Light emitting display device

Abstract

This disclosure provides a light-emitting display device, comprising: a substrate including a first region and a second region; a first light-shielding pixel defining film disposed on the first region, the first light-shielding pixel defining film exposing a first blue light-emitting portion, a first green light-emitting portion and a first red light-emitting portion and having a first height; a second light-shielding pixel defining film disposed on the second region, including an area exposing a second blue light-emitting portion, a second green light-emitting portion, a second red light-emitting portion and a light-transmitting portion, and having a second height less than the first height; and light-emitting elements located on the first blue light-emitting portion, the first green light-emitting portion, the first red light-emitting portion, the second blue light-emitting portion, the second green light-emitting portion and the second red light-emitting portion.

Description

Technical Field

[0001] This disclosure relates to a display device, and more specifically, to a light-emitting display device comprising transistors for improving brightness and reliability. Prior Technology

[0002] Display devices used to display images in televisions, monitors, mobile phones, tablets, and laptops are used in various modes and configurations.

[0003] A display device includes a plurality of pixels forming an image and a plurality of transistors controlling the operation of each pixel.

[0004] A display device includes a plurality of pixels and is equipped with a plurality of driving and switching elements to drive and control the pixels. The driving and switching elements may include a plurality of transistors, which are widely used not only in pixels but also in integrated circuits.

[0005] Recently, various research and development efforts have been undertaken to improve the performance and reliability of transistors. Summary of the Invention

[0006] Therefore, this disclosure relates to a light-emitting display device that substantially eliminates one or more problems arising from the limitations and drawbacks of the prior art.

[0007] One object of this disclosure is to provide a light-emitting display device that displays improved brightness in a region where light-emitting and light-transmitting portions are mixed based on structural changes.

[0008] Another objective of this disclosure is to provide a light-emitting display device that can not only block upper light but also internal scattered light, such a light-emitting display device being based on a light-shielding pixel defining film arranged around the light-emitting portion in a transistor containing a high-mobility oxide semiconductor active layer.

[0009] Another objective of this disclosure is to provide a light-emitting display device that can prevent the influence of light from light-emitting elements in a structure containing a high-mobility oxide semiconductor active layer, and in particular, can prevent the influence difference of the active layer caused by the wavelength difference of light through the height difference of the light-shielding pixel limiting film.

[0010] Another object of this disclosure is to provide a light-emitting display device that can prevent light generated from adjacent light-emitting elements from being transmitted to the light-transmitting portion based on a light-shielding pixel defining film arranged around the light-emitting portion.

[0011] Another objective of this disclosure is to provide a light-emitting display device that can prevent rapid changes in brightness by means of a gradual change in the thickness of a light-shielding pixel defining film at the boundary between the light-emitting portion and the light-transmitting portion.

[0012] Another objective of this disclosure is to provide a light-emitting display device that can improve optical reliability, form active patterns with different structures in the same process, reduce the amount of materials used in manufacturing the display device, such as gases and etchants, and reduce the generation of greenhouse gases during the manufacturing process, thereby achieving process optimization.

[0013] Other advantages, objectives, and features of this disclosure will be set forth in part below, and in part will become apparent to those skilled in the art through the following review, or may be learned from practice of this disclosure. The objectives and other advantages of this disclosure may be realized and achieved through the written description and the structures particularly pointed out in the claims and figures of this disclosure.

[0014] A light-emitting display device according to an embodiment of the present disclosure includes: a substrate comprising a first region and a second region; a first light-shielding pixel defining film disposed on the first region, the first light-shielding pixel defining film exposing a first blue light-emitting portion, a first green light-emitting portion and a first red light-emitting portion and having a first height; a second masking pixel defining film disposed on the second region, comprising a region exposing a second blue light-emitting portion, a second green light-emitting portion, a second red light-emitting portion and a light-transmitting portion, and having a region comprising a second height less than the first height; and light-emitting elements located on the first blue light-emitting portion, the first green light-emitting portion, the first red light-emitting portion, the second blue light-emitting portion, the second green light-emitting portion and the second red light-emitting portion.

[0015] It should be understood that the foregoing general description of this disclosure and the following detailed description of the disclosure are exemplary and interpretive, and are intended to provide further interpretation of the claimed disclosure. Simple Explanation of the Diagram

[0016] The drawings, which are incorporated into this application to provide a further understanding of the disclosed content and constitute a part of this application, illustrate the disclosed embodiments and, together with the description, serve to explain the disclosed principles. Wherein:

[0017] Figure 1 is a plan view illustrating a light-emitting display device according to an embodiment of the present disclosure;

[0018] Figure 2 is a circuit diagram illustrating a sub-pixel according to an embodiment of the present disclosure;

[0019] Figure 3 is an enlarged schematic diagram of region A in Figure 1 according to an embodiment of the present disclosure;

[0020] Figure 4 is a cross-sectional schematic diagram of a portion of the first region of Figure 3 and the second region of Figure 3 along line I-I' according to the first embodiment of this disclosure;

[0021] Figure 5 is a schematic cross-sectional view showing the transistor of a sub-pixel according to the first embodiment of this disclosure;

[0022] Figure 6 is a cross-sectional schematic diagram of a light-emitting display device according to a second embodiment of the present disclosure; and

[0023] Figure 7 is a cross-sectional schematic diagram of a light-emitting display device according to a third embodiment of the present disclosure. Implementation

[0024] The preferred embodiments of this disclosure will now be described with reference to the accompanying drawings. In the following description of this disclosure, detailed descriptions of relevant conventional steps, elements, functions, techniques, and configurations may be omitted if they would obscure the key points of the inventive concept. Furthermore, the names of the elements used in the following explanation may be chosen solely for ease of writing and may therefore differ from the names used in actual products.

[0025] The shapes, dimensions, scales, angles, numbers, etc., disclosed in the drawings for illustrative purposes are given by way of example only. This disclosure is not limited to what is shown in the drawings. Terms such as "comprising," "having," and "constituting" as used herein are generally intended to allow for the addition of other components, unless these terms are used in conjunction with the term "only." The terminology used herein is for describing particular aspects and not for limiting the disclosure. As used herein, the terms "a" and "an" are used to describe an element in the singular form and are intended to include multiple elements. Elements described in the singular form are intended to include multiple elements, and vice versa, unless otherwise expressly stated.

[0026] When interpreting a component or value, even if no explicit description of the component or value is provided, the component or value should be interpreted as including a range of error or tolerance.

[0027] In describing the various exemplary embodiments of this disclosure, when using terms such as "above," "over," "below," and "adjacent" to describe the positional relationship between two elements, unless "just," "directly," or "closely" is used, at least one intermediate element may exist between the two elements. It can be understood that when an element or layer is referred to as "connected" or "coupled" to another element or layer, it can be directly connected or coupled to the other element or layer, or one or more intermediate elements or layers may exist.

[0028] In describing the various exemplary embodiments disclosed herein, when terms such as "after," "following," "next," and "before" are used to describe the temporal relationship between two events, other events may occur between them unless more restrictive terms such as "just," "immediately," or "directly" are used.

[0029] In describing the various exemplary embodiments of this disclosure, terms such as "first" and "second" may be used to describe various components. These terms are intended to distinguish identical or similar components from one another, and are not intended to limit the components. Therefore, unless otherwise stated, throughout the specification, a "first" component may be the same as a "second" component within the technical principles of this disclosure.

[0030] The features of the various embodiments disclosed herein may be partially or wholly coupled or combined with each other, and may interoperate and be technically driven by each other in various ways, as will be fully understood by those skilled in the art to which this disclosure pertains. The embodiments disclosed herein may be performed independently of each other or in combination with each other.

[0031] Figure 1 is a plan view illustrating a light-emitting display device according to an embodiment of the present disclosure. Figure 2 is a circuit diagram illustrating a sub-pixel according to an embodiment of the present disclosure.

[0032] Referring to Figures 1 and 2, the light-emitting display device 1000 according to an embodiment of this disclosure may include a display panel DP and a housing (not shown) accommodating the side portion and the lower portion of the display panel DP. The non-display area NA of the display panel DP may be covered by the housing or a separate light-shielding film. A printed circuit film and / or a battery may be included between the lower portion of the display panel DP and the housing.

[0033] The display panel DP may include a substrate 110 and a driver connected to the substrate 110. The substrate 110 includes a display area AA and a non-display area NA surrounding the display area AA. The driver may be integrated into the substrate 110 along with the configuration in the pixel array of the display area AA, or it may be connected to the substrate 110 via a chip-on-glass (COG) method, or it may be connected to a printed circuit board via a chip-on-film (COF) package through a film or connector on the substrate 110. Alternatively, the driver may include configurations integrated into the substrate 110 and external configurations via COG or COF.

[0034] The display area AA is the area for displaying images. Multiple subpixels SP are set within the display area AA of the display panel DP. Multiple subpixels SP can be used to display images. The area outside the display area AA in the display panel DP can be the non-display area NA.

[0035] The non-display area NA can be located in the edge area of ​​the display area AA surrounding the displayed image. A driver for driving at least one of a plurality of sub-pixels SP can be located in the non-display area NA. The driver may include a gate-in-panel (GIP). The GIP can be connected to a plurality of gate lines GL of the display area AA and can sequentially provide gate voltage signals to the plurality of gate lines GL.

[0036] Various additional components can be further configured in the non-display area NA to drive multiple sub-pixels SP in the display area AA.

[0037] Among these pixels, at least one sub-pixel SP includes a first transistor T1, a second transistor T2, a storage capacitor Cst, a compensation circuit CC, and a light-emitting element ED, as shown in Figure 2.

[0038] For example, the first transistor T1 can be a switching transistor, and the second transistor T2 can be a driving transistor.

[0039] The first electrode (e.g., drain electrode) of the first transistor T1 is electrically connected to the data line DL, and the second electrode (e.g., source electrode) is electrically connected to the first node N1. The gate electrode of the first transistor T1 is electrically connected to the gate line GL. In response to the scan signal provided through the gate line GL, the first transistor T1 transmits the data signal provided through the data line DL to the first node N1.

[0040] The storage capacitor Cst is electrically connected to the first node N1 and is charged by the voltage applied to the first node N1.

