Substrate processing apparatus

Abstract

In a substrate processing apparatus that performs a predetermined process on a substrate in a processing chamber where the interior is a vacuum, the objective of this invention is to reduce the amount of microparticles flowing into the vacuum preparation chamber. The substrate processing apparatus 1, as a solution of this invention, performs a predetermined process on a substrate S in a processing chamber 4 where the interior is a vacuum. The substrate processing apparatus 1 includes: a vacuum preparation chamber 6; a valve housing chamber 10 adjacent to the vacuum preparation chamber 6 and housing a first valve body; a first transport path 12 having a first opening 12a communicating with the valve housing chamber 10 for the substrate S to pass through; a second transport path 13 having a second opening 13a communicating with the valve housing chamber 10 and a third opening 13b communicating with the vacuum preparation chamber 6 for the substrate S to pass through; a first vacuum exhaust path 9a communicating with the valve housing chamber 10 to exhaust the vacuum from the valve housing chamber 10; and a second vacuum exhaust path 9b communicating with the vacuum preparation chamber 6 to exhaust the vacuum from the vacuum preparation chamber; the first opening 12a is opened and closed by the first valve body 11a.

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus for performing a predetermined process on a substrate in a processing chamber that is internally vacuumed. [Previous Technology]

[0002] Regarding substrate processing apparatus used in flat panel display manufacturing and semiconductor manufacturing processes, there is an ion implantation apparatus disclosed in Patent Document 1. This ion implantation apparatus includes an ion source, a mass analysis electromagnet, and a processing chamber with an internal vacuum environment. An ion beam is irradiated onto the substrate in the processing chamber to perform ion implantation. In this ion implantation apparatus, the ion beam is extracted from plasma generated inside the ion source, and after removing unwanted ions by the mass analysis electromagnet, it is introduced into the processing chamber.

[0003] This ion implantation apparatus further includes a transport chamber adjacent to the processing chamber and two vacuum preparation chambers adjacent to the transport chamber. Furthermore, each vacuum preparation chamber has an opening for substrate exchange with the transport chamber and an opening for substrate exchange with the outside. This ion implantation apparatus further includes a gate valve device for opening and closing these openings.

[0004] In this ion implantation apparatus, the substrate is first moved from the outside into one of the vacuum preparation chambers, and then transported to the processing chamber via a transport chamber. The substrate that has been implanted with ions in the processing chamber is then transported again via a transport chamber to one or the other of the vacuum preparation chambers, and then moved out.

[0004] [Previous Technical Documents]

[0004] [Patent Documents]

[0005] Patent Document 1: Japanese Patent Publication No. 2017-022061

[0006] In the ion implantation apparatus of Patent Document 1, after the substrate is moved into the vacuum preparation chamber from the outside, a gate valve device is activated to close the opening connecting the vacuum preparation chamber to the outside. Then, the vacuum preparation chamber is evacuated. At this time, microparticles generated within the gate valve device due to the activation of the gate valve device, etc., flow into the vacuum preparation chamber with the airflow generated by the evacuation of the vacuum preparation chamber and adhere to the substrate. Therefore, the ion implantation apparatus of Patent Document 1 may cause poor ion implantation processing due to these microparticles adhering to the substrate.

[0007] The present invention is intended to solve the above-mentioned problems, and aims to reduce the microparticles flowing into the vacuum preparation chamber.

[0008] The substrate processing apparatus of the present invention is configured to perform a predetermined processing on a substrate in a processing chamber that is internally vacuumed. The substrate processing apparatus includes: a vacuum preparation chamber; a valve body receiving chamber adjacent to the vacuum preparation chamber and housing a first valve body; a first transport path having a first opening communicating with the valve body receiving chamber for the substrate to pass through; a second transport path having a second opening communicating with the valve body receiving chamber and a third opening communicating with the vacuum preparation chamber for the substrate to pass through; a first vacuum exhaust path communicating with the valve body receiving chamber to exhaust the vacuum from the valve body receiving chamber; and a second vacuum exhaust path communicating with the vacuum preparation chamber to exhaust the vacuum from the vacuum preparation chamber; the first opening is opened and closed by the first valve body.

[0009] According to this configuration, the valve body housing chamber and the vacuum preparation chamber are evacuated through a first vacuum exhaust path and a second vacuum exhaust path, respectively. Assuming that the valve body housing chamber and the vacuum preparation chamber are evacuated only through the second vacuum exhaust path, the gas system in the valve body housing chamber flows into the vacuum preparation chamber through the second conveying path and then exhausts through the second vacuum exhaust path. At this time, microparticles generated in the valve body housing chamber due to the operation of the first valve body, etc., will move into the vacuum preparation chamber along with the flow of gas from the valve body housing chamber toward the vacuum preparation chamber.

[0009] In contrast, according to the configuration of the present invention, since the valve body receiving chamber and the vacuum preparation chamber are respectively evacuated through a first vacuum exhaust path and a second vacuum exhaust path, the flow of gas from the valve body receiving chamber to the vacuum preparation chamber can be suppressed. As a result, the inflow of microparticles present in the valve body receiving chamber into the vacuum preparation chamber can be suppressed. Furthermore, at least a portion of the microparticles originally present in the valve body receiving chamber are discharged to the outside of the valve body receiving chamber through the first vacuum exhaust path.

[0010] Furthermore, the substrate processing apparatus of the present invention may also be configured to have a second valve body housed in the aforementioned valve body housing chamber, wherein the aforementioned second opening is opened and closed by the aforementioned second valve body.

[0011] According to this configuration, the first valve body closes the first opening, and the second valve body closes the second opening, thereby sealing the first conveying path and the second conveying path respectively. That is, the internal space of the valve body receiving chamber is isolated from the vacuum preparation chamber. Therefore, the vacuum preparation chamber and the valve body receiving chamber are vacuumed while the internal spaces of the valve body receiving chamber and the vacuum preparation chamber are isolated from each other.

[0011] As a result, the flow of microparticles present in the valve body containment chamber into the vacuum preparation chamber is further suppressed.

[0012] In addition, the substrate processing apparatus of the present invention may also be configured such that the valve body receiving chamber has a vent that communicates with the first vacuum exhaust path, and the vent is located below the first opening and the second opening.

