Thermal choke plate

Abstract

An exemplary thermal barrier plate used in a substrate processing system may include a plate defining a first hole through the plate and a second hole through the plate. The second hole may be laterally offset from the first hole. The plate may include a flange defining a purge inlet. The plate may include edges defining a plurality of purge outlets, which are fluidly coupled to the purge inlet. Each of the plurality of purge outlets may be fluidly coupled to the first hole.

Description

heat shield This technology relates to semiconductor processing equipment. More specifically, this technology relates to semiconductor chamber components and substrate processing methods. This application claims the benefit and priority of U.S. Patent Application No. 18 / 076,234, entitled "THERMAL CHOKE PLATE," filed on December 6, 2022, the entire contents of which are incorporated herein by reference. Temperature non-uniformity across the substrate during substrate processing can result in an uneven and inconsistent substrate. This non-uniformity can occur when the panel, opposite the base of the supporting substrate, undergoes sublimation along its surface. This sublimation can lead to temperature non-uniformity across the substrate during processing. To avoid this sublimation, it is beneficial to ensure proper panel cleaning during substrate processing. However, the flow rates required for panel cleaning using conventional substrate processing system designs are insufficient to prevent panel sublimation. Therefore, optimizing semiconductor processing equipment to clean up substrate processing areas at high altitudes would be beneficial. Furthermore, contaminants within the semiconductor substrate can adversely affect its performance and quality. Therefore, the substrate processing environment involves minimizing the risk of contaminants entering the substrate during processing; these contaminants can be generated by components of the semiconductor processing equipment itself. For example, stainless steel components can react with purge gases (such as nitrogen trifluoride) to form metallic contaminants during corrosion, which can penetrate the substrate during processing. While coatings may be applied to these stainless steel components to help protect the stainless steel from reaction with purge gases, at sufficiently high temperatures (e.g., the temperature at which the substrate is processed, such as 400°C), such coatings may peel off, exposing the stainless steel to oxidation and corrosion. This heat can further exacerbate this problem by increasing the rate of oxidation and corrosion of the exposed stainless steel components, thereby further increasing the risk of contaminants entering the substrate processing environment. Therefore, minimizing the risk of stainless steel components reacting with purified gases in the substrate processing environment to form contaminants would be particularly beneficial. An exemplary thermal barrier plate for use in a substrate processing system may include a plate defining a first hole through the plate and a second hole through the plate. The second hole may be laterally offset from the first hole. The plate may include a flange defining a purge inlet. The plate may include edges defining a plurality of purge outlets, which are fluidly coupled to the purge inlet. Each of the plurality of purge outlets may be fluidly coupled to the first hole. In some embodiments, a purification inlet may be defined along the top surface of a flange. A purification inlet may be defined along the bottom surface of a flange. An edge may at least partially define a first air chamber, a second air chamber, and at least one baffle extending between and fluidly coupled to the first and second air chambers. The first and second air chambers and the baffle may be in fluid communication with the purification inlet and a plurality of purification outlets. At least one baffle may include a plurality of baffles. The plurality of baffles may include a first baffle and a second baffle. The first baffle may have a different cross-sectional area than the second baffle. The first baffle may be closer to the purification inlet than the second baffle. The first baffle may have a smaller cross-sectional area than the second baffle. A heat-insulating plate may include a sealing plate. The sealing plate may be engaged with an edge to define the first and second air chambers and the baffle therebetween. Some embodiments of this technology may cover a substrate processing system. The system may include a chamber body defining a transfer area. The system may include a substrate support disposed within the transfer area. The system may include a cover plate located on the chamber body. The cover plate may define an opening through the cover plate. The system may include a heat shield located on the cover plate along a first surface of the heat shield plate. The heat shield plate may define a first opening through the plate and a second opening through the plate. The second opening may be laterally offset from the first opening. The heat shield plate may include a flange defining a purification inlet. The heat shield plate may include edges defining a plurality of purification outlets fluidly coupled to the purification inlet. Each of the plurality of purification outlets may be fluidly coupled to the first opening. The system may include a pumping liner located on the heat shield plate. The system may include a panel located on the pumping liner. In some embodiments, the chamber body may define a channel communicating with a purification inlet to form part of a treatment purification flow path. The system may include a bellows coupled to the underside of a substrate support. The bellows may include a flange on which an RF washer is disposed, the RF washer aligned along a vertical axis with the edge of a heat shield. The substrate support may be vertically translatable within a transfer region between a transfer position and a processing position. In the processing position, the bellows may expand and the RF washer may contact the edge of the heat shield to close the RF return path. In the transfer position, the bellows may contract and the RF washer may be perpendicularly spaced from the edge of the heat shield. The edge of the heat shield may have a length between approximately 70 mm and 100 mm. Some embodiments of this technology may cover substrate processing systems, which may include a chamber body defining a transfer area. The system may include a substrate support disposed within the transfer area. The substrate support may include a ground plane. The substrate support may include a first isolator located on top of the ground plane. The substrate support may include a second isolator located on top of the first isolator. A top isolator may define a first set of recesses extending from the surface of a first isolator, and a second isolator may define a second set of recesses extending from the surface of a second isolator. The height of each of the first and second sets of recesses may be equal. The height of each of the first set of recesses may differ from the height of the second set of recesses. The surface of the first isolator may be a top surface, and the first set of recesses may extend from the top surface. The surface of the second isolator may be a bottom surface, and the second set of recesses may extend from the bottom surface. The first isolator may define a third set of recesses extending from the bottom surface of the first isolator. The system may include an external isolator located on at least a portion of the first isolator. The top isolator may define a wedge-shaped portion. The external isolator may include a flange located on top of the wedge-shaped portion. Substrate processing can include time-intensive operations for adding, removing, or otherwise modifying material on wafers or semiconductor substrates. Efficient substrate movement reduces queuing time and increases substrate throughput. To increase the number of substrates processed within a clustering tool, additional chambers can be incorporated into the host unit. While this can be achieved by continuously adding transfer robots and processing chambers by lengthening the tool, it can become space-inefficient as the footprint of the clustering tool increases. Therefore, this technology can include clustering tools with an increased number of processing chambers within a defined footprint. To accommodate the limited footprint around the transfer robot, this technology can laterally increase the number of processing chambers outward from the robot. For example, some conventional clustering tools may include one or two processing chambers positioned around a centrally located section of the transfer robot to maximize the number of chambers radially around the robot. This technology can extend this concept by laterally incorporating additional chambers as another column or group of chambers. For example, this technology can be applied to cluster tools comprising three, four, five, six, or more processing chambers that can be accessed at each of one or more robot access locations. However, due to the addition of extra processing locations, access to and from these locations from a central robot may no longer be feasible without additional transfer capability at each location. Some prior art techniques may include wafer carriers on which the substrate remains during transition. However, wafer carriers can cause thermal inhomogeneities and particulate contamination on the substrate. This technology overcomes these problems by incorporating transfer sections perpendicularly aligned to the processing chamber area and a turntable or transfer device that can operate in conjunction with a central robot to access and exit additional wafer locations. Furthermore, conventional panels may undergo sublimation, which can lead to temperature uniformity issues across the panels. To mitigate these problems, conventional systems incorporate purge gas introduced into the chamber from the bottom. However, this purge gas design has several drawbacks. For example, bottom purge can introduce metal contamination onto the wafer because the purge gas can damage oxidized portions of stainless steel chamber components, including the ground plane at the base. Additionally, in multi-chamber systems sharing a single transfer volume (but each chamber has a separate processing / reaction volume), introducing purge gas from the bottom of the chamber (e.g., within the shared transfer volume) can result in a large temperature difference between the volume and the reactor volume. Conventional chambers may also have small diffusion volumes, which may require purge gas at higher flow rates to adequately purge the chamber. This technology addresses these issues by providing heat shields that introduce purge gas into the reaction volume within the chamber. This helps reduce the pressure difference between the reaction volume and the transfer volume, as well as the volume of purge gas required for the purge chamber. Introducing purge gas into the reaction volume also improves temperature uniformity during thermal leveling of the substrate. Increasing the height of the heat shields can also provide a longer and more uniform diffusion surface alongside the substrate and help prevent panel sublimation. Embodiments may utilize multi-piece isolators to help thermally insulate the ground plane from the high-temperature surface of the substrate near the substrate support surface. While the remainder of the disclosure will conventionally identify specific structures, such as four-position transfer regions, from which the structures and methods of the present invention can be employed, it will be readily understood that the systems and methods are equally applicable to any number of structures and devices that may benefit from the transfer capabilities explained. Therefore, the technology should not be considered so limited to use alone with any particular structure. Furthermore, although exemplary tool systems are described as providing the basis for this technology, it will be understood that the technology can be incorporated with any number of semiconductor processing chambers and tools that may benefit from some or all of the operations and systems described. While the remainder of the disclosure will conventionally identify specific structures that can employ the structures and methods of the present invention, such as four-position transfer regions, it will be readily understood that the panels or components discussed can also be employed in any number