Process chamber and semiconductor process equipment

Abstract

A process chamber and semiconductor manufacturing equipment are disclosed. The process chamber includes: a chamber body with an inlet at its top for supplying process gas into the chamber body; a first turntable rotatably disposed within the chamber body about a first axis and located below the inlet, the axis of the inlet being parallel to the first axis; and a second turntable for holding a wafer, rotatably disposed on the first turntable about a second axis. By providing an inlet at the top of the chamber body along the first axis, the process chamber of this application ensures that the diffusion of the process gas is consistent both inside and outside the first turntable when it reaches the first turntable, thus achieving uniform diffusion and ensuring wafer consistency.

Description

[Technical Field]

[0001] This application relates to the field of semiconductor manufacturing, and more specifically, to a process chamber and semiconductor process equipment. [Previous Technology]

[0002] Currently, in the semiconductor field, the main method used for epitaxial layer growth of substrates is chemical vapor deposition (CVD). This method mainly utilizes the reaction source to generate atoms through a pyrolysis reaction at high temperatures (above 650 degrees Celsius), and then recombines them on the wafer surface to form a thin film.

[0003] Existing epitaxial wafer chambers can be divided into single-cavity single-wafer type and single-cavity multi-wafer type. Single-cavity single-wafer type is generally used for single epitaxy of medium and large-sized silicon carbide wafers such as 6-inch or 8-inch; while single-cavity multi-wafer type is generally used for multi-wafer epitaxy of small and medium-sized silicon carbide wafers of 6-inch and below.

[0004] In a single-cavity multi-wafer epitaxial wafer device, multiple small disks are set on a large disk, and the wafers are set on the small disks. The epitaxial wafer device delivers process gas into the process cavity through an air intake structure, which reacts with the wafers on the small disks. However, the air intake structure in the prior art is unreasonable and cannot guarantee the consistency of the diffusion uniformity of the process gas when it reaches the inner and outer sides of the large disk. [Summary of the Invention]

[0005] This application aims to at least solve the problem in the prior art that the air intake structure is unreasonable and cannot guarantee the uniformity of diffusion when the process gas arrives at the inner and outer sides of the disk, and proposes a process chamber and semiconductor process equipment.

[0006] To achieve the purpose of this application, a process chamber is provided, comprising: a chamber body having an air inlet at its top for supplying process gas into the chamber body; a first turntable rotatably disposed within the chamber body about a first axis and located below the air inlet, the axial direction of the air inlet being parallel to the first axis; and a second turntable for carrying a wafer, the second turntable being rotatably disposed on the first turntable about a second axis.

[0007] In some embodiments, the air inlets are in multiple groups, with multiple air inlets in the same group and spaced apart around the first axis, and the air inlets in different groups are spaced apart in the radial direction of the first turntable, and the air inlets in adjacent groups are staggered in the circumferential direction.

[0008] In some embodiments, it further includes: an exhaust pipe having an exhaust port communicating with the interior of the chamber body; a first end of the exhaust pipe extending to the position of the first turntable, and a second end of the exhaust pipe located outside the chamber body; there are multiple exhaust ports, which are distributed circumferentially at intervals on the outer peripheral wall of the exhaust pipe near its first end.

[0009] In some embodiments, a particle collection structure is provided inside the exhaust pipe, and the particle collection structure is located between the exhaust port and the second end of the exhaust pipe.

[0010] In some embodiments, the particle collection structure is annular and is connected to the inner peripheral wall of the exhaust pipe. The top of the particle collection structure in the vertical direction forms a collection groove with the inner peripheral wall of the exhaust pipe for collecting particles.

[0011] In some embodiments, the exhaust pipe includes: a first exhaust pipe passing through the top of the chamber body, a first end of the first exhaust pipe extending to the top of the first turntable, the first exhaust pipe being used to discharge the process gas above the first turntable.

[0012] In some embodiments, the exhaust pipe further includes: a second exhaust pipe, which passes through the bottom of the chamber body, a first end of the second exhaust pipe being driven to the first turntable, a second end of the second exhaust pipe being used to connect to a drive source, and the second exhaust pipe being used to discharge the process gas below the first turntable and drive the first turntable to rotate around the first axis.

[0013] In some embodiments, the first turntable is provided with a connecting hole, which extends from the top of the first turntable to the bottom; the first end of the first exhaust pipe is sealed to the top of the first turntable, and the interior of the first exhaust pipe is connected to the connecting hole; the first end of the second exhaust pipe is sealed to the bottom of the first turntable, and the interior of the second exhaust pipe is connected to the connecting hole.

[0014] In some embodiments, the process chamber further includes a dust collection ring, which is sleeved on the outer peripheral wall of the first turntable. The first turntable and the dust collection ring divide the interior of the chamber body into an upper chamber and a lower chamber. The dust collection ring has a dust collection space inside that connects the upper chamber and the lower chamber to collect particles in the process gas flowing through the dust collection space.

[0015] In some embodiments, an air inlet hole is provided at the top of the dust collection ring, and the dust collection space is connected to the upper cavity through the air inlet hole; an air outlet hole is provided on the inner peripheral wall of the dust collection ring, and the dust collection space is connected to the lower cavity through the air outlet hole; a dust collection groove is provided on the inner wall of the dust collection space, the dust collection groove is located below the air inlet hole, and the air outlet hole is located between the dust collection groove and the air inlet hole in the vertical direction.

[0016] In some embodiments, there are multiple air inlet holes and air outlet holes distributed circumferentially around the first turntable, and the sum of the flow areas of all the air inlet holes is less than the sum of the flow areas of all the air outlet holes.

[0017] In some embodiments, the first exhaust pipe is rotatably disposed on the top of the chamber body and sealed in fit, the first end of the first exhaust pipe is driven connected to the second turntable, and the second end of the first exhaust pipe is driven connected to a drive source to drive the second turntable to rotate around the second axis.

[0018] In some embodiments, there are multiple second turntables, which are arranged around the first exhaust pipe. All the second turntables are driven to the first exhaust pipe so that the first exhaust pipe drives all the second turntables to rotate synchronously around their respective second axes, wherein the second axis is parallel to the first axis.

[0019] In some embodiments, the first exhaust pipe is provided with a first driving member, and the second turntable is provided with a second driving member that matches the first driving member. The first driving member and the second driving member drive each other to drive the first exhaust pipe to drive the second turntable to rotate around the second turntable.

[0020] In some embodiments, the first driving member is a first gear disposed on the outer peripheral wall of the first exhaust pipe, and the second driving member is a second gear disposed at the bottom of the first turntable, wherein the first gear meshes with the second gear.

[0021] In some embodiments, the process chamber further includes: a guard plate disposed above the first turntable and rotating synchronously with the first turntable, wherein a receiving space is formed between the bottom of the guard plate and the top of the first turntable, and the first drive member and the second drive member are located within the receiving space.

[0022] In some embodiments, the protective plate is provided with a third clearance hole and a fourth clearance hole, the second turntable is located in the third clearance hole and is clearance-fitted with the third clearance hole, and the first exhaust pipe passes through the fourth clearance hole and is clearance-fitted with the fourth clearance hole.

