Substrate support for bevel backside deposition elimination

Abstract

An exemplary semiconductor processing system may include a chamber body comprising sidewalls and a substrate. The system may include a substrate support extending through the substrate of the chamber body. The substrate support may include a support plate defining a plurality of channels through an internal volume of the support plate. Each of the plurality of channels may include a radial portion extending outward from a central channel through the support plate. Each channel may also include a vertical portion formed at an outer region of the support plate, fluidly coupling the radial portion to a support surface of the support plate. The substrate support may include a shaft coupled to the support plate. The central channel may extend through the shaft. The system may include a fluid source coupled to the central channel of the substrate support.

Description

Technical Field

[0001] This application claims the benefit and priority of U.S. Patent Application No. 17 / 063,366, filed October 5, 2020, entitled "BEVEL BACKSIDE DEPOSITION ELIMINATION", the entire contents of which are incorporated herein by reference.

[0002] This technology relates to components and equipment used in semiconductor manufacturing. More specifically, this technology relates to processing chamber components and other semiconductor processing equipment and methods. Prior Technology

[0003] Integrated circuits may be fabricated by processes that create complex patterned material layers on a substrate surface. Creating patterned material on the substrate requires controlled methods for material formation and removal. Precursors are often delivered to the processing area and distributed to uniformly deposit or etch material onto the substrate. Many aspects of the processing chamber can affect processing uniformity, such as the uniformity of processing conditions within the chamber, the uniformity of flow through components, and other processing and component parameters. Even minute differences on the substrate can affect the formation or removal process. Furthermore, components within the chamber can affect deposition on chamber components or on the edges and back of the substrate.

[0004] Therefore, there is a need for improved systems and methods that can be used to produce high-quality components and structures. These and other needs are addressed by this technology. Summary of the Invention

[0005] An exemplary semiconductor processing system may include a chamber body comprising sidewalls and a substrate. The system may include a substrate support extending through the substrate of the chamber body. The substrate support may include a support plate defining a plurality of channels through an internal volume of the support plate. Each of the plurality of channels may include a radial portion extending outward from a central channel through the support plate. Each channel may also include a vertical portion formed at an outer region of the support plate, fluidly coupling the radial portion to a support surface of the support plate. The substrate support may include a shaft coupled to the support plate. The central channel may extend through the shaft. The system may include a fluid source coupled to the central channel of the substrate support.

[0006] In some embodiments, the fluid source may include a hydrogen-containing precursor or a halogen-containing precursor. The system may include a distal plasma source unit coupled to the fluid source. The distal plasma source unit may be configured to deliver free radical material through a central channel of a substrate support. The central channel may include a corrosion-resistant material extending through a shaft of the substrate support. A support plate may define a recessed protrusion formed at a radius to create an overhang of the substrate around the support plate. The system may include an edge ring resting on an outer portion of the support plate. The edge ring may be radially positioned outward from a vertical portion of each of a plurality of channels. The edge ring may extend over the vertical portion of each channel to form a fluid path extending over the recessed protrusion of the support plate. The system may include a shielding ring resting on the edge ring. The shielding ring may extend radially inward over a portion of the support plate and form a fluid path from the plurality of channels defined in the support plate to a substrate support region of the support plate.

[0007] Some embodiments of this technology may cover semiconductor processing systems. The system may include a chamber body comprising sidewalls and a substrate. The system may include a substrate support extending through the substrate of the chamber body. The substrate support may include a support plate defining a plurality of channels through an internal volume of a support plate. Each of the plurality of channels may include a radial portion extending outward from a central channel through the support plate. Each channel may include a vertical portion formed at an outer region of the support plate, fluidly coupling the radial portion to a support surface of the support plate. The support plate may define a fluid path along a support region of the support plate. The substrate support may include a shaft coupled to the support plate. The central channel may extend through the shaft. The system may include a fluid pump coupled to the central channel of the substrate support.

[0008] In some embodiments, the system may include a purification channel coupled to a fluid path and configured to deliver purified gas along the fluid path. A support plate may define a recessed protrusion formed at a radius to create an overhang around a substrate of the support plate. The system may include an edge ring resting on an outer portion of the support plate. The edge ring may be radially positioned outward from a vertical portion of each of the plurality of channels. The edge ring may extend over the vertical portion of each channel to form a fluid path extending over the recessed protrusion of the support plate.