[0013] According to this configuration, during vacuum exhaust of the valve body housing chamber, the gas system inside the valve body housing chamber flows downward and is discharged outside the valve body housing chamber through a vent located below the first and second openings. Therefore, microparticles generated inside the valve body housing chamber are less likely to be stirred up within the valve body housing chamber, and the retention of these microparticles near the first and second openings is suppressed. Consequently, the inflow of these microparticles from the valve body housing chamber into the vacuum preparation chamber is further suppressed.

[0014] Furthermore, the substrate processing apparatus of the present invention may also be configured to further include a vacuum pump for venting the vacuum preparation chamber and the valve body receiving chamber, wherein the first vacuum exhaust path and the second vacuum exhaust path meet and are connected to the vacuum pump along their respective paths.

[0015] Based on this configuration, since the first vacuum exhaust path and the second vacuum exhaust path meet and are connected to the vacuum pump in their respective paths, the vacuum preparation chamber and the valve body receiving chamber can be evacuated by a single vacuum pump.

[0016] Furthermore, the substrate processing apparatus of the present invention may also be configured to further include: a first gas supply path for supplying gas flow to open the valve body receiving chamber to the atmosphere; and a gas supply section connected to the first gas supply path and supplying the gas thereon; the first gas supply path is connected to the first vacuum exhaust path at a confluence section provided on the way from the gas supply section to the valve body receiving chamber, and the gas system sequentially passes through the area of ​​the confluence section and a part of the first vacuum exhaust path to reach the valve body receiving chamber.

[0017] Furthermore, the substrate processing apparatus of the present invention may also be configured to further include: a vacuum pump connected to the aforementioned first vacuum exhaust path; and a dust collection unit for capturing microparticles passing through the aforementioned first vacuum exhaust path; the aforementioned dust collection unit is disposed in the aforementioned confluence portion of the aforementioned first vacuum exhaust path along the route to the aforementioned vacuum pump.

[0018] Based on this configuration, particles passing through the first vacuum exhaust path can be captured by the dust collection unit. Furthermore, the dust collection unit is located in the first vacuum exhaust path, between the confluence point and the vacuum pump. Therefore, even if the first gas supply path converges with the first vacuum exhaust path in the middle, when the atmosphere in the valve body housing chamber is open, the gas used for atmospheric opening will not pass through the dust collection unit.

[0019] Furthermore, the substrate processing apparatus of the present invention may also be configured to further include: a first gas supply path for gas flow that allows the aforementioned valve body receiving chamber to be atmospherically opened, wherein the aforementioned first vacuum exhaust path and the aforementioned first gas supply path are provided independently of each other.

[0020] When the first vacuum exhaust path and the first gas supply path are shared areas that are part of each other, for example, there may be a situation where microparticles that are not discharged to the outside during vacuum exhaust of the valve body housing chamber and remain in the first vacuum exhaust path may return to the valve body housing chamber when the atmosphere in the valve body housing chamber is opened. In contrast, according to the above configuration, since the first vacuum exhaust path and the first gas supply path are set independently of each other, the situation where microparticles return to the valve body housing chamber when the atmosphere in the valve body housing chamber is opened will not occur, and the microparticles in the valve body housing chamber can be discharged to the outside more reliably.

[0021] According to the present invention, the amount of microparticles flowing into the vacuum preparation chamber can be reduced. [Simplified Explanation of the Diagram]

[0022] FIG1 is a schematic diagram showing a substrate processing apparatus of the first embodiment of the present invention.

[0022] Figure 2 is a schematic diagram showing the vacuum preparation chamber, its surroundings, and piping structure in the first embodiment.

[0022] Figure 3 is a cross-sectional view of the vacuum preparation chamber and the first gate valve in the first embodiment.

[0022] Figure 4 shows a longitudinal sectional view of the vacuum preparation chamber and the first gate valve in the first embodiment shown by line X1-X1 in Figure 3.

[0022] Figure 5 shows a longitudinal section of the vacuum preparation chamber and the first gate valve in the first embodiment shown by line Y1-Y1 in Figure 3.

[0022] Figure 6 is a schematic diagram showing the vacuum preparation chamber, its periphery, and piping structure in the substrate processing apparatus of the second embodiment of the present invention.

[0022] Figure 7 is a schematic diagram showing the vacuum preparation chamber, its periphery, and piping structure in the substrate processing apparatus of the third embodiment of the present invention.

[0022] Figure 8 is a schematic diagram showing a modified example of the piping structure in the third embodiment of the present invention.

Implementation Method

[0023] <First Implementation Type>

[0023] First, the substrate processing apparatus 1A of the first embodiment of the present invention will be described. Here, Figures 1 to 8 are made for the purpose of understanding the present invention, and the shape, length ratio, and scaling ratio of each constituent element in each figure may not be consistent.

[0024] FIG1 is a schematic diagram showing the substrate processing apparatus 1A of this embodiment.

[0024] The substrate processing apparatus 1A is an ion implantation apparatus used in flat panel display manufacturing processes to perform ion implantation on a substrate S that is to be processed. In this embodiment, the substrate S is a rectangular glass substrate.

[0024] Here, the ion implantation apparatus is an example of the substrate processing apparatus of the present invention. If the substrate is to be processed in a processing chamber where the interior is a vacuum, then the substrate processing apparatus of the present invention can be any apparatus. Furthermore, the substrate S is not limited to a glass substrate, and the shape of the substrate S is not limited to a specific shape.

[0025] As shown in Figure 1, the substrate processing apparatus 1A includes an ion source 2, a mass analysis magnet 3, and a processing chamber 4 that can be made into a vacuum. In the ion source 2, a plasma is generated from the raw material gas introduced into the interior of the ion source 2, and an ion beam IB is extracted from this plasma. The ion beam IB extracted from the ion source 2 is introduced into the interior of the processing chamber 4 after the mass analysis magnet 3 separates and removes the unwanted ion mass.

[0026] In the processing chamber 4, the substrate S that has been moved into the processing chamber 4 is irradiated with an ion beam IB to inject predetermined ions into the substrate S.

[0027] More specifically, after the substrate S is moved into the processing chamber 4 with the surface to be irradiated by the ion beam IB roughly parallel to the horizontal direction, it is first rotated and erected by a conveying mechanism (not shown) so that the surface to be irradiated is roughly parallel to the vertical direction.

[0028] Subsequently, the substrate S is transported by the conveying mechanism to cut across the ion beam IB. That is, in the processing chamber 4, the substrate S moves to cut across the ion beam IB, thereby irradiating the surface of the substrate S to be processed with the ion beam IB.

