Pressure-sensitive adhesive tape for processing semiconductor

Abstract

In this invention, an adhesive tape for semiconductor processing is provided, which has a substrate and an adhesive layer with energy line hardening properties disposed on one side of the substrate, and the following test is used to determine the properties of the adhesive layer for L... *a *b * Color difference ΔE in the colorimetric system *ab is 2.0 or less. Experiment: The following steps (1) to (5) are performed in sequence. (1) The adhesive layer of the above-mentioned semiconductor processing adhesive tape is attached to the copper foil to form a laminate. (2) The above-mentioned laminate is stored for 6 days in an environment with a temperature of 25℃±5℃, a humidity of 40%RH or higher and 60%RH or lower, and an energy line is blocked. (3) The above-mentioned semiconductor processing adhesive tape of the above-mentioned laminate is irradiated with an energy line to harden the adhesive layer. (4) The above-mentioned semiconductor processing adhesive tape is peeled off from the above-mentioned laminate. (5) The adhesive surface of the copper foil before the above-mentioned semiconductor processing adhesive tape is attached and the adhesive surface of the copper foil after the above-mentioned semiconductor processing adhesive tape is peeled off are determined at L. *a *b * Color difference ΔE in the colorimetric system *ab.

Description

Adhesive tape for semiconductor processing This invention relates to an adhesive tape for semiconductor processing. In the semiconductor manufacturing process, adhesive tapes for semiconductor processing, such as dicing tapes or back-grinding tapes, are used to fix or protect parts. For adhesive tapes used in semiconductor processing, it is required that they can fix parts with sufficient adhesive force during processing steps, and that the parts can be easily peeled off without damage after processing steps. As an adhesive tape for semiconductor processing, energy-line hardening adhesive tapes are being actively developed (e.g., Patent Documents 1-3). Energy-line hardening adhesive tapes reduce adhesion by hardening the adhesive layer through energy line irradiation, thus combining the strong adhesion before energy line irradiation with the ease of peeling after energy line irradiation. [Prior Art Documents] [Patent Documents] [Patent Document 1] International Publication No. 2015 / 133420 [Patent Document 2] Japanese Patent Application Publication No. 2005-23188 [Patent Document 3] Japanese Patent Application Publication No. 2014-154796 [The problem the invention aims to solve] Because the adhesive tape used in semiconductor processing is bonded to the substrate during the processing steps, the adhesive tape and the substrate are in contact for an extended period. Therefore, sometimes components contained in the adhesive tape may transfer to the surface of the substrate, causing contamination. If the surface of the substrate is contaminated, the following problems arise: in subsequent steps of semiconductor manufacturing, such as wiring and sealing processes, it can become a factor leading to poor adhesion or delamination, thereby reducing the performance or reliability of the semiconductor. This invention was made in view of the above-mentioned facts, and its main objective is to provide a low-pollution adhesive tape for semiconductor processing. [Technical Means for Solving the Problem] The inventors of this invention conducted intensive research to solve the aforementioned problems, resulting in the following insights. Contamination of the adherend caused by the adhesive tape used in semiconductor processing is a change in the surface state of the adherend. The inventors of this invention have repeatedly and intensively researched methods for evaluating the surface state of the adherend, focusing on the color of the adherend surface. Furthermore, in semiconductors, with miniaturization and high-speed operation, copper wiring is widely used; therefore, copper foil is considered as the adherend. Moreover, it was discovered that the color difference ΔE between the adhered surfaces of the copper foil before and after adhesion using the semiconductor processing adhesive tape is significant. ＊ ab This allows for the assessment of changes in the surface condition of the copper foil, which serves as the adherend, and thus the aforementioned color difference ΔE. ＊ ab Suitable for evaluating contamination of adhered bodies caused by adhesive tapes used in semiconductor processing. The present invention is based on this insight. One embodiment of the present invention provides an adhesive tape for semiconductor processing, which has a substrate and an adhesive layer with energy line hardening properties disposed on one side of the substrate, and the following test is performed to determine its performance in L... ＊ a ＊ b ＊ Color difference ΔE in a colorimetric system ＊ ab Below 2.0. Test: The following steps (1) to (5) are performed in sequence. (1) The adhesive layer of the above-mentioned semiconductor processing adhesive tape is attached to a copper foil to form a laminate. (2) The above-mentioned laminate is stored for 6 days in an environment with a temperature of 25℃±5℃, a humidity of 40%RH or higher and 60%RH or lower, and an energy line is blocked. (3) The above-mentioned semiconductor processing adhesive tape of the above-mentioned laminate is irradiated with an energy line to harden the adhesive layer. (4) The above-mentioned semiconductor processing adhesive tape is peeled off from the above-mentioned laminate. (5) The adhesive surface of the copper foil before the above-mentioned semiconductor processing adhesive tape is attached and the adhesive surface of the copper foil after the above-mentioned semiconductor processing adhesive tape is peeled off are determined at L. ＊ a ＊ b ＊ Color difference ΔE in a colorimetric system ＊ ab [Effects of the Invention] The adhesive tape for semiconductor processing in this invention has the effect of suppressing contamination of the adhered body. Embodiments of the present invention will be described below with reference to the accompanying drawings. However, the present invention can be implemented in many different ways and is not limited to the description of the embodiments illustrated below. Furthermore, the drawings may represent the width, thickness, shape, etc., of various parts in a patterned manner relative to the actual form for the purpose of clarity, but these are merely examples and do not limit the interpretation of the present invention. Also, in this specification and the drawings, elements that are the same as those described in previous drawings are sometimes labeled with the same symbols, and detailed descriptions are appropriately omitted. In this specification, when describing the arrangement of other components on a component, the abbreviation "on top of" or "below top of" includes, unless otherwise specified, the cases where other components are arranged directly above or below a component in connection with that component, and the cases where other components are arranged above or below a component, intervening in another component. Similarly, in this specification, when describing the arrangement of other components on the surface of a component, the abbreviation "on surface of" includes, unless otherwise specified, the cases where other components are arranged directly above or below a component in connection with that component, and the cases where other components are arranged above or below a component, intervening in another component. The following describes the adhesive tape for semiconductor processing according to the present invention. The semiconductor processing adhesive tape of the present invention has a substrate and an energy line hardening adhesive layer disposed on one side of the substrate, and the following test is used to determine the L... ＊ a ＊ b ＊ Color difference ΔE in a colorimetric system ＊ ab Below 2.0. Test: The following steps (1) to (5) are performed in sequence. (1) The adhesive layer of the above-mentioned semiconductor processing adhesive tape is attached to a copper foil to form a laminate. (2) The above-mentioned laminate is stored for 6 days in an environment with a temperature of 25℃±5℃, a humidity of 40%RH or higher and 60%RH or lower, and an energy line is blocked. (3) The above-mentioned semiconductor processing adhesive tape of the above-mentioned laminate is irradiated with an energy line to harden the adhesive layer. (4) The above-mentioned semiconductor processing adhesive tape is peeled off from the above-mentioned laminate. (5) The adhesive surface of the copper foil before the above-mentioned semiconductor processing adhesive tape is attached and the adhesive surface of the copper foil after the above-mentioned semiconductor processing adhesive tape is peeled off are determined at L. ＊ a ＊ b ＊ Color difference ΔE in a colorimetric system ＊ ab . Figure 1 is a schematic cross-sectional view illustrating the semiconductor processing adhesive tape of the present invention. The semiconductor processing adhesive tape 10 in Figure 1 has a substrate 