Plasma treatment unit

Abstract

The objective of this invention is to achieve, through a simple process, adjustment of plasma intensity in a plasma processing apparatus comprising multiple antennas, to generate plasma ions at a uniform density. The plasma processing apparatus comprises: a vacuum container (1); and a first antenna (31) and a second antenna (32), disposed outside the vacuum container (1), to generate plasma (P1) inside the vacuum container (1), wherein the first antenna (31) and the second antenna (32) are configured to be movable relative to each other.

Description

[Technical Field]

[0001] This disclosure relates to a plasma processing apparatus. [Previous Technology]

[0002] In chemical vapor deposition (CVD), it is required to make the plasma ion density uniform in the vicinity of the object. Therefore, plasma processing apparatuses sometimes employ a structure including multiple short antennas (inductively coupled antennas), as described in Patent Document 1 or Patent Document 2. [Prior Art Documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2016-072065 [Patent Document 2] Japanese Patent Application Publication No. 2014-192318 [Summary of the Invention]

[0004] [Problem to be Solved by the Invention] However, the plasma processing apparatus of Patent Document 1 or Patent Document 2 suffers from the following situation: the plasma intensity is strong between two adjacent antennas, making it difficult to adequately ensure the uniformity of plasma ion density within the plasma processing apparatus. Moreover, the distribution of plasma ion density is determined by the design related to the spacing between the antennas. Therefore, in order to adjust the distribution of plasma ion density within the temporarily completed plasma processing apparatus, it is necessary to open the vacuum space within the plasma processing apparatus to the atmosphere and adjust the spacing between the antennas, which is cumbersome.

[0005] The purpose of this disclosure is to achieve, through a simple process, adjustment of plasma intensity in a plasma processing apparatus including multiple antennas, thereby generating plasma ions at a uniform density.

[0006] [Means for Solving the Problem] In order to solve the aforementioned problem, a plasma processing apparatus of the present invention includes: a vacuum container, the interior of which is evacuated by a vacuum; and a plurality of antennas disposed outside the vacuum container, wherein plasma is generated inside the vacuum container by flowing a high-frequency current. When one of two adjacent antennas among the plurality of antennas is designated as a first antenna and the other as a second antenna, the first antenna and the second antenna are configured to be movable relative to each other, such that the area of ​​the region where the first plane and the second plane coincide when viewed from a first direction orthogonal to a first plane including the extending direction of the first antenna or a second plane including the extending direction of the second antenna is changed.

[0007] [Effects of the Invention] According to one aspect of the present disclosure, for a plasma processing apparatus including multiple antennas, the plasma intensity can be adjusted by a simple process, thereby generating plasma ions at a uniform density.

Implementation Method

[0009] <Structure of Plasma Processing Apparatus 100> FIG1 is a cross-sectional view showing an example of the structure of the plasma processing apparatus 100 according to the embodiment of the present disclosure. In FIG1, the direction in which the first antenna 31 and the second antenna 32 are arranged is defined as the X-axis direction, the direction from the vacuum container 1 toward the high-frequency window 2 is defined as the positive Z-axis direction, and the direction orthogonal to both the X-axis and Z-axis directions is defined as the Y-axis direction. The X-axis and Z-axis directions are orthogonal to each other. The definition of the directions explained here also applies to other figures.

[0010] The plasma processing apparatus 100 uses an inductively coupled plasma P1 to process a substrate W1 disposed inside the vacuum container 1. The substrate W1 is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic electroluminescence (EL) display, or a flexible substrate for a flexible display. The processing performed on the substrate W1 includes, for example, film formation by chemical vapor deposition (CVD) or sputtering, etching, ashing, or removal of coating films by plasma.

[0011] As shown in Figure 1, the plasma processing apparatus 100 includes a vacuum container 1, a high-frequency window 2, a vacuum exhaust device 4, and a high-frequency power supply 5. Furthermore, the plasma processing apparatus 100 includes a first antenna 31 and a second antenna 32 as multiple antennas. Here, one of two adjacent antennas among the multiple antennas is designated as the first antenna 31, and the other is designated as the second antenna 32.