[0028] Here, the state in which the interior of the processing chamber 4 is a vacuum means that the interior of the processing chamber 4 is at a vacuum level that allows for predetermined processing. In this embodiment, the interior of the processing chamber 4 is maintained at a vacuum level that allows for ion implantation into the substrate S.

[0029] Figure 2 is a schematic diagram of the vacuum preparation chamber 6 of the display substrate processing apparatus 1A, its surroundings, and the piping structure 9A described later.

[0029] As shown in Figures 1 and 2, the substrate processing apparatus 1A includes a transfer chamber 5 adjacent to the processing chamber 4 and two vacuum preparation chambers 6 respectively connected to the transfer chamber 5. The interior of the transfer chamber 5 can be in a vacuum state.

[0030] The substrate processing apparatus 1A further includes two first gate valves 7, which are respectively disposed between the transfer chamber 5 and the vacuum preparation chamber 6. Furthermore, the substrate processing apparatus 1A also includes two second gate valves 8, which are respectively disposed adjacent to a side of each vacuum preparation chamber 6 that is different from the side on which the aforementioned first gate valves 7 are disposed. The vacuum preparation chamber 6 is also referred to as a load-lock chamber, which can switch its interior to an atmospheric state and a vacuum state.

[0031] Figure 2 shows a piping structure 9A connecting one of the vacuum preparation chambers 6 and one of the first gate valves 7. However, in this embodiment, the other vacuum preparation chamber 6 and the other first gate valve 7 are also connected to the piping structure 9A.

[0032] Figure 3 is a cross-sectional view showing the vacuum preparation chamber 6 and the first gate valve 7. Figure 4 is a longitudinal section view along line X1-X1 in Figure 3. Figure 5 is a longitudinal section view along line Y1-Y1 in Figure 3. Figures 3 and 5 show the first gate valve 7 in the open state described later. Figure 4 shows the first gate valve 7 in the closed state described later.

[0033] In Figures 3 to 5, in addition to the vacuum preparation chamber 6 and the first gate valve 7, a part of the piping structure 9A that allows gas to flow when the vacuum preparation chamber 6 and the first gate valve 7 are vacuumed and when the atmosphere is open is also shown.

[0034] The vacuum preparation chamber 6 is formed as a whole by six side walls and is generally in the shape of a cuboid. As shown in Figure 3, the two side walls of the vacuum preparation chamber 6 form a first through part 6a and a second through part 6b, which respectively penetrate the side walls to allow the substrate S to pass through.

[0035] The second gate valve 8 is configured to be adjacent to the side of the second through portion 6b formed in the vacuum preparation chamber 6, but the second gate valve 8 is not shown in FIG3. The second gate valve 8 is configured to open and close the second through portion 6b by means of the valve body (not shown) of the second gate valve 8.

[0036] As shown in FIG3, the first gate valve 7 is constructed by a valve body receiving chamber 10 and a valve body device 11, which are integrally formed in a generally rectangular parallelepiped shape. The valve body receiving chamber 10 has a third through portion 10a and a fourth through portion 10b formed on the opposing side walls of the valve body receiving chamber 10.

[0037] In this embodiment, the valve body receiving chamber 10 is configured to be adjacent to the side wall in the vacuum preparation chamber 6 where the first through-section 6a is formed. The conveying chamber 5 is configured to be adjacent to the side wall in the valve body receiving chamber 10 where the fourth through-section 10b is formed, although the conveying chamber 5 is not shown in Figures 3 to 5. The fourth through-section 10b connects to the internal space of the conveying chamber 5 and is configured as a first conveying path 12 through which the substrate S can pass.

[0038] In this embodiment, the first through portion 6a formed in the vacuum preparation chamber 6 and the third through portion 10a formed in the valve body receiving chamber 10 are connected to the interior of the vacuum preparation chamber 6 and the interior space of the valve body receiving chamber 10, forming a second transport path 13 through which the substrate S can pass.

[0039] The first conveying path 12 has a first opening 12a, which is connected to the valve body receiving chamber 10 formed at one end of the first conveying path 12. In this embodiment, the first opening 12a is an opening formed in the fourth through portion 10b of the inner wall surface of the valve body receiving chamber 10.

[0040] The second conveying path 13 has a second opening 13a and a third opening 13b. The second opening 13a is formed at one end of the second conveying path 13 and connects to the valve body receiving chamber 10. The third opening 13b is formed at the other end of the second conveying path 13 and connects to the vacuum preparation chamber 6. In this embodiment, the second opening 13a is an opening in the third through-section 10a on the inner wall side of the valve body receiving chamber 10. Furthermore, the third opening 13b is an opening in the first through-section 6a on the inner wall side of the vacuum preparation chamber 6.

[0041] As shown in FIG4, the valve body device 11 is composed of a first valve body 11a, a second valve body 11b, and a valve body drive unit 11c that actuates the first valve body 11a and the second valve body 11b. The first valve body 11a and the second valve body 11b are both housed inside the valve body housing chamber 10 and operate inside the valve body housing chamber 10.

[0042] The first valve body 11a is operated by the valve body drive unit 11c to open and close the first opening 12a. In addition, the second valve body 11b is operated by the valve body drive unit 11c to open and close the second opening 13a.

[0043] In this embodiment, the closed state of the first gate valve 7 refers to the state in which the first valve body 11a and the second valve body 11b respectively close the first opening 12a and the second opening 13a. In addition, the open state of the first gate valve 7 refers to the state in which the first valve body 11a and the second valve body 11b do not close the first opening 12a and the second opening 13a, and the substrate S can pass through the valve body receiving chamber 10.

[0044] Figure 1 shows the path of the substrate S, which is moved into one vacuum preparation chamber 6, is ion-implanted in the processing chamber 4, and then returns to the other vacuum preparation chamber 6 and is moved out of the substrate processing apparatus 1A. Here, the substrate processing apparatus 1A can also be configured such that the substrate S, which is moved into one vacuum preparation chamber 6, is ion-implanted, and then moved out of the other vacuum preparation chamber 6.

[0045] As shown in FIG1, the substrate S to be processed by the substrate processing apparatus 1A is first moved from outside the substrate processing apparatus 1A into one of the vacuum preparation chambers 6 through the second gate valve 8. As shown in FIG4, when the substrate S has been moved from outside the substrate processing apparatus 1A into the vacuum preparation chamber 6, the first gate valve 7 is in a closed state.

