Method for epitaxially depositing material on substrate and process chamber assembly for processing substrate

Abstract

The embodiments described herein include processes and apparatus related to epitaxial deposition. A method for epitaxially depositing materials is provided, the method comprising the steps of: placing a substrate on a substrate support surface of a carrier within a process volume of a chamber body, wherein the process volume includes an upper chamber region and a lower chamber region. The method comprises the steps of: allowing a process gas containing one or more chemical precursors to flow from an upper gas inlet on a first side of the chamber body through the substrate and to an upper gas outlet on a second side of the chamber body; allowing a purge gas to flow from a lower gas inlet on the first side of the chamber body through a lower surface of the carrier and to a lower gas outlet on the second side of the chamber body; and maintaining a pressure in the lower chamber region greater than the pressure in the upper chamber region.

Description

[Technical Field]

[0001] The embodiments of this disclosure are generally related to processes and apparatus for manufacturing microelectronic devices, and more specifically to processes and apparatus for epitaxial deposition. [Previous Technology]

[0002] Substrate processing has a wide range of applications, including the manufacture of microelectronic devices. During manufacturing processes, substrates are placed on carriers within a process chamber and exposed to deposition and etching processes, while multiple films are formed and removed from the substrate to produce microelectronic devices. However, during processing, variations in process parameters (such as temperature, pressure, and process gas flow rates) can cause variations in the thickness and / or profile of the films on the substrate, as well as the formation and distribution of contaminants throughout the process chamber and on the substrate. Variations in thickness and / or contaminants can cause one or more artifacts within the films, leading to malfunctions within the microelectronic devices. The corresponding substrates must be discarded, resulting in reduced production yields and increased manufacturing costs. Furthermore, the accumulation of contaminants throughout the process chamber (especially on the back side of the carrier) can lead to extended downtime for cleaning processes, thereby reducing overall manufacturing efficiency.

[0003] Therefore, it is necessary to improve the epitaxial deposition process and the associated epitaxial process chambers used to perform such epitaxial deposition processes. [Summary of the Invention]

[0004] The embodiments described herein include processes and apparatus for manufacturing microelectronic devices, and more particularly with respect to epitaxial deposition processes and apparatus. In one or more embodiments, a method for epitaxially depositing material on a substrate is provided, the method comprising the steps of: placing the substrate on a substrate support surface of a carrier within a process volume of a chamber body, wherein the process volume includes an upper chamber region and a lower chamber region, and during the epitaxial process, the substrate support surface is located in the upper chamber region and the lower surface of the carrier is located in the lower chamber region. The method also includes the following steps: during the epitaxial process, a process gas containing one or more chemical precursors flows from an upper gas inlet on a first side of the chamber body through the substrate and to an upper gas outlet on a second side of the chamber body; during the epitaxial process, a purge gas flows from a lower gas inlet on the first side of the chamber body through the lower surface of the carrier and to a lower gas outlet on the second side of the chamber body; and during the epitaxial process, the pressure in the lower chamber region is maintained greater than the pressure in the upper chamber region.

[0005] In some embodiments, a method for epitaxially depositing material on a substrate is provided, the method comprising the steps of: placing the substrate on a substrate support surface of a carrier within a process volume of a chamber body, wherein the process volume includes an upper chamber region and a lower chamber region, and during the epitaxial process, the substrate support surface is located in the upper chamber region, and the lower surface of the carrier is located in the lower chamber region. The method also comprises the steps of: during the epitaxial process, allowing a process gas containing at least a silicon precursor to flow from an upper gas inlet on a first side of the chamber body through the substrate and to an upper gas outlet on a second side of the chamber body; during the epitaxial process, allowing a purge gas to flow from a lower gas inlet on the first side of the chamber body through the lower surface of the carrier and to a lower gas outlet on the second side of the chamber body; and during the epitaxial process, maintaining the pressure in the lower chamber region at approximately 1% to approximately 5% higher than the pressure in the upper chamber region. The pressure in the lower chamber region can be maintained at a higher pressure than that in the upper chamber region by one or more of the following steps: increasing the exhaust rate of the process gas through the upper gas outlet; decreasing the exhaust rate of the purified gas through the lower gas outlet; and / or increasing the flow rate of the purified gas through the lower gas inlet.

[0006] In other embodiments, a process chamber assembly for processing a substrate is provided, the process chamber assembly comprising: a chamber body; a process volume housed within the chamber body, wherein the process volume has an upper chamber region and a lower chamber region; and a substrate support assembly including a carrier having a substrate support surface opposite to a lower surface and disposed within the process volume, wherein the substrate support assembly is configured to place the carrier in a vertical direction between a loading position and a processing position within the processing region, and when the carrier is in the process volume... In the processing position, the substrate support surface is located in the upper chamber region, and the lower surface is located in the lower chamber region. The process chamber also includes: a first gas system in the upper chamber region, the first gas system comprising an upper gas inlet on a first side of the chamber body and an upper gas outlet on a second side of the chamber body opposite to the first side; and a second gas system in the lower chamber region, the second gas system comprising a lower gas inlet on the first side of the chamber body and a lower gas outlet on the second side of the chamber body. The process chamber further includes: a gap disposed peripherally and radially around the carrier, wherein the gap is disposed between the carrier and the inner surface of the chamber body, and the upper chamber region and the lower chamber region are in fluid communication with each other through the gap.

Implementation Method

[0021] The embodiments described herein include processes and apparatus for manufacturing microelectronic devices, and more particularly, processes and apparatus for epitaxial deposition. In one or more embodiments, the process volume within the chamber body is divided or otherwise separated by a carrier to form an upper chamber region and a lower chamber region. The upper chamber region and the lower chamber region are in fluid communication with each other. During the epitaxial process, a process gas containing one or more chemical precursors flows over the substrate on the top side or upper surface of the carrier in the upper chamber region, while a purge gas flows over the back side or lower surface of the carrier in the lower chamber region. During the epitaxial process, the pressure in the lower chamber region is maintained at a value greater than that in the upper chamber region. The pressures in the upper and lower chamber regions are maintained and / or controlled such that both the diffusion of process gas into the lower chamber region and the diffusion of purge gas into the upper chamber region are minimized during the epitaxial process. Minimizing gas diffusion between the upper and lower chamber regions provides ideal conditions for epitaxial deposition on the substrate in the upper chamber region, while also reducing or preventing contaminants from appearing in the lower chamber region, especially on the back side of the carrier.

[0022] The process chamber assembly is configured as a thermal deposition chamber, such as an epitaxial deposition chamber. The process chamber disclosed herein improves the flow of process gases and the heating of the substrate. Compared to conventional chambers, this process chamber has lower component costs, thus reducing the cost of replacing portions of the process chamber after partial wear of the chamber body, or when an improved design of a portion of the chamber body becomes available. The disclosed process chamber overcomes conventional challenges, including improving the flow of process gases through the chamber volume and making thermal control more uniform, which enables increased throughput and improved process yield.

[0023] Additionally, this document discloses components of a process chamber assembly. The components disclosed herein include a jet ring, a base ring, an upper lamp module, a lower lamp module, a carrier, a rotating assembly, an upper gasket, a lower gasket, and one or more heating elements. Each of the process chamber components is used together to allow one or more process gases to flow horizontally across the surface of a substrate. The process chamber components are coupled together to form a process volume in which the substrate is processed, for example, by epitaxial deposition.

[0024] Figures 1A-1B are schematic illustrations of a process chamber assembly 100 according to one or more embodiments described and discussed herein. Figure 1A depicts a process chamber assembly 100 having a substrate support or carrier 121 in a lower or loading position according to one or more embodiments described and discussed herein, while Figure 1B depicts a process chamber assembly 100 having a carrier 121 in an upper or processing position. The process chamber assembly 100 may be an epitaxial deposition chamber and may be used as part of a clustering tool (not shown). The process chamber assembly 100 is used to grow epitaxial films and materials on a substrate (e.g., substrate 150). During epitaxial processes or other processes, the process chamber assembly 100 provides cross-flow of precursors across the entire top surface of substrate 150, while providing cross-flow of purge gases across the entire back or lower surface of carrier 121.

[0025] The process chamber assembly 100 also includes a chamber body 101, which includes a process volume 110, comprising an upper chamber region 111 and a lower chamber region 113. A substrate support assembly 124, at least partially located within the chamber body 101, includes a carrier 121 having a substrate support surface 123 opposite to a back side or lower surface 125 and disposed within the process volume 110. The substrate support assembly 124 is configured to vertically position the carrier 121 between a loading position and a processing position within the processing region. When the carrier 121 is in the processing position, the substrate support surface 123 is located in the upper chamber region 111, and the lower surface 125 is located in the lower chamber region 113.

[0026] The upper chamber region 111 is part of the process volume 110 in which the substrate 150 is processed and process gases are injected during epitaxial processes or other processes. The lower chamber region 113 is part of the process volume 110 in which the substrate 150 is loaded onto the substrate support assembly 124. The upper chamber region 111 may also be the volume above the carrier 121 of the substrate support assembly 124 when the substrate support assembly 124 is in the processing position. The lower chamber region 113 is the volume below the carrier 121 of the substrate support assembly 124 when the substrate support assembly 124 is in the processing position. The processing position (shown in Figures 1B and 2) is a position in which the substrate 150 is set to be flush with or above the horizontal plane 127. The horizontal plane 127 is a plane through which the injection ring 116 and the base ring 114 contact each other. A gap 250 (shown in Figures 1B and 2) is provided around the carrier 121 in the periphery and radial direction. The gap 250 is provided between the carrier 121 and the inner surface of the side wall of the chamber body 101.

[0027] The process chamber assembly 100 includes an upper lamp module 102, a lower lamp module 104, a chamber body assembly 106, a substrate support assembly 124, a lower window 120, and an upper window 122. The substrate support assembly 124 includes a shaft 119 coupled to a carrier 121 having a substrate support surface 123. The substrate support assembly 124 is at least partially disposed between the substrate support assembly 124 and the lower lamp module 104. The lower window 120 is disposed between the substrate support assembly 124 and the lower lamp module 104. The upper window 122 is disposed between the substrate support assembly 124 and the upper lamp module 102.