[0023] In some embodiments, the guard plate includes: an inner sub-plate, connected to the first turntable and located between the second turntable and the first exhaust pipe, the inner sub-plate being provided with the fourth clearance hole and the first clearance groove; and an outer sub-plate, detachably connected to the first turntable, the outer sub-plate being located on the side of the second turntable away from the first exhaust pipe, the outer sub-plate being provided with the second clearance groove, the first clearance groove and the second clearance groove forming the third clearance hole.

[0024] In some embodiments, the process chamber further includes: a lifting mechanism disposed below the first turntable, the lifting mechanism having multiple lifting rods, all of which extend to support the wafer; the first turntable is provided with multiple first clearance holes, each of which corresponds to one of the lifting rods; the second turntable is provided with multiple second clearance holes, the second turntable rotating relative to the first turntable to align the first clearance holes with the second clearance holes, so that the extended lifting rods pass through the first clearance holes and the second clearance holes and support the wafer.

[0025] According to a second aspect of this application, a semiconductor process apparatus is also disclosed, including a heating device and the aforementioned process chamber.

[0026] The process chamber of this application can ensure that the diffusion of process gas on the inner and outer sides of the first turntable is consistent when it reaches the first turntable by providing an air inlet hole on the top of the chamber body along the first axis direction. Therefore, the diffusion uniformity is also consistent, ensuring the consistency of the wafer.

Implementation Method

[0028] In order to enable those skilled in the art to better understand the technical solution of this application, the process chamber and semiconductor process equipment provided in this application will be described in detail below with reference to the accompanying drawings.

[0029] Currently, in the semiconductor field, the main method used for epitaxial layer growth of substrates is chemical vapor deposition (CVD). This method mainly utilizes the reaction source to generate atoms through a pyrolysis reaction at high temperatures (above 650 degrees Celsius), and then recombines them on the wafer surface to form a thin film.

[0030] Existing epitaxial wafer chambers can be divided into single-cavity single-wafer type and single-cavity multi-wafer type. Single-cavity single-wafer type is generally used for single epitaxy of medium and large-sized silicon carbide wafers such as 6-inch or 8-inch; while single-cavity multi-wafer type is generally used for multi-wafer epitaxy of small and medium-sized silicon carbide wafers of 6-inch and below.

[0031] Taking a single-cavity multi-wafer epitaxial wafer device as an example, the chemical vapor deposition equipment in the related technology shown in Figures 1 and 2 includes: a central drive shaft 1, a large disk 2, small disks 3, a central air intake mechanism 4, and an exhaust mechanism 5. Multiple small disks 3 are disposed on the large disk 2, and the small disks 3 are spaced apart circumferentially along the large disk 2, while the wafers are disposed on the small disks 3. The central air intake mechanism 4 is located at the center of the large disk 2 and blows process gas radially outwards towards the outer periphery of the large disk 2.

[0032] As shown in Figure 2, the central drive shaft 1 is connected to the bottom of the large disk 2 to drive the large disk 2 to rotate. The large disk 2 is provided with multiple receiving slots 6, and each small disk 3 is disposed within a receiving slot 6. Air passages 7 are provided inside the central drive shaft 1 and the large disk 2, and the air passages 7 communicate with the air inlet 8 at the bottom of the receiving slot 6. By providing the air inlet 8 at the bottom of the receiving slot 6, air can be blown onto the bottom of the small disk 3, thereby causing the small disk 3 to suspend and rotate under the action of the airflow. An exhaust mechanism 5 is disposed on the outer periphery of the large disk 2, and the large disk 2 is rotatable relative to the exhaust mechanism 5, through which process gases are discharged to the outside.

[0033] In use, the central drive shaft 1 drives the large disk 2 to rotate while simultaneously using air flotation to make the small disk 3 rotate as well, thereby achieving uniform contact between the wafer and the process gas. However, this method in related technologies has many drawbacks: First, due to the use of the central air intake mechanism 4, the process gas flows radially from the center of the large disk 2 towards the outer periphery of the large disk 2. As the process gas flows radially to the edge of the large disk 2, the airflow diffuses along the tangential direction of the large disk 2. This diffusion is uncertain and uncontrollable, resulting in a worse uniformity of the process gas closer to the outer side of the large disk 2. In particular, the uniformity of the airflow field at the edge of the large disk 2 is worse than that at the center of the large disk 2, thus affecting wafer quality. Second, the exhaust in related technologies relies on an exhaust mechanism 5 located on the outer periphery of the large disk 2. This exhaust mechanism 5 is fixed to the wall of the reaction chamber and is not fixed to the large disk 2. The large disk 2 moves relative to the exhaust mechanism 5 when it rotates. Multiple exhaust ports are evenly distributed on the exhaust mechanism 5. After the process gas is ejected from the central air intake mechanism 4, it flows radially along the large disk 2 to the exhaust mechanism 5 and is discharged through the exhaust ports. Because the concentration of the reaction source in the process gas is high at the center of the large disk 2, particles are easily generated. These particles fall onto the wafer surface with the airflow, causing defects. Simultaneously, the large disk 2 and the exhaust mechanism 5 rotate relative to each other. The airflow field near the edges of the large disk 2 and the exhaust ports is affected by this relative rotation, reducing uniformity. Third, due to the use of air-float rotation, the relative interaction between the small disk 3 and the airflow during suspension and rotation is complex and influenced by many factors. Therefore, it is impossible to adjust the number of rotations and speed of the small disk 3 simply by controlling the airflow magnitude. This results in poor controllability and stability of the small disk 3, leading to poor wafer quality consistency. Fourth, because the air-float rotation relies on the interaction between the airflow and the bottom surface of the small disk 3 to generate power, opening through-holes in the small disk 3 would not only reduce the interaction area between the airflow and the bottom of the small disk 3, affecting its suspension and rotation, but the airflow blowing through the through-holes would also affect the wafer. This is why it's impossible to use a lifting mechanism to lift the wafer through the through-hole. Furthermore, due to the poor controllability and stability of the small tray 3, even if the effects of the through-hole are overcome, it's difficult to align the through-hole with the telescopic rod of the lifting mechanism, making lifting impossible. In addition, particles generated by the friction between the robotic arm and the small tray 3 during transportation can easily affect wafer quality.

[0034] In order to solve the above problems, this application discloses a process chamber for semiconductor process equipment, such as chemical vapor deposition equipment.

[0035] As shown in Figure 3, the process chamber includes: a chamber body 10, a first turntable 20, and a second turntable 30. The top of the chamber body 10 has an air inlet 1222, which is used to deliver process gas into the chamber body 10; the first turntable 20 is rotatably disposed inside the chamber body 10 around a first axis A1 and is located below the air inlet 1222, the axis of the air inlet 1222 being parallel to the first axis A1; the second turntable 30 is used to support the wafer 100, the first turntable 20 is used to drive the second turntable 30 to rotate around the first axis A1, and the second turntable 30 is rotatably disposed on the first turntable 20 around a second axis A2.

