The separator (300) comprises at least two layers, namely an electron blocking layer (EBL) (145) and a light emitting layer (EML) (150), each extending from the pixel (100) and the pixel (200) to the separator (300). The electron transport layer (ETL) (160) and the hole transport layer (HTL) (140) of the separator (300) do not extend into the pixel (100) and the pixel (200). Figure 1 is only an example, and the invention is not limited to this embodiment. There may be a configuration of multiple layers, one of which may extend from a pixel into the separator (300) or not. Furthermore, the material composition of each non-common layer of the multiple pixels and the separator (e.g., pixels (100), (200) and the separator (300)) may be individually selected to be different or the same. Figure 2 shows a test element comprising two highly conductive electrodes with a gap "I" between them, and each highly conductive electrode having a width "w". Figure 3 shows a schematic diagram of the deposition layer stack on a test element assembly used to determine chip resistance. Each test element consists of a channel (test element).A deposition layer (300) is located on top of the electrodes. Figure 4 shows a test element comprising two highly conductive electrodes with a forked pattern, the gap between the electrode fingers being "l", and the total width "w" being the product of the forked width "we" and the number of forked regions. Figure 5 shows an ITO-coated substrate with 90 nm ITO and a sheet resistance of 10 Ohm / sq, the pattern of which combines electrode pairs with four different channel lengths on a 25x25 mm² substrate. Figure 6 shows an example diagram of current-voltage measurements on the substrate shown in Figure 5. Figure 7 shows an example diagram of resistance obtained from the current-voltage measurements shown in Figure 6, plotted along the corresponding channel length and its slope calculated. Figure 8 is a schematic cross-sectional view of an organic light-emitting diode (OLED) 100 according to an exemplary embodiment of the present invention. OLED 100 includes a substrate (110), an anode layer (120) including a first anode sublayer (121) and a second anode sublayer (122), a semiconductor layer (130) including a compound of formula (1), a hole transport layer (HTL) (140), an electron blocking layer (EBL) (145), an emission layer (EML) (150), a hole blocking layer (EBL) (155), an electron transport layer (ETL) (160), and a cathode layer (190). These layers are arranged exactly in the order mentioned above. FIG9 is a schematic cross-sectional view of an organic light-emitting diode (OLED) 100 according to an exemplary embodiment of the present invention. OLED 100 includes a substrate (110), an anode layer (120) including a first anode sublayer (121), a second anode sublayer (122), and a third anode sublayer (123), a semiconductor layer (130) including a compound of formula (1), a hole transport layer (HTL) (140), an electron blocking layer (EBL) (145), an emitter layer (EML) (150), a hole blocking layer (EBL) (155), an electron transport layer (ETL) (160), and a cathode layer (190). These layers are arranged exactly in the order mentioned above. In the following, specific embodiments will be described in more detail with reference to examples. However, this disclosure is not limited to the following examples.

Claims

1. An active-matrix OLED display comprising a plurality of OLED pixels, wherein each pixel itself comprises an organic layer stack, and each layer of the organic layer stack can form a common semiconductor layer, wherein, - At least one first OLED pixel and one second OLED pixel, comprising: - an anode layer; - a common cathode layer; - at least one emitter layer; - at least one organic layer stack disposed between the anode layer and the common cathode layer, comprising: - a plurality of semiconductor layers, wherein the plurality of semiconductor layers comprises at least two or more common semiconductor layers, wherein the plurality of semiconductor layers comprises: - at least one first common semiconductor layer comprising at least one organic p-type dopant; - at least one second common semiconductor layer; - the common semiconductor layer extending over all pixels of the plurality of pixels in the OLED display or over at least two pixels of the plurality of pixels; - an electron blocking layer, wherein each other pixel has its own electron blocking layer; - wherein the electron blocking layer has a thickness greater than 0 nm and less than 200 nm; - wherein the first common semiconductor layer is a common hole injection layer and the second common semiconductor layer is a common hole transport layer; The common hole injection layer is in direct contact with the second common semiconductor layer; and the first common semiconductor layer and the second common semiconductor layer together have a sheet resistance of ≥50 gigahertz per square ohm.

2. The active-matrix OLED display as claimed in claim 1, wherein the at least one emitting layer is a common emitting layer.

3. The active-matrix OLED display as claimed in claim 1, wherein the organic p-type dopant is selected from the group consisting of: a substituted or unsubstituted 3-axylene, a substituted or unsubstituted quinone, a substituted or unsubstituted quinone, and a substituted or unsubstituted aromatic compound comprising a condensation ring.

