Pickup device

Abstract

The objective of this invention is to provide a pickup device that easily picks up a wafer component that is to be picked up, while simultaneously preventing the wafer component from peeling off before pickup. The device of this invention picks up a wafer component attached to a sheet via an adhesive layer, the adhesive layer having the property that the force holding the wafer component in place weakens due to heating; and the device includes: a laser heating unit that irradiates a laser beam that heats the adhesive layer onto the wafer attachment area where the wafer component to be picked up is attached; and a chuck that peels the wafer component, which is to be picked up, from the sheet after being irradiated by the laser beam and picks it up; the laser heating unit has a plurality of heating areas for heating the adhesive layer in the wafer attachment area, and the intensity of the laser beam is set to a different intensity for each heating area.

Description

Technical Field

[0001] The present invention relates to a device for picking up chip parts attached to an adhesive sheet. Prior Art

[0002] Semiconductor devices are formed by arranging a plurality of chip components to be incorporated into the device in a matrix on a semiconductor wafer (the so-called previous process), and are singulated, wired, and packaged in a process called dicing (the so-called subsequent process).

[0003] In the post-process, a stretchable adhesive sheet (also known as dicing tape or expansion sheet) is attached to the wafer before it is cut. After being cut into the size of the chip components, a suction head (also known as a picker or chuck) picks up the chip components one by one and transports them to the mounting target such as a lead frame or substrate for wiring and mounting.

[0004] In this case, the diced wafer components are held by an adhesive layer on a stretchable adhesive sheet (also known as dicing tape or expansion sheet) and picked up while the adhesive sheet is stretched (expanded). Furthermore, a method is known in the art of picking up wafer components from an adhesive sheet by using a lifting member called a needle to peel (in other words, pick up) the wafer components from the adhesive sheet.

[0005] Furthermore, in order to prevent chip components from being damaged by the lifting of the needles, a method of heating the adhesive sheet to weaken the adhesive force between the adhesive sheet and the chip components is known (for example, Patent Document 1). [Prior Art Literature] [Patent Document]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-281660 Summary of the Invention

[0007] [Problems to be solved by the invention]

[0008] In recent years, chip components have been miniaturized, with numerous chip components densely arranged on a single semiconductor wafer. This requires that the chip components, after being cut in the post-process, be picked up with a spacing of only tens to hundreds of microns.

[0009] FIG. 7 is a schematic diagram showing a positional relationship and a distribution (ie, a distribution) of a laser beam L irradiating a wafer component in an example of the prior art. FIG. 7 shows an example of the positional relationship between the wafer attaching area 23 of the wafer component Dp to be picked up and the irradiated laser beam L, as well as the distribution of the intensity B of the laser beam L. FIG.

[0010] Previously, when picking up a wafer component Dp attached to a sheet 2 via an adhesive layer 22, the adhesive layer 22 was heated over the entire surface of the wafer attachment area 23 where the wafer component Dp was attached in order to weaken the adhesion between the wafer component Dp and the adhesive layer 22. This also heated a portion 29 of the area holding the adjacent wafer component Dn, which was not the target of the pickup, by the laser beam L. This resulted in insufficient retention of the wafer component Dn, potentially causing it to peel off or shift before being picked up.

[0011] Furthermore, when the adhesive layer 22 is heated over the entire surface of the chip attaching area 23 where the chip component Dp to be picked up is attached, the chip component Dp may warp, causing problems in picking up such as loose contact of the chuck.

[0012] Therefore, the object of the present invention is to provide a pickup device that can easily pick up a chip part that becomes a pickup object and at the same time prevent the chip part from peeling off or shifting in position before picking up. [Technical means to solve the problem]

[0013] In order to solve the above problems, a device according to one aspect of the present invention is provided. Pick up the chip parts attached to the sheet through the adhesive layer, The adhesive layer has a characteristic that the force holding the chip component is weakened by heating; and the device comprises: a laser heating unit that irradiates a laser beam for heating the adhesive layer toward a wafer attaching area where a wafer component to be picked up is attached; and A chuck that peels off the wafer part that has been irradiated with a laser beam and becomes a pickup target from the sheet and picks it up; Laser heating unit, A plurality of heating areas for heating the adhesive layer are set in the chip attaching area, and the intensity of the laser beam is set to a different intensity for each heating area. [Effects of the Invention]

[0014] The chip parts to be picked up can be easily picked up, and at the same time, the chip parts before being picked up can be prevented from peeling off or position shifting. Simple diagram description