[0036] In use, as the first turntable 20 rotates around the first axis A1, it will drive the second turntable 30 to rotate around the first axis A1 as well. At the same time, the second turntable 30 will also rotate around the second axis A2. The process gas enters the interior of the chamber body 10 through the air inlet 1222 at the top of the chamber body 10 and diffuses along the first axis A1 to the first turntable 20. Since the air inlet 1222 is located above the first turntable 20, the distance between the inner and outer sides of the first turntable 20 and the air inlet 1222 along the first axis A1 is the same. Since the axis of the air inlet 1222 is parallel to the first axis A1, the process gas is also blown towards the first turntable 20 along the first axis A1. Therefore, the time for the process gas to reach the inner and outer sides of the first turntable 20 is basically the same. Thus, it can be ensured that the diffusion of the process gas is consistent when it reaches the first turntable 20, thereby ensuring the consistency of the wafer. In related technologies, since the air inlet is located in the center and the air outlet flows radially along the large disk, which corresponds to the radial direction of the first turntable in this application, the process gas will first reach the inner side of the large disk and then the outer side of the large disk, thus making it impossible to guarantee the uniformity of diffusion when the process gas reaches the inner and outer sides of the large disk.

[0037] The process chamber of this application has an air inlet 1222 provided on the top of the chamber body 10 along the first axis A1 direction, which can ensure that the diffusion of process gas on the inner and outer sides of the first turntable 20 is consistent when it reaches the first turntable 20. Therefore, the diffusion uniformity is also consistent, ensuring the consistency of the wafer.

[0038] As shown in Figures 3 and 4, there are multiple sets of air inlets 1222. Multiple air inlets 1222 within the same set are spaced apart around the first axis A1. Air inlets 1222 from different sets are spaced apart radially on the first turntable 20, and adjacent sets of air inlets 1222 are staggered circumferentially. For example, each air inlet 1222 in the same set can be located on the same circumference around the first axis A1 and spaced apart on that circumference; air inlets 1222 from different sets are located on circumferences of different radii, and the gap between each air inlet 1222 on any circumference and each pair of adjacent air inlets 1222 on an adjacent circumference corresponds radially. By setting multiple sets of air inlets, process gas can simultaneously enter the chamber body 10 through different air inlets, thereby improving intake efficiency and uniformity. By spaced apart multiple air inlets 1222 within the same set around the first axis A1, the circumferential uniformity of the process gas can be improved. By distributing different groups of air inlets 1222 at intervals in the radial direction of the first turntable 20, the uniformity of the process gas distribution in the radial direction can be improved. Furthermore, by staggering adjacent groups of air inlets 1222 in the circumferential direction—that is, by offsetting one group of air inlets 1222 by a certain distance from the other in the circumferential direction—the gap between the air inlets 1222 of one group and the air inlets 1222 of the other group can be made complementary in terms of the process gas emitted from the adjacent groups of air inlets 1222, thereby improving the uniformity of the process gas in both the circumferential and radial directions.

[0039] For example, as shown in FIG3, the chamber body 10 includes: a chamber sidewall 11, an air intake assembly 12, and a chamber base 13. The chamber sidewall 11 has a transfer port 111. The air intake assembly 12 is connected to the top of the chamber sidewall 11, and the chamber base 13 is connected to the bottom of the chamber sidewall 11. The air intake assembly 12, the chamber sidewall 11, and the chamber base 13 form the internal space of the chamber body 10. The first turntable 20 and the second turntable 30 are located below the air intake assembly 12 and above the chamber base 13.

[0040] As shown in Figure 3, the air intake assembly 12 includes an air intake flange 121 and an orifice plate 122. As shown in Figure 4, the orifice plate 122 has a plurality of through air intake holes 1222 evenly distributed around the first axis A1. The orifice plate 122 covers the top of the chamber side wall 11 and is sealed to the chamber side wall 11. Each air intake hole 1222 is connected to the interior of the chamber body 10.

[0041] As shown in Figure 5, the intake flange 121 has a first side and a second side in a direction parallel to the first axis A1. Multiple annular grooves 1212 are arranged around the first axis A1 on the first side of the intake flange 121. These annular grooves 1212 are radially distributed from the inside out and nested sequentially. Multiple sets of intake ports 1213 are arranged on the second side of the intake flange 121. Each set of intake ports 1213 corresponds one-to-one with one of the annular grooves 1212, and each set of intake ports 1213 communicates with its corresponding annular groove 1212. Multiple intake ports 1213 exist within the same set and are spaced apart circumferentially. Intake ports 1213 from different sets are staggered circumferentially.

[0042] The first side of the inlet flange 121 is fastened to the orifice plate 122. Multiple annular grooves 1212 and the orifice plate 122 form multiple annular flow equalization cavities. All flow equalization cavities are connected to the chamber body 10 through inlet holes 1222. The inlet port 1213 of the inlet flange 121 is connected to the inlet pipeline. After the process gas in the inlet pipeline enters the flow equalization cavity through multiple inlet ports 1213, it can achieve uniform distribution and stabilize the pressure and flow of the process gas in the flow equalization cavity. Multiple flow equalization cavities form concentric ring cavities, and the volume of multiple flow equalization cavities increases sequentially from the center to the edge of the inlet flange 121. Therefore, the number of corresponding inlet ports 1213 gradually increases. In order to reduce the mutual influence of air intake between different flow equalization cavities, adjacent groups of inlet ports 1213 are staggered in the circumferential direction. That is to say, different groups of inlet ports 1213 are not arranged in the same radial direction.

[0043] The process chamber of this application achieves vertical air intake by setting the air intake assembly 12 on the top of the chamber body 10. By setting the flow equalization cavity and the uniformly distributed air intake ports 1213, the process gas can be stabilized in the flow equalization cavity, thereby uniformly diffusing into the interior of the chamber body 10, making the radial airflow field in the reaction area more stable and the process gas distribution more uniform, thereby improving the consistency of wafer 100 quality.

[0044] In some embodiments, the process chamber provided in this application further includes an exhaust pipe, which has an exhaust hole communicating with the interior of the chamber body 10, and the process gas in the chamber body 10 can be discharged from the chamber body 10 through the exhaust hole.

[0045] In some embodiments, the axis of the exhaust pipe may coincide with the first axis A1.

[0046] Further, in some embodiments, the first end of the exhaust pipe extends to the position of the first turntable 20, the second end of the exhaust pipe is located outside the chamber body 10, and there are multiple exhaust holes, which are distributed circumferentially at intervals on the outer peripheral wall of the exhaust pipe near its first end. By providing multiple exhaust holes on the outer peripheral wall of the exhaust pipe, the process gas in the chamber body 10 can be discharged evenly, thereby further improving the uniformity of the distribution of process gas in the chamber body 10.

[0047] In an embodiment where the intake assembly 12 includes an intake flange 121 and an orifice plate 122, a first mounting hole 1221 for installing an exhaust pipe is provided at the center of the orifice plate 122. Multiple intake holes 1222 are evenly distributed around the first mounting hole 1221, and the first mounting hole 1221 communicates with the interior of the chamber body 10. The intake flange 121 has a second mounting hole 1211 at its center, extending from a first side to a second side, for installing an exhaust pipe. As shown in Figure 6, the first mounting hole 1221 communicates with the second mounting hole 1211, and the exhaust pipe passes through both the first and second mounting holes 1221. The first exhaust pipe 40 is sealed to the inner wall of the second mounting hole 1211 by multiple sealing rings 14.