1 and an energy line hardening adhesive layer 2 disposed on one side of the substrate 1. In the semiconductor processing adhesive tape 10, the color difference ΔE obtained by the above-described experiment... ＊ ab Below the predetermined value. In this invention, the color difference ΔE between the adhered surface of the copper foil before bonding with the semiconductor processing adhesive tape and the adhered surface of the copper foil after peeling off the semiconductor processing adhesive tape, as determined by the above-mentioned experiment, is used to measure the color difference ΔE between the adhered surface of the copper foil before bonding with the semiconductor processing adhesive tape and the adhered surface of the copper foil after peeling off the semiconductor processing adhesive tape. ＊ ab Below a predetermined value. This indicates minimal change in the surface condition of the copper foil's adhered surface before and after the adhesive tape for semiconductor processing is applied. Here, three factors can be cited as examples of factors that cause changes in the surface condition of copper foil. The first is the residue of paste produced when the adhesive tape used for semiconductor processing is peeled off. The second is the transfer of components, especially low-molecular-weight components, from the adhesive tape to the surface of the copper foil. The third is the reaction of components in the adhesive tape with copper. It is believed that when the surface condition of the copper foil changes due to the factors described above, it manifests as color difference. Therefore, in this invention, it can be said that the color difference ΔE mentioned above is used to achieve this. ＊ ab Below a predetermined value, the transfer of components contained in the semiconductor processing adhesive tape to the surface of the adherend can be suppressed. Furthermore, the reaction between components in the semiconductor processing adhesive tape and copper can be suppressed. Therefore, contamination of the adherend can be suppressed. Moreover, the residue of paste on the adherend during the peeling of the semiconductor processing adhesive tape can also be suppressed. Thus, the performance and reliability of the semiconductor can be improved. Furthermore, for example, Patent Document 1 discloses that the contamination of the adherend caused by organic matter contained in the semiconductor processing adhesive tape is assessed by measuring the water contact angle on the surface of the silicon wafer after the semiconductor processing adhesive tape has been peeled off. However, as mentioned above, the factors that cause changes in the surface state of the adherend are not solely due to the transfer of organic matter contained in the semiconductor processing adhesive tape to the surface of the adherend. In contrast, as mentioned above, it is believed that even when the surface condition of the copper foil changes due to any of the aforementioned factors, color difference will still occur. Therefore, in this invention, by employing the aforementioned color difference ΔE... ＊ ab It can accurately assess the surface condition of the adherend, and thus appropriately assess the contamination of the adherend caused by the adhesive tape used in semiconductor processing. The following describes the various components of the adhesive tape for semiconductor processing according to the present invention. 1. Characteristics of the Adhesive Tape for Semiconductor Processing: In the adhesive tape for semiconductor processing of the present invention, the following test was conducted to determine the characteristics of the tape in L... ＊ a ＊ b ＊ Color difference ΔE in a colorimetric system ＊ ab Ideally, the color difference should be below 2.0; preferably below 1.8; and even better, below 1.5. The color difference ΔE mentioned above... ＊ ab The better option is smaller, but there is no specific lower limit. Experiment: The following steps (1) to (5) are performed sequentially. (1) The adhesive layer of the above-mentioned semiconductor processing adhesive tape is attached to a copper foil to form a laminate. (2) The above-mentioned laminate is stored for 6 days in an environment with a temperature of 25℃±5℃, a humidity of 40%RH or higher and 60%RH or lower, and an energy line is blocked. (3) The above-mentioned semiconductor processing adhesive tape of the above-mentioned laminate is irradiated with an energy line to harden the adhesive layer. (4) The above-mentioned semiconductor processing adhesive tape is peeled off from the above-mentioned laminate. (5) The adhesive surface of the copper foil before the above-mentioned semiconductor processing adhesive tape is attached and the adhesive surface of the copper foil after the above-mentioned semiconductor processing adhesive tape is peeled off are determined at L. ＊ a ＊ b ＊ Color difference ΔE in a colorimetric system ＊ ab . In step (1) above, firstly, the semiconductor processing adhesive tape is cut into pieces with a width of 40 mm or more and a length of 100 mm or more. Also, as the copper foil, a 35 μm thick rolled copper foil "RCF-T5B" manufactured by Fukuda Metal Foil Powder Industry Co., Ltd. is used. Next, the glossy surface of the rolled copper foil is wiped with isopropyl alcohol (IPA) to allow it to dry thoroughly. Then, the adhesive layer of the semiconductor processing adhesive tape is bonded to the glossy surface of the rolled copper foil. At this time, under an environment with a temperature of 25℃±5℃, humidity of 40%RH or higher and 60%RH or lower, and with the energy line blocked, a 2 kg roller is moved back and forth twice to bond the adhesive layer of the semiconductor processing adhesive tape to the glossy surface of the rolled copper foil. Furthermore, if the semiconductor processing adhesive tape has a release liner, the release liner is peeled off to expose the adhesive layer. Furthermore, as mentioned above, in the semiconductor manufacturing process, the semiconductor processing adhesive tape is in contact with the substrate for a long time. Therefore, in step (1) above, the storage conditions are set to standard temperature and humidity, and the storage time is set to be relatively long. In step (2) above, the blocked energy line is an energy line that can harden the adhesive layer of the energy line hardening property, and is appropriately selected according to the type of adhesive layer. The energy line will be described below. In step (3) above, the irradiation energy line is an energy line that can harden the adhesive layer with energy line hardening properties, and is appropriately selected according to the type of adhesive layer. Furthermore, the irradiation conditions of the energy line (e.g., wavelength, cumulative light intensity, etc.) only need to be conditions that can harden the adhesive layer with energy line hardening properties, and are appropriately selected according to the composition, thickness, etc. of the adhesive layer. As a specific example of irradiation conditions for an energy line, an irradiation cumulative light intensity of 200 mJ / cm² can be cited. 2 The above conditions include ultraviolet light with wavelengths below 400 nm, especially ultraviolet light with a wavelength of 365 nm. In step (4) above, when peeling off the adhesive tape for semiconductor processing from the self-assembled body, it is preferred to set the peeling speed to about 100 mm / min or more and about 1000 mm / min or less. In step (5) above, L ＊ a ＊ b ＊ The colorimetric system is a system defined by the International Commission on Illumination (CIE) in 1976 and is also specified in JIS Z8781-4. Color difference ΔE ＊ ab It is obtained by the following formula: ΔE ＊ ab ={(ΔL) ＊ ) 2 +(Δa) ＊ ) 2 +(Δb) ＊ ) 2} 1 / 2 (In the above formula, ΔL) ＊ The brightness L of the copper foil to be bonded before bonding with adhesive tape in semiconductor processing ＊ Brightness L of the adhered surface of the copper foil after being peeled off from the adhesive tape used in semiconductor processing ＊ The difference. Also, Δa ＊ The color a of the copper foil to be bonded before bonding with adhesive tape in semiconductor processing. ＊ The color a of the adhered surface of the copper foil after it has been peeled off from the adhesive tape used in semiconductor processing. ＊ The difference. Also, Δb ＊ The color b of the copper foil to be bonded before bonding with adhesive tape in semiconductor processing ＊ Color b of the adhered surface of the copper foil after being peeled off from the adhesive tape used in semiconductor processing ＊ difference) Brightness L of the copper foil's adhered surface before and after the adhesive tape is removed during semiconductor processing. ＊ chromaticity a ＊ b ＊ The measurement can be performed using a spectrophotometer according to JIS Z8722. The measurement conditions are set as D65 light source, 10° field of view, and reflectance measurement. As a spectrophotometer, for example, the "Spectrophotometer SE6000" manufactured by Nippon Denshoku Kogyo Co., Ltd., which is capable of reflectance measurement, can be used. Furthermore, in step (5) above, the brightness L of the adhered surface