In-situ film growth rate monitoring apparatus, systems, and methods for substrate processing

Abstract

The embodiments disclosed herein generally relate to apparatus, systems, and methods for monitoring in-situ film growth rates. The film thickness on a substrate is monitored during a substrate processing operation, which deposits a film on the substrate. The thickness is monitored during the substrate processing operation. Monitoring includes guiding light in a direction perpendicular to the heating direction towards a crystalline sample. In one embodiment, a reflectometer system for monitoring film growth during a substrate processing operation includes a first block including a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposite the first block.

Description

Technical Field

[0001] The embodiments of this disclosure are generally related to devices, systems, and methods for monitoring in-situ membrane growth rates. Prior Technology

[0002] Film thickness measurement of the processed substrate can be used in relation to the processing operation. After the processing operation, film thickness measurement can be performed outside the processing chamber where the processed substrate is located. This measurement decision may involve inefficiency and reduced processing volume because non-compliant substrates may not be used, and obtaining compliant measurements may require several processing iterations.

[0003] Furthermore, film thickness measurements are difficult to perform within the processing chamber and during processing operations because the processing equipment within the chamber can interfere with the measuring equipment, thereby hindering measurement accuracy. For example, heat emitted from a hot lamp can interfere with the measuring equipment. As another example, viewing windows within the processing chamber (such as coatings on a dome) can interfere with the measuring equipment.

[0004] Therefore, there is a need for improved equipment, systems, and methods to facilitate in-situ and real-time measurement operations, accurate measurement, increased efficiency and throughput, reduced machine downtime, and lower costs. Summary of the Invention

[0005] The embodiments disclosed herein generally relate to apparatus, systems, and methods for monitoring in-situ film growth rates. The film thickness on a substrate is monitored during a substrate processing operation, in which a film is deposited on the substrate. The thickness is monitored during the substrate processing operation. Monitoring includes guiding light in a direction perpendicular to the heating direction, toward the crystalline sample.

[0006] In one embodiment, a reflectometer system for monitoring film growth during substrate processing operations includes a first block comprising a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposite the first block. The second block includes a second inner surface facing the first inner surface. The reflectometer system includes a first connector bar and a second connector bar separating the first block and the second block.

[0007] In one embodiment, a system for processing a substrate includes a processing chamber comprising a processing volume, a base disposed within the processing volume, and a plurality of lamps. The plurality of lamps are configured to generate heat toward the base along the Z-axis. The system includes a preheating ring supported on a sidewall of the processing chamber and a reflectometer system. The reflectometer system includes a first block disposed within the processing volume. The first block includes a first inner surface. The reflectometer system includes a light emitter disposed within the first block and oriented toward the first inner surface, and a light source coupled to the light emitter. The reflectometer system includes a light receiver disposed within the first block and oriented toward the first inner surface, and a sensor coupled to the light receiver. The reflectometer system includes a second block disposed within a processing gas and opposite the first block in an XY plane perpendicular to the Z-axis. The second block includes a second inner surface facing the first inner surface.

[0008] In one embodiment, a non-transitory computer-readable medium includes instructions that, when executed, cause substrate processing operations to be performed on a substrate supported on a pedestal disposed within a processing volume of a processing chamber. The substrate processing operations include influencing one or more processing gases into the processing volume and heating the substrate. When executed, the instructions cause light from a light emitter disposed in a first block to be directed toward a crystallized sample during the substrate processing operations. When executed, the instructions cause reflected light reflected from the crystallized sample to be collected, and the reflected light is used to determine the growth rate of the crystallized sample. Simple Explanation of the Diagram

[0009] To gain a more detailed understanding of the features and methods described above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be obtained with reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only exemplary embodiments and are not intended to limit the scope of the disclosure, as other equivalent embodiments are permissible.

[0010] Figure 1A is a cross-sectional schematic diagram of a system for processing a substrate according to one embodiment.

[0011] Figure 1B is a schematic cross-sectional view of the system shown in Figure 1A according to one embodiment, along a section perpendicular to the section shown in Figure 1A.

[0012] Figure 2 is a partial schematic top view of the system shown in Figures 1A and 1B according to one embodiment.

[0013] Figure 3A is a front isometric view of the first block, the second block, the first rod connector, and the second rod connector shown in Figure 2 according to one embodiment.

[0014] Figure 3B is a rear isometric view of the first block, the second block, the first rod connector, and the second rod connector shown in Figure 3A according to one embodiment.

[0015] Figure 3C is a front isometric view of the first block shown in Figure 3A according to one embodiment.

[0016] The 3D figure is a front isometric view of the second block shown in Figure 3B according to one embodiment.

[0017] Figure 4 is a partial schematic top view of the system shown in Figures 1A and 1B according to one embodiment.

[0018] Figure 5 is a schematic block diagram of a method for film growth during monitoring substrate processing operations according to one embodiment.

[0019] Figure 6 is a schematic plan view of an optical module according to one embodiment.

[0020] For ease of understanding, the same element symbols have been used as much as possible to identify common elements in the figures. It is anticipated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Implementation

[0021] The embodiments disclosed herein generally relate to apparatus, systems, and methods for monitoring in-situ film growth rates. The film thickness on a substrate is monitored during a substrate processing operation, in which a film is deposited on the substrate. The thickness is monitored during the substrate processing operation. Monitoring includes guiding light in a direction perpendicular to the heating direction, toward the crystalline sample.

[0022] This disclosure anticipates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, welding, interference fit, and / or fastening, such as by using bolts, threaded connections, pins, and / or screws. This disclosure anticipates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, integral formation. This disclosure anticipates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, direct coupling and / or indirect coupling. This disclosure anticipates that terms such as "couples," "coupling," "couple," and "coupled" may include operative coupling, such as electrical coupling and / or fluid coupling.

[0023] Figure 1A is a schematic cross-sectional view of a system 101 for processing a substrate according to one embodiment. System 101 includes a processing chamber 100. The processing chamber 100 is an epitaxial deposition chamber and can be used as part of a clustering tool. The processing chamber 100 is used to grow an epitaxial film on a substrate (such as substrate 150). During processing, the processing chamber 100 generates cross-flow of precursors (e.g., process gases) across the entire top surface of substrate 150. System 101 uses the processing chamber 100 configured to perform epitaxial deposition operations on substrate 150. The features and benefits of this disclosure can be used in other substrate processing operations, such as in chemical vapor deposition (CVD) chambers, atomic layer deposition (ALD) chambers, physical vapor deposition (PVD) chambers, etching chambers, ion implantation chambers, oxidation chambers, and / or other processing chambers.