[0048] During the compound epitaxial reaction, the byproducts contain a large number of particles, which can easily form defects on the surface of wafer 100, leading to a decrease in yield. Therefore, in order to reduce the impact on the quality of wafer 100, a particle collection structure 70 is provided inside the exhaust pipe, and the particle collection structure 70 is located between the exhaust port and the second end of the exhaust pipe.

[0049] Further, the particle collection structure 70 is annular and is connected to the inner peripheral wall of the exhaust pipe. The particle collection structure 70 and the inner peripheral wall of the exhaust pipe form a collection groove for collecting particles.

[0050] The structure of the process chamber exhaust pipe of this application will be specifically described below with reference to specific embodiments: As shown in FIG3, the exhaust pipe includes: a first exhaust pipe 40. The first exhaust pipe 40 passes through the top of the chamber body 10, and the first end of the first exhaust pipe 40 extends to the top of the first turntable 20. The first exhaust pipe 40 is used to discharge the process gas above the first turntable 20. In other words, the first exhaust pipe 40 passes through the air intake assembly 12 from top to bottom and is sealed to the air intake assembly 12; the first exhaust pipe 40 has a first exhaust channel 41 communicating with the outside inside, and the first exhaust pipe 40 has a plurality of first exhaust holes 42 communicating with the first exhaust channel 41 on its outer peripheral wall near its first end (the first end is near the first turntable 20), so that the process gas enters the first exhaust channel 41 from the chamber body 10 and is discharged. By setting a first exhaust pipe 40 and setting multiple first exhaust holes 42 on its outer peripheral wall near the first end, the process gas above the first turntable 20 can be discharged evenly, thereby ensuring the uniformity of the process gas above the first turntable 20 and improving the consistency of the wafer in the process.

[0051] As shown in Figure 3, a particle collection structure 70 is provided on the inner wall of the first exhaust channel 41. The particle collection structure 70 is an annular particle collection ring. The outer peripheral wall of the particle collection ring is connected to the inner peripheral wall of the first exhaust channel 41. The first end of the particle collection ring is located near the first exhaust hole 42, and the second end of the particle collection ring is located away from the first exhaust hole 42. The portion of the particle collection ring adjacent to its second end is a variable diameter section. The outer annular diameter of the variable diameter section decreases along the direction near the second end, that is, the outer annular surface of the variable diameter section is a conical annular surface. A first collection groove 71 is formed between the outer annular surface of the variable diameter section of the particle collection ring and the inner wall of the first exhaust channel 41. After the airflow passes through the variable diameter section, a vortex is formed at the variable diameter section and the inner wall of the first exhaust channel 41. The vortex entrains the particles into the first collection groove 71 and collects the particles. Particles near the center of the particle collection ring are discharged towards the outlet end of the first exhaust channel 41 under the influence of the upward airflow, and are thus discharged with the process gas.

[0052] As shown in Figure 3, the exhaust pipe further includes a second exhaust pipe 80. The second exhaust pipe 80 passes through the bottom of the chamber body 10. The first end of the second exhaust pipe 80 is driven to connect to the first turntable 20, and the second end of the second exhaust pipe 80 is used to connect to a drive source. The second exhaust pipe 80 is used to discharge the process gas below the first turntable 20 and drive the first turntable 20 to rotate around the first axis A1. That is, the second exhaust pipe 80 passes through the chamber base 13, the first end of the second exhaust pipe 80 is driven to connect to the first turntable 20, and the second end of the second exhaust pipe 80 is used to connect to an external drive source to drive the first turntable 20 to rotate around the first axis A1.

[0053] As shown in Figures 7 and 8, a limiting plate 80a is provided at the first end of the second exhaust pipe 80, and a limiting groove 80b matching the limiting plate 80a is provided at the bottom of the first turntable 20. The limiting plate 80a is located within the limiting groove 80b, thereby achieving a limiting fit in the circumferential direction of the first turntable 20. In this embodiment, the axis of the second exhaust pipe 80 coincides with the first axis A1, and the second exhaust pipe 80 drives the first turntable 20 to rotate around the first axis A1 through the limiting fit of the limiting plate 80a and the limiting groove 80b.

[0054] For example, the limiting plate 80a is rectangular. However, this is not limiting; it can also be a triangle, a pentagon, or other polygon, or a star, gear, or other irregular shape, as long as the structure can achieve circumferential limiting fit, it is within the protection scope of this application.

[0055] As shown in Figures 3 and 8, the second exhaust pipe 80 has a second exhaust channel 81 communicating with the outside. Multiple second exhaust holes 82 communicating with the second exhaust channel 81 are provided on the outer peripheral wall of the second exhaust pipe 80 near its first end, allowing the process gas below the first turntable 20 to enter the second exhaust channel 81 through the second exhaust holes 82 and be discharged. By driving the second exhaust pipe 80 to the first turntable 20, the first turntable 20 can be driven to rotate through the second exhaust pipe 80. In other words, the second exhaust pipe 80 not only has an exhaust function but also a driving function, making it a typical example of a multi-purpose device.

[0056] It is understood that, as shown in Figure 3, an upper cavity 16 is formed between the first turntable 20 and the air intake assembly 12, while a lower cavity 17 is formed between the first turntable 20 and the chamber base 13. It should be noted that the upper cavity 16 and the lower cavity 17 are not isolated. There is a gap between the outer peripheral wall of the first turntable 20 and the side wall 11 of the chamber, and the upper cavity 16 and the lower cavity 17 can be connected through the gap between the first turntable 20 and the side wall 11 of the chamber. The second exhaust port 82 of the second exhaust pipe 80 is connected to the lower cavity 17. During the process, after the process gas blown out by the air intake assembly 12 reacts with the wafer 100, a portion of the gas near the center of the first turntable 20 is discharged from the first exhaust channel 41 in the first exhaust pipe 40; a portion of the gas near the outer side of the first turntable 20 flows into the lower cavity 17 through the gap between the first turntable 20 and the side wall 11 of the chamber, and then is discharged from the second exhaust channel 81 of the second exhaust pipe 80.

[0057] By adopting a combination of central venting and edge venting, the process gases after the reaction can be dispersed and discharged, reducing the risk of particulate matter accumulation on wafer 100 and improving the quality of wafer 100.

[0058] It is understood that a particle collection structure 70 is also provided in the second exhaust pipe 80. The particle collection structure 70 is an annular particle collection ring. The outer peripheral wall of the particle collection ring is connected to the inner peripheral wall of the second exhaust channel 81. The first end of the particle collection ring is located near the second exhaust port 82, and the second end of the particle collection ring is located away from the second exhaust port 82. The particle collection ring has a variable diameter section adjacent to its first end. A second collection groove 72 is formed between the outer annular surface of the variable diameter section of the particle collection ring and the inner wall of the second exhaust channel 81. After the airflow passes through the variable diameter section, a vortex is formed at the variable diameter section and the inner wall of the second exhaust channel 81. The vortex draws the particles into the second collection groove 72 and collects the particles. Particles near the center of the particle collection ring are discharged towards the outlet end of the second exhaust channel 81 under the action of the downward airflow, and are thus discharged with the process gas.