[0015] FIG1 is a schematic diagram showing the overall structure of an example of an embodiment of the present invention. FIG2 is a schematic diagram showing a main part of an example of an embodiment of the present invention. FIG3 is a schematic diagram showing the positional relationship and intensity B distribution of a laser beam L irradiated onto a wafer component Dp in one example of an embodiment of the present invention. FIG4 is a flow chart showing an example of a specific embodiment of the present invention. 5( a ) to ( d ) are schematic diagrams showing the main parts of an example of a form in which the present invention is embodied. 6( a ) to ( d ) are schematic diagrams showing a specific example and a modified example of the main part of one embodiment of the present invention. FIG. 7 is a schematic diagram showing the positional relationship and intensity B distribution of a laser beam L irradiated onto a wafer component according to an example of prior art. Implementation Method

[0016] Fig. 1 is a schematic diagram showing the overall structure of an example of a specific embodiment of the present invention. Fig. 1 shows a schematic diagram of a pickup device 1 of the present invention.

[0017] The pickup device 1 is a device for picking up the chip parts D attached to the sheet 2 . Specifically, the pickup device 1 irradiates the laser beam L into the chip attachment area 23 where the chip part D is attached to the sheet 2 via the adhesive layer 22 and picks up the chip. More specifically, the pickup device 1 includes a laser heating unit 3, a chuck 4, a sheet holding unit H, a moving unit M, an alignment camera C, and a control unit CN.

[0018] The sheet 2 holds the wafer components D in a predetermined posture and can move a plurality of singulated wafer components D at a time (ie, facilitates handling). Specifically, the sheet 2 attaches and holds the cut wafer parts D on a holding surface (e.g., the upper surface). In addition, the plurality of wafer parts D attached to the sheet 2 are sometimes appropriately distinguished from the attached wafer parts Dp and the wafer parts Dn that are not picked up.

[0019] Fig. 2 is a schematic diagram showing the main parts of an embodiment of the present invention. Fig. 2 shows a cross-sectional view of a sheet 2 to which a wafer component D to be picked up is attached. More specifically, the sheet 2 includes a base material 21 and an adhesive layer 22 , and its outer periphery is attached to the annular frame Wf. The substrate 21 is made of a resin film or the like that allows the laser beam L to pass therethrough and has elasticity. The adhesive layer 22 has a characteristic in which the force of holding the attached chip component Dp is weakened by heating. Specifically, the adhesive layer 22 includes a bonding material called an adhesive, and has a property in which the bonding force of the adhesive is reduced by heating. More specifically, the adhesive layer 22 may be an adhesive whose bonding strength is reduced by curing or softening due to heating. In addition, the area of ​​the adhesive layer 22 where the chip component D is attached (that is, the inner side of the chip component D than the outer edge) is called the chip attachment area 23.

[0020] The frame Wf holds the sheet 2 in a predetermined position, allowing for the simultaneous movement of multiple wafer components D (i.e., facilitating handling). It also secures the sheet 2 to prevent positional shifting when picking up wafer components D. Specifically, the frame Wf is made of a non-deformable resin or metal.

[0021] The sheet holding portion H holds the sheet 2 in a predetermined posture. Specifically, the sheet holding portion H is configured to hold an annular frame Wf to which the sheet 2 is attached in a predetermined posture. More specifically, the sheet holding portion H can be exemplified by a configuration in which the frame Wf is supported from the lower surface side and fixed by vacuum suction, or a configuration in which the frame Wf is fixed by sandwiching it from the upper and lower surfaces.

[0022] The laser heating unit 3 irradiates the laser beam L toward the chip attaching area 23 where the chip component Dp to be picked up is attached, thereby heating the adhesive layer 22 on the sheet 2. Specifically, the laser heating unit 3 includes a laser oscillator 31, a modulator 32, and a reflector 33. In addition, the laser beam L is distinguished into laser beams L1 to L3 and described in detail below, but is sometimes simply referred to as the laser beam L.

[0023] The laser oscillator 31 emits a laser beam L1 . Specifically, the laser oscillator 31 can be exemplified by a continuous oscillation fiber laser that emits a laser beam L1 having a near-infrared wavelength, and is connected to the control unit CN.