of other systems or chambers, and any other devices in which multiple components can be coupled or coupled. Therefore, the technology should not be considered so limited to use alone with any particular chamber. Furthermore, although exemplary tool systems are described as the basis for providing this technology, it will be understood that the technology can be combined with any number of semiconductor processing chambers and tools that can benefit from incorporating some or all of the described operations and systems. Figure 1A illustrates a top plan view of one embodiment of a substrate processing tool or system 100 with deposition, etching, baking, and curing chambers according to some embodiments of the present technology. In the figure, a set of front-opening wafer transfer cassettes 102 supplies substrates of various sizes, which are received within a fab interface 103 by robotic arms 104a and 104b and placed in a loading gate or low-pressure holding region 106 before being delivered to one of the substrate processing regions 108 located in a chamber system or block section 109a-109c. Each of these chamber systems or block sections may be a substrate processing system having a transfer region fluidly coupled to a plurality of processing regions 108. Although a block system is illustrated, it will be understood that the present technology also encompasses platforms incorporating freestanding chambers, dual-chamber systems, and other multiple chamber systems. A second robotic arm 110, housed in a transfer chamber 112, can be used to transport a substrate wafer from the holding region 106 to the block section 109 and back, and the second robotic arm 110 can be housed in the transfer chamber, which can be connected to the block section or each of the processing systems. Each substrate processing region 108 can be assembled to perform a variety of substrate processing operations, including any number of deposition processes, including cyclic layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, and etching, pre-cleaning, annealing, plasma treatment, degassing, orientation, and other substrate processes. Each block segment 109 may include a transfer area that receives and delivers a substrate from and to a second robotic arm 110. The transfer area of ​​a chamber system may be aligned with a transfer chamber having the second robotic arm 110. In some embodiments, the transfer area may be laterally accessed by a robot. In subsequent operations, components of the transfer segment may vertically translate the substrate into the overlay processing area 108. Similarly, the transfer area may also be operable to rotate the substrate between positions within each transfer area. The substrate processing area 108 may include any number of system components for depositing, annealing, curing, and / or etching a film of material on a substrate or wafer. In one configuration, two sets of processing areas (such as the processing areas in block segments 109a and 109b) may be used to deposit material on the substrate, and a third set of processing chambers (such as the processing chambers or areas in block segment 109c) may be used to cure, anneal, or process the deposited film. In another configuration, all three sets of chambers (such as all twelve chambers shown) can be configured to deposit and / or cure films on a substrate. As illustrated, the second robotic arm 110 may include two arms for simultaneously delivering and / or retrieving multiple substrates. For example, each block segment 109 may include two inlets 107 along the surface of the housing of the transfer area, which may be laterally aligned with the second robotic arm. The inlets may be defined along a surface adjacent to the transfer chamber 112. In some embodiments, as illustrated, a first inlet may be aligned with a first substrate support among a plurality of substrate supports in the block segment. Furthermore, a second inlet may be aligned with a second substrate support among a plurality of substrate supports in the block segment. The first substrate support may be adjacent to the second substrate support, and in some embodiments, the two substrate supports may define a first column of substrate supports. As illustrated in the illustrated configuration, the second column of substrate supports may be positioned laterally outward from the transfer chamber 112 behind the first column of substrate supports. The two arms of the second robotic arm 110 may be spaced apart to allow both arms to simultaneously enter the block segment or chamber system to deliver or retrieve one or two substrates to substrate supports within the transfer area. Any one or more transfer regions described may be combined with additional chambers separate from the manufacturing systems illustrated in different embodiments. It will be understood that processing system 100 is intended for additional configurations of chambers for material film deposition, etching, annealing, and curing. Furthermore, any number of other processing systems may be utilized in conjunction with this technology, which may be combined with a transfer system for performing any particular operation, such as substrate movement. In some embodiments, a processing system that provides entrances and exits to multiple processing chamber regions while simultaneously maintaining a vacuum environment in each segment (such as the holding and transfer regions) allows operations to be performed in multiple chambers while maintaining a specific vacuum environment between discrete processes. Figure 1B illustrates a schematic cross-sectional elevation view of one embodiment of an exemplary processing tool (such as, through a chamber system) according to some embodiments of the present technology. Figure 1B may depict a cross-sectional view through any two adjacent processing regions 108 of any block segment 109. The elevation view may depict the configuration or fluid coupling of one or more processing regions 108 with a transfer region 120. For example, a continuous transfer region 120 may be defined by a transfer region housing 125. The housing may define an open internal volume in which a plurality of substrate supports 130 may be housed. For example, as illustrated in Figure 1A, an exemplary processing system may include four or more (including a plurality of) substrate supports 130 distributed within a housing surrounding the transfer region. The substrate supports may be bases as illustrated, although many other configurations may also be used. In some embodiments, the base may be vertically translatable between the transfer region 120 and the processing region overlying the transfer region. The substrate supports may be vertically translatable along a path between a first position and a second position within the chamber system along the central axis of the substrate support. Thus, in some embodiments, each substrate support 130 may be axially aligned with an overlay processing area 108 defined by one or more chamber components. An open transfer area provides the ability of a transfer device 135 (such as a turntable) to engage and move substrates between various substrate supports (e.g., in a rotatable manner). The transfer device 135 can rotate around a central axis. This allows the substrates to be positioned for processing within any of the processing areas 108 within the processing system. The transfer device 135 may include one or more end effectors that can engage the substrates from above, below, or with the outer edges of the substrates to move around the substrate supports. The transfer device may receive substrates from a transfer chamber robot (such as the previously described robot 110). The transfer device may then rotate the substrates to alternate the substrate supports, facilitating the delivery of additional substrates. Once positioned and awaiting processing, the transfer device can position the end effector or arm between the substrate supports, allowing the substrate supports to rise through the transfer device 135 and deliver the substrate into processing areas 108, which may be perpendicularly offset from the transfer areas. For example, and as illustrated, substrate support 130a may deliver the substrate into processing area 108a, and substrate support 130b may deliver the substrate into processing area 108b. This may occur with other substrate supports and processing areas, as well as additional substrate supports and processing areas in embodiments that include additional processing areas. In this configuration, when operatively engaged for processing a substrate (e.g., in a second position), the substrate supports may define the processing areas 108 at least partially from below, and the processing areas may be axially aligned with the associated substrate supports. The processing areas may be defined from above by panel 140 and other cover stack components. In some embodiments, each processing area may have an individual cover stack component, although in some embodiments the components may accommodate multiple processing areas 108. Based on this configuration, in some embodiments, each processing region 108 may be fluidly coupled to a transfer region while being fluidly isolated from above from each other processing region within the chamber system or block segment. In some embodiments, panel 140 may operate as an electrode of the system for generating localized plasma within processing region 108. As illustrated, each processing region may utilize or incorporate separate panels. For example, panel 140a may be included to define processing region 108a from above, and panel 140b may be included to define processing region 108b from above. In some embodiments, a substrate support may operate as an accompanying electrode for generating capacitively coupled plasma between the panel and the substrate support. In some embodiments, the panel may be heated by a heater 142 extending around the panel. Depending on the volume geometry, pumping liner 145 may define processing region 108 at least partially radially or laterally. Furthermore, a separate pumping liner may be used for each processing region. For example, pumping liner 145a may define processing region 108a at least partially radially, and pumping liner 145b may define processing region 108b at least partially radially. A pumping liner 145 may be located on a heat shield 147, which controls heat distribution from the cover stack to the cooling chamber body. In an embodiment, a baffle 150 may be positioned between the cover 155 and the panel 140, and furthermore, individual baffles may be included to facilitate fluid distribution within each processing area. For example, a baffle 150a may be included for distribution toward processing area 108a, and a baffle 150b may be included for distribution toward processing area 108b. The cover 155 may be a separate component for each processing area, or may include one or more common types. In some embodiments, the cover 155 may be one of two separate covers for the system. For example, a first cover 158 may be located on top of the transfer area housing 125. The transfer area housing may define an open volume, and the first cover 158 may include a plurality of holes through which the overlying volume is divided into specific processing areas. In some embodiments, as illustrated, the cover 155 may be a second cover and may be a single component defining a plurality of holes 160 for fluid delivery to individual processing areas. For example, the cover 155 may define a first hole 160a for fluid delivery to processing area 108a, and the cover 155 may define a second hole 160b for fluid delivery to processing area 108b. When included, additional holes may be defined for additional processing areas within each segment. In some embodiments, each block segment 109 or a multi-processing region segment accommodating more than or fewer than four substrates may include one or more distal plasma units 165 for delivering plasma effluent to a processing chamber. In some embodiments, individual plasma units may be combined for each chamber processing region, although fewer distal plasma units may be used in some embodiments. For example, as illustrated, a single distal plasma unit 165 may be used for multiple chambers, such as two, three, four, or more chambers up to all chambers for a particular block segment. In embodiments of the art, conduits may extend from the distal plasma unit 165 to each orifice 160 for delivering plasma effluent for processing or cleaning. In some embodiments, the purification channel 170 may extend through the transfer area housing near or adjacent to each substrate support 130. For