Apparatus, method, computer program, and computer-readable medium storing the computer program for processing an object with remote plasma electrons

Abstract

This invention relates to an apparatus for processing an object (O), the apparatus comprising: an activator (A) for activating a precursor gas and generating a component (C) from the precursor gas (P); a guide (G) for providing the component onto a portion of the object; and a beam unit (BU) for providing a particle beam (B) onto the object. Another aspect of this invention relates to a method for processing an object and a computer program for performing the method.

Description

Technical Field

[0001] The present invention relates to processing objects. More specifically, the present invention relates to processing objects using a particle beam and a component generated from a precursor gas. The present invention includes corresponding apparatus, methods, and computer programs. Prior Art

[0002] In the field of semiconductor technology, various methods and devices for processing objects are known. For example, processing can include removing material from the object in a defined manner.

[0003] Material removal can be achieved by exposing an object to a chemical (e.g., a precursor gas) and additionally exposing the object to particles (e.g., electrons, photons, ions, or a combination thereof). In this instance, the particles can induce a reaction with the chemical, resulting in the removal of material from the object. The chemical reaction induced by these particles can be highly dependent on the characteristics of the chemical (e.g., the precursor gas) used. Therefore, from a technical perspective, the use of specific chemicals (e.g., specific precursor gases) may be necessary to ensure controlled material removal.

[0004] However, a particular chemical substance that may be advantageous for a particular particle-induced reaction may not always have the best properties with respect to technological boundary conditions (e.g., with respect to industrial application and / or control of the particle-induced reaction).

[0005] Therefore, currently known techniques for processing objects are not always optimal. Therefore, there is a need to find ways to improve the processing of objects. Summary of the Invention

[0006] Aspects described herein at least partially address the aforementioned needs.

[0007] A first aspect relates to an apparatus for processing an object. The apparatus may include an activator for activating a precursor gas to produce a component from the precursor gas; a guide for locally providing the component on the object; and a beam unit for providing a particle beam on the object.

[0008] For example, the activator may be configured to activate the precursor gas through chemical and / or physical activation. This may include, for example, inducing a chemical and / or physical reaction in the precursor gas. This may be accomplished by applying energy to the precursor gas via the activator. Components produced from the precursor gas may include products of the chemical and / or physical reactions induced by the precursor gas. The precursor gas may be considered a raw material (e.g., a reactant), wherein the component is a substance that can be produced from the raw material (i.e., the precursor gas) via the activator within the device.

[0009] To illustrate an example, a precursor gas may initially be in a first (chemical and / or physical) state. In the first state, the precursor gas may comprise one or more chemical elements from the periodic table. The one or more chemical elements may serve as building blocks from which components may be generated. For example, in the first state, the one or more chemical elements may be arranged in the form of atoms, molecules, ions, and / or any other type of chemical bonds. By activating the precursor gas, for example, by providing energy to the precursor gas, at least a portion of the precursor gas may be transformed into a second (chemical and / or physical) state. In the second state, the one or more chemical elements may be (at least partially) arranged in a manner different from that in the first state. This different arrangement of chemical elements may comprise a component generated from the precursor gas.

[0010] To illustrate one example of generated species, in the first state, the precursor gas may contain no atoms and / or molecules with unpaired valence electrons. In the second state, atoms and / or molecules with unpaired valence electrons may be present. In this example, atoms and / or molecules with unpaired valence electrons (e.g., free radicals) may be considered generated species. It is worth noting that the concentration of atoms and / or molecules with unpaired valence electrons may be different in the second state compared to the first state. For example, the concentration of atoms and / or molecules with unpaired valence electrons may be increased in the second state compared to the first state. Therefore, activation can also be used to generate more species already present in the first state, for example.

[0011] To illustrate a further example of a generated component, the electronic state and / or electronic configuration of an atom, molecule, ion, and / or any other type of compound can be different in the second state compared to the first state. For example, one or more electrons can be removed from (or added to) an atom, molecule, ion, and / or any other type of compound that was present in the first state.

[0012] To illustrate a further example of generated components, atoms, molecules, ions, and / or any other type of compound may be present in the second state but not in the first state. In this example, new atoms, molecules, ions, and / or new compounds may be considered generated components. It is worth noting that it is also possible that the concentration of atoms, molecules, ions, and / or any other type of compound in the second state may be different compared to the first state. For example, the concentration of atoms, molecules, ions, and / or any other type of compound in the second state may be increased (or decreased) compared to the first state. Thus, activation (as described herein) may also be used to generate more (or less) components already present in the first state. For example, O molecules may be generated at least partially as a component of the O molecules contained in the precursor gas.

[0013] It is worth noting that due to the creation of components, one or more atoms, molecules and / or any other type of chemical bond present in the first state may not be present (or to a lesser extent) in the second state.

[0014] The apparatus can therefore be particularly capable of generating a component from a precursor gas via an activator, wherein the component is (substantially) absent from the precursor gas itself. For example, the generated component may not be present at all in the precursor gas or may be present only in a relatively low (e.g., negligible) concentration, such that a reaction with the object does not (significantly) occur. Thus, according to the present invention, the component does not need to be stored within the apparatus, but can be generated in situ within the apparatus.

[0015] For example, the activator may produce a component that may be beneficial for processing an article, but may not have favorable storage characteristics (e.g., a component that may not be (easily) stored in a stable, safe, and / or reliable manner). Due to the activator, it may be sufficient to store a precursor gas (or a gas that constitutes the precursor gas) that may have more favorable storage characteristics.

[0016] For example, some chemicals (which may be beneficial for particle-induced reactions) may not always have stable and / or ideal storage properties. In such cases, reliable storage of the chemical may not always be ensured, or may require complex storage techniques, intricate safety precautions, and / or extensive maintenance. Often, the significant disadvantages of storing unstable chemicals may be insurmountable in industrial settings. Consequently, known methods may be limited to using stable chemicals for particle-induced reactions. This limitation may be at least partially overcome through the aspects described herein.

[0017] For example, a precursor gas having favorable storage characteristics may include a precursor gas that is chemically stable over a long period of time (e.g., months or years). A precursor gas having favorable storage characteristics may also include a precursor gas having a relatively high vapor pressure.

[0018] In this regard, for example, the device is capable of producing a component that is chemically unstable over an extended period of time (e.g., a component that is unstable for at least 1 hour, 1 day, 1 month, 1 year).

[0019] In another example, the apparatus is capable of generating a species from a precursor gas, wherein the species has a vapor pressure lower than the vapor pressure of the precursor gas.

[0020] To illustrate another example, a precursor gas with undesirable storage properties may include a precursor gas that may have explosive properties. For example, some gases may explode under the influence of impact, friction, and / or vibration. According to the present invention, the apparatus is capable of producing a component from a precursor gas, wherein the component may have such undesirable explosive properties, but the stored precursor gas itself will (substantially) not contain such explosive properties.

[0021] In general, the apparatus is capable of storing a stable precursor gas, wherein highly reactive and / or unstable species may be generated from the precursor gas, which may be beneficial in processing an object.

[0022] Furthermore, the device may be capable of locally providing a component on an object via a guide of the device.