[0024] The modulator 32 adjusts (ie, modulates) the distribution of the intensity B of the incident laser beam L1 and outputs it. Specifically, the modulator 32 modulates the distribution of the intensity B of the emitted laser beam L2 by locally changing the phase of the incident laser beam L1. More specifically, the modulator 32 is connected to the control unit CN and performs a predetermined phase modulation, and may be, for example, a reflective spatial light phase modulation module (SLM).

[0025] The reflective mirror 33 changes the direction of the laser beam L2 emitted from the modulator 32. The laser beam L3 reflected by the reflective mirror 33 is irradiated onto the sheet 2. Specifically, the laser beam L3 heats the adhesive layer 22 on the sheet 2, making it easier for the chip part Dp to be picked up to be peeled off from the sheet 2. Furthermore, the laser heating unit 3 sets a plurality of heating areas for heating the adhesive layer 22 in the chip attachment area 23, and sets the intensity of the laser beam L3 to a different intensity for each heating area.

[0026] FIG3 is a schematic diagram illustrating the positional relationship and intensity B distribution of a laser beam L3 irradiated onto a wafer component Dp, in accordance with an embodiment of the present invention. FIG3 shows an example of the positional relationship between a wafer attachment area 23 of a wafer component Dp to be picked up and a plurality of heating areas 25a, 25b, etc. irradiated with the laser beam L3, as well as the intensity B distribution of the laser beam L3.

[0027] The moving portion M moves the sheet 2 and the laser heating portion 3 relative to each other. Specifically, the moving portion M moves the sheet holding portion H in the XY directions, stops at a predetermined position, and changes the irradiation position of the laser beam L3 irradiated to the chip component D held on the sheet 2. More specifically, the moving portion M includes a mechanism combining a ball screw and a servo motor, a linear motor, or the like, and can be exemplified by a configuration that drives the sheet holding portion H based on a command from the control portion CN.

[0028] The alignment camera C is used to detect the position of the chip part Dp. Specifically, the alignment camera C captures the chip part Dp that becomes the pickup object, and based on the captured image, detects the position and angle of the outer edge of the chip part Dp, the position of the reference part and the center of gravity, etc., calculates where the chip part Dp is located within the field of view (or even where the chip part Dp is located on the sheet 2), and outputs it as the position information of the chip part Dp. More specifically, the alignment camera C includes an imaging camera C1 and an image processing unit (not shown).

[0029] The camera C1 captures the entire or a portion of the wafer component Dp to be picked up, and outputs the captured image to the image processing unit.

[0030] The image processing unit processes the acquired image, calculates where the outer edge, reference position, center of gravity, etc. of the chip part Dp are located in the image, and outputs the position information of the chip part Dp (coordinates of the center and outer edge, etc.) to the control unit CN.

[0031] The chuck 4 peels off the chip component Dp to be picked up, which has been irradiated with the laser beam L3, from the sheet 2 and picks it up. Specifically, the chuck 4 is composed of a flat, rod-shaped member with a holding surface 41 (i.e., the side in contact with the upper surface of the wafer part Dp, also called the lower end surface) that holds the wafer part Dp. This holding surface 41 is formed with fine holes or grooves. These holes or grooves are connected to a negative pressure suction mechanism (such as a vacuum pump or ejector) via a switching valve or other means. When the negative pressure suction mechanism is activated while the wafer part Dp is in contact with the holding surface 41, a suction force is generated in the space formed by the holes or grooves and the wafer part Dp. Consequently, the wafer part Dp is attracted to the holding surface 41 of the chuck 4 and held by suction. More specifically, the chuck 4 is connected to the chuck moving portion 42 and can separate (in other words, peel) the chip part Dp from the sheet 2 by moving it away from the sheet 2 while adsorbing and holding the chip part Dp.

[0032] The chuck moving portion 42 moves the chuck 4 in the horizontal direction and the vertical direction. Specifically, the chuck moving part 42 can be exemplified by a structure in which a plurality of multi-joint robots or multi-axis robots having movable areas in the horizontal and vertical directions, or single-axis actuators are combined, and is connected to the control part CN.