of the copper foil after the semiconductor processing adhesive tape is applied is measured. ＊ chromaticity a ＊ b ＊ At that time, the semiconductor processing adhesive tape is peeled off from the self-lamination body, and the measurement is performed directly. On the other hand, the brightness L of the adhered surface of the copper foil before the semiconductor processing adhesive tape is applied is measured. ＊ chromaticity a ＊ b ＊ At that time, the adhered surface of the copper foil was wiped with isopropanol and allowed to dry completely before the measurement was performed. Furthermore, the adhesion of the energy line hardening adhesive layer is reduced by hardening it using energy line irradiation. Also, in step (1) above, the adhesive layer of the semiconductor processing adhesive tape is bonded not to the rough surface of the rolled copper foil, but to the glossy surface of the rolled copper foil. Therefore, the semiconductor processing adhesive tape can be easily peeled off from the laminate. Therefore, it is considered that there is almost no deformation of the copper foil due to the peeling of the semiconductor processing adhesive tape. Therefore, it is considered that the above-mentioned color difference ΔE ＊ ab The changes in the surface state of the copper foil caused by the adhesive tape used in semiconductor processing are obtained, rather than those caused by the deformation of the copper foil. Furthermore, when there are concerns about the deformation of the copper foil caused by the peeling of the adhesive tape used in semiconductor processing, the copper foil can be fixed to a rigid substrate such as a SUS (Steel Use Stainless) plate or glass plate before use. As a way to control the aforementioned color difference ΔE ＊ ab Methods such as adjusting the composition of the substrate, adjusting the substrate formation method, adjusting the composition of the adhesive layer, adjusting the degree of crosslinking of the adhesive, and configuring a primer layer between the substrate and the adhesive layer are examples of such methods. As a method for adjusting the composition of the substrate, examples include adjusting the content and molecular weight of additives. For instance, by reducing the content of additives, the transfer of components contained in the substrate to the surface of the adherend via the adhesive layer can be suppressed, thereby reducing the aforementioned color difference ΔE. ＊ ab Furthermore, for example, by increasing the molecular weight of the additive, the transfer of components contained in the substrate to the surface of the adherend via the adhesive layer can be inhibited, thereby reducing the aforementioned color difference ΔE. ＊ ab Specifically, by using polymer-type additives, the transfer of components contained in the substrate to the surface of the adherend via the adhesive layer can be inhibited. One method for adjusting the formation of the substrate is, for example, to ensure that the resin composition is fully melted during the melting and molding process. By ensuring that the resin composition is fully melted, the dispersibility of the additives contained in the resin composition is improved, thus ensuring that the additives are stably present in the substrate. This suppresses the transfer of components contained in the substrate to the surface of the adherend via the adhesive layer, thereby reducing the aforementioned color difference ΔE. ＊ ab . Methods for adjusting the composition of the adhesive layer include, for example, adjusting the molecular weight of the adhesive agent or additive, adjusting the glass transition temperature of the adhesive agent or additive, adjusting the compatibility of the adhesive agent and additive, adding a crosslinking agent, and adjusting the type or quantity of functional groups of the adhesive agent or energy line hardening compound. For example, in methods of adjusting the molecular weight of the adhesive, by increasing the molecular weight of the adhesive, the transfer of components contained in the adhesive layer to the surface of the adhered object can be suppressed. As a result, the aforementioned color difference ΔE can be reduced. ＊ ab Furthermore, for example, in methods of adjusting the molecular weight of additives, by increasing the molecular weight of the additives, the transfer of components contained in the adhesive layer to the surface of the adhered object can be suppressed. As a result, the aforementioned color difference ΔE can be reduced. ＊ ab Specifically, by using polymer-type additives or additives capable of cross-linking, the transfer of components contained in the adhesive layer to the surface of the adherend can be inhibited. Furthermore, for example, in methods for adjusting the glass transition temperature of the adhesive, by increasing the glass transition temperature of the adhesive, the transfer of components contained in the adhesive layer to the surface of the adherend can be suppressed. As a result, the aforementioned color difference ΔE can be reduced. ＊ ab Furthermore, for example, in methods for adjusting the glass transfer temperature of additives, by increasing the glass transfer temperature of the additives, the transfer of components contained in the adhesive layer to the surface of the adhered object can be suppressed. As a result, the aforementioned color difference ΔE can be reduced. ＊ ab . Furthermore, for example, in methods for adjusting the compatibility of adhesives and additives, by improving the compatibility of adhesives and additives, the transfer of components contained in the adhesive layer to the surface of the adhered body can be suppressed. As a result, the aforementioned color difference ΔE can be reduced. ＊ ab Specifically, the compatibility of adhesives and additives can be adjusted by modifying their polarity, molecular weight, composition ratio, and mixing method. For example, in methods involving the addition of crosslinking agents, by reacting the functional groups of the adhesive with the crosslinking agent, the number of unreacted functional groups that have not reacted with the crosslinking agent can be reduced, for example, the reaction between the metal surface and the functional groups can be suppressed. This reduces the aforementioned color difference ΔE. ＊ ab Furthermore, the adhesive agent cross-links through a cross-linking agent, thereby increasing its cohesive strength. This inhibits the transfer of components from the adhesive layer to the surface of the adhered object, resulting in a reduction of the aforementioned color difference ΔE. ＊ ab . Furthermore, for example, in methods for adjusting the types of functional groups in the adhesive, functional groups that can react with the crosslinking agent can be designed to be functional groups that are difficult to react with copper. In this way, even if unreacted functional groups that have not reacted with the crosslinking agent remain, the reaction between copper and functional groups can be suppressed. As a result, the aforementioned color difference ΔE can be reduced. ＊ ab . Furthermore, for example, in methods for adjusting the types of functional groups in energy line hardening compounds, by setting functional groups that can react with energy line hardening functional groups or crosslinking agents as functional groups that are difficult to react with copper, the reaction between copper and functional groups can be suppressed. As a result, the aforementioned color difference ΔE can be reduced. ＊ ab Furthermore, for example, in methods for adjusting the number of functional groups in energy-line hardening compounds, by reducing the number of functional groups that can react with energy-line hardening functional groups or crosslinking agents, the reaction between copper and functional groups can be suppressed. This reduces the aforementioned color difference ΔE. ＊ ab . In methods for adjusting the crosslinking degree of adhesives, increasing the crosslinking degree of the adhesive enhances the cohesive force, thereby inhibiting the transfer of components contained in the adhesive layer to the surface of the adhered body. As a result, the aforementioned color difference ΔE can be reduced. ＊ ab . In the method of depositing a primer layer between a substrate and an adhesive layer, the primer layer can suppress the transfer of components contained in the substrate to the surface of the adherend via the adhesive layer, thereby reducing the aforementioned color difference ΔE. ＊ ab . Furthermore, in the semiconductor processing adhesive tape of the present invention, the adhesion force to the SUS plate before energy line irradiation is preferably 1 N / 25 mm or more, more preferably 3 N / 25 mm or more, and even more preferably 5 N / 25 mm or more. By ensuring that the adhesion force to the SUS plate is within the aforementioned range, the adherend can be sufficiently fixed to the semiconductor processing adhesive tape before energy line irradiation. On the other hand, there is no particular limitation on the upper limit of the adhesion force to the SUS plate. Here, the adhesion of the SUS sheet can be measured according to Method 1 of JIS Z0237:2009 (Test Method for Adhesive Tape-Sheet Material), which involves peeling the tape and sheet relative to a stainless steel test plate at a 180° angle at a temperature of 23°C and a humidity of 50%RH. The peeling is performed along the length of the test piece under the conditions of a width of 25 mm, a peel angle of 180°, and a peel speed of 300 mm / min. The SUS sheet can be made of SUS304 stainless steel with a BA (Bright Annealing) finish, a thickness of 1.5 mm, a width of 100 mm, and a length of 150 mm. Furthermore, in the semiconductor processing adhesive tape of the present invention, the adhesion to the SUS board after energy line irradiation is preferably 2 N / 25 mm or less, and more preferably 1 N / 25 mm or less. By ensuring that the adhesion to the SUS board after energy line irradiation is within the above range, the adhered object can be easily peeled off from the semiconductor processing adhesive tape after energy line irradiation. On the other hand, the lower limit of the adhesion to the SUS board after energy line irradiation is not particularly limited, and for example, it can be set to 0.01 N / 25 mm or more. Here, the adhesion of the adhesive tape to the SUS board after energy line irradiation can be measured by the following method. First, the adhesive layer of the semiconductor processing adhesive tape is irradiated with energy lines to harden it. At this time, for example, the energy lines can be irradiated from the substrate side of the semiconductor processing adhesive tape. Then, the adhesion of the adhesive tape to the SUS board after energy line irradiation can be measured by method 1 of test method according to JIS Z0237:2009 (test method for adhesive tapes and sheets) (a test method of peeling the tape and sheet relative to a stainless steel test plate at 180° at a temperature of 23°C and a humidity of 50%RH), under the conditions of a width of 25 mm, a peel angle of 180°, and a peel speed of 300 mm / min, peeling along the length of the test piece. The SUS board can be SUS304, with a surface finish of BA, a thickness of 1.5 mm, a width of 100 mm, and a length of 150 mm. 2. Adhesive Layer The adhesive layer in this invention is disposed on one side of a substrate and is a component with energy line hardening properties. The energy line hardening adhesive layer reduces its adhesive strength by being hardened using energy line irradiation. In the energy line hardening adhesive layer, the adhered object can be fixed by its initial adhesive strength. Furthermore, in the energy line hardening adhesive layer, the adhesive strength is reduced and the peelability is improved by irradiating it with energy lines, thus allowing the adhered object to be peeled off or transferred. Examples of energy rays include: far-ultraviolet, ultraviolet, near-ultraviolet, and infrared rays; electromagnetic waves such as X-rays and gamma rays; and electron beams, proton beams, and neutron rays. Among these, from the perspective of versatility, ultraviolet rays and electron beams are preferred, with ultraviolet rays being even more preferred. As an adhesive layer, there are no particular limitations as long as it satisfies the aforementioned adhesion requirements. For example, it may contain at least a resin (adhesive agent) and an energy-curing compound. By including an energy-curing compound in the adhesive layer and using energy rays to harden the energy-curing compound, the adhesion can be reduced, and the cohesive force can be increased, thus making peeling easier. (1) Resin (Adhesive Main Agent) Examples of resins (adhesive main agents) commonly used as adhesive main agents include acrylic resins, polyester resins, polyimide resins, and silicone resins. Among these, acrylic resins are preferred. By using acrylic resins, the amount of paste residue remaining on the adherend can be reduced. Therefore, the adhesive layer preferably contains at least an acrylic resin, a power line curing compound, and a crosslinking agent. Within the adhesive layer, the acrylic resin typically exists as a crosslinked body formed by crosslinking acrylic resins with a crosslinking agent, or it may contain a single component of acrylic resin along with the crosslinked body. (Acrylic resin) There is no particular limitation on the acrylic resin; examples include: (meth)acrylate polymers obtained by homopolymerization of (meth)acrylate; and (meth)acrylate copolymers obtained by copolymerizing (meth)acrylate with other monomers as the main component. Among these, (meth)acrylate copolymers are preferred. Specific examples of (meth)acrylate and other monomers include those disclosed in Japanese Patent Application Publication No. 2012-31316. Other monomers may be used alone or in combination of two or more. Among them, as an acrylic resin, the following can be suitably used: a (meth)acrylate copolymer obtained by copolymerizing the above-mentioned (meth)acrylate with a copolymerizable hydroxyl-containing monomer, with (meth)acrylate as the main component; or a (meth)acrylate copolymer obtained by copolymerizing the above-mentioned (meth)acrylate with a copolymerizable hydroxyl-containing monomer and a carboxyl-containing monomer, with (meth)acrylate as the main component. Furthermore, in this specification, (meth)acrylic acid means at least one of acrylic acid and methacrylic acid. There are no particular limitations on the hydroxyl-containing monomers and carboxyl-containing monomers that can be copolymerized. For example, the hydroxyl-containing monomers and carboxyl-containing monomers disclosed in Japanese Patent Application Publication No. 2012-31316 can be used. The above ΔE can be controlled by adjusting the molecular weight of acrylic resins. ＊ ab Specifically, as mentioned above, by increasing the molecular weight of acrylic resins, the aforementioned ΔE can be reduced. ＊ ab The weight-average molecular weight of the acrylic resin is preferably between 100,000 and 2,000,000, and more preferably between 200,000 and 1,000,000. By keeping the weight-average molecular weight of the acrylic resin within the above range, the amount of paste residue or contamination on the adherend can be reduced. In this specification, the weight-average molecular weight is a polystyrene conversion value determined by gel permeation chromatography (GPC). The weight-average molecular weight can be determined, for example, using a measuring apparatus such as the HLC-8220GPC manufactured by Tosoh Corporation, a column such as the TSKGEL-SUPERMULTIPORE-HZ-M manufactured by Tosoh Corporation, THF (tetrahydrofuran) as the solvent, and standard polystyrene with molecular weights of 1050, 5970, 18100, 37900, 96400, and 706000 as a standard. Furthermore, by adjusting the glass transfer temperature of the acrylic resin, the aforementioned ΔE can be controlled. ＊ ab Specifically, as mentioned above, by increasing the glass transition temperature of acrylic resins, the aforementioned ΔE can be reduced. ＊ ab The glass transfer temperature of acrylic resins can be adjusted appropriately. Furthermore, acrylic resins can possess energy-curing properties, for example, by having energy-curing functional groups on their side chains. Preferably, these energy-curing functional groups are vinyl unsaturated bonds; examples include (meth)acrylic, vinyl, and allyl groups. (2) Energy line hardening compounds: There are no special limitations as long as the energy line hardening compounds are polymerized by irradiation of energy lines. For example, compounds with energy line hardening functional groups can be cited. Examples of energy-curing compounds include energy-curing monomers, energy-curing oligomers, and energy-curing polymers. Furthermore, energy-curing polymers are polymers different from the aforementioned resins (adhesive agents). Among these, energy-curing oligomers are preferred from the perspective of balancing adhesive strength before and after energy beam irradiation. Moreover, energy-curing monomers, energy-curing oligomers, and energy-curing polymers can be used in combination. For example, when energy-curing monomers are used in addition to energy-curing oligomers, the adhesive layer can be hardened through three-dimensional cross-linking during energy beam irradiation, thereby reducing adhesive strength and increasing cohesive force to prevent transfer to the substrate side. Furthermore, examples of energy-curing compounds include free radical polymers, cationic polymers, and anionic polymers. Among these, free radical polymers are preferred. They offer faster curing speeds, and a wide variety of compounds can be selected, allowing for easy control of properties such as adhesion before and after energy-line irradiation. In the energy-line hardening compound, the number of energy-line hardening functional groups is preferably two or more per molecule, more preferably three or more per molecule, further preferably four or more per molecule, and even more preferably five or more per molecule. If the number of energy-line hardening functional groups is within the above range, the cross-linking density of the adhesive layer after energy-line irradiation becomes sufficient, thus achieving the desired