example, a plurality of purification channels may extend through the transfer area housing to provide fluid inlets and outlets for delivering fluid-coupled purified gas into the transfer area. The number of purification channels may be the same or different, including more or fewer than the number of substrate supports within the processing system. For example, the purification channel 170 may extend through the transfer area housing beneath each substrate support. With the two substrate supports 130 illustrated, a first purification channel 170a may extend through the housing near substrate support 130a, and a second purification channel 170b may extend through the housing near substrate support 130b. It will be understood that any additional substrate support may similarly have a plumbed purification channel extending through the transfer area housing to provide purified gas into the transfer area. As the purified gas is delivered through one or more of the purification channels, it can be similarly discharged via pumping liners 145, which provide all discharge paths for the self-treatment system. Therefore, in some embodiments, both the treatment precursor and the purified gas can be discharged via pumping liners. The purified gas can flow upwards to the associated pumping liner; for example, purified gas flowing through purification channel 170b can be discharged from the self-treatment system via pumping liner 145b. As mentioned, processing system 100, or more specifically, a block segment or chamber system incorporated with processing system 100 or other processing systems, may include a transfer segment positioned below the illustrated processing chamber region. Figure 2 illustrates a schematic isometric view of a transfer segment of an exemplary chamber system 200 according to some embodiments of the present technology. Figure 2 may illustrate additional features or variations of the transfer region 120 described above, and may include any of the described components or characteristics. The illustrated system may include a transfer region housing 205 defining a transfer region in which a plurality of components may be included. The transfer region may be additionally defined from above by a processing chamber or processing region (such as processing chamber region 108 illustrated in block segment 109 of Figure 1A) that is at least partially fluidly coupled to the transfer region. The sidewalls of the transfer region housing may define one or more inlet / outlet locations 207 through which substrates may be delivered and picked up, for example, by a second robotic arm 110 as discussed above. In some embodiments, the inlet / outlet location 207 may be a slit valve or other sealable inlet / outlet location, which includes a door or other sealing mechanism to provide a closed environment within the transfer area housing 205. Although illustrated with two such inlet / outlet locations 207, it will be understood that in some embodiments, only a single inlet / outlet location 207 may be included, as well as inlet / outlet locations on multiple sides of the transfer area housing. It will also be understood that the size of the illustrated transfer section may be determined to accommodate any substrate size, including substrates of 200 mm, 300 mm, 450 mm, or larger or smaller, including substrates characterized by any number of geometries or shapes. A plurality of substrate supports 210 positioned around the volume of the transfer area may be located within the transfer area housing 205. Although four substrate supports are illustrated, it will be understood that embodiments of the present invention similarly encompass any number of substrate supports. For example, according to embodiments of the present invention, more than or about three, four, five, six, eight, or more substrate supports 210 may be accommodated in the transfer area. A second robotic arm 110 may deliver substrates to either or both of substrate supports 210a or 210b via inlet / outlet 207. Similarly, the second robotic arm 110 may pick up substrates from these locations. A lifting pin 212 may protrude from the substrate support 210 and allow the robot to enter under the substrate. The lifting pin may be fixed to the substrate support, or fixed at a location where the substrate support may be recessed downwards, or in some embodiments, the lifting pin may additionally be raised or lowered via the substrate support. The substrate support 210 can be translated vertically and, in some embodiments, can extend to the processing chamber region of the substrate processing system, such as processing chamber region 108, located above the transfer area housing 205. The transfer area housing 205 may provide an entrance / exit 215 for alignment systems, which may include an aligner extending through an aperture as illustrated in the transfer area housing, and may be operated in conjunction with a laser, camera, or other monitoring device that protrudes or transmits through adjacent apertures and can determine whether the translated substrate is correctly aligned. The transfer area housing 205 may also include a transfer device 220, which may operate in various ways to position substrates and move substrates between various substrate supports. In one example, the transfer device 220 may move substrates on substrate supports 210a and 210b to substrate supports 210c and 210d, allowing additional substrates to be delivered into the transfer chamber. Additional transfer operations may include rotating substrates between substrate supports for additional processing in the overlay processing area. The transfer device 220 may include a central hub 225, which may include one or more shafts extending into the transfer chamber. An end effector 235 may be coupled to a shaft. The end effector 235 may include a plurality of arms 237 extending radially or laterally outward from the central hub. Although the arms are illustrated from their central bodies, in various embodiments, the end effector may additionally include separate arms, each coupled to a shaft or the central hub. Any number of arms may be included in embodiments of the art. In some embodiments, the number of arms 237 may be similar to or equal to the number of substrate supports 210 included in the chamber. Thus, as illustrated, for four substrate supports, the transfer device 220 may include four arms extending from the end effector. These arms may be characterized by any number of shapes and profiles, such as straight or curved profiles, and including any number of distal profiles, including hooks, loops, forks, or other designs for supporting substrates and / or providing access points to substrates, such as for alignment or engagement. End effector 235, or a component or portion thereof, may be used to contact the substrate during transfer or movement. These components and end effectors may be made of or comprise a variety of materials, including conductive and / or insulating materials. In some embodiments, the materials may be coated or plated to withstand contact with precursors or other chemicals that may be transferred from the overlying processing chamber to the transfer chamber. In addition, materials may be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, the substrate support is operable to heat a substrate disposed on the support. The substrate support may be configured to increase the surface or substrate temperature to a temperature greater than or about 100°C, greater than or about 200°C, greater than or about 300°C, greater than or about 400°C, greater than or about 500°C, greater than or about 600°C, greater than or about 700°C, greater than or about 800°C, or higher. Any of these temperatures may be maintained during operation, and therefore components of the transfer device 220 may be exposed to any of these said or covered temperatures. Therefore, in some embodiments, any of these materials may be selected to accommodate these temperature schemes, and materials such as ceramics and metals may be included, which may be characterized by a relatively low coefficient of thermal expansion or other beneficial properties. The component coupling can also be adapted for operation in high-temperature and / or corrosive environments. For example, where the end effector and the end portion are each ceramic, the coupling may include press-fit fittings, snap-fit ​​fittings, or other fittings that may not include additional materials, such as bolts, which may expand and contract with temperature and could cause breakage in the ceramic. In some embodiments, the end portion may be continuous with the end effector and may be integrally formed with the end effector. Any number of other materials that can facilitate operation or reduce resistance during operation can be used, and the present technology similarly covers such materials. Figure 3 illustrates a cross-sectional view of an exemplary substrate processing system 300 according to some embodiments of the present technology. Figure 3 may illustrate further details regarding components in system 100, such as for heat shield 147. In some embodiments, system 300 is understood to include any features or configurations of system 100 previously discussed. System 300 can be used to perform semiconductor processing operations, including depositing hard masking materials as previously described, as well as other deposition, removal, and cleaning operations. Specifically, substrate processing system 300 may include a transfer area housing (or chamber body) 330, an external isolator 510, a top (or first) isolator 520, a bottom (or second) isolator 530, a base 310, a heat shield 400, a lower cover 350, an upper cover 360, a panel 340, a pumping liner 370, a ground plane 380, and / or a bellows 600 (and other components). The chamber body 330 defines a transfer area (or chamber volume) 331 therein for accommodating the various components of the substrate processing system 300 during use. Specifically, the chamber body 330 can accommodate the base 310, ground plane 380, and isolators 510, 520, and 530 when the base 310, ground plane 380, and isolators 510, 520, and 530 are vertically translated into the processing area, as further discussed below. A base or substrate support 310 may be disposed within the chamber body 330. The base support 310 may be vertically translatable within the chamber body 330 between a transfer area and a processing area. The substrate support 310 may include a support plate, which may include a heater, an isolator, and / or a ground plane 380. The substrate support 310 may also include a shaft extending through the bottom of the chamber body 330. The substrate support 310 may be translatable within the chamber body 330 between a lower transfer area (illustrated herein) and an upper processing area. During processing operations, the substrate support 310 moves upward within the chamber body 330 to a processing position within the processing area. Once deposition and / or other processing operations are completed, the substrate support 310 may be lowered to a transfer position within the transfer area. A processed substrate may be removed from the substrate support 310, and a new substrate may be positioned on top of the substrate support 310. The stacking of components on the chamber body 330 defines a processing region 301 covering the chamber volume 331. For example, the top boundary of the processing region 301 may be defined by the bottom surface of the panel 340, the lower boundary of the processing region 301 may be defined by the base 310, and the lateral boundary of the processing region 310 may be defined by the inner surfaces of the lower cover 350, the upper cover 360, the pumping liner 370, and / or the heat shield 400. The lower cover 350 may be located on top of the chamber body 330 (directly or indirectly). A heat shield 400 may be located on the upper surface of the lower cover 350. The heat shield 400 may also be located on the lower cover 350 on a first surface of the heat shield 400. The heat shield 400 may define a first orifice axially aligned with the processing chamber and base 310. The heat shield 400 may also define a second orifice axially aligned with a discharge lumen and / or a pumping liner 370 formed in the chamber body 330, the discharge lumen forming part of a discharge channel to extract gas from the processing area 301. As illustrated, the heat shield 400 may include an edge 410 defining the first orifice through which the heat shield 400 extends. The edge 410 may extend along a sidewall of the lower cover 350. In some embodiments, a gap may be maintained between the edge 410 and the cover to