[0023] For example, the guide member may include a conduit, such that the component can be (at least partially) moved from the activator through the conduit. In one example, the activator may be configured to eject the component so that the component is delivered to an input opening of the guide member. The guide member may also include an output opening, wherein the component can be released from the output opening so that the component can be locally provided on the object.

[0024] For example, highly reactive chemicals (which may be beneficial for processing an object) may not be easily controlled. Consequently, known methods may rely on simply providing the chemical throughout the entire object to reduce process control (e.g., simply flooding the entire chamber containing the object with the chemical). However, process control in this example may be limited to the overall control of the chemical. This may limit the potential control of the processed object and / or may require further maintenance (e.g., because the chemical affects the entire object and / or the entire chamber containing the object).

[0025] However, the apparatus according to the present invention may not (necessarily) be configured to provide the generated component in a bulk manner over the entire object. Instead, by using a guide, the component can be locally injected into a portion of the object. Consequently, a localized portion of the object may contain a higher concentration of the component than another localized portion of the object. For example, locally providing the component on the object may induce a concentration gradient of the component across the object, or at least across a portion of the object. This concentration gradient may include concentration gradients that cannot be carefully configured when providing the component in a bulk manner over the entire object (e.g., when the entire surface of the object is exposed to the component).

[0026] The device thus allows for a greater degree of freedom in processing the object, since certain parts of the object can be exposed in a defined manner to a higher concentration of a component than other parts.

[0027] It is worth noting that the apparatus may further include a beam unit for providing a particle beam at the object. The particle beam may include charged and / or uncharged particles and massive and / or massless particles. For example, the particle beam may include an electron beam, an ion beam, a photon beam, and / or a combination thereof. For example, the beam unit provides at least one electron beam that can impinge on the object. It is also conceivable that the beam unit can provide an electron beam and at least one type of ion beam. In another example, the beam unit can provide at least two types of ion beams (wherein the electron beam is not necessarily provided at the object). In one example, the beam unit may be configured to provide the particle beam locally at the object. For example, the beam unit may include a beam focusing element for focusing the particle beam onto the object. However, the particle beam may also be provided locally at the object without (or not necessarily) focusing the particle beam. The beam unit may also include a beam deflecting element for deflecting the particle beam and / or providing it to a desired location on the object. The beam unit may be configured to provide the particle beam within a portion of the object exposed to the component.

[0028] For example, by locally providing a component on an object and also providing particles on the object, the apparatus can thereby induce a particle-induced reaction of the component with a material of the object (e.g., within the same component of the object, e.g., a reaction region of the object). The particle-induced reaction can, for example, induce removal of material from the object (although other types of reactions are also contemplated by the apparatus).

[0029] In this regard, the guide and activator can implement a more efficient particle-induced reaction with the material of the object compared to known methods that rely heavily on providing the chemical substance throughout the entire object.

[0030] That is, to ensure an effective particle-induced reaction, a sufficient concentration (or sufficient pressure) of the component must be present at the reaction zone of the particle-induced reaction. According to the present invention, by locally disposing the component on the object (through the use of a guide), a high concentration of the component can be easily generated at the reaction zone. In other words, the innovative method can require a relatively small total amount of the component to achieve a sufficient concentration in the reaction zone because the entire surface of the object does not need to be exposed to the component.

[0031] In contrast, known methods may rely on flooding the entire object with the chemical to ensure a high concentration of the chemical in every part of the object (e.g., to ensure a high overall pressure of the chemical). However, this may require a relatively large amount of chemical compared to the innovative concept, while also exposing and affecting the entire object with the chemical (which may not always be necessary for processing the object).

[0032] The device according to the present invention is also prone to producing high local concentrations of components in the reaction area, and the components themselves may contain highly reactive components that cannot be stably stored.

[0033] In other words, this function is activated by the guide and the activator. It is important to emphasize that the guide can provide the high concentration required for particle-induced reactions. The activator can provide highly reactive components for the reaction (based on easily storable precursor gases). Therefore, the combination of these two structures can, for example, create a device that can be used to more efficiently perform particle-induced reactions with an object's material.

[0034] The apparatus may include an object support for holding an object. The object may include an object from the semiconductor industry. The apparatus may include one or more object supports for securely holding an object. For example, the object support may include a support for an object used in lithography. The object used in lithography may include a reticle used in a particular type of lithography (e.g., UV lithography, DUV lithography, EUV lithography, high-NA-EUV lithography, nanoimprint lithography, or any other type of lithography). For example, the reticle may include a binary reticle or a phase-shift reticle used in a particular type of lithography. The object used in lithography may also include a reticle blank, which may include a base material for a reticle (as known in the semiconductor industry). For example, the object support may include a reticle chuck.

[0035] Articles in the semiconductor industry may also include semiconductor-based wafers. For example, a wafer may include a semiconductor (e.g., silicon, gallium arsenide, silicon carbide, gallium nitride, etc.). In one embodiment, the wafer may be processed (and thus may include structural features or even functional chips). To this end, the wafer may also include one or more metals that may be part of the structural features. For example, the article support may include a wafer chuck.

[0036] Objects in the semiconductor industry may also include microchips. Microchips may be in an unpackaged state, for example. The present apparatus may be used to process specific portions of a microchip (e.g., specific electronic portions of the microchip). For example, the object support may include a chuck for a microchip and / or an object support for a scanning electron microscope.

[0037] It is worth noting that the object may include any other type of object that induces a particle-induced reaction.

[0038] Subsequently, the device is described in more detail.

[0039] In one example, a guide can be configured to provide a component to a subregion of an object, such that substantially only the subregion is exposed to the component. Thus, the guide can be configured to not only create a concentration gradient of the component across the object, but also to prevent certain portions of the object from being exposed to the component. In one example, portions not exposed to the component (e.g., portions outside the subregion) can be considered non-reactive portions of the object. It is important to note that a portion of the component may also be present in such non-reactive portions. However, the concentration of the component in the non-reactive portion may not be sufficient to induce a particle-induced reaction via the particle beam. To illustrate this example, if the particle beam is provided within the non-reactive portion, no particle-induced reaction will occur. In contrast, if the particle beam is provided within the subregion, the particle beam will induce a particle-induced reaction with the material of the object. Therefore, this subregion can be considered a processing region of the object.

[0040] Adaptation of the guide configuration (as described herein) and / or the flow of components within the guide may enable adjustment of the size of the sub-regions.

[0041] In one example, the diameter of the sub-region may be at most 10 mm. In another example, the diameter of the sub-region may be at most 5 mm. In another example, the diameter of the sub-region may be at most 3 mm. In another example, the diameter of the sub-region may be at most 1 mm.

[0042] In one example, the sub-region shape may be (substantially) circular or elliptical, wherein the diameter of the sub-region may respectively include the diameter defined by the circular or elliptical shape. In one example, the sub-region shape may be (substantially) rectangular or square, wherein the diameter of the sub-region may respectively include the diameter defined by the rectangular or square shape.

[0043] In one example, the sub-region can be adapted to the area of ​​the object. For example, the sub-region can encompass at most 1% of the area of ​​the object. In other examples, the sub-region can encompass at most 2%, at most 10%, at most 20%, at most 30%, at most 40%, at most 50%, or at most 60% of the area of ​​the object.