[0028] The upper lamp module 102 is disposed above the substrate support assembly 124 and configured to heat a substrate (e.g., substrate 150) disposed on the substrate support assembly 124. The upper lamp module 102 includes an upper module body 126 and a plurality of lamp holes 128 disposed through the upper module body 126. Each of the plurality of lamp holes 128 includes a lamp 130 disposed therein. Each of the lamps 130 is coupled to a lamp base 129. Each of the lamp bases 129 supports one of the lamps 130 and electrically couples each of the lamps 130 to a power source (not shown). Each of the lamps 129 is fixed in the hole 128 with a generally vertical orientation. As described herein, the generally vertical orientation of the lamps 130 is approximately perpendicular to the substrate support surface 123 of the substrate support assembly 124. The vertical orientation of lamp 130 is not necessarily perpendicular to the substrate support surface 123. It can also be at an angle of about 30 degrees to about 150 degrees relative to the substrate support surface 123, for example, at an angle of about 45 degrees to about 135 degrees relative to the substrate support surface 123, or at an angle of about 70 degrees to about 110 degrees relative to the substrate support surface 123.

[0029] The upper lamp module 102 further includes a heating gas passage 136 and a pyrometer passage 138. A heating gas supply source 132 is fluidly coupled to the heating gas passage 136. The heating gas passage 136 extends from the top surface of the upper module body 126 to the bottom surface. The heating gas passage 136 is configured to allow heating gas (e.g., heated air or heated inert gas) to flow from the heating gas supply source 132 to the top surface of the upper window 122 to convectively heat the upper window 122. Heating gas is supplied to an upper inflation chamber 180 defined between the upper lamp module 102 and the upper window 122. A heating gas exhaust passage 142 is also provided through the upper module body 126. The heating gas exhaust passage 142 is coupled to a heating exhaust pump 140. The heating exhaust pump 140 removes gas from the upper inflation chamber 180. The heating exhaust pump 140 can also serve as an exhaust pump for the process volume. In some embodiments, the heating gas exhaust channel 142 may be a groove formed along the edge of the upper module body 126, or may be formed by a separate component in fluid communication with the upper inflation chamber 180.

[0030] A pyrometer channel 138 is provided through the upper module body 126 to enable a pyrometer 134 (e.g., a scanning pyrometer) to measure the temperature of the substrate 150. The pyrometer 134 is disposed on the top of the upper module body 126 adjacent to the pyrometer channel 138. The pyrometer channel 138 extends from the top surface of the upper module body 126 to the bottom surface adjacent to the upper window 122.

[0031] The lower lamp module 104 is disposed below the substrate support assembly 124 and configured to heat the bottom side of the substrate 150 disposed on the substrate support assembly 124. The lower lamp module 104 includes a lower module body 182 and a plurality of lamp holes 186 disposed through the lower module body 182. Each of the plurality of lamp holes 186 includes a lamp 188 disposed therein. Each of the lamps 188 is oriented in a generally vertical direction and coupled to a lamp base 184. Each of the lamp bases 184 supports one of the lamps 188 and electrically couples each of the lamps 188 to a power source (not shown). As described herein, the generally vertical orientation of the lamps 188 is described with respect to the substrate support surface 123 of the substrate support assembly 124. The generally vertical orientation is not necessarily perpendicular to the substrate support surface 123. It can also be at an angle of about 30 degrees to about 150 degrees relative to the substrate support surface 123, for example, at an angle of about 45 degrees to about 135 degrees relative to the substrate support surface 123, or at an angle of about 70 degrees to about 110 degrees relative to the substrate support surface 123.

[0032] The lower lamp module 104 further includes a carrier shaft channel 195 and a pyrometer channel 192. The carrier shaft channel 195 is disposed through the middle of the lower module body 182. The carrier shaft channel 195 is configured to allow the support shaft 904 of the substrate support assembly 124 and a portion of the lower window 120 to pass through the lower module body 182.

[0033] Referring again to Figures 1A-1B, the pyrometer channel 192 is disposed through the lower module body 182 so that the pyrometer 190 (e.g., a scanning pyrometer) can measure the temperature of the bottom surface of the substrate 150 or the bottom surface of the carrier 121. The pyrometer 190 is disposed below the lower module body 182 adjacent to the pyrometer channel 192. The pyrometer channel 192 extends from the bottom surface of the lower module body 182 to the top surface of the lower module body 182 adjacent to the lower window 120.

[0034] The chamber body assembly 106 includes an injection ring 116 and a base ring 114. The injection ring 116 is disposed on top of the base ring 114. The injection ring 116 includes one or more gas injectors 108 disposed therethrough. The base ring 114 includes a substrate transfer channel 162, one or more upper chamber exhaust channels 426 (FIGs 2 and 4E), and a lower chamber exhaust channel 164 disposed therethrough. The substrate transfer channel 162 is disposed opposite to the one or more upper chamber exhaust channels 426 and the lower chamber exhaust channel 164. Each of the one or more upper chamber exhaust channels 426 is coupled to an exhaust module 422.

[0035] The one or more upper chamber exhaust passages 426 and lower chamber exhaust passages 164 are coupled to one or more exhaust pumps (not shown). The one or more exhaust pumps are configured to remove exhaust gas from the process volume 110 via the one or more upper chamber exhaust passages 426 and lower chamber exhaust passages 164. In some embodiments, each of the upper chamber exhaust passages 426 and lower chamber exhaust passages 164 is coupled to a single exhaust pump using a plurality of conduits. In other embodiments, the upper chamber exhaust passage 426 is coupled to a different exhaust pump than the lower chamber exhaust passage 164.

[0036] A substrate transfer channel 162 is formed via a base ring 114 and is configured to allow a substrate to pass through the transfer chamber of a clustering tool (not shown). A flange 168 is attached to one end of the base ring 114 to enable attachment of the process chamber assembly 100 to the clustering tool (not shown). The substrate transfer channel 162 is via the flange 168.

[0037] An upper cooling ring 118 and a lower cooling ring 112 are disposed on opposite sides of the chamber body assembly 106. The upper cooling ring 118 is disposed on top of the jet ring 116. In one or more embodiments, the upper cooling ring 118 is configured as a cooling clamp (not shown) that clamps or otherwise secures a flange portion of a dome (e.g., lower window 120) to the chamber body 101 for vacuum sealing. In other embodiments, the upper cooling ring 118 is configured to cool the jet ring 116. The lower cooling ring 112 is disposed below the base ring 114 and is configured to cool the base ring 114. The upper cooling ring 118 includes a coolant passage 146 disposed therethrough. In some embodiments, the coolant circulated through the coolant passage 146 may include water or oil. The lower cooling ring 112 includes a coolant passage 148 disposed therethrough. The coolant circulating through coolant channel 148 is similar to the coolant circulating through coolant channel 146 of upper cooling ring 118. In some embodiments, upper cooling ring 118 and lower cooling ring 112 help to hold spray ring 116 and base ring 114 in place. Upper cooling ring 118 may partially support upper lamp module 102, while lower cooling ring 112 may partially support base ring 114 and spray ring 116.

[0038] The use of the upper cooling ring 118 and the lower cooling ring 112 reduces the temperature of the spray ring 116 and the base ring 114 without the need for additional cooling channels to be provided through the spray ring 116 and the base ring 114 as in conventional rings. This reduces the cost of manufacturing the spray ring 116 and the base ring 114 because they are replaced more frequently than the upper cooling ring 118 and the lower cooling ring 112. In some embodiments, the spray ring 116 may have an additional coolant channel 521 disposed therethrough (FIG. 5A).

[0039] The one or more gas injectors 108 of the injection ring 116 are disposed through one or more openings within the injection ring 116. In the embodiments described herein, there are a plurality of gas injectors 108 disposed through the injection ring 116. The one or more gas injectors 108 are configured to supply process gas to the process volume 110 via one or more gas outlets 178. Figures 1A-1B show a single gas injector among the one or more gas injectors 108. The gas injector 108 is shown configured such that the one or more gas outlets 178 point downward toward the substrate support assembly 124 and the substrate 150. The downward angle of the gas injector 108 may be an angle greater than or about 5 degrees relative to the horizontal plane, for example, greater than or about 10 degrees relative to the horizontal plane. Each of the one or more gas outlets 178 is fluidly coupled to one or more process gas supply sources (e.g., a first process gas supply source 174 or a second process gas supply source 176). In some embodiments, only the first process gas supply source 174 is utilized. In other embodiments, both a first process gas supply source 174 and a second process gas supply source 176 are utilized, and each gas injector 108 has two gas outlets 178. The two gas outlets 178 are arranged in a stacked manner, such that the gases can only be mixed after they have entered the process volume 110. In some embodiments, the first process gas supply source 174 is a process gas, and the second process gas supply source 176 is a cleaning gas. In other embodiments, both the first process gas supply source 174 and the second process gas supply source 176 are process gases.

[0040] An upper window 122 is disposed between the jet ring 116 and the upper lamp module 102. The upper window 122 is an optically transparent window, allowing radiant energy generated by the upper lamp module 102 to pass through it. In some embodiments, the upper window 122 is formed of quartz or glass. The upper window 122 is dome-shaped and is described as an upper dome in some embodiments. A peripheral support 172 is formed at the outer edge of the upper window 122. The peripheral support 172 is thicker than the central portion of the upper window 122. The peripheral support 172 is disposed on the top of the jet ring 116. The peripheral support 172 is connected to the central portion of the upper window 122 and is formed of an optically transparent material of the central portion of the upper window 122.

[0041] A lower window 120 is disposed between the base ring 114 and the lower lamp module 104. The lower window 120 is an optically transparent window, allowing radiant energy generated by the lower lamp module 104 to pass through it. In some embodiments, the lower window 120 is formed of quartz or glass. The lower window 120 is dome-shaped and is described in some embodiments as a lower dome. A peripheral support 170 is formed at the outer edge of the lower window 120. The peripheral support 170 is thicker than the central portion of the lower window 120. The peripheral support 170 is connected to the central portion of the lower window 120 and is formed of the same optically transparent material.

[0042] Various gaskets and heaters are disposed inside the chamber main assembly 106 and within the process volume 110. As shown in Figures 1A and 1B, there are upper gaskets 156 and lower gaskets 154 disposed within the chamber main assembly 106. The upper gasket 156 is disposed above the lower gasket 154 and inside the injection ring 116. The lower gasket 154 is disposed inside the base ring 114. The upper gasket 154 and the lower gasket 154 are configured to be coupled together when located within the process volume. The upper gasket 156 and the lower gasket 154 are configured to shield the inner surfaces of the injection ring 116 and the base ring 114 from the process gases within the process volume. The upper gasket 156 and the lower gasket 154 further reduce heat loss from the process volume to the injection ring 116 and the base ring 114. Reducing heat loss improves the heating uniformity of substrate 150 and enables more uniform deposition on substrate 150 during epitaxial or other processes.