[0033] The control unit CN controls each unit of the pickup device 1 . Specifically, the control unit CN has the following functions. Obtain information on the size, placement, and order of the wafer parts Dp to be picked directly or via the host computer from an inspection device in an upstream process. Control the sheet holding portion H to hold the sheet 2 frame Wf or release the holding. The irradiation position of the laser beam L3 is calculated based on the configuration information J of the chip component D, the current position of the moving part M, and the position information of the chip component Dp to be picked up obtained by the self-alignment camera C. Based on the size information of the chip component D contained in the configuration information J, a control signal is output to the modulator 32 of the laser heating unit 3 to modulate the distribution of the intensity B of the laser beam L. Control the moving part M to adjust the irradiation position of the laser beam L3 on the chip part D. A control signal for controlling the laser beam L1 is output to the laser oscillator 31 of the laser heating unit 3, and the laser beam L1 is irradiated at a predetermined intensity B for a predetermined time. The moving part M is driven to irradiate the laser beam L3 into the wafer attaching area 23 where the wafer component Dp to be picked up is attached, thereby finely adjusting (i.e., aligning) the position of the sheet holding part H (and even the wafer component Dp). Controlling the chuck moving unit 41 to move the chuck 4 to suck and hold the wafer component Dp to be picked up, or to pick up the wafer component Dp from the sheet 2. More specifically, the control unit CN is composed of a computer and its execution program.

[0034] [Action Flow] Hereinafter, the steps of picking up the chip part D attached to the sheet 2 using the above-mentioned picking device 1 will be illustrated with an example and described in detail.

[0035] FIG4 is a flow chart showing an example of a specific embodiment of the present invention.

[0036] Figure 5 is a schematic diagram showing the main parts of an embodiment of the present invention. Figures 5(a) to 5(d) show the state of picking up a wafer component D attached to a sheet 2 using the pickup device 1 of the present invention in stages.

[0037] First, the type information indicating the size, arrangement position, picking order, etc. of the chip parts D held on the sheet 2 via the adhesive layer 22 is obtained (step s1).

[0038] Next, the sheet 2 is placed on and held on the sheet holding table H (step s2: refer to FIG. 5(a)).

[0039] Afterwards, the chip part Dp that becomes the pickup object is photographed by the alignment camera C, the position information of the chip part Dp is calculated, and output to the control unit CN (step s3: refer to Figure 5(b)).

[0040] Thereafter, the moving portion 4 is controlled to move the sheet holding portion H in such a manner as to irradiate the laser beam L3 into the wafer attaching region 23 of the wafer component Dp (step s4). Then, the chuck moving portion 42 is controlled to lower the chuck 4 so that the holding surface 41 comes into close contact with the wafer component Dp to be picked up (step s5). Then, the laser beam L3 is irradiated onto the adhesive layer 22 in the chip attaching area 23 holding the chip part Dp to be picked up, thereby weakening the holding force between the chip part Dp and the adhesive layer 22 (step 6: refer to Figure 5(c)).

[0041] Afterwards, the chuck 4 is separated away from the sheet 2, and the picked-up chip component Dp is transferred to another location (step s7: refer to Figure 5(d)).

[0042] Afterwards, it is determined whether to process other wafer parts Dp (step s8). If processing is being performed, the above steps s3 to s8 are repeated. On the other hand, if no other wafer parts Dp are being processed, the sheet 2 is unloaded (step s9), and a series of processes are terminated.

[0043] Due to this structure, the pickup device 1 of the present invention can easily pick up the chip component D attached to the sheet 2, and at the same time prevent the chip component Dn from peeling off or shifting in position before picking up.

[0044] [Specific examples, variations] FIG6 is a schematic diagram showing a specific example and a modified example of the main part of one embodiment of the present invention. 6(a) to (d) show: a top view showing the positional relationship between the chip attachment area 23 and the beam heating area 25, and a specific example and variation of the positional relationship and the distribution of the intensity B of the laser beam L3. As a specific example shown in FIG6(a), a first heating region 25a is set slightly inward from the outer edge of the wafer attachment region 23, and a second heating region 25b is set further inward. Furthermore, the beam intensity B in the second heating region 25b is set higher than that in the first heating region 25a. In the variation shown in FIG6( b ), a first heating region 25 a is defined slightly inward of the outer edge of the wafer attachment area 23, a second heating region 25 b is defined further inward, and a third heating region 25 c is defined further inward. Furthermore, the beam intensity B is set to be highest in the second heating region 25 b and lower in the first heating region 25 a and the third heating region 25 c than in the second heating region 25 b. In the variation shown in FIG6(c), a heating region 25 roughly divided into three sections is set slightly inward from the outer edge of the wafer attachment area 23. Each heating region 25 includes a first heating region 25a and a second heating region 25b. In this case, the second heating region 25b is set inward from the first heating region 25a, and the beam intensity B in the second heating region 25b is set higher than that in the first heating region 25a. In the variation shown in FIG6(d), heating regions 25 are divided into nine blocks, roughly in a 3×3 matrix, slightly inward of the outer edge of the wafer attachment area 23. Each heating region 25 includes a first heating region 25a and a second heating region 25b. In this case, the second heating region 25b is located inward of the first heating region 25a, and the beam intensity B in the second heating region 25b is set higher than that in the first heating region 25a.

