Semiconductor device manufacturing method

Abstract

The present invention discloses a method for manufacturing a semiconductor device, comprising: a preparation step of preparing a stack having a support member, a temporary fixing material layer that absorbs light and generates heat, and a semiconductor component sequentially stacked; and a separation step of irradiating the temporary fixing material layer in the stack with incoherent light to separate the semiconductor component from the support member.

Description

Technical Field

[0001] This invention relates to a method for manufacturing a semiconductor device, a curable resin composition for a temporary fixing material, a film for a temporary fixing material, and a laminated film for a temporary fixing material. Prior Technology

[0002] In the field of semiconductor devices, technology for packaging known as System-in-Package (SIP), which involves stacking multiple semiconductor elements, has seen significant development in recent years. In SIP-type packaging, the semiconductor elements require thinner walls to accommodate the stacking of multiple semiconductor elements. To meet this requirement, after integrating the integrated circuitry into a semiconductor component (e.g., a semiconductor wafer), processing methods such as thinning the back side of the semiconductor component by grinding and individualizing the semiconductor wafer by dicing are performed. These processing methods for the semiconductor components typically involve temporarily fixing the semiconductor components to a support member using a temporary fixing layer (e.g., see Patent Documents 1-3).

[0003] Semiconductor components that have undergone processing are securely fixed to a support member via a temporary fixing layer. Therefore, in the manufacturing method of a semiconductor device, it is required to prevent damage to the semiconductor component and to allow the processed semiconductor component to be separated from the support member. Patent Document 1 discloses a method for separating such a semiconductor component by heating one side of the temporary fixing layer while physically separating it. Furthermore, Patent Documents 2 and 3 disclose a method for separating a semiconductor component by irradiating the temporary fixing layer with laser light (coherent light). [Existing Technical Documents] [Patent Literature]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2012-126803 [Patent Document 2] Japanese Patent Application Publication No. 2016-138182 [Patent Document 3] Japanese Patent Application Publication No. 2013-033814 Summary of the Invention

[0005] [The problem that the invention aims to solve]

[0006] However, the method disclosed in Patent Document 1 suffers from problems such as damage to the semiconductor wafer caused by thermal processes, resulting in reduced yield. On the other hand, the methods disclosed in Patent Documents 2 and 3 have the following problems: since the laser light is coherent light, the irradiation area is narrow, and the entire semiconductor component needs to be irradiated repeatedly, which takes time; since the focus of the laser light is controlled for scanning irradiation, the steps are complex, and expensive equipment is required.

[0007] The present invention was made in view of this actual situation, and its object is to provide a method for manufacturing a semiconductor device in which the temporarily fixed semiconductor components can be easily separated from the supporting components. Furthermore, the present invention aims to provide a curable resin composition for a temporary fixing material, a film for a temporary fixing material, and a laminated film for a temporary fixing material, all useful as temporary fixing materials. [Methods for solving problems]

[0008] One aspect of the present invention provides a method for manufacturing a semiconductor device, comprising: a preparation step of preparing a stack having sequentially deposited a support member, a temporary fixing material layer that absorbs light and generates heat, and a semiconductor component; and a separation step of irradiating the temporary fixing material layer in the stack with incoherent light to separate the semiconductor component from the support member.

[0009] The source of the incoherent light in the separation step can be a xenon lamp. The incoherent light in the separation step can be light that includes at least infrared light.

[0010] The separation step can be a step of irradiating the temporarily fixed material layer with incoherent light via a support member.

[0011] As an example, the temporary fixing layer may also contain a hardened material consisting of a hardened resin composition containing conductive particles that absorb light and generate heat.

[0012] The content of conductive particles can be 30 to 90 parts by mass relative to the total amount of components other than conductive particles in the curing resin composition of 100 parts by mass.

[0013] Curable resin compositions may further include thermoplastic resins. Curable resin compositions may further include polymerizable monomers and polymerization initiators.

[0014] As another example, the temporary fixing layer may also have a light-absorbing layer that absorbs light and generates heat, and a resin-cured layer containing a curing resin component.

[0015] The light-absorbing layer can also be formed by sputtering or vacuum evaporation.

[0016] On the other hand, the present invention provides a curable resin composition for temporary fixing material, which is used to temporarily fix a semiconductor component to a support component, and includes conductive particles that absorb light and generate heat.

[0017] The content of conductive particles can be 30 to 90 parts by mass relative to the total amount of components other than conductive particles in the curing resin composition of the temporary fixing material, which is 100 parts by mass.

[0018] The curable resin composition for temporary fixation materials may further include thermoplastic resins. Additionally, the curable resin composition for temporary fixation materials may further include polymerizable monomers and polymerization initiators.

[0019] The present invention may also relate to the use of a curable resin composition as a temporary fixation material or in the manufacture of a temporary fixation material, said curable resin composition containing conductive particles that absorb light and generate heat.

[0020] On the other hand, the present invention provides a film for temporarily fixing a semiconductor component to a support component, and includes a curable resin composition for the temporary fixing material.

[0021] In another aspect, the present invention provides a laminated film for temporary fixing material, which is used to temporarily fix a semiconductor component to a support component, and has a light-absorbing layer that absorbs light and generates heat, and a resin layer containing a curable resin component. [The effects of the invention]

[0022] According to the present invention, a method for manufacturing a semiconductor device in which the temporarily fixed semiconductor component can be easily separated from the support component is provided. Furthermore, according to the present invention, a curable resin composition for a temporary fixing material, a film for a temporary fixing material, and a laminated film for a temporary fixing material, all useful as temporary fixing materials, are provided. The curable resin composition for a temporary fixing material in several forms can form a temporary fixing material layer with excellent heat resistance. Simple Explanation of the Diagram

[0023] Figures 1A and 1B are schematic cross-sectional views illustrating one embodiment of the semiconductor device manufacturing method of the present invention. Figures 1A and 1B are schematic cross-sectional views showing each step. Figure 2 is a schematic cross-sectional view showing one embodiment of the temporary fixing material precursor layer. Figures 3A, 3B, 3C, and 3D are schematic cross-sectional views showing one embodiment of a laminate formed using the temporary fixing material precursor layer shown in Figure 2. Figures 4A and 4B are schematic cross-sectional views illustrating one embodiment of the method for manufacturing a semiconductor device of the present invention using the multilayer shown in Figure 3D. Figures 4A and 4B are schematic cross-sectional views showing each step. Figures 5A, 5B, and 5C are schematic cross-sectional views showing another embodiment of the temporary fixing material precursor layer. Figures 6A, 6B, 6C, and 6D are schematic cross-sectional views showing one embodiment of a laminate formed using the temporary fixing material precursor layer shown in Figure 5A. Figures 7A and 7B are schematic cross-sectional views illustrating one embodiment of the method for manufacturing a semiconductor device of the present invention using the multilayer shown in Figure 6D. Figures 7A and 7B are schematic cross-sectional views showing each step. Figures 8A, 8B, and 8C are schematic cross-sectional views illustrating another embodiment of the manufacturing method of the laminate shown in Figure 1A. Figures 8A, 8B, and 8C are schematic cross-sectional views showing each step. Implementation

[0024] The embodiments of the present invention will now be described with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments. In the following embodiments, unless specifically stated otherwise, the constituent elements (including steps, etc.) are not essential. The sizes of the constituent elements in the figures are conceptual sizes, and the relative sizes of the constituent elements are not limited to those shown in the figures.

[0025] The numerical values ​​and their ranges in this specification are not intended to limit the invention. The numerical ranges indicated by "~" in this specification represent the range of minimum and maximum values, respectively, before and after the "~". Within the numerical ranges described in stages in this specification, the upper or lower limit of one numerical range can be replaced by the upper or lower limit of another numerical range. Furthermore, the upper or lower limit of the numerical range described in this specification can also be replaced by the values ​​shown in the embodiments.

[0026] In this specification, (meth)acrylic acid means acrylic acid or its corresponding methacrylic acid. The same applies to other similar expressions such as (meth)acrylate, (meth)acrylic acid, etc.

[0027] [Semiconductor Device Manufacturing Method] The method for manufacturing a semiconductor device according to this embodiment includes: a preparation step, preparing a stack having sequentially deposited a support member, a temporary fixing material layer that absorbs light and generates heat (hereinafter, sometimes simply referred to as "temporary fixing material layer"), and a semiconductor component; and a separation step, irradiating the temporary fixing material layer in the stack with incoherent light to separate the semiconductor component from the support member.

[0028] <Preparation steps for laminated bodies> Figures 1A and 1B are schematic cross-sectional views illustrating one embodiment of the semiconductor device manufacturing method of the present invention. Figures 1A and 1B are schematic cross-sectional views showing each step. As shown in Figure 1A, in the preparation step of the laminate, a laminate 100 is prepared in which a support member 10, a temporary fixing material layer 20c or a temporary fixing material layer 30c, and a semiconductor member 40 are sequentially laminated.

[0029] The support member 10 is not particularly limited, and can be, for example, a glass substrate, a resin substrate, a silicon wafer, a metal film, etc. The support member 10 can be a substrate that does not obstruct the transmission of light, and can be a glass substrate.

[0030] The thickness of the support member 10 can be, for example, 0.1 mm to 2.0 mm. If the thickness is 0.1 mm or more, operation tends to be easier, and if the thickness is 2.0 mm or less, material costs tend to be reduced.

[0031] The temporary fixing layer 20c or 30c is a layer used to temporarily fix the support member 10 and the semiconductor member 40, and is a layer that absorbs light and generates heat when irradiated. The light that is absorbed in the temporary fixing layer 20c or 30c can be any light including infrared light, visible light, or ultraviolet light. As described later, the temporary fixing layer 20c or 30c can contain conductive particles (hereinafter, sometimes simply referred to as "conductive particles") that absorb light and generate heat, or it can have a light-absorbing layer (hereinafter, sometimes simply referred to as "light-absorbing layer") that absorbs light and generates heat. The conductive particles and the light-absorbing layer can generate heat efficiently, so the light that is absorbed in the temporary fixing layer 20c or 30c can be light that includes at least infrared light. In addition, the temporary fixing layer 20c or 30c can be a layer that absorbs infrared light and generates heat when irradiated with light including infrared light.

[0032] The laminate 100 shown in Figure 1A can be fabricated, for example, by forming a temporary fixing material precursor layer containing a curable resin component on a support member, placing a semiconductor component on the temporary fixing material precursor layer, and curing the curable resin component in the temporary fixing material precursor layer to form a temporary fixing material layer containing a cured material.

