epitaxial structure

Abstract

A method for manufacturing a light-emitting element includes providing an epitaxial structure comprising a substrate, a buffer layer, a highly doped semiconductor layer, a first type doped semiconductor layer, a light-emitting layer, and a second type doped semiconductor layer sequentially stacked; growing a second reflective layer on the second type doped semiconductor layer; peeling off the substrate; and performing an electrochemical etching process to etch the highly doped semiconductor layer.

Claims

1. An epitaxial structure comprising: a substrate; a buffer layer; a highly doped semiconductor layer having a doping concentration greater than or equal to 5E18; a first-type doped semiconductor layer; a light-emitting layer; and a second-type doped semiconductor layer; wherein, The substrate, the buffer layer, the highly doped semiconductor layer, the first type doped semiconductor layer, the light-emitting layer, and the second type doped semiconductor layer are stacked sequentially.

2. The epitaxial structure as described in claim 1, comprising a first reflective layer disposed between the highly doped semiconductor layer and the first type doped semiconductor layer.

3. The epitaxial structure as described in claim 2, wherein the first reflective layer is a nanoporous Bragg mirror or a dielectric mirror.

4. The epitaxial structure as described in claim 1, wherein the total thickness of the first type doped semiconductor layer, the light-emitting layer, and the second type doped semiconductor layer is greater than or equal to 50 nm and less than or equal to 2000 nm.

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