peelability. Furthermore, it can suppress contamination or paste residue caused by reduced cohesive force. There is no particular upper limit to the number of energy-line hardening functional groups. Furthermore, energy-line curable compounds may possess functional groups capable of reacting with crosslinking agents. Examples of such functional groups include hydroxyl and carboxyl groups. By reacting energy-line curable compounds with crosslinking agents and crosslinking them with resins (adhesive agents), the generation of contaminants or paste residues can be suppressed. The energy-line hardening compound is preferably a free-radical polymerizable oligomer, and more preferably a free-radical polymerizable multifunctional oligomer. Examples of free-radical polymerizable oligomers include those disclosed in Japanese Patent Application Publication No. 2012-31316. Furthermore, as an energy line hardening compound, free radical polymerizable oligomers and free radical polymerizable monomers can be used, among which free radical polymerizable multifunctional oligomers and free radical polymerizable multifunctional monomers can be used. Examples of free radical polymerizable monomers include those disclosed in Japanese Patent Application Publication No. 2010-173091. Furthermore, examples of energy-line curing compounds include: (meth)acrylate monomers, (meth)acrylate oligomers, and (meth)acrylate polymers. Additionally, examples of energy-line curing compounds include: urethane (meth)acrylates, polyester (meth)acrylates, and epoxy (meth)acrylates. Furthermore, commercially available products can be used for energy line hardening compounds. For example, Mitsubishi Chemical's "UV7620EA (molecular weight: 4100)" urethane acrylate; and Genjo Kogyo's "Artresin UN-905 (molecular weight: 50000-210000)," "Artresin UN-905DU1 (molecular weight: 26000)," "Artresin UN-951SC (molecular weight: 12500)," "Artresin UN-952 (molecular weight: 6500-9500)," "Artresin UN-953 (molecular weight: 14000-40000)," "Artresin UN-954 (molecular weight: 4200)," "Artresin H-219 (molecular weight: 25000-50000)," "Artresin H-315M (molecular weight: 6600)," and "Artresin" urethane acrylate. H-417M (molecular weight: 4000)”; 8BR-600 (molecular weight: 100000) acrylate polymer manufactured by Taisei Fine Chemical Co., Ltd.; UNIDIC V-6850 polymer acrylate manufactured by DIC Co., Ltd.; SMP-250AP (molecular weight: 20000~30000) and SMP-360A (molecular weight: 20000~30000) acrylate polymers manufactured by Kyoei Chemical Co., Ltd.; HA7975 acrylate resin manufactured by Showa Denko Materials Co., Ltd., etc. Energy line hardening compounds can be used alone or in combination of two or more. The weight-average molecular weight of the energy-curing compound is not particularly limited, but is preferably 30,000 or less, more preferably 10,000 or less, and even more preferably 8,000 or less. If the weight-average molecular weight of the energy-curing compound is within the above range, it exhibits sufficient compatibility with acrylic resins (adhesive agents), the adhesive layer exhibits the required adhesion before energy-ray irradiation, suppresses the formation of paste residue after energy-ray irradiation, and can be easily peeled off. On the other hand, the weight-average molecular weight of the energy-curing resin composition can, for example, be set to 100 or more. The content of the energy-curing compound is preferably 5 to 150 parts by mass relative to 100 parts by mass of the resin (adhesive agent), more preferably 20 to 150 parts by mass, and even more preferably 30 to 100 parts by mass. If the content of the energy-curing compound is within the above range, the cross-linking density of the adhesive layer after energy-line irradiation becomes sufficient, thus achieving the desired peelability. Furthermore, it can suppress contamination or paste residue caused by reduced cohesive strength. (3) In addition to resin (adhesive) and energy line hardening compound, the polymerization initiator adhesive layer may also contain polymerization initiator. Common photopolymerization initiators can be used as polymerization initiators. Specifically, examples include acetophenones, benzophenones, α-hydroxy ketones, benzo[a]methyl ketals, α-amino ketones, and bis(a]phosphine oxides. When using urethane acrylates as the energy-curing compound, a bis(a)phosphine-based polymerization initiator is preferred. This initiator has heat resistance, thus ensuring reliable curing of the energy-curing compound even when the adhesive composition is applied to a substrate and subjected to energy-line irradiation, even when the substrate is partially irradiated. The polymerization initiator preferably absorbs wavelengths above 230 nm, and more preferably absorbs wavelengths between 300 nm and 400 nm. This type of polymerization initiator can absorb a wide range of energy lines above 300 nm, efficiently generating active species that induce polymerization reactions in energy line hardening compounds. Therefore, even a small amount of energy line irradiation can efficiently harden the energy line hardening compound, making it easy to peel off. Furthermore, as described below, the substrate can use resins, which often absorb energy lines up to around 300 nm but transmit energy lines above around 300 nm. Moreover, in recent years, LED (Light Emitting Diode) lamps with wavelengths above 300 nm have been widely used in energy line irradiation devices. Therefore, by using a polymerization initiator that absorbs wavelengths above 230 nm, the energy line hardening compound can be hardened using energy lines that transmit through the substrate. The content of the polymerization initiator, for example, relative to 100 parts by mass of the total resin (adhesive agent) and energy line hardening compound, is preferably 0.01 parts by mass to 10 parts by mass, and more preferably 0.3 parts by mass to 6 parts by mass. If the content of the polymerization initiator does not meet the above range, the polymerization reaction of the energy line hardening compound may not occur sufficiently, resulting in excessively high adhesion of the adhesive layer after energy line irradiation, making peelability impossible. On the other hand, if the content of the polymerization initiator exceeds the above range, the cohesive force may decrease, leading to contamination or paste residue. (4) In addition to resin (adhesive main agent) and energy line hardening compound, the cross-linking agent adhesive layer may also contain cross-linking agent. The crosslinking agent is not particularly limited as long as it enables crosslinking between the resins (adhesives). It can be appropriately selected based on the type of resin (adhesive), etc. Examples include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, and metal chelate-based crosslinking agents. Specific examples of isocyanate-based and epoxy-based crosslinking agents can be found in Japanese Patent Application Publication No. 2012-31316. Two or more crosslinking agents can be used alone or in combination. The content of the crosslinking agent can be appropriately set according to the type of crosslinking agent. For example, relative to 100 parts by weight of resin (adhesive), it is preferably 0.01 parts by weight to 15 parts by weight, and more preferably 0.01 parts by weight to 10 parts by weight. If the content of the crosslinking agent does not meet the above range, there will be poor adhesion, or the adhesive layer will agglomerate and break down during peeling or transfer of the adhered body, resulting in paste residue. On the other hand, if the content of the crosslinking agent exceeds the above range, the crosslinking agent will remain as unreacted monomers in the adhesive layer after energy beam irradiation, resulting in contamination or paste residue due to reduced cohesion. (5) The adhesive layer may contain various additives as needed. Examples of additives include: adhesive agents, antistatic agents, plasticizers, silane coupling agents, metal chelating agents, surfactants, antioxidants, ultraviolet absorbers, colorants, preservatives, defoamers, wetting modifiers, and adhesion modifiers. The above ΔE can be controlled by adjusting the glass transfer temperature of the additive. ＊ ab Specifically, as mentioned above, by increasing the glass transition temperature of the additive, the aforementioned ΔE can be reduced. ＊ ab The glass transition temperature of the additive is not particularly limited, but is preferably between 5°C and 150°C, and more preferably between 10°C and 120°C. By keeping the glass transition temperature of the additive within the above range, the aforementioned ΔE can be achieved. ＊ ab The predetermined range can be easily adjusted. When the adhesive layer contains additives, it is preferable that the glass transfer temperature of at least one additive is within the above-mentioned range. Furthermore, by adjusting the molecular weight of the additives, the aforementioned ΔE can be controlled. ＊ ab Specifically, as mentioned above, by increasing the molecular weight of the additive, the aforementioned ΔE can be reduced. ＊ ab There is no particular limitation on the weight average molecular weight of the additives; for example, it can be between 100 and 200,000, or between 500 and 300,000. Furthermore, as mentioned above, the adhesive layer may contain an adhesive modifier. Examples of adhesive modifiers include acrylic block copolymers and polyester resins. Examples of acrylic block copolymers include the KURARITY series manufactured by Kuraray Corporation (e.g., "LA4285 (Mw: approximately 65,000)", "LA2250 (Mw: approximately 67,000)", "LA2140 (Mw: approximately 125,000)", "LA3320 (Mw: approximately 115,000)"). Furthermore, examples of polyester resins include: the Vylon series manufactured by Toyobo Corporation (e.g., "Vylon200 (Mn: approx. 