[0041] The first electrode (e.g., drain electrode) of the second transistor T2 receives a high-potential driving voltage EVDD, and the second electrode (e.g., source electrode) is electrically connected to the first electrode (e.g., anode) of the light-emitting element ED. The second electrode (e.g., cathode) of the light-emitting element ED is connected to a low-potential driving voltage EVSS, such as ground. The second transistor T2 can control the amount of driving current flowing through the light-emitting element ED based on the voltage difference between the gate electrode and the source electrode.

[0042] The semiconductor layer of the first transistor T1 and / or the second transistor T2 may contain silicon such as amorphous silicon (a-Si), polycrystalline silicon (poly-Si) or low-temperature polycrystalline silicon (poly-Si), or may contain oxide semiconductor materials.

[0043] The transistor and display device of the present disclosure embodiment include an oxide semiconductor layer in at least one transistor formed on a substrate 110. Therefore, forming multiple transistors at a relatively low temperature compared to other materials is beneficial for maintaining amorphous properties and having high mobility.

[0044] Simultaneously, the light-emitting element (ED) outputs light corresponding to the driving current. The ED can output any one of red, green, blue, or white light.

[0045] An ED (Emitting Light Emitting Device) may include an anode, an intermediate layer disposed on the anode, and a cathode providing a common voltage. The intermediate layer includes at least one emitting layer. When an electric field is formed between the anode and the cathode, the intermediate layer can be configured to emit light of the same color, such as white light, to each pixel, or it can be configured to emit light of a different color, such as red, green, or blue light, to each sub-pixel SP. In addition to the emitting layer, the intermediate layer may also include various types of common layers and functional layers to efficiently provide holes and electrons to the emitting layer.

[0046] The light-emitting element (ED) can be a front-facing light-emitting diode or a rear-facing light-emitting diode.

[0047] A compensation circuit CC can be further provided in the sub-pixel SP to compensate for the threshold voltage of the second transistor T2. The compensation circuit CC may contain one or more transistors. The compensation circuit CC may contain at least one transistor and a capacitor, and may be configured in various ways depending on the compensation method. The sub-pixel SP containing the compensation circuit CC may contain circuits with various structures and different numbers of transistors and / or capacitors, such as 3T1C, 4T2C, 5T2C, 6T1C, 6T2C, 7T1C, and 7T2C.

[0048] Among the multiple transistors arranged within a sub-pixel, the switching transistors may require high-speed driving to achieve high-speed switching operations. The driving transistors can provide a large current to the light-emitting element and require high current output to achieve high brightness performance.

[0049] The non-display area (NA) may contain a gate inlet (GIP). For example, the GIP responds to a gate control signal input from a timing controller by outputting a gate signal to the gate line. The GIP may contain a plurality of transistors, and these transistors may be formed in the same process as the transistors of the sub-pixel (SP).

[0050] Figure 3 is an enlarged schematic diagram of region A in Figure 1 according to an embodiment of the present disclosure. Figure 4 is a cross-sectional schematic diagram of a portion of the second region and the first region of Figure 3 along line I-I' according to a first embodiment of the present disclosure. Figure 5 is a cross-sectional schematic diagram showing a sub-pixel transistor according to a first embodiment of the present disclosure.

[0051] A camera or sensor may be disposed on the underside of the substrate 110, as shown in area A of FIG1. ​​The camera or sensor may overlap with the substrate 110 and may be disposed on the underside of the substrate 110. As shown in FIG1, area A is included in the display area AA.

[0052] Referring to Figure 3, region A includes a first region BA and a second region SA. Subpixels SP1, SP2 and SP3 are regularly arranged in the first region BA with a first setting density. A camera or sensor is arranged in the second region SA, and a light-transmitting portion TA is further provided to receive light from the camera or sensor or to transmit light from above to the camera or sensor. Therefore, subpixels SP1, SP2 and SP3 are arranged with a second setting density that is lower than the first setting density.

[0053] Area A is located within display area AA. A second area SA, which is equipped with a camera or sensor, may be partially located within display area AA and may include at least one second area. Furthermore, a first area BA may surround at least one second area SA.

[0054] More specifically, the first region BA contains a plurality of first pixels P1 as units, each first pixel P1 contains sub-pixels SP1, SP2 and SP3 that emit light of different colors, and the plurality of first pixels P1 are uniformly arranged without spacing between each other.

[0055] The second region SA contains a plurality of second pixels P2 as units. Each pixel P2 contains sub-pixels SP1, SP2 and SP3 that emit light of different colors. A portion of the second region SA contains densely arranged second pixels P2, while the rest of the second region SA is left empty, thus serving as the light-transmitting portion TA.

[0056] Each of the first pixel P1 in the first region BA and the second pixel P2 in the second region SA may contain a transistor and a light-emitting element ED in each sub-pixel SP1, SP2 and SP3 as described with reference to FIG2.

[0057] The second pixel P2 is provided with a light-transmitting portion TA located in the second region SA and has a second resolution that is lower than the first resolution of the first pixel P1.

[0058] Here, since the second region SA has a second pixel P2 with a lower resolution than the first pixel P1 of the first region BA, and no transistor is disposed in the area occupied by the light-transmitting portion TA in the second region SA, the transistor density in each region is lower than that in the first region BA. Therefore, in order to have the same light-emitting characteristics as the first region BA, the transistors in the second region SA have relatively higher sensitivity than the transistors in the first region BA. For example, the mobility of the transistors in the second region SA is higher than that of the transistors in the first region BA. Furthermore, to have a difference in mobility, for example, the semiconductor layer materials of the transistors in the first region BA and the second region SA can be different, or the structures of the two transistors can be different.

[0059] Furthermore, the plurality of transistors configured in each of the first region BA and the second region SA require different mobility characteristics, different sensing sensitivities, or the ability to display grayscale. For example, a switching transistor may have a higher mobility than a driving transistor used for grayscale representation because this requires a higher response speed.

[0060] As shown in FIG3, the light-emitting display device according to the present disclosure embodiment includes a substrate 100 having a first region BA and a second region SA, a plurality of first light-emitting portions EM1 disposed in the first region BA, second light-emitting portions EM2 and light-transmitting portions TA disposed in the second region SA and spaced apart from each other, and a pixel limiting film BNK1 surrounding the first light-emitting portions EM1 and a pixel limiting film BNK2 surrounding the second light-emitting portions EM2. The pixel limiting film BNK1 may include a first light-shielding pixel limiting film 240A and a light-transmitting pixel limiting film 250. The pixel limiting film BNK2 may include a first light-shielding pixel limiting film 240A and a light-transmitting pixel limiting film 250.

[0061] Furthermore, since the light-transmitting portion TA of the second region SA is not equipped with a transistor, light emitted from the upper part of the substrate 110 can pass through to the lower part of the substrate 110, or light emitted from a sensor or camera located at the lower part of the substrate 110 can be transmitted to the upper part of the substrate 110.

[0062] In the assembly of a light-emitting element (ED), components for reflection or light blocking can be omitted from the light-transmitting portion (TA). For example, when the ED includes an anode, an intermediate layer, and a cathode, and the anode or cathode is a reflective electrode, the reflective electrode can be removed from the light-transmitting portion (TA). In some cases, a portion of the intermediate layer can be removed from the light-transmitting portion (TA) to increase its light transmittance.

[0063] Each of the sub-pixels SP1, SP2, and SP3 in the first region BA and the second region SA may include pixel-defining films BNK1 and BNK2, which define a first light-emitting portion EM1 or a second light-emitting portion EM2 through which light emitted from the light-emitting element ED passes. The pixel-defining film BNSP may include a embankment structure and a spacing structure, and may surround the first light-emitting portion EM1 and the second light-emitting portion EM2, thus opening both portions. The pixel-defining film BNSP may have a matrix shape. The pixel-defining film BNSP can be removed from the area corresponding to the light-transmitting portion TA.

[0064] In the assembly on substrate 110, the light-transmitting portion TA may further include a transparent insulating film.

[0065] Meanwhile, as shown in Figure 2, the sub-pixels SP1, SP2, and SP3 of the first region BA and the second region SA may further include a first transistor T1, a second transistor T2, and a capacitor Cst, as well as a switching transistor, a light-emitting transistor, and a sampling transistor driven by a scan signal and a light-emitting control signal (EM signal) applied from an additional gate line. The active layer of the transistors disposed within the sub-pixels of the second region SA, rather than the active layer of the transistors disposed in the first region BA, may include oxide semiconductors, polycrystalline silicon, amorphous silicon, etc. The active layers of the switching transistors, light-emitting control transistors, and sampling transistors with different characteristics may be made of the same or different materials. Furthermore, the switching transistors, EM transistors, and sampling transistors with different characteristics may be configured as needed so that each active layer has the same or different mobility.

[0066] The second region SA includes a light-transmitting portion TA, but the light-transmitting portion TA does not have multiple transistors containing metal for light transmission. Therefore, the transistor P2_T of the second region SA is only disposed in the sub-pixels SP1, SP2, and SP3 of the second pixel P2, which are disposed in a restricted manner. The second region SA operates the light-emitting element only using the transistors disposed in the sub-pixels SP1, SP2, and SP3 of the second pixel P2, and the light emission intensity of the region corresponding to the second region SA, including the light-transmitting portion TA, must be adjusted. In order to prevent the brightness in the second region SA from decreasing and to make the first region BA have the same brightness as the second region SA, the driving current intensity required for the transistors located in the second region SA can be greater than the driving current intensity required for the transistors located in the first region BA.

[0067] For example, when the transistor density in the second region SA is 40% of the transistor density in the first region BA, the current intensity required by the transistors in the second region SA is more than twice that required by the transistors in the first region SA.

[0068] The light-emitting display device according to the disclosed embodiment described below has a structure in which a pixel defining film is configured to surround a light-emitting portion to prevent internal light generated from the light-emitting portion from affecting the underlying transistor, and a structure in which a second region SA containing a sensor or camera is included to increase luminous efficiency.

[0069] For example, the following describes a light-emitting display device in which sub-pixel SP1 is a light-emitting element emitting blue light, sub-pixel SP2 is a light-emitting element emitting green light, and sub-pixel SP3 is a light-emitting element emitting red light.

[0070] As shown in Figures 3 and 4, the light-emitting display device 1000A according to the first embodiment of the present disclosure includes a substrate 110, a first light-shielding pixel limiting film 240A, and a second light-emitting pixel limiting film 240B. The substrate 110 includes a first region BA and a second region SA, and the first light-shielding pixel limiting film 240A in the first region BA and the second light-emitting pixel limiting film 240B in the second region SA having different heights.

