Methods for manufacturing a protective film wafer, a semiconductor device, and applications of the wafer.

Abstract

The present invention relates to a first protective film forming sheet for forming a first protective film on at least one bumped surface of a semiconductor wafer. The first protective film forming sheet is formed by sequentially stacking a first substrate, a buffer layer, an intermediate release layer, and a first protective film forming film in the thickness direction of these layers. The intermediate release layer contains an ethylene-vinyl acetate copolymer.

Description

Methods for manufacturing a first protective film wafer, a semiconductor device, and applications of the wafer. This invention relates to a first protective film forming wafer, a method for manufacturing a semiconductor device, and the use of the wafer. This application claims priority based on Japanese Patent Application No. 2022-003126, filed on January 12, 2022, the contents of which are incorporated herein by reference. Previously, when mounting multi-pin LSI (Large Scale Integration) packages used in MPUs (Micro Processor Units) or gate arrays onto printed wiring boards, the following flip-chip mounting method was used: a semiconductor chip with convex electrodes (hereinafter referred to as "bumps" in this specification) formed on the bonding pads was used, and these bumps were brought into contact with corresponding terminals on the chip mounting substrate by a so-called face-down method, thereby performing fusion / diffusion bonding. The semiconductor wafer used in this assembly method is obtained, for example, by grinding or dicing the side of a semiconductor wafer with bumps formed on the circuit surface (in other words, the bump forming surface) to monolithize it. During the process of obtaining this semiconductor wafer, for example, to protect the bump forming surface and the bumps of the semiconductor wafer, a hardening protective film is attached to the bump forming surface, and the film is hardened, thereby forming a protective film on the bump forming surface. In this specification, this protective film forming film and the protective film are sometimes referred to as "first protective film forming film" and "first protective film," respectively. At this time, the bumps on the bump forming surface must penetrate the protective film forming film (first protective film forming film), and the top of the bumps must protrude from the protective film forming film. Figure 1 is a cross-sectional view schematically illustrating an example of a state where, contrary to this situation, a protective film formation film remains on the upper part of the bump. In the semiconductor wafer 9 shown here, a protective film formation film 82 is attached to the surface 9a with bumps 91 (bump formation surface), but the top 9101 of the bump 91 does not protrude from the protective film formation film 82, and the protective film formation film 82 remains on the upper part 910 of the bump 91. An example is shown here where the entire surface 91a of the bump 91 is covered by the protective film formation film 82, but this example is an example of a residual state of the protective film formation film 82; for example, on the upper part 910 of the bump 91, there is also a situation where a portion of the surface 91a is not covered by the protective film formation film 82 and is exposed. Thus, a semiconductor wafer with a protective film formation film remaining on the upper part of the bump cannot be used for flip-chip packaging in this state. On the other hand, when attaching the protective film to the bump forming surface, a protective film forming sheet is sometimes used, which sequentially stacks a protective film forming film, an adhesive layer, and a substrate. In this specification, this protective film forming sheet is sometimes referred to as the "first protective film forming sheet". In this case, the adhesive layer and the substrate are removed from the protective film forming film after it is attached to the bump forming surface, and the protective film forming film is then hardened. As a protective film forming sheet, a protective film forming sheet is disclosed, which sequentially comprises a substrate, an adhesive layer that can be cured by energy lines, a buffer layer, and a curable protective film forming film. The shear storage modulus of the protective film forming film before curing and the tensile storage modulus of the adhesive layer after energy line curing are set to specific ranges (see Patent Document 1). By using this protective film forming sheet (first protective film forming sheet), the adhesive layer and the substrate can be easily removed from the protective film forming film (first protective film forming film) attached to the bump forming surface, thereby enabling the formation of a good protective film (first protective film) on the bump forming surface. Furthermore, when the protective film forming film is attached to the bump forming surface, the protective effect of the bump is enhanced by the buffer layer. [Prior Art Documents] [Patent Documents] [Patent Document 1] International Publication No. 2020 / 189447. [The problem that the invention aims to solve] On the other hand, in recent years, in order to efficiently form a protective film on the bump formation surface, research has been conducted on attaching the protective film forming film in the protective film forming wafer to the bump formation surface at a higher speed than before. However, when attaching the protective film forming film to the bump formation surface, not only is the attachment itself more difficult, but it is also difficult to make the top of the bump protrude from the protective film forming film, and even if it does protrude, the protective film forming film is easily left on the upper part of the bump including the top. Thus, if the protective film forming film remains on the upper part of the bump, it becomes a state where the protective film is directly attached to the upper part of the bump, and in this state, the semiconductor wafer is not suitable for flip-chip packaging. In contrast, although the protective film forming film in the protective film forming wafer disclosed in Patent Document 1 has excellent adhesion to the bump formation surface, it is not designed for high-speed attachment. The object of this invention is to provide a protective film forming sheet, comprising a protective film forming film for forming a protective film on a bump-covered surface of a semiconductor wafer, and wherein even when the aforementioned protective film forming sheet is rapidly attached to the aforementioned surface of the semiconductor wafer via the protective film forming film, the top of the aforementioned bump can protrude from the protective film forming film, thereby suppressing the retention of the protective film forming film on the top portion of the bump. [Means for solving the problem] In order to solve the above problems, the present invention adopts the following configuration. [1] A first protective film forming sheet is used to form a first protective film on at least the bumped surface of a semiconductor wafer. The first protective film forming sheet is formed by sequentially stacking a first substrate, a buffer layer, an intermediate release layer and a first protective film forming film in the thickness direction of these layers. The intermediate release layer contains an ethylene-vinyl acetate copolymer. [2] The first protective film forming sheet as described in [1], wherein in the aforementioned ethylene-vinyl acetate copolymer, the amount of constituent units derived from vinyl acetate is in a ratio of 16% to 40% by mass relative to the total amount of constituent units. [3] The first protective film forming sheet as described in [1] or [2], wherein the weight average molecular weight of the aforementioned ethylene-vinyl acetate copolymer is 200,000 or less. [4] A method for manufacturing a semiconductor device, using a first protective film forming sheet as described in any one of [1] to [3], the manufacturing method comprising: an attachment step, attaching the first protective film forming film of the first protective film forming sheet to a bump-bearing surface of a semiconductor wafer, such that the top of the bump protrudes from the first protective film forming film, thereby setting the first protective film forming sheet on the semiconductor wafer; a first protective film forming step, after the attachment step, removing the layer other than the first protective film forming film from the first protective film forming film of the first protective film forming sheet, and further, when the first protective film forming film is hardenable, hardening the first protective film forming film to form a first protective film, wherein the first protective film forming film is... In the case of non-hardening, the first protective film formed after removing the layers other than the first protective film is regarded as the first protective film, thereby forming the first protective film on the bumped surface; in the dicing step, after the first protective film forming step, the semiconductor wafer is diced to form a semiconductor wafer; in the cutting step, after the first protective film forming step, the first protective film is cut; and in the assembly step, the semiconductor wafer with the first protective film obtained after the dicing and cutting steps is flip-chip bonded to a substrate with the top of the bump, the semiconductor wafer with the first protective film having the semiconductor wafer and the first protective film provided on the bumped surface of the semiconductor wafer, and the top of the bump protrudes from the first protective film. [5] In the semiconductor device manufacturing method described in [4], in the attachment step, the first protective film is attached to the bumped surface of the semiconductor wafer at an attachment speed of 4 mm / s or more. [6] An application of a sheet for forming a first protective film on at least one bumped surface of a semiconductor wafer, the sheet being formed by sequentially stacking a first substrate, a buffer layer, an intermediate release layer, and a first protective film forming film in the thickness direction of these layers, the intermediate release layer containing an ethylene-vinyl acetate copolymer. [Invention Efficacy] According to the present invention, a protective film forming sheet is provided, which includes a protective film forming film for forming a protective film on a bump-bearing surface of a semiconductor wafer. Even when the protective film forming sheet is attached to the aforementioned surface of the semiconductor wafer at high speed via the protective film forming film, the top of the bump can protrude from the protective film forming film, thereby suppressing the residual protective film forming film on the top of the bump. ◇ First Protective Film Forming Sheet One embodiment of the present invention provides a first protective film forming sheet for forming a first protective film at least on a bump-bearing surface of a semiconductor wafer. The first protective film forming sheet is constructed by sequentially depositing a first substrate, a buffer layer, an intermediate release layer, and a first protective film forming film in the thickness direction of these layers. The intermediate release layer contains an ethylene-vinyl acetate copolymer. By having this configuration, the first protective film forming sheet of this embodiment allows the top of the bumps to protrude from the protective film forming film even when the protective film forming film is applied at high speed to the bump-bearing surface of the semiconductor wafer, thereby suppressing residual protective film forming film on the top portion of the bumps. In this specification, the surface with bumps in either a semiconductor wafer or a semiconductor wafer is sometimes referred to as the "bump forming surface". Furthermore, the surface on the opposite side of the bump forming surface in a semiconductor wafer or semiconductor wafer is sometimes referred to as the "inner surface". In this specification, the protective film disposed on the side opposite to the bump formation surface (i.e., the inner surface) of a semiconductor wafer or semiconductor wafer is referred to as the "second protective film". To provide the second protective film on the side opposite to the bump formation surface (inner surface) of a semiconductor wafer or semiconductor wafer, a second protective film forming sheet is used, comprising a second protective film forming film for forming the second protective film. Examples of the second protective film forming sheet include a sheet comprising a dicing die and the second protective film forming film disposed on the dicing die. When the dicing die has a substrate identical to the first substrate, that substrate is referred to as the "second substrate". The first protective film forming sheet of this embodiment can form the first protective film not only on the bump forming surface of the semiconductor wafer, but also, as described later, on the side surface. That is, the first protective film forming sheet of this embodiment can function as a sheet for forming the first protective film at least on the bump forming surface of the semiconductor wafer. Figure 2 is a cross-sectional view schematically showing an example of a first protective film forming sheet of this embodiment. Furthermore, for ease of understanding of the features of the invention, the figures used in the following description are sometimes enlarged representations of key parts, and are not limited to the actual dimensional ratios of the constituent elements. The first protective film forming sheet 1 shown here comprises a first substrate 11, a buffer layer 12 disposed on one side 11a of the first substrate 11, an intermediate release layer 13 disposed on the side 12a of the buffer layer 12 opposite to the side of the first substrate 11, and a first protective film forming film 14 disposed on the side 13a of the intermediate release layer 13 opposite to the side of the buffer layer 12 (sometimes referred to as "first side" in this specification). That is, the first protective film forming sheet 1 is formed by sequentially laminating the first substrate 11, the buffer layer 12, the intermediate release layer 13, and the first protective film forming film 14 in the thickness direction of these layers. The first protective film forming sheet 1 further comprises a release film 15 disposed on the side 14a of the first protective film forming film 14 opposite to the side of the intermediate release layer 13 (sometimes referred to as "first side" in this specification). In the first protective film forming sheet 1, the intermediate release layer 13 contains an ethylene-vinyl acetate copolymer (sometimes referred to as "EVA" in this specification). The release film 15 is not particularly limited and can be any known release film. In the first protective film forming sheet 1, the release film 15 can be of any configuration, and the first protective film forming sheet 1 may also not have the release film 15. The first protective film forming sheet of this embodiment is not limited to the first protective film forming sheet shown in FIG2. It can also be modified, deleted, or have a portion added to the first protective film forming sheet shown in FIG2 without impairing the effectiveness of the present invention. For example, the first protective film forming sheet of this embodiment may further include other layers that are not equivalent to any of the first substrate, buffer layer, intermediate release layer, first protective film forming film, and release film. However, in the first protective film forming sheet without a release film, it is preferable that the first protective film forming film is the outermost layer, that is, the outermost layer disposed in the lamination direction of each layer. Furthermore, in the first protective film forming sheet of this embodiment, it is preferable that the first substrate and buffer layer are in direct contact, the buffer layer and intermediate release layer are in direct contact, and the intermediate release layer and first protective film forming film are in direct contact. Next, the layers constituting the first protective film forming sheet of this embodiment will be described. ◎ First Protective Film Formation The aforementioned first protective film formation can be curable or non-curable. For example, the aforementioned first protective film formation can function as a first protective film through curing, or it can function as a first protective film in an uncured state. The curable first protective film formation can be either thermosetting or energy-line curing, or it can have both thermosetting and energy-line curing properties. In terms of forming a first protective film with higher protective capabilities, the first protective film forming film is preferably hardened. In this specification, the term "energy line" refers to a beam of electromagnetic waves or charged particles possessing energy quanta. Examples of energy lines include ultraviolet light, radiation, and electron beams. Ultraviolet light can be obtained by using high-pressure mercury lamps, fusion lamps, xenon lamps, black light lamps, or LED (Light Emitting Diode) lamps as ultraviolet light sources. Electron beams can be obtained by irradiating electron beams generated by electron beam accelerators. In this specification, the term "energy line hardening property" refers to the property of hardening by irradiation of an energy line, and the term "non-energy line hardening property" refers to the property of not hardening even when irradiated with an energy line. In this specification, the term "non-hardening property" refers to the property of not hardening by any method, such as heating or irradiating an energy line. The first protective film forming film contains resin components, and may or may not contain components other than resin components. The first protective film is formed of a soft material, exhibiting high conformability to the bump formation surface and other uneven surfaces of the semiconductor wafer. As a result, the first protective film and the first protective film exhibit high adhesion to the bump formation surface and other uneven surfaces of the semiconductor wafer, and the first protective film exhibits high adhesion to the bump formation surface and other uneven surfaces of the semiconductor wafer. When the first protective film forming film of this embodiment is heated and attached to the bump forming surface of a semiconductor wafer, the bumps on the bump forming surface penetrate the first protective film forming film, and the top of the bumps protrudes from the first protective film forming film. Furthermore, the softened first protective film forming film expands between the bumps in a manner that covers the bumps, closely contacting the bump forming surface, and covering the surface of the bumps, especially the surface near the bump forming surface, thereby embedding the base of the bumps. In this state, the residue of the first protective film forming film on the upper part of the bumps is suppressed. When the first protective film forming film is hardened, the first protective film forming film in this state (the state in which the base of the bumps is embedded) is subsequently hardened to finally form the first protective film. When the first protective film forming film is not hardened, the first protective film forming film in this state (the state in which the base of the bumps is embedded) and thereafter functions as the first protective film. Furthermore, adhesion of the first protective film to the upper part of the bump is naturally suppressed. In particular, when using the first protective film forming sheet of this embodiment, even when the first protective film forming film in the first protective film forming sheet is attached to the bump forming surface of the semiconductor wafer at high speed, the top of the bump protrudes from the first protective film forming film, and the residue of the first protective film forming film and adhesion of the first protective film to the upper part of the bump are suppressed. The reason why the first protective film forming sheet of this embodiment has such excellent characteristics is that the first protective film forming sheet is composed of a first substrate, a buffer layer, an intermediate release layer, and a first protective film forming film sequentially laminated, and the aforementioned intermediate release layer contains an ethylene-vinyl acetate copolymer. Whether there is a residual first protective film on the upper part of the bump forming surface and whether the first protective film is attached can be confirmed, for example, by obtaining scanning electron microscope (SEM) images of the upper part of the bump. Regardless of whether the aforementioned first protective film is hardened or non-hardened, and in the case of hardening, whether it is thermosetting or energy-line hardening, the first protective film can be composed of one layer (single layer) or multiple layers (two or more). When the first protective film is composed of multiple layers, these multiple layers can be the same or different from each other, and there is no particular limitation on the combination of these multiple layers. In this specification, the situation is not limited to the formation of the first protective film mentioned above. The phrase "multilayers may be the same or different" means that "all layers may be the same, all layers may be different, or only some layers may be the same". Furthermore, the phrase "multilayers may be different" means that "at least one of the constituent materials and thicknesses of each layer is different". Regardless of whether the aforementioned first protective film is curable or non-curable, and in the case of curable film, whether thermosetting or energy-line curing, the thickness of the aforementioned first protective film is preferably from 1 μm to 200 μm, more preferably from 10 μm to 150 μm, and even more preferably from 20 μm to 130 μm. By having the thickness of the first protective film at or above the aforementioned lower limit, the effectiveness of the first protective film becomes greater. For example, when using the first protective film to form a protective film, a protective film with higher protective capabilities can be formed. By having the thickness of the first protective film at or below the aforementioned upper limit, excessive thickness of the first protective film can be prevented. As described below, when the first protective film is formed not only on the bump formation surface of the semiconductor wafer but also on the side surface, a semiconductor wafer with trenches on the bump formation surface must be used as the semiconductor wafer. Thus, when the first protective film is formed on the side surface of the semiconductor wafer, for the same reasons as above, the thickness of the first protective film is preferably 2 μm to 200 μm, more preferably 30 μm to 150 μm, and even more preferably 30 μm to 130 μm, in order to ensure that the first protective film can adequately fill the aforementioned trenches. On the other hand, when the first protective film is formed on the bump formation surface of the semiconductor wafer but not on the side surface, a semiconductor wafer without trenches on the bump formation surface can be used as the semiconductor wafer. In this case, for the same reasons as above (the effectiveness of the first protective film becomes higher; the thickness of the first protective film can be suppressed from being too thick), the thickness of the first protective film is preferably 1 μm to 100 μm, more preferably 20 μm to 75 μm, and even more preferably 35 μm to 55 μm. In this specification, the term "thickness of the first protective film forming film" refers to the overall thickness of the first protective film forming film. For example, the term "thickness of the first protective film forming film composed of multiple layers" refers to the total thickness of all the layers constituting the first protective film forming film. In this specification, the term "thickness" is not limited to the case of the first protective film forming a film. Unless otherwise specified, it refers to the average thickness measured at 5 randomly selected locations on the object, which can be obtained using a constant pressure thickness measuring instrument according to JIS K7130. [Composition for Forming a First Protective Film] The aforementioned first protective film can be formed using a composition for forming a first protective film containing the constituent material of the film. For example, the first protective film can be formed by applying the aforementioned composition for forming a first protective film to the surface to which the first protective film is to be formed, and then drying it as needed. The ratio of the content of the components in the composition for forming a first protective film that do not vaporize at room temperature is generally the same as the ratio of the content of the aforementioned components in the first protective film. In this specification, "room temperature" means a temperature that is neither particularly cold nor particularly hot, that is, a normal temperature, such as a temperature of 15°C to 25°C. The thermosetting first protective film can be formed using a composition for forming a thermosetting first protective film, the energy-line curable first protective film can be formed using a composition for forming an energy-line curable first protective film, and the non-curable first protective film can be formed using a composition for forming a non-curable first protective film. In this specification, when the first protective film has both thermosetting and energy-line curable properties, and the contribution of thermosetting to the formation of the first protective film is greater than the contribution of energy-line curing, the first protective film is considered a thermosetting first protective film. Conversely, when the contribution of energy-line curing to the formation of the first protective film is greater than the contribution of thermosetting, the first protective film is considered an energy-line curable first protective film. In the aforementioned first protective film forming film, the total content of one or more of the components described later in the first protective film forming film is no more than 100% by mass relative to the total mass of the first protective film forming film. Similarly, in the composition for forming the first protective film, the total content of one or more of the components described later in the first protective film forming composition is no more than 100% by mass relative to the total mass of the composition for forming the first protective film. The first protective film can be formed by applying the composition using known methods, such as the following types of coating machines: air knife coating machine, doctor blade coating machine, bar coating machine, gravure coating machine, roller coating machine, roller knife coating machine, curtain coating machine, die coating machine, knife coating machine, screen coating machine, Mayer bar coating machine, and light-touch coating machine. Regardless of whether the aforementioned first protective film forming film is curable or non-curable, and in the case of curable film, whether thermosetting or energy-line curable, the drying conditions of the first protective film forming composition are not particularly limited. However, when the first protective film forming composition contains the solvent described later, it is preferable to perform heat drying. Furthermore, the first protective film forming composition containing the solvent is preferably heat dried, for example, at 70°C to 130°C for 10 seconds to 5 