[0033] (Temporary fixing material precursor layer: First embodiment) In one embodiment, the temporary fixation material precursor layer contains a curable resin composition comprising conductive particles that absorb light and generate heat. Figure 2 is a schematic cross-sectional view showing one embodiment of the temporary fixation material precursor layer. As shown in Figure 2, the temporary fixation material precursor layer 20 may contain conductive particles 22 and a curable resin component 24. That is, the curable resin composition may contain both conductive particles and a curable resin component. The curable resin component 24 may be a curable resin component that is cured by heat or light.

[0034] The conductive particles 22 are not particularly limited as long as they generate heat by absorbing light, and can generate heat by absorbing infrared light. For example, the conductive particles 22 can be at least one selected from the group consisting of silver powder, copper powder, nickel powder, aluminum powder, chromium powder, iron powder, brass powder, tin powder, titanium alloy, gold powder, alloy copper powder, copper oxide powder, silver oxide powder, tin oxide powder, and conductive carbon powder. From the viewpoint of operability and safety, the conductive particles 22 can also be at least one selected from the group consisting of silver powder, copper powder, silver oxide powder, copper oxide powder, and carbon powder. Furthermore, the conductive particles 22 can also be particles in which a resin or metal core is formed and the core is plated with a metal such as nickel, gold, or silver. Moreover, from the viewpoint of dispersibility with solvents, the conductive particles 22 can also be particles whose surface is treated with a surface treatment agent.

[0035] Surface treatment agents can be, for example, silane coupling agents. Examples of silane coupling agents include: 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-methacryloxypropyltriethoxysilane, N- 2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, N-2-(aminoethyl)-3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, bis(triethoxypropyl)tetrasulfide, 3-isocyanate-propyltriethoxysilane, etc.

[0036] The shape of the conductive particles 22 is not particularly limited and can be granular, flat, etc. When the conductive particles 22 are carbon powder, they can also be granular, tubular, or filamentous.

[0037] The average particle size of the conductive particles 22 can be, for example, 0.1 μm to 5.0 μm. Here, the average particle size is the particle size (D 50) when the ratio (volume fraction) of the conductive particles 22 to the total volume is 50%. The average particle size (D 50) of the conductive particles 22 can be obtained by using a laser scattering type particle size measuring device (e.g., Microtrac) to measure the suspension in water containing the positive electrode active material by laser scattering.

[0038] The content of conductive particles 22 can be 30 to 90 parts by mass relative to 100 parts by mass of the total amount of components other than conductive particles in the curing resin composition. Furthermore, the components other than conductive particles in the curing resin composition do not contain the solvent described later. The content of conductive particles 22 can also be 35 parts by mass or more, 40 parts by mass or more, or 45 parts by mass or more. If the content of conductive particles 22 is 30 parts by mass or more relative to 100 parts by mass of the total amount of components other than conductive particles in the curing resin composition, there is a tendency for it to separate from the support member by irradiation with lower energy incoherent light. The content of conductive particles 22 can also be 80 parts by mass or less, 70 parts by mass or less, or 60 parts by mass or less. If the content of conductive particles 22 is 90 parts by mass or less relative to 100 parts by mass of the total amount of components other than conductive particles in the temporary fixing layer, there is a tendency to easily ensure the flatness of the temporary fixing layer.

[0039] Curable resin compositions may also contain thermoplastic resins, polymerizable monomers, and polymerization initiators.

[0040] Thermoplastic resins can be resins that are thermoplastic, or resins that are at least thermoplastic in their uncured state and form a cross-linked structure upon heating. Examples of thermoplastic resins include: elastomers, polycarbonates, polyphenylene sulfides, polyethersulfone, polyetherimides, polyetherimides, polyimides, petroleum resins, phenolic varnish resins, etc. These can be used alone or in combination of two or more. Among these, from the viewpoint of bump embedding and low-temperature adhesion, thermoplastic resins can be elastomers.

[0041] Specific examples of elastomers include: ethylene-propylene copolymer elastomers, ethylene-1-butene copolymer elastomers, ethylene-propylene-1-butene copolymer elastomers, ethylene-1-hexene copolymer elastomers, ethylene-1-octene copolymer elastomers, ethylene-styrene copolymer elastomers, ethylene-norbornene copolymer elastomers, propylene-1-butene copolymer elastomers, ethylene-propylene-non-conjugated diene copolymer elastomers, ethylene-1-butene-non-conjugated diene copolymer elastomers, ethylene-propylene-1-butene-non-conjugated diene copolymer elastomers, polyisoprene, and polybutadiene. Elastomers include: olefins, carboxyl-terminated polybutadiene, hydroxyl-terminated polybutadiene, 1,2-polybutadiene, carboxyl-terminated 1,2-polybutadiene, hydroxyl-terminated 1,2-polybutadiene, acrylic rubber, styrene-butadiene rubber, hydroxyl-terminated styrene-butadiene rubber, acrylonitrile-butadiene rubber, acrylonitrile-butadiene rubber containing carboxyl, hydroxyl, (meth)acrylic, or morpholino groups at the polymer terminus, carboxylated nitrile rubber, hydroxyl-terminated poly(oxypropyl), alkoxysilyl-terminated poly(oxypropyl), poly(oxytetramethylene) glycol, polyolefin glycol, poly-ε-caprolactone, etc. These elastomers can also be hydrogenated. Among these, the elastomer may be an elastomer containing monomer units derived from styrene.

[0042] The Tg of thermoplastic resins can be -100℃ to 500℃, -50℃ to 300℃, or -50℃ to 50℃. If the Tg of the thermoplastic resin is below 500℃, it tends to ensure flexibility when forming a film-like temporary fixing material, thus improving low-temperature adhesion. If the Tg of the thermoplastic resin is above -100℃, it tends to suppress the decrease in operability and peelability caused by excessive flexibility when forming a film-like temporary fixing material.

[0043] The Tg of a thermoplastic resin is the midpoint glass transition temperature obtained by differential scanning calorimetry (DSC). Specifically, the Tg of a thermoplastic resin is the midpoint glass transition temperature calculated according to the method of Japanese Industrial Standards (JIS) K 7121, based on the heat change measured under conditions of a heating rate of 10°C / min and a measurement temperature of -80°C to 80°C.

[0044] The weight-average molecular weight (Mw) of thermoplastic resins can range from 10,000 to 5,000,000 or from 100,000 to 2,000,000. If the weight-average molecular weight is above 10,000, there is a tendency to easily ensure the heat resistance of the formed temporary fixing layer. If the weight-average molecular weight is below 5,000,000, there is a tendency to easily suppress the reduction in flow and adhesion when forming a film-like temporary fixing layer. Furthermore, the weight-average molecular weight is a polystyrene conversion value obtained using gel permeation chromatography (GPC) and a standard curve of standard polystyrene.

[0045] The content of thermoplastic resin can be 10 to 90 parts by mass relative to 100 parts by mass of the total amount of components other than conductive particles in the curing resin composition. The content of thermoplastic resin can be 30 parts by mass or more, 50 parts by mass or more, or 70 parts by mass or more, and can be 88 parts by mass or less, 85 parts by mass or less, or 82 parts by mass or less. If the content of thermoplastic resin is within the aforementioned range, there is a tendency for better film formation and flatness of the temporarily fixed material layer.

[0046] There are no particular restrictions on the polymerizable monomer as long as it is polymerized by means of heating or ultraviolet light. From the viewpoint of material selectivity and ease of acquisition, polymerizable monomers can be, for example, compounds having polymerizable functional groups such as vinyl unsaturated groups. Examples of polymerizable monomers include: (meth)acrylates, vinylidene halide, vinyl ethers, vinyl esters, vinylpyridine, vinylamide, arylated vinyl groups, etc. Among these, the polymerizable monomer can be (meth)acrylate. (Meth)acrylates can be monofunctional, difunctional, or trifunctional or more, but from the viewpoint of obtaining sufficient curability, difunctional or more (meth)acrylates are preferred.

[0047] Examples of monofunctional (meth)acrylates include: (meth)acrylic acid; methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tributyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, methoxy polyethylene glycol (meth)acrylate, ethoxy polyethylene glycol (meth)acrylate, methoxy polypropylene glycol (meth)acrylate, ethoxy polypropylene glycol (meth)acrylate, mono(2-(meth)propyl)succinate. Aliphatic (meth)acrylates such as benzo(meth)acrylate; aromatic (meth)acrylates such as benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxy polyethylene glycol (meth)acrylate, nonylphenoxy polyethylene glycol (meth)acrylate, phenoxy polyethylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthyl)propyl (meth)acrylate, and 2-hydroxy-3-(2-naphthyl)propyl (meth)acrylate.

[0048] Examples of difunctional (meth)acrylates include: ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, polyethylene glycol dimethacrylate, propylene glycol dimethacrylate, dipropylene glycol dimethacrylate, tripropylene glycol dimethacrylate, tetrapropylene glycol dimethacrylate, polypropylene glycol dimethacrylate, ethoxylated polypropylene glycol dimethacrylate, 1,3-butanediol dimethacrylate, 1,4-butanediol dimethacrylate, neopentyl glycol dimethacrylate, 3-methyl-1,5-pentanediol dimethacrylate, 1,6-hexanediol dimethacrylate, and 2-butyl-2-ethyl-1,3-propanediol dimethacrylate. Aliphatic (meth)acrylates include 1,9-nonanediol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, glycerol di(meth)acrylate, tricyclodecanediethanol (meth)acrylate, ethoxylated 2-methyl-1,3-propanediol di(meth)acrylate, etc.; aromatic (meth)acrylates include ethoxylated bisphenol A di(meth)acrylate, propoxylated bisphenol A di(meth)acrylate, ethoxylated propoxylated bisphenol A di(meth)acrylate, ethoxylated bisphenol F di(meth)acrylate, propoxylated bisphenol F di(meth)acrylate, ethoxylated propoxylated bisphenol F di(meth)acrylate, ethoxylated eponymous di(meth)acrylate, propoxylated eponymous di(meth)acrylate, ethoxylated propoxylated eponymous di(meth)acrylate, etc.

[0049] Examples of multifunctional (meth)acrylates with three or more functions include: trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propoxylated trimethylolpropane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritol tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, ethoxylated propoxylated pentaerythritol tri(meth)acrylate. Aliphatic (meth) acrylates such as acrylates, pentaerythritol tetra(meth) acrylates, ethoxylated pentaerythritol tetra(meth) acrylates, propoxylated pentaerythritol tetra(meth) acrylates, ethoxylated propoxylated pentaerythritol tetra(meth) acrylates, di-trimethylolpropane tetraacrylates, dipentaerythritol hexa(meth) acrylates; aromatic epoxy (meth) acrylates such as phenolic varnish type epoxy (meth) acrylates, cresolic varnish type epoxy (meth) acrylates, etc.

[0050] These (meth)acrylates can be used alone or in combination of two or more. Furthermore, these (meth)acrylates can also be used in combination with other polymerizable monomers.