[0024] The processing chamber 100 includes an upper lamp module 102, a lower lamp module 104, a chamber main body assembly 106, a base assembly 124, a lower viewing window 120, and an upper viewing window 122. The base assembly 124 is disposed between the base assembly 124 and the lower lamp module 104. The lower viewing window 120 is disposed between the base assembly 124 and the lower lamp module 104. The upper viewing window 122 is disposed between the base assembly 124 and the upper lamp module 102.

[0025] An upper lamp module 102 is positioned above a base assembly 124 and configured to heat a substrate, such as substrate 150, mounted on the base assembly 124. The upper lamp module 102 includes an upper module body 126 and a plurality of lamp holes 128 disposed through the upper module body 126. Each of the plurality of lamp holes 128 includes an upper lamp 130 disposed therein. Each upper lamp 130 is coupled to a lamp base 129. Each lamp base 129 supports one of the upper lamps 130 and couples each of the upper lamps 130 to a power source. Each lamp 129 is fixed within a hole 128 in a generally vertical orientation. As described herein, the generally vertical orientation of the upper lamp 130 is approximately perpendicular to the substrate support surface of the base assembly 124. The vertical orientation of the upper lamp 130 is not necessarily perpendicular to the substrate support surface, but may be at an angle of approximately 30 degrees to approximately 150 degrees relative to the substrate support surface 153 of the base assembly 124. This angle can be approximately 45 degrees to approximately 135 degrees relative to the substrate support surface 153, such as approximately 70 degrees to approximately 110 degrees relative to the substrate support surface 153.

[0026] The upper lamp module 102 includes a heating gas passage 136 and a pyrometer passage 138. A heating gas supply source 132 is fluidly coupled to the heating gas passage 136. The heating gas passage 136 extends from the top surface to the bottom surface of the upper module body 126. The heating gas passage 136 is configured to allow heating gas (such as heated air or heated inert gas) to flow from the heating gas supply source 132 to the top surface of the upper viewing window 122 to convectively heat the upper viewing window 122. Heating gas is supplied to an upper gas chamber 180 defined between the upper lamp module 102 and the upper viewing window 122. A heating gas discharge passage 142 is also disposed through the upper module body 126. The heating gas discharge passage 142 is coupled to a heating discharge pump 140. The heating discharge pump 140 removes gas from the upper gas chamber 180. The heating discharge pump 140 can also be used as a discharge pump for processing volumes. In some embodiments, the heating gas discharge channel 142 may be formed as a groove along the edge of the upper module body 126 or through a separation component that is in fluid communication with the upper gas chamber 180.

[0027] A pyrometer channel 138 is positioned through the upper module body 126 to enable a pyrometer 134 (such as a scanning pyrometer) to measure the temperature of the substrate 150, such as during substrate processing operations. The pyrometer 134 is positioned on the top of the upper module body 126 adjacent to the pyrometer channel 138. The pyrometer channel 138 extends from the top surface of the upper module body 126 to the bottom surface adjacent to the upper viewing window 122.

[0028] A lower lamp module 104 is disposed below a base assembly 124 and configured to heat the underside of a substrate 150 disposed on the base assembly 124. The lower lamp module 104 includes a lower module body 182 and a plurality of lamp holes 186 disposed through the lower module body 182. Each of the plurality of lamp holes 186 includes a lower lamp 188 disposed therein. Each of the lower lamps 188 is disposed in a generally vertical orientation and coupled to a lamp base 184. Each lamp base 184 supports one of the lower lamps 188 and electrically couples each of the lower lamps 188 to a power source. As described herein, the generally vertical orientation of the lower lamps 188 is described with respect to a substrate support surface 153 of the base assembly 124. The generally vertical orientation is not necessarily perpendicular to the substrate support surface 906, but may be at an angle of approximately 30 degrees to approximately 150 degrees relative to the substrate support surface 153. The angle may be approximately 45 degrees to approximately 135 degrees relative to the substrate support surface 153, or approximately 70 degrees to approximately 110 degrees relative to the substrate support surface 153.

[0029] During substrate processing operations, the upper lamp 130 is powered to generate heat downward along the Z-axis toward the substrate 150 and the base 157. During substrate processing operations, the lower lamp 188 is powered to generate heat upward along the Z-axis toward the substrate 150 and the base 157.

[0030] The lower lamp module 104 includes a base shaft channel 195 and a pyrometer channel 192. A support shaft 155 of the base assembly 124 is mounted through the base shaft channel 195. The base shaft channel 195 passes through the middle of the lower module body 182. The base shaft channel 195 is configured to allow the support shaft 155 of the base assembly 124 and a portion of the lower viewing window 120 to pass through the lower module body 182.

[0031] The pyrometer channel 192 is positioned through the lower module body 182 so that the lower pyrometer 190 (such as a scanning pyrometer) can measure the temperature of the bottom surface of the substrate 150 or the bottom surface of the base 157 of the base assembly 124. The lower pyrometer 190 is positioned below the lower module body 182 adjacent to the pyrometer channel 192. The pyrometer channel 192 extends from the bottom surface of the lower module body 182 to the top surface of the lower module body 182 adjacent to the lower viewing window 120.

[0032] The chamber body assembly 106 includes an injection ring 116 and a base ring 114. The injection ring 116 is disposed on top of the base ring 114. The injection ring 116 includes one or more gas injectors 108 disposed therethrough. The base ring 114 includes a substrate transfer channel 162, one or more upper chamber discharge channels 159 (shaded in Figure 1A), and a lower chamber discharge channel 164 disposed therethrough. The substrate transfer channel 162 is disposed opposite to the one or more upper chamber discharge channels 159 and the lower chamber discharge channel 164. The one or more upper chamber discharge channels 159 may each include a portion disposed between the injection ring 116 and the base ring 114.

[0033] The upper chamber 111 is a portion of the processing volume 110 in which the substrate 150 is processed and one or more processing gases are injected. The lower chamber 113 is a portion of the processing volume 110 in which the substrate 150 is loaded into the base assembly 124. The upper chamber 111 can also be understood as the volume above the base 157 when the base assembly 124 is in the processing position. In Figure 1A, the base assembly 124 is illustrated in a lower position (e.g., for loading the substrate 150), and the processing position is an upper position in which the base 157 is raised above the lower position. The lower chamber 113 is understood as the volume below the base 157 of the base assembly 124 when the base assembly 124 is in the processing position. The processing position is a position in which the substrate 150 is flush with or above the horizontal plane 125. The horizontal plane 125 is the plane through which the injection ring 116 and the base ring 114 contact each other.