minutes. However, the thermosetting first protective film forming composition is preferably heat dried in a manner that prevents the composition itself and the thermosetting first protective film forming film formed by the composition from undergoing thermosetting. The following provides a more detailed explanation of the thermosetting first protective film forming film, the energy line curing first protective film forming film, and the non-curing first protective film forming film. ○ Thermosetting first protective film forming film As a thermosetting first protective film forming film, for example, a film containing a polymer component (A), a thermosetting component (B), a curing accelerator (C), a filler material (D), and an additive (I) can be cited. Regarding the curing conditions for forming the first protective film by curing the thermosetting first protective film, there are no particular limitations on the degree of curing, as long as the first protective film achieves a degree of sufficient curing to fully perform its function. The curing conditions can be appropriately selected based on the type of thermosetting first protective film. For example, the heating temperature for thermosetting the thermosetting first protective film is preferably between 100°C and 200°C, such as any one of 110°C to 170°C and 120°C to 150°C. The heating time for the aforementioned thermosetting is preferably between 0.5 hours and 5 hours, such as any one of 0.5 hours to 4 hours and 1 hour to 3 hours. [Composition for forming a thermosetting first protective film] Examples of compositions for forming a thermosetting first protective film include a composition (III) containing a polymer component (A), a thermosetting component (B), a curing accelerator (C), a filler material (D), and an additive (I) (sometimes referred to simply as "composition (III)" in this specification). [Polymer Component (A)] Polymer component (A) is a polymer compound used to impart film-forming properties or flexibility to the thermosetting first protective film. Furthermore, in this specification, the polymer compound also includes products of a polycondensation reaction. The polymer component (A) contained in the composition (III) and the thermosetting first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these components can be arbitrarily selected. Examples of polymer components (A) include: polyvinyl acetal, acrylic resin, urethane resin, phenoxy resin, silicone resin, saturated polyester resin, etc. Among these, polymer component (A) is preferably polyvinyl acetal. As the aforementioned polyvinyl acetal in polymer component (A), examples of known polyvinyl acetals can be cited. Among them, preferred polyvinyl acetals include, for example, polyvinyl formal, polyvinyl butyral, and more preferably polyvinyl butyral. As polyvinyl butyral, examples of polyvinyl butyral include polyvinyl butyral having the constituent units represented by the following formulas (i)-1, (i)-2 and (i)-3. [Chemistry 1] (In the formula, l, m, and n are each an independent integer greater than or equal to 1.) The weight-average molecular weight (Mw) of polyvinyl acetal is preferably between 5,000 and 200,000, and more preferably between 8,000 and 100,000. By using this range of weight-average molecular weight of polyvinyl acetal, the effect of suppressing the residue of the thermosetting first protective film on the upper part of the bump is improved when the thermosetting first protective film is attached to the aforementioned bump forming surface. In this specification, the term "weight average molecular weight" refers to the converted value of polystyrene determined by gel permeation chromatography (GPC) unless otherwise specified. The glass transition temperature (Tg) of polyvinyl acetal is preferably between 40°C and 80°C, and more preferably between 50°C and 70°C. By using a Tg range of polyvinyl acetal, the effect of suppressing the residue of the thermosetting first protective film on the upper part of the bump is improved when the thermosetting first protective film is attached to the aforementioned bump forming surface. The ratio of the three or more monomers constituting polyvinyl acetal can be arbitrarily selected. The acrylic resin mentioned above in polymer component (A) can be exemplified by known acrylic polymers. The weight-average molecular weight (Mw) of the acrylic resin is preferably from 5,000 to 1,000,000, more preferably from 8,000 to 800,000. With the weight-average molecular weight of the acrylic resin in this range, the effect of suppressing the residue of the thermosetting first protective film on the upper part of the bump is improved when the thermosetting first protective film is attached to the aforementioned bump forming surface. The glass transition temperature (Tg) of the acrylic resin is preferably -50°C to 70°C, and more preferably -30°C to 60°C. By using this range of Tg for the acrylic resin, the effect of suppressing the residue of the thermosetting first protective film on the upper part of the bump is improved when the thermosetting first protective film is attached to the aforementioned bump forming surface. When an acrylic resin has two or more constituent units, its glass transition temperature (Tg) can be calculated using the Fox formula. The Tg of the monomer from which the aforementioned constituent units are derived can be the value described in a polymer datasheet or adhesive manual. The monomers constituting acrylic resin can be only one type or two or more types. When there are two or more types, the combination and ratio of these monomers can be arbitrarily selected. Examples of acrylic resins include: polymers of one or more meth)acrylates; copolymers of two or more monomers selected from meth)acrylate, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-hydroxymethylacrylamide; and copolymers of one or more meth)acrylates with one or more monomers selected from meth)acrylate, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-hydroxymethylacrylamide. In this specification, the concept of "(meth)acrylic acid" includes both "acrylic acid" and "methacrylic acid". The same applies to similar terms, such as "(meth)acrylate" which includes both "acrylate" and "methacrylate", and "(meth)acryl" which includes both "acryl" and "methacryl". Examples of (meth)acrylates that constitute acrylic resins include, for example: methyl methacrylate, ethyl methacrylate, n-propyl methacrylate, isopropyl methacrylate, n-butyl methacrylate, isobutyl methacrylate, dibutyl methacrylate, terbutyl methacrylate, pentyl methacrylate, hexyl methacrylate, heptyl methacrylate, 2-ethylhexyl methacrylate, isooctyl methacrylate, n-octyl methacrylate, n-nonyl methacrylate, isononyl methacrylate, decyl methacrylate, undecyl methacrylate, dodecyl methacrylate (laurate), tridecyl methacrylate, tetradecyl methacrylate (myristyl methacrylate), pentadecyl methacrylate, hexadecyl methacrylate (palmitoyl methacrylate), heptadecanyl methacrylate, and so on. Alkyl methacrylates, such as octadecyl methacrylate (stearyl methacrylate), in which the alkyl group has a chain structure with 1 to 18 carbon atoms; cycloalkyl methacrylates, such as isobornyl methacrylate and dicyclopentyl methacrylate; aralkyl methacrylates, such as benzyl methacrylate; cycloalkyl methacrylates, such as dicyclopentenyl methacrylate; cycloalkyl methacrylates, such as dicyclopentenyl methacrylate; cycloalkyl methacrylates, such as dicyclopentenyl methacrylate; and methacrylic acid. Imines; glycidyl acrylates containing glycidyl groups, such as glycidyl acrylate; hydroxyl-containing methacrylates such as methyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 3-hydroxypropyl methacrylate, 2-hydroxybutyl methacrylate, 3-hydroxybutyl methacrylate, and 4-hydroxybutyl methacrylate; and substituted amino acrylates such as N-methylaminoethyl methacrylate. Here, "substituted amino group" refers to a group whose structure has one or two hydrogen atoms of an amino group replaced by a group other than a hydrogen atom. Acrylic resins may also possess functional groups such as vinyl, (meth)acrylic, amino, hydroxyl, carboxyl, and isocyanate groups, which can bond with other compounds. These functional groups of acrylic resins can bond with other compounds via a crosslinking agent (F) described later, or they can bond directly with other compounds without a crosslinking agent (F). By bonding acrylic resins with other compounds via the aforementioned functional groups, there is a tendency to improve the reliability of encapsulations obtained, for example, using a thermosetting first protective film. In composition (III), regardless of the type of polymer component (A), the content of polymer component (A) relative to the total content of all components other than the solvent is preferably 5% to 25% by mass, more preferably 5% to 15% by mass. This is synonymous with the following: regardless of the type of polymer component (A), the content of polymer component (A) in the thermosetting first protective film forming film is preferably 5% to 25% by mass, more preferably 5% to 15% by mass, relative to the total mass of the thermosetting first protective film forming film. This is based on the fact that during the process of forming a resin film by removing the solvent from the resin composition containing the solvent, the amount of components other than the solvent usually does not change, and the content ratio of components other than the solvent is the same in both the resin composition and the resin film. Therefore, in this specification, the following is not limited to the case of the thermosetting first protective film forming film; the content of components other than the solvent is only described in the resin film after the solvent has been removed from the resin composition. Polymer component (A) sometimes also corresponds to thermosetting component (B). In this embodiment, when composition (III) contains such a component that corresponds to both polymer component (A) and thermosetting component (B), composition (III) is considered to contain both polymer component (A) and thermosetting component (B). [Thermosetting Component (B)] Thermosetting component (B) is a component that is thermosetting and is used to cause the thermosetting first protective film to thermoset. The thermosetting component (B) contained in the composition (III) and the thermosetting first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these thermosetting components (B) can be arbitrarily selected. Examples of thermosetting components (B) include epoxy thermosetting resins, thermosetting polyimide resins, and unsaturated polyester resins, with epoxy thermosetting resins being preferred. In this specification, the term "thermosetting polyimide resin" refers to the general term for polyimide precursors that form polyimide resins through thermosetting, and thermosetting polyimides themselves. [Epoxy Thermosetting Resin] The epoxy thermosetting resin is composed of epoxy resin (B1) and thermosetting agent (B2). The epoxy thermosetting resin contained in component (III) and the thermosetting first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these epoxy thermosetting resins can be arbitrarily selected. • Epoxy Resin (B1) As epoxy resin (B1), known epoxy resins can be cited, such as: multifunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenates, o-cresol phenolic varnish epoxy resin, dicyclopentadiene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenyl skeleton type epoxy resin, and other epoxy compounds with two or more functions. Epoxy resin (B1) can also be an epoxy resin with unsaturated hydrocarbon groups. Epoxy resins with unsaturated hydrocarbon groups have higher miscibility with acrylic resins compared to epoxy resins without unsaturated hydrocarbon groups. Therefore, by using epoxy resins with unsaturated hydrocarbon groups, there is a tendency to improve the reliability of encapsulations obtained by using, for example, a thermosetting first protective film. Examples of epoxy resins containing unsaturated hydrocarbon groups include compounds with structures in which a portion of the epoxy groups of a multifunctional epoxy resin are transformed into groups containing unsaturated hydrocarbon groups. Such compounds are obtained, for example, by an addition reaction of (meth)acrylic acid or a derivative thereof onto the epoxy groups. Other examples of epoxy resins containing unsaturated hydrocarbon groups include compounds with structures in which unsaturated hydrocarbon groups are directly bonded to aromatic rings or the like constituting the epoxy resin. The unsaturated hydrocarbon group is a polymerizable unsaturated group; specific examples of such unsaturated groups include: methinel (vinyl), 2-propenyl (allyl), (meth)acrylyl, (meth)acrylamide, etc., with acrylyl being preferred. The number-average molecular weight of the epoxy resin (B1) is not particularly limited, but in terms of the curability of the thermosetting first protective film and the strength and heat resistance of the cured product of the thermosetting first protective film (e.g., the first protective film), it is preferably 300 to 30,000, more preferably 400 to 10,000, and even more preferably 500 to 3,000. The epoxy equivalent of the epoxy resin (B1) is preferably 100 g / eq to 1,000 g / eq, more preferably 200 g / eq to 800 g / eq. Epoxy resin (B1) can be used alone or in combination with two or more types. When two or more types are used together, the combination and ratio of these epoxy resins (B1) can be arbitrarily selected. • Thermosetting Agent (B2) Thermosetting agent (B2) functions as a curing agent for epoxy resin (B1). Examples of thermosetting agents (B2) include compounds having two or more functional groups that can react with epoxy groups in one molecule. Examples of the aforementioned functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and groups formed by anhydride conversion of acid groups. Phenolic hydroxyl groups, amino groups, or groups formed by anhydride conversion of acid groups are preferred, and phenolic hydroxyl groups or amino groups are even more preferred. Among thermosetting agents (B2), examples of phenolic curing agents with phenolic hydroxyl groups include: polyfunctional phenolic resins, biphenol, phenolic varnish-type phenolic resins, dicyclopentadiene-type phenolic resins, and aralkyl-type phenolic resins. Among thermosetting agents (B2), examples of amine curing agents with amine groups include: dicyandiamide (hereinafter sometimes simply referred to as "DICY"). Thermosetting agent (B2) may also have unsaturated hydrocarbon groups. Examples of thermosetting agents (B2) with unsaturated hydrocarbon groups include compounds with a structure in which some hydroxyl groups of a phenolic resin are replaced by unsaturated hydrocarbon groups, and compounds with a structure in which unsaturated hydrocarbon groups are directly bonded to the aromatic ring of a phenolic resin. The aforementioned unsaturated hydrocarbon groups in thermosetting agent (B2) are the same as the unsaturated hydrocarbon groups in the epoxy resins mentioned above. In the thermosetting agent (B2), the average molecular weight of resin components such as polyfunctional phenolic resins, phenolic varnish-type phenolic resins, dicyclopentadiene-type phenolic resins, and aralkyl-type phenolic resins is preferably 300 to 30,000, more preferably 400 to 10,000, and even more preferably 500 to 3,000. The molecular weight of non-resin components in the thermosetting agent (B2), such as biphenol and dicyandiamide, is not particularly limited, but is preferably 60 to 500. The thermosetting agent (B2) can be used alone or in combination with two or more. When two or more are used together, the combination and ratio of these thermosetting agents (B2) can be arbitrarily selected. The content of the thermosetting agent (B2) in the thermosetting first protective film forming film is preferably 0.1 to 500 parts by weight, more preferably 1 to 200 parts by weight, relative to 100 parts by weight of epoxy resin (B1), for example, it can be any one of 5 to 150 parts by weight, 10 to 100 parts by weight, and 15 to 75 parts by weight. By having the aforementioned content of the thermosetting agent (B2) at or above the aforementioned lower limit, the thermosetting first protective film forming film becomes easier to cure. By having the aforementioned content of the thermosetting agent (B2) at or below the aforementioned upper limit, the moisture absorption rate of the thermosetting first protective film forming film is reduced, for example, the reliability of the encapsulation obtained using the thermosetting first protective film forming film is further improved. The content of the thermosetting component (B) in the thermosetting first protective film (e.g., the total content of epoxy resin (B1) and thermosetting agent (B2)) is preferably 600 to 1000 parts by mass relative to the content of polymer component (A). By using this range of content for the thermosetting component (B), the effect of suppressing the residue of the thermosetting first protective film on the upper part of the bump is enhanced when the thermosetting first protective film is attached to the aforementioned bump-forming surface, and a hard first protective film can be formed. Furthermore, to more significantly obtain this effect, the content of the thermosetting component (B) can be appropriately adjusted according to the type of polymer component (A). For example, when the polymer component (A) is the aforementioned polyvinyl acetal, the content of the thermosetting component (B) in the thermosetting first protective film forming film is 100 parts by mass, preferably 600 to 1000 parts by mass, more preferably 600 to 900 parts by mass, and even more preferably 600 to 800 parts by mass, relative to the content of the polymer component (A). [Curing Accelerator (C)] The curing accelerator (C) is a component used to adjust the curing speed of composition (III). Examples of preferred curing accelerators (C) include: tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole (imidazoles in which one or more hydrogen atoms are replaced by groups other than hydrogen atoms); organophosphorus compounds such as tributylphosphine, diphenylphosphine, and triphenylphosphine (phosphines in which one or more hydrogen atoms are replaced by organic groups); and tetraphenylboronic salts such as tetraphenylphosphonium tetraphenylboronic acid and triphenylphosphine tetraphenylboronic acid. The curing accelerator (C) contained in component (III) and the thermosetting first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these curing accelerators (C) can be arbitrarily selected. The content of the curing accelerator (C) in the thermosetting first protective film is preferably 0.01 to 10 parts by mass, and more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the thermosetting component (B). By having the aforementioned content of the curing accelerator (C) at or above the aforementioned lower limit, the effects of using the curing accelerator (C) can be more significantly obtained. By having the aforementioned content of the curing accelerator (C) at or below the aforementioned upper limit, for example, the effectiveness of inhibiting the segregation of highly polar curing accelerator (C) towards the bonding interface between the thermosetting first protective film and the substrate under high temperature and high humidity conditions is increased, and for example, the reliability of the encapsulation obtained using the thermosetting first protective film is further improved. [Fill Material (D)] By adjusting the amount of filler material (D) in composition (III) and the thermosetting first protective film forming film, the effect of suppressing the residue of the thermosetting first protective film forming film on the upper part of the bump can be adjusted when the thermosetting first protective film forming film is attached to the aforementioned bump forming surface. Furthermore, the coefficient of thermal expansion of the cured material (e.g., the first protective film) of the thermosetting first protective film forming film can be more easily adjusted. For example, by making the coefficient of thermal expansion of the first protective film most suitable for the object to which the first protective film is formed, the reliability of the package obtained using the thermosetting first protective film forming film is further improved. Additionally, as described later, when filling the trenches on the bump forming surface of the semiconductor wafer with the first protective film forming film in order to form the first protective film not only on the bump forming surface of the semiconductor wafer but also on the side surface, the degree of filling can be adjusted. In addition, by using a thermosetting first protective film forming film containing filler material (D), it is also possible to reduce the moisture absorption rate of the hardened material (e.g., the first protective film) of the thermosetting first protective film forming film or improve heat dissipation. The filler material (D) can be either an organic filler material or an inorganic filler material, preferably an inorganic filler material. Examples of preferred inorganic filler materials include: powders of silicon dioxide, alumina, talc, calcium carbonate, titanium dioxide, iron oxide, silicon carbide, boron nitride, etc.; beads formed by spheroidizing these inorganic filler materials; surface-modified products of these inorganic filler materials; single-crystal fibers of these inorganic filler materials; glass fibers, etc. Among these, silicon dioxide or alumina is preferred as the inorganic filler material. The filler material (D) contained in the composition (III) and the thermosetting first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these filler materials (D) can be arbitrarily selected. The content of filler material (D) in the thermosetting first protective film is preferably 5% to 45% by mass, more preferably 5% to 40% by mass, and even more preferably 5% to 30% by mass, relative to the total mass of the thermosetting first protective film. With the aforementioned proportions within this range, when the thermosetting first protective film is attached to the aforementioned bump forming surface, the effect of suppressing the residue of the thermosetting first protective film on the upper part of the bump becomes higher, and the aforementioned coefficient of thermal expansion can be more easily adjusted. [Additive (I)] By adjusting the type or amount of additive (I) in composition (III) and the thermosetting first protective film forming film, the effect of inhibiting the residue of the thermosetting first protective film forming film on the upper part of the bump can be adjusted when the thermosetting first protective film forming film is attached to the aforementioned bump forming surface. Among them, in terms of improving the effect of inhibiting the residue of the thermosetting first protective film forming film, preferred additives (I) include, for example, rheology control agents, surfactants, and silicone oils. More specifically, examples of rheology control agents include polyhydroxycarboxylic acid esters, polycarboxylic acids, and polyamide resins. Examples of surfactants include modified silicates and acrylic polymers. Examples of silicone oils include aralkyl-modified silicone oils and modified polydimethylsiloxanes, and examples of modifying groups include: aralkyl groups; polar groups such as hydroxyl groups; and groups with unsaturated bonds such as vinyl and phenyl groups. Other additives besides those mentioned above in Additive (I) may include, for example, plasticizers, antistatic agents, antioxidants, gettering agents, UV absorbers, adhesive agents, and other general-purpose additives. The additives (I) contained in the composition (III) and the thermosetting first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these additives (I) can be arbitrarily selected. The content of component (III) and additive (I) in the thermosetting first protective film forming film is not particularly limited, and can be appropriately adjusted according to the type or purpose of the aforementioned additive (I). For example, when the purpose is to adjust the effect of inhibiting the residue of the thermosetting first protective film forming film, the content of additive (I) in the thermosetting first protective film forming film relative to the total mass of the thermosetting first protective film forming film is preferably 0.5% to 10% by mass, more preferably 0.5% to 7% by mass, and even more preferably 0.5% to 5% by mass. [Coupling Agent (E)] Composition (III) and the thermosetting first protective film forming film may also contain a coupling agent (E). By using a compound having a functional group that can react with inorganic or organic compounds as the coupling agent (E), the adhesion and tightness of the thermosetting first protective film forming film to the substrate can be improved. In addition, by using the coupling agent (E), the water resistance of the cured product of the thermosetting first protective film forming film (e.g., the first protective film) is improved without compromising its heat resistance. The coupling agent (E) is preferably a compound having a functional group that can react with the functional groups of the polymer component (A), the thermosetting component (B), etc., and is more preferably a silane coupling agent. Examples of preferred silane coupling agents include: 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxymethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, and 3-(2-aminoethylamino)propyltrimethoxysilane. Silane, 3-(2-aminoethylamino)propylmethyldiethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-anilinepropyltrimethoxysilane, 3-ureopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfide, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, imidazole silane, etc. The coupling agent (E) contained in the composition (III) and the thermosetting first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these coupling agents (E) can be arbitrarily selected. When using a coupling agent (E), the content of the coupling agent (E) in the thermosetting first protective film is, for example, 0.03 to 20 parts by mass relative to 100 parts by mass of the total content of polymer component (A) and thermosetting component (B). By ensuring that the content of the coupling agent (E) is at or above the aforementioned lower limit, the following effects resulting from the use of the coupling agent (E) can be more significantly obtained: improved dispersibility of the filler material (D) in the resin, or improved adhesion between the thermosetting first protective film and the substrate. By ensuring that the content of the coupling agent (E) is below the aforementioned upper limit, the generation of gas escape can be further suppressed. [Crosslinker (F)] When a compound having functional groups such as vinyl, (meth)acrylic, amino, hydroxyl, carboxyl, or isocyanate groups that can bond with other compounds is used as polymer component (A), component (III) and the thermosetting first protective film forming film may also contain a crosslinker (F). The crosslinker (F) is a component used to crosslink the aforementioned functional groups in polymer component (A) by bonding with other compounds. By crosslinking in this way, the initial adhesion and cohesion of the thermosetting first protective film forming film can be adjusted. Examples of crosslinking agents (F) include: organic polyisocyanate compounds, organic polyimide compounds, metal chelate crosslinking agents (crosslinking agents with metal chelate structures), aziridine crosslinking agents (crosslinking agents with aziridine groups), etc. Examples of the aforementioned organic polyisocyanate compounds include: aromatic polyisocyanate compounds, aliphatic polyisocyanate compounds, and alicyclic polyisocyanate compounds (hereinafter, these