[0051] The content of polymeric monomers can be 10 to 90 parts by mass relative to 100 parts by mass of the total amount of components other than conductive particles in the curing resin composition. The content of polymeric monomers can also be 12 parts by mass or more, 15 parts by mass or more, or 18 parts by mass or more. If the content of polymeric monomers is 10 parts by mass or more relative to 100 parts by mass of the total amount of components other than conductive particles in the temporary fixing layer, there is a tendency for the temporary fixing layer to have excellent heat resistance. The content of polymeric monomers can also be 70 parts by mass or less, 50 parts by mass or less, or 30 parts by mass or less. If the content of polymeric monomers is 90 parts by mass or less relative to 100 parts by mass of the total amount of components other than conductive particles in the curing resin composition, there is a tendency to suppress peeling, breakage, etc. during the manufacturing process.

[0052] There are no particular restrictions on polymerization initiators, as long as they initiate polymerization through heating or exposure to ultraviolet light. For example, when using compounds with vinyl unsaturated groups as polymerizable monomers, the polymerization initiator can also be a thermal free radical polymerization initiator or a photofree radical polymerization initiator.

[0053] Examples of thermoradical polymerization initiators include: octyl peroxide, lauryl peroxide, stearyl peroxide, benzoyl peroxide, and other diacyl peroxides; trimethylolperoxide tributyl ester, trimethylolperoxide trihexyl ester, 1,1,3,3-tetramethylbutyl peroxide-2-ethylhexanoate, 2,5-dimethyl-2,5-bis(2-ethylhexylperoxy)hexane, trihexyl peroxide-2-ethylhexanoate, tributyl peroxide-2-ethylhexanoate, tributyl peroxide-2-ethylhexanoate, tributyl peroxide-isobutyrate, and trihexyl peroxide-isopropyl monocarbonate. Peroxide esters, including tert-butyl peroxide-3,5,5-trimethylhexanoate, tert-butyl peroxylaurate, tert-butyl peroxyisopropyl monocarbonate, tert-butyl peroxy-2-ethylhexyl monocarbonate, tert-butyl peroxybenzoate, tert-hexyl peroxybenzoate, 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, and tert-butyl peroxyacetic acid, etc.; and azo compounds such as 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylpentanitrile), and 2,2'-azobis(4-methoxy-2'-dimethylpentanitrile), etc.

[0054] Examples of photoradical polymerization initiators include: benzoin ketones such as 2,2-dimethoxy-1,2-diphenylethane-1-one; α-hydroxy ketones such as 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propane-1-one; and phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide.

[0055] These thermal and photoradical polymerization initiators can be used alone or in combination of two or more.

[0056] The content of the polymerization initiator can be 0.01 to 5 parts by mass relative to 100 parts by mass of the total polymerizable monomers. The content of the polymerization initiator can also be 0.03 parts by mass or more, or 0.05 parts by mass or more. If the content of the polymerization initiator is 0.01 parts by mass or more relative to 100 parts by mass of the total polymerizable monomers, there is a tendency for improved hardening properties and better heat resistance. The content of the polymerization initiator can also be 3 parts by mass or less, 1 part by mass or less, or 0.1 parts by mass or less. If the content of the polymerization initiator is 5 parts by mass or less relative to 100 parts by mass of the total polymerizable monomers, there is a tendency for gas generation during the process to be suppressed.

[0057] The curing resin composition may also contain thermosetting resin, curing accelerator, insulating filler, sensitizer, antioxidant, etc., as needed.

[0058] There are no particular limitations on thermosetting resins, as long as they are resins that cure by heat. Examples of thermosetting resins include: epoxy resins, acrylic resins, silicone resins, phenolic resins, thermosetting polyimide resins, polyurethane resins, melamine resins, urea resins, etc. These can be used alone or in combination of two or more. Among these, epoxy resins are considered thermosetting resins due to their superior heat resistance, workability, and reliability. When epoxy resin is used as a thermosetting resin, it can also be used in combination with an epoxy resin curing agent.

[0059] There are no particular limitations on epoxy resins as long as they possess heat resistance for curing purposes. Examples of epoxy resins include: difunctional epoxy resins such as bisphenol A type epoxides, phenolic varnish-type epoxy resins, cresol varnish-type epoxy resins, and other phenolic varnish-type epoxy resins. Furthermore, epoxy resins can also be polyfunctional epoxy resins, glycidylamine type epoxy resins, heterocyclic epoxy resins, or alicyclic epoxy resins.

[0060] Epoxy resin curing agents can be commonly used and known curing agents. Examples of epoxy resin curing agents include: amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenol A, bisphenol F, bisphenol S, and other phenolic resins that have two or more phenolic hydroxyl groups in one molecule, such as phenolic varnish resins, bisphenol A varnish resins, and cresol varnish resins.

[0061] The content of thermosetting resin and hardener can be 10 to 90 parts by mass relative to 100 parts by mass of the total amount of components other than conductive particles in the curing resin composition. If the content of thermosetting resin and hardener is within the aforementioned range, there is a tendency for the heat resistance to become better.

[0062] Examples of hardening accelerators include: imidazole derivatives, dicyandiamide derivatives, diacetic acid dihydrazine, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazolium-tetraphenylborate, 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate, etc. These can be used alone or in combination of two or more.

[0063] The content of curing accelerator can be 0.01 to 5 parts by weight relative to 100 parts by weight of the total amount of thermosetting resin and curing agent. If the content of curing accelerator is within the range described above, there is a tendency for improved curing properties and better heat resistance.

[0064] Insulating fillers can be added to impart low thermal expansion and low hygroscopicity to the resin composition. Examples of insulating fillers include: silicon dioxide, alumina, boron nitride, titanium dioxide, glass, ceramics, and other non-metallic inorganic fillers. These insulating fillers can be used alone or in combination of two or more. From the viewpoint of solvent dispersibility, insulating fillers can be particles whose surfaces have been treated with a surface treatment agent. The surface treatment agent can be the same as the silane coupling agent mentioned above.

[0065] The content of insulating filler can be 5 to 20 parts by mass relative to 100 parts by mass of the total amount of components other than conductive particles in the curing resin composition. If the content of insulating filler is within the aforementioned range, there is a tendency to further improve heat resistance without hindering light transmission. In addition, it may also contribute to light peelability.

[0066] Examples of sensitizers include: anthracene, phenanthrene, 1,2-benzophenanthrene, benzopyrene, 1,2-benzoacenaphthene, fluoranthene, pyrene, xanthone, indanthrin, thioxanthone-9-one, 2-isopropyl-9H-thioxanthone-9-one, 4-isopropyl-9H-thioxanthone-9-one, 1-chloro-4-propoxythioxanthone, etc.

[0067] The sensitizer content can be 0.01 to 10 parts by mass relative to 100 parts by mass of the total amount of components other than conductive particles in the curing resin composition. If the sensitizer content is within the aforementioned range, it tends to have less impact on the properties and film properties of the curing resin composition.

[0068] As antioxidants, examples include: quinone derivatives such as benzoquinone and hydroquinone; phenolic derivatives such as 4-methoxyphenol and 4-tert-butylcatechol; aminooxy derivatives such as 2,2,6,6-tetramethylpiperidin-1-oxy and 4-hydroxy-2,2,6,6-tetramethylpiperidin-1-oxy; and hindered amine derivatives such as tetramethylpiperidin methacrylate.

[0069] The antioxidant content can be 0.1 to 10 parts by mass relative to 100 parts by mass of the total amount of components other than the conductive particles in the curing resin composition. If the antioxidant content is within the aforementioned range, there is a tendency to inhibit the decomposition of the curing resin components and prevent contamination.

[0070] The temporary fixing material precursor layer 20 can be formed from a curable resin composition containing conductive particles 22 and curable resin components 24 (thermoplastic resin, polymerizable monomer, polymerization initiator, etc.).

[0071] The curable resin composition can also be used as a varnish for a curable resin composition diluted with a solvent. There are no particular restrictions on the solvent, as long as it can dissolve components other than the conductive particles 22 and the insulating filler. Examples of solvents include: aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone (MEK), methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethyl carbonate and propyl carbonate; and acetamides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These solvents can be used alone or in combination. In terms of solubility and boiling point, the solvent can be toluene, xylene, heptane, or cyclohexane.

[0072] The concentration of solid components in varnish can range from 10% to 80% by mass, based on the total mass of the varnish.

[0073] The curable resin composition can be prepared by mixing and kneading conductive particles 22 and curable resin components 24 (thermoplastic resin, polymerizable monomers, polymerization initiators, etc.). The mixing and kneading can be carried out by appropriately combining common dispersers such as mixers, pounders, three-roll mills, and bead mills.

[0074] Curable resin compositions can also be formed into films. A film-formed curable resin composition (hereinafter sometimes referred to as a "film for temporary fixing material") can be formed by coating the curable resin composition onto a support film. In the case of using a varnish containing a curable resin composition diluted with a solvent, it can be formed by coating the curable resin composition onto a support film and removing the solvent by heating and drying.

[0075] The thickness of the temporary fixing material membrane can be adjusted to match the desired thickness of the temporary fixing material layer. From the perspective of stress relaxation, the thickness of the temporary fixing material membrane can be 0.1 μm to 2000 μm (2 mm) or 10 μm to 500 μm.

[0076] There are no particular limitations on the supporting film; examples include: polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; and films made of polycarbonate, polyamide, polyimide, polyamide-imide, polyether-imide, polyether sulfide, polyether ketone, polyphenylene ether, polyphenylene sulfide, poly(meth)acrylate, polyurethane, and liquid crystal polymers. These can also be demolded. The thickness of the supporting film can be, for example, 3 μm to 250 μm.

[0077] Methods for coating a curable resin composition onto a support film include, for example, spin coating, spray coating, printing, film transfer coating, slot coating, scanning coating, inkjet coating, etc.

[0078] The temporary fixing material placed on the support membrane may have a protective film provided as needed. Examples of protective films include: polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; and polyolefins such as polyethylene and polypropylene. The thickness of the protective film can be, for example, 10 μm to 250 μm.

[0079] Temporary fixation film can be easily stored, for example, by being rolled into a roll. Alternatively, the rolled temporary fixation film can be cut into a better size and made into sheets for storage.

[0080] The temporary fixing material precursor layer 20 can be formed by directly applying a curable resin composition to the support member 10. In the case of using a varnish containing a curable resin composition diluted with a solvent, it can be formed by applying the curable resin composition to the support member 10 and removing the solvent by heating and drying.

[0081] The method of directly applying the curable resin composition to the support member 10 can also be the same as the method of applying the curable resin composition to the support film.