[0009] Some embodiments of this technology may cover semiconductor processing methods. Methods may include forming a plasma for depositing a precursor in a processing region of a semiconductor processing chamber. Methods may include depositing material on a substrate resting on a substrate support. Methods may include allowing a purging fluid to flow through a plurality of channels formed in the substrate support. The purging fluid may restrict or remove deposited material from the edges of the substrate.

[0010] In some embodiments, circulating the purification fluid may include plasma effluent forming a purification gas. Circulating the purification fluid may include allowing the plasma effluent to flow through a plurality of channels formed in a substrate support. The plasma effluent may flow after deposition. The plasma effluent may flow during deposition. The substrate support may be a support plate defining a plurality of channels through an internal volume of a support plate. Each of the plurality of channels may include a radial portion extending outward from a central channel through the support plate. Each channel may include a vertical portion formed at an outer region of the support plate that fluidly couples the radial portion to a support surface of the support plate. The substrate support may include a shaft coupled to the support plate, through which the central channel extends. The support plate may define recessed protrusions formed at a radius to create an amount of overhang of the substrate around the support plate. The substrate support may include an edge ring resting on an outer portion of the support plate. The edge ring may be radially positioned outward from the vertical portion of each of the plurality of channels.

[0011] This technology offers several advantages over conventional systems and techniques. For example, embodiments of this technology can remove back-side deposits from a substrate while limiting damage to the back side of the substrate. Furthermore, some embodiments of this technology can limit or prevent deposits on the back side or edge regions of a substrate being processed. These and other embodiments, along with numerous advantages and features, are described in more detail below with reference to the accompanying drawings. Simple Explanation of the Diagram

[0012] A further understanding of the nature and advantages of the disclosed technology can be achieved by referring to the remainder of the specification and drawings.

[0013] Figure 1 illustrates a top plan view of an exemplary processing system according to some embodiments of the present technology.

[0014] Figure 2 illustrates a schematic cross-sectional view of an exemplary plasma system according to some embodiments of the present technology.

[0015] Figure 3 illustrates a schematic cross-sectional view of an exemplary processing chamber according to some embodiments of the present technology.

[0016] Figure 4 illustrates the operation of an exemplary method of semiconductor processing according to some embodiments of the present technology.

[0017] Figure 5 illustrates a schematic cross-sectional view of an exemplary processing chamber according to some embodiments of the present technology.

[0018] Figure 6 illustrates the operation of an exemplary method of semiconductor processing according to some embodiments of the present technology.

[0019] Several diagrams are included as illustrations. It will be understood that the diagrams are for illustrative purposes and are not considered to be to scale unless specifically stated otherwise. Furthermore, as illustrations, the diagrams are provided to aid understanding and may not include all features or information compared to a realistic representation, and may include enlarged material for illustrative purposes.

[0020] In the accompanying drawings, similar parts and / or features may have the same element symbols. Furthermore, parts of the same type may be distinguished by a letter following the element symbol to differentiate between similar parts. If only the first element symbol is used in this specification, the description applies to any of the similar parts having the same first element symbol, regardless of the letter. Implementation

[0021] Plasma-enhanced chemical vapor deposition (CVD) and thermochemical vapor deposition (TCVD) processes can excite one or more constituent precursors to facilitate film formation on a substrate. Any number of material films can be produced to create semiconductor structures, including conductive and dielectric films, as well as films for facilitating material transport and removal. For example, hard mask films can be formed to facilitate substrate patterning while protecting underlying materials held in place by other means. Furthermore, other dielectric materials can be deposited to separate transistors on the substrate or otherwise form semiconductor structures. In many processing chambers, multiple precursors can be mixed in a gas panel and delivered to the processing area of ​​the chamber where the substrate can be disposed. Although the stacked components can affect flow distribution within the processing chamber, many other process variables can similarly affect the uniformity of deposition.

[0022] While stacked components can advantageously distribute precursors into processing areas to promote uniform deposition, structures and operations designed to ensure more uniform coverage across substrates can cause deposition to extend across patterned areas of the substrate and into edge regions. Due to the flow properties within the chamber processing area, deposition can also extend to the back of the substrate. If allowed to remain on the substrate, material deposited on the back can fall onto other substrates during transport or affect downstream processing. To address this issue, conventional techniques may force a subsequent wet etching process after deposition. However, this process can have several drawbacks. For example, performing an additional etching process after deposition can increase queue time, thereby reducing system throughput. Furthermore, the selectivity between the deposited film and the underlying substrate may not be very high, which can cause substantial damage to the underlying substrate.