[0043] An upper heater 158 and a lower heater 152 are also disposed within the chamber body assembly 106 and the process volume 110. As shown in Figures 1A-1B, the upper heater 158 is disposed between the upper liner 156 and the jet ring 116, while the lower heater 152 is disposed between the lower liner 154 and the base ring 114. Both the upper heater 158 and the lower heater 152 are disposed inside the chamber body assembly 106 to enable more uniform heating of the substrate 150 when the substrate 150 is located within the process chamber assembly 100. The upper heater 158 and the lower heater 152 reduce heat loss to the walls of the chamber body assembly 106 and generate a more uniform temperature distribution around the surface forming the process volume 110. Each of the upper liner 156, the lower liner 154, the upper heater 158, and the lower heater 152 is coupled to a flange 160 disposed within the process volume 110. Flange 160 is a horizontal surface configured to be fixed between a portion of the injection ring 116 and the base ring 114, thereby enabling the fixation of each of the upper gasket 156, lower gasket 154, upper heater 158, and lower heater 152. In the embodiments described herein, both the upper heater 158 and the lower heater 152 may be configured to have a heating fluid flowing therethrough, or may be resistance heaters. The shapes of the upper heater 158 and the lower heater 152 are further adjusted to accommodate openings through the injection ring 116 and the base ring 114.

[0044] A substrate support assembly 124 is disposed within the process volume 110 and configured to support the substrate 150 during epitaxial processes or other processes. The substrate support assembly 124 includes a flat upper surface for supporting the substrate 150 and a shaft 119 extending through a lower window 120 and a portion of the lower lamp module 104. The substrate support assembly 124 is coupled to a moving assembly 194 via the shaft 119. The moving assembly 194 includes a rotating assembly 196 and a lifting assembly 198. The rotating assembly 196 is configured to rotate the substrate support assembly 124 about a central axis A, while the lifting assembly 198 is configured to linearly move the substrate support assembly 124 along the central axis A within the process volume 110.

[0045] FIG. 2A illustrates a schematic diagram of gas flow paths within an upper chamber region 111 and a lower chamber region 113 of a process volume 110 within a process chamber assembly 100, according to one or more embodiments described and discussed herein. The process chamber assembly 100 includes a first gas system 220 in the upper chamber region 111 and a second gas system 230 in the lower chamber region 113. The first gas system 220 includes an upper gas inlet 210 on a first side 201 of the chamber body 101 and an upper gas outlet 212 on a second side 202 of the chamber body 101, the second side 202 being opposite to the first side 201. The second gas system 230 includes a lower gas inlet 214 on the first side 201 of the chamber body 101 and a lower gas outlet 216 on the second side 202 of the chamber body 101.

[0046] The process chamber assembly 100 further includes a gap 250 disposed peripherally and radially around the carrier 121, as depicted in Figures 1B and 2A-2C. The gap 250 is located between the upper chamber region 111 and the lower chamber region 113, which are in fluid communication with each other through the gap 250. The gap 250 is disposed between the carrier 121 and one or more inner surfaces of or within the chamber body 101. In some embodiments, the gap 250 is disposed between the carrier 121 and the lower liner 154, as shown in Figure 1B. In other embodiments, the gap 250 is disposed between the carrier 121 and the nearest inner surface of the chamber body 101, as shown in Figure 2A.

[0047] In one or more embodiments, a gap 250 is disposed between the carrier 121 and the preheating ring (PHR) 117, as shown in Figures 2B and 2C. As depicted in Figure 2B, the gap 250 is disposed between the outer edge surface 119B of the carrier 121 and the PHR 117. As depicted in Figure 2C, the carrier 121 includes a protrusion 119C that extends radially outward and overlaps below the PHR 117. The overlap between the protrusion 119C and the PHR 117 provides a gap 252, which is in fluid communication with the gap 250. The combination of gaps 250 and 252 is in fluid communication with and between the upper chamber region 111 and the lower chamber region 113, and reduces gas conductivity between the upper chamber region 111 and the lower chamber region 113.

[0048] Gap 250 provides space for carrier 121 to rotate around the fixed chamber body 101 and / or PHR 117. In one or more embodiments, PHR 117 is made of or otherwise contains one or more materials that absorb radiant heat (e.g., radiant heat from a lamp) and serve as a preheating mechanism for the process gas 204 entering the upper chamber region 111 forming the injector 210. The process gas 204 can be heated to an elevated and desired temperature before being delivered to substrate 150. Exemplary materials for PHR 117 may be or include graphite, silicon carbide, quartz, silicon carbide-coated graphite, or any combination of the foregoing.

[0049] The distance (d1) from the edge of the carrier 121 to the lower liner 154, the chamber body 101, the PHR 117, or other inner surfaces is the width of the gap 250. The gap 252 may independently have the same or smaller width as the gap 250. The distance (d1), the width of the gap 250, or the width of the gap 252 may independently be from about 0 mm (no gap), about 0.1 mm, about 0.5 mm, about 1 mm, about 1.5 mm, about 2 mm, about 3 mm, or about 4 mm to about 5 mm, about 6 mm, about 7 mm, about 8 mm, about 9 mm, about 10 mm, or about 12 mm. For example, the width of the distance (d1) or gap 250 may be about 0.1 mm to about 12 mm, about 0.1 mm to about 10 mm, about 0.1 mm to about 8 mm, about 0.1 mm to about 6 mm, about 0.1 mm to about 5 mm, about 0.1 mm to about 4 mm, about 0.1 mm to about 3 mm, about 0.1 mm to about 2 mm, about 0.1 mm to about 1 mm, about 1 mm to about 12 mm, about 1 mm to about 10 mm, about 1 mm to about 8 mm, about 1 mm to about 6 mm, about 1 mm to about 5 mm, about 1 mm to about 4 mm, about 1 mm to about 3 mm, about 1 mm to about 2 mm, about 1 mm to about 1.5 mm, about 2 mm to about 12 mm, about 2 mm to about 10 mm, about 2 mm to about 8 mm, about 2 mm to about 6 mm, about 2 mm to about 5 mm, about 2 mm to about 4 mm, or about 2 mm to about 3 mm.

[0050] In one or more embodiments, a method is provided for epitaxially depositing a material (e.g., silicon, germanium, silicon-germanium) on a substrate 150, the method comprising the steps of: placing the substrate 150 on a substrate support surface 123 of a carrier 121 within a process volume 110 of a chamber body 101 during an epitaxial process or other process. During the epitaxial process, the substrate support surface 123 is located in an upper chamber region 111, and the lower surface 125 of the carrier 121 is located in a lower chamber region 113, as depicted in Figures 1B and 2. During the epitaxial process, one or more process gases 204 (indicated by dashed arrows) flow through the substrate 150 from one or more upper gas inlets 210 fluidly coupled to a gas injector 108 on a first side 201 of the chamber body 101, and flow to one or more upper gas outlets 212 fluidly coupled to an upper chamber exhaust passage 426 on a second side 202 of the chamber body 101. Each process gas may be or contain one or more chemical precursors, such as silicon precursors, germanium precursors, carbon precursors, doped precursors, one or more carrier gases, or any combination thereof. For example, a silicon precursor may be or contain silane, disilane, trisilane, or higher silanes (HOS), such as tetrasilane, neopentyl silane, chlorosilane, dichlorosilane (DCS), tetrachlorosilane (TCS), hexachlorodisilane, or any combination thereof. A carrier gas may be or contain nitrogen (N2), argon, helium, hydrogen (H2), or any combination thereof.

[0051] During the epitaxial process, one or more purge gases 208 (indicated by arrows) flow from one or more lower gas inlets 214 fluidly coupled to the substrate transfer channel 162 on the first side 201 of the chamber body 101, across the lower surface 125 of the carrier 121, and flow to one or more lower gas outlets 216 fluidly coupled to the lower chamber exhaust channel 164 on the second side 202 of the chamber body 101. The purge gas 208 may be or contain nitrogen (N2), argon, helium, hydrogen (H2), or any combination thereof.

[0052] In one or more embodiments, during the epitaxial process, the process gas 204 in the upper chamber region 111 and the purge gas 208 in the lower chamber region 113 flow simultaneously. During the epitaxial process, the pressure in the lower chamber region 113 is maintained and / or controlled to be greater than the pressure in the upper chamber region 111. The pressure in the lower chamber region 113 is maintained at approximately 0.5%, approximately 0.8%, approximately 1%, approximately 1.5%, approximately 2%, or approximately 2.5% higher than the pressure in the upper chamber region 111, up to approximately 3%, approximately 4%, approximately 5%, approximately 6%, approximately 7%, approximately 8%, approximately 9%, or approximately 10%. For example, the pressure in the lower chamber region 113 is maintained at approximately 0.5% to approximately 10%, approximately 0.5% to approximately 8%, approximately 0.5% to approximately 6%, approximately 0.5% to approximately 5%, approximately 0.5% to approximately 4%, approximately 0.5% to approximately 3%, approximately 0.5% to approximately 2%, or approximately 0.5% to approximately 1% higher than the pressure in the upper chamber region 111. In other examples, the pressure in the lower chamber region 113 is maintained at approximately 1% to approximately 5%, approximately 1% to approximately 4%, approximately 1% to approximately 3%, or approximately 1% to approximately 2% higher than the pressure in the upper chamber region 111.

[0053] The pressure in the upper chamber region 111 and the pressure in the lower chamber region 113 may independently be about 1 tor, about 3 tor, about 5 tor, about 6 tor, about 7 tor, about 8 tor, about 9 tor or about 10 tor, to about 12 tor, about 14 tor, about 15 tor, about 18 tor, about 20 tor, about 22 tor, about 25 tor, about 28 tor or about 30 tor. For example, the pressure in the upper chamber region 111 and the pressure in the lower chamber region 113 may independently be about 1 to about 30 to, about 2 to about 30 to, about 5 to about 30 to, about 5 to about 25 to, about 5 to about 20 to, about 5 to about 18 to, about 5 to about 15 to, about 5 to about 12 to, about 5 to about 10 to, about 5 to about 8 to, about 10 to about 25 to, about 10 to about 20 to, about 10 to about 18 to, about 10 to about 15 to, or about 10 to about 12 to.