[0082] The temporary fixing material precursor layer 20 can also be formed by laminating a pre-made temporary fixing material film onto the support member 10. The lamination can be performed using a roller laminator, vacuum laminator, etc., under specified conditions (e.g., room temperature (20°C) or under heating).

[0083] From the perspective of stress relaxation, the thickness of the temporary fixing material precursor layer 20 can be 0.1 μm to 2000 μm (0.0001 mm to 2 mm) or 10 μm to 500 μm.

[0084] (Temporary fixing material precursor layer: Second embodiment) In another embodiment, the temporary fixing material precursor layer has a light-absorbing layer that absorbs light and generates heat, and a resin layer containing a curable resin component. Figures 5A, 5B, and 5C are schematic cross-sectional views showing another embodiment of the temporary fixing material precursor layer. The temporary fixing material precursor layer 30 has no particular limitation on its configuration if it has a light-absorbing layer 32 and a resin layer 34. For example, configurations such as having a light-absorbing layer 32 and a resin layer 34 sequentially from the support member 10 side (Figure 5A), having a resin layer 34 and a light-absorbing layer 32 sequentially from the support member 10 side (Figure 5B), and having a light-absorbing layer 32, a resin layer 34, and a light-absorbing layer 32 sequentially (Figure 5C) are all possible. Among these, the temporary fixing material precursor layer 30 can have a configuration where a light-absorbing layer 32 and a resin layer 34 sequentially are from the support member 10 side (Figure 5A). Hereinafter, a detailed description will be given of the configuration of the temporary fixing material precursor layer 30 shown in Figure 5A.

[0085] One form of the light-absorbing layer 32 is a layer (hereinafter sometimes referred to as a "conductor layer") containing a conductive material (hereinafter sometimes simply referred to as a "conductor") that absorbs light and generates heat. There are no particular limitations on the conductor constituting this conductive layer; it can be a conductor that absorbs infrared light and generates heat. Examples of conductors include: metals such as chromium, copper, titanium, silver, platinum, and gold; alloys such as nickel-chromium, stainless steel, and copper-zinc; metal oxides such as indium tin oxide (ITO), zinc oxide, and niobium oxide; and carbon materials such as conductive carbon. One or more of these can be used alone or in combination. The conductor can be chromium, titanium, copper, aluminum, silver, gold, platinum, or carbon.

[0086] The light-absorbing layer 32 may also comprise multiple conductive layers. Examples of such a light-absorbing layer include a first conductive layer disposed on the support member 10, and a second conductive layer disposed on the surface of the first conductive layer opposite to the support member 10. From the viewpoints of adhesion to the support member (e.g., glass), film-forming properties, thermal conductivity, and low heat capacity, the conductor in the first conductive layer may be titanium. From the viewpoints of high coefficient of thermal expansion and high thermal conductivity, the conductor in the second conductive layer may be copper, aluminum, silver, gold, or platinum, with copper or aluminum being preferred.

[0087] The light-absorbing layer 32 can be formed directly on the support member 10 by physical vapor deposition (PVD) such as vacuum evaporation and sputtering, electrolytic plating, electroless plating, and chemical vapor deposition (CVD) such as plasma chemical evaporation. Among these methods, since a large area of ​​conductive material can be formed, the conductive material layer can also be formed by physical vapor deposition, sputtering, or vacuum evaporation.

[0088] From the viewpoint of easy stripping, the thickness of one state of the light-absorbing layer 32 can be 1 nm to 5000 nm (0.001 μm to 5 μm) or 50 nm to 3000 nm (0.05 μm to 3 μm). When the light-absorbing layer 32 includes a first conductive layer and a second conductive layer, the thickness of the first conductive layer can be 1 nm to 1000 nm, 5 nm to 500 nm, or 10 nm to 100 nm, and the thickness of the second conductive layer can be 1 nm to 5000 nm, 10 nm to 500 nm, or 50 nm to 200 nm.

[0089] Another form of the light-absorbing layer 32 is a cured layer containing a curable resin composition comprising conductive particles that absorb light and generate heat. The curable resin composition may contain both conductive particles and a curable resin component. The curable resin component may be a curable resin component that is cured by heat or light. The conductive particles may be the same as those exemplified as the conductive particles 22. There are no particular limitations on the curable resin component; for example, examples include the curable resin component exemplified in the first embodiment of the temporary fixing material precursor layer.

[0090] The content of conductive particles can be 10 to 90 parts by mass relative to the total amount of components other than conductive particles in the curing resin composition (100 parts by mass). Furthermore, the components other than conductive particles in the curing resin composition do not contain the organic solvents described later. The content of conductive particles can also be 15 parts by mass or more, 20 parts by mass or more, or 25 parts by mass or more. The content of conductive particles can also be 80 parts by mass or less, or 50 parts by mass or less.

[0091] The curable resin composition may also contain thermosetting resin, a curing agent, and a curing accelerator. The content of thermosetting resin may be 10 to 90 parts by mass relative to 100 parts by mass of the total amount of components other than conductive particles in the curable resin composition. The content of the curing agent and curing accelerator may be 0.01 to 5 parts by mass relative to 100 parts by mass of the total amount of thermosetting resin.

[0092] The light-absorbing layer 32 can be formed of a curable resin composition containing conductive particles that absorb light and generate heat. The curable resin composition can also be used as a varnish of a curable resin composition diluted with an organic solvent. Examples of organic solvents include acetone, ethyl acetate, butyl acetate, and methyl ethyl ketone (MEK). These organic solvents can be used alone or in combination. The concentration of solids in the varnish can be from 10% to 80% by mass based on the total mass of the varnish.

[0093] The light-absorbing layer 32 can be formed by directly applying a curable resin composition to the support member 10. In the case of using a varnish containing a curable resin composition diluted with an organic solvent, it can be formed by applying the curable resin composition to the support member 10 and removing the solvent by heating and drying.

[0094] From the perspective of light exfoliation, the thickness of another state of the light absorption layer 32 can be 1 nm to 5000 nm (0.001 μm to 5 μm) or 50 nm to 3000 nm (0.05 μm to 3 μm).

[0095] Subsequently, resin layer 34 is formed on light-absorbing layer 32.

[0096] The resin layer 34 is a layer that does not contain conductive particles and contains a curable resin component that is cured by heat or light. The resin layer 34 may also be a layer containing a curable resin component. There are no particular limitations on the curable resin component; for example, examples from the curable resin component described in the first embodiment of the temporary fixing material precursor layer can be cited. The resin layer 34 may be formed from a curable resin component (a curable resin composition that does not contain conductive particles). The curable resin component may also be diluted with a solvent to be used as a varnish. The concentration of solid components in the varnish may be 10% to 80% by mass based on the total mass of the varnish.

[0097] The resin layer 34 can be formed by directly coating the curable resin component onto the light-absorbing layer 32. In the case of using a varnish containing a curable resin component diluted with a solvent, it can be formed by coating the curable resin component onto the light-absorbing layer 32 and removing the solvent by heating and drying. Alternatively, the resin layer 34 can also be formed by fabricating a film containing the curable resin component.

[0098] From the perspective of stress relaxation, the thickness of the resin layer 34 can be 0.1 μm to 2000 μm (0.0001 mm to 2 mm) or 10 μm to 150 μm.

[0099] The temporary fixing material precursor layer 30 can also be manufactured by laminating a pre-made laminated film having a light absorption layer 32 and a resin layer 34 (hereinafter, sometimes referred to as "laminated film for temporary fixing material") with the light absorption layer 32 connected to the support member 10.

[0100] The composition of the light-absorbing layer 32 and resin layer 34 in the laminated film for temporary fixing materials is not particularly limited as long as it includes both a light-absorbing layer 32 and a resin layer 34. Examples include compositions having only a light-absorbing layer 32 and a resin layer 34, or compositions having a light-absorbing layer 32, a resin layer 34, and a light-absorbing layer 32 in sequence. In these cases, the laminated film for temporary fixing materials can have only a light-absorbing layer 32 and a resin layer 34. The light-absorbing layer 32 can also be a layer containing a conductor (conductive layer) or a layer containing conductive particles. The laminated film for temporary fixing materials can also be disposed on a support film, or a protective film can be disposed on the surface opposite to the support film as needed.

[0101] From the viewpoint of easy peeling, the thickness of the light-absorbing layer 32 in the laminated film for temporary fixation material can be 1 nm to 5000 nm (0.001 μm to 5 μm) or 50 nm to 3000 nm (0.05 μm to 3 μm).

[0102] From the perspective of stress relaxation, the thickness of the resin layer 34 in the laminated film for temporary fixing materials can be 0.1 μm to 2000 μm (0.0001 mm to 2 mm) or 10 μm to 150 μm.

[0103] The thickness of the laminated film for temporary fixing material can be adjusted to match the desired thickness of the temporary fixing material layer. From the perspective of stress relaxation, the thickness of the laminated film for temporary fixing material can be 0.1 μm to 2000 μm (0.0001 mm to 2 mm) or 10 μm to 150 μm.

[0104] The temporary fixing material precursor layer 30 shown in Figure 5B can be fabricated, for example, by forming a resin layer 34 on the support member 10, followed by the formation of a light-absorbing layer 32. The temporary fixing material precursor layer 30 shown in Figure 5C can be fabricated, for example, by alternately forming a light-absorbing layer 32, a resin layer 34, and a light-absorbing layer 32 on the support member 10. These temporary fixing material precursor layers 30 can also be fabricated by pre-fabricating a laminated film of the aforementioned temporary fixing material and laminating it onto the support member 10.

[0105] Subsequently, a semiconductor component is disposed on the fabricated temporary fixing material precursor layer, and the curable resin component in the temporary fixing material precursor layer is cured to form a temporary fixing material layer containing a curable resin composition including conductive particles, or a temporary fixing material layer having a light-absorbing layer and a curable resin composition containing a curable resin component. This forms a laminate in which a support member 10, a temporary fixing material layer 20c or 30c, and a semiconductor component 40 are sequentially stacked (Fig. 1A). Figs. 3A, 3B, 3C, and 3D are schematic cross-sectional views showing one embodiment of the laminate formed using the temporary fixing material precursor layer shown in Fig. 2. Figs. 6A, 6B, 6C, and 6D are schematic cross-sectional views showing one embodiment of the laminate formed using the temporary fixing material precursor layer shown in Fig. 5A.

[0106] Semiconductor component 40 may be a semiconductor wafer or a semiconductor wafer monolithically formed by cutting a semiconductor wafer to a specified size. When using a semiconductor wafer as semiconductor component 40, multiple semiconductor wafers are typically used. From the viewpoint of miniaturization, thinning of semiconductor devices, and suppression of breakage during transport and processing steps, the thickness of semiconductor component 40 may be 1 μm to 1000 μm, 10 μm to 500 μm, or 20 μm to 200 μm. A redistribution layer, a patterning layer, or an external connection component with external connection terminals may also be included on the semiconductor wafer or semiconductor chip.