[0023] This technology overcomes these challenges by utilizing integrated channels and distribution paths through substrate supports. The channels can be used to deliver various materials that can limit or remove deposits that would otherwise be deposited on the edges or back of the substrate. Thus, this technology provides an improved deposition process that reduces queuing time and better protects the substrate from additional etching or back-side damage.

[0024] While the remaining disclosure will conventionally identify specific deposition processes utilizing the disclosed techniques, it will be readily understood that the system and methods are equivalently applicable to other deposition and cleaning chambers and processes that may occur within the described chambers. Therefore, the techniques should not be considered limited to use only with such specific etching processes or chambers. Before describing additional variations and modifications to this system according to embodiments of the present technology, the present technology will discuss a possible system and chamber that may include cap stack components according to embodiments of the present technology.

[0025] Figure 1 illustrates a top plan view of one embodiment of a processing system 100 for deposition, etching, baking, and curing chambers according to an embodiment. In the figure, a pair of front-opening wafer cassettes 102 supply substrates of various sizes, which are received by a robotic arm 104 and placed in a low-pressure holding region 106 prior to placement into one of the substrate processing chambers 108a-f, which are located in tandem segments 109a-c. A second robotic arm 110 is used to transport the substrate wafer from the holding region 106 to and from the substrate processing chambers 108a-f. Each substrate processing chamber 108a-f may be configured to perform multiple substrate processing operations, including, in addition to plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, orientation, or other substrate processes including annealing, ashing, etc., the formation of stacks of semiconductor materials described herein.

[0026] The substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing, and / or etching dielectric or other films on the substrate. In one configuration, two pairs of processing chambers (e.g., 108c-d and 108e-f) may be used to deposit dielectric material on the substrate, and a third pair of processing chambers (e.g., 108a-b) may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers (e.g., 108a-f) may be configured to deposit a stack of alternating dielectric films on the substrate. Any of the processes described may be performed in chambers separate from the manufacturing systems illustrated in the different embodiments. It will be understood that additional configurations of the chambers for the deposition, etching, annealing, and curing of dielectric films are contemplated by system 100.

[0027] Figure 2 illustrates a schematic cross-sectional view of an exemplary plasma system 200 according to an embodiment of the present technology. The plasma system 200 may show a pair of processing chambers 108, which may be fitted within one or more tandem segments 109 described above, and may include panels or other components or assemblies according to embodiments of the present technology. The plasma system 200 generally includes a chamber body 202 having sidewalls 212, a bottom wall 216, and an internal sidewall 201 defining a pair of processing regions 220A and 220B. Each of the processing regions 220A-220B may be similarly constructed and may include the same components.

[0028] For example, processing area 220B (whose components may also be included in processing area 220A) may include a base 228 disposed in the processing area through a channel 222 formed in the bottom wall 216 of the plasma system 200. The base 228 may provide a heater adapted to support a substrate 229 on an exposed surface of the base (such as a body portion). The base 228 may include a heating element 232, such as a resistance heating element, which can heat and control the substrate temperature at a desired processing temperature. The base 228 may also be heated by a distal heating element (such as a lamp assembly, or any other heating device).

[0029] The body of base 228 can be coupled to rod 226 via flange 233. Rod 226 can electrically couple base 228 to a power outlet or power supply box 203. Power supply box 203 may include a drive system that controls the height and movement of base 228 within processing area 220B. Rod 226 may also include a power interface to supply power to base 228. Power supply box 203 may also include an interface for power and a temperature indicator, such as a thermocouple interface. Rod 226 may include a base assembly 238 adapted for detachable coupling with power supply box 203. Circumferential ring 235 is illustrated on power supply box 203. In some embodiments, circumferential ring 235 may be adapted as a shoulder of a mechanical stop or platform configured to provide a mechanical interface between base assembly 238 and upper surface of power supply box 203.

[0030] The rod 230 is included in the channel 224 formed in the bottom wall 216 of the processing area 220B and can be used to position the substrate lifting pin 261 through the main body of the base 228. The substrate lifting pin 261 can selectively separate the substrate 229 from the base to facilitate the exchange of the substrate 229 with a robot used to transport the substrate 229 through the substrate transfer port 260 into and out of the processing area 220B.