[0012] Furthermore, the plasma processing apparatus 100 may also include three or more antennas as multiple antennas. In this case, one of the two adjacent antennas among the three or more antennas is designated as the first antenna 31, and the other is designated as the second antenna 32. From now on, the description of the first antenna 31 and the second antenna 32 will apply to any two adjacent antennas among the three or more antennas.

[0013] <Structure of Vacuum Container 1 and Vacuum Exhaust Device 4> The vacuum container 1 is, for example, a metal container, and an opening 11 is formed on the upper wall 1A on the positive Z-axis side of the vacuum container 1. The opening 11 is formed in the upper wall 1A at a position facing the first antenna 31 and the second antenna 32. The vacuum container 1 is electrically grounded by connecting to a ground wire.

[0014] The interior of the vacuum container 1 is evacuated by a vacuum exhaust device 4. The vacuum exhaust device 4 has a pump for evacuating the interior of the vacuum container 1. Gas GS is introduced into the interior of the vacuum container 1, for example, via a flow regulator (not shown) or at least one gas inlet 12 formed in the vacuum container 1.

[0015] The gas GS can be set to a gas corresponding to the processing performed on the substrate W1. For example, when forming a film on the substrate W1 by plasma CVD, the gas GS is a raw material gas or a gas diluted with a dilution gas (e.g., H2). When the raw material gas is SiH4, a Si film can be formed on the substrate W1; when the raw material gas is SiH4+NH3, a SiN film can be formed on the substrate W1; when the raw material gas is SiH4+O2, a SiO2 film can be formed on the substrate W1; and when the raw material gas is SiF4+N2, a SiN:F film (silicon nitride fluoride film) can be formed on the substrate W1.

[0016] <Structure of High-Frequency Window 2> FIG2 is a cross-sectional view showing an example of the peripheral structure of the first antenna 31 and the second antenna 32 included in the plasma processing apparatus 100 shown in FIG1. ​​The high-frequency window 2 is a portion that introduces the high-frequency magnetic field generated by the first antenna 31 and the second antenna 32 into the vacuum container 1 so that plasma P1 is generated inside the vacuum container 1. As shown in FIG1 and FIG2, the high-frequency window 2 includes a flange portion 21 and a dielectric plate 22. The high-frequency window 2 is provided on the upper wall 1A of the vacuum container 1.

[0017] When viewing the high-frequency window 2 from the positive Z-axis direction towards the negative Z-axis direction, the flange portion 21 constitutes the outer frame portion of the high-frequency window 2. This forms an opening 21A in the high-frequency window 2. The flange portion 21 is made of metal, and its mechanical strength is preferably higher than that of the dielectric plate 22. The thickness of the flange portion 21 along the Z-axis direction is preferably greater than the thickness of the dielectric plate 22 along the Z-axis direction.

[0018] The flange portion 21 is electrically grounded by being provided in the electrically grounded vacuum container 1. By being electrically grounded, the flange portion 21 allows the magnetic field generated by the first antenna 31 and the second antenna 32 to be transmitted into the interior of the vacuum container 1. Furthermore, when a high-frequency current I1 is introduced into the first antenna 31 and the second antenna 32, the flange portion 21 blocks the electric field generated by the potential of the first antenna 31 and the second antenna 32. The magnetic field generated by the first antenna 31 and the second antenna 32 is introduced into the interior of the vacuum container 1 through the opening 21A via the dielectric plate 22.

[0019] The flange portion 21 may contain, for example, a metallic material selected from the group consisting of Cu, Al, Zn, Ni, Sn, Si, Ti, Fe, Cr, Nb, C, Mo, W or Co, or an alloy thereof (e.g., stainless steel alloy or aluminum alloy).

[0020] A sealing portion S1, included in the plasma treatment apparatus 100, is provided between the flange portion 21 and the upper wall 1A. The sealing portion S1 provides a vacuum seal between the flange portion 21 and the upper wall 1A. The sealing portion S1 may be, for example, an O-ring or a gasket such as a rubber sheet. Furthermore, the sealing portion S1 may also be, for example, an adhesive material, or in this case, a lubricating oil such as a high-viscosity vacuum grease with low vapor pressure.