[0045] 6( a ) to ( d ) are exemplified above, showing an example in which the heating region 25 is set inside the outermost periphery of the wafer attaching region 23 . If it is constructed in this way, the chip attachment area 23 closer to the outermost periphery is not heated, so when picking up the chip part Dp that is the picking object, the outer periphery of the adjacent chip part Dn that is not the picking object is not heated, and the holding force of the adhesive layer 22 is not reduced, so it is better. However, in the application of the present invention, the outer edge of the wafer heating area 25 can be set to overlap the dicing line (i.e., the gap between wafer component Dp and wafer component Dn) surrounding the wafer attaching area 23. This is preferable because the outer periphery of wafer component Dn adjacent to wafer component Dp is not heated, and the holding force of the adhesive layer 22 is not reduced.

[0046] 6( b ) is shown above, and shows an example in which the intensity B of the laser beam L3 irradiated to the heating area 25 is set to be the strongest in the area inside the outermost periphery and outside the center of the wafer attachment area 23 . With this configuration, the holding force of the adhesive layer 22 acting on the outer edge of the wafer component Dp being picked up disappears, eliminating stress concentration during pickup and preventing cracks or damage to the wafer component Dp. On the other hand, since a slight amount of holding force remains near the center of the wafer component Dp, positional deviation is avoided, enabling pressure-free pickup, which is preferable.

[0047] [Other variations] In addition, in the above description, a fiber laser that emits a laser beam L1 with a near-infrared wavelength is exemplified as the laser oscillator 31, but it can be a laser beam L1 that emits a visible light wavelength, a semiconductor laser, etc., or a CO2 laser that emits a laser beam L1 with a far-infrared wavelength. At this time, the laser beam L may be of a wavelength that is appropriately selected so as to transmit through the substrate 21 , be absorbed by the adhesive layer 22 , and heat the adhesive contained in the adhesive layer 22 .

[0048] Alternatively, a wavelength can be selected as the laser beam L that transmits through the substrate 21 and adhesive layer 22 and absorbs heat from the surface of the wafer component Dp being picked up. In this case, the adhesive layer 22 may be heated and hardened or softened at the interface with the wafer component Dp due to heat propagating from the surface of the wafer component Dp, thereby reducing bonding strength, or may be heated and enlarged by bubbles contained in the adhesive, thereby reducing bonding strength.

[0049] Furthermore, in the above description, a reflective spatial light phase modulation module (SLM) is exemplified as the modulator 32 of the laser heating unit 3 . With this configuration, the distribution of the intensity B of the laser beam L3 is modulated based on the control signal output from the control unit CN, so it is easy to cope with a variety of products and is preferred. However, when dealing with a single product or allowing for product switching due to product replacement, a homogenizer or diffractive optical element (DOE) with a slight concavo-convex shape formed on the mirror surface can be used as the modulator 32. Furthermore, the homogenizer or diffractive optical element (DOE) can be of the reflective type as described above, but can also be of the transmissive type with a slight concavo-convex shape formed on the incident or exit surface of the transmissive material.

[0050] Furthermore, in the above description, the configuration is shown in which the laser beam L3 is irradiated toward the heating area 25 after the chuck 4 is brought into close contact with the wafer component Dp to be picked up. With this configuration, when the holding force of the chip attachment area 23 is almost eliminated due to the heating of the laser beam L3, the positional displacement of the chip part Dp can be prevented and the chip part Dp can be picked up, which is preferable. However, if the heating shown in Figures 6(b)-6(d) is performed, the holding force of the wafer component Dp partially remains within the wafer attachment area 23, eliminating the concern of positional shift. After heating with the laser beam L3, the chuck 4 can be brought into close contact with the wafer component Dp and picked up. Alternatively, a configuration can be employed in which the wafer component Dp is lifted off by a needle and then picked up by the chuck 4. By applying the present invention, the holding force of the wafer attachment area 23 is reduced, so even when the wafer component Dp is lifted by a needle, cracks or defects are prevented.