[0031] A chamber cover 204 may be coupled to the top of a chamber body 202. The cover 204 may house one or more precursor dispensing systems 208 coupled thereto. The precursor dispensing system 208 may include a precursor inlet channel 240 that delivers reactants and cleaning precursors through a gas delivery assembly 218 into a processing area 220B. The gas delivery assembly 218 may include a gas chamber 248 having a baffle 244 disposed in the middle of a panel 246. A radio frequency (RF) source 265 may be coupled to the gas delivery assembly 218 to power the gas delivery assembly 218 to facilitate the generation of a plasma region between the panel 246 and the base 228 of the gas delivery assembly 218, which may be the processing area of ​​the chamber. In some embodiments, the RF source may be coupled to other parts of the chamber body 202, such as the base 228, to facilitate plasma generation. A dielectric isolator 258 may be disposed between the cover 204 and the gas delivery assembly 218 to prevent RF power from being conducted to the cover 204. A shielding ring 206 may be disposed on the periphery of the base 228 of the engagement base 228.

[0032] Optional cooling channels 247 may be formed in the gas box 248 of the gas distribution system 208 to cool the gas box 248 during operation. Heat transfer fluids (such as water, glycol, gas, or the like) may circulate through the cooling channels 247, allowing the gas box 248 to be maintained at a predefined temperature. A liner assembly 227 may be disposed within the processing zone 220B adjacent to the sidewalls 201, 212 of the chamber body 202 to prevent exposure of the sidewalls 201, 212 to the processing environment within the processing zone 220B. The liner assembly 227 may include a circumferential pumping cavity 225, which may be coupled to a pumping system 264 configured to discharge gases and byproducts from the processing zone 220B and control the pressure within the processing zone 220B. A plurality of discharge ports 231 may be formed on the liner assembly 227. The discharge port 231 can be configured to allow gas to flow from the treatment area 220B to the circumferential pumping cavity 225 in a manner that facilitates treatment within the system 200.

[0033] Figure 3 illustrates a schematic partial cross-sectional view of an exemplary processing system 300 according to some embodiments of the present technology. Figure 3 may show further details regarding components in system 200, such as further details regarding base 228. It will be understood that in some embodiments, system 300 includes any features or configurations of system 200 previously discussed. System 300 may be used to perform semiconductor processing operations, including depositing hard mask material or other materials as previously described, as well as other deposition, removal, or cleaning operations. System 300 may illustrate a partial view of the chamber components discussed and that may be integrated into a semiconductor processing system, and may show a view without the aforementioned cap stack components. As will be readily understood by those skilled in the art, any configuration of system 300 may also be integrated with other processing chambers or systems.

[0034] System 300 may include a processing chamber comprising a panel 305 through which precursors can be delivered for processing, and the panel may be coupled to a power source for generating plasma within the processing area of ​​the chamber. The chamber may also include a chamber body 310, which, as shown, may include sidewalls and a substrate. A base or substrate support 315 may extend through the substrate of the chamber as previously discussed. The substrate support may include a support plate 320 that supports a semiconductor substrate 322. The support plate 320 may define a plurality of features that facilitate processing operations, as will be further discussed below. For example, the support plate 320 may define a plurality of channels 325 extending through an internal portion of the support plate 320. Any number of channels 325 may be included within the support plate and may extend radially outward from a central channel 329 extending into the support plate. From the central channel 329, each channel 325 may include a radial portion 326 that provides a fluid inlet from the central channel 329 to an external portion of the support plate 320. Each channel 325 may transition from a radial portion 326 to a vertical portion 327, which may be formed in an outer region of the support plate 320. The vertical portion 327 allows each radial portion to be fluidly coupled to a surface of the support plate (such as a surface on which the substrate 322 may be placed). Multiple portions may form multiple fluid paths extending from the central channel 329 to multiple locations in an outer region of the support plate (such as a region radially outward from the substrate support surface).

[0035] Channels 325 may be formed at regular intervals and may extend equally through the support plate or may extend to different radial locations. As mentioned, any number of channels 325 may be included, and some embodiments of the present technology may include more than or about two channels, and may include more than or about four channels, or more than or about four channels, or more than or about four channels, or more than or about four channels, or more than or about four channels, or more than or about four channels, or more than or about four channels, or more than or about four channels, or more than or about four channels, or more than or about four channels, or more than or about four channels. The number of channels can affect the uniformity of distribution, as will be further described below, and more channels can improve the uniformity of fluid delivery or removal. However, increasing the number of channels can affect the uniformity of heat distribution through the support plate by removing more material to form the channels. Thus, in some embodiments, the support plate may include fewer than or about 20 channels, fewer than or about 18 channels, fewer than or about 16 channels, or fewer.