control heat flow between components. The edge 410 may extend perpendicularly from the first surface of the heat shield 400 in a direction toward the lower cover 350 and may form a protrusion from the heat shield 400. The heat shield 400 may also include a flange 420 extending laterally outward from edge 410. For example, in some embodiments, the flange 420 may extend outward from the outer surface of edge 410 and may be located on top of the lower cover 350. In certain embodiments, the flange 420 and edge 410 may share a single first surface, such that the flange 420 is positioned at the top of the heat shield 400, although other positions of the flange 420 relative to edge 410 are possible. Edge 410 may include a distal end 401. The distal end 401 may be the lowest end of the heat shield 400, such that when the heat shield 400 is assembled in the substrate processing system 300, the distal end 401 is the farthest portion of the heat shield 400 extending into the chamber volume 331. The upper cover 360 and the pumping liner 370 may be located on top of the heat shield 400, such as on top of the first surface of the heat shield 400. The upper cover 360 may have a shorter top edge than the top edge of the pumping liner 370, such that a vertical slit 361 exists between the upper cover 360 and the pumping liner 370. The vertical slit 361 allows one or more gases to be discharged from the processing region 301 through an outlet 371a, 371b defined in the surface of the pumping liner 370. The gases discharged through the pumping liner 370 may pass through orifices defined by the heat shield 400 and the chamber body 630, which are radially outward from the processing region. The inner surfaces 417 of the upper cover 360 and the inner surfaces of the heat shield 400 can be aligned flush with each other, such that the inner surfaces define a substantially uniform diffusion surface. For example, the inner surfaces can have substantially the same circumference and be concentric to define a smooth surface. This smooth surface allows the purifying gas to flow along it without interference, thus allowing the purifying gas to diffuse more uniformly and consistently to the panel 340. This increased uniformity and consistency, in turn, allows for a reduction in the flow rate of the purifying gas to purify the panel 340 and prevent sublimation. Similarly, the outer surfaces 311 of the base 310 and 511 of the external isolator can be aligned flush with each other, such that the outer surfaces 311 and 511 define a substantially smooth and uniform diffusion surface between the base 310 and the chamber wall. For example, the outer surfaces 311 and 511 can have substantially the same circumference and be concentric to define a smooth surface. This smooth surface achieves a result similar to that described above for the uniform surface of the inner surfaces. Thus, the smooth surfaces of the inner and outer surfaces 311 and 511 define a portion of the purification flow path, which is substantially free of interfering protrusions that inhibit the flow of the purification gas. The purification gas can flow uniformly between these surfaces, allowing for maximum transport towards the panel 340. Figures 4 through 8 illustrate a heat shield 400. As discussed above with respect to heat shield 147, heat shield 400 can be used to control the heat distribution to a chamber (e.g., chamber body 330) in a substrate processing system. As illustrated, heat shield 400 may be fitted with or include a heat-conducting plate defining a first through-hole 424 and a second through-hole 425. The second through-hole 425 may be laterally offset from the first through-hole 424 on heat shield 400. The geometry of heat shield 400 may be provided to accommodate the structure of a cover plate, such as a lower cover plate 350. In a particular embodiment, the outer periphery of heat shield 400 may be generally teardrop-shaped. For example, the outer periphery may include a small arcuate segment connected by two generally linear segments to a larger arcuate segment. The second through-hole 425 may be coaxial with the small arcuate segment, while the first through-hole 424 may be coaxial with the larger arcuate segment. A heat shield 400 may define a first set of protrusions 426 extending from a first surface 422 of the heat shield 400. In some embodiments, the heat shield 400 may be located on a cover plate on the protrusions 515. The first set of protrusions 426 may be radially distributed around the illustrated first hole 424. For example, the protrusions 426 may be arranged in a generally symmetrical manner around the first hole 424. The protrusions 426 may be spaced apart at regular (or substantially regular) intervals around the first hole 424. As used herein, substantially regular intervals may be understood to mean that the angular spacing between any two adjacent protrusions may be within or about 10 degrees of the average angular spacing between adjacent protrusions of the heat shield 400, within or about 5 degrees of the average angular spacing, within or about 4 degrees of the average angular spacing, within or about 3 degrees of the average angular spacing, within or about 2 degrees of the average angular spacing, within or about 1 degree of the average angular spacing, or less. Although eight protrusions 426 are illustrated, it will be understood that any number of protrusions 426 may be included in embodiments of the present technology. For example, the heat shield 400 may include at least or about four protrusions 426, at least or about five protrusions 426, at least or about six protrusions 426, at least or about seven protrusions 426, at least or about eight protrusions 426, at least or about nine protrusions 426, at least or about ten protrusions 426, at least or about twelve protrusions 426, at least or about fourteen protrusions 426, or more. Each protrusion 426 may protrude outward from the first surface of the heat shield 400 by an amount between 0.05 mm and 0.50 mm or about 0.05 mm and 0.50 mm, between 0.10 mm and 0.40 mm or about 0.10 mm and 0.40 mm, between 0.15 mm and 0.30 mm or about 0.15 mm and 0.30 mm, or about 0.20 mm. The protrusion 426 may be an arcuate segment; however, the length of each protrusion 426 may be small enough that the shape of each protrusion 426 may approximate a rectangle. Each protrusion 426 may have a length or average length (e.g., the average length of the inner and outer edges of each protrusion 426) between 5 mm and 50 mm or approximately 5 mm and 50 mm, between 10 mm and 40 mm or approximately 10 mm and 40 mm, between 15 mm and 30 mm or approximately 15 mm and 30 mm, or approximately 20 mm. The width of each protrusion 426 (e.g., the distance between the inner and outer edges of each protrusion 426) may be between 1 mm and 10 mm or approximately 1 mm and 10 mm, between 2 mm and 9 mm or approximately 2 mm and 9 mm, between 3 mm and 8 mm or approximately 3 mm and 8 mm, or between 4 mm and 7 mm or approximately 4 mm and 7 mm. Typically, each of the protrusions 426 has the same set of dimensions, although some embodiments may combine one or more protrusions 426 with different dimensions. The heat shield 400 may define a plurality of protrusions 427 extending from a first surface of the heat shield 400 (e.g., along a flange 420), wherein the protrusions 427 are radially distributed around the illustrated second aperture 425. For example, the protrusions 427 may be arranged in a generally symmetrical manner around the second aperture 425. The protrusions 427 may be spaced apart at regular (or substantially regular) intervals around the second aperture 425. Although three protrusions 427 are illustrated, it will be understood that any number of protrusions 427 may be included in embodiments of the present technology. For example, the heat shield 400 may include at least or about three protrusions 427, at least or about four protrusions 427, at least or about five protrusions 427, or more. Each protrusion 427 may protrude outward from the first surface of the heat shield 400 by a distance between 0.05 mm and 0.50 mm or approximately 0.05 mm and 0.50 mm, between 0.10 mm and 0.40 mm or approximately 0.10 mm and 0.40 mm, between 0.15 mm and 0.30 mm or approximately 0.15 mm and 0.30 mm, or approximately 0.20 mm. Typically, the protrusion 427 may protrude outward from the first surface by the same or substantially the same distance as the protrusion 426 (e.g., within 10% or about 10%, within 5% or about 5%, within 3% or about 3%, within 1% or about 1%). The protrusion 427 may be an arcuate segment; however, the length of each protrusion 427 may be small enough that the shape of each protrusion 427 may approximate a rectangle. Each protrusion 427 may have a length or average length (e.g., the average length of the inner and outer edges of each protrusion 427) between 5 mm and 30 mm or about 5 mm and 30 mm, between 10 mm and 20 mm or about 10 mm and 20 mm, or about 15 mm. The width of each protrusion 427 (e.g., the distance between the inner and outer edges of each protrusion 427) may be between 1 mm and 8 mm or about 1 mm and 8 mm, between 1.5 mm and 6 mm or about 1.5 mm and 6 mm, or between 2 mm and 4 mm or about 2 mm and 4 mm. Typically, each of the protrusions 427 has the same set of dimensions, although some embodiments may combine one or more protrusions 427 with different dimensions. Protrusions 426, 427 help provide a minimum contact area that limits contact between the heat shield 400 and components located on top of the heat shield 400 (e.g., pumping liner 370). Although not shown, the lower surface of flange 420 may include a set of similar protrusions around each of the first hole 424 and the second hole 425. By incorporating the arrangement of the various protrusions around the first hole 424 and the second hole 425, embodiments of the present technology allow for more uniform deformation of the heat shield 400 under high vacuum loads. This uniform deformation ensures a uniform heat transfer system through the heat shield 400 and helps improve the temperature uniformity of the panel. Additionally, by keeping the protrusions small, contact between the heat shield 400 and the pumping liner 370 and the lower cover 350 is minimized, which limits heat transfer through the heat shield 400 and helps thermally insulate the pumping liner 370 and the panel 340 from the colder, unheated lower cover 350. In some embodiments, the heat shield 400 (and / or edge 410) may have a thickness (or height) from a first surface (e.g., the top surface 422 of edge 410 and flange 420) to a second surface (e.g., the lower surface of edge 410) between about 70 mm and 100 mm, about 75 mm and 95 mm, about 80 mm and 90 mm, or about 85 mm. In some embodiments, the thickness of flange 420 may be between about 10 mm and 25 mm or between about 15 mm and 20 mm. This sizing allows the lower surface of edge 410 to protrude downward from the lower surface of flange 420 by about 45 mm and 90 mm, about 50 mm and 85 mm, about 55 mm and 80 mm, about 60 mm and 75 mm, or about 65 mm and 70 mm. This distance helps increase the diffusion distance of the chamber and helps reduce the amount of purge gas that must flow into the chamber during processing to keep the chamber components free of membrane residue. Flange 420 includes a top surface 422 and a bottom surface 423. Flange 420 may define a purification inlet 421 at the top surface 422 for receiving purified gas passing through it. However, in other embodiments, the purification inlet may be defined through the peripheral edge of flange 420 and / or along the bottom surface of flange 420, as further discussed below. Edge 410 may define a plurality of purification outlets 411, which may be fluidly coupled to purification inlets 421 to deliver purified gas into the interior of first aperture 424 (and processing area 301). Purification outlets 411 may be positioned in one or more columns at one or more vertical locations on edge 410. For example, some or all of the purification outlets 411 may be located within the upper 25% of the edge 410, some or all of the purification outlets 411 may be located within the upper middle 25% of the edge 410, some or all of the purification outlets 411 may be located within the lower middle 25% of the edge 410, some or all of the purification outlets 411 may be located within the lower 25% of the edge 410, or at other locations around the edge 410. In one example, there may be 180 purification outlets to allow for a uniform distribution of gas exiting the purification outlets. However, in other embodiments, there may be more or fewer than 180 purification outlets. For