[0071] In other words, the first light-shielding pixel limiting film 240A disposed in the first region BA exposes the first blue light emitting portion BEM1, the first green light emitting portion GEM1 and the first red light emitting portion REM1, and the first light-shielding pixel limiting film 240A has a first height H1.

[0072] The second light-shielding pixel limiting film 240B disposed in the second region SA exposes the second blue light emitting portion BEM2, the second green light emitting portion GEM2, the second red light emitting portion REM2 and the light-transmitting portion TA. This second light-shielding pixel limiting film 240B includes regions having a second height H2 and / or a third height H3 that are smaller than the first height H1.

[0073] The light-emitting element ED is included on each of the first blue light-emitting portion BEM1, the first green light-emitting portion GEM1, the first red light-emitting portion REM1, the second blue light-emitting portion BEM2, the second green light-emitting portion GEM2, and the second red light-emitting portion REM2, and is emitted by the corresponding sub-pixel.

[0074] The light-emitting element (ED) includes a first electrode 210, an intermediate layer 220, and a second electrode 230. A first light pixel defining film 240A in the first region BA and a second light pixel defining film 240B in the second region SA can be disposed on the first electrode 210 and at least partially overlap with the first electrode 210, respectively. The intermediate layer 220 and the second electrode 230 can be disposed above the first electrode 210 exposed by the first light pixel defining film 240A and the second light pixel defining film 240B. Simultaneously, the intermediate layer 220 and the second electrode 230 can be at least partially disposed above the first light pixel defining film 240A and the second light pixel defining film 240B.

[0075] One of the first electrode 210 and the second electrode 230 may include a reflective electrode, and the other may include a transparent electrode or a reflective-transparent electrode.

[0076] When the first electrode 210 includes a reflective electrode, it can be used to block light projected onto the underlying transistor. For example, the first electrode 210 can have a multilayer structure, such as a layered structure of aluminum (Al) and titanium (Ti) (Ti / Al / Ti), a layered structure of aluminum (Al) and ITO (ITO / Al / ITO), an APC (Ag / Pd / ITO) alloy, a layered structure of APC alloy and ITO (ITO / APC / ITO), or a layered structure of silver (Ag) and molybdenum / titanium alloy (Ag / MoTI), or it can include a single-layer structure containing one of the following materials: gold (Au), magnesium (Mg), calcium (Ca), or barium (Ba), or an alloy of two or more materials. For example, the first electrode 210 can have a laminated structure of a first transparent electrode, a reflective electrode, and a second transparent electrode. The second transparent electrode, as the uppermost electrode of the first electrode 210, can reduce the barrier to hole injection at the interface with the dielectric intermediate layer EL. Here, the first transparent electrode and the second transparent electrode comprise transparent oxide electrodes, such as ITO and IZO.

[0077] The first electrode 210 can be used as the anode.

[0078] The sub-pixels P1_SP in the first region are closely arranged and have no light-transmitting portion. Therefore, when light is emitted from the first blue light-emitting portion BEM1, the first green light-emitting portion GEM1, and the first red light-emitting portion REM1, the first electrode 210 can prevent the light from propagating downwards at a right angle. However, light reflected diagonally and directed towards adjacent sub-pixels on the side may affect the transistor below. Therefore, a first light-shielding pixel limiting film 240A with a first height H1 is provided around the first blue light-emitting portion BEM1, the first green light-emitting portion GEM1, and the first red light-emitting portion REM1 of the sub-pixel P1_SP in the first region to effectively prevent the generation of light-emitting element ED and to effectively prevent light from being transmitted diagonally to adjacent sub-pixels around the light-emitting portion of each sub-pixel.

[0079] Each sub-pixel's transistor may include an active layer 151, a gate electrode 161 overlapping the active layer 151, and a first source-drain electrode 171 and a second source-drain electrode 172 connected to both sides of the active layer 151. Figure 4 also shows the sub-pixel P1_SP of the first region, the blue sub-pixel P2_SP1 of the second region emitting blue light, and the green sub-pixel P2_SP2 or red sub-pixel P2_SP3 of the second region emitting green or red light. Therefore, only one transistor of each sub-pixel is shown in the figure. Each sub-pixel may contain multiple transistors, and these transistors are used in different applications and can be formed in different layer structures. In addition, Figure 4 shows a driving transistor as an example. Switching transistors and light-emitting transistors may have different structures.

[0080] For example, the active layer 151 may comprise any of oxide semiconductor, crystalline silicon, or amorphous silicon.

[0081] When the active layer 151 is formed of oxide semiconductor, the crystallization process can be omitted, which has the advantages of reducing greenhouse gases and increasing yield.

[0082] When the active layer 151 is formed of an oxide semiconductor, the mobility of the active layer 151 and the transistor can be adjusted by regulating the ratio of the metal or metal component that binds to oxygen.

[0083] The light generated in the intermediate layer 220 of the light-emitting element (ED) is emitted radially. The vertically emitted light is repeatedly reflected between the first electrode 210 and the second electrode 230, and finally output to the second electrode 230, contributing to the luminous efficiency of the ED. Of the radially emitted light generated in the intermediate layer 220, light oriented diagonally (other than vertically) can be transmitted to sub-pixels adjacent to them. The light undergoes reflection and re-reflection through various reflection mechanisms included in the light-emitting display device. When the transmitted light strikes a transistor located below the ED of an adjacent sub-pixel, a photocurrent is generated in the transistor, thereby affecting the transistor's characteristics.

[0084] For example, the active layer can be used as an oxide semiconductor.

[0085] Furthermore, the active layer of a transistor requiring high-speed operation can comprise an oxide semiconductor with high mobility. As mobility increases, the bandgap of the oxide semiconductor narrows. When the oxide semiconductor has a high mobility of approximately 15 cm² / Vs to 50 cm² / Vs, its bandgap is approximately 2.8 eV. An active layer with such a narrow bandgap may exhibit conductivity even under short-wavelength light, which is almost blue. Therefore, when an active layer with such a narrow bandgap is used in a transistor, the threshold voltage will drastically switch to a negative value.

[0086] This is derived from the relationship between the band gap and wavelength in "Formula 1" below.

[0087] "Formula 1"

[0088] λ [nm] = hc / Eg (where λ is the wavelength, h is Planck's constant, c is the speed of light, and Eg is the band gap)

[0089] For example, according to Equation 1, even blue light with a peak emission wavelength of 440 nm can generate photocurrent in an active layer with a band gap of 2.8 eV. This means that when light generated from the light-emitting element (ED) has a shorter blue wavelength and is transmitted to an adjacent sub-pixel on the side, the threshold voltage of the transistor located below it shifts to a negative value, increasing the transistor's turn-off current.

[0090] According to "Formula 1", the band gap is inversely proportional to the wavelength.

[0091] This means that when the wavelength of light illuminating the active layer is longer than that of green light, the effect on the active layer's properties is minimal.

[0092] Meanwhile, in the light-emitting display device according to the present disclosure embodiment, the sub-pixel SP of the first region is close to the first blue light-emitting portion BEM1, the first green light-emitting portion GEM1, and the first red light-emitting portion REM1, and has no light-transmitting portion. In this case, the blue light-emitting portion emits short-wavelength light with an emission peak of, for example, 440 nm, which alters the characteristics of the oxide semiconductor layer with high mobility. When light is emitted from the first blue light-emitting portion BEM1, it can emit light to the sub-pixel in the horizontal, vertical, and diagonal directions, such that the first region BA has a first light-shielding pixel defining film 240A with a first height H1 in all sub-pixels P1_SP, preventing the light emitted by the first blue light-emitting portion BEM1 from being transmitted to adjacent sub-pixels in any of the horizontal, vertical, and diagonal directions.

[0093] The sub-pixel density in the second region SA, which contains the sensor or camera, is lower than that in the first region BA. Therefore, the second blue light-emitting portion BEM2, the second green light-emitting portion GEM2, and the second red light-emitting portion REM2 are adjacent to other light-emitting portions, but some of these light-emitting portions are adjacent to the light-transmitting portion TA. A high current is applied to the second region SA to impart a brightness equivalent to that of the first region BA to the sub-pixels with the low density. Furthermore, in response to high-current, high-brightness driving, the mobility of the active layer used in the transistor of the second region SA can be configured to be relatively higher than that of the active layer used in the transistor of the first region BA.

[0094] Meanwhile, in the second region SA, the second light-shielding pixel defining film 240B may include a first height portion 240BA that exposes the second blue light emitting portion BEM2, a second height portion 240BB that exposes the second green light emitting portion GEM2 and the second red light emitting portion REM2, and a third height portion 240BC. The first height portion 240BA has a first height H1, the second height portion 240BB has a second height H2 that is smaller than the first height H1, and the third height portion 240BC has a third height H3 that is smaller than the second height H2. Because the second light-shielding pixel defining film 240B has the first height portion 240BA, the second height portion 240BB, and the third height portion 240BC, the second light-shielding pixel defining film 240B is different from the first light-shielding pixel defining film 240A provided in the first region BA.

[0095] As mentioned earlier, when the mobility of the active layer formed by the oxide semiconductor is high, the band gap is low. To prevent the characteristics of the underlying transistor from being affected when light from the second blue light-emitting portion BEM2 of the second region SA irradiates adjacent sub-pixels, the periphery of the second blue light-shielding pixel limiting film 240BA of the second region SA is designed to have a high first height H1. Furthermore, a second light-shielding pixel limiting film 240BB is provided for the second green light-emitting portion GEM2 and the second red light-emitting portion REM2, which are not adjacent to the second blue light-emitting portion BEM2. The second light-shielding pixel limiting film 240BB has a relatively low second height H2. This is because even if green or red light is generated, the impact on the changes in the transistor characteristics of adjacent sub-pixels is minimal.

[0096] In addition to the second blue light-emitting area BEM2, the green light-emitting area GEM2, and the red light-emitting area REM2, the second area SA is also equipped with a light-transmitting portion TA, and a second light-shielding pixel limiting film 240BC with a height of a third height H3 that is smaller than the second height H2 is provided in the adjacent area of ​​the light-transmitting portion TA, so as to increase the aperture ratio of the light-transmitting portion TA and increase the photosensitivity of the sensor or camera.

[0097] Meanwhile, the first light-shielding pixel defining film 240A and the second light-shielding pixel defining film 240B may contain an opaque material of at least one of a colored pigment, organic black, or carbon to prevent optical interference between adjacent sub-pixels SP. In some cases, the first light-shielding pixel defining film 240A and the second light-shielding pixel defining film 240B may contain a black pigment of polyacrylic acid, polyimide, or polyamide.