[0046] After the substrate S is moved into the vacuum preparation chamber 6, the second gate valve 8 is closed, and the vacuum preparation chamber 6 is evacuated through the piping structure 9A.

[0047] When the first gate valve 7 is in the closed state, the first valve body 11a airtightly seals the first opening 12a, but the second valve body 11b does not necessarily airtightly seal the second opening 13a. In this embodiment, the second valve body 11b is configured to cover the entire area of ​​the second opening 13a, but it can also be configured to cover only a part of the second opening 13a.

[0048] After the substrate S is moved into the vacuum preparation chamber 6, the second gate valve 8 is activated, and the second through-section 6b of the vacuum preparation chamber 6 is sealed airtightly by the valve body (not shown) of the second gate valve 8. Furthermore, the vacuum inside the vacuum preparation chamber 6 and the valve body receiving chamber 10 is vented by the piping structure 9A.

[0049] After that, the first gate valve 7 is opened by the valve body drive unit 11c, as shown in FIG1, so that the substrate S is transported from the vacuum preparation chamber 6 through the first transport path 12 and the second transport path 13, and through the transport chamber 5 to the processing chamber 4.

[0050] When the valve body drive unit 11c is driven from the closed state of the first gate valve 7 shown in FIG4, the first valve body 11a moves slightly backward relative to the opening direction of the first opening 12a and leaves the first opening 12a, and then moves downward.

[0051] Furthermore, the second valve body 11b moves slightly backward relative to the opening direction of the second opening 13a and exits from the second opening 13a, and then moves downward. In this way, the first gate valve 7 becomes the open state shown in FIG. 5, so that the substrate S can pass through the first transport path 12 and the second transport path 13.

[0052] After ion implantation is performed on the substrate S in the processing chamber 4, as shown in FIG1, the substrate S is transported to the vacuum preparation chamber 6 via the transport chamber 5 through the first gate valve 7 which is in an open state. After the substrate S is transported into the vacuum preparation chamber 6, the first gate valve 7 becomes closed again, and the interior of the vacuum preparation chamber 6 and the interior of the valve body receiving chamber 10 are opened by the piping structure 9A.

[0053] After that, the second gate valve 8 is opened, so that the substrate S is moved out of the substrate processing device 1A through the second gate valve 8.

[0054] When the first gate valve 7 is in the open state, the valve body drive unit 11c is driven, causing the first valve body 11a to move upward and then advance towards the opening direction of the first opening 12a, thereby sealing the first opening 12a airtightly. Simultaneously, the second valve body 11b moves upward and then advances towards the opening direction of the second opening 13a, thereby sealing the second opening 13a. Thus, the first gate valve 7 is once again in the closed state.

[0055] As shown in Figures 3 and 4, the valve body receiving chamber 10 has two first vents 10c, 10c, which are formed to penetrate a pair of opposing first sidewalls 10d, 10d of the valve body receiving chamber 10. The two first vents 10c, 10c are both located below the first opening 12a and the second opening 13a.

[0056] More specifically, as shown in Figure 4, the first vent 10c is located below the first valve body 11a and the second valve body 11b when the first gate valve 7 is in the closed state. That is, the first vent 10c is located below the first valve body 11a when the first opening 12a is closed and the second valve body 11b when the second opening 13a is closed.

[0057] In this embodiment, the two first vents 10c are formed on a pair of first sidewalls 10d and 10d respectively. However, the formation position of the first vents 10c and the number of first vents 10c are not limited to this. For example, the first vents 10c can also be formed on the second sidewall 10e, which is equivalent to the bottom wall of the valve body receiving chamber 10 shown in FIG4 and FIG5.

[0058] Furthermore, the first vent 10c may not necessarily be located below the first opening 12a and the second opening 13a. For example, it may also be formed on the third side wall 10f of the top wall of the valve body receiving chamber 10. In addition, the first vent 10c may also be formed on the side wall of the valve body receiving chamber 10 where the fourth through portion 10b is formed.

[0059] As shown in Figures 3 and 5, the vacuum preparation chamber 6 has a second vent 6c, which is formed as the bottom wall of the vacuum preparation chamber 6.

[0060] As shown in Figure 2, the piping structure 9A in this embodiment includes: a first vacuum exhaust path 9a, which is used to exhaust the valve body receiving chamber 10 under vacuum; and a second vacuum exhaust path 9b, which is used to exhaust the vacuum preparation chamber 6 under vacuum.

[0061] As shown in Figures 3 and 5, the first vacuum exhaust path 9a is connected to the valve body receiving chamber 10 via the first vent 10c, thus communicating with the interior of the valve body receiving chamber 10. The second vacuum exhaust path 9b is connected to the vacuum preparation chamber 6 via the second vent 6c, thus communicating with the interior of the vacuum preparation chamber 6.

[0062] As shown in Figure 2, the piping structure 9A further includes a vacuum pump 9c, which is connected to the first vacuum exhaust path 9a and the second vacuum exhaust path 9b, and is used to exhaust the valve body receiving chamber 10 and the vacuum preparation chamber 6.

[0063] In this embodiment, the first vacuum exhaust path 9a refers to the path from the first vent 10c to the vacuum pump 9c. Furthermore, in this embodiment, the second vacuum exhaust path 9b refers to the path from the second vent 6c to the vacuum pump 9c.

[0064] In this embodiment, the first vacuum exhaust path 9a and the second vacuum exhaust path 9b converge along their respective paths to connect to the vacuum pump 9c. More specifically, as shown in FIG5, the first vacuum exhaust path 9a and the second vacuum exhaust path 9b converge at a first convergence portion 9i located below the second vent 6c. That is, the area from the first convergence portion 9i in the first vacuum exhaust path 9a to the vacuum pump 9c and the area from the first convergence portion 9i in the second vacuum exhaust path 9b to the vacuum pump 9c are formed by a common piping component.

[0065] Since the first vacuum exhaust path 9a and the second vacuum exhaust path 9b meet at the first meeting point 9i and are connected to the vacuum pump 9c, the piping structure 9A can use a vacuum pump 9c to vacuum exhaust the vacuum preparation chamber 6 and the valve body receiving chamber 10 respectively.

[0066] As shown in Figure 2, the piping structure 9A further includes a gas supply section 9d, which supplies dry air, nitrogen, or other gases to allow the vacuum preparation chamber 6 and the valve body housing chamber 10 to be atmospherically open. The piping structure 9A further includes: a first gas supply path 9e, for supplying the gas from the gas supply section 9d to the valve body housing chamber 10; and a second gas supply path 9f, for supplying the gas from the gas supply section 9d to the vacuum preparation chamber 6.