[0036] The support plate 320 may define a recessed protrusion 330 formed at an external location on the support plate. The recessed protrusion 330 may be formed at any radial location, and in some embodiments may be formed radially inward from the vertical portion 327 of the channel 325. In some embodiments, the recessed protrusion 330 may also be formed radially inward from the outer edge of a substrate (such as the substrate 322 shown) to be processed in the chamber. For example, the recessed protrusion 330 may be formed at the radius of the support plate 320 to create an overhang of the substrate 322 when placed on the support plate 320. Thus, the support surface of the support plate may extend less than the outer radial dimension of the substrate to be processed. This can provide an entrance to the back of the substrate shown. In some embodiments, the substrate support 315 may be an electrostatic chuck including one or more integrated electrodes, or a vacuum chuck including one or more vacuum chuck ports, which can ensure that the substrate remains clamped during processing operations, as will be further described below.

[0037] In some embodiments, the edge ring 335 may rest at an external location on the support plate 320. The edge ring 335 may be located at any location and may be positioned radially outward from the vertical portion 327 of the channel 325. Furthermore, as shown, in some embodiments, the edge ring may rest at a radial or outer edge of the support plate 320. The edge ring 335 may include a vertical portion and a portion extending radially inward along the support plate toward the substrate location. As shown, the inwardly extending portion of the edge ring may extend to or toward the vertical portion 327 of the channel 325. Furthermore, in some embodiments shown, the edge ring 335 may extend over or radially inward through the vertical portion 327 of each channel 325. This may form a fluid path in which fluid flowing or drawn through the channel 325 may extend along a path at least partially defined by the edge ring over the recessed protrusion 330 of the support plate. The edge ring 335 may extend to any vertical height away from the surface of the support plate and may extend to, be flush with, or exceed the height of the substrate support surface of the substrate 332 or the support plate 320. This allows fluid to flow through channel 325 to extend across the back and edge regions of the substrate being processed, which can limit or prevent deposition along these regions of the substrate. Furthermore, as will be discussed further below, an etching process can be performed to remove material that may deposit on the edge or back regions during processing in some embodiments.

[0038] In some embodiments, the processing system 300 may also include a shielding ring 340 that may rest on or extend over an edge ring 335. The shielding ring 340 may engage with the edge ring during processing. For example, in some embodiments, a substrate support may be raised to a processing position and may contact and receive the shielding ring 340. The shielding ring 340 may extend radially inward from the inner edge of the edge ring 335. The shielding ring 340 may extend radially inward over a portion of the support plate 320 and over the outer edge of the location where the substrate 322 may rest on the substrate support 315. Thus, the shielding ring 340 may extend through a fluid path formed by the edge ring 335, for example, and may form fluid paths from a plurality of channels 325 defined in the support plate 320, which may extend to the substrate support region of the illustrated support plate. This may allow fluid to be delivered through the fluid channels to block or dilute deposited material formed in the plasma or heat treatment region and may limit or prevent deposition on the edge regions of the substrate.

[0039] Support plate 320 may be coupled to shaft 345, which extends through the substrate of the chamber. Shaft 345 may provide inlets for multiple fluid and electrical connections, including a central channel 329. Central channel 329 may extend at least partially through support plate 320 and through shaft 345, thereby providing a fluid inlet to channel 325 formed within substrate support. Central channel 329 may be fluidly coupled to fluid source 350, which may supply one or more materials to central channel 329 and flow through channel 325 through a fluid path defined by edge ring 335. An optional distal plasma source 355 may be integrated, which may allow plasma-enhanced material from fluid source 350 before delivery through substrate support into the channel. For example, fluid source 350 can provide any number of materials, including inert gases, hydrogen-containing fluids (such as hydrogen), halogenated precursors including nitrogen trifluoride or any other fluorine- or chlorine-containing precursors, oxygen-containing fluids (such as oxygen), and any other materials that can flow through the central channel (channel 325) to provide edge and back effects on processing conditions.

[0040] When the distal plasma source 355 is included in the system 300, the unit can receive any material from the fluid source 350 and subsequently provide a plasma-enhanced effluent of that material through the central channel 329 of the substrate support. Because in some embodiments the material flowing through the distal plasma unit can be corrosive, such as a halogenated material, in some embodiments the central channel 329 can be formed from or contained in a corrosion-resistant material (such as stainless steel or anodizing materials, or any other material that can prevent corrosion by free radicals). Furthermore, the central channel 329 can be fluidly isolated from any other channels extending within the shaft 345 and can be fluidly isolated from the distal plasma unit 355 to the channel 325 within the support plate of the substrate support.