[0059] For example, as shown in FIG3, a connecting hole 23 is provided on the first turntable 20, extending from the top to the bottom of the first turntable 20; the first end of the first exhaust pipe 40 is sealed to the top of the first turntable 20, and the first exhaust channel 41 is connected to the connecting hole 23; the first end of the second exhaust pipe 80 is sealed to the bottom of the first turntable 20, and the second exhaust channel 81 is connected to the connecting hole 23, thereby enabling the second exhaust channel 81 to connect with the first exhaust channel 41. By connecting the second exhaust channel 81 with the first exhaust channel 41, exhaust efficiency can be improved.

[0060] It should be noted that in this embodiment, the exhaust pipe includes a first exhaust pipe 40 and a second exhaust pipe 80. However, this is not limiting. In some other embodiments not shown in the figures, the exhaust pipe may include only the first exhaust pipe 40 or the second exhaust pipe 80. That is to say, without departing from the application concept and technical principles of this application, the above situation also falls within the protection scope of this application.

[0061] As shown in Figures 9 to 11, the process chamber further includes a dust collection ring 90, which is sleeved on the outer peripheral wall of the first turntable 20. The first turntable 20 and the dust collection ring 90 divide the interior of the chamber body 10 into an upper chamber 16 and a lower chamber 17. The dust collection ring 90 has a dust collection space 90a that connects the upper chamber 16 and the lower chamber 17 to collect particles in the process gas flowing through the dust collection space 90a. By setting the dust collection ring 90 to collect particles in the chamber body 10, the dispersion of particles in the chamber body 10 can be reduced.

[0062] As shown in Figures 9 to 11, the top of the dust collection ring 90 is provided with an air inlet hole 911, and the dust collection space 90a is connected to the upper cavity 16 through the air inlet hole 911; the inner peripheral wall of the dust collection ring 90 is provided with an air outlet hole 931, and the dust collection space 90a is connected to the lower cavity 17 through the air outlet hole 931; the inner wall of the dust collection space 90a is provided with a dust collection groove 921, which is located below the air inlet hole 911, and the air outlet hole 931 is located between the dust collection groove 921 and the air inlet hole 911 in the vertical direction. In use, the process gas in the upper chamber 16 enters the dust collection space 90a through the air inlet 911, and then exits into the lower chamber 17 through the air outlet 931. During this process, the process gas changes from the vertical direction to the horizontal direction, and the particles in the process gas enter the dust collection groove 921 below the air inlet 911 under the action of gravity, thereby achieving dust collection.

[0063] As shown in Figures 9 to 11, there are multiple air inlet holes 911 and air outlet holes 931, which are distributed circumferentially around the first turntable 20. The sum of the flow areas of all air inlet holes 911 is less than the sum of the flow areas of all air outlet holes 931.

[0064] According to the relationship between flow velocity and cross-sectional area, flow velocity = flow rate / cross-sectional area, and cross-sectional area is also the flow area. Since the sum of the flow areas of all inlet holes 911 is less than the sum of the flow areas of all outlet holes 931, when the same volume of process gas passes through, the gas flow velocity through the inlet holes 911 is faster, while the gas flow velocity through the outlet holes 931 is slower. That is, the flow velocity of the process gas decreases after entering the dust collection space 90a. Therefore, the probability of particle deposition increases. Moreover, some of the process gas will form eddies after entering the dust collection space 90a, causing particles to gather in the dust collection tank 921 and reducing particle dispersion in the process chamber.

[0065] As shown in Figures 9 to 11, the dust collection ring 90 includes: an annular top plate 91, an annular bottom plate 92, an annular inner plate 93, and a first limiting part 94. The annular top plate 91 is arranged around the outer periphery of the first turntable 20. The annular bottom plate 92 is located below the annular top plate 91 and spaced apart from it. The annular inner plate 93 is arranged around the outer periphery of the first turntable 20 and connected to the annular top plate 91 and its inner periphery. The annular top plate 91, the annular bottom plate 92, and the annular inner plate 93 form a dust collection space 90a. The first limiting part 94 is connected to the inner side of the annular inner plate 93.

[0066] As shown in Figure 9, a second limiting part matching the first limiting part 94 is provided on the first turntable 20. The first limiting part 94 and the second limiting part are provided in a one-to-one correspondence. The first limiting part 94 and the corresponding second limiting part are in a circumferential upper limit cooperation with the first turntable 20, so that the dust collection ring 90 is relatively fixed with the first turntable 20 and rotates synchronously.

[0067] For example, the first limiting part 94 is a plurality of limiting arms, which are distributed circumferentially, as shown in FIG19. The second limiting part is a slot of the first turntable 20. The slot and the limiting arm are respectively set to correspond one-to-one. The limiting arm is located in the corresponding slot and is positioned and engaged in the circumferential direction of the first turntable 20, so that the dust collection ring 90 is relatively fixed and rotates synchronously with the first turntable 20.

[0068] As shown in Figures 9 to 11, the annular top plate 91 is provided with a plurality of air inlet holes 911 that communicate with the dust collection space 90a at intervals along the circumference. As shown in Figure 10, the annular inner plate 93 is provided with a plurality of air outlet holes 931 that communicate with the dust collection space 90a at intervals along the circumference. The air outlet holes 931 are located below the first turntable 20 so that the gas blown out from the air outlet holes 931 flows to the second exhaust hole 82.

[0069] As shown in Figure 10, the dust collection groove 921 is disposed on the annular base plate 92. The dust collection groove 921 is an annular groove disposed inside the annular base plate 92, and the dust collection groove 921 is connected to the dust collection space 90a. Since the sum of the flow areas of all the inlet holes 911 is less than the sum of the flow areas of all the outlet holes 931, the flow rate of the process gas decreases after entering the dust collection space 90a, the probability of particle deposition increases, and some of the process gas will form eddies after entering the dust collection space 90a, causing particles to accumulate in the dust collection groove 921, reducing the dispersion of particles in the process chamber.

[0070] As shown in Figures 3 and 12, the first exhaust pipe 40 is rotatably disposed on the top of the chamber body 10 and sealed together. The first end of the first exhaust pipe 40 is driven to be connected to the second turntable 30, and the second end of the first exhaust pipe 40 is used to be driven to be connected to the drive source to drive the second turntable 30 to rotate around the second axis A2.

[0071] As shown in Figure 6, the first exhaust pipe 40 is rotatably disposed within the first mounting hole 1221 and the second mounting hole 1211 of the intake assembly 12 and is sealed to allow the first exhaust pipe 40 to rotate relative to the intake assembly 12. The second end of the first exhaust pipe 40 is located outside the chamber body 10 and is driven by a drive source. For example, the drive source may be a servo motor.

[0072] In this embodiment, the outer peripheral wall of the first exhaust pipe 40 and the top of the chamber body 10 are sealed together, but relative rotation between the first exhaust pipe 40 and the top of the chamber body 10 is allowed. For example, as shown in FIG6, a plurality of sealing rings 14 are provided between the outer peripheral wall of the first exhaust pipe 40 and the inner peripheral wall of the first mounting hole 1221, and an annular partition 15 is provided between adjacent sealing rings 14. The mutual compression between the annular partition 15 and the sealing rings 14 achieves surface sealing while also allowing relative rotation. However, this is not limiting. In some other embodiments not shown in the figure, a vacuum dynamic seal can also be achieved between the first exhaust pipe 40 and the top of the chamber body 10 through fluid.