[0067] That is, the first gas supply path 9e refers to the path from the gas supply section 9d to the valve body receiving chamber 10. The gas system supplied from the first gas supply path 9e flows through the first gas supply path 9e and then flows into the interior of the valve body receiving chamber 10, thereby opening the valve body receiving chamber 10 to the atmosphere.

[0068] In addition, the second gas supply path 9f refers to the path from the gas supply section 9d to the vacuum preparation chamber 6. The gas system supplied from the first gas supply path 9e flows through the second gas supply path 9f and then into the vacuum preparation chamber 6, thereby opening the vacuum preparation chamber 6 to the atmosphere.

[0069] As shown in Figures 3 and 5, in this embodiment, the first air supply path 9e is joined to the first vacuum exhaust path 9a at the second junction 9g. That is, the area from the second junction 9g to the first vent 10c between the first vacuum exhaust path 9a and the first air supply path 9e is formed by a common piping component.

[0070] Therefore, more specifically, the first gas supply path 9e refers to the path from the gas supply unit 9d to the first vent 10c of the valve body receiving chamber 10 via the second confluence portion 9g. The gas system supplied by the gas supply unit 9d flows into the valve body receiving chamber 10 from the first vent 10c through the area of ​​the aforementioned second confluence portion 9g and a portion of the first vacuum exhaust path 9a.

[0071] As shown in Figures 3 and 4, the vacuum preparation chamber 6 has a third vent 6d formed on the bottom wall of the vacuum preparation chamber 6, and a second gas supply path 9f is connected to the third vent 6d. More specifically, the second gas supply path 9f refers to the path from the gas supply section 9d to the third vent 6d of the vacuum preparation chamber 6, and the gas supplied by the gas supply section 9d flows through the second gas supply path 9f and flows into the vacuum preparation chamber 6 from the third vent 6d.

[0072] The second gas supply path 9f can also be configured to meet the second vacuum exhaust path 9b en route. In this case, the gas system used to open the vacuum preparation chamber 6 to the atmosphere is introduced into the vacuum preparation chamber 6 from the second vent 6c, so it is not necessary to form a third vent 6d.

[0073] The valve body receiving chamber 10 of the substrate processing apparatus 1A is adjacent to the vacuum preparation chamber 6 and constitutes the first gate valve 7. In this embodiment, the valve body receiving chamber 10 is disposed between the vacuum preparation chamber 6 and the transfer chamber 5, but the position of the valve body receiving chamber 10 is not limited to this. The valve body receiving chamber 10 may also be disposed, for example, between the vacuum preparation chamber 6 and the processing chamber 4. In this case, the substrate processing apparatus 1A does not have the transfer chamber 5, and the substrate S is directly transferred from the vacuum preparation chamber 6 to the processing chamber 4 through the first gate valve 7.

[0074] The substrate processing apparatus 1A of this embodiment includes a first valve body 11a and a second valve body 11b in the valve body receiving chamber 10, although it is not necessary to provide a second valve body 11b. In this case, the valve body device 11 is composed of a first valve body 11a and a valve body driving unit 11c.

[0075] Furthermore, in this embodiment, the first transport path 12 is formed by the fourth through portion 10b formed in the valve body receiving chamber 10, but the configuration of the first transport path 12 is not limited to this. The first transport path 12 may also be formed, for example, by the fourth through portion 10b and the through portion formed in the side wall of the transport chamber 5.

[0076] In this embodiment, the second transport path 13 is formed by the first through portion 6a formed in the vacuum preparation chamber 6 and the third through portion 10a formed in the valve body receiving chamber 10. However, the configuration of the second transport path 13 is not limited to this. For example, when the vacuum preparation chamber 6 and the valve body receiving chamber 10 are integrally formed, the second transport path 13 can also be formed by the through portion formed in the partition wall used to separate the internal space of the vacuum preparation chamber 6 from the internal space of the valve body receiving chamber 10.

[0077] Microparticles are generated inside the valve body housing chamber 10 due to the repeated predetermined actions of the first valve body 11a and the second valve body 11b driven by the valve body drive unit 11c.

[0078] In the substrate processing apparatus 1A of this embodiment, the valve body receiving chamber 10 and the vacuum preparation chamber 6 are respectively vacuum-vented via the first vacuum exhaust path 9a and the second vacuum exhaust path 9b. Assuming that the valve body receiving chamber 10 and the vacuum preparation chamber 6 are vacuum-vented only via the second vacuum exhaust path 9b, the gas system in the valve body receiving chamber 10 flows into the vacuum preparation chamber 6 via the second conveying path 13 and is then exhausted via the second vacuum exhaust path 9b. At this time, microparticles present in the valve body receiving chamber 10 will move to the vacuum preparation chamber 6 along with the flow of gas from the valve body receiving chamber 10 toward the vacuum preparation chamber 6.

[0079] In contrast, in the substrate processing apparatus 1A, since the valve body receiving chamber 10 and the vacuum preparation chamber 6 are respectively evacuated through the first vacuum exhaust path 9a and the second vacuum exhaust path 9b, the flow of gas from the valve body receiving chamber 10 to the vacuum preparation chamber 6 can be suppressed. Therefore, the inflow of microparticles present in the valve body receiving chamber 10 into the vacuum preparation chamber 6 can be suppressed, reducing the number of microparticles flowing into the vacuum preparation chamber 6. As a result, the processing defects of the substrate S in the processing chamber 4 are reduced.

[0080] In addition, at least a portion of the microparticles originally present in the valve body containment chamber 10 are discharged to the outside of the valve body containment chamber 10 by the gas flow caused by the vacuum exhaust of the valve body containment chamber 10 through the first vacuum exhaust path 9a.

[0081] In the substrate processing apparatus 1A of this embodiment, the first valve body 11a closes the first opening 12a, and the second valve body 11b closes the second opening 13a. Thus, the first conveying path 12 and the second conveying path 13 are closed by the first valve body 11a and the second valve body 11b respectively, that is, the internal space of the valve body receiving chamber 10 is isolated from the vacuum preparation chamber 6. Therefore, the vacuum preparation chamber 6 and the valve body receiving chamber 10 are vacuum-exhausted separately while the internal spaces of the valve body receiving chamber 10 and the vacuum preparation chamber 6 are isolated from each other, thereby further suppressing the inflow of microparticles from the valve body receiving chamber 10 into the vacuum preparation chamber 6.