[0107] The support member 10, which has a pre-fabricated temporary fixing material precursor layer 20 or temporary fixing material precursor layer 30, can be placed on a vacuum press or vacuum laminator, and the semiconductor component 40 can be configured by pressing.

[0108] When using a vacuum press, for example, with a gas pressure of less than 1 hPa, a pressing pressure of 1 MPa, a pressing temperature of 120°C to 200°C, and a holding time of 100 seconds to 300 seconds, the semiconductor component 40 is pressed onto the temporary fixing material precursor layer 20 or the temporary fixing material precursor layer 30.

[0109] When using a vacuum laminator, for example, with a gas pressure of less than 1 hPa, a lamination temperature of 60°C to 180°C or 80°C to 150°C, a lamination pressure of 0.01 MPa to 0.5 MPa or 0.1 MPa to 0.5 MPa, and a holding time of 1 second to 600 seconds or 30 seconds to 300 seconds, the semiconductor component 40 is pressed onto the temporary fixing material precursor layer 20 or the temporary fixing material precursor layer 30.

[0110] After the semiconductor component 40 is disposed on the support member 10 via the temporary fixing material precursor layer 20 or the temporary fixing material precursor layer 30, the curable resin component in the temporary fixing material precursor layer 20 or the temporary fixing material precursor layer 30 is thermo-cured or photo-cured under specified conditions. The thermo-curing conditions may be, for example, below 300°C or 100°C to 200°C, and for 1 minute to 180 minutes or 1 minute to 60 minutes. Thus, a cured product of the curable resin component is formed, and the semiconductor component 40 is temporarily fixed to the support member 10 via the temporary fixing material layer 20c or the temporary fixing material layer 30c containing the cured product of the curable resin component, thereby obtaining a laminate 200 or a laminate 300. As shown in FIG. 3A, the temporary fixing material layer 20c may contain conductive particles 22 and a cured product 24c of the curable resin component. As shown in Figure 6A, the temporary fixing layer 30c may include a light-absorbing layer 32 and a resin-cured layer 34c containing a curable resin component.

[0111] The multilayer can also be fabricated by placing a semiconductor component after forming a temporary fixing material layer. Figures 8A, 8B, and 8C are schematic cross-sectional views illustrating another embodiment of the manufacturing method of the multilayer shown in Figure 1A. Figures 8A, 8B, and 8C are schematic cross-sectional views showing each step. Each step in Figures 8A, 8B, and 8C uses the temporary fixing material precursor layer shown in Figure 5A. The multilayer can be fabricated by forming a temporary fixing material precursor layer 30 containing a curable resin component on a support member 10 (Figure 8A), curing the curable resin component in the temporary fixing material precursor layer 30 to form a cured temporary fixing material layer 30c containing the curable resin component (Figure 8B), and placing a semiconductor component 40 on the formed temporary fixing material layer 30c (Figure 8C). In this manufacturing method, before the semiconductor component 40 is disposed, a wiring layer 41 such as a rewiring layer and a patterning layer can be disposed on a temporary fixing material layer 30c. Therefore, a semiconductor component 40 having a wiring layer 41 can be formed by disposing the semiconductor component 40 on the wiring layer 41.

[0112] The semiconductor component 40 in the stacked layer 100 (the semiconductor component 40 temporarily fixed to the support component 10) can also be further processed. By processing the semiconductor component 40 in the stacked layer 200 shown in FIG. 3A, stacked layers 210 (FIG. 3B), 220 (FIG. 3C), and 230 (FIG. 3D) can be obtained. By processing the semiconductor component 40 in the stacked layer 300 shown in FIG. 6A, stacked layers 310 (FIG. 6B), 320 (FIG. 6C), and 330 (FIG. 6D) can be obtained. There are no particular limitations on the processing of the semiconductor component; examples include: thinning of the semiconductor component, fabrication of through electrodes, formation of wiring layers such as rewiring layers and patterned layers, etching processes, plating reflow processes, and sputtering processes.

[0113] The semiconductor component can be thinned by grinding the side of the semiconductor component 40 opposite to the side that is in contact with the temporary fixing layer 20c or the temporary fixing layer 30c using a grinding machine or the like. The thickness of the thinned semiconductor component can be, for example, 100 μm or less.

[0114] The grinding conditions can be set arbitrarily according to the desired thickness of the semiconductor component, grinding state, etc.

[0115] The through-hole can be fabricated by performing dry ion etching, Bosch process, or other processing on the side opposite to the surface of the thinned semiconductor component 40 that is in contact with the temporary fixing material layer 20c or the temporary fixing material layer 30c, forming a through-hole, and then performing copper plating or other processing.

[0116] The semiconductor component 40 is processed in the manner described above, for example, by thinning the semiconductor component 40, thereby obtaining a stacked body 210 (FIG. 3B) or a stacked body 310 (FIG. 6B) provided with a through electrode 44.

[0117] As shown in Figures 3C and 6C, the laminate 210 shown in Figure 3B or the laminate 310 shown in Figure 6B can also be covered by the sealing layer 50. The material of the sealing layer 50 is not particularly limited; from the viewpoint of heat resistance and reliability, it can be a thermosetting resin composition. Examples of thermosetting resins used in the sealing layer 50 include: cresol phenolic varnish epoxy resin, phenolic varnish epoxy resin, biphenyl epoxy resin, naphthol phenolic varnish epoxy resin, and other epoxy resins. Fillers and / or flame-retardant substances such as bromine compounds can also be added to the composition used to form the sealing layer 50.

[0118] There are no particular restrictions on the supply form of the sealing layer 50; it can be a solid material, a liquid material, a fine particulate material, a membrane material, etc.

[0119] When sealing the processed semiconductor component 42 with the sealing layer 50 formed by the sealing film, a compression sealing molding machine, a vacuum lamination device, or the like can be used, for example. Using such a device, the sealing layer 50 can be formed by covering the processed semiconductor component 42 with the hot-melted sealing film under conditions of 40°C to 180°C (or 60°C to 150°C), 0.1 MPa to 10 MPa (or 0.5 MPa to 8 MPa), and 0.5 minutes to 10 minutes. The sealing film can also be prepared in the form of a release liner such as polyethylene terephthalate (PET) film. In this case, after the sealing film is placed on and embedded in the processed semiconductor component 42, the release liner is peeled off, thereby forming the sealing layer 50. Thus, the laminate 220 shown in FIG. 3C or the laminate 320 shown in FIG. 6C can be obtained.

[0120] The thickness of the sealing film is adjusted such that the sealing layer 50 is at least as thick as the semiconductor component 42 being processed. The thickness of the sealing film can be 50 μm to 2000 μm, 70 μm to 1500 μm, or 100 μm to 1000 μm.

[0121] As shown in Figures 3D and 6D, the processed semiconductor component 42 with the sealing layer 50 can also be monolithized by dicing. In this way, the laminate 230 shown in Figure 3D or the laminate 330 shown in Figure 6D can be obtained. Furthermore, monolithization by dicing can also be performed after the semiconductor component separation step described later.

[0122] <Separation steps of semiconductor components> As shown in Figure 1B, in the semiconductor component separation step, incoherent light is irradiated onto the temporary fixing material layer 20c or the temporary fixing material layer 30c in the stack 100, thereby separating the semiconductor component 40 from the self-supporting component 10.

[0123] Figures 4A and 4B are schematic cross-sectional views illustrating an embodiment of the method for manufacturing a semiconductor device of the present invention using the multilayer shown in Figure 3D. Figures 4A and 4B are schematic cross-sectional views showing each step. Figures 7A and 7B are schematic cross-sectional views illustrating an embodiment of the method for manufacturing a semiconductor device of the present invention using the multilayer shown in Figure 6D. Figures 7A and 7B are schematic cross-sectional views showing each step.

[0124] When the temporary fixing layer 20c or 30c is irradiated with incoherent light, the conductive particles 22 or the light-absorbing layer 32 absorb the light and instantly generate heat. This results in the melting of the heat-cured resin component 24c or the resin-cured layer 34c at the interface or throughout the entire structure, stress on the support member 10 and the semiconductor member 40 (processed semiconductor member 42), and the scattering of the conductive particles 22 or the light-absorbing layer 32. This phenomenon allows the temporarily fixed processed semiconductor member 42 to be easily separated (peeled) from the support member 10. Furthermore, during the separation step, while irradiating with incoherent light, slight stress can also be applied to the processed semiconductor member 42 in a direction parallel to the main surface of the support member 10.

[0125] Incoherent light is an electromagnetic wave characterized by its inability to produce interference fringes, low interferometry, and low directivity. It tends to attenuate as its optical path length increases. Incoherent light is light that is not coherent. Laser light is generally coherent, while sunlight, fluorescent light, and other similar light sources are incoherent. Incoherent light can also be referred to as light other than laser light. The illumination area of ​​incoherent light is much wider than that of coherent light (i.e., laser light), thus reducing the number of irradiations (e.g., one).

[0126] The incoherent light in the separation step can be light that includes at least infrared light. There are no particular limitations on the source of the incoherent light in the separation step; a xenon lamp can be used. A xenon lamp is a lamp that emits light by applying and discharging a light-emitting tube containing xenon gas. The xenon lamp repeatedly ionizes and excites while discharging, thus stably possessing a continuous wavelength from the ultraviolet to the infrared region. Compared to lamps such as metal halide lamps, xenon lamps require a shorter start-up time, thus significantly reducing the step time. Furthermore, while a high voltage is required during emission, resulting in instantaneous high heat, the cooling time is short, allowing for continuous operation. Additionally, the irradiation area of ​​a xenon lamp is much wider than that of a laser, thus reducing the number of irradiations (e.g., once).

[0127] The irradiation conditions of the xenon lamp can be arbitrarily set, including the applied voltage, pulse width, irradiation time, irradiation distance (distance between the light source and the temporary fixing material layer), and irradiation energy. The irradiation conditions of the xenon lamp can also be set to allow separation with a single irradiation or with two or more irradiations. From the viewpoint of reducing damage to the processed semiconductor component 42, the irradiation conditions of the xenon lamp can also be set to allow separation with a single irradiation.

[0128] The separation step can be a step of irradiating the temporary fixing layer 20c or the temporary fixing layer 30c with incoherent light via the support member 10 (direction A in Figures 4A and 7A). That is, the irradiation with incoherent light relative to the temporary fixing layer 20c or the temporary fixing layer 30c can be irradiation from the support member 10 side. By irradiating the temporary fixing layer 20c or the temporary fixing layer 30c with incoherent light via the support member 10, the entire temporary fixing layer 20c or the entire temporary fixing layer 30c can be irradiated.