compounds are sometimes collectively referred to as "aromatic polyisocyanate compounds, etc."); trimers, isocyanurates, and adducts of the aforementioned aromatic polyisocyanate compounds, etc.; and terminal isocyanate carbamate prepolymers of the aforementioned aromatic polyisocyanate compounds, etc., reacting with polyol compounds. The term "adduct" refers to the reaction product of the aforementioned aromatic polyisocyanate compounds, aliphatic polyisocyanate compounds, or alicyclic polyisocyanate compounds with ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane, or castor oil, etc., containing low-molecular-weight active hydrogen compounds. Examples of the aforementioned adducts include the phenylenedimethyl diisocyanate adduct of trimethylolpropane, as described below. In this specification, the term "terminated isocyanate carbamate prepolymer" means a prepolymer having carbamate bonds and isocyanate groups at the ends of the molecules. More specifically, examples of the aforementioned organic polyisocyanate compounds include: 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; 1,3-phenylenedimethyl diisocyanate; 1,4-xylene diisocyanate; diphenylmethane-4,4'-diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; hexamethylene diisocyanate; isophorone diisocyanate; dicyclohexylmethane-4,4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; compounds formed by the addition of one or more of toluene diisocyanate, hexamethylene diisocyanate, and phenylenedimethyl diisocyanate to all or part of the hydroxyl groups of polyols such as trimethylolpropane; lysine diisocyanate, etc. Examples of the aforementioned organic polyimide compounds include, for example, N,N'-diphenylmethane-4,4'-bis(1-aziridinium methylamine), trimethylolpropane-tri-β-aziridinium propionate, tetramethylolmethane-tri-β-aziridinium propionate, and N,N'-toluene-2,4-bis(1-aziridinium methylamine)triethyl melamine. When using an organic polyisocyanate compound as a crosslinking agent (F), it is preferable to use a hydroxyl-containing polymer as the polymer component (A). When the crosslinking agent (F) has isocyanate groups and the polymer component (A) has hydroxyl groups, the crosslinked structure can be easily introduced into the thermosetting first protective film by the reaction between the crosslinking agent (F) and the polymer component (A). The crosslinking agent (F) contained in the composition (III) and the thermosetting first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these crosslinking agents (F) can be arbitrarily selected. When a crosslinking agent (F) is used, the content of the crosslinking agent (F) in composition (III) relative to the content of polymer component (A) is, for example, 0.01 to 20 parts by mass. By having the aforementioned content of the crosslinking agent (F) at or above the aforementioned lower limit, the effects brought about by the use of the crosslinking agent (F) can be obtained more significantly. By having the aforementioned content of the crosslinking agent (F) at or below the aforementioned upper limit, the excessive use of the crosslinking agent (F) is suppressed. [Other Components] The composition (III) and the thermosetting first protective film may also contain other components not equivalent to any of the polymer component (A), thermosetting component (B), curing accelerator (C), filler material (D), additive (I), coupling agent (E), and crosslinking agent (F) described above, without impairing the effectiveness of the present invention. Examples of such other components include energy-line curing resins and photopolymerization initiators. The other components contained in Component (III) and the thermosetting first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these other components can be arbitrarily selected. The content of the aforementioned other components in Component (III) and the thermosetting first protective film is not particularly limited, and can be appropriately selected according to the purpose. [Soluble Medium] Component (III) preferably contains a solvent. The operability of component (III) containing a solvent improves. The aforementioned solvent is not particularly limited, but preferred solvents include, for example: hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds containing amide bonds) such as dimethylformamide and N-methylpyrrolidone. Component (III) may contain only one type of solvent or two or more types; in the case of two or more types, the combination and ratio of these solvents can be arbitrarily chosen. As a better solvent for composition (III), for example, methyl ethyl ketone can be used to mix the components contained in composition (III) more evenly. There is no particular limitation on the content of solvent in composition (III), for example, it can be selected appropriately according to the types of components other than solvent. In terms of improving the objective effect of the present invention (the high-speed adhesion of the first protective film forming sheet and the permeability of the first protective film forming film, as an example of a preferred thermosetting first protective film forming film, the following thermosetting first protective film forming film can be cited: containing a polymer component (A), a thermosetting component (B), a curing accelerator (C), a filler material (D), and an additive (I), and the total content of the aforementioned polymer component (A), the aforementioned thermosetting component (B), the aforementioned curing accelerator (C), the aforementioned filler material (D), and the aforementioned additive (I) in the aforementioned thermosetting first protective film forming film is 85% by mass or more, preferably 90% by mass or more, and more preferably 95% by mass or more, relative to the total mass of the aforementioned thermosetting first protective film forming film. In view of the above, as an example of a better thermosetting first protective film forming film, the following thermosetting first protective film forming film can be cited: containing a polymer component (A), a thermosetting component (B), a curing accelerator (C), a filler material (D), and an additive (I), wherein the aforementioned polymer component (A) is polyvinyl acetal, the aforementioned thermosetting component (B) is epoxy resin (B1) and a thermosetting agent (B2), and the aforementioned additive (I) is one or more selected from the group consisting of rheology control agents, surfactants, and silicone oils, wherein the total content of the aforementioned polymer component (A), the aforementioned thermosetting component (B), the aforementioned curing accelerator (C), the aforementioned filler material (D), and the aforementioned additive (I) in the aforementioned thermosetting first protective film forming film is 85% by mass or more, preferably 90% by mass or more, and more preferably 95% by mass or more. The thickness of these thermosetting first protective films is preferably 2 to 7 times, more preferably 3 to 6 times, relative to the thickness of the intermediate release layer. [Manufacturing Method of a Thermosetting First Protective Film Forming Composition] Composition (III) and the like are obtained by blending the components used to constitute the composition. There is no particular limitation on the order of addition when blending the components, and two or more components may be added simultaneously. There is no particular limitation on the method of mixing the components during blending; any suitable method may be selected from the following known methods: mixing by rotating a stir bar or stirring blade; mixing using a mixer; mixing by applying ultrasonic waves, etc. Regarding the temperature and time for adding and mixing the components, there are no particular limitations as long as the components are not degraded; appropriate adjustments may be made, with a preferred temperature of 15°C to 30°C. ○ Energy line hardening first protective film forming film As an energy line hardening first protective film forming film, for example, a film containing energy line hardening component (a), filler material and additives can be cited. Regarding the curing conditions for forming the first protective film by curing the energy-line hardening first protective film, there are no particular limitations on the degree of curing, as long as the first protective film achieves sufficient functionality. The appropriate condition can be selected based on the type of energy-line hardening first protective film. For example, the preferred energy illuminance during the curing of the energy-line hardening first protective film is 180 mW / cm². 2 Up to 280mW / cm 2 Furthermore, the optimal light intensity of the energy line during the aforementioned hardening process is 450 mJ / cm². 2 Up to 1000mJ / cm 2 . [Composition for forming the first protective film with energy line hardening] Examples of compositions for forming the first protective film with energy line hardening include composition (IV) containing an energy line hardening component (a), a filler material, and an additive (sometimes referred to as "composition (IV)" in this specification). [Energy Line Hardening Component (a)] Energy line hardening component (a) is a component that is hardened by irradiation with energy lines. This component is used to impart film-forming properties or flexibility to the energy line hardening first protective film. Energy line hardening component (a) is preferably unhardened, and more preferably has adhesive properties, and even more preferably is both unhardened and adhesive. Examples of energy line hardening components (a) include polymers (a1) having energy line hardening groups and a weight average molecular weight of 80,000 to 2,000,000, and compounds (a2) having energy line hardening groups and a molecular weight of 100 to 80,000. The aforementioned polymer (a1) may be at least partially cross-linked by a cross-linking agent, or it may not be cross-linked. [Polymer (a1) having an energy line hardening group and a weight average molecular weight of 80,000 to 2,000,000] As a polymer (a1) having an energy line hardening group and a weight average molecular weight of 80,000 to 2,000,000, acrylic resin (a1-1) can be exemplified for example. The acrylic resin (a1-1) has a structure formed by polymerizing an acrylic polymer (a11) and an energy line hardening compound (a12). The acrylic polymer (a11) has functional groups that can react with groups of other compounds. The energy line hardening compound (a12) has energy line hardening groups such as groups that react with the aforementioned functional groups and energy line hardening double bonds. Examples of functional groups that can react with other compounds include hydroxyl, carboxyl, amino, substituted amino groups (groups with one or two hydrogen atoms of an amino group replaced by groups other than hydrogen atoms), and epoxy groups. However, for the purpose of preventing circuit corrosion of semiconductor wafers or semiconductor chips, the aforementioned functional groups are preferably groups other than carboxyl. Among these, the aforementioned functional group is preferably hydroxyl. • Acrylic polymer with functional groups (a11) Examples of the aforementioned acrylic polymer with functional groups (a11) include polymers copolymerized from acrylic monomers having the aforementioned functional groups and acrylic monomers without the aforementioned functional groups, as well as polymers copolymerized from monomers other than acrylic monomers (non-acrylic monomers). Furthermore, the aforementioned acrylic polymer (a11) can be a random copolymer or a block copolymer. Examples of acrylic acid monomers having the aforementioned functional groups include monomers containing hydroxyl groups, monomers containing carboxyl groups, monomers containing amino groups, monomers containing substituted amino groups, and monomers containing epoxy groups. Examples of hydroxyl-containing monomers mentioned above include: hydroxymethyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 3-hydroxypropyl methacrylate, 2-hydroxybutyl methacrylate, 3-hydroxybutyl methacrylate, 4-hydroxybutyl methacrylate, and other hydroxyalkyl methacrylates; and non-(meth)acrylate unsaturated alcohols (unsaturated alcohols without a (meth)acrylate backbone) such as vinyl alcohol and allyl alcohol. Examples of the aforementioned carboxyl-containing monomers include: (meth)acrylic acid, butenoic acid, and other ethylene-unsaturated monocarboxylic acids (monocarboxylic acids with ethylene-unsaturated bonds); fumaric acid, iconic acid, maleic acid, citracic acid, and other ethylene-unsaturated dicarboxylic acids (dicarboxylic acids with ethylene-unsaturated bonds); anhydrides of the aforementioned ethylene-unsaturated dicarboxylic acids; and (meth)acrylic acid carboxylalkyl esters such as 2-carboxyethyl methacrylate. Acrylic acid monomers having the aforementioned functional groups are preferably monomers containing hydroxyl groups, monomers containing carboxyl groups, and more preferably monomers containing hydroxyl groups. The acrylic monomers having the aforementioned functional groups constituting the aforementioned acrylic polymer (a11) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these monomers may be arbitrarily selected. Examples of acrylic monomers that do not possess the aforementioned functional groups include: methyl methacrylate, ethyl methacrylate, n-propyl methacrylate, isopropyl methacrylate, n-butyl methacrylate, isobutyl methacrylate, dibutyl methacrylate, terbutyl methacrylate, pentyl methacrylate, hexyl methacrylate, heptyl methacrylate, 2-ethylhexyl methacrylate, isooctyl methacrylate, n-octyl methacrylate, n-nonyl methacrylate, and isononyl methacrylate. Alkyl esters, such as decyl methacrylate, undecyl methacrylate, dodecyl methacrylate (laurate methacrylate), tridecyl methacrylate, tetradecyl methacrylate (myristyl methacrylate), pentadecyl methacrylate, hexadecyl methacrylate (palmitoyl methacrylate), heptadecanyl methacrylate, and octadecyl methacrylate (stearyl methacrylate), are chain alkyl esters in which the alkyl group has a chain structure with 1 to 18 carbon atoms. Examples of acrylic monomers that do not possess the aforementioned functional groups include: methoxymethyl methacrylate, methoxyethyl methacrylate, ethoxymethyl methacrylate, ethoxyethyl methacrylate, and other alkoxyalkyl-containing (meth)acrylates; aromatic (meth)acrylates including aryl (meth)acrylates such as phenyl (meth)acrylate; non-crosslinked (meth)acrylamide and its derivatives; and non-crosslinked tertiary amino (meth)acrylates such as N,N-dimethylaminoethyl (meth)acrylate and N,N-dimethylaminopropyl (meth)acrylate. The acrylic monomers that do not have the aforementioned functional groups that constitute the aforementioned acrylic polymer (a11) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these monomers may be arbitrarily selected. Examples of non-acrylic monomers mentioned above include: olefins such as ethylene and norbornene; vinyl acetate; styrene, etc. The aforementioned non-acrylic monomers constituting the aforementioned acrylic polymer (a11) may be only one type or may be two or more types. In the case of two or more types, the combination and ratio of these monomers can be arbitrarily selected. In the aforementioned acrylic polymer (a11), the proportion (content) of the constituent units derived from the acrylic monomer having the aforementioned functional groups relative to the total amount of the constituent units constituting the aforementioned acrylic polymer (a11) is preferably 0.1% to 50% by mass, more preferably 1% to 40% by mass, and even more preferably 3% to 30% by mass. By using the aforementioned proportion within this range, the content of the energy-curing groups in the aforementioned acrylic resin (a1-1) obtained by copolymerizing the aforementioned acrylic polymer (a11) and the aforementioned energy-curing compound (a12) can be easily adjusted to a range that results in a better degree of curing of the cured material (e.g., the first protective film) forming the energy-curing first protective film. The acrylic polymer (a11) that constitutes the aforementioned acrylic resin (a1-1) may be only one type or may be two or more types. In the case of two or more types, the combination and ratio of these acrylic polymers (a11) may be arbitrarily selected. The content of acrylic resin (a1-1) in the energy line curing first protective film forming film is preferably 1% to 40% by mass, more preferably 2% to 30% by mass, and even more preferably 3% to 20% by mass relative to the total mass of the energy line curing first protective film forming film. • Energy line hardening compound (a12) Preferably, the aforementioned energy line hardening compound (a12) has one or more groups selected from the group consisting of isocyanate groups, epoxy groups, and carboxyl groups as functional groups that can react with the aforementioned acrylic polymer (a11), and more preferably has an isocyanate group as the aforementioned group. When the aforementioned energy line hardening compound (a12) has, for example, an isocyanate group as the aforementioned group, the isocyanate group readily reacts with the hydroxyl group of the acrylic polymer (a11) having a hydroxyl group as the aforementioned functional group. The aforementioned energy line hardening compound (a12) preferably has one to five aforementioned energy line hardening groups in one molecule, more preferably one to two. Examples of the aforementioned energy line hardening compound (a12) include: 2-methacryloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloxyisocyanate, allyl isocyanate, 1,1-(bisacryloxymethyl)ethyl isocyanate; acryloxymonoisocyanate compounds obtained by reacting a diisocyanate compound or a polyisocyanate compound with hydroxyethyl (meth)acrylate; and acryloxymonoisocyanate compounds obtained by reacting a diisocyanate compound or a polyisocyanate compound, a polyol compound, and hydroxyethyl (meth)acrylate. Among these, 2-methacryloxyethyl isocyanate is preferred. The energy-curing compound (a12) constituting the aforementioned acrylic resin (a1-1) may be only one type or may be two or more types. In the case of two or more types, the combination and ratio of these energy-curing compounds (a12) may be arbitrarily selected. In the aforementioned acrylic resin (a1-1), the content of the energy-curing group derived from the aforementioned energy-curing compound (a12) relative to the content of the aforementioned functional groups derived from the aforementioned acrylic polymer (a11) is preferably 20 mol% to 120 mol%, more preferably 35 mol% to 100 mol%, and even more preferably 50 mol% to 100 mol%. By using the aforementioned content range, the adhesion of the cured material (e.g., the first protective film) of the energy-curing first protective film becomes stronger. Furthermore, when the aforementioned energy-curing compound (a12) is a single-functional compound (having one of the aforementioned groups in one molecule), the upper limit of the aforementioned content ratio is 100 mol%, but when the aforementioned energy-curing compound (a12) is a multifunctional compound (having two or more of the aforementioned groups in one molecule), the upper limit of the aforementioned content ratio sometimes exceeds 100 mol. The weight average molecular weight (Mw) of the aforementioned polymer (a1) is preferably from 100,000 to 2,000,000, and more preferably from 300,000 to 1,500,000. When at least a portion of the aforementioned polymer (a1) is crosslinked by a crosslinking agent, the aforementioned polymer (a1) may be a monomer that does not correspond to any of the monomers constituting the aforementioned acrylic polymer (a11) as described above and has a group that reacts with the crosslinking agent, and is crosslinked in the group that reacts with the aforementioned crosslinking agent, or it may be a crosslinked group derived from the aforementioned energy line hardening compound (a12) that reacts with the aforementioned functional group. The aforementioned polymer (a1) contained in the composition (IV) and the energy line hardening first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these polymers (a1) can be arbitrarily selected. [Compounds having an energy-line hardening group and a molecular weight of 100 to 80,000 (a2)] Examples of the aforementioned energy-line hardening group in compounds having an energy-line hardening group and a molecular weight of 100 to 80,000 (a2) include groups containing energy-line hardening double bonds, and preferred examples of such groups include (meth)acrylic acid, vinyl, etc. The aforementioned compound (a2) is not particularly limited as long as it meets the above conditions. Examples include: low molecular weight compounds with energy-line hardening groups, epoxy resins with energy-line hardening groups, and phenolic resins with energy-line hardening groups. As a low molecular weight compound having an energy line hardening group in the aforementioned compound (a2), examples include multifunctional monomers or oligomers, preferably acrylate compounds having a (meth)acrylic group. Examples of the aforementioned acrylate compounds include: 2-hydroxy-3-(meth)acrylic acid propyl methacrylate, polyethylene glycol di(meth)acrylate, propoxylated ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4-((meth)acrylic acid polyethoxy)phenyl]propane, ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4-((meth)acrylic acid diethoxy)phenyl]propane, 9,9-bis[4-(2-(meth)acrylic acid diethoxy)phenyl]propane, etc. [Oxygenated]phenyl, 2,2-bis[4-((meth)acryloxy)polypropoxy)phenyl]propane, tricyclodecanediethanol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, polytetramethylene glycol di(meth)acrylate, ethylene glycol di(meth)acrylate Acrylates, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, 2,2-bis[4-((meth)propenyloxyethoxy)phenyl]propane, neopentyl glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 2-hydroxy-1,3-di(meth)propenyloxypropane and other difunctional (meth)acrylates; tris(2-(meth)propenyloxyethyl) isocyanurate, ε-caprolactone-modified tris(2-(meth)propenyloxyethyl) isocyanurate Multifunctional (meth)acrylates such as methyl methacrylate, ethoxylated glycerol tri(meth)acrylate, pentaerythritol tri(meth)acrylate, trimethylolpropane tri(meth)acrylate, di-trimethylolpropane tetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol poly(meth)acrylate, dipentaerythritol hexa(meth)acrylate; and multifunctional (meth)acrylate oligomers such as (meth)acrylate aminocarbamate oligomers. In the aforementioned compound (a2), the epoxy resin having a heat-curing group or the phenolic resin having a heat-curing group can be, for example, the resin described in paragraph 0043 of Japanese Patent Application Publication No. 2013-194102. Such a resin also conforms to the resin constituting the thermosetting component described later, but is regarded as the aforementioned compound (a2) in this embodiment. The weight-average molecular weight of the aforementioned compound (a2) is preferably from 100 to 30,000, and more preferably from 300 to 10,000. The composition (IV) and the energy line hardening first protective film forming film contain only one or more of the aforementioned compounds (a2). In the case of two or more compounds, the combination and ratio of these compounds (a2) can be arbitrarily selected. [Polymer (b) without energy line hardening groups] When the composition (IV) and the energy line hardening first protective film forming film contain the aforementioned compound (a2) as the aforementioned energy line hardening component (a), it is preferable that it also contains a polymer (b) without energy line hardening groups. The aforementioned polymer (b) may be at least partially crosslinked by a crosslinking agent, or it may not be crosslinked. Examples of polymers (b) that do not have energy-line hardening groups include: acrylic polymers, phenoxy resins, urethane resins, polyesters, rubber-based resins, and urethane resins. Among these, the aforementioned polymer (b) is preferably an acrylic polymer (hereinafter, sometimes simply referred to as "acrylic polymer (b-1)"). The acrylic polymer (b-1) can be a known acrylic polymer, such as a homopolymer of one acrylic monomer, a copolymer of two or more acrylic monomers, or a copolymer of one or more acrylic monomers with one or more monomers other than acrylic monomers (non-acrylic monomers). Examples of acrylic monomers constituting the acrylic polymer (b-1) include: alkyl (meth)acrylates, (meth)acrylates having a cyclic backbone, (meth)acrylates containing glycidyl groups, (meth)acrylates containing hydroxyl groups, and (meth)acrylates containing substituted amino groups. Here, "substituted amino groups" are as explained above. As an example of the aforementioned alkyl methacrylate, an alkyl methacrylate may be cited as being the same as the acrylic monomer (alkyl methacrylate, etc., in which the alkyl group constituting the acrylic polymer (a11) described above does not have the aforementioned functional group) that constitutes the alkyl methacrylate chain structure with 1 to 18 carbon atoms. Examples of (meth)acrylates having a cyclic skeleton include: isobornyl (meth)acrylate, dicyclopentyl (meth)acrylate, and other cycloalkyl (meth)acrylates; benzyl (meth)acrylate, and other aralkyl (meth)acrylates; dicyclopentenyl (meth)acrylate, and other cycloalkyl (meth)acrylates; dicyclopentenyl (meth)acrylate, and other cycloalkyl (meth)acrylates; dicyclopentenyl (meth)acrylate, and other cycloalkyl (meth)acrylates. Examples of (meth)acrylates containing glycidyl groups include glycidyl methacrylate. Examples of (meth)acrylates containing hydroxyl groups include hydroxymethyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 3-hydroxypropyl methacrylate, 2-hydroxybutyl methacrylate, 3-hydroxybutyl methacrylate, and 4-hydroxybutyl methacrylate. Examples of (meth)acrylates containing substituted amino groups include N-methylaminoethyl methacrylate. Examples of non-acrylic monomers that constitute the acrylic polymer (b-1) include, for example, olefins such as ethylene and norbornene; vinyl acetate; styrene, etc. As a polymer (b) that is at least partially cross-linked by a cross-linking agent and does not possess the aforementioned energy-line hardening group, an example could be a polymer formed by reacting the reactive functional groups of the aforementioned polymer (b) with the cross-linking agent. The aforementioned reactive functional groups can be appropriately selected based on the type of cross-linking agent, and are not particularly limited. For example, when the cross-linking agent is a polyisocyanate compound, examples of the aforementioned reactive functional groups include hydroxyl, carboxyl, and amino groups, among which hydroxyl groups, which have high reactivity with isocyanate groups, are preferred. Furthermore, when the cross-linking agent is an epoxy compound, examples of the aforementioned reactive functional groups include carboxyl, amino, and amide groups, among which carboxyl groups, which have high reactivity with epoxy groups, are preferred. However, in terms of preventing circuit corrosion of semiconductor wafers or semiconductor chips, the aforementioned reactive functional groups are preferably groups other than carboxyl groups. As a polymer (b) having the aforementioned reactive functional group but not a line-hardening group, a polymer obtained by polymerizing a monomer having at least the aforementioned reactive functional group can be cited as an example. In the case of the acrylic polymer (b-1), any one or both of the acrylic monomers and non-acrylic monomers mentioned above, which constitute the acrylic polymer (b-1), can be used, specifically a monomer having the aforementioned reactive functional group. As a polymer (b) having a hydroxyl group as a reactive functional group, a polymer obtained by polymerizing a hydroxyl-containing (meth)acrylate can be cited as an example. In addition, a polymer obtained by