[0044] In one example, the apparatus may include a first chamber comprising a support for an object, wherein a guide extends at least partially within the first chamber. For example, the guide may extend within the first chamber such that, if the object is placed on the support, the output opening of the guide will be positioned above the object. The support may include a chuck (e.g., an electrostatic chuck or any other type of chuck). The support may further include a positioning platform for positioning the object at a desired location within the first chamber.

[0045] In one embodiment, the guide member may also be positioned within the first chamber. For example, the guide member may be positioned via a corresponding guide member movement unit. The guide member movement unit may be configured to move the guide member so that an output opening of the guide member is positioned above a desired position of the object when the object is placed on the support base.

[0046] The sub-areas exposed to the component can thus be set by the device via the moving object and / or via the moving guide itself.

[0047] In one example, in the processing position of the object, the opening of the guide member that releases the component onto the object can be spaced at most 10 centimeters, at most 1 centimeter, at most 100 μm, or at most 10 μm from the object. The opening that releases the component onto the object is also referred to herein as the output opening of the guide member. According to the present invention, the output opening of the guide member can be brought close to the object. This ensures that the high local concentration of the component (e.g., high local pressure of the component) required for the particle-induced reaction can be reliably generated.

[0048] The processing location of the object may include a location on a support on which the object is placed, wherein the particle-induced reaction may occur at the processing location. Thus, at the processing location, the particle beam and the component may be locally disposed on the object to effectively process the material of the object.

[0049] In one example, the device can adjust the distance between the output opening of the guide and the object by moving the support base and / or the guide.

[0050] In one example, the inner wall of the guide may include a coating that is substantially resistant to a component. As described herein, such a component may include a chemically highly reactive component. Therefore, if technical precautions are not taken, such a component may induce significant wear, erosion, and / or abrasion within the guide. Therefore, the coating on the inner wall of the guide may be tailored to one or more highly reactive components generated by the precursor gas, thereby reducing or eliminating the reaction of such components with the inner wall of the guide. As a result of these effects, the coating can reduce maintenance (e.g., cleaning the guide) and / or replacement requirements while ensuring that the highly reactive component can be locally provided on the object for effective particle-induced reactions. Consequently, the coating can achieve more reliable device functionality within an industrial environment.

[0051] In one example, the coating may include at least one of the following materials, or a combination thereof: polytetrafluoroethylene, steel, plastic, or a dielectric material. The steel used in the coating may, for example, include stainless steel and / or corrosion-resistant steel. The plastic used in the coating may, for example, include FKM (a fluorocarbon-based fluoroelastomer), PTFE (polytetrafluoroethylene), or PFA (perfluoroalkoxy resin).

[0052] In one example, the coating can be configured (and / or comprise one or more materials) such that the component is not deactivated and / or neutralized by the coating. For example, the coating can be configured such that the component is not deactivated and / or neutralized when the component comes into contact with the coating.

[0053] In one example, different sections of the guide may include different coating materials. For example, a first section of the guide may include a first coating material, and a second section of the guide may include a second coating material different from the first coating material.

[0054] In one example, a guide can include different sections, wherein the different sections can have different guide diameters (e.g., catheter inner or outer diameters). For example, a guide can include a first section having a first diameter (e.g., a first inner catheter diameter or an outer catheter diameter) and a second section having a second diameter (e.g., a second inner catheter diameter or an outer catheter diameter), wherein the second diameter can be different from the first diameter.

[0055] For example, the guide member may have a guide diameter ranging from 0.5 mm to 30 cm. For example, one or more sections of the guide member may have a guide diameter ranging from millimeters (e.g., a guide diameter ranging from 0.5 mm to 10 mm). For example, one or more sections of the guide member may have a guide diameter ranging from centimeters (e.g., a guide diameter ranging from 1 cm to 30 cm).

[0056] In one example, the guide diameter can be at least 0.5 mm, at least 5 mm, at least 1 cm, at least 5 cm, at least 10 cm, at least 15 cm, at least 20 cm, and / or at least 25 cm.

[0057] In one example, the guide diameter can be at most 30 cm, at most 25 cm, at most 20 cm, at most 15 cm, at most 10 cm, at most 5 cm, at most 1 cm, at most 5 mm, or at most 0.6 mm.

[0058] In one example, the length of the guide member can be at most 10 centimeters. In another example, the length of the guide member can be at most 50 centimeters, at most 1 meter, at most 2 meters, at most 3 meters, at most 4 meters, or at most 5 meters.

[0059] In one example, the wall thickness of the guide (which also includes the coating) can be between 0.1 mm and 30 cm.

[0060] In one example, the guide member may include different sections, wherein the wall thickness of the different sections may be different. For example, a first section of the guide member may include a first wall thickness, and a second section of the guide member may include a second wall thickness different from the first wall thickness.

[0061] In one example, the activator can be separated from the object so that the object is not subjected to the activation reaction of the precursor gas. For example, the activator can be positioned separately from the object (or object support) so that the chemical and / or physical reaction of the precursor gas induced by the activator does not affect the object itself. For example, the activator can be spaced apart from the object so that the entire activated precursor gas does not interact with the object. According to the present invention, a group of one or more components present in the activated precursor gas can be directed from the activated precursor gas to a guide member so that only the group of one or more components comes into (partial) contact with the object.

[0062] It is important to note that suspending the entire object to allow for reactions to generate species from the precursor gas may not be desirable. For example, the activated precursor gas may contain other species that may not be beneficial for particle-induced reactions. Furthermore, even (local) particle-induced reactions may not be possible when the object is fully suspended to activate the precursor gas (e.g., because this may induce uncontrolled scattering of the particle beam, making it impossible to induce local reactions through the particle beam).

[0063] In one example, the apparatus may include a second chamber containing an activator, wherein the second chamber and the first chamber are coupled at least partially via a guide, allowing components to be transferred from the second chamber to the first chamber. In this example, the apparatus may therefore include at least two chambers: a first chamber containing a support for an object (and thus, for example, containing the object) and a second chamber containing the activator. Thus, the chamber in which the precursor gas is activated can be different from the chamber in which the actual processing of the resulting set of objects occurs. Thus, the second chamber can serve as an activation chamber for chemically and / or physically activating the precursor gas. In this example, the objects that may be present in the first chamber will not themselves be affected by the chemical and / or physical reactions caused by the activated precursor gas. The guide can serve as a coupling element between the spatially separated first and second chambers to guide components produced in the second chamber to the objects present in the first chamber.

[0064] In one example, the activator may include a plasma cell to form a plasma for activating the precursor gas. For example, the plasma cell may be configured to form a plasma of the precursor gas. For example, the plasma cell may be configured to receive the precursor gas and ignite the precursor gas plasma. The precursor gas plasma may correspond to an activated precursor gas (as described herein). Notably, the precursor gas plasma may (particularly) correspond to a second chemical state of the precursor gas (as described herein). When the precursor gas is converted into a plasma, the chemical elements of the precursor gas do not change. However, various highly reactive species or new compounds may be present in the precursor gas plasma that are not present in the (original, unactivated) precursor gas itself.

[0065] The plasma cell may include any plasma-forming unit that excites a precursor gas (e.g., via high-energy excitation) to generate a plasma of the precursor gas. For example, the plasma cell may include one or more electrodes for applying an electric field extending within the precursor gas to form a plasma of the precursor gas (as is known in the art).