example, there may be at least or about 40 purification outlets, at least or about 60 purification outlets, at least or about 80 purification outlets, at least or about 100 purification outlets, at least or about 120 purification outlets, at least or about 140 purification outlets, at least or about 160 purification outlets, at least or about 180 purification outlets, at least or about 200 purification outlets, at least or about 220 purification outlets, at least or about 240 purification outlets, or more. Purification outlets 411 may be formed at regular and / or irregular intervals around the inner surface of edge 410. Each purification outlet 411 may have the same diameter, or some or all of the purification outlets 411 may have different diameters from each other. Referring specifically to Figures 7 and 8, flange 420 may define a purification channel 428 extending through flange 420, which communicates with purification inlet 421 and extends from purification inlet toward edge 410 to form part of a purification flow path. Purification channel 428 may be fluidly coupled to a top (or first) chamber 416, which in some embodiments may extend around the entire circumference of edge 410. For example, the first chamber 416 may be generally annular in shape. In other embodiments, the first chamber 416 may be generally C-shaped or arcuate and may extend only around a portion of the periphery of the first aperture 424. Gas flowing through purification inlet 421 and purification channel 428 may flow into the first chamber 416 and be distributed around all or most of the periphery of the first aperture 424. Edge 410 may define a bottom (or second) chamber 412 located below the first chamber 416. Second chamber 412 may extend around the entire or substantially the entire circumference of edge 410. The second chamber 412 can be aligned and fluidly coupled to each of the purification outlets 411, which can deliver purified gas into the interior of the first orifice 424. Edge 410 may define one or more baffles 413 that extend between and fluidly couple the first air chamber 416 and the second air chamber 412. This allows the purified gas flowing in the first air chamber 416 to flow into the second air chamber 412 at one or more locations around the periphery of the first hole 424. Although only one baffle 413 is depicted in Figure 8, the heat shield 400 may define any number of baffles (not shown) at different radial locations around the first hole 424 to at least substantially distribute the purified gas around the circumference of the second air chamber 412. Any number of baffles 413 may be present in the heat shield 400. For example, the heat shield 400 may include one or more baffles, two or more baffles, three or more baffles, four or more baffles, five or more baffles, six or more baffles, eight or more baffles, ten or more baffles, or more. Each of the baffles 413 may have the same or different diameters and / or cross-sectional areas. For example, some or all of the baffles 413 may have different diameters and / or cross-sectional areas to take into account the proximity of the baffles to the purification inlet 421. Specifically, one or more baffles closer to the purification inlet 421 may have smaller diameters and / or cross-sectional areas to allow the purified gas to fill the portion of the top gas chamber 416 closer to the purification inlet 421 faster than the portion further away from the purification inlet 421. This difference in diameter and / or cross-sectional area allows the purified gas to fill the top gas chamber 416 and be delivered in a substantially uniform manner through the baffles 413 to the bottom gas chamber 412. This configuration allows the purified gas to exit the heat shield 400 uniformly to provide a uniform distribution of gas to the substrate processing system. The diameter of baffle 413 can often be between about 3 mm and 15 mm, between about 4 mm and 13 mm, between about 5 mm and 11 mm, or between about 6 mm and 10 mm, although other diameter series are possible in various embodiments. In one example, a total of four baffles 413 may be present, wherein the two baffles 413 closest to the purification inlet 421 may have a circumferential width of 6 mm, and the two baffles 413 furthest from the purification inlet may have a circumferential width of 10 mm. However, in other examples, any number of baffles 413 may be present. Furthermore, each of the baffles 413 may have any diameter and / or cross-sectional area to allow for uniform gas distribution into the second gas chamber 412. In an alternative example, a single baffle 413 (such as an annular or arcuate baffle) extending between the gas chambers may be present, wherein the single baffle has a cross-sectional area along its circumference (e.g., a smaller width closer to the purification inlet 421 and a larger width further away from the purification inlet 421) to take into account the location of the purification inlet 421. In another alternative, one or more baffles 413 may be present with substantially equal widths, and edges 410 may define the top air chamber 416 with different volumes along its circumference (e.g., the portion of the top air chamber 416 closer to the purification inlet 421 has a larger volume, and the portion of the top air chamber 416 further away from the purification inlet 421 has a smaller volume), taking into account the location of the purification inlet 421. In yet another alternative, one or more baffles 413 may have substantially equal widths, and the first air chamber may have substantially equal volumes along its circumference, and edges 410 may define the bottom air chamber 412 with different volumes along its circumference (e.g., the portion of the bottom air chamber 412 closer to the purification inlet 421 has a larger volume, and the portion of the bottom air chamber 412 further away from the purification inlet 421 has a smaller volume), taking into account the location of the purification inlet 421. In some embodiments, the heat shield 400 may additionally include a closure plate 430 fastened to the edge 410 by any means known in the art (e.g., welding or the like). The closure plate 430 may be used to seal air chambers and / or baffles after being machined and / or otherwise formed to the surface of the edge 410. In some embodiments, a portion of the edge 410 may define a measurement aperture 415 passing through it. The measurement aperture 415 may be used to measure the pressure level at the inner radius of the heat shield 400. In some embodiments, the measurement aperture 415 may be disposed between the first air chamber 416 and the second air chamber 412. The heat shield 400 solves the problems related to panel sublimation faced by previous substrate processing systems. In the conventional design of substrate processing systems, purge gas is discharged from the bottom of the chamber body to clean the processing area. However, in previous designs, the required flow rate for cleaning the processing area was too high when the purge gas came from the bottom of the chamber body. The heat shield 400 can solve this problem by introducing purified gas closer to the base 310 and the panel 340. Since the purified gas now exits the purified outlet 411, this reduces the flow rate of the purified gas required in the purified treatment area. This reduced distance therefore allows the panel 340 to be properly purified with a smaller volume of purified gas, and prevents sublimation across its surface by a reduced amount of purified flow rate than previously required. Furthermore, when the purifying gas comes from below, it can blow contaminants formed within the chamber body into the processing area 301. Since the purifying outlet 411 is now closer to the processing area 301, moving the purifying gas from the bottom of the chamber body to the heat shield 400 reduces the risk of such contamination. Additionally, by introducing the purifying gas into the reactor volume moving upwards into the chamber, the pressure difference between the reactor volume and the shared transfer volume in a multi-chamber system can be reduced. Temperature uniformity during thermal leveling at the base 310 can also be improved. Although the heat shield 400 is depicted as having a purge inlet 421 defined along the top surface 422 of the flange 420, it may be advantageous to allow the purge gas to enter the heat shield 400 from the bottom surface, as the purge gas source of the substrate processing system can be more preferably located below the system. Figure 9 depicts an alternative embodiment of the heat shield, in which the purge inlet may be defined along the bottom surface of the cover portion of the heat shield. For example, Figure 9 depicts a partial view of an embodiment of a substrate processing system 300' similar to the substrate processing system 300, except as mentioned below. In this embodiment, features having the same element symbols as those discussed above are similar, except as mentioned below. The flange 420' of the heat shield 400' may define a purge inlet 421' along the bottom surface 423' of the heat shield 400'. Therefore, the purge gas may enter the heat shield 400' from below. The chamber body 330' may define a chamber purge channel 332' through the chamber body 330', allowing the purge gas source to enter from below the chamber body 330'. The lower cover plate 350' defines a cover purification channel 351' that passes through the lower cover plate 350' for purified gas to pass through. In the assembled configuration, the chamber purification channel 332', the cover purification channel 351', and the purification inlet 421' are all aligned and interconnected, allowing purified gas to flow through each of these features. For example, purified gas can enter the chamber body 330' and enter the chamber purification channel 332' in direction A. The purified gas can pass through the chamber purification channel 332' and through the purification inlet 421' into the heat shield 400', and ultimately pass through the heat shield 400'. Figures 10 and 11 illustrate a partially assembled substrate processing system having isolators 510, 520, 530, a ground plane 380, a bellows 600, an RF gasket 700, and a spring mechanism 800 assembled together. The assembly of the bellows 600, RF gasket 700, and spring mechanism 800 will be further discussed below. Isolators 520 and 530 may be substantially cylindrical disks. Top isolator 520 may have a top surface 521 and a bottom surface 523. Bottom isolator may have a top surface 531 and a bottom surface 533. Top isolator 520 may define one or more wedge-shaped portions along the outer edge of top isolator 520 for receiving one or more components of the substrate processing system. For example, top isolator 520 may define a wedge-shaped portion 524 that can receive a portion of a component (e.g., a portion of outer isolator 510, as further discussed below) to be placed on top of and coupled to top isolator 520. Although not shown, multiple wedge-shaped portions may exist around the outer circumference of the top isolator 520 to allow multiple portions of the component (or multiple components) to be placed on top of the top isolator and coupled to the top isolator. A top isolator 520 may be located on a bottom isolator 510, and an outer isolator may be positioned around isolators 520 and 530. Due to the separation between isolators 520 and 530, between the heated component (e.g., base 310) on the top surface 521 of the top isolator 520 and the component below the bottom isolator 530 (e.g., ground plane 380), having multiple isolators allows for a greater reduction in heat transfer. Isolators 520 and 530 may define one or more outwardly extending recesses from their respective top and bottom surfaces 521, 523, 531, 533. For example, specifically referring to Figure 10, the top isolator 520 may define a recess 522 extending outward from the top surface 521. The top isolator 520 may additionally define a recess extending outward from the bottom surface 523, and the bottom isolator 530 may additionally define a recess extending outward from the bottom surface 533. The recesses 522 may be arranged in various patterns, such as numerous rings, radial lines, and / or other symmetrical or asymmetrical patterns. In various embodiments, any number of recesses 522 may be used. For example, a given surface may have 25 or more recesses, 50 or more recesses, 100 or more recesses, 150 or more recesses, 200 or more recesses, 250 or more recesses, 300 or more recesses, 350 or more recesses, 400 or more recesses, 450 or more recesses, 500 or more recesses, or more. These recesses can serve as a minimum contact