[0021] <Structure of Dielectric Plate 22> The dielectric plate 22 is provided on the flange portion 21 in such a way that it blocks the opening 21A from the outside of the vacuum container 1. Therefore, the dielectric plate 22 is arranged to block the opening 11 formed in the vacuum container 1 facing the first antenna 31 and the second antenna 32. The dielectric plate 22 blocks the movement of gas at the opening 21A, that is, it blocks the movement of gas at the opening 11. In this way, the dielectric plate 22 maintains the airtightness of the interior of the vacuum container 1.

[0022] The dielectric plate 22 is a flat plate that entirely contains a dielectric material. The dielectric plate 22 may contain inorganic materials such as ceramics like alumina, silicon carbide, or silicon nitride, quartz glass, or alkali-free glass, or resin materials such as fluoropolymers. The dielectric plate 22 transmits the magnetic field generated by the first antenna 31 and the second antenna 32 into the interior of the vacuum container 1. This creates a magnetic field inside the vacuum container 1, generating an induced electric field. The gas GS is ionized by the induced electric field, thereby generating plasma P1.

[0023] The dielectric plate 22 preferably comprises a single plate. This makes it easy to reduce the thickness of the dielectric plate 22. Consequently, the distance between the first antenna 31 and the second antenna 32 and the vacuum container 1 can be easily shortened, thus making it easier to generate a high-frequency magnetic field efficiently inside the vacuum container 1.

[0024] In the Z-axis direction, a sealing portion S1 is provided between the flange portion 21 and the dielectric plate 22. The sealing portion S1 provides a vacuum seal between the flange portion 21 and the dielectric plate 22. The sealing portion S1 is used to fix the flange portion 21 and the dielectric plate 22.

[0025] <Structure of the First Antenna 31 and the Second Antenna 32> The first antenna 31 and the second antenna 32 are disposed outside the vacuum container 1, positioned at a location facing the upper wall 1A of the vacuum container 1. The first antenna 31 and the second antenna 32 are used to generate a magnetic field by flowing a high-frequency current I1, thereby generating plasma P1 inside the vacuum container 1. The first antenna 31 and the second antenna 32 are rod-shaped or cylindrical.

[0026] The first antenna 31 and the second antenna 32 are bent on both sides toward the positive Z-axis, that is, bent toward the direction away from the vacuum container 1. Specifically, the first antenna 31 includes a first extension portion 311, a second extension portion 312 and a third extension portion 313. The second antenna 32 includes a first extension portion 321, a second extension portion 322 and a third extension portion 323.

[0027] Regarding the first antenna 31, the first extension portion 311 and the third extension portion 313 extend along the Z-axis direction, and the second extension portion 312 is the portion between the first extension portion 311 and the third extension portion 313, and extends along the X-axis direction. The second extension portion 312 extends parallel to the dielectric plate 22.

[0028] The first extension portion 311 has one end of the first antenna 31, namely the power supply end 31A, which is connected to the high-frequency power supply 5 via a matching circuit (not shown). The third extension portion 313 has the other end of the first antenna 31, namely the end portion 31B, which is connected to the power supply end 32A of the second antenna 32 via a wiring 3W. In this way, the first antenna 31 and the second antenna 32 are connected in series with each other, thereby reducing the number of high-frequency power supplies 5.

[0029] Regarding the second antenna 32, the first extension portion 321 and the third extension portion 323 extend along the Z-axis direction, and the second extension portion 322 is the portion between the first extension portion 321 and the third extension portion 323, and extends along the X-axis direction. The second extension portion 322 extends parallel to the dielectric plate 22.

[0030] The first extension portion 321 has one end of the second antenna 32, namely the power supply end 32A. The third extension portion 323 has the other end of the second antenna 32, namely the end portion 32B, which is electrically grounded by connecting to the ground wire G1. Furthermore, the end portion 32B may also be connected to the ground wire G1 via a capacitor or a coil, etc.