[0082] In the substrate processing apparatus 1A of this embodiment, the second valve body 11b blocks the second opening 13a, thereby preventing microparticles from flowing into the vacuum preparation chamber 6 through the second transport path 13. The second valve body 11b can prevent at least a portion of the microparticles generated in the valve body receiving chamber 10 from flowing into the vacuum preparation chamber 6 through the second transport path 13. Therefore, the second valve body 11b can be configured to cover part or all of the second opening 13a without the need to hermetically seal the second opening 13a.

[0083] In the substrate processing apparatus 1A of this embodiment, the valve body receiving chamber 10 has a first vent 10c that communicates with the first vacuum exhaust path 9a. The first vent 10c is located below the first opening 12a and the second opening 13a. More specifically, the first vent 10c is located below the first valve body 11a when the first opening 12a is closed and the second valve body 11b when the second opening 13a is closed.

[0084] During the vacuum exhaust of the valve body housing chamber 10, the gas system inside the valve body housing chamber 10 flows downward and is discharged outside the valve body housing chamber 10 from the first vent 10c located below the first opening 12a and the second opening 13a. Therefore, the microparticles generated inside the valve body housing chamber 10 are less likely to be stirred up inside the valve body housing chamber 10, and the retention of microparticles near the first opening 12a and the second opening 13a is suppressed. As a result, the inflow of microparticles from the valve body housing chamber 10 into the vacuum preparation chamber 6 is further suppressed.

[0085] Furthermore, in the substrate processing apparatus 1A of this embodiment, the vacuum preparation chamber 6 and the valve body receiving chamber 10 are vacuum-exhausted while the internal space of the valve body receiving chamber 10 and the internal space of the vacuum preparation chamber 6 are isolated from each other. Therefore, it also prevents air containing moisture from flowing from the valve body receiving chamber 10 into the vacuum preparation chamber 6 during vacuum exhaust.

[0086] If the air flowing into the vacuum preparation chamber 6 contains moisture, it can be inferred that the moisture in the air will condense into tiny water droplets due to the thermal expansion caused by vacuum exhaust and adhere to the substrate S. Water droplets adhering to the substrate S may cause poor processing of the substrate S. In contrast, in the substrate processing apparatus 1A of this embodiment, since air is also prevented from flowing into the vacuum preparation chamber 6 from the valve body receiving chamber 10 during vacuum exhaust, water droplets are also prevented from adhering to the substrate S.

[0087] That is, in the substrate processing apparatus 1A of this embodiment, microparticles and water droplets can be suppressed from adhering to the substrate S at the same time, so compared with the past, the processing defects of the substrate S in the processing chamber 4 can be further reduced.

[0088] In this embodiment, the first gas supply path 9e is connected to the first vacuum exhaust path 9a via the second confluence part 9g. The gas system supplied by the gas supply part 9d passes through at least a portion of the first gas supply path 9e, the second confluence part 9g, and the first vacuum exhaust path 9a in sequence to reach the valve body receiving chamber 10.

[0089] Furthermore, as shown in Figures 3 and 5, the piping structure 9A in this embodiment further includes a dust collection section 9h, which captures microparticles discharged from the valve body receiving chamber 10 through the first vacuum exhaust path 9a along with the vacuum exhaust of the valve body receiving chamber 10. The dust collection section 9h in this embodiment is constructed by a dust collection filter, but it can be arbitrarily constructed if it can capture microparticles.

[0090] The dust collection unit 9h is located on the route from the second confluence section 9g in the first vacuum exhaust path 9a to the vacuum pump 9c. Therefore, as shown in this embodiment, even if the first gas supply path 9e converges with the first vacuum exhaust path 9a along the way, the gas used to open the atmosphere of the valve body housing 10 will not pass through the dust collection unit 9h when the atmosphere of the valve body housing 10 is open. With this configuration, the situation where the microparticles captured by the dust collection unit 9h return to the valve body housing 10 when the atmosphere of the valve body housing 10 is open can be avoided.

[0091] <Second Implementation Type>

[0091] FIG6 is a schematic diagram showing the vacuum preparation chamber 6, its periphery, and piping structure 9B in the substrate processing apparatus 1B of the second embodiment of the present invention. In addition, FIG7 is a schematic diagram showing the vacuum preparation chamber 6, its periphery, and piping structure 9C in the substrate processing apparatus 1C of the third embodiment of the present invention.

[0092] Both substrate processing apparatus 1B and substrate processing apparatus 1C are ion implantation devices, and have the same ion source 2, mass analysis magnet 3, processing chamber 4, and transfer chamber 5 as the substrate processing apparatus 1A of the first embodiment. That is, except for the configuration shown in FIG6 and FIG7, substrate processing apparatus 1B and substrate processing apparatus 1C have the same configuration as the substrate processing apparatus 1A of the first embodiment. In addition, in FIG6 and FIG7, the same symbols are used for components with the same functions as the substrate processing apparatus 1A of the first embodiment, and their descriptions are omitted.

[0093] Here, similar to the substrate processing apparatus 1A of the first embodiment, both the substrate processing apparatus 1B and the substrate processing apparatus 1C have two vacuum preparation chambers 6 arranged adjacent to the transfer chamber 5. Figures 6 and 7 only depict one of these vacuum preparation chambers 6, but the periphery of the other vacuum preparation chamber 6 is also the same as that shown in Figures 6 and 7.

[0094] As shown in FIG6, the substrate processing apparatus 1B of the second embodiment of the present invention has two first vents 10c, which are formed in the valve body receiving chamber 10 and connected to the first vacuum exhaust path 9a. In the substrate processing apparatus 1B, both first vents 10c are formed on the second side wall 10e, which corresponds to the bottom wall of the valve body receiving chamber 10 as shown in FIG4.

[0095] In the substrate processing apparatus 1B, since the first vent 10c is formed on the second sidewall 10e, compared with the substrate processing apparatus 1A of the first embodiment, when the atmosphere of the valve body receiving chamber 10 is open, the microparticles trapped below the valve body receiving chamber 10 are more easily discharged from the first vacuum exhaust path 9a.