[0034] One or more upper chamber discharge channels 159 and lower chamber discharge channels 164 are coupled to one or more discharge pumps. The one or more discharge pumps are configured to remove exhaust gas from the processing volume 110 via one or more upper chamber discharge channels 159 and lower chamber discharge channels 164. In one embodiment that can be combined with other embodiments, each of the upper chamber discharge channels 159 and lower chamber discharge channels 164 is coupled to a single discharge pump using a plurality of conduits. In one embodiment that can be combined with other embodiments, the upper chamber discharge channel 159 is coupled to a different discharge pump than the lower chamber discharge channel 164.

[0035] A substrate transfer channel 162 is formed through a base ring 114 and configured to allow a substrate 150 to be loaded onto a base 157 to pass through the transfer chamber of the clustering tool. A flange 168 is attached to one end of the base ring 114 to enable the processing chamber 100 to be attached to the clustering tool. The substrate transfer channel 162 passes through the flange 168.

[0036] An upper cooling ring 118 and a lower cooling ring 112 are disposed on opposite sides of the chamber body assembly 106. The upper cooling ring 118 is disposed on top of and configured to cool the injection ring 116. The lower cooling ring 112 is disposed below the base ring 114 and configured to cool the base ring 114. The upper cooling ring 118 includes a coolant passage 146 through which it is disposed. The coolant circulating through the coolant passage 146 may include water or oil. The lower cooling ring 112 includes a coolant passage 148 through which it is disposed. The coolant circulating through the coolant passage 148 is similar to the coolant circulating through the coolant passage 146 of the upper cooling ring 118. The upper cooling ring 118 and the lower cooling ring 112 may help to hold the injection ring 116 and the base ring 114 in place. The upper cooling ring 118 can partially support the upper lamp module 102, while the lower cooling ring 112 can partially support the base ring 114 and the injection ring 116.

[0037] The clamping ring can be used to secure the injection ring 116 and the base ring 114 in place. This disclosure anticipates that the injection ring 116 can be integrated with the base ring 114, such that the injection ring 116 and the base ring 114 form a single, integral unit.

[0038] Using the upper cooling ring 118 and the lower cooling ring 112 can reduce the temperature of the injection ring 116 and the base ring 114 without requiring additional cooling channels to be placed through the injection ring 116 and the base ring 114. Using the upper cooling ring 118 and the lower cooling ring 112 reduces the cost of manufacturing the injection ring 116 and the base ring 114, and the injection ring 116 and the base ring 114 can be replaced more frequently compared to using the upper cooling ring 118 and the lower cooling ring 112. This disclosure anticipates that the injection ring 116 and the base ring 114 may include one or more additional cooling channels formed therein.

[0039] One or more gas injectors 108 are disposed through one or more openings within the injection ring 116. This disclosure contemplates that a plurality of gas injectors 108 may be disposed through the injection ring 116. One or more gas injectors 108 are configured to supply one or more processing gases to the processing volume 110 via one or more gas outlets 178. A single gas injector of the one or more gas injectors 108 is illustrated in Figure 1A. The gas injectors 108 are illustrated such that one or more gas outlets 178 point downward toward the base assembly 124 and the substrate 150. The downward angle of the gas injectors 108 may be greater than about 5 degrees with respect to the XY plane, such as greater than about 10 degrees with respect to the XY plane. Each of the one or more gas outlets 178 is fluidly coupled to one or more processing gas supply sources, such as a first processing gas supply source 174 and / or a second processing gas supply source 176. In some embodiments, only the first processing gas supply source 174 is utilized. In embodiments utilizing both a first processing gas supply source 174 and a second processing gas supply source 176, two gas outlets 178 may exist within each gas injector 108. The two gas outlets 178 are stacked and gas mixing occurs only after the gas has entered the processing volume 110. In an embodiment that can be combined with other embodiments, the first processing gas supply source 174 is a processing gas, while the second processing gas supply source 176 is a cleaning gas. The cleaning gas can be used to clean features of the reflectometer system 200 in the processing volume 110 and / or features of the reflectometer system 400 in the processing volume 110, as discussed below with respect to optional operation 510 of method 500. In an embodiment that can be combined with other embodiments, both the first processing gas supply source 174 and the second processing gas supply source 176 are processing gases.

[0040] An upper window 122 is disposed between the injection ring 116 and the upper lamp module 102. The upper window 122 is optically transparent, allowing radiant energy generated by the upper lamp module 102 to pass through it. The upper window 122 is formed of quartz or glass. The upper window 122 is dome-shaped and can be described as an upper dome. The upper window 122 may be conical. One or more peripheral supports 172 are formed on the outer edge of the upper window 122. The peripheral supports 172 are thicker than the central portion of the upper window 122. The peripheral supports 172 are disposed on the top of the injection ring 116. One or more peripheral supports 172 are connected to the central portion of the upper window 122. The peripheral supports 172 are opaque and may be formed of opaque quartz. The peripheral supports 172 may be annular.

[0041] A lower window 120 is disposed between the base ring 114 and the lower lamp module 104. The lower window 120 is optically transparent, allowing radiation energy generated by the lower lamp module 104 to pass through it. The lower window 120 is formed of quartz or glass. The lower window 120 may be dome-shaped and can be described as a lower dome. The lower window 120 may be conical. One or more peripheral supports 170 are formed on the outer edge of the lower window 120. The one or more peripheral supports 170 are thicker than the central portion of the lower window 120. The one or more peripheral supports 170 are connected to the central portion of the lower window 120 and are formed of an optically opaque material (such as opaque quartz). The one or more peripheral supports 170 may be annular.

[0042] Various gaskets and heaters are disposed inside the chamber body assembly 106 and within the processing volume 110. As shown in Figure 1A, an upper gasket 156 and a lower gasket 154 are disposed within the chamber body assembly 106. The upper gasket 156 is positioned above the lower gasket 154 and extends inward from the injection ring 116. The lower gasket 154 extends inward from the base ring 114. The upper gasket 156 and the lower gasket 154 are configured to be coupled together and / or the upper gasket 156 is supported on the lower gasket 154, both within the processing volume 110. The upper gasket 156 and the lower gasket 154 are configured to shield the inner surfaces of the injection ring 116 and the base ring 114 from the processing gas within the processing volume 110. The upper gasket 156 and the lower gasket 154 further serve to reduce heat loss from the processing volume 110 to the injection ring 116 and the base ring 114. The reduced heat loss improves the heating uniformity of the substrate 150 and enables more uniform deposition on the substrate 150 during substrate processing operations (e.g., epitaxial deposition operations).