[0051] In addition, in the above description, the method of irradiating the base material 21 of the sheet 2 with the laser beam L for heating the adhesive layer 22 of the sheet 2 is exemplified, but a method of irradiating the laser beam L from the chip component Dp side may be used. In this case, for example, a method can be used in which the chip component Dp is directly heated by the laser beam L having a wavelength that is absorbed by the chip component Dp, and the adhesive layer 22 is heated by the transmitted heat. Alternatively, a method can be used in which the adhesive layer 22 is heated by irradiating the laser beam L having a wavelength that is transmitted through the chip component Dp and absorbed by the adhesive layer 22.

[0052] In addition, in the above description, a stretchable resin film or the like is exemplified as the base material 21 of the sheet 2, but the present invention can be applied regardless of whether it has stretchability or not.

[0053] 1: Pickup device 2: Sheet 3: Laser heating unit 4: Chuck / moving part 21: Base material 22: Adhesive layer 23: Chip attachment area 25: Heating area / beam heating area / wafer heating area 25a: 1st heating area / heating area 25b: 2nd heating area / heating area 25c: 3rd heating zone 29: Part of the area of ​​the chip parts that are not the object of picking 31: Laser Oscillator 32: Converter / Modulator 33: Reflector 41: Chuck moving part / holding surface 42: Chuck moving part B: Laser beam intensity C: Aim at the camera C1: Video camera CN:Control Department D: Chip parts Dn: Chip parts / chip parts that are not picked up Dp: Chip parts / chip parts of the picked object H: Sheet holding part / sheet holding platform L, L1, L2, L3: Laser beam M: Mobile Department Wf:Framework X,Y: direction

Claims

1. A pickup device for picking up a wafer component attached to a sheet via an adhesive layer, characterized in that: the adhesive layer has the property of reducing the force holding the wafer component in place when heated; and the pickup device comprises: a laser heating unit having a laser oscillator emitting a laser beam, a modulator for adjusting and emitting the intensity distribution of the incident laser beam, a reflector for changing the emission direction of the laser beam emitted from the modulator, and irradiating the laser beam onto a wafer attachment area to which the wafer component to be picked up is attached, thereby heating the adhesive layer; and a chuck for peeling off from the sheet and picking up the wafer component to which the laser beam has been irradiated, thereby picking up the wafer component; wherein the laser heating unit has a plurality of heating areas for heating the adhesive layer in the wafer attachment area, and the intensity of the laser beam is set to a different intensity for each of the heating areas.

2. A pickup device for picking up a wafer component attached to a sheet via an adhesive layer, characterized in that: the adhesive layer has the property of reducing the force holding the wafer component in place when heated; and the pickup device comprises: a laser heating unit that irradiates a laser beam heating the adhesive layer onto a wafer attachment area to which the wafer component to be picked up is attached; and a chuck that peels off from the sheet and picks up the wafer component irradiated by the laser beam; wherein the laser heating unit has a plurality of heating areas for heating the adhesive layer in the wafer attachment area, and the intensity of the laser beam is set to a different intensity for each heating area; and the heating areas are located on the inner side of the outermost periphery of the wafer attachment area.

3. A pickup device for picking up a wafer component attached to a sheet via an adhesive layer, characterized in that: the adhesive layer has the property of reducing the force holding the wafer component in place when heated; and the pickup device comprises: a laser heating unit that irradiates a laser beam heating the adhesive layer onto a wafer attachment area to which the wafer component to be picked up is attached; and a chuck that peels off from the sheet and picks up the wafer component irradiated by the laser beam; wherein the laser heating unit has a plurality of heating areas for heating the adhesive layer in the wafer attachment area, and the intensity of the laser beam is set to a different intensity for each heating area; and the outer edge of the heating area is configured to overlap with a cutting line around the wafer attachment area.

4. The pickup device according to any one of claims 1 to 3 includes an alignment camera that detects the position of the aforementioned wafer component that is the pickup target, and irradiates the aforementioned laser beam onto the aforementioned wafer attachment area on which the wafer component is attached, based on the position information of the aforementioned wafer component captured by the aforementioned alignment camera.

5. The pickup device according to any one of claims 1 to 3, wherein the intensity of the laser beam irradiating the aforementioned heated area is set to be the strongest in the region of the aforementioned wafer attachment area that is inside the outermost periphery and outside the center.

6. The pickup device of claim 4, wherein the intensity of the laser beam irradiating the aforementioned heated area is set to be the strongest in the region of the aforementioned wafer attachment area that is inside the outermost periphery and outside the center.

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