[0073] It should also be noted that in this embodiment, the first exhaust pipe 40 is rotatable relative to the chamber body 10. However, this is not limiting. In another embodiment (not shown), the first exhaust pipe 40 can also be fixedly connected relative to the chamber body 10, which can also drive the second turntable 30. This is because the axis of the first exhaust pipe 40 coincides with the first axis A1. When the first turntable 20 drives the second turntable 30 to rotate, all the second turntables 30 revolve around the first exhaust pipe 40. That is, the first exhaust pipe 40 rotates relative to the second turntable 30, so it can also drive the second turntable 30 to rotate. However, in this other embodiment, the rotation speed of the second turntable 30 is related to the rotation speed of the first turntable 20. After the process starts, the rotation speed of the second turntable 30 can only be indirectly adjusted by adjusting the rotation speed of the first turntable 20. In the embodiment shown in Figure 12, after the speed of the first turntable 20 is constant, the rotational speed of the second turntable 30 can be adjusted by changing the rotational speed of the first exhaust pipe 40, thereby decoupling the rotational speed of the first turntable 20 from the rotational speed of the second turntable 30, making the rotational speed control of the second turntable 30 more flexible and precise.

[0074] By driving the first exhaust pipe 40 in conjunction with the second turntable 30, the process gas after the reaction can not only be discharged through the first exhaust port 42 into the first exhaust channel 41, but the second turntable 30 can also be driven to rotate by the first exhaust pipe 40. In other words, the first exhaust pipe 40 not only has a driving function, but also an exhaust function, which is a typical example of a multi-purpose device.

[0075] It is understood that, as shown in Figure 13, the second turntable 30 is disposed on top of the first turntable 20, the second turntable 30 is rotatably connected to the first turntable 20, the second turntable 30 is rotatable relative to the first turntable 20 around the second axis A2, the second axis A2 is parallel to the first axis A1; the first exhaust pipe 40 is drivenly connected to the second turntable 30, and the first exhaust pipe 40 is used to drive the second turntable 30 to rotate around the second axis A2.

[0076] In use, as the first turntable 20 rotates around the first axis A1, it drives the second turntable 30 to rotate around the first axis A1 as well. Simultaneously, driven by the first exhaust pipe 40, the second turntable 30 also rotates around the second axis A2. Since the second turntable 30 is driven to rotate by the first exhaust pipe 40, it is a mechanical transmission, not an air-bearing rotation. Therefore, the rotational speed of the second turntable 30 can be controlled by adjusting the rotational speed of the first exhaust pipe 40. As long as the stability of the rotation of the first exhaust pipe 40 is ensured, the rotational stability of the second turntable 30 can be controlled. Furthermore, the number of rotations and angle of the second turntable 30 can be determined based on the number of rotations and angle of the first exhaust pipe 40, thereby achieving controllability of the rotational speed and number of rotations, improving the stability of the second turntable 30's rotation, and thus improving the consistency of wafer 100 quality.

[0077] The process chamber of this application is provided with a first exhaust pipe 40 and driven to the second turntable 30 through the first exhaust pipe 40, which replaces the air flotation method with mechanical transmission. This allows the second turntable 30 to rotate while maintaining controllability and stability, thereby improving the consistency of wafer 100 quality.

[0078] It is understood that in this embodiment, the first axis A1 is the central axis of the first turntable 20, and the rotation of the first turntable 20 around the first axis A1 is equivalent to its own rotation around its own central axis. The second axis A2 is the central axis of the second turntable 30, and the rotation of the second turntable 30 around the second axis A2 is equivalent to its own rotation around its own central axis. That is, the first turntable 20 drives the second turntable 30 to revolve around the first axis A1 through its own rotation, and while the second turntable revolves around the first axis A1, it also rotates around its own axis, which is the second axis A2. However, this is not limiting. In some other embodiments not shown in the figure, the first axis A1 may not be the central axis of the first turntable 20. For example, the first axis A1 may be parallel to the central axis of the first turntable 20 but offset by a certain distance. Similarly, the second axis A2 may not be the central axis of the second turntable 30. For example, the second axis A2 may be parallel to the central axis of the second turntable 30 but offset by a certain distance.

[0079] It should also be noted that, in this embodiment, as shown in FIG12, there are multiple second turntables 30, which are arranged around the first exhaust pipe 40. All second turntables 30 are drivenly connected to the first exhaust pipe 40, so that the first exhaust pipe 40 drives all second turntables 30 to rotate synchronously around their respective second axes A2. By setting multiple second turntables 30, epitaxial layer growth of multiple wafers 100 can be realized. And since all second turntables 30 are drivenly connected to the first exhaust pipe 40, the first exhaust pipe 40 can drive all second turntables 30 to rotate synchronously, thereby ensuring the consistency of wafer 100 quality.

[0080] As shown in Figure 12, the first exhaust pipe 40 is provided with a first driving member 40a, and the second turntable 30 is provided with a second driving member 30a that matches the first driving member 40a. The first driving member 40a and the second driving member 30a drive each other to make the first exhaust pipe 40 drive the second turntable 30 to rotate around the second turntable 30.

[0081] For example, the first driving member 40a is a first gear disposed on the outer peripheral wall of the first exhaust pipe 40, and the second driving member 30a is a second gear disposed at the bottom of the first turntable 20, and the first gear meshes with the second gear.

[0082] Specifically, as shown in Figure 12, the first driving component 40a is a first gear, which is sleeved on the outer peripheral wall of the first exhaust pipe 40. The second driving component 30a is a second gear, which meshes with the first gear. As shown in Figure 13, the second gear has a first end and a second end along the second axis A2. The first end of the second gear is fixedly connected to the second turntable 30, and the second end of the second gear is rotatably connected to the first turntable 20. When the first exhaust pipe 40 rotates, the first gear drives the second gear to rotate, and the rotating second gear drives the second turntable 30 to rotate around the second axis A2.

[0083] For example, as shown in FIG14, the first end of the second gear is provided with a quadrangular prism, and the second end of the second gear is a cylinder. As shown in FIG15, the bottom of the second turntable 30 is provided with a rectangular groove 31 that matches the quadrangular prism. The quadrangular prism is located in the rectangular groove 31 and is engaged with the upper limit of the circumference of the second turntable 30, so that the second gear drives the second turntable 30 to rotate around the second axis A2. As shown in FIG13, the first turntable 20 is provided with a circular groove 21 that matches the cylinder. The cylinder is located in the circular groove 21 and is engaged with the upper limit of the circumference of the first turntable 20, so that the first turntable 20 drives the gear to revolve around the first axis A1.

[0084] It is understood that when there are multiple second turntables 30, the second gear of each second turntable 30 meshes with the first gear, thereby achieving synchronous rotation.

[0085] The process chamber of this application adopts a gear transmission mechanism to adjust the transmission ratio between the first exhaust pipe 40 and the second turntable 30 by setting the number of teeth and radius of the first gear and the second gear, thereby achieving precise control over the rotation speed and rotation angle of the second turntable 30.

[0086] As shown in Figure 3, a wafer transfer port 111 for communicating with the outside is provided on the side wall 11 of the chamber. The second turntable 30 has a wafer transfer position close to the wafer transfer port 111. The first turntable 20 drives the second turntable 30 to move between the wafer transfer position and the non-wafer transfer position by rotating, thereby facilitating the reception and delivery of the wafer 100.