[0031] <Structure of High-Frequency Power Supply 5> The high-frequency power supply 5 can energize the first antenna 31 and the second antenna 32 with a high-frequency current I1. The frequency of the high-frequency power supply is, for example, a typical 13.56 MHz, but is not limited to this and can be appropriately changed. The high-frequency power supply 5 is connected to the ground wire. By introducing the high-frequency current I1 into the first antenna 31 and the second antenna 32 through the high-frequency power supply 5, a magnetic field is generated around the first antenna 31 and the second antenna 32.

[0032] <Movement of the First Antenna 31 and the Second Antenna 32> Figure 3 is a diagram illustrating the movement of the first antenna 31 and the second antenna 32 shown in Figure 2. In Figure 3, the vacuum container 1 and the high-frequency window 2 in the structure shown in Figure 2 are omitted. The first antenna 31 and the second antenna 32 are configured to be movable along the X-axis. The plasma processing apparatus 100 includes a movement mechanism (not shown) that allows each of the first antenna 31 and the second antenna 32 to move separately in the X-axis direction.

[0033] Here, as shown by symbol 301 in FIG3, the first plane SF1 is defined as a plane that includes the extension direction of the first antenna 31. The extension direction of the first antenna 31 is the extension direction of the first extension portion 311, the second extension portion 312 and the third extension portion 313.

[0034] In symbol 301 of Figure 3, the boundary line of the first plane SF1 is represented by a single-point chain line. That is, the first plane SF1 is the region enclosed by a single-point chain line in a plane parallel to the XZ plane and containing the first antenna 31. The boundary line of the first plane SF1 coincides with the first extension portion 311, the second extension portion 312, and the third extension portion 313. The boundary line of the first plane SF1 forms a quadrilateral containing three sides that coincide with the first extension portion 311, the second extension portion 312, and the third extension portion 313.

[0035] Furthermore, as shown by symbol 302 in FIG3, the second plane SF2 is defined as a plane that includes the extension direction of the second antenna 32. The extension direction of the second antenna 32 is the extension direction of the first extension portion 321, the second extension portion 322 and the third extension portion 323.

[0036] In symbol 302 of Figure 3, the boundary line of the second plane SF2 is represented by a dashed line. That is, the second plane SF2 is the region enclosed by the dashed line in a plane parallel to the XZ plane and containing the second skylight 32. The boundary line of the second plane SF2 coincides with the first extension 321, the second extension 322, and the third extension 323. The boundary line of the second plane SF2 forms a quadrilateral containing three sides that coincide with the first extension 321, the second extension 322, and the third extension 323.

[0037] Furthermore, between symbols 301 and 303 in Figure 3, it is assumed that the positions of the first antenna 31 and the second antenna 32 are the same. At this time, the region SF3 where the first plane SF1 and the second plane SF2 overlap is shown by symbol 303 in Figure 3, which is the region enclosed by the two-point chain line.

[0038] Specifically, region SF3 is the region where the first plane SF1 and the second plane SF2 coincide when viewed from the Y-axis direction. That is, region SF3 is the region where the first plane SF1 and the second plane SF2 coincide when viewed from a first direction orthogonal to either the first plane SF1 or the second plane SF2. The first direction is the Y-axis direction.

[0039] In the plasma processing apparatus 100, the first antenna 31 and the second antenna 32 are configured to be movable relative to each other, thereby changing the area of ​​the SF3 region. Specifically, the moving mechanism included in the plasma processing apparatus 100 moves the first antenna 31 and the second antenna 32 respectively in the X-axis direction, thereby changing the area of ​​the SF3 region.

[0040] This allows for easy adjustment of the plasma intensity in the vicinity between the first antenna 31 and the second antenna 32 inside the vacuum container 1. Therefore, for a plasma processing apparatus 100 including multiple antennas, the plasma intensity can be adjusted through a simple process, thereby generating plasma ions at a uniform density.

[0041] <Modification 1> Figure 4 is a cross-sectional view showing an example of the peripheral structure of the first antenna 31 and the second antenna 32 included in the plasma processing apparatus of Modification 1 of this disclosure. The plasma processing apparatus of Modification 1 differs from the plasma processing apparatus 100 in that it includes a capacitor element 33. In the plasma processing apparatus of Modification 1, the first antenna 31 and the second antenna 32 are connected by the capacitor element 33.