4. The active-matrix OLED display as claimed in claim 3, wherein the 3-axylene is represented by formula (1): (1) wherein A1, A2 and A3 are independently selected from formula (2): (2), wherein "" is a single bond position of the double bond in formula (1) from A1, A2 and A3, and R' is independently selected from the group consisting of substituted or unsubstituted aryl, substituted or unsubstituted heteroaryl, and substituted or unsubstituted alkyl; wherein the substituent on R' is independently selected from the group consisting of an electron-withdrawing group, D and H; R'' is selected from the group consisting of an electron-withdrawing group, substituted or unsubstituted alkyl, substituted or unsubstituted heteroaryl, and substituted or unsubstituted aryl; wherein the substituent on R'' is independently selected from the group consisting of an electron-withdrawing group, D and H; wherein R' and R'' together form a substituted or unsubstituted carbocyclic ring or a substituted or unsubstituted heterocyclic ring; The substituent is independently selected from the group consisting of: an electron-withdrawing group, a substituted or unsubstituted C6 to C18 aryl group, a substituted or unsubstituted C2 to C18 heteroaryl group, a substituted or unsubstituted C3 to C18 carbocyclic ring, a substituted or unsubstituted C3 to C18 carbocyclic ring, a substituted or unsubstituted C1 to C8 carboalkyl group, and a substituted or unsubstituted C1 to C8 alkylene group; wherein the substituent is independently an electron-withdrawing group.

5. The active-matrix OLED display as claimed in claim 4, wherein the substituted or unsubstituted aryl group is a substituted or unsubstituted C6 to C24 aryl group, the substituted or unsubstituted heteroaryl group is a substituted or unsubstituted C2 to C20 heteroaryl group, and the substituted or unsubstituted alkyl group is a substituted or unsubstituted C1 to C8 alkyl group.

6. The active-matrix OLED display as claimed in claim 4, wherein the substituent on R' is an electron-withdrawing group independently selected from the group consisting of: CN, halogens, partially fluorinated or perfluorinated alkyl groups, and partially fluorinated or perfluorinated alkoxy groups.

7. The active-matrix OLED display as claimed in claim 6, wherein the halogen is Cl or F, the partially fluorinated or perfluorinated alkyl group is a partially fluorinated or perfluorinated C1 to C10 alkyl group, and the partially fluorinated or perfluorinated alkoxy group is a partially fluorinated or perfluorinated C1 to C6 alkoxy group.

8. The active-matrix OLED display as claimed in claim 4, wherein R'' is an electron-withdrawing group independently selected from the group consisting of CN, perfluorinated alkyl, NO2, and F, wherein the substituted or unsubstituted alkyl is a substituted or unsubstituted C1 to C8 alkyl, the substituted or unsubstituted heteroaryl is a substituted or unsubstituted C2 to C20 heteroaryl, and the substituted or unsubstituted aryl is a substituted or unsubstituted C6 to C24 aryl.

9. The active-matrix OLED display as claimed in claim 4, wherein the substituent on R'' is an electron-withdrawing group independently selected from the group consisting of: CN, halogens, partially fluorinated or perfluorinated alkyl groups, and partially fluorinated or perfluorinated alkoxy groups.

10. The active-matrix OLED display of claim 9, wherein the halogen is Cl or F, the partially fluorinated or perfluorinated alkyl group is a partially fluorinated or perfluorinated C1 to C10 alkyl group, and the partially fluorinated or perfluorinated alkoxy group is a partially fluorinated or perfluorinated C1 to C6 alkoxy group.

11. The active-matrix OLED display as claimed in claim 4, wherein the substituent on the substituted carbide ring or substituted or unsubstituted heterocycle formed by R' and R'' together is an electron-withdrawing group independently selected from F, CN, or perfluorinated C1 to C8 alkyl groups.

12. The active-matrix OLED display as claimed in claim 4, wherein the substituent on the substituent of the substituted carbide ring or substituted or unsubstituted heterocycle formed by R' and R'' together is an electron-withdrawing group independently selected from the group consisting of halogens, CN, perfluorinated alkyl, and partially fluorinated or perfluorinated alkylaryl.

13. The active-matrix OLED display of claim 12, wherein the halogen is Cl or F, the perfluorinated alkyl group is a perfluorinated C1 to C8 alkyl group, and the partially fluorinated or perfluorinated alkyl aryl group is a partially fluorinated or perfluorinated C6 to C18 alkyl aryl group.