[0066] It is worth noting that the plasma cell can be configured to receive a precursor gas, which can contain atoms and / or molecules that are conducive to igniting the plasma. For example, the precursor gas can contain (especially) argon gas, wherein the plasma cell can be configured to excite argon atoms to generate plasma of the precursor gas.

[0067] In one example, the component may include a component of the plasma. For example, the component generated from the precursor gas may include radicals, atoms, and / or molecules of the plasma.

[0068] In one example, the activator may include a radiation unit that irradiates the precursor gas with electromagnetic radiation to ionize the precursor gas and thereby activate the precursor gas. It is worth noting that the radiation unit may be configured to ionize one or more atoms or molecules of the precursor gas. In this example, the plasma of the precursor gas may not (necessarily) be formed by the radiation unit. The radiation unit may, for example, include an ultraviolet irradiator, wherein the electromagnetic radiation may include ultraviolet radiation generated by the ultraviolet irradiator. The radiation unit may, for example, include a microwave irradiator, wherein the electromagnetic radiation may include microwave radiation generated by the microwave irradiator. It is worth noting that the radiation unit may include any type of irradiator that generates electromagnetic radiation capable of ionizing one or more atoms or molecules of the precursor gas.

[0069] In one example, the component may include a component of an ionized precursor gas. For example, the component generated from the precursor gas may include radicals, atoms, and / or molecules of the ionized precursor gas.

[0070] In one example, the component may include a radical and / or compound that is substantially absent from the precursor gas. For example, the activator may generate (e.g., via an ionization unit and / or radiation unit) atoms, ions, and / or molecules that are not present in the precursor gas.

[0071] In one example, the apparatus may include a filter for filtering a specific component among a plurality of components generated from the precursor gas, such that the specific component is locally provided on the object.

[0072] In one example, the net charge of the component can be substantially neutral (or substantially zero).

[0073] In one example, the net charge of a component can be substantially positive or negative.

[0074] To this end, the filter can be configured to filter specific components based on the net charge of the components.

[0075] In one example, the filter may include an ion filter and / or a neutralization plate. The ion filter may include any type of ion filter that can extract only one or more specific charged components at the filter output. The device may be configured such that the filter output and / or the neutralization plate output can be coupled to a guide member so that the filtered components are locally provided on the object.

[0076] For example, an ion filter may include a field unit for generating an electric and / or magnetic field. The field unit may be positioned within the device such that components of the activated precursor gas are subjected to the electric and / or magnetic fields. Depending on the adjustment of the electric and / or magnetic fields, only one or more specifically charged components may be directed to the filter output of the field unit. For example, the field unit may be configured to deflect components with a non-zero net charge from the filter output, wherein components with a neutral net charge may be moved to the filter output without being affected by the electric and / or magnetic fields of the field unit. However, the field unit may also be configured such that charged components are drawn out at the filter output (and thus provided locally on the object).

[0077] The ion filter may further comprise a filter that absorbs a specific type of charged component such that unabsorbed components may be present at the filter output.

[0078] For example, the neutralization plate may comprise a conductive plate that can be electrically grounded (e.g., set to zero volts). Thus, only neutral components can diffuse through the neutralization plate. Components with a non-zero net charge are absorbed by the neutralization plate and thus filtered out. Therefore, the neutralization plate can also be considered and / or used as an ion filter.

[0079] In one example, the device can be configured to set the guide to a predetermined potential to filter specific components. In this example, the guide itself can function as an ion filter (similar to the description of the neutralization plate). For example, the guide can be electrically grounded (e.g., where the predetermined potential is set to zero volts). In this example, only electrically neutral components can be guided through the guide unaffected. However, components with positive or negative charges can be conducted toward the guide due to their potential and thus be absorbed by the guide.

[0080] In a preferred embodiment, the device can be configured so that only electrically neutral components can be directed onto the object. In this embodiment, the filter mechanism described herein or a combination thereof can therefore be configured to filter out charged components.

[0081] In one example, the activator can be configured to eject components in the beam toward a guide. For example, the activator can include an orifice and / or nozzle, allowing components of the activated precursor gas to be ejected from the activator through the orifice and / or nozzle. The orifice can be a simple opening within the activator. The diameter of the orifice can be adjustable (e.g., to adjust the flow rate of the ejected component). It is also contemplated that the nozzle can be adjustable (e.g., to adjust the flow rate and / or velocity of the ejected component). It is also contemplated that the activator can include an ejection unit, wherein the ejection unit can include an ejection system, and the ejection system can include one or more orifices and / or nozzles.

[0082] As described herein, the apparatus may include a second chamber containing an activator. The second chamber may, for example, include a vacuum chamber. In this example, the activator may be configured to eject components of the light beam into a portion of the second chamber, such that particles of the light beam can pass through the vacuum of the second chamber and enter the guide. For example, the activator may include a plasma cell (as described herein). In this example, the plasma cell may include an aperture and / or a nozzle, such that components of the plasma can be ejected from the aperture and / or nozzle into the vacuum of the second chamber.

[0083] It is worth noting that the components emitted from the activator in the form of a beam can contain a relatively wide angular distribution.

[0084] In one embodiment, the device may include a beam shaper to shape the beam of components emitted from the activator. The beam shaper may, for example, include a collimating component for collimating the emitted beam. The beam shaper may, for example, include a funnel-shaped splitter. The shape of the splitter may be, for example, a known molecular beam splitter. The splitter can reduce the angular distribution of the beam emitted from the activator. Thus, the splitter can collimate the emitted beam.

[0085] In one example, the beam shaper can be positioned so that the shaped beam can be substantially collimated to the input opening of the guide. In this regard, the beam diameter can, for example, be completely within the input opening of the guide.

[0086] In one example, the apparatus may include at least one reactive gas container for providing a precursor gas, wherein the at least one reactive gas container is configured to store at least one of the following: a reactive gas containing a halide, a reactive gas containing oxygen, or a reactive gas containing hydrogen. It is noted that the precursor gas may include a reactive gas from the reactive gas container. To this end, the apparatus may, for example, include a gas pipeline system to supply the reactive gas from the at least one reactive gas container to the activator.

[0087] The reaction gas container can be adapted, for example, to reliably store a halide-containing reaction gas. For example, the reaction gas container can include an inner coating that prevents the halide-containing gas from (substantially) interacting with the (internal) material of the reaction gas container. The halide-containing gas can include at least one halogen atom. For example, the halide-containing gas can include at least one of the following: XeF2, CF4, CCl4, Cl2, HCl, HF, I2, HI, Br2, HBr, NOCl, NOF, ClNO2, FNO2, PCl3, PCl5, PF3, or SF6.

[0088] The reaction gas container can be adapted, for example, to reliably store a reaction gas containing oxygen. For example, the reaction gas container can include an inner coating that prevents the oxygen-containing gas from (substantially) interacting with the (internal) material of the reaction gas container. The oxygen-containing gas can include at least one oxygen atom. For example, the oxygen-containing gas can include at least one of the following: O2, H2O, H2O2, N2O, NO, NO2, or HNO3.

[0089] The reaction gas container, for example, can be adapted to reliably store a hydrogen-containing reaction gas. For example, the reaction gas container can include an inner coating that prevents the hydrogen-containing gas from (substantially) interacting with the (internal) material of the reaction gas container. The hydrogen-containing gas can include at least one hydrogen atom. For example, the hydrogen-containing gas can include at least one of the following: H 2 , NH 3 , or CH 4 .

