High-voltage semiconductor device

TWI942247BActive Publication Date: 2026-10-11UNITED MICROELECTRONICS CORP
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Patent Information

Application Number
TW114115648
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Filing Date
2025-04-25
Publication Date
2026-10-11
Estimated Expiration
2045-04-24

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  • Figure TWG2TB001915424_001
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    Figure TWG2TB001915424_003
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Abstract

A high-voltage semiconductor device includes a semiconductor substrate, a p-type drift region, an n-type doped region, and an isolation structure. The p-type drift region is disposed in the semiconductor substrate, and the n-type doped region is disposed within the p-type drift region, with the bottom of the n-type doped region connected to the bottom of the p-type drift region. The isolation structure is at least partially disposed within the n-type doped region. The p-type drift region includes a first side, and the n-type doped region includes a second side located horizontally between the first side and the isolation structure. The horizontal distance between the second side and the isolation structure is less than the horizontal distance between the first side and the isolation structure.
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Claims

1. A high-voltage semiconductor device, comprising: A semiconductor substrate; A p-type drift region is disposed in the semiconductor substrate; An n-type doped region is disposed in the p-type drift region, wherein the bottom of the n-type doped region is connected to the bottom of the p-type drift region; an isolation structure is at least partially disposed in the n-type doped region, wherein the p-type drift region includes a first side surface, and the n-type doped region includes a second side surface located in a horizontal direction between the first side surface and the isolation structure, and the distance between the second side surface and the isolation structure in the horizontal direction is less than the distance between the first side surface and the isolation structure in the horizontal direction; and a gate structure is disposed on the semiconductor substrate, wherein at least a portion of the isolation structure is disposed below the gate structure in a vertical direction, and the first side surface and the second side surface are located below the gate structure in the vertical direction.

2. The high-voltage semiconductor device as claimed in claim 1, wherein a bottom surface of the n-type doped region is coplanar with a bottom surface of the p-type drift region.

3. The high-voltage semiconductor device as claimed in claim 1, wherein the depth of the n-type doped region in the vertical direction is equal to the depth of the p-type drift region in the vertical direction.

4. The high-voltage semiconductor device as claimed in claim 1, wherein the distance between the second side and the isolation structure in the horizontal direction is greater than or equal to 0.16 times the distance between the first side and the isolation structure in the horizontal direction.

5. The high-voltage semiconductor device as claimed in claim 1, wherein the distance between the second side and the isolation structure in the horizontal direction is less than or equal to 0.5 times the distance between the first side and the isolation structure in the horizontal direction.

6. The high-voltage semiconductor device as claimed in claim 1, wherein the p-type drift region includes a plurality of p-type dopants, and the n-type doped region includes a plurality of n-type dopants and a portion of the p-type dopants in the p-type drift region.

7. The high-voltage semiconductor device as described in claim 1, further comprising: A first p-type heavily doped region is disposed in the p-type drift region, wherein the first p-type heavily doped region is located in the n-type doped region, and the second side of the n-type doped region and the first p-type heavily doped region are respectively located on two opposite sides of the isolation structure in the horizontal direction.

8. The high-voltage semiconductor device as claimed in claim 7, wherein a portion of the n-type doped region and the first p-type heavily doped region are located on opposite sides of the isolation structure in the horizontal direction.

9. The high-voltage semiconductor device as claimed in claim 7, wherein the first side of the p-type drift region and the first p-type heavily doped region are located on opposite sides of the isolation structure in the horizontal direction.

10. The high-voltage semiconductor device as claimed in claim 7, wherein a portion of the p-type drift region and the first p-type heavily doped region are located on opposite sides of the isolation structure in the horizontal direction.

11. The high-voltage semiconductor device as described in claim 7, further comprising: An n-type doped well region is disposed in the semiconductor substrate, wherein a portion of the n-type doped well region and a portion of the p-type drift region are respectively located on two opposite sides of the gate structure in the horizontal direction.

12. The high-voltage semiconductor device as claimed in claim 11, wherein the n-type doped region includes a plurality of first n-type dopants, the n-type doped well region includes a plurality of second n-type dopants, and each of the first n-type dopants is the same as each of the second n-type dopants.

13. The high-voltage semiconductor device as described in claim 11, further comprising: A second p-type heavily doped region is disposed in the n-type doped well region, wherein the first p-type heavily doped region and the second p-type heavily doped region are respectively located on the two opposite sides of the gate structure in the horizontal direction.

14. The high-voltage semiconductor device as claimed in claim 13, wherein the first p-type heavily doped region is a drain doped region and the second p-type heavily doped region is a source doped region.

15. The high-voltage semiconductor device as described in claim 1, further comprising: An n-type doped deep well region is disposed in the semiconductor substrate, wherein a portion of the n-type doped deep well region is located below the p-type drift region and the n-type doped region in the vertical direction.

16. The high-voltage semiconductor device as claimed in claim 15, wherein a portion of the n-type doped region is located in the vertical direction between the isolation structure and the n-type doped deep well region.

17. The high-voltage semiconductor device as claimed in claim 15, wherein the n-type doped region is directly connected to the n-type doped deep well region located below the n-type doped region in the vertical direction.

18. The high-voltage semiconductor device as claimed in claim 15, wherein the p-type drift region is directly connected to the n-type doped deep well region located below the p-type drift region in the vertical direction.

19. The high-voltage semiconductor device as claimed in claim 1, wherein the length of the n-type doped region in the horizontal direction is less than the length of the p-type drift region in the horizontal direction.

Citation Information

Patent Citations

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