polymerizing a monomer having a structure in which one or more hydrogen atoms in the aforementioned acrylic monomers or non-acrylic monomers are replaced by the aforementioned reactive functional group can also be cited as an example. In the aforementioned polymer (b) having reactive functional groups, the ratio (content) of the amount of constituent units derived from monomers having reactive functional groups relative to the total amount of constituent units constituting the aforementioned polymer is preferably from 1% to 20% by mass, more preferably from 2% to 10% by mass. With the aforementioned ratio being within this range, the degree of crosslinking in the aforementioned polymer (b) becomes a more favorable range. Regarding the better film-forming properties of composition (IV), the weight average molecular weight (Mw) of the polymer (b) without energy line hardening groups is preferably from 10,000 to 2,000,000, and more preferably from 100,000 to 1,500,000. The polymer (b) contained in the composition (IV) and the energy line hardening first protective film forming film may be only one type or two or more types. In the case of two or more types, the combination and ratio of these polymers (b) may be arbitrarily selected. As a composition (IV), examples include compositions containing either or both of the aforementioned polymer (a1) and compound (a2). Furthermore, when composition (IV) contains compound (a2), it is preferable that it also contains a polymer (b) without a line-hardening group; in this case, it is also preferable that it contains (a1). Alternatively, composition (IV) may not contain compound (a2) and may contain both the aforementioned polymer (a1) and polymer (b) without a line-hardening group. When composition (IV) contains the aforementioned polymer (a1), the aforementioned compound (a2), and a polymer (b) without a power line hardening group, the content of the aforementioned compound (a2) in composition (IV) relative to the total content of the aforementioned polymer (a1) and the polymer (b) without a power line hardening group is 10 parts by mass to 400 parts by mass, and more preferably 30 parts by mass to 350 parts by mass. The total content of the aforementioned energy-curing component (a) and the polymer (b) without energy-curing groups in the energy-curing first protective film forming membrane is preferably 5% to 90% by mass, more preferably 10% to 80% by mass, and even more preferably 20% to 70% by mass, relative to the total mass of the energy-curing first protective film forming membrane. By using the aforementioned proportions within this range, the energy-curing properties of the energy-curing first protective film forming membrane are improved. [Filling Material] By adjusting the amount of filler material in the composition (IV) and the energy line curing first protective film forming film, the effect of suppressing the residue of the energy line curing first protective film forming film on the upper part of the bump can be adjusted when the energy line curing first protective film forming film is attached to the aforementioned bump forming surface. Furthermore, the coefficient of thermal expansion of the cured material (e.g., the first protective film) of the energy line curing first protective film forming film can be more easily adjusted. For example, by making the coefficient of thermal expansion of the first protective film most suitable for the object to which the first protective film is formed, the reliability of the package obtained using the energy line curing first protective film forming film is further improved. Additionally, as described later, when filling the trenches on the bump forming surface of the semiconductor wafer with the first protective film forming film to form the first protective film not only on the bump forming surface of the semiconductor wafer but also on the side surface, the degree of filling can be adjusted. In addition, by using a first protective film with energy line curing material to form a film, it is possible to reduce the moisture absorption rate of the hardened material (e.g., the first protective film) of the first protective film with energy line curing material or improve heat dissipation. The filler material contained in composition (IV) and the energy line curing first protective film forming film is the same as the filler material (D) contained in composition (III) and the thermosetting first protective film forming film described above. The state in which composition (IV) and the energy line curing first protective film form containing filler material are the same as the state in which composition (III) and the thermosetting first protective film form containing filler material (D) are contained. The filler material contained in the composition (IV) and the energy line hardening first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these filler materials can be arbitrarily selected. The content of the filler material in the energy line hardening first protective film forming film, relative to the total mass of the energy line hardening first protective film forming film, can be, for example, 5% to 45% by mass. By using the aforementioned ratio within this range, when the energy line hardening first protective film forming film is attached to the aforementioned bump forming surface, the effect of suppressing the energy line hardening first protective film forming film residue on the upper part of the bump becomes higher, and the aforementioned coefficient of thermal expansion can be more easily adjusted. [Additives] By adjusting the type or amount of additives in the composition (IV) and the energy line hardening first protective film forming film, when the energy line hardening first protective film forming film is attached to the aforementioned bump forming surface, the effect of suppressing the energy line hardening first protective film forming film residue on the upper part of the bump can be adjusted. The additives contained in composition (IV) and the energy line curing first protective film forming film are the same as those contained in composition (III) and the thermosetting first protective film forming film described above. For example, in terms of making it easier to adjust the above-mentioned effect of inhibiting the residue of the energy line curing first protective film forming film, preferred additives include rheology control agents, surfactants, and silicone oils. The composition (IV) and the energy line curing first protective film forming film containing additives can be the same as the composition (III) and the thermosetting first protective film forming film containing additives (I). The additives contained in the composition (IV) and the energy line hardening first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these additives can be arbitrarily selected. The content of additives in composition (IV) and the energy line hardening first protective film forming film is not particularly limited, and can be appropriately adjusted according to the type or purpose of the aforementioned additives. For example, when the purpose is to adjust the effect of inhibiting the residue of the energy line hardening first protective film forming film, the ratio of the content of additives in the energy line hardening first protective film forming film to the total mass of the energy line hardening first protective film forming film can be, for example, 0.5% by mass to 10% by mass. [Other Components] The composition (IV) and the energy line curing first protective film forming film may also contain other components not equivalent to any of the energy line curing component (a), the aforementioned filler material, the aforementioned additives, and the polymer (b) without an energy line curing group, without impairing the effectiveness of the present invention. Examples of such other components include: thermosetting components, photopolymerization initiators, coupling agents, crosslinking agents, etc. For example, by using the composition (IV) containing the aforementioned energy line curing component (a) and thermosetting component, the energy line curing first protective film forming film exhibits increased adhesion to the substrate upon heating, and the strength of the cured product (e.g., the first protective film) of the energy line curing first protective film forming film is also increased. Examples of compounds that are the same as the thermosetting component (B), photopolymerization initiator, coupling agent, and crosslinking agent in composition (III), respectively, can be cited as components in composition (III) that are the same as the thermosetting component (B), photopolymerization initiator, coupling agent (E), and crosslinking agent (F). The other components contained in Composition (IV) and the energy line hardening first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these other components can be arbitrarily selected. There is no particular limitation on the content of the aforementioned other components in Composition (IV) and the energy line hardening first protective film; they can be selected appropriately according to the purpose. [Soluble Medium] Composition (IV) preferably contains a solvent. Composition (IV) containing a solvent has good operability. Examples of solvents contained in composition (IV) include those identical to those contained in composition (III) described above. Composition (IV) may contain only one solvent or two or more solvents; in the case of two or more solvents, the combination and ratio of these solvents can be arbitrarily chosen. The content of the solvent in composition (IV) is not particularly limited; it can be appropriately selected based on the types of components other than the solvent. In terms of improving the objective effect of the present invention (the high-speed adhesion of the first protective film forming sheet and the permeability of the first protective film forming film, as an example of a preferred energy line curing first protective film forming film, the following energy line curing first protective film forming film can be cited: containing an energy line curing component (a), a filler material, and an additive, and the total content of the aforementioned energy line curing component (a), the aforementioned filler material, and the aforementioned additive in the aforementioned energy line curing first protective film forming film relative to the total mass of the aforementioned energy line curing first protective film forming film is 85% by mass or more, preferably 90% by mass or more, and more preferably 95% by mass or more. In view of the above, as an example of a better energy line curing first protective film forming film, the following energy line curing first protective film forming film can be cited: containing an energy line curing component (a), a polymer (b) without an energy line curing group, a filler material, and an additive, wherein the aforementioned energy line curing component (a) is either or both of a polymer (a1) having an energy line curing group and a weight average molecular weight of 80,000 to 2,000,000, and a compound (a2) having an energy line curing group and a molecular weight of 100 to 80,000, and the aforementioned polymer (b) without an energy line curing group is selected from acrylic acid polymers. The additives are selected from one or more of the group consisting of phenoxy resins, urethane resins, polyesters, rubber-based resins, and acrylate urethane resins. The additives are selected from one or more of the group consisting of rheology control agents, surfactants, and silicone oils. The total content of the energy-line curing component (a), the polymer (b) without energy-line curing groups, the filler material, and the additives in the energy-line curing first protective film forming film is 85% by mass or more, preferably 90% by mass or more, and more preferably 95% by mass or more. The thickness of these energy-line curing first protective films is preferably 2 to 7 times, more preferably 3 to 6 times, relative to the thickness of the intermediate release layer. [Manufacturing Method of a Composition for Forming an Energy Line Curing First Protective Film] Composition (IV) and other compositions for forming an energy line curing first protective film are obtained by blending the components used to constitute the composition. For example, except for differences in the types of blended components, compositions for forming an energy line curing first protective film can be manufactured using the same method as those for forming thermosetting first protective films described above. ○ Non-curing first protective film forming film As a non-curing first protective film forming film, for example, a film containing thermoplastic resin, filler material and additives can be cited. [Composition (V) for forming a non-curing first protective film] Examples of compositions for forming a non-curing first protective film include compositions (V) containing thermoplastic resin, filler material, and additives (sometimes referred to as "composition (V)" in this specification). [Thermoplastic Resin] The aforementioned thermoplastic resin is not particularly limited. More specifically, examples of the aforementioned thermoplastic resin include, for instance, non-curing resins such as polyvinyl acetal, acrylic resin, urethane resin, phenoxy resin, silicone resin, and saturated polyester resin, which are included as components (III) above. The thermoplastic resin contained in the composition (V) and the non-curing first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these thermoplastic resins can be arbitrarily selected. The content of the aforementioned thermoplastic resin in the non-curing first protective film is preferably 25% to 75% by mass relative to the total mass of the non-curing first protective film. [Filling Material] The non-curable first protective film forming film containing filler material has the same effect as the thermocurable first protective film forming film containing filler material (D). As a filler material contained in composition (V) and the non-curable first protective film forming film, an example can be a filler material that is the same as that contained in composition (III) and the thermocurable first protective film forming film (D). The filler material contained in the composition (V) and the non-hardening first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these filler materials can be arbitrarily selected. The content of the filler material in the non-curing first protective film is preferably 15% to 70% by mass relative to the total mass of the non-curing first protective film. By using this range of proportions, similar to the case using composition (III), when the non-curing first protective film is attached to the aforementioned bump forming surface, the effectiveness of suppressing the residue of the non-curing first protective film on the upper part of the bump becomes higher, and it becomes easier to adjust the coefficient of thermal expansion of the non-curing first protective film and the first protective film. Furthermore, as described later, since the first protective film is formed not only on the bump forming surface of the semiconductor wafer but also on the side surface, it can be sufficiently filled when filling the trenches on the bump forming surface of the semiconductor wafer with the non-curing first protective film. [Additives] By adjusting the type or amount of additives in the composition (V) and the non-hardening first protective film forming film, when the non-hardening first protective film forming film is attached to the aforementioned bump forming surface, the effect of suppressing the non-hardening first protective film forming film from remaining on the upper part of the bump can be adjusted. The additives contained in composition (V) and the non-curing first protective film forming film are the same as those contained in composition (III) and the thermosetting first protective film forming film described above. For example, in terms of making it easier to adjust the above-mentioned effect of inhibiting the residue of the non-curing first protective film forming film, rheology control agents, surfactants, silicone oils, etc., are preferred additives. The composition (V) and the non-curable first protective film forming film containing additives can be the same as the composition (III) and the thermocurable first protective film forming film containing additives (I). The additives contained in the composition (V) and the non-hardening first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these additives can be arbitrarily selected. The content of the additives in the composition (V) and the non-curing first protective film forming film is not particularly limited and can be appropriately adjusted according to the type or purpose of the aforementioned additives. For example, when the purpose is to adjust the effect of inhibiting the residue of the non-curing first protective film forming film, the ratio of the content of the additives in the non-curing first protective film forming film to the total mass of the non-curing first protective film forming film can be, for example, 0.5% by mass to 10% by mass. [Other Components] The composition (V) and the non-curing first protective film may also contain other components that are not equivalent to any of the thermoplastic resin, filler material, and additives, without impairing the effectiveness of the present invention. The aforementioned other components are not particularly limited and may be selected arbitrarily according to the purpose. The other components contained in composition (V) and the non-curing first protective film can be only one type or two or more types. In the case of two or more types, the combination and ratio of these other components can be arbitrarily selected. The content of the aforementioned other components in composition (V) and the non-curing first protective film is not particularly limited, and can be appropriately selected according to the purpose. [Soluble Medium] Composition (V) preferably contains a solvent. The operability of composition (V) containing a solvent is improved. For example, the solvent contained in composition (V) may be the same as the solvent contained in composition (III) described above. Composition (V) may contain only one type of solvent or two or more types of solvent; in the case of two or more types, the combination and ratio of these solvents can be arbitrarily chosen. The content of the solvent in composition (V) is not particularly limited; it can be appropriately selected based on the types of components other than the solvent. In terms of improving the objective effect of the present invention (the high-speed adhesion of the first protective film forming sheet and the permeability of the first protective film forming film, as a preferred example of a non-curing first protective film forming film, the following non-curing first protective film forming film can be cited: containing thermoplastic resin, filler material, and additives, and the total content of the aforementioned thermoplastic resin, the aforementioned filler material, and the aforementioned additives in the aforementioned non-curing first protective film forming film relative to the total mass of the aforementioned non-curing first protective film forming film is 85% by mass or more, preferably 90% by mass or more, and more preferably 95% by mass or more. In the above respects, as an example of a better non-curing first protective film forming film, the following non-curing first protective film forming film can be cited: It contains a thermoplastic resin, a filler material, and an additive, wherein the aforementioned thermoplastic resin is one or more selected from the group consisting of polyvinyl acetal, acrylic resin, urethane resin, phenoxy resin, silicone resin, and saturated polyester resin; the aforementioned additive is one or more selected from the group consisting of rheology control agents, surfactants, and silicone oil; and the total content of the aforementioned thermoplastic resin, the aforementioned filler material, and the aforementioned additive in the aforementioned non-curing first protective film forming film is 85% by mass or more, preferably 90% by mass or more, and more preferably 95% by mass or more, relative to the total mass of the aforementioned non-curing first protective film forming film. The thickness of these non-curing first protective film forming films is preferably 2 to 7 times, more preferably 3 to 6 times, relative to the thickness of the intermediate release layer. [Manufacturing Method of Non-curable First Protective Film Forming Composition] The non-curable first protective film forming composition (V) is obtained by blending the components used to constitute the composition. The non-curable first protective film forming composition can be manufactured using the same method as the thermosetting first protective film forming composition described above, except for differences in the types of blended components. ◎Intermediate Release Layer By containing EVA, the aforementioned intermediate release layer enhances the embedding properties of the bumps in the first protective film forming film when the first protective film forming sheet is attached to the bump forming surface of the semiconductor wafer. This enables high-speed attachment of the first protective film forming sheet to the bump forming surface of the semiconductor wafer. In this specification, the characteristic enabling high-speed attachment of the first protective film forming sheet is sometimes referred to as "high-speed attachment capability." Furthermore, by containing EVA, the aforementioned intermediate release layer achieves strong pressing of the first protective film forming film using the buffer layer when the first protective film forming sheet is attached to the bump forming surface of the semiconductor wafer. This ensures that even during high-speed attachment of the first protective film forming sheet, the top of the bumps can protrude from the first protective film forming film, thereby suppressing the residue of the first protective film forming film on the top of the bumps. In this specification, the characteristic that the first protective film forming film in the first protective film forming sheet is able to suppress the residue on the top of the bump and that the top of the bump can easily protrude is sometimes referred to as "penetration". Since EVA has the property of softening moderately when heated, the aforementioned effects (that is, the first protective film forming sheet has high-speed adhesion and the first protective film forming film has penetration) are particularly evident when the first protective film forming sheet is heated and applied at the same time. The first protective film forming sheet of this embodiment, by having an intermediate release layer, can exhibit the above-mentioned excellent effects regardless of the type of the first protective film forming film. The intermediate release layer contains ethylene-vinyl acetate copolymer (EVA), or may contain only ethylene-vinyl acetate copolymer (in other words, it may be a layer composed of ethylene-vinyl acetate copolymer), or may contain ethylene-vinyl acetate copolymer and other components other than ethylene-vinyl acetate copolymer. The intermediate peeling layer is in the form of sheets or films. The intermediate peeling layer can be a single layer or multiple layers, including two or more. In the case of multiple layers, these layers can be the same or different from each other, and there are no particular restrictions on the combination of these multiple layers. The thickness of the intermediate release layer is preferably 5 μm to 30 μm, more preferably 6 μm to 25 μm, and even more preferably 7 μm to 20 μm. Here, the term "thickness of the intermediate release layer" refers to the overall thickness of the intermediate release layer. For example, the thickness of an intermediate release layer composed of multiple layers refers to the total thickness of all the layers constituting the intermediate release layer. [Composition for Forming an Intermediate Release Layer] The intermediate release layer can be formed using a composition for forming an intermediate release layer containing the constituent material of the intermediate release layer. For example, the composition for forming an intermediate release layer can be formed by applying it to the surface to which the intermediate release layer is to be formed and drying it as needed. A more specific method for forming the intermediate release layer will be described in detail later along with methods for forming other layers. The ratio of the content of components in the composition for forming the intermediate release layer that do not vaporize at room temperature is generally the same as the ratio of the content of the aforementioned components in the intermediate release layer. In the intermediate release layer, the total content of one or more of the ingredients described below in the intermediate release layer does not exceed 100% by mass relative to the total mass of the intermediate release layer. Similarly, in the composition for forming the intermediate release layer, the total content of one or more of the ingredients described below in the composition for forming the intermediate release layer does not exceed 100% by mass relative to the total mass of the composition for forming the intermediate release layer. The composition for forming the intermediate release layer can be applied using the same method as the composition for forming the first protective film described above. There are no particular limitations on the drying conditions for the composition for forming the intermediate release layer. However, when the composition for forming the intermediate release layer contains the solvent described later, it is preferable to perform heat drying. Furthermore, the composition for forming the intermediate release layer containing the solvent is preferably heat-dried, for example, at 70°C to 130°C for 10 seconds to 5 minutes. [Composition (VII) for forming intermediate release layer] Examples of compositions for forming intermediate release layer include composition (VII) containing ethylene-vinyl acetate copolymer (EVA) (sometimes referred to simply as "composition (VII)" in this specification). The aforementioned composition (VII) may also contain ethylene-vinyl acetate copolymer and other components besides ethylene-vinyl acetate copolymer. In the ethylene-vinyl acetate copolymer, the ratio of the amount (parts by mass) of the constituent units derived from vinyl acetate to the total amount (parts by mass) of the constituent units (the total amount of all constituent units constituting the ethylene-vinyl acetate copolymer, hereinafter the same) ([amount (parts by mass) of the constituent units derived from vinyl acetate constituting the ethylene-vinyl acetate copolymer] / [total amount (parts by mass) of all constituent units constituting the ethylene-vinyl acetate copolymer] × 100) is preferably 16% by mass or more, more preferably 17.5% by mass or more, and even more preferably 19% by mass or more, for example, it can be any one of 25% by mass or more and 30% by mass or more. By having the aforementioned ratio at or above the aforementioned lower limit value, the high-speed adhesion of the first protective film forming sheet and the permeability of the first protective film forming film become higher. In this specification, the ratio of the amount (parts by mass) of the constituent units derived from vinyl acetate in the ethylene-vinyl acetate copolymer to the total amount (parts by mass) of the constituent units is sometimes referred to as "VA content". In the ethylene-vinyl acetate copolymer, the ratio (parts by mass) of the constituent units derived from vinyl acetate to the total amount (parts by mass) of the constituent