Physical unclonable function generator

Abstract

A physically non-replicable function generator structure includes a first diode, a second diode, a first fuse, and a second fuse. The first diode includes a first anode and a first cathode. The second diode includes a second anode and a second cathode. The first anode is coupled to the second anode. The first fuse is coupled to the first cathode. The second fuse is coupled to the second cathode.

Description

[Technical Field]

[0001] This invention relates to a semiconductor structure, and more particularly to a physically unreplicable function generator structure. [Previous Technology]

[0002] Currently, physically unclonable function (PUF) technology is widely used in security products. PUF technology is a technique used to create unique random keys for physical entities (such as integrated circuits). Generally, a PUF generator structure utilizes manufacturing variations in semiconductor processes to obtain unique random codes. Even with precise manufacturing processes to produce semiconductor wafers, these random codes are virtually impossible to copy, thus PUF technology offers high security. [Summary of the Invention]

[0003] The present invention provides a physically non-replicable function generator structure, which can be used to generate random codes.

[0004] This invention proposes a physically unreplicable function generator structure, including a first diode, a second diode, a first fuse, and a second fuse. The first diode includes a first anode and a first cathode. The second diode includes a second anode and a second cathode. The first anode is coupled to the second anode. The first fuse is coupled to the first cathode. The second fuse is coupled to the second cathode.

[0005] According to an embodiment of the present invention, in the above-mentioned physically unreplicable function generator structure, the first diode and the second diode may both be PN diodes or both be Schottky diodes.

[0006] According to one embodiment of the present invention, the above-described physically unreplicable function generator structure may further include a transistor. The transistor may be coupled to the first cathode and the first fuse.

[0007] According to one embodiment of the present invention, the above-described physically unreplicable function generator structure may further include a third diode and a fourth diode. The third diode may include a third anode and a third cathode. The third cathode may be coupled to a first cathode. The third anode may be coupled to a first fuse. The first diode may be coupled to the first fuse via the third diode. The fourth diode may include a fourth anode and a fourth cathode. The fourth cathode may be coupled to a second cathode. The fourth anode may be coupled to a second fuse. The second diode may be coupled to the second fuse via the fourth diode.

[0008] According to one embodiment of the present invention, the above-described physically unreplicable function generator structure may further include a transistor. The transistor may be coupled to the third anode and the first fuse.

[0009] This invention proposes another physically unreplicable function generator structure, including a first diode, a second diode, a first fuse, and a second fuse. The first diode includes a first anode and a first cathode. The second diode includes a second anode and a second cathode. The first cathode is coupled to the second cathode. The first fuse is coupled to the first anode. The second fuse is coupled to the second anode.

[0010] According to another embodiment of the present invention, in the above-mentioned physically unreplicable function generator structure, the first diode and the second diode may both be PN diodes or both be Schottky diodes.

[0011] According to another embodiment of the present invention, the above-described physically unreplicable function generator structure may further include a transistor. The transistor may be coupled to the first anode and the first fuse.

[0012] According to another embodiment of the present invention, the above-described physically unreplicable function generator structure may further include a third diode and a fourth diode. The third diode may include a third anode and a third cathode. The third anode may be coupled to a first anode. The third cathode may be coupled to a first fuse. The first diode may be coupled to the first fuse via the third diode. The fourth diode may include a fourth anode and a fourth cathode. The fourth anode may be coupled to a second anode. The fourth cathode may be coupled to a second fuse. The second diode may be coupled to the second fuse via the fourth diode.

[0013] According to another embodiment of the present invention, the above-described physically unreplicable function generator structure may further include a transistor. The transistor may be coupled to the third cathode and the first fuse.