[0098] Simultaneously, the first light-shielding pixel defining film 240A and the second light-shielding pixel defining film 240B surrounding the first blue light emitting portion BEM1, the first green light emitting portion GEM1, the first red light emitting portion REM1, the second blue light emitting portion BEM2, the second green light emitting portion GEM2, and the second red light emitting portion REM2 can be partially removed at the connection between the light-emitting element ED and the transistor T2. For example, the light-emitting element ED and the transistor T2 can be directly connected between the first source / drain electrode 171 and the first electrode 210 of the light-emitting element ED, or they can be connected between the first source / drain electrode 171 and the first electrode 210 by further providing a connecting electrode 181, as shown in the figure. In any case, since the light transmitted to the side is blocked in the area where the first source-drain electrode 171 and the connecting electrode 181 are provided, the light-shielding pixel defining film can be omitted in this area.

[0099] A light-transmitting pixel defining film 250 may be further disposed on the first light-shielding pixel defining film 240A and the second light-shielding pixel defining film 240B disposed in the first region BA and the second region SA. The light-transmitting pixel defining film 250 can define the light-emitting portion around each light-emitting portion and protect the first light-shielding pixel defining film 240A and the second light-shielding pixel defining film 240B. The light-transmitting pixel defining film 250 may be provided below the intermediate layer 220 and the second electrode 230.

[0100] The light-transmitting pixel-defining film 250 may contain inorganic or organic materials. The light-transmitting pixel-defining film 250 may contain, for example, polyacrylic acid, polyimide, polyamide, silicon oxide, silicon nitride, or the like.

[0101] In a light-emitting display device according to an embodiment of the present disclosure, compared with the first region BA, the surface area of ​​each light-emitting element ED can be increased to improve the luminous efficiency of the second region SA. To this end, the light-emitting element ED of the second region SA can have a groove 131R on the upper surface of the second planarization film 131 to increase the surface area of ​​the first electrode 210A containing the reflective electrode of the light-emitting element ED, and improve the reflection efficiency and luminous efficiency.

[0102] Since the second region SA must be able to display colors in the second region SA through subpixels with lower resolution and lower density than the first region BA, the second blue light emitting portion BEM2, the second green light emitting portion GEM2, and the second red light emitting portion GEM2 all have grooves 131R. The light-emitting element ED of the second region SA can be disposed in the groove 131R. The surface area of ​​the first electrode 210A, which is placed on the groove 131R and exposed from the second light-shielding fixed pixel film 240B in the second region SA, is wider than the first electrode 210 exposed by the first electrode 210A in the first region BA.

[0103] In a light-emitting display device according to one embodiment of the present disclosure, the groove 131R may not overlap with the second light-shielding pixel defining film 240B. Therefore, the effects of improved reflection efficiency and improved luminous efficiency obtained through the groove 131R structure are not limited by the second light-shielding pixel defining film 240B.

[0104] In a light-emitting display device according to an embodiment of the present disclosure, a groove 131R may be provided in each of the light-emitting portions (second blue light-emitting portion BEM2, second green light-emitting portion GEM2, and second red light-emitting portion REM2) of the second region SA, so that the surface area of ​​the second blue light-emitting portion BEM2 may be larger than the surface area of ​​the first blue light-emitting portion BEM1, the surface area of ​​the second green light-emitting portion GEM2 may be larger than the surface area of ​​the first green light-emitting portion GEM1, and the surface area of ​​the second red light-emitting portion REM2 may be larger than the surface area of ​​the first red light-emitting portion REM1.

[0105] The intermediate layer 220 of the light-emitting element (ED) may include a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. The intermediate layer 220 may be formed by a plurality of stacks including hole transport layers, light-emitting layers, and electron transport layers, and a stacked structure including charge generation layers may be formed between the stacks. The charge generation layers may include, for example, n-type charge generation layers and p-type charge generation layers.

[0106] For each sub-pixel, the light-emitting layer contained in the intermediate layer 220 can be different. For example, the first blue light-emitting portion BEM1 in the first region and the second blue light-emitting portion BEM2 in the second region can each contain at least a blue light-emitting layer; the first green light-emitting portion GEM1 in the first region and the second green light-emitting portion GEM2 in the second region can each contain at least a green light-emitting layer; and the first red light-emitting portion REM1 in the first region and the second red light-emitting portion REM2 in the second region can each contain at least a red light-emitting layer. A red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer can be provided for each sub-pixel SP on each first electrode 210.

[0107] In addition to the light-emitting layer, the intermediate layer 220 may include a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. These layers and transport layers may be continuously disposed in each of the sub-pixels P1_SP, P1, SP2, or SP3 in the first region and each of the sub-pixels P2_SP1, P2_SP2, or P2_SP3 in the second region, and may also be continuously disposed in the light-transmitting portion TA, but this disclosure is not necessarily limited to this.

[0108] For example, at least two or more of the red, green, and blue emissive layers can be stacked and disposed in each sub-pixel SP, and white can be displayed through the light-emitting element ED. In this case, the emissive layer of each sub-pixel may also include a color filter located above the light-emitting element ED to represent the corresponding color.

[0109] As previously described, the intermediate layer 220 can be configured as a stacked structure of two or more stacked stacks. In this case, each light-emitting element ED can include a charge-generating layer disposed between the stacks. The charge-generating layer can be a common layer disposed above the entire surface of the display area AA. When light-emitting layers of different colors are disposed in each light-emitting part, the same light-emitting layer can be disposed in a multi-layer stacked structure including the charge-generating layer between the light-emitting parts.

[0110] The second electrode 230 can be formed using a thin transparent electrode such as ITO or IZO, or a reflective transparent electrode such as silver, silver alloy, magnesium, magnesium alloy, ytterbium (Yb), or ytterbium alloy. In another embodiment, to increase the light transmittance in the light-transmitting portion TA, the second electrode 230 can be partially removed from the light-transmitting portion TA, or a second electrode 230 with a small thickness can be formed. The second electrode 230 can be a shared layer, which is disposed together with the sub-pixel SP and subjected to the same voltage. For this purpose, the second electrode 230 can be configured to extend from the display area AA to a portion of the non-display area NA.

[0111] The second electrode 230 can be a light-transmitting electrode. The second electrode 230 can comprise a transparent conductive metal material (TCO) such as ITO or IZO, or a semi-transparent metal material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). When the second electrode 230 is set as a semi-transparent metal material, the microcavity effect improves the light emission efficiency.

[0112] A capping layer (not shown in the figure) is further formed on the second electrode 230 to protect the second electrode 230 of the light-emitting element ED and increase the upward light emission efficiency.

[0113] An encapsulation layer 300 is disposed on the light-emitting element ED. This encapsulation layer 300 can cover the display area AA and the non-display area NA to prevent oxygen or moisture from penetrating into the light-emitting element ED. If necessary, other layers such as a cover layer can be inserted between the encapsulation layer 300 and the second electrode 230.

[0114] The encapsulation layer 300 may comprise a plurality of layers. The encapsulation layer 300 may have a structure in which inorganic films comprising inorganic insulating materials and organic films comprising organic insulating materials are alternately stacked. For example, the inorganic insulating materials may comprise one or more materials such as silicon oxide, silicon nitride, and / or silicon oxynitride.

[0115] Organic insulating materials may comprise one or more materials selected from the group consisting of polyterephthalate, polynaphthalate, polycarbonate, polyimide, polysulfonate, polyoxymethylene, polyarylate and hexamethyldisiloxane.

[0116] The structure below the light-emitting element (ED) will be described with reference to Figures 4 and 5.

[0117] Figure 5 shows two transistors arranged below the light-emitting element ED. The first transistor T1 can be the switching transistor in Figure 2, and the second transistor T2 can be the driving transistor.

[0118] Figure 4 shows the driving transistors of each sub-pixel in sub-pixel P1_SP of region BA and sub-pixels P2_SP1, P2_SP2, and P2_SP3 of region SA. The structure of the switching transistors of each sub-pixel can be seen in Figure 5.

[0119] The first transistor T1 may include a first light-shielding pattern 141, a first active layer 152 overlapping the first light-shielding pattern 141, a first gate electrode 162 partially overlapping the first active layer 152, and a source-drain electrode 173 connected to one side of the first active layer 152. Another source-drain electrode may be connected to the other side of the first active layer 152.

[0120] The second transistor T2 may include a second light-shielding pattern 145, a second active layer 151 overlapping the second light-shielding pattern 145, a second gate electrode 161 partially overlapping the second active layer 151, and source-drain electrodes 171 and 172 connecting the two sides of the second active layer 151.

[0121] The first light-shielding pattern 141 and the second light-shielding pattern 145 prevent the first active layer 152 of the first transistor T1 and the second active layer 151 of the second transistor T2 from being affected by light transmitted from below the substrate 110. The first light-shielding pattern 141 and the second light-shielding pattern 145 may be disposed on different layers.

[0122] The first transistor T1 may include a gate connection electrode 174 that is connected to a first gate electrode 162 and a first light-shielding pattern 141 on the same layer as the source-drain electrode 173. The gate connection electrode 174 may be branched in the vertical direction and connected through a fifth contact hole CT5 and a sixth contact hole CT6 present in the insulating film. In this configuration, the first light-shielding pattern 141 functions as a bottom gate electrode, and the first gate electrode 162 functions as a top gate electrode, thus enabling brightness driving of the first transistor T1.

[0123] One of the source-drain electrodes 172 of the second transistor T2 can be connected to the second active layer 151 and the second light-shielding pattern 145. One of the source-drain electrodes 172 of the second transistor T2 can branch in the vertical direction and connect through the second contact hole CT2 and the third contact hole CT3 present in the insulating film. The other electrode 171 of the source-drain electrode 171 of the second transistor T2 can be connected to the other side of the second active layer 151.

[0124] The first active layer 151 of the first transistor T1 and the second active layer 152 of the second transistor T2 can be located on the same layer. When the first active layer 151 and the second active layer 152 are located on the same layer, the active layers of their respective transistors can be formed in the same process, thereby reducing the number of photomasks. The first active layer 151 and the second active layer 152 can contain at least one of oxide semiconductor, crystalline silicon, or amorphous silicon.