units (VA content) is preferably 40% by mass or less, more preferably 37% by mass or less, and even more preferably 34% by mass or less, for example, it can be any one of 30% by mass or less and 25% by mass or less. By keeping the aforementioned ratio below the aforementioned upper limit, the operability of the composition (VII) is further improved, and it is easier to form the first protective film. In ethylene-vinyl acetate copolymers, the ratio (parts by mass) of the constituent units derived from vinyl acetate to the total amount (parts by mass) of the constituent units (VA content) can be suitably adjusted to a range set by any combination of the aforementioned lower and upper limits. For example, the aforementioned ratio is preferably 16% to 40% by mass, more preferably 17.5% to 37% by mass, and even more preferably 19% to 34% by mass, for example, it can be any of 25% to 34% by mass and 30% to 34% by mass, or any of 19% to 30% by mass and 19% to 25% by mass. However, these are just examples of the aforementioned ratios. The weight-average molecular weight of the aforementioned ethylene-vinyl acetate copolymer is preferably 200,000 or less, more preferably 180,000 or less, and even more preferably 160,000 or less, for example, it can be any one of 100,000 or less and 60,000 or less. By having the aforementioned weight-average molecular weight below the aforementioned upper limit, the high-speed adhesion of the first protective film forming sheet and the permeability of the first protective film forming film become higher. There is no particular limitation on the lower limit of the weight average molecular weight of the aforementioned ethylene-vinyl acetate copolymer. For example, in terms of improving the film-forming properties of composition (VII), the aforementioned weight average molecular weight may be 5000 or higher. The weight-average molecular weight of the aforementioned ethylene-vinyl acetate copolymer may be, for example, any one of 5,000 to 200,000, 5,000 to 180,000, 5,000 to 160,000, 5,000 to 100,000, and 5,000 to 60,000. However, these are just examples of the aforementioned weight-average molecular weight. The ethylene-vinyl acetate copolymer is preferably the main component of the intermediate release layer. This improves the high-speed adhesion of the first protective film forming sheet and the permeability of the first protective film formed film. In particular, the ratio of the ethylene-vinyl acetate copolymer content in the intermediate release layer to the total mass of the intermediate release layer ([content of ethylene-vinyl acetate copolymer in the intermediate release layer (parts by mass)] / [total mass of the intermediate release layer (parts by mass)] × 100) is preferably 80% by mass or more, more preferably 90% by mass or more, for example, any one of 95% by mass or more, 97% by mass or more, and 99% by mass or more. By having the aforementioned ratio at or above the aforementioned lower limit, the high-speed adhesion of the first protective film forming sheet and the permeability of the first protective film formed film are further improved. The aforementioned ratio is 100% by mass or less. [Other Components] There are no particular limitations on the other components mentioned above contained in composition (VII) and the intermediate release layer, and they may be selected appropriately according to the purpose. The other components contained in composition (VII) and the intermediate release layer may be only one type or two or more types. In the case of two or more types, the combination and ratio of these other components may be arbitrarily selected. Other components included in composition (VII) and the intermediate release layer may include, for example, non-polar resins such as ethylene polymers. The aforementioned ethylene polymers are polymers having at least ethylene-derived constituent units, and may be homopolymers of ethylene or copolymers of ethylene with other monomers. Examples of homopolymers of the aforementioned ethylene (i.e., polyethylene) include: low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), metallocene linear low-density polyethylene (mLLDPE), medium-density polyethylene (MDPE), and high-density polyethylene (HDPE). The aforementioned ethylene-based polymers and other non-polar resins can be oily components such as paraffin oil and paraffin. Other components mentioned above that are included in composition (VII) include solvents. Composition (VII) containing solvents has excellent operability. Examples of solvents contained in composition (VII) include: hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds with amide bonds) such as dimethylformamide and N-methylpyrrolidone. Composition (VII) may contain only one type of solvent or two or more types of solvents. In the case of two or more types of solvents, the combination and ratio of these solvents can be arbitrarily selected. The content of the aforementioned other components in composition (VII) and the intermediate stripping layer may be appropriately adjusted according to the types of the aforementioned other components. When the aforementioned other components are components other than the solvent, the ratio of the content of the aforementioned other components (components other than the solvent) in the intermediate release layer to the total mass of the intermediate release layer ([content of the aforementioned other components other than the solvent in the intermediate release layer (parts by mass)] / [total mass of the intermediate release layer (parts by mass)]×100) is preferably 20% by mass or less, more preferably 10% by mass or less, for example, it can be any one of 5% by mass or less, 3% by mass or less, and 1% by mass or less. By having the aforementioned ratio below the aforementioned upper limit, the high-speed adhesion of the first protective film forming sheet and the permeability of the first protective film forming film are further improved. When the aforementioned other components are components other than the solvent, the aforementioned ratio is 0% by mass or more. When the aforementioned other components are solvents, the ratio of the content of the aforementioned other components (solvents) in composition (VII) to the total mass of composition (VII) ([content of solvent in composition (VII) (parts by mass)] / [total mass of composition (VII) (parts by mass)]×100) is preferably 5% to 50% by mass, for example, it can be any one of 5% to 35% by mass and 5% to 20% by mass. By setting the aforementioned ratio to the aforementioned lower limit or above, the operability of composition (VII) is further improved. By setting the aforementioned ratio to the aforementioned upper limit or below, the first protective film can be formed more efficiently. In terms of improving the objective effects of the present invention (high-speed adhesion of the first protective film forming sheet and the permeability of the first protective film forming film), as an example of a preferred intermediate release layer, the following intermediate release layer can be cited: containing an ethylene-vinyl acetate copolymer, wherein the content of the aforementioned ethylene-vinyl acetate copolymer in the aforementioned intermediate release layer is 80% by mass or more, preferably 90% by mass or more, relative to the total mass of the aforementioned intermediate release layer; in the aforementioned ethylene-vinyl acetate copolymer, the amount of constituent units derived from vinyl acetate is 16% by mass to 40% by mass relative to the total amount of constituent units; and the weight average molecular weight of the aforementioned ethylene-vinyl acetate copolymer is 200,000 or less. [Manufacturing Method of Composition for Forming Intermediate Release Layer] Composition (VII) and other compositions for forming intermediate release layers are obtained by blending the various components used to constitute the composition. For example, except for the difference in the types of blended components, compositions for forming intermediate release layers can be manufactured using the same method as those for compositions for forming thermosetting first protective films described above. ◎ Buffer Layer The aforementioned buffer layer has a buffering effect on the forces applied to the buffer layer and the layers adjacent to the buffer layer. Here, "layers adjacent to the buffer layer" includes the intermediate peeling layer, the first protective film forming film, and the first protective film. There are no particular limitations on the material of the buffer layer, but resin is preferred. As a preferred buffer layer, for example, a layer formed by a buffer layer forming composition containing amino carbamate (meth) acrylate can be used. The buffer layer can be a single layer or multiple layers, including two or more. In the case of multiple layers, these layers can be the same or different from each other, and there are no particular restrictions on the combination of these multiple layers. The thickness of the buffer layer is preferably from 150 μm to 1000 μm, more preferably from 150 μm to 800 μm, even more preferably from 200 μm to 600 μm, and particularly preferably from 250 μm to 500 μm. Here, the term "thickness of the buffer layer" refers to the overall thickness of the buffer layer. For example, the thickness of a buffer layer composed of multiple layers refers to the total thickness of all the layers constituting the buffer layer. [Composition for Forming a Buffer Layer] The buffer layer can be formed using a composition for forming a buffer layer containing the material used to form the buffer layer. For example, the composition for forming a buffer layer is applied to the surface to which the buffer layer is to be formed, and then dried as needed, thereby forming the buffer layer. When the composition for forming a buffer layer has energy line hardening properties as described below, it is preferable to further harden the applied composition for energy line hardening. A more specific method for forming the buffer layer will be described in detail later along with methods for forming other layers. In the composition for forming a buffer layer, the total content of one or more of the components described below in the composition for forming a buffer layer is not more than 100% by mass relative to the total mass of the composition for forming a buffer layer. The composition for forming the buffer layer can be applied using the same method as the composition for forming the first protective film described above. There are no particular limitations on the drying conditions for the composition for forming the buffer layer; for example, they can be the same as the drying conditions for the composition for forming the intermediate release layer described above. When the energy line hardening buffer layer is formed using the composition, the optimal illuminance of the energy line during energy line hardening is 100 mW / cm². 2 Up to 350mW / cm 2 The optimal light intensity of the energy line is 200 mJ / cm². 2 Up to 1400mJ / cm 2 The energy line curing of the composition for forming the energy line hardening buffer layer can be performed in one step or in multiple steps (via semi-curing). When energy line curing is performed in multiple steps, it is preferable that the light intensity of the energy line in all steps is 200 mJ / cm². 2 Up to 1400mJ / cm 2 Preferably, the total light intensity for all cycles is 200 mJ / cm². 2 Up to 1400mJ / cm 2 . [Composition for forming a buffer layer (VI)] Examples of compositions for forming a buffer layer include compositions (VI) containing urethane (meth)acrylate (X) (which are sometimes simply referred to as "composition (VI)" in this specification). The [Aminocarbamate (Meth)acrylate (X)] composition (VI) contains an aminocarbamate (meth)acrylate (X) compound having at least a (meth)acrylic group and an aminocarbamate bond, and possesses the property of being polymerized by energy line irradiation. That is, composition (VI) has energy line hardening properties. The number of (meth)acrylic groups in the aforementioned aminocarbamate (meth)acrylate (X) can be any of 1, 2, or 3 or more (that is, aminocarbamate (meth)acrylate (X) can be monofunctional, difunctional, or trifunctional or more), but is preferably monofunctional aminocarbamate (meth)acrylate (X). Monofunctional aminocarbamate (meth)acrylate (X) does not participate in the formation of a three-dimensional network structure in the polymerization structure, and therefore it is not easy for the buffer layer to form a three-dimensional network structure. In this case, the first protective film forming sheet easily follows the bump forming surface of the semiconductor wafer. The composition (VI) may contain only one type of carbamate (meth)acrylate (X) or two or more types. In the case of two or more types, the combination and ratio of these carbamate (meth)acrylates (X) can be arbitrarily selected. As an example of the aforementioned urethane (meth)acrylate (X), a reactant formed from a terminal isocyanate urethane prepolymer as a reactant of a polyol compound (x1) and a polyisocyanate compound (x2), and a compound (x3) having a (meth)acrylic group. Here, "terminated isocyanate urethane prepolymer" is as explained above. The aforementioned polyol compound (x1) is not particularly limited as long as it has two or more hydroxyl groups in one molecule. Examples of polyol compounds (x1) include: alkyl glycols, polyether polyols, polyester polyols, and polycarbonate polyols. Among these, polyether polyols are preferred. The polyol compound (x1) can be any of a diol with two functions, a triol with three functions, or a polyol with four or more functions. From the viewpoints of ease of acquisition, versatility, and reactivity, a diol with two functions is preferred, and a polyether-type diol is even more preferred. Examples of the aforementioned polyether-type diols include polyethylene glycol, polypropylene glycol, and polybutanediol. The aforementioned polyester-type polyols are obtained by polycondensation reaction of a polyol component and a polyacid component. Examples of the aforementioned polyol component include: various alkyl diols (preferably alkyl diols with 2 to 10 carbon atoms), such as ethylene glycol, diethylene glycol, and butanediol; and various diols. Examples of the aforementioned polyacid component include components known as polyacid components of general polyesters. More specifically, examples of polyacid components include: aliphatic dicarboxylic acids with 4 to 20 carbon atoms, such as adipic acid and sebacic acid; aromatic dicarboxylic acids, such as terephthalic acid; aromatic polyacids, such as trimellitic acid; anhydrides of these dicarboxylic acids or polyacids; derivatives of these dicarboxylic acids or polyacids; dimer acids; and hydrogenated dimer acids. The aforementioned polycarbonate-type polyols are not particularly limited. Examples of such polycarbonate-type polyols include reactants of glycols and alkyl carbonates. Examples of the aforementioned polyisocyanate compounds (x2) include, for example, aliphatic polyisocyanates, alicyclic polyisocyanates, aromatic polyisocyanates, etc. As for the aforementioned compound (x3) containing (meth)acrylic groups, examples include (meth)acrylates containing hydroxyl groups, and examples include compounds that are the same as the hydroxyl-containing (meth)acrylates exemplified above as components of acrylic resin, which are also components of polymer (A). Among these, the aforementioned (meth)acrylates containing hydroxyl groups are preferably hydroxyalkyl (meth)acrylates. The weight-average molecular weight of the aforementioned urethane (meth)acrylate (X) is preferably from 1,000 to 100,000, more preferably from 3,000 to 80,000, and even more preferably from 5,000 to 65,000. If the aforementioned weight-average molecular weight is 1,000 or higher, the polymer of the urethane (meth)acrylate (X) and the polymerizable monomer (Z) described later imparts appropriate hardness to the buffer layer. The ratio of the content of urethane (meth)acrylate (X) in composition (VI) to the total content of components other than the solvent ([content of urethane (meth)acrylate (X) in composition (VI) (parts by mass)] / [total content of components other than the solvent in composition (VI) (parts by mass)] × 100) is preferably 10% to 70% by mass, more preferably 20% to 70% by mass, further preferably 25% to 60% by mass, and even more preferably 30% to 50% by mass. By using the aforementioned ratio within this range, the effectiveness of having a buffer layer in the first protective film forming sheet is enhanced without compromising other functions. [Other Ingredients] Composition (VI) may also contain urethane (meth)acrylate (X) and other ingredients that are not equivalent to urethane (meth)acrylate (X). Examples of the aforementioned other ingredients in composition (VI) include, for example, a thiol-containing compound (Y) and a polymerizable monomer (Z). The composition (VI) may contain only one or more of the aforementioned other components. In the case of two or more components, the combination and ratio of these other components may be arbitrarily selected. The composition (VI) may also contain only one of the thiol-containing compound (Y) and the polymerizable monomer (Z), but it is preferred that it contains both the thiol-containing compound (Y) and the polymerizable monomer (Z). [Compounds containing thiol groups (Y)] The aforementioned compounds containing thiol groups (Y) are not particularly limited as long as they have one or more thiol groups (-SH) in one molecule. Examples of compounds (Y) containing a thiol group include: nonylthiol, 1-dodecylthiol, 1,2-ethanedithiol, 1,3-propanedithiol, triazine thiol, triazine dithiol, triazine trithiol, 1,2,3-propanetrithiol, tetraethylene glycol-bis(3-mercaptopropionate), trimethylolpropane tri(3-mercaptopropionate), pentaerythritol tetra(3-mercaptopropionate), pentaerythritol tetramercaptoacetate, dipentaerythritol hexa(3-mercaptopropionate), tris[(3-mercaptopropoxy)-ethyl] isocyanurate, 1,4-bis(3-mercaptobutoxy)butane, pentaerythritol tetra(3-mercaptobutyrate), 1,3,5-tris(3-mercaptobutoxyethyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, etc. The thiol-containing compound (Y) is preferably a polyfunctional thiol-containing compound (a compound having two or more thiol groups in one molecule), and more preferably a tetrafunctional thiol-containing compound (a compound having four thiol groups in one molecule). The composition (VI) may contain only one type of thiol-containing compound (Y) or two or more types. In the case of two or more types, the combination and ratio of these thiol-containing compounds (Y) may be arbitrarily selected. The content of the mercaptan-containing compound (Y) in composition (VI) is preferably 1 to 4.9 parts by mass relative to the total content of urethane (meth)acrylate (X) and polymerizable monomer (Z) ([content of mercaptan-containing compound (Y) in composition (VI) (parts by mass)] / [total content of urethane (meth)acrylate (X) and polymerizable monomer (Z) in composition (VI) (parts by mass)] × 100). More preferably, it is 1.5 to 4.8 parts by mass. [Polymerizable Monomer (Z)] From the viewpoint of improving the film-forming properties of the buffer layer, composition (VI) preferably contains a polymerizable monomer (Z). The aforementioned polymerizable monomer (Z) is a polymerizable compound other than urethane (meth)acrylate (X), and is a compound that can be polymerized by irradiation with an energy beam. However, the polymerizable monomer (Z) does not contain a resin component. Here, "resin component" refers to an oligomer or polymer with a repeating structure, meaning a compound with a weight average molecular weight of 1000 or higher. The aforementioned polymerizable monomer (Z) is preferably a compound having one or more (meth)acrylic groups. Examples of such polymerizable monomers (Z) include: alkyl (meth)acrylates in which the alkyl group constituting the alkyl ester is a chain structure having 1 to 18 carbon atoms; (meth)acrylates having functional groups such as hydroxyl, amide, amino, or epoxy groups; (meth)acrylates having an alicyclic structure, such as cycloalkyl (meth)acrylates; (meth)acrylates having an aromatic structure; (meth)acrylates having a heterocyclic structure; and vinyl compounds other than these components. Among the aforementioned functionalized (meth)acrylates, those containing hydroxyl groups include, for example, compounds identical to those listed above as components of acrylic resins (A) constituting composition (III). Examples of (meth)acrylates with an alicyclic structure include: isobornyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclopentyl (meth)acrylate, dicyclopentenoxy (meth)acrylate, cyclohexyl (meth)acrylate, 1-adamantyl (meth)acrylate, 2-adamantyl (meth)acrylate, etc. Examples of (meth)acrylates with an aromatic structure include: phenylhydroxypropyl (meth)acrylate, benzyl (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, etc. Examples of (meth)acrylates with heterocyclic structures include tetrahydrofurfuryl (meth)acrylate and 2-morpholinoethyl (meth)acrylate. The composition (VI) may contain only one type of polymerizable monomer (Z) or two or more types. In the case of two or more types, the combination and ratio of these polymerizable monomers (Z) can be arbitrarily selected. In the composition (VI), the polymerizable monomer (Z) preferably contains at least a (meth)acrylate having an alicyclic structure, more preferably a (meth)acrylate having an alicyclic structure and a (meth)acrylate having a functional group, and even more preferably isobornyl (meth)acrylate and hydroxyalkyl (meth)acrylate. The ratio of the content of polymerizable monomer (Z) in composition (VI) to the total content of components other than the solvent ([content of polymerizable monomer (Z) in composition (VI) (parts by mass)] / [total content of components other than the solvent in composition (VI) (parts by mass)]×100) is preferably 20% to 80% by mass, more preferably 30% to 80% by mass, further preferably 40% to 75% by mass, and even more preferably 50% to 70% by mass. With the aforementioned content within this range, the mobility of the portion of the buffer layer having the structure formed by the polymerization of polymerizable monomer (Z) becomes higher, thus tending to make the buffer layer more flexible, thereby making it easier for the first protective film forming sheet to follow the bump formation surface of the semiconductor wafer. The ratio of the content of alicyclic (meth)acrylate in composition (VI) to the total content of polymerizable monomers (Z) ([content of alicyclic (meth)acrylate in composition (VI) (parts by mass)] / [total content of polymerizable monomers (Z) in composition (VI) (parts by mass)] × 100) is preferably 52% to 87% by mass, more preferably 55% to 85% by mass, and even more preferably 60% to 80% by mass. With the aforementioned content within this range, the first protective film forming sheet becomes easier to follow the bump formation surface of the semiconductor wafer. The mass ratio of [the content (parts by mass) of urethane (meth)acrylate (X) in composition (VI)] to [the content (parts by mass) of polymerizable monomer (Z) in composition (VI)] is preferably 20 / 80 to 60 / 40, more preferably 30 / 70 to 50 / 50, and even more preferably 35 / 65 to 45 / 55. With the aforementioned mass ratio within this range, the first protective film forming sheet becomes easier to follow the bump formation surface of the semiconductor wafer. The [photopolymerization initiator] composition (VI) preferably further includes a photopolymerization initiator. The composition (VI) containing the photopolymerization initiator is more easily cured by irradiation with an energy beam. Examples of photopolymerization initiators contained in composition (VI) include, for example: acetophenone, 2,2-diethoxybenzophenone, 4-methylbenzophenone, 2,4,6-trimethylbenzophenone, milchnerone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, benzoin dimethyl ketal, dibenzoin, diacetyl, 1-chloroanthraquinone, 2-chloroanthraquinone, 2-ethylanthraquinone, 2,2-dimethoxy-1,2-diphenylethane-1-one, 1 Low molecular weight polymerization initiators such as hydroxycyclohexylphenyl ketone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-1-propanone, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-1-butanone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, diethylthioxanone, isopropylthioxanone, and 2,4,6-trimethylbenzyldiphenylphosphine oxide; oligomerization polymerization initiators such as oligomeric {2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone}, etc. The composition (VI) may contain only one type of photopolymerization initiator or two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators can be arbitrarily selected. The content of the photopolymerization initiator in composition (VI) is preferably 0.05 to 15 parts by mass relative to the total content of urethane (meth)acrylate (X) and polymerizable monomer (Z) ([content of photopolymerization initiator in composition (VI) (parts by mass)] / [total content of urethane (meth)acrylate (X) and polymerizable monomer (Z) in composition (VI) (parts by mass)] × 100). More preferably, it is 0.1 to 10 parts by mass, and even more preferably, it is 0.3 to 5 parts by mass. [Other Additives] Composition (VI) may also contain other additives that are not equivalent to the components described so far, without impairing the effectiveness of the present invention. Examples of such other additives include: crosslinking agents, antioxidants, softeners (plasticizers), fillers, rust inhibitors, pigments, dyes, etc. When composition (VI) contains the aforementioned other additives, the content of the aforementioned other additives in composition (VI) is preferably 0.01 to 6 parts by mass relative to the total content of urethane (meth)acrylate (X) and polymerizable monomer (Z) ([content of other additives in composition (VI) (parts by mass)] / [total content of urethane (meth)acrylate (X) and polymerizable monomer (Z) in composition (VI) (parts by mass)] × 100). More preferably, it is 0.1 to 3 parts by mass. [Other Resin Components] In composition (VI), other resin components that are not equivalent to urethane (meth)acrylate (X) may also be included without impairing the effectiveness of the present invention. [Modified Example of Buffer Layer] Up to this point, a buffer layer formed using a buffer layer forming composition containing urethane (meth)acrylate (X) has been described. However, in this embodiment, the buffer layer may also be a layer formed using a buffer layer forming composition containing other resin components such as olefin resin instead of urethane (meth)acrylate (X). In terms of improving the objective effect of the present invention (high-speed adhesion of the first protective film forming sheet and the permeability of the first protective film forming film), as an example of a preferred buffer layer, the following buffer layer can be cited: it is obtained by using a buffer layer forming composition (composition (VI)) containing urethane (meth)acrylate (X), a mercaptan-containing compound (Y), a polymerizable monomer (Z), a photopolymerization initiator, and a crosslinking agent, and the total content of the aforementioned urethane (meth)acrylate (X), the aforementioned mercaptan-containing compound (Y), the aforementioned polymerizable monomer (Z), the aforementioned photopolymerization initiator, and the aforementioned crosslinking agent in the aforementioned buffer layer forming composition is 85% by mass or more, preferably 90% by mass or more, and more preferably 95% by mass or more. In light of the above, as an example of a better buffer layer, the following buffer layer can be cited: it is obtained using a buffer layer forming composition (composition (VI)) containing urethane (meth)acrylate (X), a thiol-containing compound (Y), a polymerizable