[0054] In other embodiments, each of the pressure in the upper chamber region 111 and the pressure in the lower chamber region 113 may independently have other pressures, including atmospheric pressure (about 760 Torr) and greater. In some examples, the methods described and discussed herein can be utilized during atmospheric epitaxial processes in which the lower chamber region 113 is maintained at a pressure greater than that in the upper chamber region 111. In such embodiments, each of the pressure in the upper chamber region 111 and the pressure in the lower chamber region 113 may independently be about 10 Torr, about 20 Torr, about 50 Torr, about 80 Torr, about 100 Torr, about 120 Torr, or about 150 Torr to about 200 Torr, about 250 Torr, about 300 Torr, about 400 Torr, about 500 Torr, about 600 Torr, about 700 Torr, about 720 Torr, about 750 Torr, about 760 Torr, about 770 Torr, about 780 Torr or greater. For example, the pressure in the upper chamber region 111 and the pressure in the lower chamber region 113 can each independently be approximately 50 to approximately 780 tors, approximately 100 to approximately 780 tors, approximately 150 to approximately 780 tors, approximately 200 to approximately 780 tors, approximately 300 to approximately 780 tors, approximately 400 to approximately 780 tors, approximately 500 to approximately 780 tors, approximately 600 to approximately 780 tors, approximately 700 to approximately 780 tors, approximately 50 to approximately 760 tors, approximately 100 to approximately 760 tors, or approximately 150 to approximately 760 tors. Approximately 200 to approximately 760 tonnages, approximately 300 to approximately 760 tonnages, approximately 400 to approximately 760 tonnages, approximately 500 to approximately 760 tonnages, approximately 600 to approximately 760 tonnages, approximately 700 to approximately 760 tonnages, approximately 50 to approximately 740 tonnages, approximately 100 to approximately 740 tonnages, approximately 150 to approximately 740 tonnages, approximately 200 to approximately 740 tonnages, approximately 300 to approximately 740 tonnages, approximately 400 to approximately 740 tonnages, approximately 500 to approximately 740 tonnages, approximately 600 to approximately 740 tonnages, or approximately 700 to approximately 740 tonnages.

[0055] In some embodiments, a cleaning process is performed within the process chamber 100 after the deposition or epitaxial process. The cleaning process may include the step of exposing the inner surfaces of the upper chamber region 111 and / or the lower chamber region 113 to one or more etchant gases or cleaning gases. The etchant gas or cleaning gas may be or include hydrogen chloride (HCl), chlorine (Cl2), fluorine (F2), nitrogen fluoride (NF3), one or more carrier gases (e.g., nitrogen, argon, or helium), or any combination of the foregoing. During the cleaning process, the etchant gas may flow from the upper chamber region 111 to the lower chamber region 113 to clean or remove any contaminants therein. The methods described and discussed herein can be used to adjust the pressure and flow rate of the etchant on the inner surfaces of the upper chamber region 111 and / or the lower chamber region 113 during the cleaning process.

[0056] In one or more embodiments, during the epitaxial process, the pressure in the lower chamber region 113 is maintained at a value greater than the pressure in the upper chamber region 111 by increasing the exhaust rate of the process gas 204 through the upper gas outlet 212. In other embodiments, during the epitaxial process, the pressure in the lower chamber region 113 is maintained at a value greater than the pressure in the upper chamber region 111 by decreasing the exhaust rate of the purge gas 208 through the lower gas outlet 216. In some embodiments, during the epitaxial process, the pressure in the lower chamber region 113 is maintained at a value greater than the pressure in the upper chamber region 111 by increasing the flow rate of the purge gas 208 through the lower gas inlet 214. By maintaining a pressure in the lower chamber region 113 greater than the pressure in the upper chamber region 111, gas diffusion between the upper chamber region 111 and the lower chamber region 113 is minimized, reduced, or eliminated. This minimization, reduction, and / or elimination of gas diffusion between the upper chamber region 111 and the lower chamber region 113 is advantageous because it provides controlled and ideal conditions for epitaxial deposition on the substrate 150 in the upper chamber region 111, while also reducing or preventing contaminants from appearing in the lower chamber region 113, particularly on the back side or lower surface 125 of the carrier 121.

[0057] Continuing to refer to FIG2A, the process chamber assembly 100 includes a control unit 240 for controlling and / or maintaining the pressure in the upper chamber region 111 and the lower chamber region 113. The control unit 240 may be configured to independently maintain each of the pressures in the lower chamber region 113 and the upper chamber region 111 at a specified or desired pressure. For example, the control unit 240 may be configured to maintain the pressure in the lower chamber region 113 greater than the pressure in the upper chamber region 111.

[0058] In some embodiments, the process chamber assembly 100 includes gas sources 222 and 232, and exhaust or pump sources 226 and 236. Each of the gas sources 222 and 232 may independently be any other gas source described and discussed herein. For example, gas source 222 may be or include a first process gas supply source 174, a second process gas supply source 176, and / or other gas sources. Gas source 232 may be or include gas flowing or otherwise introduced into the substrate transport channel 162. Gas source 222 supplies one or more of the process gases 204 to the upper chamber region 111, and gas source 232 supplies one or more of the purge gases 208 to the lower chamber region 113.

[0059] Each of the exhaust sources or pump sources 226 and 236 may independently be any other exhaust source or pump source described and discussed herein. For example, pump source 226 may be fluidly coupled to the upper gas outlet 212, the upper chamber exhaust passage 426, the exhaust module passage 428, the exhaust outlet 430, and / or other exhaust outlets. Pump source 236 may be fluidly coupled to the lower gas outlet 216, the lower chamber exhaust passage 164, and / or other exhaust outlets. Pump source 226 removes process gas 204 from the upper chamber region 111, and pump source 236 removes purge gas 208 from the lower chamber region 113.

[0060] Flow control devices 224 and 228 (e.g., valves (e.g., variable conduction valves), flow limiters, and other devices for controlling gas flow) can be used to control the flow rate or movement of process gas 204 within the upper or first gas system 220. One or more flow control devices 224 can control the introduction and flow rate of process gas 204 from gas source 222 through gas injector 108 and upper gas inlet 210 into upper chamber region 111. One or more flow control devices 228 can control the removal and flow rate of process gas 204 from upper chamber region 111 through upper gas outlet 212, upper chamber exhaust passage 426, exhaust module passage 428, exhaust outlet 430 into exhaust source or pump source 226. In one or more examples, flow control device 228 is or includes one or more flow limiters, such as a conduit with a reduced diameter downstream of upper chamber region 111. In some configurations, control unit 240 can be used to control or otherwise operate flow control devices 224 and / or 228.

[0061] Flow control devices 234 and 238 (e.g., valves (e.g., variable transmission valves), flow limiters, and other devices for controlling gas flow) can be used to control the flow rate or movement of purified gas 208 within the lower or second gas system 230. One or more flow control devices 234 can control the introduction and flow rate of purified gas 208 from gas source 232 through substrate transfer channel 162 and lower gas inlet 214 into lower chamber region 113. One or more flow control devices 238 can control the removal and flow rate of purified gas 208 from lower chamber region 113 through lower gas outlet 216, lower chamber exhaust channel 164, and into exhaust source or pump source 236. In one or more examples, flow control device 238 is or includes one or more flow limiters, such as a conduit with a reduced diameter downstream of lower chamber region 113. In some configurations, control unit 240 can be used to control or otherwise operate flow control devices 234 and / or 238.

[0062] In one or more examples, a method for epitaxially depositing material on a substrate 150 is provided, the method comprising the steps of: during an epitaxial process, causing a process gas 204 containing at least a silicon precursor to flow from an upper gas inlet 210 on a first side 201 of a chamber body 101 across the substrate 150 and to an upper gas outlet 212 on a second side 202 of the chamber body 101, while simultaneously causing a purge gas 208 to flow from a lower gas inlet 214 on the first side 201 of the chamber body 101 across a lower surface 125 of a carrier 121 and to a lower gas outlet 216 on the second side 202 of the chamber body 101. The method further comprises the step of: during the epitaxial process, maintaining the pressure in the lower chamber region 113 at a value that is approximately 1% to approximately 5% higher than the pressure in the upper chamber region 111. The pressure in the lower chamber region 113 can be maintained, adjusted, or controlled to be greater than the pressure in the upper chamber region 111 by one or more of the following operations: increasing the exhaust rate of the process gas 204 through the upper gas outlet 212, decreasing the exhaust rate of the purge gas 208 through the lower gas outlet 216, and / or increasing the flow rate of the purge gas 208 through the lower gas inlet 214.

[0063] In one or more embodiments, the process chamber assembly 100 includes an upper lamp module 102 and a lower lamp module 104, and a carrier 121 is disposed between the upper lamp module 102 and the lower lamp module 104. The process chamber assembly 100 includes an upper window 122 disposed between the upper lamp module 102 and the carrier 121, and a lower window 120 disposed between the lower lamp module 104 and the carrier 121. The process chamber assembly 100 also includes a base ring 114 disposed between the upper lamp module 102 and the lower lamp module 104. The base ring 114 includes: a base ring body having an inner base ring surface and an outer base ring surface; a substrate transfer channel 208 disposed through the inner base ring surface and the outer base ring surface; a lower chamber exhaust channel 164 disposed opposite to the substrate transfer channel 208 and disposed through an inner surface and an outer surface; and one or more upper chamber exhaust channels 426. In some configurations, the substrate transfer channel 208 includes a lower gas inlet 214 on a first side 201 of the chamber body 101, and the lower chamber exhaust channel 164 includes a lower gas outlet 216 on a second side 202 of the chamber body 101.

[0064] In some embodiments, the process chamber assembly 100 also includes an injection ring 116 disposed on top of the base ring 114 and between the upper lamp module 102 and the lower lamp module 104. The injection ring 116 includes: an injection ring body 502 having an inner injection ring surface and an outer injection ring surface; and one or more injector channels 108 disposed between the inner and outer injection ring surfaces and above the substrate transfer channel 208. The one or more injector channels 108 include an upper gas inlet 210 on a first side 201 of the chamber body 101, and the one or more upper chamber exhaust channels 426 include an upper gas outlet 212 on a second side 202 of the chamber body 101.

[0065] Figure 3 illustrates a schematic diagram of the gas flow paths within the upper chamber region 111 and lower chamber region 113 of the process volume 110 within the process chamber assembly 100, according to one or more embodiments described and discussed herein. Figure 3 depicts the process gas 204 and the purge gas 208 throughout the process chamber assembly 100, but does not illustrate the actual components of the process chamber assembly 100. For specific components of the process chamber assembly 100, please refer to Figures 1A-2 and 4A-5B. The process gas 204 is labeled as process gases 204a-204e in different portions or segments of the first gas system 220, and the purge gas 208 is labeled as purge gases 208a-208c in different portions or segments of the second gas system 230. Process gases 204a-204e exhibit the geometry of the internal space within the first gas system 220, and purification gases 208a-208c exhibit the geometry of the internal space within the second gas system 230.