[0043] Upper heater 158 and lower heater 152 are also disposed within the chamber body assembly 106 and the processing volume 110. As shown in Figure 1A, upper heater 158 is disposed between upper liner 156 and injection ring 116, while lower heater 152 is disposed between lower liner 154 and base ring 114. Both upper heater 158 and lower heater 152 are disposed inward from the chamber body assembly 106 to achieve more uniform heating of substrate 150, which is located within the processing chamber 100. Upper heater 158 and lower heater 152 reduce heat loss to the walls of chamber body assembly 106 and produce a more uniform temperature distribution around the surface forming the processing volume 110. Each of upper liner 156, lower liner 154, upper heater 158, and lower heater 152 may be coupled to a flange disposed within the processing volume 110. A flange may be configured to be fixed between a portion of the injection ring 116 and the base ring 114 to secure the horizontal surfaces of each of the upper gasket 156, lower gasket 154, upper heater 158, and lower heater 152. Both the upper heater 158 and lower heater 152 may be configured to allow heating fluid to flow through them or may be resistance heaters. The upper heater 158 and lower heater 152 are further shaped to accommodate openings through the injection ring 116 and the base ring 114. The lower gasket 154 includes a transfer opening 131 aligned with the transfer channel 162 and a discharge opening 133 aligned with the lower discharge channel 164. The lower heater 152 (if used) includes a transfer opening aligned with the transfer channel 162 and a discharge opening aligned with the lower discharge channel 164.

[0044] A base assembly 124 is disposed within a processing volume 110 and configured to support a substrate 150 during processing. The base assembly 124 includes a flat substrate support surface 153 for supporting the substrate 150 and a shaft 155 extending through a portion of a lower viewing window 120 and a lower lamp module 104. The base assembly 124 is coupled to a moving assembly 194. The moving assembly 194 includes a rotating assembly 196 and a lifting assembly 198. The rotating assembly 196 is configured to rotate the base assembly 124 about a central axis A, while the lifting assembly 198 is configured to linearly move the base assembly 124 along the central axis A within the processing volume 110. The rotating assembly 196 is configured to rotate both the base assembly 124 and the substrate 150 during substrate processing operations.

[0045] Figure 1B is a schematic cross-sectional view of the system 101 shown in Figure 1A according to one embodiment, along a section perpendicular to the section shown in Figure 1A.

[0046] System 101 includes a reflectometer system 200 at least partially disposed within a processing volume 110. The reflectometer system 200 includes a first block 210 and a second block 220 opposite the first block 210 in an XY plane perpendicular to the Z-axis. The first block 210 and the second block 220 are disposed within the processing volume 110. The first block 210 and the second block 220 are supported on a preheating ring 161. The preheating ring 161 is supported on a wedge-shaped portion 160 of a lower liner 154. The lower liner 154 and the base ring 114 form at least a portion of one or more sidewalls of the chamber body assembly 106.

[0047] Figure 2 is a partially schematic top view of the system 101 shown in Figures 1A and 1B according to one embodiment. A first block 210 includes a flat first inner surface 211 and a first curved outer surface 212. The first curved outer surface 212 interfaces (e.g., contacts) with the upper pad 156 shown in Figure 1B. A first window 214 and a second window 215 are formed in the first inner surface 211. The second window 215 is wider than the first window 214. Each of the first window 214 and the second window 215 is a transparent quartz window. In one embodiment that can be combined with other embodiments, the first window 214 and the second window 215 allow light of a predetermined wavelength (the wavelength described below with respect to light 241) to pass through while blocking light of other wavelengths. A light emitter 213 is disposed in the first block 210 and oriented toward the first inner surface 211. The light emitter 213 is at least partially disposed within the first block 210 and at least partially disposed between the first window 214 and the first curved outer surface 212. A light receiver 216 is disposed within the first block 210 and oriented toward the first inner surface 211. The light receiver 216 is at least partially disposed within the first block 210 and at least partially disposed between the second viewing window 215 and the first curved outer surface 212. As shown in Figure 2, the second block 220 is opposite the first block 201 in the XY plane. The second block 220 includes a flat second inner surface 221 facing the first inner surface 211, a second curved outer surface 222, and a sample opening 223 formed in the second inner surface 221. The second inner surface 221 is parallel to the first inner surface 211. The reflectometer system 200 includes a first connector rod 231 and a second connector rod 233 separating the first block 210 and the second block 220. The first connector rod 231 and the second connector rod 233 are each formed of quartz (such as transparent or opaque quartz) or graphite coated with silicon carbide (SiC). The first connector rod 231 and the second connector rod 233 facilitate holding the first block 210 and the second block 220 against the sidewall of the processing chamber 100 (e.g., against the upper liner 156). Using the first connector rod 231 and the second connector rod 233 and the preheating ring 161, the rotation of the first block 210 and the second block 220 is reduced or eliminated when the base 157 and the substrate 150 are rotated using the rotating assembly 196, thereby promoting reduced noise from rotation and facilitating accurate monitoring of film growth.

[0048] A crystalline sample 240 is disposed on or at least partially disposed within a second block 220. The crystalline sample 240 is formed of silicon carbide (SiC). The crystalline sample 240 is disposed and held in a sample opening 223 formed in a second inner surface 221. During substrate processing operations, a light emitter 213 guides light 241 through a first viewing window 214 toward the front side of the crystalline sample 240. The light 241 is emitted through one or more optical fiber cables 217 of the light emitter 213. The light 241 is reflected from the crystalline sample 240 as reflected light 242. In one embodiment that may be combined with other embodiments, the front surface of the crystalline sample 240 (on which a film 251 is deposited) is polished. The reflected light 242 is collected by a light receiver 216 through a second viewing window 215. The reflected light 242 is collected through a transparent light collector 218 disposed in the first block 210 and one or more optical fiber cables 219 coupled to the transparent light collector 218. The transparent light collector 218 includes a prism and / or a lens. In the embodiment shown in Figure 2, the transparent light collector 218 includes a prism. As reflected light 242 passes through the transparent light collector 218 and onto one or more fiber optic cables 219, the transparent light collector 218 refracts the reflected light 242. One or more fiber optic cables 217 of the light emitter 213 are coupled to the light source 244. One or more fiber optic cables 219 of the light receiver 216 couple the transparent light collector 218 to the sensor 245. The light source 244 and the sensor 245 may be part of the same optical module 243. One or more fiber optic cables 219 transmit the reflected light 242 to the sensor 245. The transparent light collector 218 includes a viewing angle A2 greater than 45 degrees, such as in the range of 70 to 170 degrees. The viewing angle A2 facilitates increased collection and monitoring accuracy of the reflected light 242.