[0014] Based on the above, in a physically uncopyable function generator structure proposed in one embodiment of the present invention, the first anode of the first diode is coupled to the second anode of the second diode, the first fuse is coupled to the first cathode of the first diode, and the second fuse is coupled to the second cathode of the second diode. Therefore, when a reverse bias is applied to the first diode and the second diode, the first diode or the second diode will randomly break down, randomly causing the first fuse or the second fuse to blow, thereby generating a random code. In a physically uncopyable function generator structure proposed in another embodiment of the present invention, the first cathode of the first diode is coupled to the second cathode of the second diode, the first fuse is coupled to the first anode of the first diode, and the second fuse is coupled to the second anode of the second diode. Therefore, when a reverse bias is applied to the first diode and the second diode, the first diode or the second diode will randomly break down, randomly causing the first fuse or the second fuse to blow, thereby generating a random code.

[0015] In order to make the above features and advantages of the present invention more apparent and understandable, specific embodiments are described below, and detailed descriptions are given in conjunction with the accompanying drawings.

Implementation Method

[0017] Figure 1 is a circuit diagram of a physically uncopyable function generator structure according to some embodiments of the present invention. Figure 2 is a circuit diagram of a physically uncopyable function generator structure according to other embodiments of the present invention.

[0018] Referring to Figure 1, the physically unreplicable function generator structure 10 includes a diode 100, a diode 102, a fuse 200, and a fuse 202. Diode 100 includes an anode A1 and a cathode C1. Diode 102 includes an anode A2 and a cathode C2. Anode A1 is coupled to anode A2. Fuse 200 is coupled to cathode C1. Fuse 202 is coupled to cathode C2. In this embodiment, as shown in Figure 1, diode 100 and diode 102 may both be PN diodes, but this invention is not limited thereto. In other embodiments, as shown in Figure 2, diode 100 and diode 102 may both be Schottky diodes. In some embodiments, diode 100 and diode 102 may be diodes constructed on monocrystalline silicon or polycrystalline silicon materials.

[0019] The physically unreplicable function generator structure 10 may further include a transistor 300. In some embodiments, the transistor 300 may include electrodes 302, 304, 306, and a body 308. Electrode 302 may be used as a gate, electrode 304 may be used as one of a source and a drain, and electrode 306 may be used as the other of a source and a drain. The transistor 300 may be coupled to a cathode C1 and a fuse 200. For example, electrode 304 of the transistor 300 may be coupled to a cathode C1 and a fuse 200.

[0020] Hereinafter, the operation method of the physically uncopyable function generator structure 10 will be described by way of example. The operation method of the physically uncopyable function generator structure 10 may include performing an enrollment operation. The enrollment operation includes applying a reverse bias voltage to diodes 100 and 102, causing diodes 100 or 102 to randomly collapse, thereby randomly causing fuses 200 or 202 to blow, thereby generating a random code. For example, a voltage V1 may be applied to the anode A1 of diode 100 and the anode A2 of diode 102, and the same voltage V2 may be applied to fuses 200 and 202, wherein voltage V2 is greater than voltage V1, thereby applying a reverse bias voltage to diodes 100 and 102. Furthermore, during the enrollment operation, electrodes 302 and 306 of transistor 300 and substrate 308 may be in a floating state.

[0021] Furthermore, the operation method of the physically non-replicable function generator structure 10 may further include performing an extraction operation. In some embodiments, during the extraction operation, the anode A1 of diode 100, the anode A2 of diode 102, and the fuse 202 may be in a floating state. A 0V voltage may be applied to the fuse 200, an operating voltage may be applied to the electrode 302 of transistor 300, a read voltage may be applied to the electrode 306 of transistor 300, and a ground voltage may be applied to the substrate 308 of transistor 300. Therefore, it can be determined by transistor 300 whether the fuse 200 has blown. If the fuse 200 blows, it can be considered that first data (e.g., data "1") is registered in the physically non-replicable function generator structure 10. If the fuse 200 does not blow, it can be considered that second data (e.g., data "0") is registered in the physically non-replicable function generator structure 10.