[0042] Specifically, the capacitor element 33 is connected between the end portion 31B of the third extension portion 313 of the first antenna 31 and the power supply end 32A of the first extension portion 321 of the second antenna 32. The capacitor element 33 is a capacitor electrically connected in series with the adjacent first antenna 31 and second antenna 32. The capacitor is, for example, a vacuum capacitor. The first antenna 31 and the second antenna 32 are connected by the capacitor element 33, thereby reducing the reactance of the first antenna 31 and the second antenna 32, and also reducing the voltage of the first antenna 31 and the second antenna 32.

[0043] <Modification 2> FIG5 is a perspective view showing an example of the peripheral structure of the first antenna 31P and the second antenna 32P included in the plasma processing apparatus of Modification 2 of this disclosure. The plasma processing apparatus of Modification 2 differs from the plasma processing apparatus 100 in that: the first antenna 31 is changed to the first antenna 31P; the second antenna 32 is changed to the second antenna 32P; and a clamping member 34 is included.

[0044] The first antenna 31P differs from the first antenna 31 in that it includes a fourth extension portion 314. In the first antenna 31P, the first extension portion 311 is longer than the third extension portion 313. The fourth extension portion 314 extends from the third extension portion 313 in the negative X-axis direction. The fourth extension portion 314 is shorter than the second extension portion 312.

[0045] In Variation 2, the first plane SF1 is set as a plane that includes the extension direction of the first antenna 31P. The extension direction of the first antenna 31P is the extension direction of the first extension portion 311, the second extension portion 312, the third extension portion 313 and the fourth extension portion 314.

[0046] The boundary line of the first plane SF1 coincides with the first extension portion 311, the second extension portion 312, the third extension portion 313 and the fourth extension portion 314. The boundary line of the first plane SF1 forms a quadrilateral including four sides that coincide with the first extension portion 311, the second extension portion 312, the third extension portion 313 and the fourth extension portion 314.

[0047] The second antenna 32P differs from the second antenna 32 in that it includes a fourth extension portion 324. In the second antenna 32P, the first extension portion 321 is longer than the third extension portion 323. The fourth extension portion 324 extends from the third extension portion 323 in the positive X-axis direction. The fourth extension portion 324 is shorter than the second extension portion 322.

[0048] Furthermore, in Modification 2, the second plane SF2 is configured as a plane that includes the extension direction of the second antenna 32P. The extension direction of the second antenna 32P is the extension direction of the first extension portion 321, the second extension portion 322, the third extension portion 323, and the fourth extension portion 324.

[0049] The boundary line of the second plane SF2 coincides with the first extension portion 321, the second extension portion 322, the third extension portion 323 and the fourth extension portion 324. The boundary line of the second plane SF2 forms a quadrilateral containing four sides that coincide with the first extension portion 321, the second extension portion 322, the third extension portion 323 and the fourth extension portion 324.

[0050] In the plasma processing apparatus of Modification 2, the first antenna 31P and the second antenna 32P are in contact with each other. Specifically, the third extension 313 of the first antenna 31P and the third extension 323 of the second antenna 32P are in contact with each other. Power is supplied in series between the first antenna 31P and the second antenna 32P, thus simplifying the wiring. That is, there is no need for wiring to connect the first antenna 31P and the second antenna 32P.

[0051] The clamping member 34 has a first part 341 and a second part 342, which clamp the first antenna 31P and the second antenna 32P. The bolt B1 passes through the first part 341 and the second part 342, and the first part 341 and the second part 342 are fixed to each other by the bolt B1.

[0052] A through hole H1 is formed in the clamping member 34 for the first antenna 31P and the second antenna 32P to pass through. Specifically, a recess 341A is formed in the first part 341 and a recess 342A is formed in the second part 342. The first part 341 and the second part 342 are fixed to each other by bolt B1, thereby forming the through hole H1 by the recesses 341A and 342A.

[0053] The clamping member 34 rotates about the first antenna 31P and the second antenna 32P in a direction R1 that intersects the first plane SF1 or the second plane SF2. The direction R1 is either a left-hand rotation or a right-hand rotation relative to the positive Z-axis.