[0129] When separating the semiconductor component 40 or the processed semiconductor component 42 from the support component 10, if residual 20c' (Fig. 4A, Fig. 4B) or 30c' (Fig. 7A, Fig. 7B) of a temporary fixing material layer is attached to the semiconductor component 40 or the processed semiconductor component 42, these residues can be cleaned with a solvent. There are no particular limitations on the solvents, and examples include: ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, hexane, etc. One of these solvents can be used alone or in combination of two or more. Alternatively, immersion in these solvents or ultrasonic cleaning can be performed. Furthermore, heating can be performed in the range of 100°C or below.

[0130] By separating the semiconductor component from the support component in the manner described above, a semiconductor element 60 (Figures 4B and 7B) comprising a semiconductor component 40 or a fabricated semiconductor component 42 can be obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to other semiconductor components or a substrate for mounting semiconductor components.

[0131] [Curing resin composition for temporary fixation materials] A curable resin composition containing conductive particles that absorb the light and generate heat can be preferably used as a temporary fixing material to temporarily fix a semiconductor component to a support component.

[0132] The content of conductive particles can be 30 to 90 parts by mass relative to 100 parts by mass of the total amount of components other than conductive particles in the curing resin composition. Furthermore, the components other than conductive particles in the curing resin composition do not contain solvents. The content of conductive particles can also be 35 parts by mass or more, 40 parts by mass or more, or 45 parts by mass or more. Alternatively, the content of conductive particles can be 80 parts by mass or less, 70 parts by mass or less, or 60 parts by mass or less.

[0133] The curable resin composition may further include thermoplastic resin. The content of thermoplastic resin may be 10 to 90 parts by mass relative to 100 parts by mass of the total amount of components other than conductive particles in the curable resin composition. The content of thermoplastic resin may also be 30 parts by mass or more, 50 parts by mass or more, or 70 parts by mass or more. The content of thermoplastic resin may also be 88 parts by mass or less, 85 parts by mass or less, or 82 parts by mass or less.

[0134] The curable resin composition may further include polymerizable monomers and polymerization initiators. The content of polymerizable monomers may be 10 to 90 parts by mass relative to 100 parts by mass of the total amount of components other than conductive particles in the curable resin composition. The content of polymerizable monomers may also be 12 or more parts by mass, 15 or more parts by mass, or 18 or more parts by mass. The content of polymerizable monomers may also be 70 or less parts by mass, 50 or less parts by mass, or 30 or less parts by mass. The content of polymerization initiators may be 0.01 to 5 parts by mass relative to 100 parts by mass of the total amount of polymerizable monomers. The content of polymerization initiators may also be 0.03 or more parts by mass or 0.05 or more parts by mass. The content of polymerization initiators may also be 3 or less parts by mass, 1 or less parts by mass, or 0.1 or less parts by mass.

[0135] Curable resin compositions can also form films.

[0136] [Temporary Fixing Material Membrane] A film comprising a curable resin composition for temporary fixing material can preferably be used as a temporary fixing material to temporarily fix semiconductor components to support components.

[0137] [Laminated film for temporary fixing materials] A laminated film having the light-absorbing layer and a resin layer containing a curable resin component can preferably be used as a temporary fixing material to temporarily fix a semiconductor component to a support component. [Example]

[0138] The present invention will be described in more detail below with reference to specific embodiments. However, the present invention is not limited to these embodiments.

[0139] [Examples 1-1 to 1-4 and Comparative Example 1-1] (Manufacturing Example 1-1) <Preparation of Curable Resin Compositions for Temporary Fixation Materials> 80 parts by weight of hydrogenated styrene-butadiene elastomer (trade name: Dynaron 2324P, JSR Corporation, Tg: -50℃) as a thermoplastic resin, 20 parts by weight of 1,9-nonanediol diacrylate (trade name: FA-129AS, Hitachi Chemical Co., Ltd.) as a polymerizable monomer, and 1 part by weight of peroxide ester (trade name: Perhexa 25O, Nippon Oil Co., Ltd.) as a polymerization initiator were mixed. Furthermore, the hydrogenated styrene-butadiene elastomer was used after being diluted with toluene to a solid content of 40% by weight. 50 parts by weight of conductive particles A (copper powder, trade name: 1300Y, Mitsui Metals & Mining Co., Ltd., shape: granular, average particle size (D50): 3.5 μm, tap density: 5.0 g / cm³) were added to this mixture. Using an automatic stirring device, the obtained mixture is stirred at 2200 rpm for 10 minutes to obtain a varnish containing a curing resin composition for temporary fixing material with toluene as a solvent.

[0140] <Preparation of Temporary Fixing Membrane> Using a precision coating machine, a varnish of the obtained curable resin composition for temporary fixing material was applied to the release surface of a polyethylene terephthalate (PET) film (Purex A31, Teijin DuPont Film Co., Ltd., thickness: 38 μm). The solvent was then removed by drying at 80°C for 10 minutes, thereby producing a temporary fixing material film of approximately 100 μm as described in Manufacturing Example 1-1.

[0141] <Preparation of Laminations (Evaluation Samples)> The temporary fixing material film of Manufacturing Example 1-1 was cut to a size of 5 mm × 5 mm. Using a glass slide (size: 15 mm × 20 mm, thickness: 1 mm) as a support member and a silicon wafer (size: 8 mm × 10 mm, thickness: 750 μm) as a semiconductor member, the temporary fixing material film of Manufacturing Example 1-1 was sandwiched between the silicon wafer and the glass slide. Temporary heat bonding was performed using a thermoforming machine at 90°C, 5 seconds, and 1 MPa. Subsequently, the temporary fixing material layer was heat-cured using an explosion-proof dryer at 150°C for 1 hour to form a laminate, thereby fabricating the laminate of Manufacturing Example 1-1.

[0142] (Manufacturing Examples 1-2) The conductive particle A was changed to conductive particle B (silver powder, trade name: K0082P, Metalor Corporation, shape: granular, average particle size (D 50): 1.5 μm, tap density: 5.0 g / cm 3), and the temporary fixing material film and laminate of Manufacturing Example 1-2 were manufactured in the same manner as in Manufacturing Example 1-1.

[0143] (Manufacturing Examples 1-3) The conductive particles A were changed to conductive particles C (silver powder, trade name: AgC-239, Fukuda Metal Foil Powder Industrial Co., Ltd., shape: flat, average particle size (D 50): 2.0 μm~3.4 μm, tap density: 4.2 g / cm 3~6.1 g / cm 3), and the temporary fixing material film and laminate of Manufacturing Examples 1-3 were manufactured in the same manner as in Manufacturing Example 1-1.

[0144] (Manufacturing Examples 1-4) The conductive particle A was changed to the conductive particle D (carbon powder, trade name: MA600, manufactured by Mitsubishi Chemical Corporation, shape: granular), and the temporary fixing material film and laminate of Manufacturing Examples 1-4 were manufactured in the same manner as in Manufacturing Example 1-1.

[0145] (Manufacturing Examples 1-5) The laminates of Manufacturing Examples 1-5 were manufactured in the same manner as Manufacturing Examples 1-1, except that conductive particles A were not added.

[0146] (Examples 1-1 to 1-4 and Comparative Example 1-1) <Peeling Test> A xenon lamp was used as the source of incoherent light. The laminates of Manufacturing Examples 1-1 to 1-5 were irradiated with a xenon lamp under the irradiation conditions shown in Table 1, and the peelability of the self-supporting member was evaluated. The xenon lamp used was an S2300 manufactured by Xenon Corporation (wavelength range: 270 nm to near-infrared region, irradiation energy per unit area: 17 J / cm²), and the temporary fixing material layer was irradiated via the support member (glass slide) of the laminate. The irradiation distance was the distance between the light source and the stage on which the glass slide was placed. Regarding the evaluation of the peelability test, those in which the silicon wafer peeled naturally from the glass slide after xenon lamp irradiation were rated "A"; those in which separation could be achieved without damage to the silicon wafer when tweezers were inserted between the silicon wafer and the glass slide were rated "B"; and those in which separation could not be achieved were rated "C". The results are shown in Table 1.

[0147] [Table 1] laminated body Apply voltage (V) Pulse width (μs) Irradiation distance (mm) Number of irradiations (times) Irradiation time (μs) evaluate Example 1-1a Manufacturing Example 1-1 3000 5000 10 1 5000 A Example 1-1b 3000 3000 A Examples 1-2 Manufacturing Examples 1-2 5000 5000 A Examples 1-3 Manufacturing Examples 1-3 A Examples 1-4 Manufacturing Examples 1-4 A Comparative Example 1-1 Manufacturing Examples 1-5 C

[0148] <Heat Resistance Test> The laminates of Manufacturing Examples 1-1 to 1-5 were heated, and the adhesion between the support member and the semiconductor member and the peelability of the self-supporting member after heat treatment were evaluated as heat resistance. Heating was performed by placing the laminates of Manufacturing Examples 1-1 to 1-5 on a heating plate heated to 260°C for 1 hour. Regarding the adhesion after heat treatment, those that did not separate when tweezers were inserted between the silicon wafer and the glass slide were evaluated as "A", and those that separated were evaluated as "B". The peelability of the self-supporting member after heat treatment was evaluated in the same way as the peelability test. Xenon lamp irradiation was performed using the same xenon lamp as the peelability test, with an applied voltage of 3000 V, a pulse width of 5000 μs, an irradiation distance of 10 mm, one irradiation cycle, and an irradiation time of 5000 μs. The results are shown in Table 2.

[0149] [Table 2] laminated body Adhesion after heat treatment Peelability after heat treatment Example 1-1 Manufacturing Example 1-1 A A Examples 1-2 Manufacturing Examples 1-2 A A Examples 1-3 Manufacturing Examples 1-3 A A Examples 1-4 Manufacturing Examples 1-4 A A Comparative Example 1-1 Manufacturing Examples 1-5 A C

[0150] Based on the comparison between Examples 1-1 to 1-4 and Comparative Example 1-1, it was determined that Examples 1-1 to 1-4 are superior to Comparative Example 1-1 in terms of the peelability of the self-supporting member. Furthermore, it was determined that the curable resin composition for the temporary fixing material of the present invention can form a temporary fixing material layer with excellent heat resistance.

[0151] [Example 2-1, Example 2-2 and Comparative Example 2-1] (Manufacturing Example 2-1) <Preparation of Curing Resin Components> 80 parts by weight of hydrogenated styrene-butadiene elastomer (trade name: Dynaron 2324P, JSR Corporation) as a thermoplastic resin, 20 parts by weight of 1,9-nonanediol diacrylate (trade name: FA-129AS, Hitachi Chemical Co., Ltd.) as a polymerization monomer, and 1 part by weight of peroxide ester (trade name: Perhexa 25O, Nippon Oil Co., Ltd.) as a polymerization initiator were mixed. Furthermore, the hydrogenated styrene-butadiene elastomer was diluted with toluene to a solid content of 40% by weight. A varnish containing a curable resin component with toluene as a solvent was prepared in this manner.