[0090] In one example, the apparatus may include two or more reactant gas containers for providing precursor gases, wherein the apparatus is configured to apply a predetermined combination of two or more reactant gases as the precursor gas. For example, the apparatus may include a gas line system that provides a predetermined ratio of reactant gases as the precursor gas (e.g., within an activator). For example, the apparatus may be configured to provide a first reactant gas and a second reactant gas as the precursor gas, wherein the predetermined ratio of the first reactant gas to the second reactant gas may be X:Y. The ratio may include a ratio of volume, mass, or number of molecules (and / or atoms) of the reactant gases. In another example, the apparatus may be configured to provide a first reactant gas, a second reactant gas, and a third reactant gas, wherein the predetermined ratio is X:Y:Z (e.g., a mass ratio of 5:4:1, 3:2:1, or any other suitable ratio). It is worth noting that the apparatus may also provide more than four reactant gases to form a precursor gas.

[0091] With this configuration, different types of precursor gases can be supplied as raw materials, allowing multiple components (e.g., multiple free radicals and / or compounds) to be generated from the precursor gases. Thus, the apparatus according to the present invention can generate multiple possible reactions within the activator.

[0092] For example, the apparatus may be configured to generate at least one of the following free radicals based on relative precursor gases: fluorine free radicals, chlorine free radicals, oxygen free radicals, nitrogen free radicals.

[0093] For example, the apparatus may be configured to generate at least one of the following compounds based on relative precursor gases: F2, O3, OF, O2F2, O2F, OF2, O4F2, O3F2, ClO2, ClO, Cl2O. In a further example, the apparatus may be configured to generate halide oxides and / or radicals of the compounds (e.g., halide oxides and / or radicals of at least one of the following compounds: F2, O3, OF, O2F2, O2F, OF2, O4F2, O3F2, ClO2, ClO, Cl2O).

[0094] For example, the apparatus may be configured to produce an interhalogen compound (eg, ClF, ClF 3 , ClF 5 and / or another interhalogen compound).

[0095] In one example, the beam unit can be configured to locally focus the particle beam onto the object during processing. This can, for example, enable raster scanning of the object using the particle beam. Raster scanning can involve scanning a working area of ​​the object composed of various predetermined pixel components. The working area can include a portion of the sub-area exposed to the component. For raster scanning, the focused particle beam can be directed to each pixel. However, if the pixel should not be exposed to the particles, the beam unit can (temporarily) turn off the particle beam (this can also be called blanking). If the pixel should be exposed to the particles, the beam unit can (temporarily) turn on the particle beam. In another example, the device can also be configured to perform vector scanning (as is known in the art) using the particle beam.

[0096] In one example, the beam unit can be configured such that the particle beam's focal region on the object can include a region with a diameter of at most 10 μm, at most 1 μm, at most 500 nm, or at most 500 nm. In one example, the diameter of the focal region implementable using the beam unit can include at least 0.5 nm.

[0097] In one example, the beam unit can be configured to focus the particle beam to a resolution of less than 10 μm, less than 1 μm, less than 500 nm, less than 100 nm, less than 10 nm, and / or less than 1 nm. In one example, the resolution achievable using the beam unit can be at least 0.5 nm.

[0098] In one example, a beam unit can be configured to provide a particle beam within a specific subregion of an object. For example, the particle beam can be provided at one or more locations within a specific localized area without requiring spatial repositioning or adjustment of the object. For example, the specific subregion of the object can encompass the field of view of the beam unit. The particle beam can be positioned within the field of view of the object, for example, based on control of the beam unit. For example, the particle beam can be deflected and / or focused within the field of view without requiring spatial adjustment of the object.

[0099] A specific subregion (e.g., field of view) of a beam unit can be defined by a rectangular region (however, other shapes of specific subregions are also contemplated). For example, the field of view can include a lateral extent (e.g., the lateral extent of one side of the rectangular region of the field of view). The lateral extent of one side of the field of view can, for example, include at most 20 μm, at most 10 μm, at most 8 μm, at most 7 μm, at most 5 μm, at most 4 μm, or at most 3 μm.

[0100] In one example, a specific local area (e.g., field of view) provided by a beam unit may include an area defined by the following (exemplary) dimensions: 20µm x 20µm, 10µm x 10µm, 8µm x 8µm, 7µm x 7µm, 5µm x 5µm, 4µm x 4µm, 3µm x 3µm, and / or 2µm x 2µm. For example, the field of view may be substantially rectangular (e.g., square) with dimensions of 8μm x 8μm.

[0101] In one example, the apparatus can be configured to remove material from the object based at least in part on the component and the particle beam locally provided on the object. For example, the apparatus can be configured to perform particle-induced etching on the material of the object using the provided component. To this end, the apparatus can be configured to continuously provide the component to a reaction region of the object while the beam unit scans various locations (e.g., pixels) within the reaction region to induce an etching reaction near the impacting (e.g., focused) particle beam.

[0102] For example, the apparatus may be configured to perform (focused) electron beam induced etching (e.g., referred to as (F)EBIE) of an object via the component. In this example, the beam unit may be configured to provide an electron beam as the particle beam.

[0103] For example, the device can be configured to perform (focused) ion beam-induced etching and / or milling of an object via the component. In this example, the beam unit can be configured to provide an ion beam as the particle beam.

[0104] For example, the apparatus may be configured to perform electron and ion beam induced etching / milling of an object through the component. In this example, the beam unit may be configured to provide an electron beam and an ion beam.

[0105] In some embodiments, devices that do not include a beam unit are also conceivable. For example, an object can be processed by locally providing a component on the object.

[0106] In one embodiment, the device may include a control unit for controlling the various components and / or units of the device (described herein). The control unit may, for example, be configured to control at least one of the following: an activator, a beam unit, a guide, an object support, or one or more gas line systems of the device. The control unit may, for example, include a computer and / or a computing unit capable of performing data processing and / or sending control signals to the various components and / or units of the device.

[0107] In one embodiment, the apparatus can be configured to repair an object by removing material from the object. For example, the apparatus can be configured to repair a photomask used in lithography.

[0108] A second aspect relates to another apparatus for processing an object. The apparatus may include an activator for activating a precursor gas to generate a component from the precursor gas and a beam unit for locally providing a focused particle beam on the object. It should be noted that all aspects described herein for the apparatus according to the first aspect also apply to the apparatus according to the second aspect.

[0109] However, the device according to the second aspect may not (necessarily) include the guide member described herein with respect to the first aspect. For example, the device according to the second aspect can be used to comprehensively introduce a component onto the entire object. For example, the activator can be positioned adjacent to a first chamber containing an object support. The device can include an orifice, nozzle, and / or injection system located between the activator and the first chamber to comprehensively introduce the component onto the object.