14. The active-matrix OLED display as claimed in claim 4, wherein R' is independently selected from the group consisting of substituted or unsubstituted C6 to C24 aryl groups, substituted or unsubstituted C2 to C20 heteroaryl groups; and R'' is independently selected from the group consisting of CN, CF3, NO2, and F.

15. The active matrix OLED display as claimed in claim 4, wherein A1, A2, and A3 are selected from A1=A2≠A3, or A1≠A2 and A1≠A3 and A2=A3.

16. The active-matrix OLED display as claimed in claim 4, wherein A1 is selected from formula (3) or (4): (3), (4), wherein X1 is selected from CR1 or N; X2 is selected from CR2 or N; X3 is selected from CR3 or N; X4 is selected from CR4 or N; X5 is selected from CR5 or N; R1, R2, R3, R4, and R5 are independently selected from the group consisting of an electron-withdrawing group, D, or H; wherein at least two of X1 to X5 are independently selected from CR1 to CR5; and wherein "" in formula (3) and (4) is a bond position of the double bond in formula (1) from A1 to.

17. The active-matrix OLED display as claimed in claim 16, wherein R1, R2, R3, R4, and R5 are independently selected from the group whose electron-withdrawing group is selected from the group consisting of CN, halogens, partially fluorinated or perfluorinated alkyl groups, and partially fluorinated or perfluorinated alkoxy groups.

18. The active-matrix OLED display of claim 17, wherein the halogen is Cl or F, the partially fluorinated or perfluorinated alkyl group is a partially fluorinated or perfluorinated C1 to C10 alkyl group, and the partially fluorinated or perfluorinated alkoxy group is a perfluorinated C1 to C6 alkoxy group.

19. The active matrix OLED display as claimed in claim 4, wherein A1 is selected from the group including D1 to D210: wherein the "" of the substituents on the groups D1 to D210 refers to the one-bond position of the double bond of A1 to formula (1).

20. The active-matrix OLED display as claimed in claim 4, wherein the quinone of the organic p-type dopant has formula (5) (5), wherein A1 and A2 are independently selected from formula (7): (7) or NR''', wherein "" is a single bond position of A1 and A2 to the double bond of formula (5) and formula (6): R' is selected from an electron-withdrawing group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted heteroaryl group, or a substituted or unsubstituted aryl group, wherein the substituents on R' are independently selected from the group consisting of D, H, and an electron-withdrawing group; R'' is selected from an electron-withdrawing group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted heteroaryl group, or a substituted or unsubstituted aryl group, wherein the substituents on R'' are independently selected from the group consisting of an electron-withdrawing group, D, or H; R' and R'' together form a substituted or unsubstituted ring, wherein the substituted or unsubstituted ring may be a substituted or unsubstituted carbocyclic ring or a substituted or unsubstituted heterocyclic ring; R''' is selected from a single bond, a substituted or unsubstituted C1 to C18 alkyl, a substituted or unsubstituted C6 to C24 aryl, a substituted or unsubstituted C6 to C24 heteroaryl, or CN, wherein the substituent on R''' is independently selected from the group consisting of substituted or unsubstituted C6 to C24 aryl and an electron-withdrawing group; R1, R2, R3, and R4 are independently selected from the group consisting of an electron-withdrawing group, a substituted or unsubstituted alkyl, a substituted or unsubstituted aryl, a substituted or unsubstituted heteroaryl, and a substituted alkoxy. The substituents on R1, R2, R3, and R4 are independently selected from the group consisting of: an electron-withdrawing group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted heteroaryl group, and a substituted or unsubstituted aryl group; wherein R1 and R2 together, or R3 and R4 together, independently form a substituted or unsubstituted carbocyclic ring or a substituted or unsubstituted heterocyclic ring; wherein the substituent is independently selected from the group consisting of: an electron-withdrawing group, a substituted or unsubstituted C6 to C18 aryl group, a substituted or unsubstituted C2 to C18 heteroaryl group, a substituted or unsubstituted carbocyclic ring, a substituted or unsubstituted carbocyclic ring, a substituted or unsubstituted carboalkyl group, and a substituted or unsubstituted alkylene group; wherein the substituent is independently selected from an electron-withdrawing group; wherein A1 and R3 together, and A2 and R4 together, independently form a substituted or unsubstituted heterocyclic ring; The substituent is independently selected from the group consisting of: substituted or unsubstituted C6 to C18 aryl groups, substituted or unsubstituted carbocyclic rings, substituted or unsubstituted carbocyclic rings, substituted or unsubstituted alkyl groups, and substituted or unsubstituted alkylene groups; wherein the substituent is independently selected from an electron-withdrawing group.