[0152] <Preparation of Curable Resin Compositions> A varnish of a curable resin composition is prepared by mixing 14 parts by weight of epoxy resin (trade name: EPICLON EXA-4816, DIC Corporation), 1 part by weight of hardener (trade name: Curezol 1B2MZ, Shikoku Chemical Industry Co., Ltd.), 60 parts by weight of conductive particles E (copper powder coated with silver, trade name: Ag1400YP, Mitsui Metals & Mining Co., Ltd., shape: flat), and 25 parts by weight of organic solvent (ethyl acetate).

[0153] Fabrication of laminated films for temporary fixation materials The obtained curable resin component varnish was applied to the release surface of a polyethylene terephthalate (PET) film (Purex A31, Teijin DuPont Film Co., Ltd., thickness: 38 μm) using a precision coating machine. The solvent was then removed by drying at 80°C for 10 minutes to create a resin layer of approximately 100 μm.

[0154] Subsequently, a varnish of the curable resin composition was applied to the resin layer using a precision coating machine, and the organic solvent was removed by drying at 80°C for 10 minutes, thereby creating a 1000 nm light-absorbing layer. This yielded a laminated film of approximately 100 μm for the temporary fixing material of Manufacturing Example 2-1.

[0155] <Preparation of Laminations (Evaluation Samples)> The temporary fixing material laminated film of Manufacturing Example 2-1 was cut to a size of 5 mm × 5 mm. Using a glass slide (size: 20 mm × 15 mm, thickness: 1 mm) as a support member and a silicon wafer (size: 8 mm × 10 mm, thickness: 750 μm) as a semiconductor member, the temporary fixing material laminated film of Manufacturing Example 2-1 was sandwiched between the silicon wafer and the glass slide in such a way that the light-absorbing layer was attached to the glass slide (configuration shown in FIG. 5A). Temporary hot pressing was performed using a hot press machine at 90°C, 5 seconds, and 1 MPa. Afterward, it was thermo-cured using an explosion-proof dryer at 150°C for 1 hour, thereby producing the laminate of Manufacturing Example 2-1.

[0156] (Manufacturing Example 2-2) The light-absorbing layer was changed to a layer containing two conductive layers (first conductive layer: titanium, second conductive layer: copper). Otherwise, the temporary fixing material laminate and laminate of Manufacturing Example 2-2 were obtained in the same manner as Manufacturing Example 2-1. Furthermore, after the light-absorbing layer was pretreated by reverse sputtering (Ar flow rate: 1.2 × 10⁻² Pa·m³ / s (70 sccm), RF power: 300 W, time: 300 seconds), RF sputtering was performed under the processing conditions shown in Table 3, and the thickness of titanium (first conductive layer) / copper (second conductive layer) was set to 50 nm / 200 nm.

[0157] [Table 3] sputtering treatment Ar flow rate electricity Process 1: Fabrication of the first conductive layer (titanium) 1.2 × 10⁻² Pa·m³ / s (70 sccm) 2000 W Process 2: Fabrication of the second conductive layer (copper) 1.2 × 10⁻² Pa·m³ / s (70 sccm) 2000 W

[0158] (Manufacturing Example 2-3) The laminate of Manufacturing Example 2-3 was manufactured in the same manner as Manufacturing Example 2-1, except that no light-absorbing layer was provided (i.e., only a resin layer was provided).

[0159] (Example 2-1, Example 2-2 and Comparative Example 2-1) <Peeling Test> A xenon lamp was used as the source of incoherent light. The laminates of Manufacturing Examples 2-1 to 2-3 were irradiated with a xenon lamp under the irradiation conditions shown in Table 4, and the peelability of the self-supporting member was evaluated. The xenon lamp used was an S2300 manufactured by Xenon Corporation (wavelength range: 270 nm to near-infrared region, irradiation energy per unit area: 17 J / cm²), and the temporary fixing material layer was irradiated via the support member (glass slide) of the laminate. The irradiation distance was the distance between the light source and the stage on which the glass slide was placed. Regarding the evaluation of the peelability test, wafers that peeled naturally from the glass slide after xenon lamp irradiation were rated "A"; wafers that could be separated without breakage when tweezers were inserted between the wafer and the glass slide were rated "B"; and wafers that could not be separated were rated "C". The results are shown in Table 4.

[0160] [Table 4] laminated body Apply voltage (V) Pulse width (μs) Irradiation distance (mm) Number of irradiations (times) Irradiation time (μs) evaluate Example 2-1a Manufacturing Example 2-1 3000 5000 10 1 5000 A Example 2-1b 3000 3000 A Example 2-2 Manufacturing Example 2-2 5000 5000 A Comparative Example 2-1 Manufacturing Example 2-3 C

[0161] Based on the comparison between Examples 2-1, 2-2 and Comparative Example 2-1, it is determined that Examples 2-1 and 2-2 are superior to Comparative Example 2-1 in terms of the peelability of the self-supporting component.

[0162] [Examples 3-1 to 3-3 and Comparative Examples 3-1 to 3-3] (Manufacturing Example 3-1) <Evaluation Sample Preparation> The temporary fixing material laminated film of Example 2-2 was cut to a size of 5 mm × 5 mm. Using a glass slide (size: 20 mm × 15 mm, thickness: 1 mm) as a support member and a silicon wafer (size: 8 mm × 10 mm, thickness: 750 μm) as a semiconductor member, the temporary fixing material laminated film of Example 2-2 was sandwiched between the silicon wafer and the glass slide in such a way that the light-absorbing layer was attached to the glass slide (as shown in FIG. 5A). Temporary heat bonding was performed using a heat press at 90°C, 5 seconds, and 1 MPa. Afterward, it was heat-cured using an explosion-proof dryer at 150°C for 1 hour, thereby producing the laminated body of Manufacturing Example 3-1.

[0163] (Manufacturing Example 3-2) The temporary fixing material laminate of Example 2-2 is sandwiched between the silicon wafer and the glass slide in such a way that the light-absorbing layer is attached to the silicon wafer (in the manner shown in FIG. 5B). Otherwise, the laminate of Example 3-2 is manufactured in the same manner as in Example 3-1.

[0164] (Manufacturing Example 3-3) On the surface of the temporary fixing material laminated film of Example 2-2 where the light-absorbing layer is not provided, a second light-absorbing layer (copper) and a first light-absorbing layer (titanium) are sequentially deposited to fabricate the temporary fixing material laminated film. Furthermore, the light-absorbing layer is fabricated in the same manner as in Example 2-2, after a pretreatment using reverse sputtering (Ar flow rate: 1.2 × 10⁻² Pa·m³ / s (70 sccm), RF power: 300 W, time: 300 seconds), and then RF sputtering is performed under the processing conditions shown in Table 3, with the titanium / copper thickness set to 50 nm / 200 nm. The temporary fixing material laminated film fabricated in this manner is sandwiched between a silicon wafer and a glass slide in the configuration shown in FIG. 5C. Otherwise, the laminated body of Example 3-3 is fabricated in the same manner as in Example 3-1.

[0165] (Examples 3-1 to 3-3) <Peeling Test> A xenon lamp was used as the source of incoherent light. The laminates of Manufacturing Examples 3-1 to 3-3 were irradiated with a xenon lamp under the irradiation conditions shown in Table 5, and the peelability of the self-supporting member was evaluated. The xenon lamp used was an S2300 manufactured by Xenon Corporation (wavelength range: 270 nm to near-infrared region, irradiation energy per unit area: 17 J / cm²), and the temporary fixing material layer was irradiated via the support member (glass slide) of the laminate. The irradiation distance was the distance between the light source and the stage on which the glass slide was placed. Regarding the evaluation of the peelability test, wafers that peeled naturally from the glass slide after xenon lamp irradiation were rated "A"; wafers that could be separated without breakage when tweezers were inserted between the wafer and the glass slide were rated "B"; and wafers that could not be separated were rated "C". The results are shown in Table 5.

[0166] [Table 5] laminated body Apply voltage (V) Pulse width (μs) Irradiation distance (mm) Number of irradiations (times) Irradiation time (μs) evaluate Example 3-1 Manufacturing Example 3-1 3000 5000 10 1 5000 A Example 3-2 Manufacturing Example 3-2 A Example 3-3 Manufacturing Example 3-3 A

[0167] (Comparative Examples 3-1 to 3-3) <Peeling Test> A YAG laser was used as the coherent light source. The laminates manufactured in Examples 3-1 to 3-3 were irradiated with the YAG laser, and the peelability of the self-supporting member was evaluated. The YAG laser used was an MD-H manufactured by Keyence Corporation (wavelength: 1064 nm, output power: 10 W, scan speed: 1000 mm / s), and the temporary fixing material layer was irradiated through the support member (glass slide) of the laminate. Regarding the evaluation of the peelability test, wafers that peeled naturally from the glass slide after YAG laser irradiation were rated "A"; wafers that could be separated without breakage when tweezers were inserted between the wafer and the glass slide were rated "B"; and wafers that could not be separated were rated "C". The results are shown in Table 6.

[0168] [Table 6] laminated body evaluate Comparative Example 3-1 Manufacturing Example 3-1 C Comparative Example 3-2 Manufacturing Example 3-2 C Comparative Example 3-3 Manufacturing Example 3-3 C

[0169] Based on the comparison between Examples 3-1 to 3-3 and Comparative Examples 3-1 to 3-3, it was determined that Examples 3-1 to 3-3, which used xenon lamps as incoherent light, were superior to Comparative Examples 3-1 to 3-3, which used YAG lasers as coherent light, in terms of stripping performance.

[0170] [Examples 4-1 to 4-6] (Manufacturing Examples 4-1 to 4-6) <Preparation of Curing Resin Components> 70 parts by weight of a hydrogenated styrene-based elastomer (trade name: FG1924, Clayton Polymer Japan Co., Ltd.) as a thermoplastic resin, 30 parts by weight of a dicyclopentadiene-type epoxy resin (trade name: HP-7200H, DIC Co., Ltd.) as an epoxy resin, and 2 parts by weight of a 1-cyanoethyl-2-phenylimidazol (trade name: Curezol 2PZ-CN, Shikoku Kasei Co., Ltd.) as a curing accelerator were mixed. Furthermore, the hydrogenated styrene-based elastomer was diluted with toluene to a solid content of 25% by weight, and the epoxy resin was diluted with toluene to a solid content of 50% by weight. The mixture was stirred at 50 rpm for 24 hours using a mixing rotor to prepare a varnish containing a curable resin component with toluene as a solvent.