[0066] In one or more examples, the process gas 204 is contained within one or more gas injectors 108 as process gas 204a; contained within the upper chamber region 111 as process gas 204b; contained within the upper chamber exhaust passage 426 as process gas 204c; contained within the exhaust module passage 428 as process gas 204d; and contained within the exhaust outlet 430 as process gas 204e. In other examples, the purge gas 208 is contained within the substrate transport passage 162 and / or within injectors (not shown) disposed on and provided therein and / or other portions of the chamber body 101 as purge gas 208a; contained within the lower chamber region 113 as purge gas 208b; and contained within the lower chamber exhaust passage 164 as purge gas 208c.

[0067] FIG4A is a schematic cross-sectional perspective view of a chamber body assembly 106 according to one or more embodiments described and discussed herein. The chamber body 106 includes an injection ring 116 disposed on and coupled to a base ring 114. The injection ring 116 includes the one or more gas injectors 108. The injection ring 116 includes an inner surface 504, and the base ring 114 includes an inner surface 404. The inner surfaces 404, 504 of both the base ring 114 and the injection ring 116 are aligned with each other such that the inner surfaces 404, 504 have the same diameter for at least a portion of the circumference of the base ring 114 and the injection ring 116. The inner surfaces 404, 504 of the base ring 114 and the injection ring 116 form a central opening 401. The central opening 401 includes both the opening 410 of the base ring 114 and the opening 510 of the injection ring 116. The top surface 412 of the base ring 114 contacts the bottom surface 524 of the spray ring 116.

[0068] One or more gas injectors 108 are disposed on one side of the chamber body assembly 106, while one or more upper chamber exhaust passage openings 424 are disposed on the opposite side of the chamber body assembly 106. Each of the one or more upper chamber exhaust passage openings 424 is aligned with a recess 530 formed in the inner surface of the injection ring 116. The alignment of each of the one or more recesses 530 with the upper chamber exhaust passage opening 424 allows the gas injected by the one or more gas injectors 108 to flow through the process volume 110 (FIGs 1A-1B) and over the substrate 150 before being removed from the process volume 110 via the upper chamber exhaust passage opening 424. The recess 530 facilitates the collection of exhaust gas and the downward guidance of exhaust gas from the area flush with the injection ring 116 toward the upper chamber exhaust passage opening 424. Once the exhaust gas enters the upper chamber exhaust passage opening 424, the exhaust gas flows through one or more upper chamber exhaust passages 426 and exits from the exhaust outlet 430.

[0069] The combination of the indentation 530 and the upper chamber exhaust passage opening 424 reduces the complexity of manufacturing the base ring 114 and / or the injection ring 116. The combination of the indentation 530 and the upper chamber exhaust passage opening 424 further allows the process gas to flow horizontally through the process volume 110 and remain in the upper chamber region 111, without flowing downwards into the lower chamber region 113 where it could potentially become a source of contamination.

[0070] FIG4B is a schematic cross-sectional view of the chamber body assembly 106 of FIG4A taken through another plane according to one or more embodiments described and discussed herein. The cross-section shown in FIG4B illustrates the lower chamber exhaust passage 164 and the relationship between the orientation of the lower chamber exhaust passage 164 and at least one of the upper chamber exhaust passage opening 424, recess 530, and upper chamber exhaust passage 426. As described with reference to FIG4D, 4E, and 5B, the recess 530, the upper chamber exhaust passage opening 424, and the upper chamber exhaust passage 426 are arranged at an angle relative to the lower chamber exhaust passage 164. The recess 530 and the upper chamber exhaust passage opening 424 are further disposed above the lower chamber exhaust passage 164. The lower chamber exhaust passage 164 is configured to remove exhaust gas from the lower chamber region 113, while the upper chamber exhaust passage opening 424 is configured to remove exhaust gas from the upper chamber region 111.

[0071] FIG4C is a schematic cross-sectional view of the base ring 114. The base ring 114 includes a base ring body 402 having an opening 410 disposed therethrough. The opening 410 forms at least a portion of the process volume 110 of the entire process chamber assembly 100. The size of the opening 410 is adjusted to allow the substrate and substrate support assembly 124 to be disposed therethrough. The opening 410 is formed by the inner wall 404 of the base ring 114. The opening 410 extends from the top surface 412 of the base ring 114 to the bottom surface 414 of the base ring 114.

[0072] The base ring body 402 is the body of the base ring 114 and is formed of a metallic material, such as steel, aluminum, copper, nickel, or a metal alloy. In some embodiments, the base ring body 402 may be a silicon carbide material or a silicon carbide-doped material.

[0073] As described above, the substrate transfer channel 162 is disposed opposite to the one or more upper chamber exhaust channel openings 424 and lower chamber exhaust channels 164. The substrate transfer channel 162 is disposed through a first side 406 of the base ring 114, while the one or more upper chamber exhaust channel openings 424 and lower chamber exhaust channels 164 are formed through a second side 408 of the base ring 114. The first side 406 of the base ring 114 is disposed on one side of the plane C (FIG. 4E) disposed through the base ring 114, while the second side 408 of the base ring 114 is disposed on the side of the plane C opposite to the first side 406. The plane C passes through the central axis A and is perpendicular to the plane B. The plane C separates the substrate transfer channel 162 from the lower chamber exhaust channels 164 and the upper chamber exhaust channel openings 424. In an embodiment, there are two upper chamber exhaust channel openings 424 (FIG. 4D) formed through the top surface 412 of the base ring 114. The two upper chamber exhaust channel openings 424 are opposite to the substrate transfer channel 162, but offset from its direct opposite direction. These two upper chamber exhaust channel openings 424 are offset to prevent gas from converging inwards as it flows from the gas injector 108 (Figs. 1A-1B) through the process volume 110. Instead, the airflow remains more uniformly distributed throughout the process volume, resulting in more uniform deposition on the substrate 150. These two upper chamber exhaust channel openings 424 are located inside the sealing groove 416.

[0074] The height H1 of the substrate transfer channel 162 is about 7 mm to about 30 mm, for example about 10 mm to about 20 mm, so that the substrate 150 and the transfer arm (not shown) can be disposed therethrough. The substrate transfer channel 162 further has a width W1 (FIG. 4E) of about 305 mm to about 350 mm, for example about 305 mm to about 315 mm. The width W1 allows the substrate 150 to be disposed therethrough on the carrier assembly 124.

[0075] Referring also to Figures 1A-1B, a lower chamber exhaust passage 164 is disposed opposite the substrate transfer passage 162 to allow the lower chamber exhaust passage 164 to be in fluid communication with an exhaust pump (not shown). The exhaust pump may also be coupled and in fluid communication with the two upper chamber exhaust passage openings 424. As described herein, the lower chamber exhaust passage 164 is a cylindrical or elliptical passage. The height H2 of the lower chamber exhaust passage 164 is approximately 0 mm, approximately 1 mm, approximately 5 mm, or approximately 10 mm to approximately 75 mm, for example, approximately 25 mm to approximately 50 mm. The height H2 of the lower chamber exhaust passage 164 is configured to allow sufficient lower chamber airflow to pass through it along with a potential lifting arm assembly (not shown).

[0076] Continuing to refer to FIG4C, the top surface 412 of the base ring body 402 includes a sealing groove 416 disposed therein. The sealing groove 416 surrounds the inner wall 404 and is configured to receive a sealing ring, such as an O-ring or other sealing gasket. The sealing ring disposed within the sealing groove 416 may be a polymer or plastic, with a hardness greater than 50 on the Shore A scale, for example greater than 60, for example greater than or about 65. The sealing groove 416 is sized to receive a sealing ring that forms a seal between the base ring 114 and the injection ring 116, as shown in FIG1A-1B. The sealing groove 416 is disposed radially outside the upper chamber exhaust passage opening 424 to prevent exhaust gas flowing through the upper chamber exhaust passage opening 424 from escaping from the process chamber assembly 100.

[0077] The top surface 412 may optionally include a support step 440. The support step 440 is a recess formed between the top surface 412 and the inner wall 404. The support step 440 is configured to support a flange 160 (Figures 1A-1B). The flange 160 is configured to be at least partially disposed within the support step 440 of the base ring 114 and the injection ring 116 to secure the flange 160 in place.

[0078] The bottom surface 414 of the base ring body 402 includes a first sealing groove 418 and a second sealing groove 420. The first sealing groove 418 and the second sealing groove 420 are concentric and surround the inner wall 404 along the bottom surface 414. Compared with the second sealing groove 420, the first sealing groove 418 is further outward relative to the axis A, such that the first sealing groove 418 surrounds the second sealing groove 420. Each of the first sealing groove 418 and the second sealing groove 420 is configured to receive a sealing ring, such as an O-ring or other sealing gasket. The sealing ring disposed in the first sealing groove 418 and the second sealing groove 420 may be a polymer or plastic with a hardness greater than 50 on the Shore A scale, for example, greater than 60 on the Shore A scale, for example, greater than or about 65 on the Shore A scale. The dimensions of the first sealing groove 418 and the second sealing groove 420 are adjusted to receive the sealing ring and to form a seal between the base ring 114 and the peripheral support 170 of the lower window 120, as shown in Figures 1A-1B.

[0079] FIG4D is a schematic plan view of the base ring 114 of FIG4C. As shown in FIG4D, the top surface 412 includes one or more upper chamber exhaust passage openings 424 disposed therein. The one or more upper chamber exhaust passage openings 424 are disposed between the inner wall 404 and the sealing groove 416. The one or more upper chamber exhaust passage openings 424 are in fluid communication with a portion of the upper gasket 156 and the injection ring 116 to remove process gas from the upper part of the process volume 110. Each of the one or more upper chamber exhaust passage openings 424 is in fluid communication with the exhaust module 422 via an upper chamber exhaust passage 426. The upper chamber exhaust passage 426 is a passage disposed through the base ring body 402 (FIG4E). The upper chamber exhaust passage 426 fluidly couples one of the exhaust modules 422 to one of the upper chamber exhaust passage openings 424. As shown in Figure 4D, there are two exhaust modules 422 attached to the second side 408 of the base ring body 402. Each of the two exhaust modules 422 is positioned on opposite sides of the lower chamber exhaust channel 164, such that each of the exhaust modules 422 is positioned on opposite sides of plane B and is a mirror image of plane B. Plane B passes through the central axis A, the center of the substrate transfer channel 162, and the lower chamber exhaust channel 164 (Figure 4E). Plane B is a vertically oriented plane that divides the base ring 114 in half, such that the base ring 114 is a mirror image of plane B. The same plane B is used when referring to the injection ring shown in Figure 5B.