[0049] This disclosure contemplates the possibility of omitting the first viewport 214, and that both one or more fiber optic cables 217 and one or more fiber optic cables 219 can be aligned with the second viewport 215 along two corresponding axes parallel to the Y-axis. In this embodiment, the transparent light collector 218 can be omitted.

[0050] Sensor 245 is configured to measure the light intensity of reflected light 242. In one embodiment that can be combined with other embodiments, sensor 245 includes a spectrometer (e.g., a spectrograph) configured to measure wavelength-resolved intensity. Sensor 245 may include a grating, an optical lens, and / or a linear array photodiode detector. Light source 244 is configured to generate light 241 at wavelengths in the range of 300 nanometers (nm) to 700 nanometers (e.g., in the range of 300 nm to 600 nm). In one embodiment that can be combined with other embodiments, light 244 has a wavelength in the range of 580 nm to 620 nm. In one embodiment that can be combined with other embodiments, light 241 is infrared (IR) light. In one embodiment that can be combined with other embodiments, light 241 is visible light. In one embodiment that can be combined with other embodiments, light 241 is broadband light.

[0051] Each of the first block 210 and the second block 220 is formed of graphite. The graphite in each of the first block 210 and the second block 220 is coated with silicon carbide (SiC). The crystalline sample 240 has a crystalline structure. The crystalline structure can be 3C, 4H, or 6H. Other crystalline structures are expected. In the embodiment shown in Figure 2, the crystalline structure is 3C.

[0052] In the embodiment shown in Figure 2, the photoreceiver 216 collects reflected light reflected at an angle A1 relative to the light 241. During the substrate processing operation, one or more processing gases G1 are injected from the injection side into the discharge side of the processing chamber 100 through the processing volume 110, while the upper lamp 130 and lower lamp 188 heat the substrate 150. The one or more processing gases G1 and the heat promote epitaxial deposition of a film on the substrate 150. The one or more processing gases G1 and the heat also promote epitaxial deposition of a film on the crystalline sample 240. While the one or more processing gases G1 are flowing and the lamps 130 and 188 are heating the substrate 150, light 241 is emitted and reflected light 241 is collected to determine the light intensity of the reflected light 241. The measured light intensity of the reflected light 241 is used to determine the film thickness and / or growth rate of the film 251 deposited on the crystalline sample 240. The film 251 deposited on the crystalline sample 240 and the film deposited on the substrate 150 each comprise silicon (Si) and / or silicon germanium (SiGe). This disclosure contemplates the use of other film materials, such as silicon phosphide (SiP), silicon arsenide (SiAs), boron-doped silicon germanium (SiGeB), and / or one or more other Group III, IV, and / or V elements. The thickness of the film 251 deposited on the crystalline sample 240 affects the light intensity of the reflected light 241, such that a change in light intensity can signal a change in the thickness of the film 251 deposited on the crystalline sample 240. In one embodiment, which can be combined with other embodiments, a lower light intensity indicates a higher film thickness on the crystalline sample 240, and a higher light intensity indicates a lower film thickness on the crystalline sample 240. In one embodiment, which can be combined with other embodiments, the light intensity of the reflected light 241 is continuously monitored throughout the substrate processing operation. This disclosure contemplates that changes in light intensity may be non-linear and may occur sinusoidally. Compared to a structure in which light is guided vertically upwards or downwards toward the substrate 150, the beam paths of light 241 and reflected light 242 are reduced, thereby facilitating accurate monitoring of film growth.

[0053] Each of one or more fiber optic cables 217, the first window 214, one or more fiber optic cables 219, the transparent light collector 218, and / or the second window 215 may be oriented parallel to the Y-axis (as shown in Figure 2), such that its centerline axis is parallel to the Y-axis. Each of one or more fiber optic cables 217 and / or the first window 214 may be oriented at an angle A3 relative to a first reference axis RA1 parallel to the Y-axis, such that its centerline axis is positioned at an angle A3 relative to the first reference axis RA1.

[0054] Each of one or more fiber optic cables 219, transparent light collectors 218, and / or second windows 215 may be oriented at an angle A3 relative to a second reference axis RA2 parallel to the Y-axis, such that its centerline axis is positioned at an angle A3 relative to the second reference axis RA2. Angle A3 is approximately half of angle A1. In one embodiment that can be combined with other embodiments, the centerline axis of one or more fiber optic cables 217 and the first window 214 may be coaxial with a first axis 281 positioned at an angle A3 relative to the first reference axis RA1. In one embodiment that can be combined with other embodiments, the centerline axis of one or more fiber optic cables 219, transparent light collectors 218, and / or second windows 215 may be coaxial with a second axis 282 positioned at an angle A3 relative to the second reference axis RA2. The reflectometer system 200 can be used to monitor the film growth rate in the processing volume 110 in situ and in real time, while the substrate processing operation is performed on a substrate 150 supported on a base 157. Because light 241 is emitted in the XY plane and reflected light 242 is reflected and collected in the XY plane, interference from light irradiated by lamps 130 and 188 is reduced. The likelihood of light from lamps 130 and 118 being collected and emitted to sensor 245 and / or being washed away by light 241 and reflected light 242 is reduced. The light irradiated by lamps 130 and 188 includes at least one vector parallel to the Z-axis, which is perpendicular to light 241 and reflected light 242 to reduce interference from the irradiated light on light 241 and reflected light 242, thereby facilitating real-time in-situ and accurate growth rate monitoring during substrate processing operations. The reduced interference promotes an increased noise ratio for sensor 245 of reflectometer system 200 for accurate film growth measurement. The reduced interference also facilitates the use of a shorter wavelength of light 241 to increase the resolution of sensor 245 of reflectometer system 200 for accurate film growth measurement. The crystallized sample 240 is used to simulate epitaxial deposition of the film on the substrate 150 without directly monitoring the film growth on the substrate 150, thereby reducing the need for guiding light 241 downward or upward toward the substrate 150.

[0055] The configuration of the reflectometer system 200 (such as blocks 210, 220 and connector rods 231, 233) facilitates heating the crystallized sample 240 to a temperature similar to that reached when heating the substrate 150, thereby facilitating accurate simulation of film growth on the substrate 150. The crystallized sample 240 is located close to the substrate 150, such as along the XY plane, which further promotes accurate simulation while minimizing disruption to the uniformity of film growth on the substrate 150.