[0171] <Preparation of Curable Resin Film> The obtained curable resin component varnish was applied to the release surface of a polyethylene terephthalate (PET) film (Purex A31, Teijin DuPont Film Co., Ltd., thickness: 38 μm) using a precision coating machine. The solvent was then removed by drying at 80°C for 10 minutes, thereby producing a curable resin component film (resin layer) of approximately 20 μm.

[0172] <Preparation of Laminations (Evaluation Samples)> As a supporting component, a glass slide (size: 20 mm × 15 mm, thickness: 1 mm) was prepared. A conductive layer was fabricated using a metal vapor deposition apparatus with the metal types and thicknesses shown in Table 7, and this layer was designated as the light-absorbing layer. Furthermore, in the light-absorbing layer, the supporting component, the first conductive layer, and the second conductive layer were laminated in the aforementioned order. Next, the curable resin film was cut into 50 mm × 50 mm pieces, and a silicon wafer (size: 8 mm × 10 mm, thickness: 750 μm) was prepared as a semiconductor component. The cut curable resin film was sandwiched between the light-absorbing layer and the glass slide in the configuration shown in Figure 5A, and temporary heat bonding was performed using a hot press at 90°C, 5 seconds, and 1 MPa. Afterward, heat curing was performed using an explosion-proof dryer at 150°C for 1 hour, thereby producing the laminates of Manufacturing Examples 4-1 to 4-6.

[0173] (Examples 4-1 to 4-6) <Peeling Test> A xenon lamp was used as the source of incoherent light. The laminates of Manufacturing Examples 4-1 to 4-6 were irradiated with a xenon lamp under the irradiation conditions shown in Table 7, and the peelability of the self-supporting member was evaluated. The xenon lamp used was an S2300 manufactured by Xenon Corporation (wavelength range: 270 nm to near-infrared region, irradiation energy per unit area: 17 J / cm²), and the temporary fixing material layer was irradiated via the support member (glass slide) of the laminate. The irradiation distance was the distance between the light source and the stage on which the glass slide was placed. Regarding the evaluation of the peelability test, those in which the silicon wafer peeled naturally from the glass slide after xenon lamp irradiation were rated "A"; those in which separation could be achieved without damage to the silicon wafer when tweezers were inserted between the silicon wafer and the glass slide were rated "B"; and those in which separation could not be achieved were rated "C". The results are shown in Table 7.

[0174] [Table 7] laminated body The light-absorbing layer of the laminate (two conductive layers) Apply voltage (V) Pulse width (μs) Irradiation distance (mm) Number of irradiations (times) Irradiation time (μs) evaluate First conductor layer Second conductor layer type Thickness (nm) type Thickness (nm) Example 4-1a Manufacturing Example 4-1 Ti 50 Cu 200 2800 1000 10 1 1000 B Example 4-1b 3000 A Example 4-2a Manufacturing Example 4-2 100 2800 B Example 4-2b 3000 A Example 4-3a Manufacturing Example 4-3 50 2800 A Example 4-3b 3000 A Example 4-4 Manufacturing Example 4-4 Al 200 3000 B Examples 4-5 Manufacturing Examples 4-5 Ag 200 3000 B laminated body The light-absorbing layer of a laminate (a single-layer conductive layer) Apply voltage (V) Pulse width (μs) Irradiation distance (mm) Number of irradiations (times) Irradiation time (μs) evaluate type Thickness (nm) Examples 4-6 Manufacturing Examples 4-6 Cu 50 3000 1000 10 1 1000 B

[0175] It was determined that Examples 4-1 to 4-6 are all excellent in terms of the peelability of the self-supporting components.

[0176] [Examples 5-1 to Examples 5-7] (Manufacturing Examples 5-1 to 5-7) <Preparation of Curing Resin Components> 70 parts by weight of a hydrogenated styrene-based elastomer (trade name: FG1924, Clayton Polymer Japan Co., Ltd.) as a thermoplastic resin, 30 parts by weight of a dicyclopentadiene-type epoxy resin (trade name: HP-7200H, DIC Co., Ltd.) as an epoxy resin, and 2 parts by weight of a 1-cyanoethyl-2-phenylimidazol (trade name: Curezol 2PZ-CN, Shikoku Kasei Co., Ltd.) as a curing accelerator were mixed. Furthermore, the hydrogenated styrene-based elastomer was diluted with toluene to a solid content of 25% by weight, and the epoxy resin was diluted with toluene to a solid content of 50% by weight. The mixture was stirred at 50 rpm for 24 hours using a mixing rotor to prepare a varnish containing a curable resin component with toluene as a solvent.

[0177] <Preparation of Curable Resin Film> The obtained curable resin component varnish was applied to the release surface of a polyethylene terephthalate (PET) film (Purex A31, Teijin DuPont Film Co., Ltd., thickness: 38 μm) using a precision coating machine. The solvent was then removed by drying at 80°C for 10 minutes, thereby producing a curable resin component film (resin layer) of approximately 20 μm.

[0178] <Preparation of Laminations (Evaluation Samples)> As a support component, a glass slide (size: 20 mm × 15 mm, thickness: 1 mm) was prepared. A conductive layer was fabricated by sputtering using the metal types and thicknesses shown in Table 8, and this layer was used as a light-absorbing layer. Furthermore, similar to Examples 2-2, this light-absorbing layer underwent RF sputtering under the processing conditions shown in Table 3 after a pretreatment using reverse sputtering (Ar flow rate: 1.2 × 10⁻² Pa·m³ / s (70 sccm), RF power: 300 W, time: 300 seconds). In the light-absorbing layer having two conductive layers, the support component, the first conductive layer, and the second conductive layer were deposited in the aforementioned order. Subsequently, the curable resin film was cut into 50 mm × 50 mm pieces, and a silicon wafer (size: 8 mm × 10 mm, thickness: 750 μm) was prepared as a semiconductor component. The cut-out curable resin film was sandwiched between the light-absorbing layer and the glass slide in the manner shown in Figure 5A, and temporarily heat-pressed at 90°C for 5 seconds and 1 MPa using a hot press machine. Then, it was heat-cured at 150°C for 1 hour using an explosion-proof dryer, thereby producing the laminates of Manufacturing Examples 5-1 to 5-7.

[0179] (Examples 5-1 to 5-7) <Peeling Test> A xenon lamp was used as the source of incoherent light. The laminates of Manufacturing Examples 5-1 to 5-7 were irradiated with a xenon lamp under the irradiation conditions shown in Table 8, and the peelability of the self-supporting member was evaluated. The xenon lamp used was an S2300 manufactured by Xenon Corporation (wavelength range: 270 nm to near-infrared region, irradiation energy per unit area: 17 J / cm²), and the temporary fixing material layer was irradiated via the support member (glass slide) of the laminate. The irradiation distance was the distance between the light source and the stage on which the glass slide was placed. Regarding the evaluation of the peelability test, those in which the silicon wafer peeled naturally from the glass slide after xenon lamp irradiation were rated "A"; those in which separation could be achieved without damage to the silicon wafer when tweezers were inserted between the silicon wafer and the glass slide were rated "B"; and those in which separation could not be achieved were rated "C". The results are shown in Table 8.

[0180] [Table 8] laminated body The light-absorbing layer of the laminate (two conductive layers) Apply voltage (V) Pulse width (μs) Irradiation distance (mm) Number of irradiations (times) Irradiation time (μs) evaluate First conductor layer Second conductor layer type Thickness (nm) type Thickness (nm) Example 5-1a Manufacturing Example 5-1 Ti 50 Cu 200 More than 4000 200 50 1 200 A Example 5-1b 3800 B Example 5-1c 3700 B Example 5-2a Manufacturing Example 5-2 Al 200 More than 4000 A Example 5-2b 3800 A Example 5-2c 3700 B Example 5-3a Manufacturing Example 5-3 Ag 200 More than 4000 A Example 5-3b 3800 B Example 5-4a Manufacturing Example 5-4 Au 200 More than 4000 B Example 5-4b 3800 B Example 5-5a Manufacturing Example 5-5 Pt 200 More than 4000 B Example 5-5b 3800 B laminated body The light-absorbing layer of a laminate (a single-layer conductive layer) Apply voltage (V) Pulse width (μs) Irradiation distance (mm) Number of irradiations (times) Irradiation time (μs) evaluate type Thickness (nm) Examples 5-6 Manufacturing Examples 5-6 Ti 200 More than 4000 200 50 1 200 B Examples 5-7 Manufacturing Examples 5-7 Cu 200 More than 4000 B

[0181] It was determined that Examples 5-1 to 5-7 are all excellent in terms of the peelability of the self-supporting components.

[0182] Based on the above results, it is confirmed that the manufacturing method of the semiconductor device of the present invention can easily separate the temporarily fixed semiconductor component from the self-supporting component.

[0183] 10: Supporting components 20: Temporary fixing material precursor layer 20c: Temporary fixing layer 20c': Residual material layer of temporary fixing 22: Conductive particles 24: Curing resin components 24c: Cured products of curing resin components 30: Temporary fixing material precursor layer 30c: Temporary fixing layer 30c': Residue of temporary fixing material layer 32: Light Absorption Layer 34: Resin layer 34c: Resin-cured layer 40: Semiconductor components 41: Wiring layer 42: Fabrication of semiconductor components 44: Through electrode 50: Sealing layer 60: Semiconductor components 100, 200, 210, 220, 230, 300, 310, 320, 330: Laminar volumes A: direction

Claims

1. A method for manufacturing a semiconductor device, comprising: The steps of preparing a temporary fixation laminate, the temporary fixation laminate including a support member and a temporary fixation material precursor layer, the temporary fixation material precursor layer having, sequentially from the support member side: a conductive layer containing a conductive material that absorbs light and generates heat, and a resin layer containing a curable resin component, wherein the conductive material contains at least one selected from the group consisting of chromium, titanium, copper, aluminum, silver, gold, and platinum; a step of disposing a semiconductor component on the support member via the temporary fixation material precursor layer of the temporary fixation laminate; a step of curing the curable resin component in the temporary fixation material precursor layer to produce a laminate having, sequentially stacked, the support member, the conductive layer, a temporary fixation material layer having a resin-cured layer, and the semiconductor component, wherein the resin-cured layer contains a cured form of the curable resin component; and a step of irradiating the temporary fixation material layer in the laminate with incoherent light to separate the semiconductor component from the support member, wherein the incoherent light includes at least infrared light, and the light source of the incoherent light is a xenon lamp.

2. A method for manufacturing a semiconductor device as claimed in claim 1, wherein in the step of preparing the temporary fixing laminate, the resin layer contains an uncured curable resin component, and the step of manufacturing the laminate is a step of curing the uncured curable resin component in the resin layer.

Images