[0054] When the first antenna 31P and the second antenna 32P move along the X-axis, they deviate in the Y-axis direction, and the clamping member 34 rotates in direction R1. Furthermore, the first antenna 31P and the second antenna 32P maintain contact with each other while moving along the X-axis, that is, moving parallel to each other. This allows for fine-tuning of the plasma ion density distribution.

[0055] <Modification 3> Figure 6 is a perspective view showing an example of the peripheral structure of the first antenna 31P and the second antenna 32P included in the plasma processing apparatus of Modification 3 of this disclosure. The plasma processing apparatus of Modification 3 differs from the plasma processing apparatus of Modification 2 in that it includes a capacitor element 33 and an insulating member 35.

[0056] The capacitor element 33 is connected to the fourth extension 314 of the first antenna 31P via the connecting member 361. The fourth extension 314 passes through the connecting member 361. Furthermore, the capacitor element 33 is connected to the fourth extension 324 of the second antenna 32P via the connecting member 362. The fourth extension 324 passes through the connecting member 362.

[0057] In the plasma processing apparatus of Modification 2, an insulating member 35 is provided between the first antenna 31P and the second antenna 32P. Specifically, the insulating member 35 is clamped by a clamping member 34 in a manner located between the first antenna 31P and the second antenna 32P. In other words, the insulating member 35 is clamped between a first portion 341 and a second portion 342. The first antenna 31P and the second antenna 32P are insulated from each other by the insulating member 35. The insulating member 35 is a flat insulating plate.

[0058] By providing an insulating member 35 between the first antenna 31P and the second antenna 32P, the current flowing between the first antenna 31P and the second antenna 32P is reduced, and a stable current flows between the first antenna 31P and the second antenna 32P through the capacitor element 33. This allows for a more uniform plasma ion density. Furthermore, it allows the first antenna 31P and the second antenna 32P to be closer together, enabling fine adjustment of the plasma ion density.

[0059] Figure 7 is a diagram showing the peripheral structure of the first antenna 31P and the second antenna 32P shown in Figure 6, viewed from the Y-axis direction. It shows how the first antenna 31P and the second antenna 32P move relative to each other. Figure 8 is a diagram showing the peripheral structure of the first antenna 31P and the second antenna 32P shown in Figure 7, viewed from the Z-axis direction. It shows how the first antenna 31P and the second antenna 32P move relative to each other.

[0060] The peripheral structures of the first antenna 31P and the second antenna 32P shown in Figures 7 and 8 are an example of structures for moving the first antenna 31P and the second antenna 32P relative to each other. In addition, various other structures can be conceived for moving the first antenna 31P and the second antenna 32P relative to each other in one embodiment disclosed herein.

[0061] The diagram with symbol 801 in Figure 8 corresponds to the diagram with symbol 701 in Figure 7, and the diagram with symbol 802 in Figure 8 corresponds to the diagram with symbol 702 in Figure 7. Furthermore, the diagram with symbol 803 in Figure 8 corresponds to the diagram with symbol 703 in Figure 7, and the diagram with symbol 804 in Figure 8 corresponds to the diagram with symbol 704 in Figure 7. The diagrams with symbols 801 to 804 in Figure 8 are diagrams showing the peripheral structures of the first antenna 31P and the second antenna 32P, respectively, as viewed from the Z-axis direction corresponding to the diagrams with symbols in Figure 7.

[0062] In the figures of Figure 7 (symbol 701) and Figure 8 (symbol 801), the first antenna 31P and the second antenna 32P are in a first state where the first plane SF1 and the second plane SF2 do not coincide when viewed from the Y-axis direction. Moreover, the first antenna 31P and the second antenna 32P are arranged relative to each other along the X-axis direction, and the clamping member 34 and the insulating member 35 are arranged to extend along the Y-axis direction.

[0063] Furthermore, as shown by symbol 801 in FIG8, the recess 341A is longer than the third extension portion 313 of the first antenna 31P along the extension direction of the clamping member 34. The recess 342A is longer than the third extension portion 323 of the second antenna 32P along the extension direction of the clamping member 34.