[0056] Figure 3A is a front isometric view of the first block 210, second block 220, first rod connector 231, and second rod connector 233 shown in Figure 2 according to one embodiment. Figure 3B is a rear isometric view of the first block 210, second block 220, first rod connector 231, and second rod connector 233 shown in Figure 3A according to one embodiment. Figure 3C is a front isometric view of the first block 210 shown in Figure 3A according to one embodiment. Figure 3D is a front isometric view of the second block 220 shown in Figure 3B according to one embodiment.

[0057] Each of the first connector rod 231 and the second connector rod 233 is a ring component of a ring segment. The outer edge 267 of the first connector rod 231, the outer edge 269 of the second connector rod 233, the first curved outer surface 212, and the second curved outer surface 222 together form concentric circles in the XY plane.

[0058] The first connector rod 231 is housed in a first recess 246 formed in the first inner surface 211 and a first recess 247 formed in the second inner surface 221. The second connector rod 233 is housed in a second recess 248 formed in the first inner surface 211 and a second recess 249 formed in the second inner surface 221. One or more of the first block 210, the second block 220, the first connector rod 231, the second connector rod 233, and / or the preheating ring 161 can be integrated into a single unit.

[0059] Figure 4 is a partially schematic top view of system 101 shown in Figures 1A and 1B according to one embodiment. System 101 includes a reflectometer system 400, which is similar to reflectometer system 200 shown in Figures 1A, 1B, and 2, and may include one or more of its features, configurations, components, and / or properties. The reflectometer includes a first block 410 and a second block 420 opposite to the first block 410 in the XY plane. The second block 420 is similar to the second block 220, but does not include the sample opening 223.

[0060] The first block 410 is similar to the first block 210, and the first block 410 includes a sample opening 423 formed in the first inner surface 211.

[0061] A crystalline sample 440 is mounted on or at least partially within a first block 410. The crystalline sample 440 is positioned and held within a sample opening 423. A reflectometer system 400 includes one or more fiber optic cables 417 (one fiber optic cable is illustrated in Figure 4) positioned at least partially within the first block 410. A viewing window 414 is formed in the first block 410 between the one or more fiber optic cables 417 and the sample opening 423. Each of the one or more fiber optic cables 417 includes a light transmitter having one or more incident fibers 413 and a light receiver having one or more outgoing fibers 416. The one or more incident fibers 413 are coupled to a light source 244. The one or more incident fibers 413 guide light 441 through the viewing window 414 and through the crystalline sample 440. The light 441 is reflected as reflected light 442 from a film 251 deposited on the crystalline sample 440. In the embodiment shown in Figure 4, the light 441 and the reflected light 442 are parallel to each other in the XY plane. One or more outgoing optical fibers 416 collect reflected light 442 and transmit the reflected light 442 to the sensor 245, so that the light intensity of the reflected light 442 can be measured and the growth rate of the film 251 can be determined and monitored.

[0062] The crystalline sample 440 is formed of silicon carbide (SiC) and has a crystalline structure. The crystalline structure can be 3C, 4H, or 6H. Other crystalline structures are contemplated. In the embodiment shown in Figure 4, the crystalline structure is 6H to facilitate the passage of light 441 through the crystalline sample 440 to the film 251.

[0063] As shown in Figure 1B, one or more fiber optic cables 217, one or more fiber optic cables 219, and / or one or more fiber optic cables 417 are partially disposed in the first blocks 210, 410, and extend through the processing chamber 100 to the optical module 243 to be coupled to the light source 244 and / or the sensor 245, respectively. The corresponding one or more fiber optic cables 217, one or more fiber optic cables 219, and / or one or more fiber optic cables 417 extend through the base ring 114, the injection ring 116, and / or the upper gasket 156, as shown in Figure 1B. This disclosure contemplates that the corresponding one or more fiber optic cables 217, one or more fiber optic cables 219, and / or one or more fiber optic cables 417 may extend through an exhaust cover, such as the upper module body 126 and / or the upper window 122. The optical module 243, having the light source 244 and the sensor 245, is disposed outside the processing volume 110 and on the exterior of the processing chamber 100. In one embodiment, which can be combined with other embodiments, the optical module 243 is mounted on the outer surface of the processing chamber 100. The optical module 243, located outside the processing volume 110, facilitates easy maintenance and reduces or eliminates the effects of heat and processing gases on the light source 244 and sensor 245, thereby facilitating accurate monitoring of film growth.

[0064] Referring to Figures 1A and 1B, system 101 includes a controller 189 coupled to processing chamber 100 to control the operation of processing chamber and reflectometer systems 200, 400. Controller 189 includes a central processing unit (CPU) 191, instruction memory 193, and support circuitry 197 for CPU 191. Controller 189 is directly or via another computer and / or coupled to the controller control system 101 of processing chamber 100. Controller 189 has any form of general-purpose computer processor used in industrial installations to control various chambers and devices, and their subprocessors.

[0065] Memory 193, or one or more readily available memories such as random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of digital storage (local or remote), is used. Support circuitry 197 is coupled to CPU 191 to support CPU 191 (processor). Support circuitry 197 includes cache memory, a power supply, clock circuitry, input / output circuitry systems, subsystems, and the like. Board processing parameters and operations are stored in memory 193 as software routines, which are executed or invoked to transform controller 189 into a dedicated controller to control the operation of system 101. Controller 120 is configured to perform any of the methods described herein. When instructions are executed, these instructions stored in memory 193 cause one or more operations 502-512 of method 500 to be performed.

[0066] Controller 189 is coupled to light source 244 and sensor 245 of optical module 243. Controller 189 is configured to instruct light source 244 to supply light 241, receive measured light intensity values ​​from sensor 245, and use the light intensity values ​​to determine the film thickness and / or film growth rate of film 251 on crystallized samples 240, 440. A plurality of instructions executed by controller 189 include instructions that cause such operations to be performed. Instructions in memory 193 of controller 189 may include one or more machine learning / artificial intelligence algorithms executable in addition to the operations described herein. The determined film thickness and / or film growth rate of film 251 may be stored in memory 193 for subsequent film growth monitoring operations.

[0067] As an example, the machine learning / artificial intelligence algorithm executed by controller 189 can optimize and modify the operating parameters of system 101 based on film thickness and / or film growth rate. One or more operating parameters may include: the flow rate and / or temperature of the process gas, the power supplied to the upper and / or lower lamps, the processing temperature of the substrate, the operating time in which the substrate processing operation is performed, and / or the processing pressure in the processing volume. For example, controller 189 may be coupled to a vacuum pump, lower lamp 188, rotating assembly 196, lifting assembly 198, first process gas supply source 174, second process gas supply source 176, upper lamp 130, heating gas supply source 132, and / or heating exhaust pump 140. For example, controller 189 may be coupled to one or more mass flow controllers (MFCs) coupled between the first process gas supply source 174 and the second process gas supply source 176.