monomer (Z), a photopolymerization initiator, and a crosslinking agent, wherein the aforementioned urethane (meth)acrylate (X) is a reactant formed from a terminal isocyanate urethane prepolymer as a reactant of a polyol compound (x1) and a polyisocyanate compound (x2), and a compound (x3) having a (meth)acrylic group, wherein the aforementioned thiol-containing compound... The compound (Y) is a multifunctional compound containing thiol groups, having two or more thiol groups in one molecule. The polymerizable monomer (Z) is a (meth)acrylate having an alicyclic structure or a (meth)acrylate having a functional group. The total content of the aforementioned urethane (meth)acrylate (X), the aforementioned thiol-containing compound (Y), the aforementioned polymerizable monomer (Z), the aforementioned photopolymerization initiator, and the aforementioned crosslinking agent in the aforementioned buffer layer forming composition is at least 85% by mass, preferably at least 90% by mass, and more preferably at least 95% by mass, relative to the total content of components other than the solvent. These buffer layers are preferably layers obtained by energy line hardening of the aforementioned buffer layer forming composition. The thickness of these buffer layers is preferably 10 to 70 times, more preferably 30 to 50 times, relative to the thickness of the intermediate release layer. [Manufacturing Method of Buffer Layer Forming Composition] Composition (VI) and other buffer layer forming compositions are obtained by blending the various components used to constitute the composition. Except for differences in the types of blended components, buffer layer forming compositions can be manufactured using the same method as the thermosetting first protective film forming composition described above. ◎First Substrate The aforementioned first substrate is in sheet or film form. Various resins can be cited as constituent materials of the aforementioned first substrate. Examples of such resins include: polyethylene such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), and high-density polyethylene (HDPE); polyolefins other than polyethylene such as polypropylene, polybutene, polybutadiene, polymethylpentene, and norbornene resins; ethylene-based copolymers (copolymers obtained using ethylene as a monomer) such as ethylene-vinyl acetate copolymers, ethylene-(meth)acrylate copolymers, and ethylene-(meth)acrylate copolymers; and vinyl chloride-based resins such as polyvinyl chloride and vinyl chloride copolymers. Resins (resins obtained using vinyl chloride as a monomer); polystyrene; polycyclic olefins; polyesters such as polyethylene terephthalate, polyethylene naphthalate, polyethylene terephthalate, polyethylene isophthalate, polyethylene 2,6-naphthalenedicarboxylate, and fully aromatic polyesters whose constituent units all have aromatic cyclic groups; copolymers of two or more of the aforementioned polyesters; poly(meth)acrylates; polyurethane; polyurethane acrylates; polyimide; polyamide; polycarbonate; fluoropolymers; polyacetals; modified polyphenylene ether; polyphenylene sulfide; polyurethane; polyetherketone, etc. Additionally, polymer alloys such as mixtures of the aforementioned polyesters and resins other than the aforementioned polyesters can also be cited as examples of the aforementioned resins. Preferably, in polymer alloys of the aforementioned polyesters and resins other than the aforementioned polyesters, the amount of the resins other than the polyesters is relatively small. In addition, examples of the aforementioned resins may include: cross-linked resins formed by cross-linking one or more of the resins described above; modified resins such as ionomers used in one or more of the resins described above. The resin constituting the first substrate may be only one type or two or more types. In the case of two or more types, the combination and ratio of these resins can be arbitrarily selected. The first substrate can be a single layer or multiple layers (two or more). In the case of multiple layers, these multiple layers can be the same or different from each other, and there are no particular restrictions on the combination of these multiple layers. The thickness of the first substrate is preferably from 5 μm to 1000 μm, more preferably from 10 μm to 500 μm, even more preferably from 15 μm to 300 μm, and particularly preferably from 20 μm to 150 μm. Here, "thickness of the first substrate" refers to the overall thickness of the first substrate, such as the thickness of a first substrate composed of multiple layers, which means the total thickness of all the layers constituting the first substrate. The first substrate is preferably a substrate with high thickness accuracy, that is, preferably a substrate in which thickness deviation is suppressed regardless of the location. Examples of materials that can be used to form such a first substrate with high thickness accuracy include: polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, ethylene-vinyl acetate copolymer, etc. In addition to the aforementioned main constituent materials such as resin, the first substrate may also contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers). The first substrate can be transparent or opaque, and can also be colored according to its purpose, and other layers can be deposited. In the case where the aforementioned first protective film is an energy line hardening film, the first substrate is preferably a substrate that allows energy lines to pass through. The first substrate can be manufactured using known methods. For example, the first substrate containing resin can be manufactured by molding a resin composition containing the aforementioned resin. ◎ An example of a first protective film forming sheet: As a preferred example of a first protective film forming sheet in this embodiment, the following first protective film forming sheet can be used to form a first protective film at least on a bumped surface of a semiconductor wafer; the aforementioned first protective film forming sheet is formed by sequentially stacking a first substrate, a buffer layer, an intermediate release layer, and a first protective film forming film in the thickness direction of these layers; the aforementioned intermediate release layer contains an ethylene-vinyl acetate copolymer, and the content of the aforementioned ethylene-vinyl acetate copolymer in the aforementioned intermediate release layer is 80% by mass or more relative to the total mass of the aforementioned intermediate release layer; the aforementioned first protective film forming film is a thermosetting first protective film forming film containing a polymer component (A), a thermosetting component (B), a curing accelerator (C), a filler material (D), and an additive (I), the aforementioned first protective film forming film... The total content of the aforementioned polymer component (A), the aforementioned thermosetting component (B), the aforementioned curing accelerator (C), the aforementioned filler material (D), and the aforementioned additive (I) in the protective film forming film is 85% by mass or more relative to the total mass of the first protective film forming film; the aforementioned buffer layer is a buffer layer obtained using a buffer layer forming composition containing urethane (meth)acrylate (X), a mercaptan-containing compound (Y), a polymerizable monomer (Z), a photopolymerization initiator, and a crosslinking agent, and the total content of the aforementioned urethane (meth)acrylate (X), the aforementioned mercaptan-containing compound (Y), the aforementioned polymerizable monomer (Z), the aforementioned photopolymerization initiator, and the aforementioned crosslinking agent in the buffer layer forming composition is 85% by mass or more relative to the total content of components other than the solvent. In this first protective film forming sheet, the thickness of the first protective film forming film is preferably 2 to 7 times the thickness of the intermediate release layer, and the thickness of the buffer layer is preferably 10 to 70 times the thickness of the intermediate release layer. As another example of a preferred first protective film forming sheet of this embodiment, the following first protective film forming sheet can be used to form a first protective film at least on a bumped surface of a semiconductor wafer; the aforementioned first protective film forming sheet is formed by sequentially stacking a first substrate, a buffer layer, an intermediate release layer, and a first protective film forming film in the thickness direction of these layers; the aforementioned intermediate release layer contains an ethylene-vinyl acetate copolymer, and the content of the aforementioned ethylene-vinyl acetate copolymer in the aforementioned intermediate release layer is 80% by mass or more relative to the total mass of the aforementioned intermediate release layer, and the amount of the constituent units derived from vinyl acetate in the aforementioned ethylene-vinyl acetate copolymer is... The proportion of the constituent units to the total amount is 16% to 40% by mass, and the weight average molecular weight of the aforementioned ethylene-vinyl acetate copolymer is 200,000 or less; the aforementioned first protective film forming film is a thermosetting first protective film forming film containing polymer component (A), thermosetting component (B), curing accelerator (C), filler material (D), and additive (I), wherein the aforementioned polymer component (A) is polyvinyl acetal, the aforementioned thermosetting component (B) is epoxy resin (B1) and thermosetting agent (B2), and the aforementioned additive (I) is one or more selected from the group consisting of rheology control agent, surfactant and silicone oil, and the aforementioned first protective film The total content of the aforementioned polymer component (A), the aforementioned thermosetting component (B), the aforementioned curing accelerator (C), the aforementioned filler material (D), and the aforementioned additive (I) in the film-forming membrane is 85% by mass or more relative to the total mass of the aforementioned first protective film-forming membrane; the aforementioned buffer layer is a buffer layer obtained using a buffer layer forming composition containing urethane (meth)acrylate (X), a thiol-containing compound (Y), a polymerizable monomer (Z), a photopolymerization initiator, and a crosslinking agent, and the aforementioned urethane (meth)acrylate (X) is a terminal isocyanate formed from the reactant of a polyol compound (x1) and a polyisocyanate compound (x2). The reactant is formed from an ester carbamate prepolymer and a compound (x3) having a (meth)acrylic group. The aforementioned thiol-containing compound (Y) is a multifunctional thiol-containing compound having two or more thiol groups per molecule. The aforementioned polymerizable monomer (Z) is a (meth)acrylate having an alicyclic structure and a (meth)acrylate having a functional group. The total content of the aforementioned carbamate (meth)acrylate (X), the aforementioned thiol-containing compound (Y), the aforementioned polymerizable monomer (Z), the aforementioned photopolymerization initiator, and the aforementioned crosslinking agent in the aforementioned buffer layer forming composition is at least 85% by mass relative to the total content of components other than the solvent. In this first protective film forming sheet, the thickness of the first protective film is preferably 2 to 7 times the thickness of the intermediate release layer, and the thickness of the buffer layer is preferably 10 to 70 times the thickness of the intermediate release layer. ◇ Manufacturing Method of the First Protective Film Forming Sheet The aforementioned first protective film forming sheet can be manufactured by sequentially laminating the above-mentioned layers in a corresponding positional relationship. The formation method of each layer is as described above. For example, the first protective film forming sheet can be manufactured by the method shown below. That is, a buffer layer forming composition (such as the aforementioned composition (VI)) is applied to one side of a first substrate, and dried as needed, thereby forming a buffer layer on the first substrate. If the buffer layer forming composition has energy line hardening properties, the applied buffer layer forming composition is then subjected to energy line hardening. This yields a first laminated sheet composed of a first substrate and a buffer layer. A release film can also be provided on the exposed surface of the buffer layer in the first laminated sheet (the side opposite to the first substrate side) as needed. In addition, an intermediate release layer forming composition (such as the aforementioned composition (VII)) is applied to the release film, and dried as needed, thereby forming an intermediate release layer on the release film. In this case, the intermediate release layer forming composition is preferably applied to the release treatment surface of the release film. Additionally, a first protective film forming composition (such as the aforementioned composition (III), composition (IV), or composition (V)) is applied to the release film and dried as needed, thereby forming a first protective film forming film on the release film. In this case, the first protective film forming composition is preferably applied to the release treatment surface of the release film. Then, the exposed surface of the buffer layer (the side opposite to the first substrate side) and the exposed surface of the intermediate release layer (the side opposite to the release film side) in the first laminated sheet are bonded together. In this way, a second laminated sheet is obtained, which is formed by sequentially laminating the first substrate, the buffer layer, the intermediate release layer, and the release film in the thickness direction of these layers. Next, in the second laminated sheet, the release film is removed, so that the exposed surface of the intermediate release layer (the side opposite to the buffer layer side) and the exposed surface of the first protective film forming film (the side opposite to the release film side) are bonded together. This yields a first protective film forming sheet formed by sequentially laminating the first substrate, buffer layer, intermediate release layer, first protective film forming film, and release film in the thickness direction of these layers. The release film disposed on the first protective film forming film in the first protective film forming sheet can be removed at any stage from the manufacture of the first protective film forming sheet until its use. A first protective film forming sheet having other layers besides the aforementioned layers can be manufactured in such a way that either or both of the aforementioned other layer forming step and lamination step are appropriately added in the aforementioned manufacturing method, with the lamination position of the aforementioned other layers being an appropriate position. ◇Method for Manufacturing a Semiconductor Device (Method for Using the First Protective Film Forming Sheet) As described above, using the first protective film forming sheet of this embodiment, the first protective film forming film is attached to the bump formation surface of a semiconductor wafer. Then, the first protective film forming film is hardened as needed, thereby manufacturing a semiconductor wafer having a semiconductor wafer and a first protective film disposed on the bump formation surface of the semiconductor wafer, resulting in a semiconductor wafer with a first protective film. At this time, the first protective film forming sheet of this embodiment can be attached to the bump formation surface of the semiconductor wafer at high speed. Furthermore, even during this high-speed attachment of the first protective film forming sheet, the top of the bump can protrude from the first protective film forming film, suppressing the residue of the first protective film forming film on the upper part of the bump. Then, the semiconductor wafer with the first protective film is diced, thereby manufacturing a semiconductor wafer having a semiconductor wafer and a first protective film disposed on the bump formation surface of the semiconductor wafer, resulting in a semiconductor wafer with a first protective film. At this time, the residue of the first protective film formed on the bumps of the semiconductor wafer with the first protective film is suppressed, and therefore the adhesion of the first protective film on the bumps of the obtained semiconductor wafer with the first protective film is also suppressed. Furthermore, the semiconductor wafer with the first protective film is flip-chip bonded to a substrate using the bumps therein, thereby enabling the manufacture of a semiconductor device. At this time, the adhesion of the first protective film on the bumps of the semiconductor wafer with the first protective film is suppressed, thus not hindering the electrical connection between the semiconductor wafer and the substrate. That is, the first protective film forming wafer of this embodiment is suitable for manufacturing a semiconductor device. Hereinafter, a method for manufacturing a semiconductor device using the aforementioned first protective film forming wafer will be described. A method for manufacturing a semiconductor device according to one embodiment of the present invention uses the first protective film forming sheet of one embodiment of the present invention described above. The manufacturing method includes: an attachment step, in which the first protective film forming sheet is attached to a bump-bumped surface (bump forming surface) of a semiconductor wafer, such that the top of the bump protrudes from the first protective film forming film, thereby setting the first protective film forming sheet on the semiconductor wafer; and a first protective film forming step, after the attachment step, removing layers other than the first protective film forming film from the first protective film forming film, and further, if the first protective film forming film is hardenable, hardening the first protective film forming film to form a first protective film. In the case of non-hardening, the first protective film formed after removing the layers other than the first protective film is regarded as the first protective film, thereby forming the first protective film on the bump-formed surface (bump-formed surface); the dicing step, after the first protective film formation step, dicing the semiconductor wafer to form a semiconductor wafer; the cutting step, after the first protective film formation step, cutting the first protective film; and the assembly step, flip-chip bonding the semiconductor wafer with the first protective film obtained after the dicing and cutting steps to a substrate with the top of the bumps, wherein the semiconductor wafer with the first protective film has the semiconductor wafer and the first protective film provided on the bump-formed surface of the semiconductor wafer, and the top of the bumps protrudes from the first protective film. In the manufacturing method of the semiconductor device of this embodiment, when the first protective film is hardened (in this specification, it is sometimes referred to as "manufacturing method (1)"), the manufacturing method includes: an attachment step, in which the first protective film forming sheet is attached to a bump-bumped surface (bump forming surface) of a semiconductor wafer, such that the top of the bump protrudes from the first protective film forming sheet, thereby setting the first protective film forming sheet on the semiconductor wafer; and a first protective film forming step, after the attachment step, in which layers other than the first protective film forming film are removed from the first protective film forming film, thereby forming the first protective film. A first protective film is formed by film curing, thereby forming the first protective film on the aforementioned bump-bumped surface (bump-forming surface); a dicing step, after the aforementioned first protective film formation step, dicing the aforementioned semiconductor wafer, thereby fabricating a semiconductor wafer; a cutting step, after the aforementioned first protective film formation step, cutting the aforementioned first protective film; and a mounting step, flip-chip bonding the semiconductor wafer with the first protective film obtained after the aforementioned dicing and cutting steps to a substrate with the top of the aforementioned bumps, wherein the aforementioned semiconductor wafer with the first protective film includes the aforementioned semiconductor wafer and the aforementioned first protective film disposed on the aforementioned bump-bumped surface of the aforementioned semiconductor wafer, and the top of the aforementioned bumps protrudes from the aforementioned first protective film. In the manufacturing method of the semiconductor device of this embodiment, when the first protective film is non-hardening (sometimes referred to as "manufacturing method (2)" in this specification), the manufacturing method includes: an attachment step, in which the first protective film forming sheet is attached to a bump-bumped surface (bump forming surface) of a semiconductor wafer, such that the top of the bump protrudes from the first protective film forming sheet, thereby setting the first protective film forming sheet on the semiconductor wafer; and a first protective film forming step, after the attachment step, removing the layer other than the first protective film forming sheet from the first protective film forming sheet, and further removing the layer other than the first protective film forming sheet. The first protective film formed after the layer is regarded as the first protective film, thereby forming the first protective film on the bump-formed surface (bump-formed surface); the dicing step, after the first protective film formation step, dicing the semiconductor wafer to form a semiconductor wafer; the cutting step, after the first protective film formation step, cutting the first protective film; and the assembly step, flip-chip bonding the semiconductor wafer with the first protective film obtained after the dicing and cutting steps to a substrate with the top of the bumps, wherein the semiconductor wafer with the first protective film has the semiconductor wafer and the first protective film provided on the bump-formed surface of the semiconductor wafer, and the top of the bumps protrudes from the first protective film. [Manufacturing Method (1)] Hereinafter, the aforementioned manufacturing method (1) will be described. Figures 3A to 3E are cross-sectional views illustrating an example of the manufacturing method (1) when using the first protective film forming sheet 1 shown in Figure 2. Furthermore, in the figures after Figure 3A, the same symbols as those shown in the previously described figures are used for the components, and detailed descriptions of these components are omitted. [Attachment Step] In the attachment step described in manufacturing method (1), as shown in Figures 3A to 3B, the first protective film forming film 14 of the first protective film forming sheet 1 is attached to the surface (bump forming surface) 9a of the semiconductor wafer 9 with bumps 91, so that the top 9101 of the bumps 91 protrudes from the first protective film forming film 14, thereby setting the first protective film forming sheet 1 on the semiconductor wafer 9. In the aforementioned attachment step, for example, firstly, as shown in FIG3A, the first protective film forming sheet 1 is arranged such that the first protective film forming film 14 therein faces the bump forming surface 9a of the semiconductor wafer 9. The height of the bump 91 is not particularly limited, but is preferably 120μm to 300μm, more preferably 150μm to 270μm, and even more preferably 180μm to 240μm. By having the height of the bump 91 above the aforementioned lower limit, the function of the bump 91 can be further improved. By having the height of the bump 91 below the aforementioned upper limit, the effectiveness of suppressing the residue of the first protective film 14 on the upper part 910 of the bump 91 becomes higher. In this specification, the term "bump height" refers to the height of the portion of the bump that is at the highest point from the bump forming surface. The width of the bump 91 is not particularly limited, but is preferably 170μm to 350μm, more preferably 200μm to 320μm, and even more preferably 230μm to 290μm. By having a width of the bump 91 that is above the aforementioned lower limit, the function of the bump 91 can be further improved. By having a width of the bump 91 that is below the aforementioned upper limit, the effectiveness of suppressing the residue of the first protective film 14 on the upper part 910 of the bump 91 becomes higher. In this specification, the term "bump width" refers to the maximum length of the line segment obtained by connecting two different points on the surface of the bump with a straight line when looking down at the bump from a direction perpendicular to the bump forming surface. The distance between adjacent bumps 91 is not particularly limited, but is preferably 250 μm to 800 μm, more preferably 300 μm to 600 μm, and even more preferably 350 μm to 500 μm. By setting the aforementioned distance above the lower limit, the function of the bumps 91 can be further improved. By setting the aforementioned distance below the upper limit, the effectiveness of suppressing the residue of the first protective film 14 on the upper part 910 of the bumps 91 becomes higher. In this specification, the term "distance between adjacent bumps" means the minimum distance between the surfaces of adjacent bumps. Subsequently, in the aforementioned attachment step, the first protective film forming film 14 is brought into contact with the bumps 91 on the semiconductor wafer 9, and the first protective film forming sheet 1 is pressed against the semiconductor wafer 9. This causes the first surface 14a of the first protective film forming film 14 to sequentially press against the surface 91a of the bumps 91 and the bump forming surface 9a of the semiconductor wafer 9. At this time, the first protective film forming film 14 is heated, thereby softening it and allowing it to expand between the bumps 91 in a manner that covers them, closely adhering to the bump forming surface 9a, and covering the surface 91a of the bumps 91, especially the surface 91a near the bump forming surface 9a, thereby embedding the base of the bumps 91. Through the above steps, as shown in FIG3B, the first protective film forming film 14 of the first protective film forming sheet 1 is attached to the bump forming surface 9a of the semiconductor wafer 9. As described above, as a method for pressing (in other words, attaching) the first protective film forming sheet 1 onto the semiconductor wafer 9, known methods for attaching various sheets to an object can be applied, such as using a roller laminator. The heating temperature of the first protective film forming sheet 1 (first protective film forming film 14) when pressed (attached) to the semiconductor wafer 9 is only required to be a temperature at which the curing of the thermosetting first protective film forming film 14 is not completely stopped or excessively carried out, for example, it can be 80°C to 100°C. However, in order to further improve the effectiveness of suppressing the residue of the first protective film forming film 14 on the upper part 910 of the bump 91, the aforementioned heating temperature is more preferably 85°C to 95°C. The pressure applied when the first protective film forming sheet 1 (first protective film forming film 14) is pressed (attached) to the semiconductor wafer 9 is not particularly limited, and may be, for example, 0.1 MPa to 1.5 MPa. However, in order