21. The active-matrix OLED display of claim 20, wherein R' is an electron-withdrawing group independently selected from the group consisting of: perfluorinated alkyl, NO2, F and CN, wherein the substituted or unsubstituted alkyl is a substituted or unsubstituted C1 to C8 alkyl, the substituted or unsubstituted heteroaryl is a substituted or unsubstituted C2 to C20 heteroaryl, and the substituted or unsubstituted aryl is a substituted or unsubstituted C6 to C24 aryl.

22. The active-matrix OLED display as claimed in claim 21, wherein the perfluorinated alkyl group is a perfluorinated C1 to C8 alkyl group.

23. The active-matrix OLED display as claimed in claim 20, wherein the substituent on R' is an electron-withdrawing group independently selected from the group consisting of: CN, halogens, partially fluorinated or perfluorinated alkyl groups, and partially fluorinated or perfluorinated alkoxy groups.

24. The active-matrix OLED display of claim 23, wherein the halogen is Cl or F, the partially fluorinated or perfluorinated alkyl group is a partially fluorinated or perfluorinated C1 to C10 alkyl group, and the partially fluorinated or perfluorinated alkoxy group is a partially fluorinated or perfluorinated C1 to C6 alkoxy group.

25. The active-matrix OLED display of claim 20, wherein R'' is an electron-withdrawing group independently selected from the group consisting of: perfluorinated alkyl, NO2, F, and CN, wherein the substituted or unsubstituted alkyl is a substituted or unsubstituted C1 to C8 alkyl, the substituted or unsubstituted heteroaryl is a substituted or unsubstituted C2 to C20 heteroaryl, and the substituted or unsubstituted aryl is a substituted or unsubstituted C6 to C24 aryl.

26. The active-matrix OLED display as claimed in claim 25, wherein the perfluorinated alkyl group is a perfluorinated C1 to C8 alkyl group.

27. The active-matrix OLED display as claimed in claim 20, wherein the substituent on R'' is an electron-withdrawing group independently selected from the group consisting of: CN, halogens, partially fluorinated or perfluorinated alkyl groups, and partially fluorinated or perfluorinated alkoxy groups.

28. The active-matrix OLED display of claim 27, wherein the halogen is Cl or F, the partially fluorinated or perfluorinated alkyl group is a partially fluorinated or perfluorinated C1 to C10 alkyl group, and the partially fluorinated or perfluorinated alkoxy group is a partially fluorinated or perfluorinated C1 to C6 alkoxy group.

29. The active-matrix OLED display as claimed in claim 20, wherein the substituent on R''' is an electron-withdrawing group selected from the group consisting of CN, F, and perfluorinated C1 to C8 alkyl groups.

30. The active-matrix OLED display of claim 20, wherein R1, R2, R3, and R4 are independently electron-withdrawing groups independently selected from the group consisting of: halogens, partially fluorinated or perfluorinated alkyl groups, partially fluorinated or perfluorinated alkoxy groups, partially fluorinated or perfluorinated alkyl aryl groups, O, S, N, and CN, wherein the substituted or unsubstituted alkyl group is a substituted or unsubstituted C1 to C8 alkyl group, the substituted or unsubstituted aryl group is a substituted or unsubstituted C6 to C24 aryl group, the substituted or unsubstituted heteroaryl group is a substituted or unsubstituted C2 to C20 heteroaryl group, and the substituted or unsubstituted alkoxy group is a substituted or unsubstituted C1 to C8 alkoxy group.

31. The active-matrix OLED display of claim 30, wherein the halogen is F or Cl, the partially fluorinated or perfluorinated alkyl group is a partially fluorinated or perfluorinated C1 to C8 alkyl group, the partially fluorinated or perfluorinated alkoxy group is a partially fluorinated or perfluorinated C1 to C8 alkoxy group, and the partially fluorinated or perfluorinated alkyl aryl group is a partially fluorinated or perfluorinated C6 to C24 alkyl aryl group.