area that reduces heat transfer from heated components of the substrate processing system (e.g., base 310) and components below the bottom isolator 530 (e.g., ground plane 380). In an alternative embodiment, recesses may be present extending from all the top and bottom surfaces of the two isolators. Alternatively, fewer than three sets of recesses may be present extending from one of the top and bottom surfaces of the isolators. The recess may have a height for optimally reducing heat transfer from the heated component to the remainder of the substrate processing system (e.g., to ground plane 380) while still providing structural support for the heated component. For example, recess 522 may have a height of 0.13 mm, recess extending from bottom surface 523 may have a height of 0.5 mm, and recess extending from bottom surface 533 may have a height of 0.5 mm. However, in other embodiments, the recess height may vary. For example, the recess may have a height ranging from 0.05 mm to 0.70 mm or approximately 0.05 mm and 0.70 mm, from 0.10 mm to 0.65 mm or approximately 0.10 mm and 0.65 mm, from 0.15 mm to 0.60 mm or approximately 0.15 mm and 0.60 mm, from 0.2 mm to 0.55 mm or approximately 0.2 mm and 0.55 mm, or from 0.25 mm to 0.5 mm or approximately 0.25 mm and 0.5 mm. Furthermore, the pits can have any combination of relative heights to optimize heat transfer reduction. For example, the pits may all have the same height. Or, the pits may all have different heights. The external isolator 510 may circumferentially surround isolators 520, 530 and other components in the substrate processing system, such as ground plane 380. The external isolator may include one or more flanges that may be placed on another component in the substrate processing system (e.g., on top of the wedge 524 of the top isolator 520) to couple the external isolator 510 to that component. For example, the external isolator 510 may have a flange 512 that may rest on top of the other component. The external isolator 510 may have additional flanges (e.g., three flanges) to couple the external isolator 510 to the component. In other embodiments, more or fewer than three flanges may be present. The lower surface of the flange 512 may include one or more minimal contact features, such as recesses, annular protrusions, and the like, which may reduce the contact area between the flange 512 and the external isolator. Isolators 510, 520, and 530 may be made of materials that minimize heat transfer. For example, one or more of isolators 510, 520, and 530 may be made of ceramic. In one example, all isolators 510, 520, and 530 may be made of ceramic. The ceramic material can further reduce heat transfer between components above and below isolators 510, 520, and 530. In other embodiments, the isolators may be made of materials other than ceramic that provide comparable or greater reductions in heat transfer. Isolators 510, 520, and 530 address issues related to substrate contamination from the substrate processing system. For example, ground plane 380 may be aluminum-coated stainless steel. An aluminum coating can be provided to minimize the risk of stainless steel oxidation and contaminant formation, as high temperatures (e.g., heat generated from the base 310 above ground plane 380 during substrate processing) exacerbate this risk. However, the rated temperature of this aluminum coating may be lower than the temperature used when processing the substrate. Therefore, the aluminum coating may peel off, exposing the stainless steel material, leading to oxidation of ground plane 380 and the formation of contaminants that risk contaminating the substrate. Using multiple isolators and minimal contact characteristics helps reduce the amount of heat transferred to the ground plane, thereby better isolating the ground plane from the high temperatures of the base. Isolators 510, 520, and 530 help minimize the risk of this oxidation. Specifically, isolators 520 and 530 reduce heat transfer from components on top of them (e.g., heated bases) through the gaps defined by isolators 520 and 530, the spacing between isolators 520 and 530, and the materials of isolators 510, 520, and 530. Furthermore, the outer isolator 530 acts as a shield for the ground plane 380 by reducing heat transfer to its sides. Thus, isolators 510, 520, and 530, individually or in combination, can minimize the risk of substrate contamination by sufficiently reducing heat transfer to the ground plane 380 to prevent the aluminum coating from peeling off and exposing the stainless steel. Figures 12 and 13 illustrate a bellows 600. The bellows 600 may include a cap plate 610, a bellows plate 620, and / or a bellows body 630. The cap plate 610 may be located on top of the top (or first) end 631 of the bellows body 630, and the bottom (or second) end 632 of the bellows body 630 may be located on top of the bellows plate 620. The ends 631 and 632 of the bellows body 630 may be secured to the cap plate 610 and the bellows plate 620 by welding, brazing, tightening, or other fastening means. The cap plate 610 may be shaped to couple one or more components of the substrate processing system (e.g., external isolator 510 and ground plane 380) to the bellows 600. Specifically, the cap plate 610 may include a cap base 618 and a cap extension 613 extending perpendicularly from the cap base 618. Although the cap extension 613 is depicted extending from the central periphery of the cap base 618, in other embodiments, the cap extension may extend from other locations along the cap base, such as the inner periphery of the cap base. The cap extension 613 and the cap base 618 may be formed integrally. However, in other embodiments, the cap extension 613 and the cap base 618 may be separate components joined together. The cap extension 613 and the cap base 618 may define an inner (or first) recess 614 and an outer (or second) recess 615 therebetween. Recesses 614 and 615 may be sized to receive a portion of another component of the substrate processing system. For example, in the case where the bellows 600 is assembled in the substrate processing system 300, the outer recess 615 may receive an end of the outer isolator 510. However, in other embodiments, the cap plate may not include one or both recesses. For example, the inner periphery of the cap plate may not include an inner recess and / or an outer recess, where no component is required to couple to the periphery of the cap plate. The cap extension 613 defines a cap channel 617. The cap channel 617 may be sized to receive a portion of another component of the substrate processing system (e.g., a portion of the ground plane 380). However, in other embodiments, a cap channel may not be present, where the component may have other members coupled to the bellows. The cap extension 613 may also include a plurality of cap protrusions 611 extending toward the inner volume of the bellows 600. Any number of cap protrusions may be present, such as three, four, five, six, or as many cap protrusions as desired for securing the bellows to another component of the substrate processing system. Each of the cap protrusions 611 can define a cap hole 612. The cap hole 612 can be sized and shaped to receive a fastening member (e.g., a screw). In this way, when the cap extension 613 is assembled in the substrate processing system 300, the bellows 600 can be fastened to the ground plane 380 through: a cap channel 617 receiving a portion of the ground plane 380, the bottom surface of the ground plane 380 resting on the top surface of the cap protrusion 611, and a fastening member, such as a screw, received through a portion of the ground plane 380 and the cap hole 612. The bellows body 630 may be made of a flexible material, such as a flexible metal sheet, which allows for compression and extension of the length of the bellows body 630. In this way, the distance between the cap plate 610 and the bellows plate 620 can be varied based on the compression and extension of the bellows body 630. Specifically, the length of the bellows body 630 may be determined based on the desired distance for moving the substrate within the processing area, as further discussed below. In one example, the bellows body 630 may have a compressed length of 40 mm and an extended length of 75 mm. However, in other examples, the bellows body may have a compressed length between 10 mm and 90 mm and an extended length between 40 mm and 120 mm. The bellows plate 620 may include a bellows base 625 and a bellows extension 621 extending outward from the bellows base 625. The bellows extension 621 may extend outward beyond the outer diameter of the bellows body 630. The bellows base 625 and the bellows extension 621 may be integrally formed. However, in other embodiments, the bellows base 625 and the bellows extension 621 may be separate components joined together. The bellows base 625 includes a plurality of bellows protrusions 623 extending toward the internal volume of the bellows 600. Any number of bellows protrusions may be present, such as three, four, five, six, or as many bellows protrusions as desired for securing the bellows to another component of the substrate processing system. The bellows protrusion 623 defines an internal bellows hole 624 and a plurality of external bellows holes 628. The holes 624 and 628 may be sized and shaped to couple the bellows 600 to components of a substrate processing system, as further discussed below. Although the bellows protrusion 623 is depicted as defining only one internal bellows hole 264 and six external bellows holes 628, in other embodiments, more or fewer holes may be present, as required to fasten components to the bellows. The bellows extension 621 may include a flange 627 extending outwardly from the bellows extension 621. The flange 627 may define a channel 622 sized to receive components of a substrate processing system. For example, the channel 622 may be sized to receive a radio-frequency (RF) gasket. In other embodiments, the bellows plate may not include a flange, and instead, a channel may be defined along the top surface of the bellows extension for receiving components, where a large outer diameter may not be desirable. Returning to Figures 10 and 11, the bellows 600 is illustrated as being assembled with the RF washer 700 and the spring mechanism 800. The RF washer 700 may be received within the channel 622 of the flange 627. The RF washer 700 may be fastened to the flange 627 by press fitting, welding, soldering, or the like. The RF washer 700 may have a thickness and shape that protrudes vertically beyond the flange 627. In this way, when the base 310 is raised to the processing position, the RF washer 700 may contact another component of the substrate processing system (e.g., the heat shield 400). However, in other embodiments, the RF washer may be sized and shaped such that the top surface of the RF washer is substantially flush with the top surface of the flange. The RF gasket 700 and at least the bellows plate 620 may be made of a conductive material (such as steel or aluminum) to create radio frequency continuity when the RF gasket 700 contacts another component that may have a conductive material (e.g., a heat shield 400). However, in other embodiments, other portions of the bellows may be made of a conductive material, including the entire bellows. The spring mechanism 800 may include a body 804, an insulating fastening mechanism 801, a conductive fastening mechanism 802, a spring shaft 805, a spring 803, and a spring plate 806. The spring mechanism 800 may be fastened to the bellows 600 via fastening mechanisms 801 and 802, which are received via bellows protrusions 623 and engage with the body 804. The insulating fastening mechanism 801 may be a pin that helps fasten the body 804 to the bellows plate 620, and the conductive fastening mechanism 802 may be a screw. However, in other embodiments, the fastening mechanisms may take any form capable of fastening the spring mechanism to the bellows. For example, the fastening mechanisms may all be pins, all be screws, or may be any other form of fastening mechanism. The insulating fastening mechanism 801 may be made of an insulating material (such as ceramic), while the conductive fastening mechanism 802 may be made of a conductive material (such as steel or aluminum). In this way, radio frequency continuity can be formed from the RF gasket to the conductive fastening mechanism 802, but will not pass through the insulating fastening mechanism 801. This ensures that only a single path exists for radio frequency flow. The spring mechanism 800 can be fastened to a portion of the ground plane 380 via