[0087] Before the process begins, the first turntable 20 rotates multiple second turntables 30 in turn to the wafer transfer position to receive the wafer 100 entering the cavity body 10 from the wafer transfer port 111; after the process is completed, the first turntable 20 rotates multiple second turntables 30 in turn to the wafer transfer position so that the wafer 100 can be sent out from the wafer transfer port 111.

[0088] As shown in Figures 3 and 16, the process chamber also includes a lifting mechanism 50. The lifting mechanism 50 is located below the first turntable 20 and near the wafer transfer port 111 of the chamber body 10. The lifting mechanism 50 is used to lift the wafer 100 on the second turntable 30 located at the wafer transfer position, or to lower the wafer 100 and place it on the second turntable 30 located at the wafer transfer position.

[0089] Since the process chamber of this application uses mechanical transmission to rotate the second turntable 30, there is no need to consider the interaction between airflow and the second turntable 30. Therefore, the wafer 100 can be lifted and lowered by setting up a lifting device, thereby facilitating the placement and removal of the wafer 100.

[0090] As shown in Figures 3 and 16, the lifting mechanism 50 includes a bracket 51 and lifting rods 52. The bracket 51 is disposed below the first turntable 20, and the lifting rods 52 are disposed on the bracket 51. There are at least three lifting rods 52, which are spaced apart around the second axis A2. Exemplarily, in this embodiment, there are three lifting rods 52.

[0091] As shown in Figures 7 and 16, the first turntable 20 is provided with a plurality of first clearance holes 22. As shown in Figure 15, the second turntable 30 is provided with a plurality of second clearance holes 32. At the transmission plate position of the second turntable 30, each lifting rod 52 corresponds to one first clearance hole 22 and one second clearance hole 32.

[0092] The lifting rod 52 has an extended state and a retracted state, as shown in Figure 17. When the lifting rod 52 is in the extended state, the lifting rod 52 passes through the first clearance hole 22 and the second clearance hole 32 to lift the wafer 100. As shown in Figure 3, when the lifting rod 52 is in the retracted state, the lifting rod 52 is located below the first turntable 20 and avoids the first turntable 20.

[0093] As shown in Figure 18, the process chamber further includes a protective plate 60 and a connector (not shown in the figure). The protective plate 60 is disposed above the first turntable 20, and a receiving space is formed between the bottom of the protective plate 60 and the top of the first turntable 20. The first driving member 40a and the second driving member 30a are located within the receiving space. The connector is connected between the protective plate 60 and the first turntable 20 so that the protective plate 60 and the first turntable 20 rotate synchronously. By disposing of the protective plate 60 above the first turntable 20 and placing the first driving member 40a and the second driving member 30a within the receiving space between the first turntable 20 and the protective plate 60, particles generated by the mutual friction between the first driving member 40a and the second driving member 30a can be effectively blocked, preventing particles from escaping to the surface of the wafer 100 and improving the quality of the wafer 100.

[0094] As shown in Figure 18, the guard plate 60 is provided with a third clearance hole 61 and a fourth clearance hole 62. The second turntable 30 is located in the third clearance hole 61 and is in clearance fit with the third clearance hole 61. The first exhaust pipe 40 passes through the fourth clearance hole 62 and is in clearance fit with the fourth clearance hole 62. By setting the third clearance hole 61 and the fourth clearance hole 62, interference between the first exhaust pipe 40, the second turntable 30 and the guard plate 60 can be avoided. At the same time, due to the clearance fit between the second turntable 30 and the third clearance hole 61, the movement of the second turntable 30 can be guaranteed, and friction-induced particles can be avoided. Similarly, due to the clearance fit between the first exhaust pipe 40 and the fourth clearance hole 62, friction-induced particles can also be avoided. Moreover, since the gaps between the inner walls of the second turntable 30 and the third clearance hole 61 and between the inner walls of the first exhaust pipe 40 and the fourth clearance hole 62 are small, particles generated by the friction between the first driving component 40a and the second driving component 30a can be effectively prevented from escaping to the surface of the wafer 100, thereby improving the quality of the wafer 100.

[0095] As shown in Figures 18 and 19, the guard plate 60 includes an inner sub-plate 63 and an outer sub-plate 64. The inner sub-plate 63 is connected to the first turntable 20 and is located between the second turntable 30 and the first exhaust pipe 40. The inner sub-plate 63 is provided with a fourth clearance hole 62 and a first clearance groove 631. The outer sub-plate 64 is detachably connected to the first turntable 20 and is located on the side of the second turntable 30 away from the first exhaust pipe 40. The outer sub-plate 64 is provided with a second clearance groove 641, and the first clearance groove 631 and the second clearance groove 641 form a third clearance hole 61. The use of a separable guard plate 60 facilitates the installation and removal of the guard plate 60. Furthermore, since the outer sub-plate 64 wears out relatively quickly, it can be replaced separately when it reaches a certain wear level, eliminating the need to remove the inner sub-plate 63 and reducing maintenance costs.

[0096] For example, the inner sub-plate 63 is connected to the first turntable 20 via a portion of a plurality of connecting members, and the outer sub-plate 64 is connected to the first turntable 20 via another portion of a plurality of connecting members. These connecting members are positioning pins. Multiple positioning pins are provided at the bottom of both the inner sub-plate 63 and the outer sub-plate 64. The top of the first turntable 20 is provided with pin holes corresponding to the positioning pins, and these pin holes are blind holes. In use, after the inner sub-plate 63 and the outer sub-plate 64 are placed on the first turntable 20, the positioning pins are located in their respective pin holes, achieving a circumferential limiting fit on the first turntable 20, thereby allowing the first turntable 20 to drive the inner sub-plate 63 and the outer sub-plate 64 to rotate. Simultaneously, since the pin holes are blind holes, they can support the positioning pins, creating accommodating spaces between the inner sub-plate 63 and the first turntable 20, and between the outer sub-plate 64 and the first turntable 20.

[0097] It is understood that, in order to ensure the stability of the process gas flow, the top surfaces of the inner sub-plate 63 and the outer sub-plate 64 are at the same horizontal height.

[0098] According to another aspect of this application, a semiconductor process apparatus is also disclosed, including a heating device and the above-described process chamber.