[0096] Furthermore, the substrate processing apparatus 1B includes a piping structure 9B connecting the valve body receiving chamber 10 and the vacuum preparation chamber 6. The piping structure 9B includes: two vacuum pumps 9c; a first vacuum exhaust path 9a, which is a path from each of the first vents 10c of the valve body receiving chamber 10 to one of the vacuum pumps 9c; and a second vacuum exhaust path 9b, which is a path from the second vent 6c of the vacuum preparation chamber 6 to the other vacuum pump 9c.

[0097] The first vacuum exhaust path 9a and the second vacuum exhaust path 9b in the piping structure 9B are not connected along the way but are set up independently.

[0098] The substrate processing apparatus 1B first uses a vacuum pump 9c connected to the first vacuum exhaust path 9a to start vacuum exhaust of the valve body housing chamber 10 through the first vacuum exhaust path 9a. Then, after a predetermined time has elapsed, it uses a vacuum pump 9c connected to the second vacuum exhaust path 9b to start vacuum exhaust of the vacuum preparation chamber 6 through the second vacuum exhaust path 9b.

[0099] The aforementioned operation of the substrate processing apparatus 1B is performed after at least a portion of the microparticles in the valve body receiving chamber 10 are discharged from the first vacuum exhaust path 9a along with the vacuum exhaust in the valve body receiving chamber 10 before the vacuum exhaust in the vacuum preparation chamber 6 begins. Therefore, the number of microparticles flowing into the vacuum preparation chamber 6 from the valve body receiving chamber 10 is further reduced.

[0100] In addition, the substrate processing apparatus 1B may also start the vacuum exhaust of the valve body receiving chamber 10 by using the vacuum pump 9c connected to the first vacuum exhaust path 9a after starting the vacuum exhaust of the vacuum preparation chamber 6 by using the vacuum pump 9c connected to the second vacuum exhaust path 9b.

[0101] In addition, the piping structure 9B has: two gas supply sections 9d; a first gas supply path 9e, which is a path from one of the gas supply sections 9d to each of the first vents 10c of the valve body housing chamber 10; and a second gas supply path 9f, which is a path from the other gas supply section 9d to the second vent 6c of the vacuum preparation chamber 6.

[0102] In the second embodiment, the first air supply path 9e is connected to the first vacuum exhaust path 9a at the second junction 9g, and the area from the second junction 9g to each of the first air inlets 10c is formed by a piping component common to the first vacuum exhaust path 9a. Furthermore, in the second embodiment, the second air supply path 9f is connected to the second vacuum exhaust path 9b along its route.

[0103] In the piping structure 9B of the second embodiment, the first gas supply line 9e and the second gas supply line 9f are set independently without meeting in the middle and are respectively connected to different gas supply units 9d.

[0104] Therefore, the substrate processing apparatus 1B can start the atmospheric opening of the valve body housing chamber 10 by using the gas supply section 9d connected to the second gas supply section 9f after starting the atmospheric opening of the valve body housing chamber 10 by using the gas supply section 9d connected to the first gas supply section 9e.

[0105] In addition, the substrate processing apparatus 1B may also delay the opening of the atmosphere of the vacuum preparation chamber 6 by using the gas supply section 9d connected to the first gas supply section 9e after the vacuum preparation chamber 6 is opened by using the gas supply section 9d connected to the second gas supply section 9f.

[0106] Furthermore, in the piping structure 9B of the second embodiment, a dust collection section 9h is also arranged further downstream of the second junction 9g where the first vacuum exhaust path 9a and the first gas supply path 9e meet, that is, along the path from the second junction 9g to the vacuum pump 9c.

[0107] <Third Implementation Type>

[0107] As shown in FIG. 7, the substrate processing apparatus 1C of the third embodiment of the present invention has a first vent 10c, which is formed in the valve body receiving chamber 10 and connected to the first vacuum exhaust path 9a. In the substrate processing apparatus 1C, the first vent 10c is formed on the third side wall 10f, which corresponds to the top wall of the valve body receiving chamber 10 as shown in FIG. 4.

[0108] Furthermore, the substrate processing apparatus 1C includes a piping structure 9C connecting the valve body receiving chamber 10 and the vacuum preparation chamber 6. The piping structure 9C includes: two vacuum pumps 9c; a first vacuum exhaust path 9a, which is a path from the first vent 10c of the valve body receiving chamber 10 to one of the vacuum pumps 9c; and a second vacuum exhaust path 9b, which is a path from the second vent 6c of the vacuum preparation chamber 6 to the other vacuum pump 9c.

[0109] In the third embodiment, the first vacuum exhaust path 9a and the second vacuum exhaust path 9b are provided independently without converging along the way. Therefore, similar to the substrate processing apparatus 1B in the second embodiment, the substrate processing apparatus 1C can start vacuum exhaust of the vacuum preparation chamber 6 by using the vacuum pump 9c connected to the second vacuum exhaust path 9b after starting vacuum exhaust of the valve body receiving chamber 10 using the vacuum pump 9c connected to the first vacuum exhaust path 9a.

[0110] In addition, the substrate processing apparatus 1C may also start the vacuum exhaust of the valve body receiving chamber 10 by using the vacuum pump 9c connected to the first vacuum exhaust passage 9a after starting the vacuum exhaust of the vacuum preparation chamber 6 by using the vacuum pump 9c connected to the second vacuum exhaust passage 9b.

[0111] Furthermore, in the third embodiment, the third sidewall 10f, which corresponds to the top wall of the valve body receiving chamber 10 shown in FIG4, has a sixth opening 10g. The piping structure 9C in the third embodiment has: two gas supply sections 9d; a first gas supply path 9e, which is a path from one of the gas supply sections 9d to the sixth opening 10g of the valve body receiving chamber 10; and a second gas supply path 9f, which is a path from the other gas supply section 9d to the third vent 6d of the vacuum preparation chamber 6.

[0112] In the vacuum pump 9c of the third embodiment, the first gas supply path 9e and the second gas supply path 9f are independently provided without converging along the way, and are respectively connected to different gas supply sections 9d. Therefore, the substrate processing apparatus 1C can start the atmospheric opening of the valve body housing chamber 10 by using the gas supply section 9d connected to the first gas supply path 9e, and then delay the atmospheric opening of the vacuum preparation chamber 6 by using the gas supply section 9d connected to the second gas supply path 9f.

[0113] In addition, the substrate processing apparatus 1C may also delay the opening of the atmosphere of the vacuum preparation chamber 6 by using the gas supply section 9d connected to the first gas supply section 9e after the atmospheric opening of the vacuum preparation chamber 6 is started by using the gas supply section 9d connected to the second gas supply section 9f.