[0110] However, the apparatus according to the second aspect can be configured to provide a focused particle beam (as described herein), enabling (nevertheless) highly localized processing of an object. For some applications, it may not be necessary to provide the generated components in a localized manner. However, for some applications, it may be necessary to confine the particle-induced reaction to a narrow spatial working area that the particle beam needs to scan. For example, the size of the working area may be less than 10 μm, less than 1 μm, less than 500 nm, and / or less than 100 nm, and / or less than 60 nm. In order to reliably process portions of such a narrow working area (e.g., pixels), a focused particle beam can be provided by a beam unit. To this end, the beam unit may include a corresponding focusing unit to focus the particle beam to the focal area and / or resolution described herein. The (narrow) working area may, for example, include structures and / or defects of the object to be processed (e.g., structures of a mask, wafer, and / or microchip).

[0111] A third aspect relates to a method for processing an object. The method may include activating a precursor gas to generate a component from the precursor gas; providing the component locally on the object; and providing a particle beam on the object.

[0112] In one example, the component may be disposed on a subregion of the object such that substantially only the subregion is exposed to the component, wherein the particle beam is disposed within the subregion.

[0113] In one example, the method may be performed using a device according to the first aspect (and / or the second aspect).

[0114] In one example, the method can include removing material from an object based at least in part on a component and a particle beam.

[0115] In one example, activation of the precursor gas may include forming a plasma of the precursor gas.

[0116] In one example, activation of the precursor gas may include ionizing the precursor gas.

[0117] In one example, the method may further include providing a predetermined combination of two or more reaction gases as the precursor gas to generate a predetermined composition based thereon.

[0118] In one example, the method may include filtering out a specific component from a plurality of components generated from a precursor gas, such that the specific component is locally provided on the object.

[0119] In one example, the method may include locally and continuously providing a component and a particle beam to an object. Thus, the component and particle beam may be provided to the object in a single process step. During this continuous process, the particle beam may be (briefly) blocked, while the component may still be continuously provided to the object (e.g., continuously emitted onto a subregion). This avoids separate processes where only a subregion of the object is first exposed to the component and then processed only with the particle beam (without providing the component). Such separate processes can result in extended processing times, as the effect of the component on the object may not persist until the particle beam is directed onto the subregion. Consequently, the particle-induced reaction may not be induced at all or may be induced at a relatively low efficiency (e.g., a lower etching rate and / or only a single etching step is possible). The continuous method of the present invention is not limited to etching one or more atomic layers of an object. Rather, the continuous provision of the particle beam to the component makes continuous etching possible, thereby enabling various etching depths to be achieved within a single process step.

[0120] In one example, the method may include varying at least one particle beam parameter during the process. For example, the method may include varying the focus of the particle beam. In another example, the method may include varying the beam current and / or acceleration of particles in the particle beam.

[0121] In one embodiment, the method can be used to repair an object. For example, a defect in an object can be repaired by removing material from the object.

[0122] A fourth aspect relates to a method for processing an object. The method may include activating a precursor gas to generate a component from the precursor gas; providing the component on the object; and focusing a particle beam on the object. For example, the method may include providing the component globally over the entire object. Additionally or alternatively, the method may further include locally providing the component on the object (as described herein).

[0123] In some examples, the method of the third and / or fourth aspect may be implemented as a method for processing a lithographic object, a method for processing a semiconductor-based wafer, and / or a method for processing a microchip.

[0124] A fifth aspect relates to a computer program that may include a plurality of instructions that, when executed, implement the method of the third aspect (and / or any other aspect described herein).

[0125] In one example, the computer program, when executed by a computer and / or device according to the first aspect (and / or any other aspect described herein), can cause the computer and / or device to perform a method according to any of the aspects described herein.

[0126] Another aspect relates to a (non-transitory storage) medium containing the computer program described herein.

[0127] The devices described herein can be configured to implement the methods and / or computer programs described herein. For example, a device according to the present invention can be configured to receive instructions from an executed computer program, wherein these instructions cause the corresponding device to perform the corresponding method. For example, the corresponding device can include a storage medium containing the computer program, wherein the device can execute the computer program (e.g., via its control unit). However, the computer program can also be stored externally (e.g., on a server, in the cloud, etc.), wherein the corresponding device can include a receiver unit for receiving instructions from the externally executed computer program to perform the corresponding method.

[0128] It should be noted that the method steps (or computer program steps) described herein may include all aspects described herein, even if not explicitly described as method steps but with reference to an apparatus (or device or system). Furthermore, the apparatus (or system or device) outlined herein may include means for implementing all aspects outlined herein, even if these aspects may be described in the context of method steps (or computer program steps).

[0129] Whether described as method steps, computer programs, and / or components, the functions described herein can be implemented using hardware, software, firmware, and / or a combination thereof. If implemented using software / firmware, the functions may be stored on or transmitted as one or more instructions or program code on a computer-readable medium. Computer-readable media include computer storage media and communication media, including any media that facilitates the transfer of a computer program from one location to another. Storage media is any available medium that can be accessed by a general-purpose or special-purpose computer. By way of example and not limitation, such computer-readable storage media may include RAM, ROM, EEPROM, FPGA, CD / DVD or other optical disk storage, magnetic disk storage or other magnetic storage devices, solid-state drives, or any other medium that can be used to carry or store the required program code, represented in the form of instructions or data structures, and accessible by a general-purpose or special-purpose computer, or a general-purpose or special-purpose processor. The control unit described herein can also be implemented using hardware, software, firmware, and / or a combination thereof, for example, by one or more general-purpose or special-purpose computers, and / or one or more general-purpose or special-purpose processors.

[0130] A fifth aspect relates to an article, wherein the article has been processed using a method as described herein (e.g., according to the third and / or fourth aspects). The article may include an article used for lithography (e.g., a mask and / or a mask blank), a (e.g., semiconductor-based) wafer, and / or a microchip (as described herein).

[0131] A sixth aspect relates to a method for lithographic processing of a wafer (e.g., semiconductor-based), comprising lithographically transferring a pattern associated with an object for lithography onto the wafer, wherein the object for lithography has been processed using the methods described herein (e.g., methods according to the third and / or fourth aspects). The lithographic transfer may include the lithographic method for which the lithographic object is designed (e.g., EUV lithography, DUV lithography, i-line lithography, etc.). For example, the method includes providing a radiation source capable of emitting electromagnetic radiation (e.g., EUV radiation, DUV radiation, i-line radiation, etc.). The method may further include providing an anti-resist layer (e.g., comprising a photoactive anti-resist) on the wafer. The lithographic transfer may be based at least in part on irradiation from the radiation source and providing the anti-resist layer. For example, the object for lithography may be irradiated by the radiation source so that the pattern of the object can be imaged onto the anti-resist layer. Simple diagram description

[0132] FIG1 shows an exemplary schematic diagram of a device according to the present invention. FIG. 2 shows a first example of a part of a device according to the invention comprising an activator. FIG3 shows a second example of a part of a device according to the invention containing an activator. FIG4 shows a third example of a portion of a device according to the present invention containing an activator. FIG5 shows an example of a part of a device according to the invention comprising a guide, an object and a beam unit. Implementation Method

[0133] FIG1 illustrates an exemplary schematic diagram of an apparatus 100 according to the present invention. As described herein, apparatus 100 can be used to process an object O. Object O can include a reticle or reticle blank for lithography (as described herein). Object O can also include a wafer and / or microchip (as described herein).

[0134] A brief overview of the device is first presented.