[0080] Each of the one or more upper chamber exhaust passage openings 424 has a width W2 of about 10 mm to about 220 mm, for example, about 20 mm to about 150 mm. The width W2 of each of the upper chamber exhaust passage openings 424 allows exhaust gas from the process volume 110 to be removed while reducing turbulence in the airflow within the process volume 110.

[0081] Each of the upper chamber exhaust passage openings 424 is positioned relative to plane B between a first exhaust angle α and a second exhaust angle β. The first exhaust angle α is an angle of approximately 5 degrees to approximately 45 degrees relative to plane B, for example, approximately 10 degrees to approximately 30 degrees relative to plane B, or for example, approximately 10 degrees to approximately 25 degrees relative to plane B. The first exhaust angle α is large enough to prevent the upper chamber exhaust passage 426 from intersecting with the lower chamber exhaust passage 164.

[0082] The second exhaust angle β is an angle of approximately 30 degrees to approximately 70 degrees, for example, approximately 35 degrees to approximately 65 degrees, or for example, approximately 45 degrees to approximately 60 degrees. The second exhaust angle β is large enough to capture gas guided through the opening 410 by one or more gas injectors 108 without causing the gas path to substantially bend inward toward plane B. The difference between the first exhaust angle α and the second exhaust angle β is approximately 25 degrees to approximately 60 degrees, for example, approximately 30 degrees to approximately 50 degrees. The difference between the first exhaust angle α and the second exhaust angle β allows the upper chamber exhaust passage opening 424 to be positioned around the desired periphery of the opening 410, such that the difference is the amount by which the upper chamber exhaust passage opening 424 extends around the base ring 114.

[0083] FIG4E is a schematic cross-sectional plan view of the base ring 114 of FIG4C through the cross line 4E-4E. As shown in FIG4E, each of the upper chamber exhaust channels 426 is fluidly connected to an exhaust module channel 428 disposed through each of the exhaust modules 422. The exhaust module channel 428 is in fluid communication with the upper chamber exhaust channel opening 424 via the upper chamber exhaust channel 426. The exhaust module channel 428 narrows as it extends further from the base ring body 402 until it is exposed to an exhaust outlet 430. The exhaust outlet 430 is an opening formed by the wall of the exhaust module channel 428 and is configured to be coupled to an exhaust duct (not shown) for removing exhaust gas from the process chamber assembly 100. Similar to the upper chamber exhaust channel opening 424, the upper chamber exhaust channel 426 is disposed relative to plane B between a first exhaust angle α and a second exhaust angle β.

[0084] FIG. 5A is a schematic cross-sectional view of the injection ring 116 according to one or more embodiments described and discussed herein. The injection ring 116 is configured to be located on top of the base ring 114 and to supply process gas to the process volume 110. The injection ring 116 is a component separate from the base ring 114. The injection ring 116 is configured to spray gas across the surface of the substrate such that the main airflow through the process volume 110 is in the horizontal direction. The separable injection ring 116 allows for easy replacement and maintenance of the injection ring 116 without the need to replace or remove the entire chamber body assembly 106. This reduces replacement costs and makes it easier to implement new gas injection improvements with minimal impact on other chamber components along with the process chamber assembly 100.

[0085] The injection ring 116 includes an inner surface 504 and an outer surface 506. The inner surface 504 forms a ring around an opening 510 disposed within the injection ring 116. The opening 510 forms at least a portion of the process volume 110 of the process chamber assembly 100. The injection ring 116 includes one or more gas injectors 108 disposed therein. The one or more gas injectors 108 extend from an injector support surface 514 through the injection ring body 502 to the inner surface 504. The one or more gas injectors 108 described herein are disposed through one or more injector channels 508. Each of the injector channels 508 is sized to receive one of the one or more gas injectors 108, for example, one of the gas injectors 108. The injector channel 508 extends from the injector support surface 514 to the inner surface 504. As the injector channel 508 moves from the injector support surface 514 to the inner surface 504, the injector channel 508 extends downward. Downward extension is defined as the ejector channel 508 moving further away from the top surface 518 of the ejector ring 116 and closer to the bottom surface 524 of the ejector ring 116 as the ejector channel 508 moves radially inward toward the inner surface 504.

[0086] The inner surface 504 includes a groove 536, which is disposed around a large portion of the periphery of the inner surface 504, for example, greater than 50% of the periphery of the inner surface 504, for example, greater than 60% of the periphery of the inner surface 504, for example, greater than 70% of the periphery of the inner surface 504. The groove 536 is configured to receive a heating element, such as an upper heating element 158. The groove 536 is shown in FIG. 5A as part of the inner surface 504 and the bottom surface 524 of the injection ring 116. The inner surface 504 also includes two recesses 530 disposed therein. The two recesses 530 are disposed opposite to the injector channel 508. The recesses 530 are disposed within the recesses 536 and extend deeper into the injection ring body 502 than the grooves 536, such that the recesses 530 extend further away from the axis A than the grooves 536.

[0087] The injector support surface 514 is part of the outer surface 506 of the injection ring body 502 and also has an outer stepped surface 516. The injector support surface 514 is configured to secure the one or more gas injectors 108 in place by providing a surface for anchoring a portion of the one or more gas injectors 108. The one or more gas outlets 178 are provided through the inner surface 504 and slope downward toward the substrate 150 disposed within the process volume 110 (FIGs 1A-1B).

[0088] The bottom surface 524 of the injection ring 116 is configured to contact the top surface 412 of the base ring 114. The bottom surface 524 is a flat surface extending between the outer surface 506 and the inner surface 504. An outer stepped surface 516 extends from the outermost portion of the outer surface 506 to the distal end of the bottom of the injector support surface 514. The injector support surface 506 extends from the outer stepped surface 516 away from the bottom surface 524. The injector support surface 514 is set at an angle relative to the bottom surface 524. The angle of the injector support surface 514 depends at least in part on the injector passage 508 and the desired downward angle of the one or more gas injectors 108. In the embodiments described herein, the angle of the injector support surface 514 relative to the bottom surface 524 is greater than or about 45 degrees, for example about 45 degrees to about 85 degrees, for example about 60 degrees to about 80 degrees, for example about 70 degrees to about 80 degrees. The injector support surface 514 extends radially inward from the outer stepped surface 516, such that the far end of the injector support surface 514 furthest from the outer stepped surface 516 is closer to the inner surface 504.

[0089] The top surface 518 of the injection ring 116 extends radially inward from the upper distal end of the injector support surface 514. The top surface 518 is a horizontal surface, such that it extends parallel to the bottom surface 524. The distal end of the top surface 518 opposite to the injector support surface 514 is attached to a window support groove 512. The window support groove 512 is a channel disposed along the upper surface of the injection ring 116. The window support groove 512 is configured to receive a peripheral support 172 of the upper window 122 therein. The window support groove 512 includes a first window sealing recess 520 and a second window sealing recess 522. Each of the first window sealing recess 520 and the second window sealing recess 522 is configured to receive a sealing ring, such as an O-ring or other sealing gasket. The sealing rings disposed within the first window sealing groove 520 and the second window sealing groove 522 may be polymers or plastics with a hardness greater than 50 on the Shore A scale, for example, greater than 60, or greater than or approximately 65. The dimensions of the first window sealing groove 520 and the second window sealing groove 522 are adjusted to receive the sealing rings and to form a seal between the ejection ring 116 and the upper window 122, as shown in Figures 1A-1B.

[0090] The interior of the window support groove 512 is formed by angled protrusions 511. The angled protrusions 511 are disposed inside the first window sealing groove 520 and the second window sealing groove 522. The angled protrusions 511 extend upward from the window support groove 512 and away from the bottom surface 508. The angled protrusions 511 form a portion of the innermost side of the window support groove 512 and a portion of the outermost side of the inner surface 504 of the angled protrusions 511. The angled protrusions 511 extend radially inward while extending upward from the window support groove 512. The angled protrusions 511 shield a portion of the upper window 122 (e.g., peripheral support 172) relative to the process volume 110 (Figures 1A-1B). Concealing the peripheral support 172 relative to the process volume 110 reduces the heating load on the peripheral support 172 and the seals within the first window sealing groove 520 and the second window sealing groove 522. The angled protrusion 511 also protects the sealing ring disposed within the support groove 512 from direct exposure to radiant energy or process gases, thus extending the lifting capacity and reliability of the sealing ring.

[0091] The coolant passage 521 is optionally provided via the injection ring body 502. The coolant passage 521 is configured to receive coolant fluid, such as water or oil. The coolant passage 521 is a portion of the ring provided via the injection ring body 502 and helps to control the temperature of both the injection ring 116 and the base ring 114.

[0092] Figure 5B is a schematic plan view of the injection ring 116 of Figure 5A, which has a plurality of gas injectors 108. Five gas injectors 108 are illustrated in Figure 5B. Other numbers of gas injectors 108 are also contemplated, such as three or more, four or more, five or more, or six or more. The number of gas injectors 108 determines the number of zones in which process gas is injected into the process volume 110 (Figures 1A-1B). The group of gas injectors 108 is centered on plane B. Plane B is the same plane B that passes through the base ring 114. Plane B is set through the central axis A and is perpendicular to plane D. Each of the gas injectors 108 may have a plurality of separate process gas channels (not shown) disposed therein. In an embodiment utilizing five gas injectors 108, a central gas injector 532a forms an inner gas injection zone, two outermost gas injectors 532c form an outer gas injection zone, and two intermediate gas injectors 532b between the central gas injector 532a and the outermost gas injectors 532c form an intermediate gas injection zone. Plane B is disposed through the central gas injector 532a. The two intermediate gas injectors 532b are mirror images of each other in plane B. Similarly, the two outermost gas injectors 532c are mirror images of each other in plane B. Each of the injector channels 508 has a gas injector 108 disposed therethrough. The number of injector channels 508 is equal to the number of gas injectors 108.

[0093] Each of the injector channels 508 has an injector channel width W3. The injector channel width W3 of each of the injector channels 508 is shown to be the same. In an alternative embodiment, the injector channel width W3 varies as the injector channels 508 extend outward from the central gas injector 532a to the outermost gas injector 532c. In some embodiments, the injector channel width W3 of the outermost gas injector 532c through the injector channel 508 through which it extends is greater than the injector channel width W3 of the intermediate gas injector 532b through the injector channel 508 through which it extends. The injector channel width W3 of the intermediate gas injector 532b through the injector channel 508 through which it extends is greater than the injector channel width W3 of the central gas injector 532a through the injector channel 508 through which it extends.