to improve the effectiveness of suppressing the residue of the first protective film forming film 14 on the upper part 910 of the bump 91, the aforementioned pressure is preferably 0.3 MPa to 1 MPa. The speed at which the first protective film forming sheet 1 (first protective film forming film 14) is attached to the semiconductor wafer 9 (attachment speed) can be, for example, 3 mm / s or more, preferably 4 mm / s or more. That is, in the aforementioned attachment step, it is preferable to attach the first protective film forming film 14 to the bump forming surface 9a of the semiconductor wafer 9 at an attachment speed of 4 mm / s or more. By attaching the first protective film forming film 14 at a high speed of 4 mm / s or more, the aforementioned effect of suppressing the residue of the first protective film forming film 14 on the upper part 910 of the bump 91 is more significantly manifested. On the other hand, by attaching at a speed of 20 mm / s or less, the aforementioned effect of suppressing the residue of the first protective film forming film 14 on the upper part 910 of the bump 91 is more stably manifested. As described above, when the first protective film forming sheet 1 is pressed (attached) to the semiconductor wafer 9, the first protective film forming film 14 and the intermediate release layer 13 in the first protective film forming sheet 1 are subjected to pressure from the bump 91 by the pressing through the buffer layer 12. Initially, the first surface 14a of the first protective film forming film 14 and the first surface 13a of the intermediate release layer 13 become concave. Then, in this state, the first protective film forming film 14, subjected to pressure from the bump 91, cracks occur. Finally, during the stage where the first surface 14a of the first protective film forming film 14 is pressed onto the bump forming surface 9a of the semiconductor wafer 9, the upper portion 910 of the bump 91, including the top tip 9101, protrudes through the first protective film forming film 14. Furthermore, in this final stage, the upper portion 910 of the bump 91 usually does not penetrate the intermediate release layer 13. This is because the intermediate release layer 13 contains EVA. As shown in Figure 3B, at the end of the aforementioned bonding step, the first protective film 14 is completely or almost completely absent on the upper part 910 of the bump 91, including the top 9101. The presence of the first protective film 14 on the upper part 910 of the bump 91 is suppressed. Furthermore, in this specification, the phrase "almost no first protective film 14 remains on the upper part of the bump" means, unless otherwise specified, that a slight amount of the first protective film 14 remains on the upper part of the bump. However, the amount of the first protective film 14 remaining is such that it does not impede the electrical connection between the semiconductor wafer and the substrate when the bumped semiconductor wafer is flip-chip bonded to the substrate. After the attachment step described in manufacturing method (1), the inner surface 9b of the semiconductor wafer 9, which is opposite to the bump forming surface 9a, is ground as needed, and a second protective film forming sheet (illustration omitted) is attached to the inner surface 9b. [First Protective Film Formation Step] Following the attachment step described in manufacturing method (1), in the aforementioned first protective film formation step, firstly, as shown in FIG3C, layers other than the first protective film forming film 14 in the first protective film forming sheet 1 are removed from the first protective film forming film 14. In this specification, this step in the first protective film formation step is sometimes referred to as the "removal step". More specifically, the removed layers are the first substrate 11, the buffer layer 12, and the intermediate release layer 13. Thereby, a semiconductor wafer 914 having a first protective film forming film is obtained, which is composed of a semiconductor wafer 9 and a first protective film forming film 14 disposed on the bump forming surface 9a of the semiconductor wafer 9. Layers other than the first protective film forming film 14 can be removed from the first protective film forming film 14 using known methods. In the first protective film forming step described in manufacturing method (1), then, as shown in FIG3D, the first protective film forming film 14 is further hardened to form the first protective film 14', thereby forming the first protective film 14' on the bump forming surface 9a. In this specification, this step in the first protective film forming step is sometimes referred to as the "hardening step". Thereby, a semiconductor wafer 914' having the first protective film is obtained, which is composed of a semiconductor wafer 9 and the first protective film 14' disposed on the bump forming surface 9a of the semiconductor wafer 9. The first protective film forming film 14 is hardenable. In this step (the aforementioned hardening step), when the first protective film forming film 14 is thermosetting, the first protective film forming film 14 is hardened by heating. When the first protective film forming film 14 is energy line hardening, the first protective film forming film 14 is hardened by irradiating an energy line. The heating conditions and the energy line irradiation conditions at this time are as described above. [Segmentation Step, Cutting Step] After the first protective film formation step described in manufacturing method (1), the semiconductor wafer 9 is segmented in the aforementioned segmentation step to fabricate a semiconductor wafer 90, and the first protective film 14' is cut in the aforementioned cutting step. Here, the cut first protective film 14' is relabeled as 140'. By performing the aforementioned segmentation and cutting steps, as shown in FIG3E, a semiconductor wafer 9140' with a first protective film is obtained, which includes a semiconductor wafer 90 and a cut first protective film (sometimes simply referred to as "first protective film" in this specification) 140' provided on the bump formation surface (bumped surface) 90a of the semiconductor wafer 90. The aforementioned segmentation and cutting steps can be performed using known methods. The order in which the aforementioned dicing and cutting steps are performed is not particularly limited, but it is preferable to perform the dicing and cutting steps simultaneously, or in the order of the dicing and cutting steps. When the dicing and cutting steps are performed sequentially, for example, the dicing step can be performed by a known cutting method, and then the cutting step can be performed immediately and consecutively. Cutting can be performed by setting a cutting disc (not shown) on the inner surface (or the ground inner surface) 9b of the semiconductor wafer 9. In the aforementioned cutting step, the first protective film 14' is cut along the predetermined dicing portion or the diced portion of the semiconductor wafer 9 (in other words, the outer periphery of the semiconductor wafer 90). In the semiconductor wafer 9140' with the first protective film, the top tip 9101 of the bump 91 protrudes from the first protective film 140', and the first protective film is completely or almost not attached to the upper part 910 of the bump 91 including the top tip 9101, thus suppressing the attachment of the first protective film to the upper part 910 of the bump 91. Furthermore, in this specification, the phrase "almost not attached to the upper part of the bump" means, unless otherwise specified, that the first protective film is slightly attached to the upper part of the bump, but the amount of the first protective film attached is the amount to which the semiconductor wafer with the bump is flip-chip bonded to the substrate without hindering the electrical connection between the semiconductor wafer and the substrate. [Assembly Step] In the assembly step described earlier in manufacturing method (1), a semiconductor wafer 9140' with a first protective film, whose top tip 9101 of the bump 91 obtained after the aforementioned dividing and cutting steps protrudes from the first protective film 140', is flip-chip connected to a substrate (illustration omitted) by the top tip 9101 of the bump 91. At this time, the semiconductor wafer 9140' with the first protective film is connected to the circuit forming surface of the substrate. The upper part 910 of the bump 91 in the semiconductor wafer 9140' with the first protective film is suppressed due to the adhesion of the first protective film 140', so in this step, the electrical connection between the semiconductor wafer 90 and the substrate is high. When using the aforementioned second protective film forming wafer, the semiconductor wafer 9140' with the first protective film is picked up from the dicing sliver (not shown) in the second protective film forming wafer before flip-chip bonding. The semiconductor wafer 9140' with the first protective film can be picked up using known methods. When using the second protective film forming wafer, the semiconductor wafer 90 in the semiconductor wafer 9140' with the first protective film has a cut second protective film (not shown) on its inner surface 90b. When the second protective film forming film in the second protective film forming sheet is curable, the second protective film forming film is cured at an appropriate time point according to its type, thereby becoming the second protective film. Furthermore, the second protective film is cut at an appropriate time point according to its type. The second protective film can be hardened using the same method as the first protective film 14. It can be hardened simultaneously with the first protective film 14, or it can be hardened separately from the first protective film 14. The second protective film can be cut using the same method as the first protective film. There is no particular limitation on the order in which the aforementioned dicing step and the cutting of the second protective film are performed; preferably, the dicing step and the cutting of the second protective film are performed simultaneously, or the cutting of the second protective film is performed after the dicing step. When the dicing step and the cutting of the second protective film are performed sequentially, for example, the dicing step is performed using a known cutting method, and then the cutting of the second protective film is performed immediately and continuously. The second protective film is cut along the predetermined dicing portion of the semiconductor wafer 9 or through the dicing portion (in other words, the outer periphery of the semiconductor wafer 90). The following describes how a semiconductor package is fabricated using the circuit board 90 already assembled with a semiconductor chip obtained in this way, according to a known method. By using the semiconductor package, a target semiconductor device can be manufactured (illustrations omitted). [Manufacturing Method (2)] Next, the aforementioned manufacturing method (2) will be explained. Figures 4A to 4D are cross-sectional views illustrating an example of the manufacturing method (2) when using the first protective film forming sheet 1 shown in Figure 2. In the attachment step described earlier in manufacturing method (2), as shown in Figures 4A and 4B, the first protective film forming film 14 of the first protective film forming sheet 1 is attached to the surface (bump forming surface) 9a of the semiconductor wafer 9 with bumps 91, such that the top tip 9101 of the bumps 91 protrudes from the first protective film forming film 14, thereby setting the first protective film forming sheet 1 on the semiconductor wafer 9. The attachment step in manufacturing method (2) is the same as the attachment step described earlier in manufacturing method (1), except that the first protective film forming film 14 in the protective film forming sheet 1 is non-curable instead of curable, and can be performed in the same manner as the attachment step described earlier in manufacturing method (1). Therefore, further detailed description of the attachment step in manufacturing method (2) is omitted. In manufacturing method (2), even if the first protective film forming film 14 is attached to the bump forming surface 9a of the semiconductor wafer 9 at high speed, as shown in FIG4B, at the end of the aforementioned attachment step, the first protective film forming film 14 is completely or almost completely absent above the top 910 of the bump 91 including the head top 9101, and the residue of the first protective film forming film 14 is suppressed at the top 910 of the bump 91. After the attachment step described in manufacturing method (2), the inner surface 9b of the semiconductor wafer 9, which is opposite to the bump forming surface 9a, is ground as needed, and a second protective film forming sheet (illustration omitted) is attached to the inner surface 9b. [First Protective Film Forming Step] After the attachment step described in manufacturing method (2), in the aforementioned first protective film forming step, the layer other than the first protective film forming film 14 in the first protective film forming sheet 1 is removed from the first protective film forming film 14. In this specification, similar to the case of manufacturing method (1), this step in the first protective film forming step is sometimes referred to as the "removal step". This step (the aforementioned removal step) is the same as the aforementioned removal step in manufacturing method (1) except that the first protective film forming film 14 in the protective film forming sheet 1 is non-curable instead of curable, and can be performed in the same manner as the removal step in manufacturing method (1). Therefore, further detailed description of the removal step in manufacturing method (2) is omitted. In the first protective film formation step described earlier in manufacturing method (2), the non-cured first protective film formation film 14 after the layers other than the first protective film formation film 14 have been removed is regarded as the first protective film. Thus, as shown in FIG4C, the first protective film 14' is formed on the bump formation surface 9a. The non-cured first protective film formation film 14 also functions as a protective film in this state. Therefore, in this embodiment, the non-cured first protective film formation film 14 is regarded as the first protective film 14' after the intermediate release layer 13 has been removed during use. Thus, similar to the situation after the curing step described earlier in manufacturing method (1), a semiconductor wafer 914' with the first protective film is obtained. Even in manufacturing method (2), in the semiconductor wafer 9140' with the first protective film, the top tip 9101 of the bump 91 protrudes from the first protective film 140', and the first protective film is completely or almost not attached to the upper part 910 of the bump 91 including the top tip 9101, and the attachment of the first protective film to the upper part 910 of the bump 91 is suppressed. [Segmentation Step, Cutting Step] After the first protective film formation step described in manufacturing method (2), the semiconductor wafer 9 is segmented in the aforementioned segmentation step to fabricate a semiconductor wafer 90, and the first protective film 14' is cut in the aforementioned cutting step. By performing the aforementioned segmentation and cutting steps, as shown in FIG4D, a semiconductor wafer 9140' with the first protective film is obtained. The slitting and cutting steps of manufacturing method (2) are the same as those of manufacturing method (1) except that the first protective film 14' is not a hardened form of the first protective film forming film 14. They can be performed in the same manner as those of manufacturing method (1). Therefore, further detailed descriptions of the slitting and cutting steps of manufacturing method (2) are omitted. [Assembly Step] In the assembly step described prior to manufacturing method (2), a semiconductor wafer 9140' with a first protective film, whose top tip 9101 of the bump 91 obtained after the aforementioned dividing and cutting steps protrudes from the first protective film 140', is flip-chip connected to a substrate (illustration omitted) by the top tip 9101 of the bump 91. At this time, the semiconductor wafer 9140' with the first protective film is connected to the circuit forming surface of the substrate. Since the adhesion of the first protective film 140' is suppressed at the top 910 of the bump 91 in the semiconductor wafer 9140' with the first protective film, the electrical connection between the semiconductor wafer 90 and the substrate is high in this step. The assembly steps of manufacturing method (2) are the same as those of manufacturing method (1) except that the first protective film 140' is not a hardened form of the first protective film forming film 14. Therefore, further detailed descriptions of the assembly steps of manufacturing method (2) are omitted. In manufacturing method (2), a semiconductor package is subsequently fabricated using a circuit board on which the semiconductor wafer 90 is already mounted, in the same manner as in manufacturing method (1). By using the semiconductor package, the target semiconductor device can be manufactured (illustration omitted). In either of the manufacturing methods (1) and (2), the case of using the first protective film forming sheet 1 shown in FIG2 has been described here. However, when using the first protective film forming sheet of other embodiments, the first protective film forming sheet also performs the same function as when using the first protective film forming sheet 1. [Modification of the Semiconductor Device Manufacturing Method (Method for Using a First Protective Film Forming Wafer)] In the semiconductor device manufacturing method of this embodiment, a semiconductor wafer with trenches formed on its bump forming surface can be used as the semiconductor wafer. These trenches serve as the dividing points of the semiconductor wafer when it is diced and monolithically assembled into a semiconductor chip. By using this type of semiconductor wafer, a semiconductor chip can be manufactured that has a first protective film not only on its bump forming surface but also on its side surfaces. Here, "side surface" refers to the outer periphery of the semiconductor chip continuous with the bump forming surface; a semiconductor chip with a rectangular planar shape has four side surfaces. Furthermore, the first protective film is provided on the bump forming surface and the four side surfaces of the rectangular semiconductor chip. Regardless of the planar shape of the semiconductor chip, a semiconductor chip whose side surfaces are also protected can obtain a higher level of protection provided by the first protective film. As a method for manufacturing a semiconductor device in this embodiment, for example, the following method can be used: A first protective film forming sheet according to one embodiment of the present invention is used, and the manufacturing method includes: an attachment step, wherein a semiconductor wafer having grooves forming the dividing portions of the semiconductor wafer on a bumped surface (bump forming surface) is used as a semiconductor wafer system, and the first protective film forming sheet is attached to the bumped surface (bump forming surface) of the semiconductor wafer. The first protective film is formed by: (1) making the top of the aforementioned bump protrude from the aforementioned first protective film forming film, and filling the aforementioned first protective film forming film in the aforementioned groove, thereby setting the aforementioned first protective film forming sheet on the aforementioned semiconductor wafer; (2) the first protective film forming step, after the aforementioned attachment step, removing the layer of the aforementioned first protective film forming sheet other than the aforementioned first protective film forming film from the aforementioned first protective film forming film, and then, if the aforementioned first protective film forming film is hardenable, hardening the aforementioned first protective film forming film to form the first protective film. In the case of non-hardening, the first protective film formed after removing the layers other than the first protective film is regarded as the first protective film, thereby forming the first protective film on the bump-bearing surface (bump-forming surface); in the dicing step, after the first protective film formation step, the side (inner surface) of the semiconductor wafer opposite to the bump-bearing surface (bump-forming surface) is ground until the ground surface reaches the trench filled with the first protective film (so that the trench appears on the opposite side), and the semiconductor wafer is diced. This fabrication process involves forming a semiconductor wafer group by filling the aforementioned first protective film into the aforementioned trench; a cutting step, after the aforementioned dicing step, cutting the aforementioned first protective film; and a mounting step, flip-chip bonding the semiconductor wafer with the first protective film obtained after the aforementioned dicing and cutting steps to a substrate using the top of the aforementioned bumps. The aforementioned semiconductor wafer with the first protective film includes the aforementioned semiconductor wafer and the aforementioned first protective film disposed on the aforementioned semiconductor wafer's surface and side surfaces with the aforementioned bumps, and the top of the aforementioned bumps protrudes from the aforementioned first protective film. In a variation of the semiconductor device manufacturing method of this embodiment, the manufacturing method when the first protective film forming film is hardened (sometimes referred to as "manufacturing method (3)" in this specification) includes: an attachment step, wherein a semiconductor wafer having a bumped surface (bump forming surface) used as a semiconductor wafer system and having trenches forming the dividing portions of the aforementioned semiconductor wafer is attached to the aforementioned bumped surface (bump forming surface) of the aforementioned semiconductor wafer, such that the top of the bump protrudes from the aforementioned first protective film forming film, and the aforementioned first protective film forming film is filled into the aforementioned trenches, thereby setting the aforementioned first protective film forming film on the aforementioned semiconductor wafer; and a first protective film forming step, wherein after the aforementioned attachment step, the layer other than the aforementioned first protective film forming film in the aforementioned first protective film forming film is removed from the aforementioned first protective film forming film, and then the aforementioned first protective film forming film is hardened to form the first protective film. The first protective film is formed on the bump-bearing surface (bump forming surface). A dicing step, after the first protective film formation step, involves grinding the inner surface of the semiconductor wafer opposite to the bump-bearing surface (bump forming surface) until the grinding surface reaches the trench filled with the first protective film (causing the trench to appear on the opposite surface), thereby dicing the semiconductor wafer to create a semiconductor wafer assembly formed by the first protective film filling the trench. A cutting step, after the dicing step, involves cutting the first protective film. A packaging step, after the dicing and cutting steps, involves flip-chip bonding the semiconductor wafer with the first protective film obtained with the bumps to a substrate. The semiconductor wafer with the first protective film includes the semiconductor wafer, the bump-bearing surface and the first protective film disposed in the semiconductor wafer, and the bumps protrude from the first protective film. In a variation of the semiconductor device manufacturing method of this embodiment, the manufacturing method when the first protective film forming film is non-hardening (sometimes referred to as "manufacturing method (4)" in this specification) includes: an attachment step, using a semiconductor wafer with bumps (bump forming surface) on which trenches are formed to form the dividing portions of the aforementioned semiconductor wafer as the semiconductor wafer, attaching the aforementioned first protective film forming film from the first protective film forming sheet to the aforementioned bump-faced surface (bump forming surface) of the aforementioned semiconductor wafer, such that the top of the bumps protrudes from the aforementioned first protective film forming film, and filling the aforementioned first protective film forming film in the aforementioned trenches, thereby setting the aforementioned first protective film forming sheet on the aforementioned semiconductor wafer; a first protective film forming step, after the aforementioned attachment step, removing the layers other than the aforementioned first protective film forming film from the aforementioned first protective film forming film, and forming the aforementioned first protective film after removing the layers other than the aforementioned first protective film forming film. The first protective film is formed on the bump-bearing surface (bump forming surface). In the dicing step, after the first protective film formation step, the inner surface of the semiconductor wafer opposite to the bump-bearing surface (bump forming surface) is ground until the ground surface reaches the trench filled with the first protective film (causing the trench to appear on the opposite surface), thereby dicing the semiconductor wafer to create a semiconductor wafer assembly formed by the first protective film filling the trench. In the cutting step, after the dicing step, the first protective film is cut. In the assembly step, the semiconductor wafer with the first protective film obtained after the dicing and cutting steps is flip-chip bonded to a substrate using the top of the bumps. The semiconductor wafer with the first protective film includes the semiconductor wafer, the bump-bearing surface and the first protective film disposed in the semiconductor wafer, and the top of the bumps protrudes from the first protective film. In the aforementioned modifications (manufacturing methods (3) and (4)), the aforementioned attachment step is used as a bump forming surface in a semiconductor wafer system to form the aforementioned trenches in a semiconductor wafer system. Except in this respect, it can be performed in the same manner as the aforementioned attachment step in the aforementioned manufacturing methods (manufacturing methods (1) and (2)) using semiconductor wafers without trenches. The aforementioned first protective film forming step in the aforementioned modifications (manufacturing methods (3) and (4)) can be performed in the same manner as the aforementioned first protective film forming step in the aforementioned manufacturing methods (manufacturing methods (1) and (2)) using semiconductor wafers without trenches. Regarding the aforementioned dicing steps in the modified examples (manufacturing methods (3) and (4)), the method for dicing the semiconductor wafer is limited to the specific method of grinding the inner surface of the semiconductor wafer. Otherwise, it can be performed in the same manner as the dicing steps in the aforementioned manufacturing methods (manufacturing methods (1) and (2)) using semiconductor wafers without trenches. The aforementioned cutting step in the modified examples (manufacturing methods (3) and (4)) can be performed, for example, by attaching a dicing sheet to the inner surface of the entire semiconductor wafer opposite to the surface