17000)", "Vylon600 (Mn: approx. 16000)", etc.), and the Elitel series manufactured by Unitika Corporation (e.g., "Elitel UE3210 (Mw: approx. 20000)", "Elitel UE9200 (Mw: approx. 15000)", etc.). Furthermore, by adjusting the content of additives, the aforementioned ΔE can be controlled. ＊ ab Specifically, when the molecular weight of the additive is large, reducing the amount of the additive can decrease the aforementioned ΔE. ＊ ab The amount of additives can be adjusted appropriately. (6) Thickness and formation method of adhesive layer The thickness of adhesive layer is only required to obtain sufficient adhesion and allow energy lines to pass through to the interior, for example, 3 μm or more and 50 μm or less, preferably 5 μm or more and 40 μm or less. Examples of methods for forming an adhesive layer include: coating an adhesive composition onto a substrate; or coating an adhesive composition onto a release liner to form an adhesive layer, and then bonding the adhesive layer to the substrate. 3. Substrate: The substrate in this invention is a component that supports the above-mentioned adhesive layer. There are no particular limitations on the substrate, but it is preferable to harden the adhesive layer by irradiating the substrate side of the semiconductor processing adhesive tape with an energy line, thereby reducing the adhesion of the adhesive layer. Therefore, the substrate is preferably one that can be irradiated with an energy line. The Young's modulus of the substrate can be, for example, below 2000 MPa, below 1000 MPa, or below 700 MPa. Furthermore, the Young's modulus of the substrate is preferably above 20 MPa, more preferably above 30 MPa, and even more preferably above 40 MPa. Preferably, the substrate is expandable. If the Young's modulus of the substrate is too low, there is a possibility that the substrate becomes extremely soft, making it difficult to uniformly expand the adhesive tape for semiconductor processing. Here, the Young's modulus of the substrate can be determined according to JIS K7127. The specific test conditions are shown below. • Test piece: Test piece type 5 • Grip distance: 60 mm • Tensile speed: 100 mm / min As a tensile testing machine, for example, the "Tensilon RTF1150" manufactured by A&D can be used. The preferred materials for the substrate are those that meet the above-mentioned characteristics. Examples include: olefin resins such as low-density polyethylene, high-density polyethylene, polypropylene, polybutene, polymethylpentene, polybutadiene, ethylene-vinyl acetate copolymer, ionomer resins, ethylene-(meth)acrylic acid copolymer, and ethylene-(meth)acrylic acid copolymer; vinyl chloride resins such as polyvinyl chloride and vinyl chloride copolymer; polyester resins such as polyethylene terephthalate and polybutylene terephthalate; urethane resins; polystyrene resins; polycarbonate resins; and fluoropolymers. Furthermore, the preferred materials for the substrate include: thermoplastic elastomers such as olefin elastomers, vinyl chloride elastomers, polyester elastomers, styrene elastomers, urethane elastomers, acrylic elastomers, and amide elastomers; and rubber-based materials such as isoprene rubber, butadiene rubber, styrene-butadiene rubber, chloroprene rubber, acrylonitrile-butadiene rubber, butyl rubber, halogenated butyl rubber, acrylic rubber, urethane rubber, and polysulfide rubber. These can be used individually or in combination of two or more. Preferably, the resins are olefin-based resins, polyester resins, or vinyl chloride resins. That is, the substrate is preferably composed of an olefin-based resin, a polyester resin, or a vinyl chloride resin. Vinyl chloride resin is softened by adding a plasticizer; therefore, by using a so-called soft vinyl chloride resin, a substrate without a yield point can be prepared as described below. On the other hand, olefin-based resins or polyester resins do not contain as much plasticizer as vinyl chloride resins, thus allowing for a reduction in the amount of additives, as described above regarding ΔE. ＊ ab The tendency to shrink. Examples of vinyl chloride resins include: polyvinyl chloride, chlorinated polyvinyl chloride, polyvinylidene chloride, chlorinated polyethylene, vinyl chloride-vinyl acetate copolymer, vinyl chloride-ethylene copolymer, vinyl chloride-propylene copolymer, vinyl chloride-styrene copolymer, vinyl chloride-isobutylene copolymer, vinyl chloride-vinylidene chloride copolymer, vinyl chloride-styrene-maleic anhydride terpolymer, vinyl chloride-styrene-acrylonitrile terpolymer, vinyl chloride-butadiene copolymer, vinyl chloride-isoprene copolymer, vinyl chloride-vinyl chloride copolymer, vinyl chloride-vinylidene chloride-vinyl acetate terpolymer, vinyl chloride-maleic ester copolymer, vinyl chloride-methacrylate copolymer, vinyl chloride-acrylonitrile copolymer, vinyl chloride-various vinyl ether copolymers, and other chlorinated resins; mixtures of these chlorinated resins; mixtures of these chlorinated resins with other non-chlorinated resins, block copolymers, graft copolymers, etc. Other examples of chlorine-free resins include: acrylonitrile-styrene copolymer, acrylonitrile-styrene-butadiene terpolymer, ethylene-vinyl acetate copolymer, ethylene-(meth)acrylate copolymer, polyester, etc. The substrate may also contain various additives such as plasticizers, fillers, antioxidants, light stabilizers, antistatic agents, lubricants, dispersants, flame retardants, and colorants, as needed. Furthermore, by adjusting the molecular weight of the additives, the aforementioned ΔE can be controlled. ＊ ab Specifically, by increasing the molecular weight of the additive, the aforementioned ΔE can be reduced. ＊ ab The molecular weight of the additives can be adjusted appropriately. Furthermore, by adjusting the content of additives, the aforementioned ΔE can be controlled. ＊ ab Specifically, when the molecular weight of the additive is small, the aforementioned ΔE can be reduced by decreasing the amount of the additive. ＊ ab The content of additives can be adjusted appropriately. For example, when the substrate contains vinyl chloride resin, reducing the content of plasticizer can reduce the aforementioned ΔE. ＊ ab . The substrate can be a single layer or multiple layers. To improve adhesion to the adhesive layer, a surface treatment may be applied to the adhesive layer side of the substrate. There are no particular limitations on the surface treatment; examples include: corona treatment, plasma treatment, ozone treatment, flame treatment, primer treatment, and alkaline treatment. There is no particular limitation on the thickness of the substrate; for example, it can be 20 μm to 500 μm, 40 μm to 350 μm, or 50 μm to 200 μm. If the thickness of the substrate is within the above range, a substrate with sufficient strength that is easy to expand and does not break can be manufactured. 4. Other components of the semiconductor processing adhesive tape constituting the present invention may include, in addition to the substrate and adhesive layer described above, other components as needed. The semiconductor processing adhesive tape of the present invention has a release film on the side of the adhesive layer opposite to the substrate. The release film protects the adhesive layer. Furthermore, the semiconductor processing adhesive tape of the present invention may have a base coating layer between the substrate and the adhesive layer. The base coating layer improves the adhesion between the substrate and the adhesive layer. Moreover, the base coating layer inhibits the transfer of components contained in the substrate through the adhesive layer to the adhered object, thereby reducing the aforementioned ΔE. ＊ ab In cases where the substrate contains vinyl chloride resin, it is preferable to have a primer layer disposed between the substrate and the adhesive layer. 