[0068] The sensor 245 and / or controller 189 can be calibrated to target parameters, such as target film thickness or target film growth rate, which are predetermined from the substrate processing operation.

[0069] Figure 5 is a schematic block diagram of a film growth method 500 for monitoring substrate processing operations according to one embodiment. Operation 502 includes performing a substrate processing operation on a substrate supported on a base disposed in a processing volume within a processing chamber. The substrate processing operation includes influencing one or more processing gases into the processing volume and heating the substrate. Heating the substrate includes generating heat toward the substrate along the Z-axis.

[0070] The substrate processing operation may be an epitaxial deposition operation. Operation 504 includes, during the substrate processing operation, guiding light from a light emitter disposed in the first block toward a crystalline sample coupled to a second block opposite to the first block. The guiding light includes guiding light from the light emitter toward the crystalline sample along an XY plane perpendicular to the Z-axis.

[0071] Operation 506 includes collecting reflected light from the crystalline sample. The reflected light is collected by a transparent light collector disposed in the first block and transmitted to a sensor disposed outside the processing volume.

[0072] Operation 508 includes determining the growth rate of the crystallized sample using reflected light. Determining the growth rate includes measuring a plurality of light intensity values ​​of reflected light across one or more time intervals. The plurality of light intensity values ​​are correlated with Fresnel's equation for electromagnetic wave reflection and a reference or physical model to determine the growth rate across one or more time intervals. The growth rate may correspond to changes in light intensity across one or more time intervals. The film thickness may be determined using the growth rate at a given time interval. Optional operation 510 includes cleaning the first and / or crystallized sample. The sample opening of the first sample, the sample opening of the second sample, one or more viewing windows of the first sample, the first and second inner surfaces of the first and second samples, and / or the crystallized sample are cleaned in optional operation 510. Cleaning the crystallized sample may include cleaning the film deposited on the crystallized sample. The crystallized sample may be removed from the corresponding sample opening to clean the corresponding sample opening and / or one or more viewing windows of the first sample.

[0073] Optional operation 512 includes one or more operating parameters used in the growth rate adjustment substrate processing operation determined by operation 508. For example, if the growth rate is too high or too low, one or more operating parameters can be adjusted to correct the growth rate to be equal to or closer to the target growth rate. Adjustment optional operation 512 can occur during the substrate processing operation and / or in subsequent iterations of the substrate processing operation performed on the second substrate. One or more operating parameters may include: the flow rate and / or temperature of the processing gas, the power supplied to the upper and / or lower lamps, the processing temperature of the substrate, the operation time in which the substrate processing operation is performed, and / or the processing pressure in the processing volume.

[0074] This disclosure contemplates the repeatability of operations 502-512 of method 500. In one embodiment, which may be combined with other embodiments, operations 502-512 are repeated for the second substrate after the substrate is removed from the processing volume of the processing chamber and the second substrate is transferred into the processing volume. This disclosure contemplates that the same crystalline sample may be used to process the second substrate, or that the crystalline sample may be replaced by the second crystalline sample for processing the second substrate.

[0075] Figure 6 is a schematic plan view of an optical module 600 according to one embodiment. The optical module 600 can be used as an optical module 243.

[0076] Optical module 600 includes a focusing lens 601 with a mounting adapter and a beam splitter 603. Beam splitter 603 allows light 441 from light source 605 to pass through focusing lens 601 and through one-way filter assembly 607 to guide reflected light 442 to sensor 609. Black absorber 630 is coupled to beam splitter 603. Black absorber 630 absorbs light 441 and / or reflected light 442 arriving at black absorber 630 to facilitate or eliminate reduced multiple reflections of light. Black absorber 630 facilitates dissipation of transmitted energy. Light source 605 may include a condenser. Light source 605 includes one or more light emitting diodes (LEDs). In one embodiment that may be combined with other embodiments, sensor 609 includes a silicon photodiode and an amplifier. Sensor 609 converts an analog reflected light signal into a digital signal 611 indicating the intensity of the measured light and sends digital signal 611 to controller 189. The light source 605 is coupled to the driver 615, such as an LED driver. The driver 615 is coupled to the power supply 617.

[0077] The one-way filter assembly 607 facilitates reduction of interference from thermal light emanating from the lamp and promotes an increased noise-to-noise ratio for accurate film growth monitoring. In one embodiment, which may be combined with other embodiments, the one-way filter assembly 607 filters the portion of reflected light 442 having a vertical vector as it passes through the one-way filter assembly 607 toward the sensor 609. The vertical vector is perpendicular to the direction extending from the one-way filter assembly 607 toward the sensor 609.

[0078] The benefits of this disclosure include in-situ and real-time membrane growth measurement operations, accurate membrane growth monitoring, increased noise ratio, use of reduced optical wavelengths, increased measurement resolution, increased efficiency and throughput, reduced machine downtime, and lower costs.

[0079] It is anticipated that one or more of the features disclosed herein may be incorporated. For example, one or more features, characteristics, components, and / or properties of system 100, processing chamber 100, reflectometer system 200, reflectometer system 400, and / or method 500 may be incorporated. Furthermore, it is anticipated that one or more features disclosed herein may include some or all of the previously mentioned benefits.

[0080] This disclosure achieves an unexpected result, since it has been recognized that measuring film growth within the processing volume of a processing chamber would involve inaccuracies caused by the use of upper and lower domes and / or light irradiation from lamps illuminating the heated substrate. This disclosure achieves the aforementioned benefits compared to performing film measurements on the substrate after processing and removal from the processing chamber.

[0081] Although the foregoing relates to embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from its basic scope. This disclosure also contemplates that one or more of the embodiments described herein may replace one or more of the other described embodiments. The scope of this disclosure is determined by the following claims.