[0022] Based on the above embodiments, in the physically uncopyable function generator structure 10, the anode A1 of diode 100 is coupled to the anode A2 of diode 102, the fuse 200 is coupled to the cathode C1 of diode 100, and the fuse 202 is coupled to the cathode C2 of diode 102. Therefore, when a reverse bias is applied to diode 100 and diode 102, diode 100 or diode 102 will randomly collapse, randomly causing fuse 200 or fuse 202 to melt, thereby generating a random code.

[0023] Figure 3 is a circuit diagram of a physically uncopyable function generator structure according to some embodiments of the present invention. Figure 4 is a circuit diagram of a physically uncopyable function generator structure according to some embodiments of the present invention.

[0024] Referring to Figures 1 and 3, the differences between the physically non-replicable function generator structure 20 in Figure 3 and the physically non-replicable function generator structure 10 in Figure 1 are as follows. In the physically non-replicable function generator structure 20, cathode C1 is coupled to cathode C2, fuse 200 is coupled to anode A1, and fuse 202 is coupled to anode A2. Furthermore, in the physically non-replicable function generator structure 20, transistor 300 can be coupled to anode A1 and fuse 200. In this embodiment, as shown in Figure 3, diode 100 and diode 102 can both be PN diodes, but the present invention is not limited thereto. In other embodiments, as shown in Figure 4, diode 100 and diode 102 can both be Schottky diodes.

[0025] Furthermore, in Figures 1, 3 and 4, the same or similar components are represented by the same symbols and their descriptions are omitted.

[0026] Hereinafter, the operation method of the physically uncopyable function generator structure 20 will be described by way of example. The operation method of the physically uncopyable function generator structure 20 may include performing a registration operation. The registration operation includes applying a reverse bias voltage to diode 100 and diode 102, causing diode 100 or diode 102 to randomly collapse, thereby randomly causing fuse 200 or fuse 202 to blow, thereby generating a random code. For example, a voltage V3 may be applied to the cathode C1 of diode 100 and the cathode C2 of diode 102, and the same voltage V4 may be applied to fuse 200 and fuse 202, with voltage V3 being greater than voltage V4, thereby applying a reverse bias voltage to diode 100 and diode 102. In addition, during the registration operation, the electrodes 302 and 306 of transistor 300 and the substrate 308 may be in a floating state.

[0027] Furthermore, the operation method of the physically non-replicable function generator structure 20 may further include performing an extraction operation. In some embodiments, during the extraction operation, the cathode C1 of diode 100, the cathode C2 of diode 102, and the fuse 202 may be in a floating state. A 0V voltage may be applied to the fuse 200, an operating voltage may be applied to the electrode 302 of transistor 300, a read voltage may be applied to the electrode 306 of transistor 300, and a ground voltage may be applied to the substrate 308 of transistor 300. Therefore, it can be determined by transistor 300 whether the fuse 200 has blown. If the fuse 200 blows, it can be considered that first data (e.g., data "1") is registered in the physically non-replicable function generator structure 20. If the fuse 200 does not blow, it can be considered that second data (e.g., data "0") is registered in the physically non-replicable function generator structure 20.

[0028] Based on the above embodiments, in the physically uncopyable function generator structure 20, the cathode C1 of diode 100 is coupled to the cathode C2 of diode 102, the fuse 200 is coupled to the anode A1 of diode 100, and the fuse 202 is coupled to the anode A2 of diode 102. Therefore, when a reverse bias is applied to diode 100 and diode 102, diode 100 or diode 102 will randomly collapse, randomly causing fuse 200 or fuse 202 to melt, thereby generating a random code.

[0029] Figure 5 is a circuit diagram of a physically non-replicable function generator structure according to some embodiments of the present invention. Figure 6 is a circuit diagram of a physically non-replicable function generator structure according to some embodiments of the present invention. Figure 7 is a circuit diagram of a physically non-replicable function generator structure according to some embodiments of the present invention. Figure 8 is a circuit diagram of a physically non-replicable function generator structure according to some embodiments of the present invention.