with bumps (bump forming surface), and then cutting the first protective film filled in the aforementioned trenches near the center along the side surface of the semiconductor wafer in the width direction of the aforementioned trenches. In this way, the first protective film is cut between the side surfaces of adjacent semiconductor wafers, thereby obtaining a semiconductor wafer in which the first protective film is provided on these side surfaces. The cutting of the first protective film can be performed using known methods. The aforementioned mounting steps in the modified examples (manufacturing methods (3) and (4)) can be performed in the same manner as the aforementioned mounting steps in the manufacturing methods (manufacturing methods (1) and (2)) using semiconductor wafers without trenches. [Example] The present invention will now be described in more detail with reference to specific embodiments. However, the present invention is not limited to the embodiments shown below. [Raw Materials for Manufacturing the First Protective Film Forming Composition] The following shows the raw materials used to manufacture the first protective film forming composition. [Polymer Component (A)] (A)-1: Polyvinyl butyral ("S-LEC BL-10" manufactured by Sekisui Chemicals Co., Ltd., with a weight average molecular weight of 25,000 and a glass transition temperature of 59°C) having the constituent units represented by the following formulas (i)-1, (i)-2 and (i)-3. [Chemistry 2] (where l) 1 is approximately 28 m 1 represents 1 to 3, n 1 is an integer between 68 and 74. [Epoxy Resin (B1)] (B1)-1: Liquid modified bisphenol A type epoxy resin (DIC's "Epiclon EXA-4850-150", molecular weight 900, epoxy equivalent 450 g / eq) (B1)-2: Dicyclopentadiene type epoxy resin (DIC's "Epiclon HP-7200HH", epoxy equivalent 254 g / eq to 264 g / eq) [Thermosetting Agent (B2)] (B2)-1: o-Cresol type phenolic varnish resin (DIC's "Phenolite KA-1160") [Curing Accelerator (C)] (C)-1: 2-Phenyl-4,5-dihydroxymethylimidazol (Shikoku Chemical Industry Co., Ltd.'s "Curezol 2PHZ-PW") [Filler (D)] (D)-1: Epoxy-modified spherical silica (Admanano YA050C-MKK manufactured by Admatechs, average particle size 50nm) [Additive (I)] (I)-1: Surfactant (acrylic polymer, BYK-361N manufactured by BYK) (I)-2: Silicone oil (arane-modified silicone oil, XF42-334 manufactured by Momentive Performance Materials Japan) [Example 1] [Manufacturing of a sheet for forming a first protective film] [Manufacturing of a composition for forming a thermosetting first protective film] Polymer component (A)-1 (100 parts by mass), epoxy resin (B1)-1 (290 parts by mass), epoxy resin (B1)-2 (220 parts by mass), (B2)-1 (160 parts by mass), curing accelerator (C)-1 (2 parts by mass), filler material (D)-1 (200 parts by mass), additive (I)-1 (25 parts by mass), and additive (I)-2 (3 parts by mass) were dissolved or dispersed in methyl ethyl ketone and stirred at 23°C to obtain a composition (III) with a total concentration of 45% by mass for forming a thermosetting first protective film, excluding the solvent. Furthermore, the amounts of components other than the solvent shown here are all amounts of the target substance excluding the solvent. [Manufacturing of the first protective film] A release film ("SP-PET381031", manufactured by Lintec Corporation, with a thickness of 38 μm) that has undergone a silicone treatment on one side using polyethylene terephthalate as a film, is coated with the aforementioned composition (III) and heated and dried at 120°C for 2 minutes to form a first protective film with a thickness of 45 μm. [Preparation of the composition for forming the buffer layer] The following components were prepared: monofunctional amino carbamate acrylate (40 parts by mass), isobornyl acrylate (45 parts by mass), 2-hydroxypropyl acrylate (15 parts by mass), pentaerythritol tetra(3-mercaptobutyrate) (Karenz MT (registered trademark) PE1 manufactured by Showa Denko Co., Ltd., a secondary 4-functional compound containing thiol groups, with a solid content concentration of 100% by mass) (3.5 parts by mass), a crosslinking agent (1.8 parts by mass), and a photopolymerization initiator (2-hydroxy-2-methyl-1-phenyl-propane-1-one, Darocure (registered trademark) 1173 manufactured by BASF Co., Ltd., with a solid content concentration of 100% by mass) (1.0 parts by mass), to prepare composition (VI). [Formation of the Buffer Layer] Using a PET film (COSMOSHINE (registered trademark) A4300 manufactured by Toyobo Co., Ltd., with a thickness of 75 μm) as the first substrate, the aforementioned composition (VI) was applied to one side of the first substrate to form a coating film. Ultraviolet light was irradiated onto the exposed side of the coating film (opposite to the PET film side) to form a semi-cured portion of the coating film. At this time, a conveyor belt type ultraviolet irradiation device (ECS-401GGX manufactured by EYE GRAPHICS Co., Ltd.) was used as the ultraviolet irradiation device, and a high-pressure mercury lamp (H04-L41 manufactured by EYE GRAPHICS Co., Ltd.) was used as the ultraviolet source, with an illuminance of 120 mW / cm². 2 Light intensity 200mJ / cm 2 The material was irradiated with ultraviolet light at a wavelength of 365 nm under specific conditions. These irradiation conditions were specified using an ultraviolet cumulative irradiance meter ("UVPF-A1" manufactured by EYE GRAPHICS). Subsequently, a laminate was formed by attaching the exposed surface of the aforementioned semi-cured material to the release treatment surface of the aforementioned release film ("SP-PET381031" manufactured by Lintec, 38 μm thick). Ultraviolet light was then irradiated onto this laminate from the outside of the release film side to completely cure the semi-cured material, thereby forming a buffer layer with a thickness of 400 μm. At this time, the same ultraviolet irradiation device and ultraviolet source as described above were used, with an irradiance of 330 mW / cm². 2 Light intensity 1200mJ / cm 2 The substrate is irradiated with ultraviolet light at a wavelength of 365 nm under the conditions described above. These irradiation conditions are specified using the same ultraviolet cumulative irradiance meter as described above. Through the above steps, a laminate (equivalent to the aforementioned first laminate) is obtained by sequentially depositing the first substrate, the buffer layer, and the release film in the thickness direction of these layers. [Preparation of the composition for forming the intermediate release layer] At room temperature, ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 55000, VA content 20% by mass) is dissolved in toluene to prepare a toluene solution with a solid content concentration of 12% by mass, and this solution is designated as composition (VII). [Formation of intermediate release layer] The above-obtained composition (VII) was applied to the release treatment surface of the aforementioned release film ("SP-PET381031" manufactured by Lintec Corporation, with a thickness of 38 μm), and heated and dried at 100°C for 2 minutes to form an intermediate release layer with a thickness of 10 μm. [Manufacturing of the First Protective Film Forming Sheet] In the laminated sheet (first laminated sheet) with a buffer layer obtained above, the release film is removed, and the exposed surface of the intermediate release layer obtained above is bonded to the exposed surface of the buffer layer generated therefrom, thereby obtaining a laminated sheet (equivalent to the aforementioned second laminated sheet) with an intermediate release layer further laminated thereon. Subsequently, the release film is removed from the bonded intermediate release layer (in the second laminated sheet), and the exposed surface of the first protective film forming film obtained above is bonded to the exposed surface of the intermediate release layer generated therefrom. Through the above steps, a first protective film forming sheet is obtained, which is composed of a first substrate (thickness 75 μm), a buffer layer (thickness 400 μm), an intermediate release layer (thickness 10 μm), and a first protective film forming film (thickness 45 μm) sequentially laminated in the thickness direction of these layers. [Evaluation of the First Protective Film Forming Sheet] [Evaluation of the High-Speed ​​Adhesion of the First Protective Film Forming Sheet] The exposed surface of the first protective film forming film (the side opposite to the intermediate release layer side) of the first protective film forming sheet obtained above was pressed onto the bump forming surface of an 8-inch diameter semiconductor wafer with bumps, thereby attaching the first protective film forming sheet to the bump forming surface of the semiconductor wafer. At this time, a semiconductor wafer with a bump height of 210 μm, a bump width of 250 μm, and a bump spacing of 400 μm was used. In addition, the attachment of the first protective film forming sheet was performed using an attachment apparatus (roller laminator, Lintec Corporation "RAD-3510 F / 12"), under the conditions of a table temperature of 90°C, an attachment pressure of 0.5 MPa, and a roller attachment height of -400 μm, while heating the first protective film forming sheet. Furthermore, this type of application is performed multiple times by varying the application speed. Next, using a digital microscope, the semiconductor wafer to which the first protective film is attached is observed through the first protective film forming sheet. At this time, within the semiconductor wafer, one central portion (6mm × 6mm) and four equally spaced portions (each 6mm × 6mm) near the outer periphery are selected. The orientation connecting the two portions near the outer periphery and the central portion is aligned with the attachment direction of the first protective film forming sheet, and these five portions are observed. Furthermore, each of these five portions contains eight bumps; that is, the periphery of a total of 40 bumps in the semiconductor wafer is observed. Furthermore, when any of these five locations has connected air bubbles between adjacent bumps (in other words, gaps between the semiconductor wafer and the first protective film forming sheet), it is determined that the first protective film forming film in the first protective film forming sheet is not properly attached to the bump forming surface of the semiconductor wafer, and the attachment speed of the first protective film forming sheet when it can be properly attached is confirmed. Based on this attachment speed, the high-speed attachment performance of the first protective film forming sheet is evaluated according to the following criteria. The results are shown in Table 1. [Evaluation Criteria] A: Can be properly attached at an attachment speed of 5 mm / s, exhibiting high-speed attachment performance. B: Can be properly attached at an attachment speed of 3 mm / s, but cannot be properly attached at an attachment speed of 5 mm / s, lacking high-speed attachment performance. C: Cannot be properly attached at an attachment speed of 3 mm / s, lacking attachment suitability. [Evaluation of the penetration of the bumps in the first protective film formation (confirmation of the thickness of the first protective film attachment on the upper part of the bumps)] Using the same method as described in the "Evaluation of the high-speed adhesion of the first protective film forming sheet", the first protective film forming sheet was attached to the bump forming surface of the semiconductor wafer. The attachment speed was specifically 5 mm / s. Then, using a grinding machine (Disco's "DFG8760"), the inner surface of the semiconductor wafer was ground to a thickness of 250 μm. Next, using a multi-wafer mounter (Lintec's "RAD-2700 F / 12"), the first substrate, buffer layer, and intermediate release layer were removed from the first protective film forming film, exposing the first protective film forming film. The first protective film forming film was then heated at 130°C for 4 hours to form the first protective film. Next, a dicing disc (Adwill D-686H dicing tape manufactured by Lintec Corporation) is attached to the inner surface (grinding surface) of the semiconductor wafer. Using a blade dicer (DFD6362 manufactured by Disco Corporation) and a dicing blade (ZH05-SD2000-N1-90CC manufactured by Disco Corporation), the blade rotation speed is set to 30,000 rpm and the blade feed speed is set to 30 mm / s. The semiconductor wafer is then divided into semiconductor wafers with a size of 6 mm × 6 mm, and the first protective film is cut into the same size. Through the above steps, a group of semiconductor wafers with the first protective film is obtained. This group of semiconductor wafers with the first protective film is composed of a plurality of semiconductor wafers with the first protective film, each having a semiconductor wafer and a first protective film disposed on the bump forming surface of the semiconductor wafer, arranged and held on the dicing disc. In the semiconductor wafer group with the first protective film obtained above, one part in the central part and four parts in the part near the outer periphery are selected at equal intervals. However, at this time, the direction connecting the two parts near the outer periphery and the one part in the central part is aligned with the attachment direction of the first protective film forming sheet. One of each of these five parts is taken out, for a total of five semiconductor wafers with the first protective film. Subsequently, using a scanning electron microscope (SEM, Keyence VE-9700), the surfaces of the bumps on these semiconductor wafers with the first protective film were observed at a 60° angle relative to the bump formation surface of the semiconductor wafer with the first protective film to confirm whether the first protective film was attached to the top of the bumps. Furthermore, each of these five semiconductor wafers with the first protective film contained eight bumps, meaning a total of 40 bumps were observed. The reason for observing the surfaces of the bumps on the semiconductor wafers with the first protective film at the aforementioned 60° angle is that the first protective film remaining on the top of the bumps is most easily identifiable this way. Subsequently, each of the five semiconductor wafers with the first protective film was sealed with epoxy resin, and the sealant was polished using a grinding wheel until a cross-section of the central portion of the bump was visible. The aforementioned cross-section was observed using a field emission scanning electron microscope (FE-SEM, Hitachi High Technologies S-4700), and the thickness of the first protective film deposit on the upper part of the bump was measured. The maximum value was taken as the thickness of the deposit. The amount (thickness) of the first protective film deposit on the upper part of the bump reflects the amount of residue remaining in the first protective film formation on the upper part of the bump, and therefore becomes an indicator for evaluating the continuity of the bump forming the first protective film. The results are shown in Table 1. [Manufacturing and Evaluation of the First Protective Film Forming Sheet] [Example 2] In manufacturing the composition for forming the intermediate release layer (composition (VII)), ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 65,000, VA content 28% by mass) was used instead of ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 55,000, VA content 20% by mass). Except in this respect, the first protective film forming sheet was manufactured using the same method as in Example 1, and the evaluation was performed. The results are shown in Table 1. [Example 3] In manufacturing the composition for forming the intermediate release layer (composition (VII)), ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 150,000, VA content 32% by mass) was used instead of ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 55,000, VA content 20% by mass). Except in this respect, a first protective film forming sheet was manufactured using the same method as in Example 1, and the results were evaluated. The results are shown in Table 1. [Manufacturing of the first protective film forming sheet] [Comparative Example 1] [Manufacturing of adhesive composition] Using an acrylic copolymer synthesized from 2-ethylhexyl acrylate (80 parts by mass) and 2-hydroxyethyl acrylate (20 parts by mass), 2-methacrylate isoethyl ester ("Karenz MOI (registered trademark)" manufactured by Showa Denko Co., Ltd.) was added to the acrylic copolymer in such a manner that the addition rate of the hydroxyl groups (100 equivalents) derived from the constituent units of 2-hydroxyethyl acrylate in the aforementioned acrylic copolymer was 80 equivalents, thereby obtaining an acrylic polymer (weight average molecular weight 800,000). In addition to the acrylic polymer (100 parts by weight), 3 parts by weight of 1-hydroxycyclohexylphenyl ketone (photopolymerization initiator, "Irgacure 184" manufactured by BASF) and 1.1 parts by weight of trimethylolpropane addition toluene diisocyanate (crosslinking agent, "Coronate L" manufactured by Tosoh Corporation) were added. A liquid was prepared using methyl ethyl ketone, and the liquid was stirred for 30 minutes to prepare a solution of adhesive composition with a solid content concentration of 20% by weight. Using the aforementioned release film ("SP-PET381031" manufactured by Lintec Corporation, with a thickness of 38 μm), the adhesive composition obtained above was applied to the aforementioned release treatment surface of the aforementioned release film, and then heated and dried at 100°C for 2 minutes to form an adhesive layer with a thickness of 10 μm. The first protective film forming sheet is manufactured by replacing the aforementioned intermediate release layer with the adhesive layer obtained above, except in this respect, using the same method as in Example 1. [Evaluation of the first protective film forming sheet] The first protective film forming sheet obtained above was evaluated using the same method as in Example 1. The results are shown in Table 1. [Table 1] As can be clearly seen from the above results, in Examples 1 to 3, the first protective film forming sheet can be normally attached to the bump forming surface of the semiconductor wafer at an attachment speed of 5 mm / s using the first protective film forming film, and the first protective film forming sheet has high-speed attachment capability. Furthermore, even with such high-speed attachment, the thickness of the first protective film adhering to the upper part of the bump is less than 0.4 μm (0.1 μm to 0.4 μm), which can suppress the adhesion of the first protective film to the upper part of the bump. That is, in Examples 1 to 3, even when the first protective film forming sheet is attached to the bump forming surface of the semiconductor wafer at high speed, the top of the bump can protrude from the protective film forming film, thereby suppressing the residue of the first protective film forming film on the upper part of the bump. Thus, in Examples 1 to 3, both the high-speed attachment capability of the first protective film forming sheet and the penetration capability of the bump of the first protective film forming film are high. The first protective film forming sheet of Examples 1 to 3 includes an intermediate release layer containing an ethylene-vinyl acetate copolymer. Based on the results of Examples 1 to 3, it can be confirmed that as the VA content of the ethylene-vinyl acetate copolymer decreases, and as the weight average molecular weight of the ethylene-vinyl acetate copolymer decreases, the permeability of the bumps in the first protective film forming film increases. In contrast, in Comparative Example 1, the first protective film forming sheet could be normally attached to the bump formation surface of the semiconductor wafer at an attachment speed of 3 mm / s using the first protective film forming film, but it could not be attached normally at an attachment speed of 5 mm / s, indicating that the first protective film forming sheet lacked high-speed attachment capability. Furthermore, when attached at an attachment speed of 5 mm / s, the thickness of the first protective film adhering to the upper part of the bump was 1.3 μm, which could not suppress the adhesion of the first protective film to the upper part of the bump. That is, in Comparative Example 1, when the first protective film forming sheet was attached to the bump formation surface of the semiconductor wafer at an attachment speed of 5 mm / s, it was impossible to prevent the first protective film forming film from remaining on the upper part of the bump. Thus, in Comparative Example 1, the first protective film forming sheet lacked high-speed attachment capability, and the bump penetration of the first protective film forming film was also low. The first protective film forming sheet in Comparative Example 1 has an adhesive layer containing an acrylic polymer, but lacks an intermediate release layer containing an ethylene-vinyl acetate copolymer. [Industrial Applicability] The present invention can be used to manufacture a semiconductor wafer or the like used in a flip-chip interconnect method, which has bumps and a protective film on the bump forming surface. 1: First protective film forming sheet; 9: Semiconductor wafer; 9a: Bump forming surface of semiconductor wafer (the bumped surface of semiconductor wafer); 9b: Inner surface of semiconductor wafer; 11: First substrate; 11a: One side of first substrate; 12: Buffer layer; 12a: One side of buffer layer; 13: Intermediate release layer; 13a: First side of intermediate release layer; 14: First protective film forming film; 14a: First side of first protective film forming film; 14': First protective film; 15: Release film; 82: Previous protective film forming film; 90: Semiconductor wafer; 90a: Bump forming surface of semiconductor wafer (the bumped surface of semiconductor wafer); 90b: Inner surface of semiconductor wafer; 91: Bump; 91a: Surface of bump; 140': First protective film after cutting; 910: Upper part of bump; 914: Semiconductor wafer with first protective film forming film; 914': Semiconductor wafer with first protective film; 9101: Top of bump; 9140': Semiconductor wafer with first protective film. [Fig. 1] is a cross-sectional view schematically showing an example of a state where a protective film remains on the upper part of a bump. [Fig. 2] is a cross-sectional view schematically showing an example of a first protective film forming sheet according to one embodiment of the present invention. [Fig. 3A] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device using the first protective film forming sheet shown in Fig. 2. [Fig. 3B] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device using the first protective film forming sheet shown in Fig. 2. [Fig. 3C] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device using the first protective film forming sheet shown in Fig. 2. [Fig. 3D] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device using the first protective film forming sheet shown in Fig. 2. [Fig. 3E] is a cross-sectional view schematically illustrating an example of a method for manufacturing a semiconductor device using the first protective film forming sheet shown in Fig. 2. [Figure 4A] is a cross-sectional view illustrating, in a schematic manner, another example of a method for manufacturing a semiconductor device using the first protective film forming wafer shown in Figure 2. [Figure 4B] is a cross-sectional view illustrating, in a schematic manner, another example of a method for manufacturing a semiconductor device using the first protective film forming wafer shown in Figure 2. [Figure 4C] is a cross-sectional view illustrating, in a schematic manner, another example of a method for manufacturing a semiconductor device using the first protective film forming wafer shown in Figure 2. [Figure 4D] is a cross-sectional view illustrating, in a schematic manner, another example of a method for manufacturing a semiconductor device using the first protective film forming wafer shown in Figure 2. 1: Sheet for forming the first protective film 11: First substrate 11a: One side of the first substrate 12: Buffer layer 12a: One side of the buffer layer 13: Intermediate peel layer 13a: First surface of the intermediate peeling layer 14: First protective film formation 14a: The first protective film forms the first surface of the film. 15: Peel-off membrane

Claims

1. A first protective film forming sheet for forming a first protective film on at least one bumped surface of a semiconductor wafer; the first protective film forming sheet is formed by sequentially depositing a first substrate, a buffer layer, an intermediate release layer, and a first protective film forming film in the thickness direction of these layers; the intermediate release layer contains an ethylene-vinyl acetate copolymer.

2. The first protective film forming sheet as described in claim 1, wherein in the aforementioned ethylene-vinyl acetate copolymer, the amount of the constituent units derived from vinyl acetate is in the proportion of 16% to 40% by mass relative to the total amount of the constituent units.

3. The first protective film forming sheet as described in claim 1 or 2, wherein the weight average molecular weight of the aforementioned ethylene-vinyl acetate copolymer is 200,000 or less.

4. A method for manufacturing a semiconductor device, using a first protective film forming wafer as described in any one of claims 1 to 3; the aforementioned manufacturing method includes: In the attachment step, the first protective film forming sheet is attached to the bumped surface of the semiconductor wafer, such that the top of the bump protrudes from the first protective film forming sheet, thereby setting the first protective film forming sheet on the semiconductor wafer; In the first protective film forming step, after the attachment step, the layers other than the first protective film forming film in the first protective film forming sheet are removed from the first protective film forming film. Then, if the first protective film forming film is hardenable, it is hardened to form the first protective film; if the first protective film forming film is not hardenable, the first protective film forming film after the removal of the layers other than the first protective film forming film is regarded as the first protective film, thereby forming the first protective film on the bumped surface; In the dicing step, after the first protective film forming step, the semiconductor wafer is diced to fabricate a semiconductor wafer; The cutting step involves cutting the first protective film after the first protective film formation step; and the assembly step involves flip-chip bonding the semiconductor wafer with the first protective film obtained after the slitting and cutting steps to a substrate with the top of the bumps. The semiconductor wafer with the first protective film includes the semiconductor wafer and the first protective film disposed on the bumped surface of the semiconductor wafer, and the top of the bumps protrudes from the first protective film.

5. The method for manufacturing a semiconductor device as described in claim 4, wherein in the aforementioned attachment step, the aforementioned first protective film is attached to the aforementioned surface with bumps on the aforementioned semiconductor wafer at an attachment speed of 4 mm / s or more.

6. The use of a sheet for forming a first protective film on at least one bumped surface of a semiconductor wafer; the sheet is formed by sequentially depositing a first substrate, a buffer layer, an intermediate release layer, and a first protective film forming film in the thickness direction of these layers; the intermediate release layer contains an ethylene-vinyl acetate copolymer.

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