[0064] When the first antenna 31P moves in the positive X-axis direction and the second antenna 32P moves in the negative X-axis direction, as shown by symbol 702 in Figure 7 and symbol 802 in Figure 8, the first antenna 31P and the second antenna 32P deviate from each other in the Y-axis direction. At this time, the clamping member 34 and the insulating member 35 rotate in direction R2 about the third extension portion 313 and the third extension portion 323 as axes. Direction R2 is the direction that intersects the first plane SF1 or the second plane SF2, and is a left-hand rotation direction relative to the negative Z-axis direction.

[0065] By rotating the clamping member 34 and the insulating member 35, as shown by reference numeral 703 in FIG7 and reference numeral 803 in FIG8, the third extension portion 313 and the third extension portion 323 are arranged relative to each other along the Y-axis direction. Moreover, the first antenna 31P and the second antenna 32P are arranged offset relative to each other in the Y-axis direction, and the clamping member 34 and the insulating member 35 are arranged to extend along the X-axis direction.

[0066] Furthermore, a region SF3 is generated where the first plane SF1 and the second plane SF2 coincide when viewed from the Y-axis direction. That is, in the figures of symbol 703 in FIG7 and symbol 803 in FIG8, the state of the first antenna 31P and the second antenna 32P becomes a second state where the first plane SF1 and the second plane SF2 coincide when viewed from the Y-axis direction.

[0067] Therefore, by rotating the clamping member 34, the system can switch between a first state where the first plane SF1 and the second plane SF2 do not coincide when viewed from the Y-axis direction, and a second state where the first plane SF1 and the second plane SF2 coincide. Thus, by utilizing the simple structure of the clamping member 34 that clamps the first antenna 31P and the second antenna 32P, the state where the first plane SF1 and the second plane SF2 do not coincide can be set to a state where they coincide, thereby allowing the plasma intensity to be adjusted.

[0068] Furthermore, as shown by symbol 704 in Figure 7 and symbol 804 in Figure 8, consider the case where the first antenna 31P and the second antenna 32P are offset from each other in the Y-axis direction, with the first antenna 31P moving in the positive X-axis direction and the second antenna 32P moving in the negative X-axis direction. In this case, as the first antenna 31P and the second antenna 32P move, the area of ​​the region SF3 where the first plane SF1 and the second plane SF2 overlap increases.

[0069] Therefore, the through hole H1 is formed with the following cross-sectional shape, that is, when viewed from the axis of rotation of the clamping member 34, in the second state, the relative movement between the first antenna 31P and the second antenna 32P can be performed in the direction D1 towards the direction where the area of ​​the region SF3 where the first plane SF1 and the second plane SF2 overlap increases.

[0070] In other words, a through hole H1 is formed in the clamping member 34 so that the first antenna 31P and the second antenna 32P can move relative to each other from the state shown by symbol 803 in FIG8 to the state shown by symbol 804 in FIG8. The rotational axis of the clamping member 34 is in the Z-axis direction. By utilizing this simple structure of forming a through hole H1 in the clamping member 34, relative movement between the first antenna 31P and the second antenna 32P can be realized, thereby enabling adjustment of the plasma intensity.

[0071] <Summary> The plasma processing apparatus of aspect 1 of the present invention includes: a vacuum container, the interior of which is evacuated by a vacuum; and a plurality of antennas disposed outside the vacuum container, wherein plasma is generated inside the vacuum container by flowing a high-frequency current. When one of two adjacent antennas among the plurality of antennas is designated as a first antenna and the other as a second antenna, the first antenna and the second antenna are configured to be movable relative to each other, such that the area of ​​the region where the first plane and the second plane coincide when viewed from a first direction orthogonal to a first plane including the extension direction of the first antenna or a second plane including the extension direction of the second antenna is changed.

[0072] In the plasma processing apparatus of Embodiment 2 of the present invention, the first antenna and the second antenna may be connected by a capacitor element, as in Embodiment 1.

[0073] In the plasma processing apparatus of Embodiment 3 of the present invention, in Embodiment 2, an insulating member is provided between the first antenna and the second antenna.

[0074] In the plasma processing apparatus of Embodiment 4 of the present invention, the first antenna and the second antenna may also be in contact with each other, as in Embodiment 1.