[0135] The apparatus 100 may include a first chamber K1, in which an object O may be placed for particle-induced processing. To this end, a particle beam B may be provided to the object O in the first chamber. The apparatus 100 may further include a second chamber K2. The second chamber may include an activator A for activating a precursor gas to generate components from the precursor gas. The first chamber K1 and the second chamber K2 may be coupled via a guide G, allowing materials to be transferred from the second chamber to the first chamber via the guide G. For example, components generated from the precursor gas may be transferred from the second chamber K2 to the first chamber K1 for particle-induced processing of the object O.

[0136] Subsequently, the exemplary apparatus 100 is described in more detail in view of an exemplary processing sequence according to the present invention.

[0137] The apparatus may include one or more reaction gas containers, each containing a relative number of reaction gases. The apparatus of FIG1 shows three exemplary reaction gas containers 101, 102, and 103. The first reaction gas container 101 may store a first reaction gas. The second reaction gas container 102 may store a second reaction gas. The third reaction gas container 103 may store a third reaction gas. For example, the first reaction gas may include a plasma-inducing gas (e.g., a gas containing argon). For example, the second reaction gas may include a gas containing a halide. For example, the third reaction gas may include a gas containing oxygen. The apparatus may further include a fourth reaction gas container (not shown), wherein the fourth reaction gas stored in the fourth reaction gas container may include hydrogen. It is worth noting that the reaction gas may also include a halide and oxygen, or a halide and hydrogen, or oxygen and hydrogen, or a halide, oxygen, and hydrogen. In some examples, only one, two, or three gas containers may be provided, although providing four or more gas containers is also contemplated.

[0138] Each reactant gas container can be coupled to a corresponding valve. In Figure 1, the first reactant gas container 101 can be coupled to a first valve 1101. The second reactant gas container can be coupled to a second valve 1102. The third reactant gas container can be coupled to a third valve 1103. The first, second, and third valves can be coupled to an activation valve 1104. Activation valve 1104 can be coupled to the activator (e.g., to the inner chamber of activator A). The valves can control the flow of reactant gas into the activator in a defined manner. The valves controlling the flow of reactant gas to the activator can be considered part of the gas pipeline system of apparatus 100 and can be controlled by a control unit of apparatus 100.

[0139] For example, a valve can control which reactant gas can flow into activator A. The reactant gas released into the activator can form the precursor gas described herein. In one example, a first reactant gas, a second reactant gas, and a third reactant gas can be released into activator A. Thus, the precursor gas in this example is formed by the first, second, and third reactant gases.

[0140] It is worth noting that the release of two or more reactant gases into activator A can be controlled via valves, such that a predetermined ratio of reactant gases is present in activator A. For example, a first reactant gas, a second reactant gas, and a third reactant gas can be delivered to the activator via valves, such that they are present in activator A in a predetermined ratio. For example, the ratio of the first reactant gas to the second reactant gas to the third reactant gas can be in the form of X:Y:Z, where any ratio can be implemented by the apparatus. For example, the ratio of the first reactant gas to the second reactant gas to the third reactant gas can be 5:4:1 (or any other suitable ratio, which can be based on experimental analysis of the processes described herein).

[0141] In summary, the apparatus 100 can control the reaction gas container and the valve so that a predetermined gas mixture can exist as the precursor gas in the activator A.

[0142] In one example, the apparatus can be configured to process an article using a component generated from a precursor gas and / or using the precursor gas itself.

[0143] For example, the apparatus may be configured such that the precursor gas can be locally supplied to the object via the guide G and / or a similar but independent guide (not shown). For example, the precursor gas can be supplied to the chamber K1 without passing through the activator A (not shown). In another example, the precursor gas can be supplied to the chamber K1 via the activator, wherein the activator is not activated, so that the precursor gas is not activated, and the precursor gas is then locally supplied to the object (not shown).

[0144] All aspects of processing an object using the component described herein may also be applied to processing an object using the precursor gas itself, for example.

[0145] For example, the properties and / or features described herein for guides for locally providing a component on an object may also be applied to guides for locally providing a precursor gas on an object.

[0146] For example, a guide for locally providing a component on an object can serve as a guide for locally providing a precursor gas on an object.

[0147] However, the guide for locally providing a precursor gas on an object can also be, for example, separate from the guide for locally providing a component on an object. It is worth noting that, in this example, the features of the guide for locally providing a component on an object described herein can (at least partially) be the features of the guide for locally providing a precursor gas on an object.

[0148] Activator A may include a plasma cell. The plasma cell may be configured to ignite a plasma of a precursor gas. The plasma cell may be of any configuration capable of igniting a plasma of a gas mixture. For example, the plasma cell may include two electrodes within its internal chamber. The precursor gas received by activator A may be present between the two electrodes. An electric field (having a certain power and frequency) may be applied between the two electrodes to excite the precursor gas, thereby igniting a plasma of the precursor gas. The plasma cell may include a magnetic field generator to suspend the plasma within a magnetic field to further condition the plasma. The plasma cell may be configured to suppress or eliminate plasma melting.

[0149] The plasma-inducing gas (e.g., argon) present in the precursor gas may help induce plasma in the precursor gas. For this excitation, the electric field frequency may be 13.56 MHz. The frequency may also range from 40 kHz to 100 kHz. The frequency may also be 2.45 GHz. The plasma excitation power may range from 100 W to 1600 W. The pressure used to generate the plasma may, for example, be within the range of atmospheric pressure and up to 1 x 10-4 mbar.

[0150] The ignited plasma of the precursor gas can generate components not present in the (initial) precursor gas itself. For example, the components of the plasma can include (highly) reactive species and / or new compounds not present in the (unactivated) precursor gas (or reactive gas container). For example, the plasma can generate free radicals, which can be highly reactive with the material of the object O. For example, the generated free radicals can be neutrally charged. However, the plasma can also generate charged free radicals (e.g., positively or negatively charged free radicals). The generated free radicals can be locally provided to the object via a device for inducing a reaction with particles that bind to the free radicals (as described herein).

[0151] As described herein, the plasma may also generate specific new compounds as components, which may be based on the reactant gases provided to form the precursor gases.

[0152] However, not every component of the plasma may be used for the particle-induced reaction on the object O. To this end, the apparatus may be configured to filter out specific components from the components generated by the plasma.

[0153] For example, the second chamber K2 may include a plasma cell. The second chamber K2 may include a vacuum chamber, wherein the plasma cell is disposed within the vacuum chamber (or wherein at least a portion of the plasma cell is present within the vacuum chamber). The plasma cell may include an aperture and / or nozzle for ejecting one or more components of the plasma from the plasma cell into the vacuum chamber of the second chamber K2. The plasma cell may also include an ejection system, which may include one or more apertures and / or nozzles for ejecting one or more components into the vacuum chamber.

[0154] Thus, the species ejected from the plasma cell can travel freely within the vacuum chamber. The ejected species can, for example, form a beam with a wide angular distribution (e.g., depending on the aperture size or nozzle characteristics). The input opening of the guide G can be positioned within the path of the generated species so that the species can reach the input opening.

[0155] The second chamber K2 may further include a filter F positioned therein to filter out certain components. The filter F may be positioned between the plasma cell and the input opening of the guide G. The filter F may include an ion filter and / or a neutralization plate. The filter F may allow only specifically charged components to couple to the guide G. For example, the ion filter may be configured to apply an electric field and / or a magnetic field to deflect one or more specifically charged components, thereby coupling only desired components into the guide. For example, the ion filter may deflect positively and negatively charged components away from the input opening of the guide G, thereby allowing (substantially) only neutral components to couple to the guide G.