5. Applications The adhesive tape for semiconductor processing of the present invention can be suitably used as an adhesive tape for temporarily fixing or protecting parts, such as cutting tape, back grinding tape, etc. Figures 2(a) to (e) are step diagrams illustrating an example of a semiconductor manufacturing method using semiconductor processing adhesive tape, where the semiconductor processing adhesive tape is used as a dicing tape. First, as shown in Figure 2(a), a wafer 11 with circuitry formed is attached to the semiconductor processing adhesive tape 10. Then, as shown in Figure 2(b), a dicing step is performed to cut (divide) the wafer 11 with circuitry formed into wafers 12. Next, as shown in Figure 2(c), a widening step is performed to stretch the semiconductor processing adhesive tape 10, thereby increasing the spacing between the wafers 12. Then, although not shown, by irradiating the adhesive layer 2 of the semiconductor processing adhesive tape 10 with energy lines to harden it, thereby reducing the adhesive force, as shown in Figure 2(d), a picking step is performed to peel the wafers 12 from the semiconductor processing adhesive tape 10 and pick up the wafers 12. Then, as shown in FIG2(e), a mounting (die bonding) step is performed to attach the picked-up chip 12 to the substrate 30. Figures 3(a) to (d) are step diagrams illustrating another example of a semiconductor manufacturing method using semiconductor processing adhesive tape, where the semiconductor processing adhesive tape is used as a dicing tape. First, as shown in Figure 3(a), a wafer 11 with circuitry formed is attached to the semiconductor processing adhesive tape 10. Then, as shown in Figure 3(b), a dicing step is performed to cut (divide) the wafer 11 with circuitry formed into a wafer 12. Next, as shown in Figure 3(c), a transfer tape 40 is attached to the side of the wafer 12 opposite to the semiconductor processing adhesive tape 10. Although not shown, the adhesive layer 2 of the semiconductor processing adhesive tape 10 is hardened by irradiating energy lines, thereby reducing the adhesion. Then, as shown in Figure 3(d), a transfer step is performed to peel the semiconductor processing adhesive tape 10 from the wafer 12 and transfer the wafer 12 to the transfer tape 40. Furthermore, the present invention is not limited to the embodiments described above. The embodiments described above are illustrative, and any embodiment having a substantially identical structure and performing the same effect as the technical concept described in the claims of this invention is included within the technical scope of this invention. [Examples] The following examples and comparative examples further illustrate the present invention. [Materials] The following are materials used in adhesive compositions. • Adhesive A (acrylate copolymer, weight average molecular weight approximately 500,000, solids content 23%) • Adhesive B (acrylate copolymer, weight average molecular weight approximately 800,000, solids content 20%) • Carbamate acrylate A (UV-curable compound, 10-functional, molecular weight 500–1300) • Carbamate acrylate B (UV-curable compound, 9-functional, molecular weight 4100, active ingredient 65%) • Carbamate acrylate C (UV-curable compound, 6-functional, molecular weight 4200, active ingredient 60%) • Carbamate acrylate D (UV-curable compound, 10-functional, molecular weight 2000) • Pentaerythritol triacrylate (a mixture containing pentaerythritol tetraacrylate as the main component) (UV-curable compound, 3–4-functional, molecular weight 280–360) • Polymerization initiator (Omnirad manufactured by IGM Resins) 819”) • Crosslinking agent A (isocyanate-based curing agent (toluene diisocyanate (TDI)-based adduct type (trimethylolpropane adduct)), solids content 75%) • Crosslinking agent B (epoxy-based curing agent) • Crosslinking agent C (metal chelate-based curing agent) • Adhesion modifier A (acrylic block copolymer (methyl methacrylate-butyl acrylate-methyl methacrylate triblock copolymer), weight average molecular weight approximately 65,000) • Adhesion modifier B (acrylic copolymer) [Example 1] 100 parts by weight of adhesive A, 50 parts by weight of urethane acrylate A, 3 parts by weight of crosslinking agent A, and 1.5 parts by weight of polymerization initiator were diluted with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) to obtain a solid content of 25%, and the mixture was fully dispersed to prepare an adhesive composition. The adhesive composition is applied to a release-treated polyethylene terephthalate (PET) release film to a thickness of 10 μm after drying, and then dried in an oven at 110°C for 3 minutes to form an adhesive layer. Subsequently, a substrate (polyethylene terephthalate (PET) film, manufactured by Toyobo Co., Ltd., "TA051", with a thickness of 50 μm) is laminated onto the aforementioned adhesive layer and aged at 50°C for 3 days to produce an adhesive tape for semiconductor processing. [Example 2] An adhesive composition was prepared in the following manner, with the thickness of the adhesive layer set to 20 μm, and the following substrate was used. Otherwise, an adhesive tape for semiconductor processing was fabricated in the same manner as in Example 1. The adhesive composition is prepared by diluting 100 parts by weight of adhesive B, 40 parts by weight of urethane acrylate B, 30 parts by weight of urethane acrylate C, 0.35 parts by weight of crosslinking agent B, 0.2 parts by weight of crosslinking agent C, 6 parts by weight of polymerization initiator, and 0.5 parts by weight of adhesion modifier A with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) to achieve a solid content of 25%. Furthermore, as a substrate, a resin composition containing 70 parts by weight of vinyl chloride resin, 25 parts by weight of plasticizer, and 0.3 parts by weight of nonylphenol is used to form a film by calendering, thereby producing a polyvinyl chloride (PVC) film with a thickness of 90 μm. [Example 3] An adhesive composition was prepared in the following manner, with the thickness of the adhesive layer set to 20 μm, and the following substrate was used. Otherwise, an adhesive tape for semiconductor processing was fabricated in the same manner as in Example 1. The adhesive composition is prepared by diluting 100 parts by weight of adhesive B, 75 parts by weight of urethane acrylate A, 0.35 parts by weight of crosslinking agent B, 7.5 parts by weight of polymerization initiator, 40 parts by weight of adhesion modifier A, and 40 parts by weight of adhesion modifier B with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) to obtain a solid content of 25%, thereby ensuring sufficient dispersion. Furthermore, as a substrate, a resin composition containing 70 parts by weight of vinyl chloride resin, 25 parts by weight of plasticizer, and 0.3 parts by weight of nonylphenol is used to form a film by calendering, thereby producing a polyvinyl chloride (PVC) film with a thickness of 70 μm. [Example 4] The thickness of the adhesive layer was set to 30 μm, and a polyethylene (PE) film (Esmer VPM-S manufactured by Matek Corporation of Japan, with a thickness of 100 μm) was used as the substrate. Otherwise, the adhesive tape for semiconductor processing was made in the same manner as in Example 1. [Example 5] An adhesive composition was prepared in the following manner, with the thickness of the adhesive layer set to 20 μm, and a polyvinyl chloride (PVC) film with the same thickness of 90 μm as in Example 2 was used. Otherwise, an adhesive tape for semiconductor processing was made in the same manner as in Example 1. An adhesive composition is prepared by diluting 100 parts by weight of adhesive A, 50 parts by weight of pentaerythritol triacrylate, 3 parts by weight of crosslinking agent A, and 5 parts by weight of polymerization initiator with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) to obtain a solid content of 25%. [Example 6] An adhesive composition was prepared in the following manner, with the thickness of the adhesive layer set to 20 μm and a polyvinyl chloride (PVC) film with the same thickness of 90 μm as in Example 2. Otherwise, an adhesive tape for semiconductor processing was made in the same manner as in Example 1. An adhesive composition is prepared by diluting 100 parts by weight of adhesive A, 75 parts by weight of pentaerythritol triacrylate, 3 parts by weight of crosslinking agent A, and 7.5 parts by weight of polymerization initiator with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) to obtain a solid content of 25%. [Example 7] An adhesive composition was prepared in the following manner, with the thickness of the adhesive layer set to 20 μm and a polyvinyl chloride (PVC) film with the same thickness of 90 μm as in Example 2. Otherwise, an adhesive tape for semiconductor processing was made in the same manner as in Example 1. An adhesive composition is prepared by diluting 100 parts by weight of adhesive A, 50 parts by weight of urethane acrylate D, 3 parts by weight of crosslinking agent A, and 5 parts by weight of polymerization initiator with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) to obtain a solid content of 25%. [Example 8] An adhesive composition was prepared in the manner described below, except that an adhesive tape for semiconductor processing was made in the same manner as in Example 1. An adhesive composition is prepared by diluting 100 parts by weight of adhesive A, 50 parts by weight of urethane acrylate D, 3 parts by weight of crosslinking agent A, and 5 parts by weight of polymerization initiator with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) to obtain a solid content of 25%. [Comparative Example 1] An adhesive composition was prepared in the following manner, with the thickness of the adhesive layer set to 20 μm, and the following