a spring shaft 805, which extends through an opening 807 defined by the body 804. Specifically, the tip of the spring shaft 805 can extend through the internal volume of the bellows 600 to engage within a hole in the ground plane 380. Spring 803 and spring plate 806 may surround spring shaft 805. Spring plate 806 may be fastened to spring shaft 805 adjacent to the bottom end of spring shaft 805 (e.g., via press fit, threaded fit, welding, brazing, or the like). The outer diameter of spring plate 806 may be larger than the diameter of opening 807, such that when spring plate 806 moves vertically a certain amount, spring plate 806 may not pass through opening 807, but abut against body 804. The top end of spring 803 may engage with the bottom surface of ground plane 380 (e.g., via soldering, flexible soldering, or the like), while the bottom end of spring 803 may engage with the top surface of spring plate 806 (e.g., via soldering, flexible soldering, or the like). In this way, spring 803 can help provide a spring force that limits the distance that ground plane 380 can move relative to spring mechanism 800 (and thus relative to bellows 600). In various embodiments, spring 803 may be a tension spring such that when base 310 is raised, flange 627 and RF gasket contact the lower surface of heat shield 400 (or other chamber component) and cause bellows 600 to expand. Spring 803 may elongate as bellows 600 expands. The contact between RF gasket and heat shield 400 can help close the RF circuit by connecting heat shield 400 and base 310. When the base is lowered to the transfer position, the baffle lowers and disengages from the heat shield 400, which disconnects the RF circuit. Furthermore, when the base 310 is lowered and the flange 627 and RF gasket are pulled away from the heat shield 400, the tension in the spring 803 helps compress the bellows 600 to its unexpanded state. Figures 14 through 17 illustrate partial views of the substrate processing system 300 as the bellows 600 moves from the transfer area 331 to the processing area 301 and is within that processing area 301. Turning first to Figure 14, the bellows 600 is depicted in a resting position within the substrate processing system 300. In this position, the base 310 is attached at its furthest point from the panel 340. Turning to Figure 15, the bellows 600 is depicted as having moved upwards, such that the base 310 is leaving the chamber volume 331 and about to enter the processing area 301. In this position, the base 310 can be 90 mm away from the panel 340. Turning to Figure 16, the bellows 600 is depicted as having moved upwards, such that the RF gasket within the bellows plate 620 contacts the heat shield 400 at its end 401, thereby closing the RF circuitry between the base 310 and the chamber wall. Specifically, the end 401 of the heat shield 400 provides a rigid stop for the movement of the bellows plate 620. In this position, the base 310 can be up to 20 mm from the panel 340. Turning to Figure 17, the bellows 600 remains in contact with the end 401 of the heat shield 400, but the bellows 600 has changed from the compressed position shown in Figures 14 to 16 to the extended position. In this position, the base 310 can be moved up to 5 mm away from the panel 340, and the substrate (e.g., gas escaping from the panel 340) can be handled when the substrate is placed on the base 310. In Figures 14 to 16, the bellows 600 in its compressed position may be 40 mm, while in Figure 17, the bellows 600 in its extended position may be 55 mm. However, other measurements of the bellows are foreseeable. For example, the bellows in its compressed position may be between 10 mm and 90 mm, while the bellows in its extended position may be between 40 mm and 120 mm. Based on at least one of the maximum extension distance of the bellows body 630 achieved and / or the spring force, the grounding plate 380 may stop at the position shown in Figure 17. Once the substrate processing cycle is complete, the base 310 can be lowered by first lowering the bellows 600 from its extended position back to its compressed position. Then, the base 310 can be lowered by lowering both the bellows 600 and the base 310 until the substrate processing system 300 reaches the position shown in Figure 14. Spring force helps compress the bellows to its unexpanded state. In the foregoing description, numerous details have been set forth for illustrative purposes in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to those skilled in the art that certain embodiments may be practiced without some of these details or with additional details. With several embodiments disclosed, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents can be used without departing from the spirit of the embodiments. Furthermore, many well-known processes and elements have not been described to avoid unnecessarily obscuring the art. Therefore, the above description should not be considered as limiting the scope of the art. Additionally, methods or processes may be described sequentially or step-by-step, but it will be understood that operations may be performed simultaneously or in a different order than those listed. Where a range of values ​​is provided, it will be understood that, unless the context explicitly indicates otherwise, the minimum fraction of each intermediate value between the upper and lower limits of that range is also specifically disclosed. This encompasses any narrower range between any value or intermediate value not mentioned in the mentioned range and any other mentioned or intermediate value in the mentioned range. The upper and lower limits of those narrower ranges may be independently included or excluded from the range, and each range (where any limit, no limit, or both limits are included in the narrower range) is also covered within the scope of any specifically excluded limit in the mentioned range. Where a mentioned range includes one or two limits, the range excluding any or both of those included limits is also included. As used herein and in the claims of the appended patent application, unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” include plural references. Thus, for example, a reference to “a plate” includes a plural of such plates, and a reference to “the hole” includes a reference to one or more holes and their equivalents known to those skilled in the art, and so on. Furthermore, when used in this specification and the following claims, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including" are intended to specify the presence of the mentioned feature, integer, component, or operation, but such terms do not preclude the presence or addition of one or more other features, integers, components, operations, actions, or groups. Directional references such as "up," "upper," "lower," "downward," "top," "left," "right," and "bottom" are not intended to be restrictive, but rather to represent the orientation shown and described in the diagrams (or figures) to which the component and orientation are referenced. 100: Processing System 102: Front-Opening Wafer Transfer Box 103: Factory Interface 104a: Robotic Arm 104b: Robotic Arm 106: Low-Pressure Holding Area 107: Entrance / Exit 108: Substrate Processing Area 108a: Processing Area 108b: Processing Area 109: Block Section 109a: Block Section 109b: Block Section 109c: Block Section 110: Second Robotic Arm 112: Transfer Chamber 120: Transfer Area 125: Transfer Area Housing 130a: Substrate Support 130b: Substrate Support 135: Transfer Equipment 140a: Panel 140b: Panel 142: Heater 145a: Pump Liner 145b : Pumping liner 147: Heat shield 150a: Barrier plate 150b: Barrier plate 155: Cover 158: First cover plate 160a: First hole 160b: Second hole 165: Remote plasma unit 170a: First purification channel 170b: Second purification channel 200: Chamber system 205: Transfer area shell 207: Inlet / outlet position 210a: Substrate support 210b: Substrate support 210c: Substrate support 210d: Substrate support 212: Lifting pin 215: Inlet / outlet 220: Transfer equipment 225: Central hub 235: End effector 237: Arm 300: Substrate processing system 300': Substrate processing system 3 01: Processing area 310: Base 311: Outer surface 330: Transfer area shell 330': Chamber body 331: Transfer area 332': Chamber purification channel 340: Panel 350: Lower cover 350': Lower cover 351': Cover purification channel 360: Upper cover 361: Vertical gap 370: Pumping liner 371a: Outlet 371b: Outlet 380: Grounding plate 400: Heat shield 400': Heat shield 401: Far end 410: Edge 411: Purification outlet 412: Second chamber 413: Baffle 416: First chamber 417: Inner surface 420: Flange 420': Flange 421: Purification inlet 421': Purification Inlet 422: First Surface 423: Bottom Surface 423': Bottom Surface 424: First Hole 425: Second Hole 426: First Set of Protrusions 427: Protrusion 430: Sealing Plate 510: Isolator 511: Outer Surface 512: Flange 520: Isolator 521: Top Surface 522: Recess 523: Bottom Surface 524: Wedge-shaped Part 530: Isolator 531: Top Surface 533: Bottom Surface 600: Bellows 610: Cap Plate 611: Cap Protrusion 612: Cap Hole 613: Cap Extension 614: Notch 615: Notch 617: Cap Channel 618: Cap Base 620: Bellows Plate 621: Bellows Extension622: Channel; 623: Bellows protrusion; 624: Internal bellows hole; 625: Bellows base; 627: Flange; 628: External bellows hole; 630: Bellows body; 631: End; 632: End; 700: RF washer; 800: Spring mechanism; 801: Insulating fastening mechanism; 802: Conductive fastening mechanism; 803: Spring; 804: Body; 805: Spring shaft; 807: Opening; AA: Sectional view; BB: Sectional view; CC: Sectional view. A further understanding of the nature and advantages of the disclosed technology can be achieved by referring to the remainder of the specification and the diagrams. Figure 1A illustrates a schematic top view of an exemplary processing tool according to some embodiments of the present technology. Figure 1B illustrates a schematic partial cross-sectional view of an exemplary processing system according to some embodiments of the present technology. Figure 2 illustrates a schematic isometric view of a transfer section of an exemplary substrate processing system according to some embodiments of the present technology. Figure 3 illustrates a cross-sectional view of an exemplary system arrangement of an exemplary substrate processing system according to some embodiments of the present technology. Figure 4 shows a top isometric view of the heat shield of the substrate processing system in Figure 3. Figure 5 shows a bottom isometric view of the heat shield of the substrate processing system in Figure 3. Figure 6 shows a cross-sectional view of the heat shield AA in Figure 4. Figure 7 shows a cross-sectional view of the heat shield BB in Figure 4. Figure 8 shows a cross-sectional view of the heat shield plate in Figure 4, which is a cross-sectional view CC. Figure 9 illustrates a partial cross-sectional view of an exemplary system arrangement of an exemplary substrate processing system according to some embodiments of the present technology. Figure 10 shows a top isometric view of the isolator and various components of the substrate processing system in Figure 3. Figure 11 shows a cross-sectional view of the isolator and various components of the substrate processing system in Figure 10. Figure 12 illustrates a top isometric view of a bellows according to some embodiments of the present technology. Figure 13 shows a side elevation view of the bellows in Figure 12. Figure 14 illustrates a partial cross-sectional view of a bellows in a processing chamber according to some embodiments of the present technology. Figure 15 illustrates a partial cross-sectional view of a bellows in a processing chamber according to some embodiments of the present technology. Figure 16 illustrates a partial cross-sectional view of a bellows in a processing chamber according to some embodiments of the present technology. Figure 17 illustrates a partial cross-sectional view of a bellows in a processing chamber according to some embodiments of the present technology. Domestic storage information (please note in order of storage institution, date, and number): None. International storage information (please note in order of storage country, institution, date, and number): None. 300: Substrate Processing System 301: Processing Area 310: Base 311: Outer surface 330: Transfer area housing 331: Transfer Area 340: Panel 350: Lower cover plate 360: Upper cover plate 361: Vertical gap 370: Pumping Liner 371a: Export 371b: Export 380: Flooring 400: Heat shield 410: Edge 417: Inner surface 420: Flange 510: Isolator 511: Outer surface 520: Isolator 530: Isolator