[0041] As previously explained, this technology can provide remedial or preventative operations to limit or prevent back and edge deposition on a substrate. Figure 4 illustrates the operation of an exemplary method 400 for semiconductor processing according to some embodiments of this technology. The method can be performed in various processing chambers, including the processing systems 200 and 300 described above, which, in embodiments of this technology, may include a substrate support having channels, edge rings, shielding rings, fluid sources, or remote plasma systems. Method 400 may include a number of optional operations that may or may not be specifically associated with some embodiments of the method according to this technology. For example, numerous operations are described to provide a broader scope of this technology, but these numerous operations are not critical to the technology or may be performed by alternative methods that would be readily understood.

[0042] Method 400 may include additional operations prior to the commencement of the listed operations. For example, semiconductor processing may be performed prior to the commencement of method 400. Processing operations may be performed in a chamber or system in which method 400 is performed, or processing may be performed in one or more other processing chambers prior to delivery of components to a cleaning system in which method 400 is performed. Once the substrate has been received in the processing chamber, such as including some or all of the components from system 300 described above, at operation 405, method 400 may include forming one or more deposition precursor plasmas in the processing region of the semiconductor processing chamber. The substrate may be positioned on a substrate support (such as support 315 described above), which may include any of the components, features, or characteristics described above. At operation 410, material may be deposited on the substrate from one or more deposition precursor plasma effluents. While conventional techniques may additionally deposit material on edge regions and the back of the substrate, this technique may utilize one or more decontamination fluids to limit or remove deposition on edge and back regions.

[0043] For example, in some embodiments, at operation 420, an inert material (such as helium, nitrogen, or argon) or a hydrogen-containing precursor (such as hydrogen) may flow through channels in the substrate support. This inert material or hydrogen-containing precursor may flow around the edge regions of the substrate, and, when a shielding ring is included, may also flow over the edge regions of the substrate. In some deposition processes for silicon- or carbon-containing films, hydrogen may be a byproduct of the deposition process. When additional hydrogen flows across the edge regions on the back and / or front sides of the substrate, a dilution effect may occur by increasing the concentration of deposition byproducts in these regions, which may inhibit or prevent deposition. For example, hydrogen may co-flow during the deposition process, such as during operations 405 and 510.

[0044] Furthermore, in some embodiments, a hydrogen-containing precursor (such as hydrogen) may flow into a distal plasma source as previously described, which may form a plasma effluent of a purified fluid at optional operation 415. At operation 420, the plasma effluent may flow through central channels 329 and 325 to flow around the edge region of the substrate along a fluid path formed by edge rings and / or shielding ring portions. As the plasma effluent flows during deposition, it may further dilute the deposition material and may react with the deposition precursor to increase the generation of byproducts at the edge region, which may limit or prevent deposition.

[0045] In some embodiments, a halogen-containing precursor can flow to perform an etching process after deposition. For example, the deposition process may deposit a certain amount of material on the edge regions and / or back of the substrate. Once deposition is complete, the halogen-containing precursor can flow into a distal plasma source fluidly coupled to a central channel through a substrate support. Plasma can be generated and plasma effluent can flow through the central channel and multiple channels (such as channel 325), which can perform an etching process on the edge regions and / or back of the substrate. Unlike conventional processes that can transfer the substrate to separate chambers and perform wet etching processes, this technique can perform etching in the same chamber after deposition and can limit the etching process to the outer regions of the substrate, which can reduce or limit the etching of material in contact with the back of the wafer.

[0046] Figure 5 illustrates a schematic bottom plan view of a portion of a processing system 500 according to some embodiments of the present technology. Figure 5 may include one or more components discussed above with respect to Figure 2 or Figure 3, and may include any component, feature, or characteristic of any component discussed above, and may show further details regarding any of the chambers. For example, system 500 may include a processing chamber including a panel 505, a chamber body 510, and a base or substrate support 515 as previously described. The substrate support may include a support plate 520 that supports a semiconductor substrate 522. The support plate 520 may define a plurality of features that facilitate processing operations as will be further discussed below, including an internal flow path 521 beneath an internal region in which the substrate 522 is supported. Furthermore, the support plate 520 may define a plurality of channels 525 extending radially outward from a central channel 529 extending into the support plate. Any of these configurations may include any features as previously discussed. For example, from the central channel 529, each channel 525 may include a radial portion 526 and a vertical portion 527, as previously described with respect to system 300 which may be similar to system 500.

[0047] The support plate 520 may define a recessed protrusion 530 formed at an external location of the support plate as described above, and this recessed protrusion may be formed to create an amount of overhang of the substrate 522 when resting on the support plate 520. In some embodiments, an edge ring 535 may rest at an external location on the support plate 520. The edge ring 535 may be located at any location and may be positioned radially outward from the vertical portion 527 of the channel 525 to create a flow path around the edge region of the substrate 522. The support plate 520 may be coupled to a shaft 545 that provides an inlet for a central channel 529 through the chamber.