[0082] 100: Processing Chamber 101: System 102: Upper Light Module 104: Lower Light Module 106: Chamber main body assembly 108: Gas Injector 110: Processing volume 111: Upper chamber 112: Lower cooling ring 113:Lower chamber 114: Basal ring 116: Injection Ring 118: Upper cooling ring 120: Bottom Window 122: Top window 124: Base assembly 125: Horizontal plane 126: Upper Module Main Body 128: Light hole 129: Lamp base 130: Upper Light 131: Transfer opening 132: Heating gas supply source 133: Emission opening 134: Pyrometer 136: Heating Gas Channel 138: High Temperature Gauge Channel 140: Heating Discharge Pump 142: Heated gas exhaust channel 146: Coolant passage 148: Coolant passage 150:Substrate 152: Lower heater 153: Substrate support surface 154: Lower padding 155: Shaft 156: Upper padding 157: Base 158: Upper heater 159: Upper chamber discharge channel 160: Wedge-shaped part 161: Preheating ring 162: Substrate transfer channel 168: Flange 170: Peripheral support components 172: Peripheral support components 174: First Processing Gas Supply Source 176: Second processing gas supply source 178: Gas outlet 180: Upper air chamber 181: 182: Lower Module Main Body 184: Lamp base 186: Light hole 188:Lower light 189: Controller 190: Lower pyrometer 191: Central Processing Unit (CPU) 192: Pyrometer Channel 193: Memory 194: Mobile Components 195: Base shaft channel 196: Rotating component 197: Support Circuit 198: Component Enhancement 200: Reflectometer System 210: The first piece 211: First inner surface 212: First curved outer surface 213: Light emitter 214: First Window 215: Second Window 216: Optical Receiver 217: Fiber Optic Cable 218: Light Collector 219: Fiber Optic Cable 220: The second piece 221: Second inner surface 222: Second curved outer surface 223: Sample opening 231: First connector rod 233: Second connector rod 240: Crystallized sample 241: Light 242: Reflected light 243: Optical Module 244: Light Source 245: Sensor 246: First depression 247: First depression 249: Second depression 251: Membrane 267: Outer edge 269: Outer edge 281: First Axis 282: Second Axis 400: Reflectometer System 410: The first piece 413: Incident optical fiber 414: Windows 416: Outgoing optical fiber 417: Fiber Optic Cable 420: The second piece 423: Sample opening 440: Crystallized sample 441: Light 442: Reflected light 500: Methods 502: Operation 504: Operation 506: Operation 508: Operation 510: Operation 512: Operation 600: Optical Module 601: Focusing Lens 603: Beam splitter 605: Light Source 607: One-way filter assembly 609: Sensor 611: Digital Signal 613: 617: Power Supply 630: Black Absorber A: Central axis A1: Oblique angle A3: Oblique angle G1: Gas Processing RA1: First reference axis RA2: Second reference axis X: axis Y: axis Z: Axis

[0083] Domestic storage information (please note in order of storage institution, date, and number) none Overseas storage information (please note in the order of storage country, institution, date, and number) none

Claims

1. A reflectometer system for monitoring film growth during substrate processing operations, comprising: a first block including a first inner surface; a light emitter disposed in the first block and oriented toward the first inner surface; a light receiver disposed in the first block and oriented toward the first inner surface; a second block opposite to the first block, the second block including: a second inner surface facing the first inner surface; and a first connector rod and a second connector rod, the first connector rod and the second connector rod being coupled to the first block and the second block, and the first connector rod and the second connector rod being separated from the first block and the second block.

2. The reflectometer system as claimed in claim 1, wherein each of the first block and the second block is formed of graphite.

3. The reflectometer system as claimed in claim 2, wherein each of the first and second blocks is coated with silicon carbide (SiC).

4. The reflectometer system as claimed in claim 1, wherein each of the first inner surface and the second inner surface is flat, and the second inner surface is parallel to the first inner surface.

5. The reflectometer system as claimed in claim 4, wherein an outer edge of the first connector rod, an outer edge of the second connector rod, a first curved outer surface of the first block, and a second curved outer surface of the second block together form a concentric circle.

6. The reflectometer system of claim 1, wherein the first connector rod is received in a first recess formed in the first inner surface and in a first recess formed in the second inner surface, and the second connector rod is received in a second recess formed in the first inner surface and in a second recess formed in the second inner surface.

7. The reflectometer system of claim 1, wherein the second block further includes a sample opening formed in the second inner surface, the light receiver includes a transparent light collector disposed in the first block, and the reflectometer system further includes at least partially disposed in one of the crystalline samples in the sample opening, wherein the crystalline sample is formed of silicon carbide (SiC).

8. The reflectometer system of claim 1, wherein the first block further includes a sample opening formed in the first inner surface, and the reflectometer system further includes a crystalline sample at least partially disposed in the sample opening, wherein the crystalline sample is formed of silicon carbide (SiC).

9. A system for processing a substrate, comprising: a processing chamber including a processing volume; a base disposed in the processing volume; a plurality of lamps configured to generate heat toward the base along a Z-axis; a preheating ring supported on a side wall of the processing chamber; and a reflectometer system comprising: a first block disposed in the processing volume, the first block including a first inner surface; and a light emitter disposed in the first block and oriented toward the first inner surface; A light source is coupled to the light emitter; A light receiver is disposed in the first block and oriented toward the first inner surface; A sensor is coupled to the light receiver; A second block is disposed in the processing volume and is opposite to the first block in an XY plane perpendicular to the Z-axis. The second block includes a second inner surface facing the first inner surface. The first connector rod and the second connector rod are coupled to the first block and the second block, and the first connector rod and the second connector rod are separated from the first block and the second block.

10. The system of claim 9, wherein each of the first block and the second block is formed of graphite, and each of the first block and the second block is coated with silicon carbide (SiC).

11. The system of claim 9, wherein each of the first inner surface and the second inner surface is flat, and the second inner surface is parallel to the first inner surface.

12. The system as described in claim 11, wherein: The first connector rod separates the first block and the second block in the XY plane, wherein the first connector rod is received in a first recess formed in the first inner surface and a first recess formed in the second inner surface; and the second connector rod separates the first block and the second block in the XY plane, wherein the second connector rod is received in a second recess formed in the first inner surface and a second recess formed in the second inner surface.

13. The system of claim 9, wherein the second block further includes a sample opening formed in the second inner surface, the light receiver includes a transparent light collector disposed in the first block and one or more optical fiber cables coupling the transparent light collector to the sensor, and the reflectometer system further includes at least partially disposed in one of the crystalline samples in the sample opening, wherein the crystalline sample is formed of silicon carbide (SiC).

14. The system of claim 13, wherein the optical transmitter comprises one or more optical fiber cables coupled to the light source.

15. The system of claim 9, wherein the first block further includes a sample opening formed in the first inner surface, and the reflectometer system further includes at least partially disposed in one of the crystalline samples, wherein the crystalline sample is formed of silicon carbide (SiC).

16. The system as claimed in claim 9, wherein the first block and the second block are supported on the preheating ring.

17. The system of claim 16, wherein the sidewall includes a liner fitted into a base ring.

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