Claims

1. A heat shield plate for use in a substrate processing system, comprising: a plate defining a first hole through the plate and a second hole through the plate, wherein the second hole is laterally offset from the first hole, the plate comprising: a flange defining a purification inlet; and an edge defining a plurality of purification outlets fluidly coupled to the purification inlet, each of the plurality of purification outlets being fluidly coupled to the first hole.

2. The heat shield as claimed in claim 1, wherein the purification inlet is defined along a top surface of the flange.

3. The heat-insulating plate as claimed in claim 1, wherein the purification inlet is defined along a bottom surface of the flange.

4. The heat shield as described in claim 1, wherein: The edge at least partially defines a first air chamber, a second air chamber, and at least one baffle extending between the first and second air chambers and fluidly coupled to the first and second air chambers; and the first and second air chambers and the baffle are in fluid communication with the purification inlet and the plurality of purification outlets.

5. The heat shield as described in claim 4, wherein: The at least one baffle includes a plurality of baffles, the plurality of baffles including a first baffle and a second baffle; and the first baffle has a cross-sectional area different from that of the second baffle.

6. The heat shield as described in claim 5, wherein: The first baffle is closer to the purification inlet than the second baffle; and the first baffle has a smaller cross-sectional area than the second baffle.

7. The heat shield as claimed in claim 4, wherein the heat shield includes a sealing plate that is engaged with the edge to define the first and second air chambers and the baffle therebetween.

8. A substrate processing system comprising: a chamber body defining a transfer region; a substrate support disposed within the transfer region; a cover plate located on the chamber body, wherein the cover plate defines a hole through the cover plate; and a heat-resistant plate located on the cover plate along a first surface of the heat-resistant plate, wherein: The heat shield defines a first hole through the plate and a second hole through the plate; the second hole is laterally offset from the first hole; the heat shield includes a flange defining a purge inlet; and the heat shield includes an edge defining a plurality of purge outlets fluidly coupled to the purge inlet, each of the plurality of purge outlets fluidly coupled to the first hole; a pumping liner is located on the heat shield; And a panel located on the pumping liner.

9. The substrate processing system as claimed in claim 8, wherein: The main body of the chamber defines a channel communicating with the purification inlet to form part of a purification flow path.

10. The substrate processing system of claim 8 further includes a bellows coupled to a bottom side of the substrate support, the bellows including a flange on which an RF washer is disposed, the RF washer being aligned with the edge of the heat shield along a vertical axis.

11. The substrate processing system as claimed in claim 10, wherein: The substrate support is vertically translatable within the transfer area between a transfer position and a processing position; in the processing position, the bellows expands and the RF gasket contacts the edge of the heat shield to close an RF return path; and in the transfer position, the bellows contracts and the RF gasket is perpendicularly spaced from the edge of the heat shield.

12. The substrate processing system as claimed in claim 8, wherein the edge of the heat shield has a length between about 70 mm and 100 mm.

13. A substrate processing system comprising: a chamber body defining a transfer area; a substrate support disposed within the transfer area, wherein the substrate support is vertically translatable within the chamber body between the transfer area and a processing area, the substrate support comprising: a ground plane; a first isolator located on top of the ground plane; and a second isolator located on top of the first isolator.

14. The substrate processing system of claim 13, wherein the top isolator defines a first set of recesses extending from a surface of the first isolator, and the second isolator defines a second set of recesses extending from a surface of the second isolator.

15. The substrate processing system of claim 14, wherein the height of each of the first set of recesses and the second set of recesses is equal.

16. The substrate processing system of claim 14, wherein the height of each of the first set of recesses is different from the height of the second set of recesses.

17. The substrate processing system as claimed in claim 14, wherein: The surface of the first isolator is a top surface and the first set of pits extends from the top surface; The surface of the second isolator is a bottom surface and the second set of pits extends from the bottom surface.

18. The substrate processing system of claim 14, wherein the first isolator defines a third set of recesses extending from a bottom surface of the first isolator.

19. The substrate processing system of claim 14, further comprising an external isolator located on at least a portion of the first isolator.

20. The substrate processing system as claimed in claim 19, wherein: The outer isolator includes an annular body; the top isolator defines a wedge-shaped portion; and a top end of the outer isolator includes a flange located on the top of the wedge-shaped portion, such that the annular body circumferentially surrounds the first isolator.

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