[0048] In some embodiments, the central channel 529 may be fluidly coupled to a pump 550 that operates in the opposite direction to any of the cleanup, dilution, or etching processes described above. For example, without restricting or preventing the deposition precursor from entering the edge region, the pump 550 may draw the precursor through the channel 525 and out of the system. This may limit the residence time of any deposited material in the edge region, which may further limit or prevent deposition on the edge region and / or back of the substrate. Furthermore, in some embodiments, an additional cleanup source 555 (which may flow with any of the materials described above) may allow cleanup fluid to flow through an internal flow path 521 beneath an internal region where the substrate 522 can be supported. For example, one or more channels may be formed within a substrate support, or may include any number of protrusions thereon for placing the substrate or for electrostatically clamping the substrate thereto. The cleanup source 555 may allow cleanup gas to flow through the substrate support and along the back of the substrate 522. The cleanup source may flow out of the back of the substrate and may be pumped through the channel 525 and exit the chamber containing the deposited material. This limits or prevents any deposited material from entering the back of the substrate. An additional benefit of the cleaned material is that it further dilutes the deposited material and reduces the likelihood of deposition occurring within the channels 525 of the substrate support.

[0049] The chambers discussed above can be used to perform purification methods. Figure 6 illustrates the operation of an exemplary method 600 for semiconductor processing according to some embodiments of the present technology. Method 600 may include any operation or state of method 400 discussed above and may be performed in any of the previously described processing chambers, or any other processing chamber in which substrate processing may be performed. For example, as discussed above in method 400, method 600 may include forming one or more deposition precursors in plasma at operation 605, and at operation 610, including depositing material on a substrate. The substrate may be rested on a support (such as substrate support 515 described above), and the support may be fluidly coupled to a pumping system discussed for the system.

[0050] In optional operation 615, purge gas may flow along the back of the substrate. In operation 620, a pump may be engaged to purge the deposited material and the purge gas. Purge may include drawing deposited material through channels formed by a support plate passing through a substrate support as previously described, the deposited material being further diluted with the purge gas. By performing the process according to embodiments of the present technology, edge and / or back deposition can be reduced, limited, removed, or prevented. This can improve throughput and protect the substrate from additional etching operations.

[0051] In the foregoing description, several details have been set forth for illustrative purposes in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to those skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0052] With several embodiments disclosed, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents can be used without departing from the spirit of the embodiments. Furthermore, many well-known processes and elements have not been described to avoid unnecessarily obscuring the art. Therefore, the above description should not be considered as limiting the scope of the art.

[0053] Where a range of values ​​is provided, it will be understood that, unless the context explicitly indicates otherwise, the minimum fraction of each intermediate value to the lower limit unit between the upper and lower limits of that range is also specifically disclosed. This encompasses any narrower range between any mentioned value or intermediate value not mentioned in the mentioned range and any other mentioned value or intermediate value in the mentioned range. The upper and lower limits of such narrower ranges may be independently included or excluded from the range, and each range (where any limit value, no limit value, or both limit values ​​are included in the narrower range) is also technically covered, belonging to any specifically excluded limit value in the mentioned range. Where a mentioned range includes one or two limit values, the range excluding any one or both of those included limit values ​​is also included.

[0054] As used herein and in the claims of the appended patent, unless the context clearly indicates otherwise, the singular forms “a”, “an”, and “the” include plural references. Thus, for example, reference to “a channel” includes a plurality of such channels, and reference to “the fluid” includes reference to one or more fluids and their equivalents known to those skilled in the art, etc.

[0055] Furthermore, when used in this specification and the following claims, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including" are intended to specify the presence of the mentioned feature, integer, component, or operation, but such terms do not exclude the presence or addition of one or more other features, integers, components, operations, etc., or groups.