[0114] In the piping structure 9C of the third embodiment, the first vacuum exhaust path 9a and the first air supply path 9e are independently set up without converging along the way. Therefore, the dust collection unit 9h is not required in the third embodiment.

[0115] When the first vacuum exhaust path 9a and the first gas supply path 9e are configured to share a common area as part of each other, for example, there may be a situation where microparticles that are not discharged to the outside during the vacuum exhaust of the valve body housing chamber 10 and remain in the first vacuum exhaust path 9a may return to the valve body housing chamber 10 when the atmosphere of the valve body housing chamber 10 is opened.

[0116] In contrast, in the substrate processing apparatus 1C, the first vacuum exhaust path 9a and the first gas supply path 9e are provided independently of each other. Therefore, the situation described above, where microparticles return to the valve body housing chamber 10 when the atmosphere of the valve body housing chamber 10 is open, will not occur, and microparticles in the valve body housing chamber 10 can be discharged more reliably.

[0117] Furthermore, in the piping structure 9C of the third embodiment, the second vacuum exhaust path 9b and the second gas supply path 9f are set independently of each other without converging along the way. That is, in the piping structure 9C, the gas flow path during vacuum exhaust in the vacuum preparation chamber 6 and the gas flow path during atmospheric opening in the vacuum preparation chamber 6 are formed independently.

[0118] FIG8 is a schematic diagram of a modified example of the piping structure 9D of the piping structure 9C in the third embodiment of the present invention.

[0118] As shown in Figure 8, in the piping structure 9D, the first vacuum exhaust path 9a and the second vacuum exhaust path 9b meet along the way and are connected to a vacuum pump 9c. In addition, the first gas supply path 9e and the second gas supply path 9f meet along the way and are connected to a gas supply unit 9d.

[0119] That is, in the piping structure 9D, similar to the substrate processing apparatus 1A of the first embodiment, a vacuum pump 9c and a gas supply unit 9d can be used to exhaust the vacuum of the valve body housing chamber 10 and open it to the atmosphere, as well as to exhaust the vacuum of the vacuum preparation chamber 6 and open it to the atmosphere.

[0120] The piping structure 9D is also configured such that the first vacuum exhaust path 9a and the first air supply path 9e are set up independently without meeting along the way. Therefore, the situation where the microparticles retained in the first vacuum exhaust path 9a return to the valve body housing chamber 10 when the atmosphere is open can be prevented, and the number of microparticles flowing from the valve body housing chamber 10 into the vacuum preparation chamber 6 can be reduced more reliably.

[0121] Furthermore, the piping structure 9D is configured such that the first vacuum exhaust path 9a and the second vacuum exhaust path 9b are independently arranged without converging along the way. Therefore, similar to the substrate processing apparatus 1B in the second embodiment, the piping structure 9D can also start vacuum exhaust of the vacuum preparation chamber 6 through the second vacuum exhaust path 9b after vacuum exhaust of the valve body receiving chamber 10 is started through the first vacuum exhaust path 9a.

[0122] That is, in the substrate processing apparatus 3C using the piping structure 9D, even when using a vacuum pump 9c and a gas supply unit 9d, the first vacuum exhaust path 9a and the first gas supply path 9e are set up independently of each other without meeting in the middle.

[0123] Furthermore, in the substrate processing apparatus 3C using the piping structure 9D, even when using a vacuum pump 9c and a gas supply unit 9d, vacuum exhaust can be started in the vacuum preparation chamber 6 through the second vacuum exhaust path 9b after the vacuum exhaust of the aforementioned valve body receiving chamber 10 is started through the first vacuum exhaust path 9a.

[0124] Furthermore, the present invention is not limited to the aforementioned embodiments and variations, and various changes and implementations can be made without departing from its spirit.

Claims

1. A substrate processing apparatus for performing predetermined processing on a substrate in a processing chamber where the interior is a vacuum, the substrate processing apparatus comprising: a vacuum preparation chamber; a valve body receiving chamber adjacent to the vacuum preparation chamber and housing a first valve body; a first transport path having a first opening communicating with the valve body receiving chamber for the substrate to pass through; a second transport path having a second opening communicating with the valve body receiving chamber and a third opening communicating with the vacuum preparation chamber for the substrate to pass through; a first vacuum exhaust path communicating with the valve body receiving chamber for venting vacuum from the valve body receiving chamber; and a second vacuum exhaust path communicating with the vacuum preparation chamber for venting vacuum from the vacuum preparation chamber; wherein the first opening is opened and closed by the first valve body.

2. The substrate processing apparatus as described in claim 1 further comprises a second valve body housed in the aforementioned valve body housing chamber; the aforementioned second opening is opened and closed by the aforementioned second valve body.

3. The substrate processing apparatus as described in claim 1 or 2, wherein, The aforementioned valve body receiving chamber has a vent that connects to the aforementioned first vacuum exhaust path; the aforementioned vent is located below the aforementioned first opening and the aforementioned second opening.

4. The substrate processing apparatus as described in claim 1 or 2 further includes a vacuum pump for venting the vacuum preparation chamber and the valve body receiving chamber; the first vacuum venting path and the second vacuum venting path converge on their respective paths and are connected to the vacuum pump.

5. The substrate processing apparatus as described in claim 1 or 2 further comprises: a first gas supply path for supplying gas flow to open the aforementioned valve body receiving chamber to the atmosphere; and a gas supply unit connected to the aforementioned first gas supply path and supplying the aforementioned gas; the aforementioned first gas supply path converges with the aforementioned first vacuum exhaust path at a confluence point located on the route from the aforementioned gas supply unit to the aforementioned valve body receiving chamber; the aforementioned gas system sequentially passes through the area of ​​the confluence point and a portion of the aforementioned first vacuum exhaust path to reach the aforementioned valve body receiving chamber.

6. The substrate processing apparatus as described in claim 5 further comprises: a vacuum pump connected to the aforementioned first vacuum exhaust path; and a dust collection unit for capturing microparticles passing through the aforementioned first vacuum exhaust path; the aforementioned dust collection unit is disposed in the aforementioned confluence portion of the aforementioned first vacuum exhaust path along the route to the aforementioned vacuum pump.

7. The substrate processing apparatus as described in claim 1 or 2 further comprises: a first gas supply path for supplying gas flow to open the aforementioned valve body housing chamber to the atmosphere; the aforementioned first vacuum exhaust path and the aforementioned first gas supply path are provided independently of each other.

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