[0099] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of this application, and this application is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of this application, and these modifications and improvements are also considered to be within the scope of protection of this application. [Simplified Explanation of the Diagram]

[0027] Figure 1 is a structural schematic diagram of the large and small disks in the related art; Figure 2 is a schematic diagram of the cooperation between the large and small disks in the related art; Figure 3 is a structural schematic diagram of the process chamber in an embodiment of this application; Figure 4 is a structural schematic diagram of the perforated plate of the process chamber in an embodiment of this application; Figure 5 is a cross-sectional view of the air inlet flange of the process chamber in an embodiment of this application; Figure 6 is a schematic diagram of the sealing cooperation between the first exhaust pipe and the air inlet assembly of the process chamber in an embodiment of this application; Figure 7 is an assembly diagram of the first turntable and the second exhaust pipe of the process chamber in an embodiment of this application; Figure 8 is a structural schematic diagram of the second exhaust pipe of the process chamber in an embodiment of this application; Figure 9 is a structural schematic diagram of the dust collection ring of the process chamber in an embodiment of this application; Figure 10 is a structural schematic diagram of the process chamber and the first turntable in an embodiment of this application; Figure 11 is a side cross-sectional view of the interior of the dust collection ring of the process chamber in an embodiment of this application; Figure 12 is a schematic diagram of the cooperation between the first and second drive components of the process chamber in an embodiment of this application; Figure 13 is a schematic diagram of the assembly of the second drive component of the process chamber in an embodiment of this application. Figure 14 is a schematic diagram of the structure of the second drive component of the process chamber according to an embodiment of this application; Figure 15 is a schematic diagram of the structure of the second turntable of the process chamber according to an embodiment of this application; Figure 16 is a schematic diagram of the structure of the lifting mechanism of the process chamber according to an embodiment of this application; Figure 17 is a schematic diagram of the extended state of the lifting mechanism of the process chamber according to an embodiment of this application; Figure 18 is a schematic diagram of the structure of the protective plate of the process chamber according to an embodiment of this application; Figure 19 is a schematic diagram of the structure of the inner subplate of the process chamber according to an embodiment of this application.

Claims

1. A process chamber, comprising: The chamber body has an air inlet at the top for supplying process gases into the chamber body. A first turntable is rotatably disposed within the chamber body about a first axis and located below the air inlet, the axis of which is parallel to the first axis; a second turntable is used to hold the wafer and is rotatably disposed on the first turntable about a second axis; a first exhaust pipe passes through the top of the chamber body, the first end of which extends to the top of the first turntable and the second end of which is located outside the chamber body, the first exhaust pipe is used to exhaust the process gas above the first turntable, and the first axis passes through the first exhaust pipe.

2. The process chamber according to claim 1, wherein, The air intake is in multiple groups, with multiple air intakes in the same group and spaced apart around the first axis. The air intakes in different groups are spaced apart radially on the first turntable, and the air intakes in adjacent groups are staggered in the circumferential direction.

3. The process chamber according to claim 1, wherein, The first exhaust pipe has an exhaust port that communicates with the interior of the chamber body; there are multiple exhaust ports, which are distributed circumferentially at intervals on the outer peripheral wall of the first exhaust pipe near the first end extending to the first turntable.

4. The process chamber according to claim 3, wherein, The first exhaust pipe is equipped with a particle collection structure located between the exhaust holes and the second end of the first exhaust pipe.

5. The process chamber according to claim 4, wherein, The particle collection structure is annular and is connected to the inner peripheral wall of the first exhaust pipe. The particle collection structure and the inner peripheral wall of the first exhaust pipe form a collection groove for collecting particles.

6. The process chamber according to claim 5, wherein, The process chamber also includes: a second exhaust pipe, which passes through the bottom of the chamber body. The first end of the second exhaust pipe is connected to the first turntable drive, and the second end of the second exhaust pipe is used to connect to the drive source. The second exhaust pipe is used to discharge the process gas below the first turntable and drive the first turntable to rotate around the first axis.

7. The process chamber according to claim 6, wherein, The first turntable is provided with a connecting hole that extends from the top to the bottom of the first turntable; the first end of the first exhaust pipe is sealed to the top of the first turntable, and the interior of the first exhaust pipe is connected to the connecting hole; the first end of the second exhaust pipe is sealed to the bottom of the first turntable, and the interior of the second exhaust pipe is connected to the connecting hole.

8. The process chamber according to any one of claims 1-7, wherein, The process chamber also includes a dust collection ring, which is sleeved on the outer peripheral wall of the first turntable. The first turntable and the dust collection ring divide the interior of the chamber body into an upper chamber and a lower chamber. The dust collection ring has a dust collection space inside that connects the upper chamber and the lower chamber to collect particles in the process gas flowing through the dust collection space.

9. The process chamber according to claim 8, wherein, The dust collection ring has an air inlet hole at its top, through which the dust collection space communicates with the upper cavity; the dust collection ring has an air outlet hole on its inner peripheral wall, through which the dust collection space communicates with the lower cavity; the dust collection space has a dust collection groove on its inner wall, which is located below the air inlet hole, and the air outlet hole is located between the dust collection groove and the air inlet hole in the vertical direction.

10. The process chamber according to claim 9, wherein, There are multiple air inlet holes and air outlet holes, which are distributed circumferentially around the first turntable. The sum of the flow areas of all the air inlet holes is less than the sum of the flow areas of all the air outlet holes.

11. The process chamber according to claim 1, wherein, The first exhaust pipe is rotatably disposed on the top of the chamber body and sealed in place. The first end of the first exhaust pipe is driven to the second turntable, and the second end of the first exhaust pipe is driven to the drive source to drive the second turntable to rotate around the second axis.

12. The process chamber according to claim 11, wherein, There are multiple second turntables arranged around the first exhaust pipe. All the second turntables are driven to the first exhaust pipe so that the first exhaust pipe drives all the second turntables to rotate synchronously around their respective second axes, wherein the second axes are parallel to the first axis.

13. The process chamber according to claim 11, wherein, The first exhaust pipe is provided with a first driving member, and the second turntable is provided with a second driving member that matches the first driving member. The first driving member and the second driving member drive each other to drive each other so that the first exhaust pipe drives the second turntable to rotate around the second turntable.

14. The process chamber according to claim 13, wherein, The first driving component is a first gear disposed on the outer peripheral wall of the first exhaust pipe, and the second driving component is a second gear disposed at the bottom of the first turntable, wherein the first gear meshes with the second gear.

15. The process chamber according to claim 13, wherein, The process chamber also includes: a guard plate disposed above the first turntable and rotating synchronously with the first turntable, with a receiving space formed between the bottom of the guard plate and the top of the first turntable, and the first drive member and the second drive member located within the receiving space.

16. The process chamber according to claim 15, wherein, The guard plate is provided with a third clearance hole and a fourth clearance hole. The second turntable is located in the third clearance hole and is clearance-fitted with the third clearance hole. The first exhaust pipe passes through the fourth clearance hole and is clearance-fitted with the fourth clearance hole.

17. The process chamber according to claim 16, wherein, The guard plate includes: an inner sub-plate, connected to the first turntable and located between the second turntable and the first exhaust pipe, the inner sub-plate being provided with the fourth clearance hole and the first clearance groove; and an outer sub-plate, detachably connected to the first turntable, the outer sub-plate being located on the side of the second turntable away from the first exhaust pipe, the outer sub-plate being provided with the second clearance groove, the first clearance groove and the second clearance groove forming the third clearance hole.

18. The process chamber according to any one of claims 1-7, wherein, The process chamber further includes: a lifting mechanism disposed below the first turntable, the lifting mechanism having multiple lifting rods, all of which extend to support the wafer; the first turntable having multiple first clearance holes, each corresponding to one of the lifting rods; and the second turntable having multiple second clearance holes, the second turntable rotating relative to the first turntable to align the first clearance holes with the second clearance holes, so that the extended lifting rods pass through the first clearance holes and the second clearance holes and support the wafer.

19. A semiconductor manufacturing apparatus, comprising a heating device and a process chamber according to any one of claims 1 to 18.

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