[0125] When the first active layer 151 and the second active layer 152 are formed from oxide semiconductors, the crystallization process is omitted, thereby reducing greenhouse gases.

[0126] The first transistor T1 and the second transistor T2 can be connected to one side of the light-shielding pattern and the active layer, respectively, thereby stabilizing the potential of the light-shielding pattern. The first transistor T1 can be a switching transistor, and the second transistor T2 can be a driving transistor.

[0127] The first transistor T1 and the second transistor T2 can be disposed in the same sub-pixel. The distances between the light-shielding patterns of the first transistor T1 and the active layer of the second transistor T2 are different. When the distance between the light-shielding pattern and the active layer decreases, the S-factor increases, which is beneficial for expressing gradations including low gradations. Since the second region has a lower sub-pixel density than the first region due to the presence of the light-transmitting portion, the first transistor T1, which corresponds to a relatively high current drive, can be used as the driving transistor for the second region, and the second transistor T2 can be used as the driving transistor for the first region, thereby achieving normal gradation performance. The first active layer and the second active layer provided in the first transistor T1 and the second transistor T2 can contain different oxide semiconductors to reduce mobility differences.

[0128] The first pixel P1 of the first region BA and the second pixel P2 of the second region SA each contain a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3. Each sub-pixel contains a switching transistor and a driving transistor. Furthermore, for compensation purposes, this sub-pixel may further contain a light-emitting control transistor operated by a light-emitting control signal, multiple switching transistors, or similar transistors.

[0129] Compared to the first to third sub-pixels (P1_SP) contained in the first region BA, the first to third sub-pixels (P2_SP1, P2_SP2, P2_SP3) in the second region SA require high brightness and high current driving, so the configuration of the switching transistors and driving transistors in the first region BA and the second region SA may be different.

[0130] The substrate 110 may be formed of a flexible plastic material and may have flexible properties. As another example, the substrate 110 may comprise a thin glass material that is flexible.

[0131] For example, substrate 110 may comprise a first organic film and a second organic film that overlap each other, wherein an inorganic interlayer insulating film is present. The first organic film and the second organic film may comprise the same or different organic films, such as polyethylene terephthalate (PET) and polyimide. In some cases, an adhesive film, such as a pressure-sensitive adhesive (PSA) film, may be included between the first organic film and the second organic film.

[0132] The substrate 110 is used to support and protect the components of the display device 1000 placed thereon.

[0133] A plurality of insulating films (insulating film 200: first buffer layer 121, second buffer layer 122, first insulating film 123, second insulating film 124, third insulating film 125, fourth insulating film 126, fifth insulating film 127, sixth insulating film 128, seventh insulating film 129, first planarization film 130 and second planarization film 131) are stacked in the display area AA and the non-display area (see non-display area NA in FIG1) of the substrate 110, so that the electrodes of the driving transistor T2 constituting the first area and the electrodes of the switching transistor T1 constituting the second area (first light-shielding pattern 141, second light-shielding pattern 145, second gate electrode 161 / first gate electrode 162, source-drain electrode 171 / 172 / 173, source-drain electrode 174) can be insulated from each other.

[0134] The first buffer layer 121 and the second buffer layer 122 are formed of inorganic insulating material and are disposed on the display area AA and the non-display area NA of the substrate 110. The first buffer layer 121 and the second buffer layer 122 are disposed on the substrate 110 to protect the structure disposed on the substrate 110 from the influence of moisture penetrating the substrate 110 and to make the surface of the substrate 110 flat.

[0135] The first buffer layer 121 may be disposed at the edge of the substrate 110 to prevent moisture from penetrating from the edge of the substrate 110. The first buffer layer 121 may include a plurality of inorganic thin films, which, in addition to the transistors disposed on the substrate 110, may also include other types of transistors. Furthermore, the first buffer layer 121 may be used as an interlayer insulating film or a gate insulating film for other transistors.

[0136] For example, the first buffer layer 121 and the second buffer layer 122 may comprise one or more inorganic films, such as silicon oxide film (SiOx), silicon nitride film (SiNx), and silicon nitride oxide film (SiOxNy), or may comprise a multilayer film of the aforementioned plurality of inorganic films stacked together.

[0137] The first light-shielding pattern 141 may be disposed on the second buffer layer 122 formed of a conductive metal material. Specifically, the conductive metal material may include at least one of aluminum-based metals such as aluminum (Al) or aluminum alloys, silver-based metals such as silver (Ag) or silver alloys, copper-based metals such as copper (Cu) or copper alloys, molybdenum-based metals such as molybdenum (Mo) or molybdenum alloys, chromium (Cr), tantalum (Ta), neodymium (Nd), or titanium (Ti).

[0138] A first insulating film 123 and a second insulating film 124 can be sequentially disposed on a second buffer layer 122 on which a first light-shielding pattern 141 is disposed.

[0139] The first buffer layer 121, the second buffer layer 122, the first insulating film 123, and the second insulating film 124 can be one of a buffer layer, a gate insulating layer, or an interlayer insulating film, so that the active layer is formed as one of the buffer layer, gate insulating layer, or interlayer insulating film of the active layer formed by a layer different from the active layer 151 or 152 of the transistor shown.

[0140] In addition, the first insulating film 123 and the second insulating film 124 can serve as buffer layers on which the active layer is disposed.

[0141] The first insulating film 123 and the second insulating film 124 may contain inorganic materials. The inorganic materials may include, for example, silicon oxide (SiOx) films, silicon nitride (SiNx) films, or multiple layers of these films. In some cases, the second buffer layer 113 may be used as a gate insulating film for a transistor containing a polycrystalline silicon semiconductor layer.

[0142] The second light-shielding pattern 145 can be disposed on the second insulating film 124 as a conductive metal material. Specifically, the conductive metal material may include at least one of aluminum-based metals such as aluminum (Al) or aluminum alloys, silver-based metals such as silver (Ag) or silver alloys, copper-based metals such as copper (Cu) or copper alloys, molybdenum-based metals such as molybdenum (Mo) or molybdenum alloys, chromium (Cr), tantalum (Ta), neodymium (Nd), or titanium (Ti).

[0143] For example, the first light-shielding pattern 141 and the second light-shielding pattern 145 can be used as electrodes of a storage capacitor included in the circuitry of a sub-pixel. The first light-shielding pattern 141 and the second light-shielding pattern 145 can be a single layer or can have a stacked structure of multiple different metallic materials.

[0144] A third insulating film 125 and a fourth insulating film 126 may be sequentially disposed on the second insulating film 124 on which the second light-shielding pattern 145 is disposed.

[0145] The third insulating film 125 and the fourth insulating film 126 may contain inorganic materials. For example, the inorganic materials may include a silicon oxide (SiOx) film or a multilayer film in which an inorganic film is laminated.

[0146] The fourth insulating film 126 is disposed below each of the second active layer 151 and the first active layer 152, and can serve as a buffer layer. In addition, the fourth insulating film 126 can be used to flatten the surface of the area formed by the second active layer 151 or the first active layer 152 disposed above.

[0147] The first active layer 152 of the first transistor T1 and the second active layer 151 of the second transistor T2 are disposed on the fourth insulating film 126.

[0148] The first active layer 152 and the second active layer 151 are formed using the same process and may contain an oxide semiconductor material. The oxide semiconductor material may be formed from a combination of at least one metal selected from zinc (Zn), indium (In), gallium (Ga), tin (Sn), and titanium (Ti) and an oxide. In some cases, the mobility in the active layers contained in the sub-pixels P2_SP1, P2_SP2, and P2_S3 of the second region may be increased compared to the sub-pixels of the first region.

[0149] Mobility can be increased by further doping oxide semiconductor materials with highly conductive metals, such as tin (Sn) or iron (Fe), or by changing the composition ratio of the metals that bind with oxygen.

[0150] The light-emitting display device according to the present disclosure includes a first light-shielding pixel limiting film 240A of pixel limiting film BNK1 and a second light-shielding pixel limiting film 240B of pixel limiting film BNK2. The configuration of the pixel limiting films BNK1 and BNK2 defines each light-emitting portion of the light-emitting element ED disposed above the transistors T1 and T2, thereby blocking light transmitted laterally from adjacent sub-pixels, preventing threshold voltage fluctuations of the transistors and improving light sensitivity.

[0151] Furthermore, since the first region BA has a high sub-pixel density and all sub-pixels are laterally adjacent to the blue light-emitting portion, the first light-shielding pixel defining film 240A, configured to surround the first blue light-emitting portion BEM1, the first green light-emitting portion GEM1, and the red light-emitting portion REM1, has a high first height H1. Since the second region SA has a low sub-pixel density and the blue light-emitting portion has a greater influence on the active layer formed by the oxide semiconductor than the green or red light-emitting portion, the second light-shielding pixel defining film 240BA surrounding the second blue light-emitting portion BEM2 is designed with a first height H1. The second green light-emitting portion GEM2 or the second red light-emitting portion REM2, which is not adjacent to the second blue light-emitting portion BEM2, has a second light-shielding pixel defining film 240BB designed with a lower second height H2. Furthermore, in the adjacent region of the light-transmitting portion TA which does not have a transistor, the height of the second light-shielding pixel defining film 240BC is further reduced to a third height H3. The light-transmitting portion TA may not have a light-shielding pixel defining film for light transmission.

[0152] A fifth insulating film 127 is disposed on the fourth insulating film 126 of the first active layer 152 of the second transistor T2 and the second active layer 151 of the first transistor T1, which are equipped with each sub-pixel. The fifth insulating film 127 can be used as a gate insulating film. The fifth insulating film 127 can be formed of silicon oxide film or the like.

[0153] The first gate electrode 162 and the second gate electrode 161 are disposed on the fifth insulating film 127, thereby partially overlapping the first active layer 152 and the second active layer 151, respectively. The first gate electrode 162 and the second gate electrode 161 may contain at least one of aluminum-based metals such as aluminum (Al) or aluminum alloys, copper-based metals such as copper (Cu) or copper alloys, molybdenum-based metals such as molybdenum (Mo) or molybdenum alloys, chromium (Cr), tantalum (Ta), neodymium (Nd), or titanium (Ti). The second gate electrode 161 and the first gate electrode 162 may comprise a single layer or multiple layers.