[0030] Referring to Figures 1 and 5, the differences between the physically unreplicable function generator structure 30 in Figure 5 and the physically unreplicable function generator structure 10 in Figure 1 are as follows. The physically unreplicable function generator structure 30 may further include diodes 104 and 106. Diode 104 may include an anode A3 and a cathode C3. Cathode C3 may be coupled to cathode C1. Anode A3 may be coupled to fuse 200. Diode 100 may be coupled to fuse 200 via diode 104. Fuse 200 may be coupled to cathode C1 via diode 104. Diode 106 may include an anode A4 and a cathode C4. Cathode C4 may be coupled to cathode C2. Anode A4 may be coupled to fuse 202. Diode 102 may be coupled to fuse 202 via diode 106. Fuse 202 may be coupled to cathode C2 via diode 106. In the physically unreplicable function generator structure 30, the transistor 300 may be coupled to the anode A3 and the fuse 200. For example, the electrode 304 of the transistor 300 may be coupled to the anode A3 and the fuse 200.

[0031] In this embodiment, as shown in FIG5, diode 100 and diode 102 may both be PN diodes, and diode 104 and diode 106 may both be Schottky diodes, but the present invention is not limited thereto. In some embodiments, as shown in FIG6, diode 100 and diode 102 may both be Schottky diodes, and diode 104 and diode 106 may both be PN diodes. In some embodiments, as shown in FIG7, diode 100, diode 102, diode 104, and diode 106 may all be PN diodes. In some embodiments, as shown in FIG8, diode 100, diode 102, diode 104, and diode 106 may all be Schottky diodes. In some embodiments, diodes 100, 102, 104 and 106 may be diodes constructed on monocrystalline silicon or polycrystalline silicon materials.

[0032] Furthermore, in Figures 1, 5 to 8, the same or similar components are represented by the same symbols and their descriptions are omitted.

[0033] In some embodiments, the registration operation performed on the physically non-replicable function generator structure 30 may include applying a reverse bias voltage to diodes 100 and 102, causing diodes 100 or 102 to randomly collapse, thereby randomly causing fuses 200 or 202 to blow, thereby generating a random code. Furthermore, the method of applying a reverse bias voltage to diodes 100 and 102 of the physically non-replicable function generator structure 30 can be referenced to the method of applying a reverse bias voltage to diodes 100 and 102 of the physically non-replicable function generator structure 10, and its description is omitted here.

[0034] In other embodiments, the registration operation performed on the physically non-replicable function generator structure 30 may include applying a reverse bias voltage to diodes 104 and 106, causing diodes 104 or 106 to randomly collapse, thereby randomly causing fuses 200 or 202 to blow, thereby generating a random code. Furthermore, the method of applying a reverse bias voltage to diodes 104 and 106 of the physically non-replicable function generator structure 30 can be referenced to the method of applying a reverse bias voltage to diodes 100 and 102 of the physically non-replicable function generator structure 20, and its description is omitted here.

[0035] Furthermore, the method for extracting the physically non-replicable function generator structure 30 can be referred to the method for extracting the physically non-replicable function generator structure 10, and its description is omitted here.

[0036] Figure 9 is a circuit diagram of a physically uncopyable function generator structure according to some embodiments of the present invention. Figure 10 is a circuit diagram of a physically uncopyable function generator structure according to some embodiments of the present invention. Figure 11 is a circuit diagram of a physically uncopyable function generator structure according to some embodiments of the present invention. Figure 12 is a circuit diagram of a physically uncopyable function generator structure according to some embodiments of the present invention.