[0056] 100: Processing System 102: Front-opening wafer cassette 104: Robotic Arm 106: Fixed Area 108a: Substrate processing chamber 108b: Substrate processing chamber 108c: Substrate processing chamber 108d: Substrate processing chamber 108e: Substrate processing chamber 109a: Serial segment 109b: Serial section 109c: Serial segment 110: Second robotic arm 200: Plasma System 201: Internal sidewall 202: Main body of the chamber 203: Power Supply Box 204: Chamber cover 206: Shielding ring 208: Precursor Distribution System 212: Sidewall 216:Bottom wall 218: Gas delivery assembly 220A: Processing Area 220B: Processing Area 222: Channel 224: Channel 225: Circumferential pumping cavity 226: pole 227: Pad assembly 228: Base 229:Substrate 230: Great 231: Discharge Port 232: Heating element 233: Flange 235: Circular ring 238: Base Component 240: Precursor entry channel 244: Barrier Plate 246: Panel 247: Cooling Channel 248: Air Box 258: Dielectric Isolator 260: Substrate transfer port 261: Substrate lifting pin 264: Pumping System 265: Radio Frequency (RF) Source 300: Processing System 305: Panel 310: Main body of the chamber 315: Substrate support 320: Support plate 322: Semiconductor substrate 325: Channel 326: Radial portion 327: Vertical section 329: Central Passage 330: Depressed protrusion 335: Edge ring 340: Shielding ring 345: Shaft 350: Fluid Source 355: Remote Plasma Source 400: Method 405: Operation 410: Operation 415: Operation 420: Operation 500: Processing System 505: Panel 510: Main body of the chamber 515: Substrate support 520: Support plate 521: Internal Flow Path 522: Semiconductor substrate 525: Channel 526: Radial portion 527: Vertical section 529: Central Passage 530: Depressed protrusion 535: Edge ring 545: Shaft 550: Pump 555: Purification Source 600: Method 605: Operation 610: Operation 615: Operation 620: Operation

[0057] Domestic storage information (please note in order of storage institution, date, and number) none Overseas storage information (please note in the order of storage country, institution, date, and number) none

Claims

1. A substrate support comprising: a support plate defining a plurality of channels through an interior of the support plate, wherein each of the plurality of channels includes a radial portion extending outwardly from a central channel through the support plate and a vertical portion formed at an outer region of the support plate for fluid coupling of the radial portion to a support surface of the support plate, and wherein the support plate defines a recessed protrusion formed at a radius to generate an overhang of a substrate about the support plate; a shaft coupled to the support plate, wherein the central channel extends through the shaft; and an edge ring resting on an outer portion of the support plate, wherein the edge ring is radially outwardly positioned from the vertical channel portion of each of the plurality of channels, wherein: A flow path is defined between an edge of the support surface and the edge ring; and the flow path is fluidly coupled to an outlet fluid portion of the vertical channel portion of each of the plurality of radial channels.

2. The substrate support as claimed in claim 1, wherein the central channel can be coupled to a fluid source.

3. The substrate support as claimed in claim 1, wherein the central channel includes a corrosion-resistant material extending through the shaft of the substrate support.

4. The substrate support as claimed in claim 1, wherein the edge ring extends over the vertical portion of each channel to form a fluid path extending over the recessed protrusion of the support plate.

5. The substrate support as claimed in claim 4, further comprising a shielding ring resting on the edge ring, wherein the shielding ring extends radially inward over a portion of the support plate and forms a fluid path from the plurality of channels defined in the support plate to a substrate support region of the support plate.

6. The substrate support as claimed in claim 1, wherein each radial portion extends through the support plate by the same distance.

7. The substrate support as claimed in claim 1, wherein at least some of the radial portions extend to different radial locations on the support plate.

8. The substrate support as claimed in claim 1, wherein the radial portions are arranged at regular intervals.

9. A substrate support member comprising: a support plate defining a plurality of channels passing through an interior of the support plate, wherein: Each of the plurality of channels includes a radial portion extending outward from a central channel through the support plate, and a vertical portion formed in an outer region of the support plate to fluidly couple the radial portion to a support surface of the support plate; the support plate defines a fluid path along a support region of the support plate; and the support plate defines a recessed protrusion formed at a radius to create a sag around a substrate of the support plate; a shaft coupled to the support plate, wherein the central channel extends through the shaft; and an edge ring resting on an outer portion of the support plate, wherein the edge ring is positioned radially outward from the vertical channel portion of each of the plurality of channels, wherein: a flow path is defined between an edge of the support surface and the edge ring; and the flow path is fluidly coupled to an outlet portion of the vertical channel portion of each of the plurality of radial channels.

10. The substrate support as claimed in claim 9, further comprising a purification channel coupled to the fluid path and configured to deliver a purification gas along the fluid path.

11. The substrate support as claimed in claim 9, wherein the edge ring extends over the vertical portion of each channel to form a fluid path extending over the recessed protrusion of the support plate.

12. The substrate support as claimed in claim 9, wherein the central channel can be coupled to a fluid pump.

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