32. The active-matrix OLED display of claim 20, wherein the substituents on R1, R2, R3, and R4 are independently electron-withdrawing groups selected independently from the group consisting of CN, perfluorinated alkyl, NO2, and F, wherein the substituted or unsubstituted alkyl is a substituted or unsubstituted C1 to C8 alkyl, the substituted or unsubstituted aryl is a substituted or unsubstituted C6 to C24 aryl, the substituted or unsubstituted heteroaryl is a substituted or unsubstituted C2 to C20 heteroaryl, and the substituted or unsubstituted alkoxy is a substituted or unsubstituted C1 to C8 alkoxy.

33. The active-matrix OLED display as claimed in claim 32, wherein the perfluorinated alkyl group is a perfluorinated C1 to C8 alkyl group.

34. The active-matrix OLED display of claim 20, wherein the substituent on the substituted carbide ring or the substituted heterocycle formed by the R1 and R2 together, or the R3 and R4 together, is an electron-withdrawing group independently selected from the group consisting of: F, CN, perfluorinated C1 to C8 alkyl, and perfluorinated C1 to C8 alkoxy.

35. The active-matrix OLED display of claim 20, wherein the substituent on the substituted carbide ring or the substituted heterocycle formed by R1 and R2 together, or R3 and R4 together, is selected from the electron-withdrawing group. The substituent is independently selected from the group consisting of halogens, CN, perfluorinated alkyl, partially fluorinated or perfluorinated alkylaryl, and perfluorinated C1 to C8 alkoxy.

36. The active-matrix OLED display of claim 35, wherein the halogen is F or Cl, the perfluorinated alkyl group is CF3, the perfluorinated C1 to C8 alkoxy group is OCF3, and the partially fluorinated or perfluorinated alkyl aryl group is a partially fluorinated or perfluorinated C6 to C18 alkyl aryl group.

37. The active-matrix OLED display of claim 20, wherein the substituent on the substituent of the substituted heterocycle formed independently of A1 and R3 together or A2 and R4 together is an electron-withdrawing group independently selected from the group consisting of halogens, CN, perfluorinated alkyl groups, and partially fluorinated or perfluorinated alkyl aryl groups.

38. The active-matrix OLED display of claim 37, wherein the halogen is Cl or F, the perfluorinated alkyl group is CF3, and the partially fluorinated or perfluorinated alkyl aryl group is a partially fluorinated or perfluorinated C6 to C18 alkyl aryl group.

39. The active matrix OLED display as claimed in claim 4, wherein A1 and A2 are groups independently selected from D1 to D8: (D1), (D2), (D8), (D4), (D5), (D6), (D7), (D8), where "" is a one-bond position of the double bond of A1, A2 and A3 to formula (1), and is a one-bond position of the double bond of A1 and A2 to formula (5) and formula (6).

40. The active-matrix OLED display as claimed in claim 4, wherein A1 and A2 are selected from formulas (8) to (13): (8), (9), (10), (11), (12), and (13), wherein X1 is selected from CR1 or N; X2 is selected from CR2 or N; X3 is selected from CR3 or N; X4 is selected from CR4 or N; X5 is selected from CR5 or N; wherein one of R1, R2, R3, R4, and R5 is independently selected from an electron-withdrawing group, D, or H; wherein at least two of X1 to X5 are independently selected from CR1 to CR5.

41. The active-matrix OLED display as claimed in claim 40, wherein R1, R2, R3, R4, and R5 are independently electron-withdrawing groups selected from the group consisting of halogens, partially fluorinated or perfluorinated alkyl groups, partially fluorinated or perfluorinated alkoxy groups, and CN.

42. The active-matrix OLED display of claim 41, wherein the halogen is Cl or F, the partially fluorinated or perfluorinated alkyl group is a partially fluorinated or perfluorinated C1 to C10 alkyl group, and the partially fluorinated or perfluorinated alkoxy group is a partially fluorinated or perfluorinated C1 to C6 alkoxy group.

43. The active matrix OLED display as claimed in claim 4, wherein the compound comprising the p-type dopant of the quinone or the quinone class has the following structures E1 to E11: (E1), (E2), (E3), (E4), (E5), (E6), (E7), (E8), (E9), (E10), (E11).