[0154] The sixth insulating film 128 and the seventh insulating film 129 are disposed on the fifth insulating film 127 to overlap with the first gate electrode 162 and the second gate electrode 161. For example, the sixth insulating film 128 and the seventh insulating film 129 may contain inorganic materials, such as silicon oxide layers or silicon nitride layers. In some cases, at least one of the sixth insulating film 128 and the seventh insulating film 129 may contain multiple layers, wherein inorganic layers are stacked among multiple layers.

[0155] A first contact hole CT1, a second contact hole CT2, and a fourth contact hole CT4 are provided in the fifth insulating film 127, the sixth insulating film 128, and the seventh insulating film 129 to expose both sides of the upper surface of the second active layer 151 and the upper surface of the first active layer 152. Furthermore, a third contact hole CT3 is provided in the third insulating film 125, the fourth insulating film 126, the fifth insulating film 127, the sixth insulating film 128, and the seventh insulating film 129 to expose the upper surface of the second light-shielding pattern 145. The upper surface of the first light-shielding pattern 141 is exposed through the sixth contact hole CT6 in the first insulating film 123, the second insulating film 124, the third insulating film 125, the fourth insulating film 126, the fifth insulating film 127, the sixth insulating film 128, and the seventh insulating film 129, and the fifth contact hole CT5 in the sixth insulating film 128 and the seventh insulating film 129, exposes a portion of the upper surface of the first gate electrode 162.

[0156] Through a conductive metal material, the first contact hole CT1, the second contact hole CT2, and the third contact hole CT3 are filled in the first source-drain 171 and the second source-drain 172. As shown in FIG5, the second source-drain 172 is configured to overlap with the second contact hole CT2 and the third contact hole CT3, and one side of the upper surface of the second active layer 151 of the second transistor T2 can be connected to the upper surface of the second light-shielding pattern 145.

[0157] Conductive metal material is filled into the fourth contact hole CT4, the fifth contact hole CT5, and the sixth contact hole CT6, and then a third source-drain electrode 173, a fourth source-drain electrode (not shown in the figure), and a gate connection electrode 174 are disposed thereon. The third source-drain electrode 173 and the fourth source-drain electrode are respectively connected to both sides of the upper surface of the first active layer 152. The gate connection electrode 174 overlaps with the first gate 162 and the first light-shielding pattern 141, and is connected to the first gate 162 and the first light-shielding pattern 141 through the fifth contact hole CT5 and the sixth contact hole CT6.

[0158] The first light-shielding pattern 141 and the first gate electrode 162 are connected through the gate connection electrode 174, and therefore have the same potential. Thus, the first light-shielding pattern 141 and the first gate electrode 162 can be used as gates above and below the first active layer 152, respectively. Therefore, the first transistor T1 includes dual gates, thus possessing high-speed driving characteristics and dual-switching functionality, making it easy to achieve high-density placement within a limited area.

[0159] The conductive metal material constituting each of the source / drain electrodes 171, 172, 173 and the gate connection electrode 174 may include at least one of aluminum-based metals such as aluminum (Al) or aluminum alloys, copper-based metals such as copper (Cu) or copper alloys, molybdenum-based metals such as molybdenum (Mo) or molybdenum alloys, chromium (Cr), tantalum (Ta), neodymium (Nd) or titanium (Ti).

[0160] A first planarization film 130 may be provided to cover the source / drain electrodes 171, 172, and 173 and the gate connection electrode 174. Furthermore, a seventh contact hole CT7 is formed in the first planarization film 130 to expose the upper part of the first source-drain electrode 171.

[0161] The first planarized film 130 can be formed of an inorganic insulating material or an organic insulating material. For example, the inorganic insulating material can constitute a multilayer film of silicon oxide (SiOx) film, silicon nitride (SiNx) film, or stacked inorganic films. The organic insulating material can include one or more materials selected from acrylic resin, phenolic resin, polyimide resin, unsaturated polyester resin, polyamide resin, benzocyclobutene, polystyrene resin, and polyphenylene sulfide resin.

[0162] A connecting electrode 181 can be provided to fill the contact holes of the first planarization film 130 and can be connected to the first source / drain electrode 171 of the second transistor T2 through a conductive metal material. The conductive metal material may include at least one of aluminum-based metals such as aluminum (Al) or aluminum alloys, copper-based metals such as copper (Cu) or copper alloys, molybdenum-based metals such as molybdenum (Mo) or molybdenum alloys, chromium (Cr), tantalum (Ta), neodymium (Nd), or titanium (Ti).

[0163] The second planarization film 131 is disposed on the first planarization film 130 on which the connecting electrode 181 is disposed, and includes an eighth contact hole CT8 to expose the upper surface of the connecting electrode 181 of the second planarization film 131. In addition, in the sub-pixels P2_SP1, P2_SP2 and P2_SP3 of the second region, the second planarization film 131 is provided with a groove 131R, in which components of the second planarization film 131 are removed from the second planarization film 131 to a predetermined depth.

[0164] The second planarization film 131 may be formed of an organic insulating material to planarize the surface on which the light-emitting element ED is formed. The organic insulating material may comprise at least one material selected from acrylic resin, phenolic resin, polyimide resin, unsaturated polyester resin, polyamide resin, benzocyclobutene, polystyrene resin, and polyphenylene sulfide resin.

[0165] The first electrode 210 of the light-emitting element ED can be connected to the connecting electrode 181 through the eighth contact hole CT8 of the second planarization film 131.

[0166] This disclosure provides a light-emitting display device that exhibits improved brightness based on structural changes in the region where the light-emitting portion and the light-transmitting portion are mixed.

[0167] The light-emitting display device according to the present disclosure embodiment can prevent the upper light and internal scattered light from affecting the lower component based on the light-shielding pixel limiting film disposed around the light-emitting part.

[0168] The light-emitting display device according to the present disclosure includes a pixel defining film. The structure of the pixel defining film includes a high-mobility oxide semiconductor active layer, and the pixel defining film includes a light-shielding pixel defining film with a low height in the area where a sensor or camera is disposed, thereby increasing the light transmittance of the area where the sensor and camera are disposed.

[0169] The light-emitting display device according to the present disclosure reduces the height difference between the light-shielding pixel limiting film around the blue light-emitting portion and the green or red light-emitting portion in the area where the sensor or camera is provided, thereby preventing a significant change in the characteristics of the high-mobility oxide semiconductor when irradiated with relatively short wavelength light.

[0170] The light-emitting display device according to the present disclosure embodiment can prevent light generated from adjacent light-emitting elements from being transmitted to the light-transmitting portion based on a light-shielding pixel limiting film configured to surround the light-emitting portion.

[0171] The light-emitting display device according to the present disclosure embodiment can prevent rapid changes in brightness by gradually varying the thickness of the light-shielding pixel limiting film at the boundary between the light-emitting portion and the light-transmitting portion.

[0172] Because the transistors in the sensor unit have high mobility, the light-emitting display device according to the present disclosure example embodiment is able to respond to the high brightness characteristics required by the sensor unit.

[0173] The light-emitting display device according to the present disclosure embodiment includes grooves in the light-emitting portion of an area where a sensor or camera is disposed, thereby improving reflection efficiency and luminous efficiency. Therefore, the light-emitting display device has sustainability significance, thereby achieving environmental / social / governance (ESG) goals.

[0174] The light-emitting display device according to the embodiments of this disclosure has a light-shielding pixel defining film, thereby preventing changes in the transistors caused by light generated by the light-emitting element and reducing the defect rate of the transistors. Because active patterns with different structures can be manufactured in the same process, the light-emitting display device according to the embodiments of this disclosure can reduce the amount of materials used in the entire manufacturing process, such as gases and etchants used in manufacturing the display device. Therefore, a light-emitting display device that can optimize the process and reduce greenhouse gases generated by this process can be provided. Furthermore, according to the embodiments of this disclosure, this light-emitting display device forms an active layer in each region in the same process, thereby reducing the processes required for other materials, reducing production energy, and reducing greenhouse gases that can be generated through the manufacturing process through process optimization. Therefore, it is possible to achieve environmental / social / governance (ESG) benefits through process optimization.

[0175] Figure 6 is a cross-sectional schematic diagram of a light-emitting display device according to a second embodiment of the present disclosure.

[0176] As shown in FIG6, in the light-emitting display device 1000B according to the second embodiment of the present disclosure, the second light-shielding pixel defining film 240B in the second region SA includes a sensor or a camera. The second light-shielding pixel defining film 240B may have a first height portion 240BA with a height of a first height H1 for the second blue light emitting portion BEM2, and a second height portion 240BB with a height of a second height H2 lower than the first height H1 for the second green light emitting portion GEM2 and the second red light emitting portion REM2. The second light-shielding pixel defining film 240B may also include a thickness variation portion 240V, which gradually decreases from the second height H2 at the boundary portion KHR between the light-transmitting portion TA and the second green light emitting portion GEM2 or the second red light emitting portion REM2.

[0177] In the light-emitting display device according to the second embodiment of the present disclosure, the thickness variation portion 240V of the second light-shielding pixel limiting film 240B can have a lower height, and this lower height has a gradually decreasing distance from the light-transmitting portion TA.

[0178] Therefore, the height of the thickness variation portion 240V of the second light-shielding pixel limiting film 240B gradually changes at the boundary between the light-transmitting portion TA and the adjacent sub-pixel P2_SP2 or P2_SP3 to prevent large changes in brightness between the light-transmitting portion TA and the adjacent sub-pixel P2_SP. The gradually varying height of the thickness variation portion 240V of the second light-shielding pixel limiting film 240B can prevent the boundary between the light-emitting portion (second red light-emitting portion REM2, second red light-emitting portion GEM2, or second blue light-emitting portion BEM2) and the light-transmitting portion TA from being seen in the second area.

[0179] Figure 6 shows the switching transistors on each of the sub-pixels in the first region BA (sub-pixel P1_SP) and the second region SA (sub-pixels P2_SP1, P2_SP2, and P2_SP3).

[0180] Meanwhile, the second embodiment has the same effects as the first embodiment with the same configuration. Descriptions of the same parts are omitted.

[0181] Figure 7 is a cross-sectional schematic diagram of a light-emitting display device according to a third embodiment of the present disclosure.

[0182] As shown in Figure 7, the light-emitting display device according to the third embodiment of this disclosure may include a plurality of inorganic insulating films (first buffer layer 121, second buffer layer 122, first insulating film 123, second insulating film 124, third insulating film 125, fourth insulating film 126, fifth insulating film 127, sixth insulating film 128 and seventh insulating film 129), and a first planarization film 130 and a second planarization film 131 located between the substrate 110 and the light-emitting element ED.