[0075] The plasma processing apparatus of aspect 5 of the present invention may also include, in any of aspects 1 to 4, a clamping member having a through hole through which the first antenna and the second antenna pass, and clamping the first antenna and the second antenna. The clamping member rotates about the first antenna and the second antenna as an axis in a direction intersecting the first plane or the second plane. By rotating the clamping member, the first state in which the first plane and the second plane do not coincide when viewed from the first direction is switched between a first state and a second state in which the first plane and the second plane coincide.

[0076] In the plasma processing apparatus of Embodiment 6 of the present invention, in Embodiment 5, the through hole is formed with the following cross-sectional shape, that is, when viewed from the axis of rotation of the clamping member, in the second state, the relative movement between the first antenna and the second antenna can be performed in the direction that the area of ​​the region where the first plane and the second plane coincide increases.

[0077] <Notes> This disclosure is not limited to the described embodiments. Various changes can be made within the scope shown in the request. Structures obtained by appropriately combining multiple technical components disclosed in the embodiments are also included in the technical scope of this disclosure. [Simplified Explanation of the Diagram]

[0008] FIG1 is a cross-sectional view showing an example of the structure of the plasma processing apparatus according to an embodiment of the present disclosure. FIG2 is a cross-sectional view showing an example of the peripheral structure of the first antenna and the second antenna included in the plasma processing apparatus shown in FIG1. ​​FIG3 is a diagram for explaining the movement of the first antenna and the second antenna shown in FIG2. FIG4 is a cross-sectional view showing an example of the peripheral structure of the first antenna and the second antenna included in the plasma processing apparatus of Modified Example 1 of the present disclosure. FIG5 is a perspective view showing an example of the peripheral structure of the first antenna and the second antenna included in the plasma processing apparatus of Modified Example 2 of the present disclosure. FIG6 is a perspective view showing an example of the peripheral structure of the first antenna and the second antenna included in the plasma processing apparatus of Modified Example 3 of the present disclosure. FIG7 is a view of the peripheral structure of the first antenna and the second antenna shown in FIG6 viewed from the Y-axis direction, showing the relative movement of the first antenna and the second antenna. FIG8 is a view of the peripheral structure of the first antenna and the second antenna shown in FIG7 viewed from the Z-axis direction, showing the relative movement of the first antenna and the second antenna.

Claims

1. A plasma treatment apparatus, comprising: Vacuum container, the interior of which is vented by vacuum; And multiple antennas are disposed outside the vacuum container, and plasma is generated inside the vacuum container by flowing high-frequency current. When one of two adjacent antennas among the multiple antennas is designated as the first antenna and the other as the second antenna, the first antenna and the second antenna are configured to be movable relative to each other, such that the area of ​​the region where the first plane and the second plane coincide when viewed from a first direction orthogonal to a first plane containing the extension direction of the first antenna or a second plane containing the extension direction of the second antenna is changed, and the first plane and the second plane are orthogonal to the substrate.

2. The plasma treatment apparatus as claimed in claim 1, wherein, The first antenna and the second antenna are connected by a capacitor element.

3. The plasma treatment apparatus as claimed in claim 2, wherein, An insulating component is provided between the first antenna and the second antenna.

4. The plasma treatment apparatus as claimed in claim 1, wherein, The first antenna and the second antenna are in contact with each other.

5. The plasma treatment apparatus as claimed in claim 1, further comprising: The clamping member has a through hole through which the first antenna and the second antenna pass, and clamps the first antenna and the second antenna. The clamping member rotates about the first antenna and the second antenna as an axis in a direction intersecting the first plane or the second plane. By rotating the clamping member, it switches between a first state in which the first plane and the second plane do not coincide when viewed from the first direction and a second state in which the first plane and the second plane coincide.

6. The plasma treatment apparatus as claimed in claim 5, wherein, The through hole is formed with a cross-sectional shape as described below, that is, when viewed from the axis of rotation of the clamping member, in the second state, the relative movement between the first antenna and the second antenna is possible in the direction that the area of ​​the region where the first plane and the second plane coincide increases.

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