[0037] Referring to Figures 3 and 9, the differences between the physically unreplicable function generator structure 40 in Figure 9 and the physically unreplicable function generator structure 20 in Figure 3 are as follows. The physically unreplicable function generator structure 40 may further include diode 104 and diode 106. Diode 104 may include an anode A3 and a cathode C3. Anode A3 may be coupled to anode A1. Cathode C3 may be coupled to fuse 200. Diode 100 may be coupled to fuse 200 via diode 104. Fuse 200 may be coupled to anode A1 via diode 104. Diode 106 may include anode A4 and cathode C4. Anode A4 may be coupled to anode A2. Cathode C4 may be coupled to fuse 202. Diode 102 may be coupled to fuse 202 via diode 106. Fuse 202 may be coupled to anode A2 via diode 106. In the physically unreplicable function generator structure 40, transistor 300 may be coupled to cathode C3 and fuse 200. For example, electrode 304 of transistor 300 may be coupled to cathode C3 and fuse 200.

[0038] In this embodiment, as shown in FIG9, diodes 100 and 102 may both be PN diodes, and diodes 104 and 106 may both be Schottky diodes, but the present invention is not limited thereto. In some embodiments, as shown in FIG10, diodes 100 and 102 may both be Schottky diodes, and diodes 104 and 106 may both be PN diodes. In some embodiments, as shown in FIG11, diodes 100, 102, 104, and 106 may all be PN diodes. In some embodiments, as shown in FIG12, diodes 100, 102, 104, and 106 may all be Schottky diodes. In some embodiments, diodes 100, 102, 104 and 106 may be diodes constructed on monocrystalline silicon or polycrystalline silicon materials.

[0039] Furthermore, in Figures 3, 9 to 12, the same or similar components are represented by the same symbols and their descriptions are omitted.

[0040] In some embodiments, the registration operation performed on the physically non-replicable function generator structure 40 may include applying a reverse bias voltage to diodes 100 and 102, causing diodes 100 or 102 to randomly collapse, thereby randomly causing fuses 200 or 202 to blow, thereby generating a random code. Furthermore, the method of applying a reverse bias voltage to diodes 100 and 102 of the physically non-replicable function generator structure 40 can be referenced to the method of applying a reverse bias voltage to diodes 100 and 102 of the physically non-replicable function generator structure 20, and its description is omitted here.

[0041] In other embodiments, the registration operation performed on the physically non-replicable function generator structure 40 may include applying a reverse bias voltage to diodes 104 and 106, causing diodes 104 or 106 to randomly collapse, thereby randomly causing fuses 200 or 202 to blow, thereby generating a random code. Furthermore, the method of applying a reverse bias voltage to diodes 104 and 106 of the physically non-replicable function generator structure 40 can be referenced to the method of applying a reverse bias voltage to diodes 100 and 102 of the physically non-replicable function generator structure 10, and its description is omitted here.

[0042] Furthermore, the method for extracting the physically non-replicable function generator structure 40 can be referred to the method for extracting the physically non-replicable function generator structure 20, and its description is omitted here.

[0043] In summary, in some embodiments of the physically uncopyable function generator structure, the first anode of the first diode is coupled to the second anode of the second diode, the first fuse is coupled to the first cathode of the first diode, and the second fuse is coupled to the second cathode of the second diode. Therefore, when a reverse bias is applied to the first diode and the second diode, either the first diode or the second diode will randomly collapse, randomly causing the first fuse or the second fuse to blow, thereby generating a random code. In other embodiments of the physically uncopyable function generator structure, the first cathode of the first diode is coupled to the second cathode of the second diode, the first fuse is coupled to the first anode of the first diode, and the second fuse is coupled to the second anode of the second diode. Therefore, when a reverse bias is applied to the first diode and the second diode, either the first diode or the second diode will randomly collapse, randomly causing the first fuse or the second fuse to blow, thereby generating a random code.