substrate was used. Otherwise, an adhesive tape for semiconductor processing was fabricated in the same manner as in Example 1. The adhesive composition is prepared by diluting 100 parts by weight of adhesive B, 75 parts by weight of urethane acrylate A, 0.35 parts by weight of crosslinking agent B, 7.5 parts by weight of polymerization initiator, 40 parts by weight of adhesion modifier A, and 40 parts by weight of adhesion modifier B with a mixed solvent of methyl ethyl ketone and toluene (mixing ratio 1:1) to obtain a solid content of 25%, thereby ensuring sufficient dispersion. Furthermore, as a substrate, a resin composition containing 70 parts by weight of vinyl chloride resin, 40 parts by weight of plasticizer, and 0.5 parts by weight of stabilizer is used to form a film by casting to produce a polyvinyl chloride (PVC) film with a thickness of 70 μm. [Comparative Example 2] The thickness of the adhesive layer was set to 20 μm, and the following substrate was used. Otherwise, the adhesive tape for semiconductor processing was fabricated in the same manner as in Example 1. As a substrate, a resin composition containing 70 parts by weight of vinyl chloride resin, 40 parts by weight of plasticizer and 0.5 parts by weight of stabilizer is used to form a film with a thickness of 70 μm by casting. [Assessment] (1) Color difference ΔE ＊ ab First, the semiconductor processing adhesive tape is cut into pieces with a width of at least 40 mm and a length of at least 100 mm. Then, the glossy surface of the copper foil ("RCF-T5B", 35 μm thickness, manufactured by Fukuda Metal Foil Powder Industry Co., Ltd.) is wiped with isopropyl alcohol (IPA) to ensure thorough drying. Next, under conditions of 25℃±5℃, humidity 40%RH to 60%RH, and UV protection, the release film of the semiconductor processing adhesive tape is peeled off, exposing the adhesive layer. A 2 kg roller is then used to roll the tape back and forth twice to adhere the adhesive layer of the semiconductor processing adhesive tape to the glossy surface of the copper foil, thus obtaining a laminate. The laminate is then stored for 6 days under conditions of 25℃±5℃, humidity 40%RH to 50%RH, and UV protection. Finally, the cumulative light intensity of the semiconductor processing adhesive tape side of the laminate is measured to be 500 mJ / cm². 2 The adhesive layer is hardened by irradiating it with ultraviolet light. Then, the semiconductor processing adhesive tape is peeled off from the self-assembled body at a peeling speed of 300 mm / min. According to JIS Z8722, the brightness L of the adhered surface of the copper foil before the bonding tape for semiconductor processing was measured using a spectrophotometer (Spectrophotometer SE6000 manufactured by Nippon Denshoku Kogyo Co., Ltd.) and the adhered surface of the copper foil after the bonding tape for semiconductor processing was peeled off. ＊ chromaticity a ＊ b ＊ Find ΔE ＊ ab The measurement conditions were set as follows: D65 light source, 10° field of view, and reflectance measurement. When measuring the color of the adhesive surface of the copper foil before bonding with the semiconductor processing adhesive tape, the adhesive surface of the copper foil was wiped with isopropanol and allowed to dry completely before measurement. (2) Wetting property: The wetting property of the copper foil adhered to before the semiconductor processing adhesive tape was applied and the adhered surface of the copper foil after the semiconductor processing adhesive tape was peeled off was confirmed. Specifically, a dyne pen (EnerDyne Dyne Pen Variety manufactured by Enercon) was used to draw a line on the adhered surface of the copper foil and left it for 5 seconds. The condition of retaining the ink was determined to have wetting property, and the condition of repelling the ink was determined to have no wetting property. The dyne number of the dyne pen was set to 30, 38, and 48. Regarding the adhesive surface of the copper foil before bonding with the adhesive tape used in semiconductor processing, all three dyne pens were determined to be wettable. The wettability of the adhered surface of the copper foil after the adhesive tape for semiconductor processing has been peeled off is evaluated using the following criteria: A: All three dyne pens are determined to be wettable. B: Of the three dyne pens, two are determined to be wettable, and one is determined to be non-wettable. C: Of the three dyne pens, two or more are determined to be non-wettable. (3) The adhesion of the SUS sheet was determined according to Method 1 of JIS Z0237:2009 (Test Method for Adhesive Tape-Sheet Material), which involves peeling the tape and sheet relative to a stainless steel test plate at a 180° angle at a temperature of 23°C and a humidity of 50%RH. The peeling was performed along the length of the test piece under the conditions of a width of 25 mm, a peel angle of 180°, and a peel speed of 300 mm / min. The SUS sheet used was SUS304, with a BA surface finish, a thickness of 1.5 mm, a width of 100 mm, and a length of 150 mm. (4) After energy line irradiation, the adhesion of the SUS board is first measured from the substrate side of the semiconductor processing adhesive tape, with a cumulative light intensity of 500 mJ / cm. 2 The adhesive layer is hardened by irradiating it with ultraviolet light. The adhesion of the semiconductor processing adhesive tape to the SUS board after ultraviolet irradiation is measured according to Method 1 of JIS Z0237:2009 (Adhesive Tape - Test Method for Adhesive Sheet) (a test method in which the tape and sheet are peeled off from a stainless steel test plate at 180° at a temperature of 23°C and a humidity of 50%RH). The peeling is performed along the length of the test piece under the conditions of a width of 25 mm, a peel angle of 180°, and a peel speed of 300 mm / min. The SUS board used is SUS304, with a surface finish of BA, a thickness of 1.5 mm, a width of 100 mm, and a length of 150 mm. [Table 1] In the semiconductor processing adhesive tapes of Examples 1-8, the color difference ΔE between the adhesive surface of the copper foil before the adhesive tape was applied and the adhesive surface of the copper foil after the adhesive tape was peeled off was confirmed. ＊ ab Within a predetermined range, the wettability of the copper foil's adhered surface before and after the adhesive tape for semiconductor processing remained almost unchanged. On the other hand, in the adhesive tapes for semiconductor processing in Comparative Examples 1-2, the color difference ΔE between the adhered surface of the copper foil before and after the adhesive tape for semiconductor processing was... ＊ ab The wettability of the copper foil after the adhesive tape is peeled off changes, relative to the wettability of the copper foil before the adhesive tape was applied. Furthermore, according to Examples 2 and 3, the above-mentioned ΔE ＊ ab It is not necessarily related to wettability. Therefore, this suggests that, based on the aforementioned ΔE... ＊ ab It can obtain changes in the surface state of copper foil that cannot be obtained by utilizing wettability. 1: Substrate; 2: Adhesive layer; 10: Adhesive tape for semiconductor processing; 11: Wafer; 12: Wafer; 30: Substrate; 40: Transfer tape Figure 1 is a schematic cross-sectional view showing an example of the adhesive tape for semiconductor processing in this invention. Figures 2(a) to (e) are step diagrams illustrating a semiconductor manufacturing method. Figures 3(a) to (d) are step diagrams illustrating a semiconductor manufacturing method. 1: Substrate 2: Adhesive layer 10: Adhesive tape for semiconductor processing

Claims

1. A semiconductor processing adhesive tape having a substrate and an adhesive layer with energy line hardening properties disposed on one side of the substrate, and having a color difference ΔE*ab of 2.0 or less in the L*a*b* color system as determined by the following test: The test comprises the following steps (1) to (5) in sequence: (1) attaching the adhesive layer of the semiconductor processing adhesive tape to a copper foil to form a laminate; (2) storing the laminate in an environment with a temperature of 25°C ± 5°C, a humidity of 40%RH or higher and 60%RH or lower, and with energy lines blocked for 6 days; (3) irradiating the semiconductor processing adhesive tape of the laminate with energy lines to harden the adhesive layer; (4) peeling the semiconductor processing adhesive tape off from the laminate. (5) Calculate the color difference ΔE*ab between the adhered surface of the copper foil before the adhesion of the semiconductor processing adhesive tape and the adhered surface of the copper foil after the removal of the semiconductor processing adhesive tape in the L*a*b* color system.

2. The adhesive tape for semiconductor processing, as claimed in Item 1, has an adhesion force of 1 N / 25 mm or more to the SUS board before energy line irradiation.

3. The adhesive tape for semiconductor processing, as requested in item 1 or 2, shall have an adhesion force to the SUS board of less than 2 N / 25 mm after energy line irradiation.

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