[0183] Furthermore, at least one of the plurality of inorganic insulating films (first buffer layer 121, second buffer layer 122, first insulating film 123, second insulating film 124, third insulating film 125, fourth insulating film 126, fifth insulating film 127, sixth insulating film 128, and seventh insulating film 129) and the first planarization film 130 and the second planarization film 131 surrounding the light-transmitting portion TA may have sidewalls. In the light-transmitting portion TA, at least one of the plurality of inorganic insulating films (first buffer layer 121, second buffer layer 122, first insulating film 123, second insulating film 124, third insulating film 125, fourth insulating film 126, fifth insulating film 127, sixth insulating film 128, and seventh insulating film 129), the first planarization film 130, and the second planarization film 131 may be removed to increase the light transmittance of the light-transmitting portion.

[0184] According to the third embodiment of the present disclosure, the light-emitting display device 1000C includes a substrate 110, which includes a first region BA and a second region SA, as well as a first light-shielding pixel defining film 240A in the first region BA and a second light-shielding pixel defining film 240B in the second region SA having different structures.

[0185] In other words, the first region BA is equipped with a first light-shielding pixel limiting film 240A with a first height of H1, and this first region BA exposes the first blue light portion BEM1, the first green light portion GEM1 and the first red light portion REM1.

[0186] The second light-shielding pixel limiting film 240B disposed in the second zone SA includes a first height portion 240BA that exposes the second blue light emitting portion BEM2, a second height portion 240BB that exposes the second green light emitting portion GEM2 and the second red light emitting portion REM2, and a third height portion 240BC adjacent to the light-transmitting portion TA. The first height portion 240BA has a first height H1, the second height portion 240BB has a second height H2 that is smaller than the first height H1, and the third height portion 240BC has a third height H3 that is smaller than the second height H2.

[0187] In the region surrounding the second blue light-emitting portion BEM2, the second green light-emitting portion GEM2, and the second green light-emitting portion REM2 adjacent to the light-transmitting portion TA, the height of the second light-shielding pixel limiting film 240BC can be further reduced to a third height H3. Furthermore, the transparent pixel limiting film 250 can be removed from the light-transmitting portion TA to increase the light transmittance of the light-transmitting portion TA.

[0188] In the light-emitting display device 1000C according to the third embodiment of this disclosure, a light-shielding pixel limiting film 120BE may be included on the sidewall of at least one of a plurality of inorganic insulating films (first buffer layer 121, second buffer layer 122, first insulating film 123, second insulating film 124, third insulating film 125, fourth insulating film 126, fifth insulating film 127, sixth insulating film 128, and seventh insulating film 129), a first planarization film 130, and a second planarization film 131. In this case, the transversely guided internally scattered light between the light-transmitting portion TA and adjacent sub-pixels P2_SP1 and P2_SP2 is completely blocked around the light-transmitting portion TA, thereby improving the photosensitivity of the light-transmitting portion TA. The light-shielding pixel limiting film 240BE may be connected to the second light-shielding pixel limiting film 240B. The light-shielding pixel limiting film 240BE may be integral with the second light-shielding pixel limiting film 240B.

[0189] Furthermore, the light-emitting display device 1000C according to the third embodiment of this disclosure can completely block the influence of internally scattered light transmitted from the light-transmitting portion TA to the surrounding light-emitting portions (second red light-emitting portion REM2, second green light-emitting portion GEM2 and second green light-emitting portion BEM2), and can effectively block the transmission of internally scattered light to the transistor.

[0190] The thickness of the light-shielding pixel limiting film 240BE disposed on the sidewall of at least one of the plurality of inorganic insulating films (first buffer layer 121, second buffer layer 122, first insulating film 123, second insulating film 124, third insulating film 125, fourth insulating film 126, fifth insulating film 127, sixth insulating film 128 and seventh insulating film 129), first planarization film 130 and second planarization film 131 is equivalent to the third height H3 around the adjacent light-emitting portion (second blue light-emitting portion BEM2, second green light-emitting portion GEM2 and second red light-emitting portion REM2), thereby avoiding the reduction of light transmittance of the light-transmitting portion TA.

[0191] This disclosure provides a light-emitting display device that displays improved brightness in an area where the light-emitting portion and the light-transmitting portion are mixed, based on structural changes.

[0192] The light-emitting display device according to the present disclosure embodiment can prevent the influence of light and internal scattered light on the underlying components based on a light-shielding pixel limiting film configured to surround the light-emitting portion.

[0193] The light-emitting display device according to the present disclosure includes a light-shielding pixel limiting film having an active layer comprising a high-mobility oxide semiconductor in its structure, and includes a light-shielding pixel limiting film having a low height in the area where a sensor or camera is disposed, thereby increasing the light transmittance of the area where the sensor and camera are disposed.

[0194] The light-emitting display device according to the present disclosure reduces the height difference between the light-shielding pixel limiting film surrounding the blue light-emitting portion and the light-shielding pixel limiting film surrounding the green light-emitting portion or the red light-emitting portion in the area where the sensor or camera is located, thereby preventing a significant change in the characteristics of the high-mobility oxide semiconductor when irradiated with relatively short wavelength light.

[0195] The light-emitting display device according to the present disclosure embodiment can prevent light generated from adjacent light-emitting elements from being transmitted to the light-transmitting portion based on a light-shielding pixel limiting film configured to surround the light-emitting portion.

[0196] The light-emitting display device according to the present disclosure embodiment can prevent rapid changes in brightness by gradually varying the thickness of the light-shielding pixel limiting film at the boundary between the light-emitting portion and the light-transmitting portion.

[0197] Because the transistors in the sensor unit have high mobility characteristics, the light-emitting display device according to the embodiments of the present disclosure is able to respond to the high brightness characteristics required by the sensor unit.

[0198] The light-emitting display device according to the present disclosure includes grooves in the light-emitting portion where a sensor or camera area is disposed, thereby improving reflection efficiency and luminous efficiency. Therefore, this light-emitting display device has sustainability significance, thereby achieving ESG objectives.

[0199] The light-emitting display device according to the present disclosure embodiment may include: a substrate, including a first region and a second region; a first light-shielding pixel defining film disposed on the first region, exposing a first blue light-emitting portion, a first green light-emitting portion and a first red light-emitting portion and having a first height; a second light-shielding pixel defining film disposed on the second region, including a region exposing a second blue light-emitting portion, a second green light-emitting portion and a second red light-emitting portion and including a region having a second height less than the first height; and light-emitting elements located on the first blue light-emitting portion, the first green light-emitting portion, the first red light-emitting portion, the second blue light-emitting portion, the second green light-emitting portion and the second red light-emitting portion.

[0200] In a light-emitting display device according to an embodiment of the present disclosure, the second light-shielding pixel defining film may have a second height around the second green light-emitting portion and the second red light-emitting portion.

[0201] In a light-emitting display device according to an embodiment of the present disclosure, the height of the second light-shielding pixel defining film can decrease as the distance from the light-transmitting portion decreases.

[0202] In a light-emitting display device according to an embodiment of the present disclosure, a second light-shielding pixel defining film has a second height around the second green light-emitting portion, the second red light-emitting portion, and the light-transmitting portion.

[0203] In a light-emitting display device according to an embodiment of the present disclosure, a second light-shielding pixel defining film may have a first height around a second blue light-emitting portion, and the second light-shielding pixel defining film may have a second height around a second green light-emitting portion, a second red light-emitting portion and a light-transmitting portion.

[0204] In a light-emitting display device according to an embodiment of the present disclosure, a second light-shielding pixel defining film located in a second region may include a region in which the boundary between the light-transmitting portion and at least one of the second blue light-emitting portion, the second red light-emitting portion, and the second green light-emitting portion has a third height lower than the second height.

[0205] According to one embodiment of the present disclosure, the light-emitting display device may further include a planarization film between the substrate and the light-emitting element. The planarization film has a groove, and the groove may have a predetermined thickness on the upper surface of the second blue light-emitting portion, the second green light-emitting portion, and the second red light-emitting portion.

[0206] In a light-emitting display device according to an embodiment of the present disclosure, the light-emitting element may include: a first electrode, including a reflective electrode; an intermediate layer located on the first electrode; and a second electrode disposed on the intermediate layer. The surface areas of the second blue light-emitting portion, the second green light-emitting portion, and the second red light-emitting portion disposed on the trench may be wider than the surface areas of the first blue light-emitting portion, the first green light-emitting portion, and the first red light-emitting portion on the planarized film.

[0207] In a light-emitting display device according to an embodiment of the present disclosure, the trench does not overlap with the second light-shielding pixel defining film.

[0208] In a light-emitting display device according to one embodiment of the present disclosure, the surface area of ​​the second blue light-emitting portion may be larger than the surface area of ​​the first blue light-emitting portion. The surface area of ​​the second green light-emitting portion may be larger than the surface area of ​​the first green light-emitting portion. The surface area of ​​the second red light-emitting portion may be larger than the surface area of ​​the first red light-emitting portion.

[0209] According to one embodiment of the present disclosure, the light-emitting display device may further include a transparent pixel defining film located on each of a first light-shielding pixel defining film and a second pixel defining film.

[0210] According to one embodiment of the present disclosure, the light-emitting display device may further include a transistor of a light-emitting element connected between a substrate and a planarization film.

[0211] In a light-emitting display device according to an embodiment of the present disclosure, the transistor may include an active layer comprising an oxide semiconductor in each of a first region and a second region.

[0212] In a light-emitting display device according to an embodiment of the present disclosure, the mobility of the active layer located in the second region may be greater than that of the active layer located in the first region.

[0213] According to one embodiment of the present disclosure, the light-emitting display device may further include a light-shielding pattern beneath the active layer.

[0214] In a light-emitting display device according to one embodiment of the present disclosure, the transistor may include a gate electrode that overlaps with a first source-drain electrode and a second source-drain electrode respectively connected to an active layer. Each of the first source-drain electrode and the second source-drain electrode may be connected to a light-shielding pattern.

[0215] In a light-emitting display device according to one embodiment of the present disclosure, the light-emitting display device may include a plurality of inorganic insulating films and a plurality of planarization films between the substrate and the light-emitting element. At least one of the inorganic insulating films or planarization films may have sidewalls surrounding the light-transmitting portion.