44. The active-matrix OLED display as claimed in claim 4, wherein the substituted or unsubstituted aromatic compound comprising the condensation ring is represented by formulas (14a), (14b), (14c), (14d), (14e) and (15): (14a), (14b), (14c), (14d), (14e), wherein A1 is selected from or NR''', wherein "" is a single bond position of the double bond from A1 to formula (14), wherein R' is selected from an electron-withdrawing group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted heteroaryl group, or a substituted or unsubstituted aryl group, wherein the substituent of R' is independently selected from the group consisting of an electron-withdrawing group, D and H; R'' is selected from an electron-withdrawing group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted heteroaryl group, or a substituted or unsubstituted aryl group, The substituent in R'' is independently selected from the group consisting of: an electron-withdrawing group, D, and H; R''' is selected from a double bond, a substituted or unsubstituted C1 to C18 alkyl, a substituted or unsubstituted C6 to C24 aryl, a substituted or unsubstituted C6 to C24 heteroaryl, and CN; wherein the substituent on R''' is independently selected from the group consisting of: a substituted or unsubstituted C6 to C24 aryl, and an electron-withdrawing group; R1 and R2 are independently selected from the group consisting of: an electron-withdrawing group, a substituted alkyl, a substituted or unsubstituted aryl, and a substituted or unsubstituted heteroaryl; wherein the substituent in R1 and R2 is independently selected from the group consisting of: an electron-withdrawing group, a substituted or unsubstituted alkyl, a substituted or unsubstituted heteroaryl, and a substituted or unsubstituted aryl. R1 and R2 together form a substituted or unsubstituted carbocyclic ring or a substituted or unsubstituted heterocyclic ring; wherein the substituent on the ring is selected from the group consisting of: an electron-withdrawing group, a substituted or unsubstituted C6 to C18 aryl group, a substituted or unsubstituted C2 to C18 heteroaryl group, a substituted or unsubstituted carbocyclic ring, a substituted or unsubstituted carbocyclic ring, a substituted or unsubstituted carboalkyl group, and a substituted or unsubstituted alkylene group; wherein the substituent on Ra is selected from the group consisting of: an electron-withdrawing group; Y is independently selected from N or CRa, and Ra is independently selected from the group consisting of: H, D, an electron-withdrawing group, and a substituted or unsubstituted C1 to C8 alkyl group; wherein the substituent on Ra is independently selected from the group consisting of: an electron-withdrawing group, D, and H; wherein the two Ra form a substituted or unsubstituted carbocyclic ring or a substituted or unsubstituted heterocyclic ring;The substituent on the ring is independently selected from the group consisting of: an electron-withdrawing group, a substituted or unsubstituted C6 to C18 aryl group, a substituted or unsubstituted C2 to C18 heteroaryl group, a substituted or unsubstituted carbocyclic ring, a substituted or unsubstituted carbocyclic ring, a substituted or unsubstituted alkylene group, or a substituted or unsubstituted alkylene group; wherein the two Y groups form a substituted or unsubstituted carbocyclic ring or a substituted or unsubstituted heterocyclic ring; wherein the substituent on the ring may be an electron-withdrawing group, a substituted or unsubstituted C6 to C18 aryl group, a substituted or unsubstituted C2 to C18 heteroaryl group, a substituted or unsubstituted carbocyclic ring, a substituted or unsubstituted carbocyclic ring, a substituted or unsubstituted alkylene group, or a substituted or unsubstituted alkylene group; (15), wherein R1, R2, R3, R4, R5, and R6 are independently selected from the group consisting of H, F, CN, CF3, and NO2, wherein at least one of R1, R2, R3, R4, R5, and R6 is F, CN, CF3, or NO2.

45. The active-matrix OLED display as claimed in claim 44, wherein R' is an electron-withdrawing group independently selected from the group consisting of: perfluorinated alkyl, CN, NO2, and F, or wherein R' is a substituted or unsubstituted heteroaryl group that is a substituted or unsubstituted C2 to C20 heteroaryl group, the substituted or unsubstituted aryl group that is a substituted or unsubstituted C6 to C24 aryl group, and the substituted or unsubstituted alkyl group that is a substituted or unsubstituted C1 to C8 alkyl group.

46. ​​The active-matrix OLED display as claimed in claim 45, wherein the perfluorinated alkyl group is a perfluorinated C1 to C8 alkyl group.

47. The active-matrix OLED display as claimed in claim 44, wherein the substituent on R' is an electron-withdrawing group independently selected from the group consisting of: CN, halogens, partially fluorinated or perfluorinated alkyl groups, and partially fluorinated or perfluorinated alkoxy groups.

48. The active-matrix OLED display of claim 47, wherein the halogen is Cl or F, the partially fluorinated or perfluorinated alkoxy group is a partially fluorinated or perfluorinated C1 to C6 alkoxy group, or the partially fluorinated or perfluorinated alkyl group is a partially fluorinated or perfluorinated C1 to C10 alkyl group.