[0094] Alternatively, the injector channel width W3 decreases as the injector channel 508 extends outward from the central gas injector 532a through which the injector channel 508 extends. In this embodiment, the injector channel width W3 of the injector channel 508 through which the outermost gas injector 532c extends is smaller than the injector channel width W3 of the injector channel 508 through which the intermediate gas injector 532b extends. The injection channel width W3 of the intermediate gas injector 532b through which the injector channel 508 extends is smaller than the injection channel width W3 of the central gas injector 532a through which the injector channel 508 extends.

[0095] Each of the injector channels 508 is configured with an injector angle γ relative to plane B. The injector angle γ is relative to plane B, but is on opposite sides of plane D with respect to the first exhaust angle α and the second exhaust angle β. The injector angle γ is less than or about 70 degrees relative to plane B, for example, less than or about 65 degrees relative to plane B, for example, less than or about 60 degrees relative to plane B. The injector angle γ is configured to be within 10 degrees of the second exhaust angle β, such that the difference between the injector angle γ and the second exhaust angle β is about -10 degrees to about 10 degrees, for example, about -5 degrees to about 5 degrees, about -3 degrees to about 3 degrees, or about -1 degree to about 1 degree, for example, about 0 degrees. The injector angle γ and the second exhaust angle β are similar to reduce the deflection of the gas injected by the gas injector 108 into the process volume 110 as such gas is exhausted. Deflected gas can cause non-uniformity in film deposition.

[0096] The injection ring 116 includes a recess 530 in its inner surface 504 opposite to the injector passage 508. The recess 530 corresponds to the one or more upper chamber exhaust passage openings 424 (FIG. 4D). The recess 530 is disposed above the one or more upper chamber exhaust passage openings 424 such that the recess 530 serves as a first portion of the one or more upper chamber exhaust passages 426 of the base ring 114 (FIG. 4A). In the embodiment described herein, there are two recesses 530 corresponding to two upper chamber exhaust passages 426. These two recesses 530 are disposed on the side of the opening 510 opposite to the injector passage 508. These two recesses 530 are disposed on one side of the plane D of the injection ring 116, while the injector passage 508 is disposed on the opposite side of the plane D. These two recesses 530 are offset from the center of the injection ring 116 opposite to the center of the central gas injector 532a through which the injector passage 508 is disposed. Neither of the recesses 530 is disposed through the plane B. The indentation 530 is mirrored on plane B. As described above, offsetting the two indentations 530 prevents the gas from converging inward as it flows from the gas injector 108 (Figs. 1A-1B) through the process volume 110 and into the upper chamber exhaust passage 426.

[0097] As described herein, the size and shape of the indentation 530 are similar to the one or more upper chamber exhaust passage openings 424. The width W4 of each of the indentations 530 is about 0 mm, about 1 mm, about 2 mm, or about 5 mm to about 220 mm, for example about 10 mm to about 150 mm. The width W4 corresponds to the width W2 of the upper chamber exhaust passage opening 424 (FIG. 4D). The width W4 is configured to reduce airflow turbulence within the process volume 110 to achieve primarily layered airflow and uniform deposition on the substrate 150. Similar to the upper chamber exhaust passage opening 424, the indentation 530 is positioned relative to the plane B between the first exhaust angle α and the second exhaust angle β.

[0098] The spray ring body 502 forms the spray ring 116 and is made of a metallic material, such as steel, aluminum, copper, nickel, or a metal alloy. In some embodiments, the spray ring body 502 may be made of silicon carbide material or silicon carbide-doped material.

[0099] The components described herein enable improved uniformity and deposition control within a process chamber (e.g., a process chamber assembly). Although described herein within a single process chamber assembly, the components described herein may also be used separately from existing or alternative deposition process chambers.

[0100] The embodiments of this disclosure are further related to any or more of the following paragraphs 1-20:

[0101] 1. A method for epitaxially depositing a material on a substrate, the method comprising the steps of: placing the substrate on a substrate support surface of a carrier within a process volume of a chamber body, wherein the process volume includes an upper chamber region and a lower chamber region, and wherein during an epitaxial process, the substrate support surface is located in the upper chamber region and the lower surface of the carrier is located in the lower chamber region; during the epitaxial process, allowing a process gas comprising a chemical precursor to flow from an upper gas inlet on a first side of the chamber body through the substrate and to an upper gas outlet on a second side of the chamber body; during the epitaxial process, allowing a purge gas to flow from a lower gas inlet on the first side of the chamber body through the lower surface of the carrier and to a lower gas outlet on the second side of the chamber body; and during the epitaxial process, maintaining a pressure in the lower chamber region greater than the pressure in the upper chamber region.

[0102] 2. A method for epitaxially depositing a material on a substrate, the method comprising the steps of: placing the substrate on a substrate support surface of a carrier within a process volume of a chamber body, wherein the process volume includes an upper chamber region and a lower chamber region, and wherein during an epitaxial process, the substrate support surface is located in the upper chamber region, and the lower surface of the carrier is located in the lower chamber region; during the epitaxial process, causing a process gas comprising a silicon precursor to flow from an upper gas inlet on a first side of the chamber body through the substrate and to an upper gas outlet on a second side of the chamber body. During the epitaxial process, a purge gas is allowed to flow from a lower gas inlet on the first side of the chamber body across the lower surface of the carrier and to a lower gas outlet on the second side of the chamber body; and during the epitaxial process, the pressure in the lower chamber region is maintained at approximately 1% to approximately 5% higher than the pressure in the upper chamber region by one or more of the following steps: increasing the exhaust rate of the process gas through the upper gas outlet; decreasing the exhaust rate of the purge gas through the lower gas outlet; or increasing the flow rate of the purge gas through the lower gas inlet.

[0103] 3. The method as described in paragraph 1 or 2, wherein the pressure in the lower chamber region is maintained at approximately 0.5% to approximately 10% higher than the pressure in the upper chamber region.

[0104] 4. The method as described in paragraph 3, wherein the pressure in the lower chamber region is maintained at approximately 1% to approximately 5% higher than the pressure in the upper chamber region.

[0105] 5. The method as described in paragraph 3 or 5 further includes the step of: independently maintaining each of the pressures in the lower chamber region and the upper chamber region at about 5 to about 25 tors.

[0106] 6. The method of any of paragraphs 1-5, wherein the pressure in the lower chamber region is maintained greater than the pressure in the upper chamber region by increasing the exhaust rate of the process gas through the upper gas outlet.

[0107] 7. The method as described in any of paragraphs 1-6, wherein the pressure in the lower chamber region is maintained greater than the pressure in the upper chamber region by reducing the exhaust rate of the purified gas through the lower gas outlet.

[0108] 8. The method as described in any of paragraphs 1-7, wherein the pressure in the lower chamber region is maintained greater than the pressure in the upper chamber region by increasing the flow rate of the purified gas through the lower gas inlet.

[0109] 9. The method of any of paragraphs 1-8, wherein the purifying gas comprises nitrogen (N2), argon, helium, hydrogen, or any combination thereof, and wherein the chemical precursor comprises silane, disilane, trisilane, chlorosilane, dichlorosilane, tetrachlorosilane, hexachlorodisilane, or any combination thereof.

[0110] 10. The method as described in any of paragraphs 1-9, wherein the gap is disposed around the carrier in the periphery and radially, wherein the gap is disposed between the carrier and the inner surface of the chamber body, and wherein the upper chamber region and the lower chamber region are in fluid communication with each other through the gap.

[0111] 11. A process chamber assembly for processing a substrate, the process chamber assembly comprising: a chamber body; a process volume housed within the chamber body, wherein the process volume includes an upper chamber region and a lower chamber region; a substrate support assembly including a carrier having a substrate support surface opposite to a lower surface and disposed within the process volume, wherein the substrate support assembly is configured to place the carrier in a vertical direction between a loading position and a processing position within the processing region, and wherein when the carrier is in the processing position, the substrate support surface is located in the upper chamber region and the lower surface is located in the lower chamber region; A first gas system in the upper chamber region, the first gas system including an upper gas inlet on a first side of the chamber body and an upper gas outlet on a second side of the chamber body opposite to the first side; a second gas system in the lower chamber region, the second gas system including a lower gas inlet on the first side of the chamber body and a lower gas outlet on the second side of the chamber body; and a gap disposed peripherally and radially around the carrier, wherein the gap is disposed between the carrier and the inner surface of the chamber body, and wherein the upper chamber region and the lower chamber region are in fluid communication with each other through the gap.

[0112] 12. The process chamber as described in paragraph 11, further comprising: a control unit configured to maintain the pressure in the lower chamber region greater than the pressure in the upper chamber region.

[0113] 13. The process chamber as described in paragraph 12, wherein the pressure in the lower chamber region is approximately 0.5% to approximately 10% higher than the pressure in the upper chamber region.

[0114] 14. The process chamber as described in paragraph 12 or 13, wherein the control unit is configured to independently maintain each of the pressures in the lower chamber region and the upper chamber region at about 5 Torr to about 25 Torr.

[0115] 15. The process chamber as described in any of paragraphs 11-14, further comprising: an upper lamp module and a lower lamp module, wherein the carrier is disposed between the upper lamp module and the lower lamp module.

[0116] 16. The process chamber as described in paragraph 15 further includes: an upper window disposed between the upper lamp module and the carrier; and a lower window disposed between the lower lamp module and the carrier.

[0117] 17. The process chamber as described in paragraph 16 further includes: a base ring disposed between the upper lamp module and the lower lamp module, wherein the base ring includes: a base ring body having an inner base ring surface and an outer base ring surface; a substrate transfer channel disposed through the inner base ring surface and the outer base ring surface; a lower chamber exhaust channel disposed opposite to the substrate transfer channel and disposed through the inner surface and the outer surface; and one or more upper chamber exhaust channels.

[0118] 18. The process chamber as described in paragraph 17, wherein the substrate transfer channel includes the lower gas inlet on the first side of the chamber body, and wherein the lower chamber exhaust channel includes the lower gas outlet on the second side of the chamber body.

[0119] 19. The process chamber as described in paragraph 17 or 18, further comprising: a spray ring disposed on top of the base ring and between the upper lamp module and the lower lamp module, wherein the spray ring comprises: a spray ring body having an inner spray ring surface and an outer spray ring surface; and one or more sprayer channels disposed between the inner spray ring surface and the outer spray ring surface and above the substrate transfer channel.