[0044] Although the present invention has been disclosed above by way of embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims. [Simplified Explanation of the Diagram]

[0016] Figure 1 is a circuit diagram of a physically uncopyable function generator structure according to some embodiments of the present invention. Figure 2 is a circuit diagram of a physically uncopyable function generator structure according to other embodiments of the present invention. Figure 3 is a circuit diagram of a physically uncopyable function generator structure according to other embodiments of the present invention. Figure 4 is a circuit diagram of a physically uncopyable function generator structure according to other embodiments of the present invention. Figure 5 is a circuit diagram of a physically uncopyable function generator structure according to other embodiments of the present invention. Figure 6 is a circuit diagram of a physically uncopyable function generator structure according to other embodiments of the present invention. Figure 7 is a circuit diagram of a physically uncopyable function generator structure according to other embodiments of the present invention. Figure 8 is a circuit diagram of a physically uncopyable function generator structure according to other embodiments of the present invention. Figure 9 is a circuit diagram of a physically uncopyable function generator structure according to other embodiments of the present invention. Figure 10 is a circuit diagram of a physically uncopyable function generator structure according to other embodiments of the present invention. Figure 11 is a circuit diagram of a physically uncopyable function generator structure according to other embodiments of the present invention. Figure 12 is a circuit diagram of a physically uncopyable function generator structure according to other embodiments of the present invention.

Claims

1. A physically non-replicable function generator structure, comprising: The first diode includes a first anode and a first cathode; The second diode includes a second anode and a second cathode, wherein the first anode is coupled to the second anode, and the first anode and the second anode are coupled to a first voltage; a first fuse is coupled to the first cathode; And a second fuse coupled to the second cathode, wherein the first cathode and the second cathode are respectively coupled to a second voltage via the first fuse and the second fuse, and the second voltage is greater than the first voltage, so as to cause the first diode or the second diode to collapse.

2. The physically non-replicable function generator structure as described in claim 1, wherein the first diode and the second diode are both PN diodes or both Schottky diodes.

3. The physically non-replicable function generator structure as described in claim 1, further comprising: A transistor, wherein the transistor is coupled to the first cathode and the first fuse.

4. The physically non-replicable function generator structure as described in claim 1, further comprising: The third diode includes a third anode and a third cathode, wherein the third cathode is coupled to the first cathode, the third anode is coupled to the first fuse, and the first diode is coupled to the first fuse via the third diode; And a fourth diode, including a fourth anode and a fourth cathode, wherein the fourth cathode is coupled to the second cathode, the fourth anode is coupled to the second fuse, and the second diode is coupled to the second fuse via the fourth diode.

5. The physically non-replicable function generator structure as described in claim 4, further comprising: A transistor, wherein the transistor is coupled to the third anode and the first fuse.

6. A physically non-replicable function generator structure, comprising: The first diode includes a first anode and a first cathode; The second diode includes a second anode and a second cathode, wherein the first cathode is coupled to the second cathode, and the first cathode and the second cathode are coupled to a first voltage; a first fuse is coupled to the first anode; And a second fuse coupled to the second anode, wherein the first anode and the second anode are respectively coupled to a second voltage via the first fuse and the second fuse, and the first voltage is greater than the second voltage, so as to cause the first diode or the second diode to collapse.

7. The physically non-replicable function generator structure as described in claim 6, wherein the first diode and the second diode are both PN diodes or both Schottky diodes.

8. The physically non-replicable function generator structure as described in claim 6, further comprising: A transistor, wherein the transistor is coupled to the first anode and the first fuse.

9. The physically uncopyable function generator structure as described in claim 6, further comprising: The third diode includes a third anode and a third cathode, wherein the third anode is coupled to the first anode, the third cathode is coupled to the first fuse, and the first diode is coupled to the first fuse via the third diode; And a fourth diode, including a fourth anode and a fourth cathode, wherein the fourth anode is coupled to the second anode, the fourth cathode is coupled to the second fuse, and the second diode is coupled to the second fuse via the fourth diode.

10. The physically uncopyable function generator architecture as described in claim 9, further comprising: A transistor, wherein the transistor is coupled to the third cathode and the first fuse.

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