49. The active-matrix OLED display as claimed in claim 44, wherein R'' is an electron-withdrawing group independently selected from the group consisting of perfluorinated alkyl, CN, NO2, and F, or wherein R'' is a substituted or unsubstituted heteroaryl group that is a substituted or unsubstituted C2 to C20 heteroaryl group, the substituted or unsubstituted aryl group that is a substituted or unsubstituted C6 to C24 aryl group, and the substituted or unsubstituted alkyl group that is a substituted or unsubstituted C1 to C8 alkyl group.

50. The active-matrix OLED display as claimed in claim 49, wherein the perfluorinated alkyl group is a perfluorinated C1 to C8 alkyl group.

51. The active-matrix OLED display as claimed in claim 44, wherein the substituent on R'' is an electron-withdrawing group independently selected from the group consisting of: CN, halogens, partially fluorinated or perfluorinated alkyl groups, and partially fluorinated or perfluorinated alkoxy groups.

52. The active-matrix OLED display of claim 51, wherein the halogen is Cl or F, the partially fluorinated or perfluorinated alkoxy group is a partially fluorinated or perfluorinated C1 to C6 alkoxy group, or the partially fluorinated or perfluorinated alkyl group is a partially fluorinated or perfluorinated C1 to C10 alkyl group.

53. The active-matrix OLED display as claimed in claim 44, wherein the substituent on R''' is an electron-withdrawing group independently selected from the group consisting of CN, F and perfluorinated C1 to C8 alkyl groups.

54. The active-matrix OLED display as claimed in claim 44, wherein R1 and R2 are independently selected from the group consisting of halogen, CN, partially fluorinated or perfluorinated C1 to C8 alkyl, partially fluorinated or perfluorinated C1 to C8 alkoxy, partially fluorinated or perfluorinated C1 to C8 alkyl aryl, O, S, and N, wherein the substituted alkyl is a substituted C1 to C8 alkyl, the substituted or unsubstituted aryl is a substituted C6 to C24 aryl, the substituted or unsubstituted heteroaryl is a substituted C2 to C20 heteroaryl, or the substituted alkoxy is a substituted C1 to C8 alkoxy.

55. The active-matrix OLED display of claim 54, wherein the halogen is Cl or F, and the partially fluorinated or perfluorinated alkyl aryl group is a partially fluorinated or perfluorinated C6 to C24 alkyl aryl group.

56. The active-matrix OLED display as claimed in claim 44, wherein the substituents on R1 and R2 are independently selected from the group consisting of CN, perfluorinated alkyl, NO2 and F, or wherein the substituents on R1 and R2 are independently substituted alkyl groups that are substituted C1 to C8 alkyl groups, substituted or unsubstituted heteroaryl groups that are substituted C2 to C20 heteroaryl groups, or substituted or unsubstituted aryl groups that are substituted or unsubstituted C6 to C24 aryl groups.

57. The active-matrix OLED display as claimed in claim 44, wherein the substituent on the ring of the substituted or unsubstituted carbocyclic or substituted or unsubstituted heterocyclic formed by R1 and R2 together is an electron-withdrawing group independently selected from the group consisting of: F, CN, perfluorinated C1 to C8 alkyl, and perfluorinated C1 to C8 alkoxy.

58. The active-matrix OLED display as claimed in claim 44, wherein the substituent on the ring of the substituted or unsubstituted carbocyclic or substituted or unsubstituted heterocyclic formed by R1 and R2 together is an electron-withdrawing group independently selected from the group consisting of halogens, CN, perfluorinated alkyl, partially fluorinated or perfluorinated alkylaryl, and perfluorinated C1 to C8 alkoxy.

59. The active-matrix OLED display of claim 58, wherein the halogen is F or Cl, the perfluorinated alkyl group is a perfluorinated C1 to C8 alkyl group, the partially fluorinated or perfluorinated alkyl aryl group is a partially fluorinated or perfluorinated C6 to C18 alkyl aryl group, or the perfluorinated C1 to C8 alkoxy group is CF3.

60. The active-matrix OLED display as claimed in claim 44, wherein Ra is an electron-withdrawing group independently selected from the group consisting of CN, perfluorinated C1 to C8 alkyl groups, and perfluorinated C1 to C8 alkoxy groups.