[0216] In a light-emitting display device according to an embodiment of the present disclosure, at least one sidewall of the inorganic insulating film and planarization film between the substrate and the light-emitting element may include a light-shielding pixel defining film.

[0217] As described above, the light-emitting display device according to the embodiments of this disclosure has the following effects.

[0218] This disclosure provides a light-emitting display device that exhibits improved brightness in a region where the light-emitting and light-transmitting portions are mixed, based on structural changes.

[0219] The light-emitting display device according to the present disclosure embodiment can prevent the influence of overhead light and internal scattered light on the lower component based on the light-shielding pixel limiting film disposed around the light-emitting portion.

[0220] The light-emitting display device according to the present disclosure includes a high-mobility oxide semiconductor active layer and a light-shielding pixel limiting film with a low height disposed in the area of ​​a sensor or camera, thereby increasing the light transmittance of the area where the sensor and camera are disposed.

[0221] The light-emitting display device according to the present disclosure reduces the height difference between the light-shielding pixel limiting film around the blue light-emitting portion and the green or red light-emitting portion in the area where the sensor or camera is provided, thereby preventing drastic changes in the characteristics of the high-mobility oxide semiconductor when irradiated with shorter wavelength light.

[0222] The light-emitting display device according to the present disclosure embodiment can prevent light generated from adjacent light-emitting elements from being transmitted to the light-transmitting portion based on a light-shielding pixel limiting film disposed around the light-emitting portion.

[0223] The light-emitting display device according to the present disclosure embodiment can prevent rapid changes in brightness by gradually varying the thickness of the light-shielding pixel limiting film at the boundary between the light-emitting portion and the light-transmitting portion.

[0224] Because the transistors in the sensor unit have high mobility, the light-emitting display device according to the embodiments of this disclosure is able to respond to the high brightness characteristics required by the sensor unit.

[0225] The light-emitting display device according to the embodiments of this disclosure includes grooves in the light-emitting portion of an area where a sensor or camera is disposed, thereby improving reflection efficiency and luminous efficiency. Therefore, the light-emitting display device has sustainability significance, thereby achieving ESG (Environmental, Social, and Governance) goals.

[0226] The light-emitting display device according to the embodiments of this disclosure has a light-shielding pixel defining film, thereby preventing changes in the transistors caused by light generated by the light-emitting element and reducing the defect rate of the transistors. Because active patterns with different structures can be manufactured in the same process, the light-emitting display device according to the embodiments of this disclosure can reduce the amount of materials used throughout the manufacturing process, such as the gases and etchants used in manufacturing the display device. Therefore, a light-emitting display device capable of process optimization and reducing greenhouse gases generated by the process can be provided. Furthermore, according to the embodiments of this disclosure, the light-emitting display device forms an active layer for each region in the same process, thereby reducing the process required for additional materials, reducing production energy, and reducing greenhouse gases that may be generated through the manufacturing process through process optimization. Therefore, it is possible to achieve ESG (Environmental, Social, and Governance) effects through process optimization.

[0227] For those skilled in the art, various modifications and alterations can be made to this invention without departing from its principles and scope. Therefore, if such modifications and alterations fall within the scope of the appended patent applications and their equivalents, it is intended that such modifications and alterations be covered in this disclosure.

[0228] 1000, 1000A, 1000B, 1000C: Light-emitting display devices 110:Substrate 121: First Buffer Layer 122: Second Buffer Layer 123: First insulating film 124: Second insulating film 125: Third insulating film 126: Fourth insulating film 127: Fifth insulating film 128: Sixth insulating film 129: Seventh Insulating Film 130: First planarized film 131: Second planarized film 131R: Groove 141: First light-blocking pattern 145: Second shading pattern 151: Second Active Layer 152: First Active Layer 161: Second gate electrode 162: First gate electrode 171, 172, 173: Source-Drain Electrodes 174: Gate connection electrode 181: Connecting Electrodes 200: Insulating film 210, 210A: First electrode 220: Intermediate Layer 230: Second electrode 240A: First Light-Shielding Pixel Limited Film 240B: Second light-shielding pixel limiting film 240BA: First Height Section 240BB: Second Altitude Section 240BC: Third Altitude Section 240BE: Light-blocking pixel-limited film 240V: Thickness variation section 250: Limited-pixel translucent film 300: Encapsulation layer AA: Display area NA: Non-display area BA: Zone 1 REM2: Second red light emitting part BEM2: Second blue light emitting part GEM2: Second green light-emitting part SA: Second District H1: First Height H2: Second Altitude H3: Third Height DP: Display Panel DL: Data Line GL: Gate line BNSP: Pixel-Defining Film BA: Zone 1 SA: Second District TA: Translucent Part P1: First pixel P2: Second pixel P1_T, P2_T: Transistors ED: Light-emitting element CC: Compensation circuit EVDD: High-potential drive voltage N1: First node T1: First transistor T2: Second transistor Cst: Storage capacitor CT1: First contact hole CT2: Second contact hole CT3: Third contact hole CT4: Fourth contact hole CT5: Fifth contact hole CT6: Sixth contact hole CT7: Seventh contact hole CT8: Eighth contact hole SP,SP1,SP2,SP3,P1_SP,P2_SP1,P2_SP2,P2_SP3: Subpixels EM1: First luminescent part BEM1: First blue light emitting part GEM1: First green light-emitting part REM1: First red light emitting part EM2: Second luminescent part BEM2: Second blue light emitting part GEM2: Second green light-emitting part REM2: Second red light emitting part BNK1, BNK2: Pixel-limited film KHR: Boundary section H1: First Height H2: Second Altitude H3: Third Height

Claims

1. A light-emitting display device, comprising: a substrate including a first region and a second region; a sensor or a camera overlapping the second region of the substrate; a first light-shielding pixel defining film disposed in the first region, the first light-shielding pixel defining film exposing a first blue light-emitting portion, a first green light-emitting portion and a first red light-emitting portion, and the first light-shielding pixel defining film having a first height; a second light-shielding pixel defining film disposed in the second region, the second light-shielding pixel defining film including a region exposing a second blue light-emitting portion, a second green light-emitting portion, a second red light-emitting portion and a light-transmitting portion, the light-transmitting portion being used to transmit light to the sensor or the camera, or to transmit light from the sensor or the camera, and the second light-shielding pixel defining film including a region having a second height less than the first height; and a light-emitting element located on the first blue light-emitting portion, the first green light-emitting portion, the first red light-emitting portion, the second blue light-emitting portion, the second green light-emitting portion and the second red light-emitting portion.

2. The light-emitting display device as claimed in claim 1, wherein the second light-shielding pixel defining film has the second height around the second green light-emitting portion and the second red light-emitting portion.

3. The light-emitting display device as claimed in claim 1, wherein the height of one of the second light-shielding pixel defining films decreases as the distance from the light-transmitting portion decreases.

4. The light-emitting display device as claimed in claim 1, wherein the second light-shielding pixel defining film has the second height around the second green light-emitting portion, the second red light-emitting portion and the light-transmitting portion.

5. The light-emitting display device as claimed in claim 1, wherein the second light-shielding pixel limiting film has the first height around the second blue light-emitting portion, and the second light-shielding pixel limiting film has the second height around the second green light-emitting portion, the second red light-emitting portion and the light-transmitting portion.

6. The light-emitting display device as claimed in claim 1, wherein the second light-shielding pixel defining film in the second region includes a region in which the boundary between the light-transmitting portion and at least one of the second blue light-emitting portion, the second red light-emitting portion and the second green light-emitting portion has a third height lower than the second height.

7. The light-emitting display device as claimed in claim 1, further comprising: a planarization film located between the substrate and the light-emitting element, wherein the planarization film has a groove, and the second blue light-emitting portion, the second green light-emitting portion and the second red light-emitting portion have a predetermined thickness from one of the upper surfaces of the groove.

8. The light-emitting display device as claimed in claim 7, wherein the light-emitting element comprises: a first electrode including a reflective electrode; an intermediate layer located on the first electrode; and a second electrode disposed on the intermediate layer, wherein the surface areas of the second blue light-emitting portion, the second green light-emitting portion, and the second red light-emitting portion located on the groove are wider than the surface areas of the first blue light-emitting portion, the first green light-emitting portion, and the first red light-emitting portion on the planarized film.

9. The light-emitting display device as claimed in claim 8, wherein the groove does not overlap with the second light-shielding pixel defining film.

10. The light-emitting display device as claimed in claim 8, wherein the first electrode of the second region is located on the entire area of ​​the groove and a portion of the planarization film surrounding the groove.

11. The light-emitting display device as claimed in claim 1, wherein a surface area of ​​the second blue light-emitting portion is larger than a surface area of ​​the first blue light-emitting portion, a surface area of ​​the second green light-emitting portion is larger than a surface area of ​​the first green light-emitting portion, and a surface area of ​​the second red light-emitting portion is larger than a surface area of ​​the first red light-emitting portion.

12. The light-emitting display device as claimed in claim 1, further comprising a transparent pixel defining film located on each of the first light-shielding pixel defining film and the second light-shielding pixel defining film.

13. The light-emitting display device as claimed in claim 7, further comprising: a transistor connected to the light-emitting element between the substrate and the planarization film.

14. The light-emitting display device as claimed in claim 13, wherein the transistor includes an active layer comprising an oxide semiconductor in each of the first region and the second region.

15. The light-emitting display device as claimed in claim 14, wherein the mobility of the active layer in the second region is greater than the mobility of the active layer in the first region.

16. The light-emitting display device as claimed in claim 14, further comprising: a light-shielding pattern located below the active layer.

17. The light-emitting display device as claimed in claim 16, wherein the transistor comprises: a gate electrode overlapping the active layer; and a first source-drain electrode and a second source-drain electrode, respectively connected to the active layer, wherein one of the first source-drain electrode and the second source-drain electrode is connected to the light-shielding pattern.

18. The light-emitting display device as claimed in claim 13, wherein the transistor includes a gate connection electrode connected to a gate electrode and a light-shielding pattern located in at least one of the first region and the second region.

19. The light-emitting display device as claimed in claim 1, further comprising a plurality of planarization films and a plurality of inorganic insulating films between the substrate and the light-emitting element, wherein at least one of the inorganic insulating films and the planarization films has a sidewall surrounding the light-transmitting portion.

20. The light-emitting display device as claimed in claim 19, wherein the sidewall of at least one of the planarization films and the inorganic insulating films between the substrate and the light-emitting element comprises a light-shielding pixel defining film.

Images