[0120] 20. The process chamber as described in paragraph 19, wherein the one or more injector passages include the upper gas inlet on the first side of the chamber body, and wherein the one or more upper chamber exhaust passages include the upper gas outlet on the second side of the chamber body.

[0121] While the foregoing relates to embodiments of this disclosure, other and additional embodiments may be designed without departing from the basic scope of this disclosure, and the scope of this disclosure is determined by the following claims. All documents described herein are incorporated herein by reference, including any priority documents and / or test procedures, provided they are not inconsistent with this document. It will be understood from the foregoing general description and specific embodiments that while the form of this disclosure has been illustrated and described, various modifications may be made without departing from the spirit and scope of this disclosure. Therefore, it is not intended to limit this disclosure. Similarly, for legal purposes, the term "comprising" is considered synonymous with the term "including". Likewise, whenever the transitional phrase "comprising" precedes a component, element, or group of elements, it should be understood that the same component or group of elements preceding the description of the component, element, or multiple elements with the transitional phrases "substantially composed of," "composed of," "selected from groups of," or "is" are also considered, and vice versa. As used herein, the term "about" refers to a change of + / - 10% compared to the nominal value. It should be understood that this change can be included in any value provided herein.

[0122] Certain embodiments and features have been described using sets of upper and lower limits for values. It should be understood that, unless otherwise indicated, ranges including combinations of any two values ​​(e.g., any combination of a lower limit value and any upper limit value, any combination of two lower limits and / or any combination of two upper limits) are also considered. Certain lower limits, upper limits, and ranges appear in one or more of the following claims. [Simplified Explanation of the Diagram]

[0007] In order to understand the above features of this disclosure in detail, a more detailed description of this disclosure, which has been briefly summarized above, can be obtained by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings only show exemplary embodiments and should not be regarded as limiting the scope of such embodiments; other equally effective embodiments are acceptable.

[0008] FIG1A depicts a schematic illustration of a process chamber assembly having a carrier in a loading position according to one or more embodiments described and discussed herein.

[0009] FIG1B depicts a schematic illustration of the process chamber assembly shown in FIG1A, based on one or more embodiments described and discussed herein, wherein the carrier is in the processing position.

[0010] Figure 2A illustrates a schematic diagram of the gas flow paths in the upper chamber region and the lower chamber region of the process chamber according to one or more embodiments described and discussed herein.

[0011] Figures 2B and 2C illustrate schematic diagrams of different gaps provided between the upper chamber region and the lower chamber region of a process chamber, according to one or more embodiments described and discussed herein.

[0012] Figure 3 illustrates a schematic diagram of the gas flow paths in the upper chamber region and the lower chamber region of the process chamber according to one or more embodiments described and discussed herein.

[0013] FIG4A is a schematic cross-sectional perspective view of a chamber body assembly according to one or more embodiments described and discussed herein.

[0014] FIG4B is a schematic cross-sectional view of the chamber body assembly of FIG4A taken through another plane, based on one or more embodiments described and discussed herein.

[0015] FIG4C is a schematic cross-sectional view of the base ring according to one or more embodiments described and discussed herein.

[0016] FIG4D is a schematic plan view of the base ring of FIG4C according to one or more embodiments described and discussed herein.

[0017] FIG4E is a schematic cross-sectional view of the base ring taken through the cut line 4E-4E of FIG4C, according to one or more embodiments described and discussed herein.

[0018] FIG5A is a schematic cross-sectional view of the injection ring according to one or more embodiments described and discussed herein.

[0019] FIG5B is a schematic plan view of the injection ring of FIG5A according to one or more embodiments described and discussed herein.

[0020] For ease of understanding, the same reference numerals are used where possible to denote common elements in the figures. It is anticipated that elements and features of one embodiment may be advantageously incorporated into other embodiments. [Biomaterial Storage]

[0124] Domestic storage information (please note in order of storage institution, date, and number): None

[0125] Overseas Deposit Information (Please note in the order of deposit country, institution, date, and number) None

Claims

1. A method for epitaxially depositing a material on a substrate, the method comprising the steps of: placing a substrate on a substrate support surface of a carrier within a process volume of a chamber body, wherein the process volume includes an upper chamber region and a lower chamber region, and wherein during an epitaxial process, the substrate support surface is located in the upper chamber region, and the lower surface of the carrier is located in the lower chamber region; during the epitaxial process, allowing a process gas comprising a chemical precursor to flow from an upper gas inlet on a first side of the chamber body through the substrate and to an upper gas outlet on a second side of the chamber body; during the epitaxial process, allowing a purge gas to flow from a lower gas inlet on the first side of the chamber body through the lower surface of the carrier and to a lower gas outlet on the second side of the chamber body; and during the epitaxial process, maintaining a pressure in the lower chamber region greater than a pressure in the upper chamber region.

2. The method of claim 1, wherein the pressure in the lower chamber region is maintained at approximately 0.5% to approximately 10% higher than the pressure in the upper chamber region.

3. The method of claim 2, wherein the pressure in the lower chamber region is maintained at approximately 1% to approximately 5% higher than the pressure in the upper chamber region.

4. The method of claim 2, further comprising the step of: independently maintaining each of the pressures in the lower chamber region and the upper chamber region at about 5 to about 25 tors.

5. The method of claim 1, wherein the pressure in the lower chamber region is maintained greater than the pressure in the upper chamber region by increasing an exhaust rate of the process gas through the upper gas outlet.

6. The method of claim 1, wherein the pressure in the lower chamber region is maintained greater than the pressure in the upper chamber region by reducing the exhaust rate of the purified gas through the lower gas outlet.

7. The method of claim 1, wherein the pressure in the lower chamber region is maintained greater than the pressure in the upper chamber region by increasing the flow rate of the purified gas through the lower gas inlet.

8. The method of claim 1, wherein the purifying gas comprises nitrogen (N2), argon, helium, hydrogen, or any combination thereof, and wherein the chemical precursor comprises silane, disilane, trisilane, chlorosilane, dichlorosilane, tetrachlorosilane, hexachlorodisilane, or any combination thereof.

9. The method of claim 1, wherein a gap is disposed peripherally and radially around the carrier, wherein the gap is disposed between the carrier and an inner surface of the chamber body, and wherein the upper chamber region and the lower chamber region are in fluid communication with each other through the gap.

10. A method for epitaxially depositing a material on a substrate, the method comprising the steps of: placing a substrate on a substrate support surface of a carrier within a process volume of a chamber body, wherein the process volume includes an upper chamber region and a lower chamber region, and wherein during an epitaxial process, the substrate support surface is located in the upper chamber region and the lower surface of the carrier is located in the lower chamber region; during the epitaxial process, causing a process gas comprising a silicon precursor to flow from an upper gas inlet on a first side of the chamber body through the substrate and to an upper gas outlet on a second side of the chamber body; During the epitaxial process, a purge gas flows from a lower gas inlet on a first side of the chamber body across the lower surface of the carrier and flows to a lower gas outlet on a second side of the chamber body; and during the epitaxial process, a pressure in the lower chamber region is maintained at approximately 1% to approximately 5% higher than a pressure in the upper chamber region by one or more of the following steps: increasing the exhaust rate of the process gas through the upper gas outlet; decreasing the exhaust rate of the purge gas through the lower gas outlet; or increasing the flow rate of the purge gas through the lower gas inlet.

11. A process chamber assembly for processing a substrate, the process chamber assembly comprising: A chamber body; a process volume housed within the chamber body, wherein the process volume includes an upper chamber region and a lower chamber region; a substrate support assembly including a carrier having a substrate support surface opposite to a lower surface and disposed within the process volume, wherein the substrate support assembly is configured to vertically position the carrier between a loading position and a processing position within the processing region, and wherein when the carrier is in the processing position, the substrate support surface is located in the upper chamber region and the lower surface is located in the lower chamber region; a first gas system in the upper chamber region, the first gas system including an upper gas inlet on a first side of the chamber body and an upper gas outlet on a second side of the chamber body opposite to the first side; A second gas system in the lower chamber region, the second gas system including a lower gas inlet on the first side of the chamber body and a lower gas outlet on the second side of the chamber body; and a gap disposed peripherally and radially around the carrier, wherein the gap is disposed between the carrier and an inner surface of the chamber body, and wherein the upper chamber region and the lower chamber region are in fluid communication with each other through the gap.

12. The process chamber assembly as claimed in claim 11, further comprising: A control unit is configured to maintain a pressure in the lower chamber region greater than a pressure in the upper chamber region.

13. The process chamber assembly as claimed in claim 12, wherein the pressure in the lower chamber region is approximately 0.5% to approximately 10% higher than the pressure in the upper chamber region.

14. The process chamber assembly as claimed in claim 12, wherein the control unit is configured to independently maintain each of the pressures in the lower chamber region and the upper chamber region at about 5 Torr to about 25 Torr.

15. The process chamber assembly as claimed in claim 11, further comprising: An upper light module and a lower light module, wherein the carrier is disposed between the upper light module and the lower light module.

16. The process chamber assembly as claimed in claim 15, further comprising: An upper window is positioned between the upper light module and the carrier; And a lower window, located between the lower light module and the carrier.

17. The process chamber assembly as claimed in claim 16, further comprising: A base ring is disposed between the upper lamp module and the lower lamp module, wherein the base ring includes: a base ring body having an inner base ring surface and an outer base ring surface; a substrate transfer channel disposed through the inner base ring surface and the outer base ring surface; a lower chamber exhaust channel disposed opposite to the substrate transfer channel and disposed through the inner surface and the outer surface; and one or more upper chamber exhaust channels.

18. The process chamber assembly of claim 17, wherein the substrate transfer channel includes the lower gas inlet on the first side of the chamber body, and wherein the lower chamber exhaust channel includes the lower gas outlet on the second side of the chamber body.

19. The process chamber assembly as claimed in claim 17, further comprising: A spray ring is disposed on the top of the base ring and between the upper lamp module and the lower lamp module, wherein the spray ring includes: a spray ring body having an inner spray ring surface and an outer spray ring surface; and one or more sprayer channels disposed between the inner spray ring surface and the outer spray ring surface and above the substrate transport channel.

20. The process chamber assembly of claim 19, wherein the one or more injector passages include the upper gas inlet on the first side of the chamber body, and wherein the one or more upper chamber exhaust passages include the upper gas outlet on the second side of the chamber body.

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