61. The active-matrix OLED display as claimed in claim 44, wherein the substituent on Ra is an electron-withdrawing group independently selected from the group consisting of: CN, halogens, partially fluorinated or perfluorinated alkyl groups, and partially fluorinated or perfluorinated alkoxy groups.

62. The active-matrix OLED display of claim 61, wherein the halogen is Cl or F, the partially fluorinated or perfluorinated alkyl group is a partially fluorinated or perfluorinated C1 to C10 alkyl group, or the partially fluorinated or perfluorinated alkoxy group is a partially fluorinated or perfluorinated C1 to C6 alkoxy group.

63. The active-matrix OLED display as claimed in claim 44, wherein the substituent on the ring of the substituted or unsubstituted carbocyclic or substituted or unsubstituted heterocyclic formed by two Ra is an electron-withdrawing group independently selected from the group consisting of: F, CN, perfluorinated C1 to C8 alkyl, and perfluorinated C1 to C8 alkoxy.

64. The active-matrix OLED display as claimed in claim 63, wherein the substituent of the substituted or unsubstituted carbocyclic or substituted or unsubstituted heterocyclic formed by two Ra is an electron-withdrawing group independently selected from the group consisting of: F, CN, perfluorinated C1 to C8 alkyl, and perfluorinated C1 to C8 alkoxy.

65. The active-matrix OLED display as claimed in claim 4, wherein the substituted or unsubstituted aromatic compound comprising the condensed ring has a structure of G1 to G5: (G1), (G2), (G3), (G4), and (G5).

66. The active-matrix OLED display of claim 16, wherein at least one R1 and R2 are independently selected from the group consisting of: CN, OCF3, F, perfluorinated C1 to C8 alkyl, substituted C6 to C24 aryl, wherein the substituent is F, CF3, CN, or substituted C1 to C8 alkyl.

67. The active-matrix OLED display of claim 1, wherein the first common semiconductor layer is selected from a common hole injection layer, a common hole injection layer composed of the organic p-type dopant, or a common hole transport layer including the organic p-type dopant and a hole transport material.

68. The active-matrix OLED display of claim 1, wherein the first common semiconductor layer, including at least one organic p-type dopant, is in direct contact with the anode layer, wherein the second common semiconductor layer is disposed between the first common semiconductor layer and the emitter layer.

69. The active-matrix OLED display as claimed in claim 1, wherein the second common semiconductor layer is a common hole transport layer or a common electron blocking layer.

70. The active-matrix OLED display as claimed in claim 1, wherein the resistance of the chip is determined by a transmission line method.

71. The active-matrix OLED display as claimed in claim 1, wherein the common organic layer stack further includes a common organic layer selected from the group consisting of a common electron injection layer, a common hole blocking layer and / or an electron transport layer.

72. The active-matrix OLED display as claimed in claim 1, wherein the active-matrix OLED display includes a driving circuit configured to drive the plurality of OLED pixels individually.

73. The active-matrix OLED display as claimed in claim 1, wherein the thickness of the electron blocking layer is greater than 0 nm and less than 170 nm.

74. The active-matrix OLED display as claimed in claim 1, wherein the thickness of the electron blocking layer is greater than 0 nm and less than 140 nm.

75. The active-matrix OLED display as claimed in claim 1, wherein the thickness of the electron blocking layer is greater than 0 nm and less than 130 nm.

76. The active-matrix OLED display as claimed in claim 1, wherein the first common semiconductor layer is shared by the plurality of OLED pixels, and / or the second common semiconductor layer is shared by the plurality of OLED pixels.

77. The active-matrix OLED display as claimed in claim 8, wherein the perfluorinated alkyl group is a perfluorinated C1 to C8 alkyl group.

78. The active-matrix OLED display as claimed in any one of claims 13, 22, 26, 29, 31, 33, 46, 49, 53, 54, 56, 59, 60, 66 and 77, wherein the perfluorinated C1 to C8 alkyl group is CF3.

79. The active-matrix OLED display as claimed in any one of claims 7, 10, 18, 24, 28, 42, 48, 52 and 62, wherein the perfluorinated C1 to C10 alkyl group is CF3.

80. The active-matrix OLED display as claimed in any one of claims 7, 10, 24, 28, 42, 48, 52 and 62, wherein the perfluorinated C1 to C6 alkoxy group is OCF3.

81. The active-matrix OLED display as claimed in any one of claims 31, 34, 54, 57, 59, 60, 63 and 64, wherein the perfluorinated C1 to C8 alkoxy group is OCF3.

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