[0156] The filter F may further comprise a neutralization plate that can be electrically grounded, so that charged components can be absorbed by the neutralization plate, as described herein, wherein neutral components can diffuse through the neutralization plate into the guide G.

[0157] The guide member G may include a pilot valve 1105. The pilot valve 1105 may be used to control the flow of the component produced within the guide member G. Thus, the pilot valve 1105 may be used to control the flow of the component into the first chamber K1, and thus control the flow of the produced component to the object O.

[0158] 1 shows that the guide G extends within the first chamber K1. The guide G extends so that its output opening is located in the vicinity of the object O. Thus, the produced components can be provided locally on the object.

[0159] Furthermore, FIG1 schematically illustrates a particle beam B within a first chamber K1. It is noted that a focused particle beam is schematically depicted. Particle beam B can be provided locally within a region of an object where a generated component (as described herein) is provided. Particle beam B can include an electron beam. Apparatus 100 can, for example, be configured to induce (focused) electron beam-induced etching using the provided generated component. Particle beam B can also include an ion beam. Apparatus 100 can, for example, be configured to induce (focused) ion beam-induced etching using the provided generated component. The apparatus can also be configured to provide two or more particle beams (e.g., a dual-beam configuration), wherein, for example, an electron beam and an ion beam can be provided within first chamber K1.

[0160] As described herein, utilizing particle-induced reactions of generated species may be more efficient than utilizing particle-induced reactions of only the precursor gas itself.

[0161] That is, the radicals or specific compounds generated by the precursor gas may be more reactive toward the surface of the object O. For example, the generated species may have a higher chemical adsorption probability on the object than the precursor gas itself. Therefore, the residence time of the generated species on the object may be relatively longer than the residence time of the precursor gas on the object. Consequently, the concentration of the generated species on the object may be locally longer and / or more reliably provided, which may result in more efficient particle-induced reactions (e.g., faster and / or improved etching of high-resistance materials).

[0162] Previous methods may rely on localized particle-induced etching using a simple etching gas provided to the substrate, where the etching gas contains relatively unreactive species. For example, the etching gas of common methods may not contain free radicals (or may contain only natural free radicals, such as NO or NO₂). In such methods, the first interaction with the substrate primarily involves physical adsorption. Therefore, etching gas components may accumulate on the substrate through relatively weak binding. Consequently, physically adsorbed molecules of the etching gas may (easily) spontaneously desorb from the substrate surface, which may reduce the efficiency of the particle-induced reaction (due to less available reactive material). Spontaneous chemical adsorption may also occur (at least partially). Chemical adsorption can result in a stronger binding of etching gas components to the substrate. However, the extent of spontaneous chemical adsorption in common methods may be relatively low (e.g., due to the non-reactive etching gas, physical adsorption may dominate regardless). It is important to note that the actual activation of the etching gas by the particle beam may occur after the etching gas is provided to the substrate. However, the particle beam may also actively cause the desorption of physically adsorbed molecules from the substrate surface. Therefore, the etching gas required for the particle-induced reaction can be (at least partially) desorbed by the particle beam itself. Consequently, conventional methods may limit reaction efficiency, as easily desorbed molecules are (primarily) bound to the substrate via physical adsorption.

[0163] However, the present invention can generate highly reactive species (e.g., free radicals and / or highly reactive compounds) from precursor gases. This can increase the likelihood of the generated species undergoing chemisorption with the material of the object O (while decreasing the likelihood of the generated species undergoing physisorption with the material of the object O). For example, the species can be generated such that chemisorption primarily dominates the interaction between the species and the surface of the object O. Consequently, desorption of the species from the surface of the object O can be minimized during particle-induced processing of the object. Consequently, particle-induced reactions with the species can be more efficient (e.g., etching can be performed more quickly).

[0164] Figure 2 illustrates a first example of a portion of an apparatus according to the present invention containing an activator. Specifically, Figure 2 illustrates an exemplary configuration of the second chamber K2. Compared to Figure 1, the apparatus of Figure 2 does not include a filter. Activator A may include a plasma cell that ejects plasma component C into the vacuum chamber of the second chamber K2. The input opening of the guide G may be positioned in the path of component C, allowing component C to couple to the guide G. For example, using the configuration of Figure 2, components C with various charges may couple to the guide. In this example, since components C with non-zero net charge can be absorbed by the waveguide G, the waveguide G may be charged. In this configuration, the apparatus may include a highly inert guide (e.g., a highly inert inner wall) because various reactive species may interact with the guide. For example, in this configuration, the inner wall of the guide may include a resistive coating (e.g., a Teflon coating). The resistive coating ensures the long-term presence of the species in the guide. For example, the coating can be implemented to minimize reaction with the component so that the component is not easily absorbed or accumulated on the inner wall.

[0165] FIG3 illustrates a second example of a portion of an apparatus including an activator according to the present invention. Specifically, FIG3 also illustrates an exemplary configuration of the second chamber K2. Compared to FIG2 , the guide G in FIG3 is set at a predetermined potential R. For example, the predetermined potential may include ground potential. For example, the predetermined potential may include zero volts. In this example, the guide G acts as a filter. That is, components C of various charges may be coupled into the guide G (as explained in FIG2 ). However, because the guide G is electrically grounded to the predetermined potential R, components C with positive or negative net charge may be conductively guided toward the guide and thus absorbed by the guide. Consequently, primarily neutral components C may be guided into the first chamber K1 onto the object O. Furthermore, the configuration of FIG3 allows the guide G to be grounded relative to the first chamber K1. This minimizes charging effects caused by the guide G within the first chamber. For example, a charged guide G may interact with the particle beam B and / or the object O in an undesirable manner. 3 , the potentially disruptive effects of the charged guide G within the first chamber K1 can be minimized. For example, the charged guide G can deflect the particle beam B of charged particles. This deflection can be minimized (or eliminated) by electrically grounding the guide G (as described herein).

[0166] FIG4 illustrates a third example of a portion of a device according to the present invention containing an activator. Specifically, FIG4 also illustrates an exemplary configuration of the second chamber K2. Compared to FIG2 , a filter F and a beam shaper S are positioned between the activator A (e.g., a plasma cell) and the input opening of the guide G. The filter F may comprise an ion filter as described herein. For example, the component C transmitted from the plasma cell may be deflected by the filter based on its charge. For example, only neutral components C may pass through the ion filter unaffected. Along another travel path, a splitter may be positioned as the beam shaper S. The splitter may be funnel-shaped. For example, the splitter may comprise a molecular beam splitter. The splitter may be positioned within the device to reduce the angular distribution of (e.g., neutral) components C that have passed through the filter F. For example, the splitter may be adapted to collimate the beam of component C. This allows for more efficient coupling of component C into the guide. For example, the splitter may allow the beam diameter of component C to reside substantially within the input opening of the guide.

[0167] FIG5 shows an example of a portion of an apparatus according to the present invention comprising a guide G, an object O, and a beam unit BU. It is noted that the first chamber K1 is shown to include the object O. The beam unit BU may also, for example, extend at least partially into the first chamber K1. The beam unit BU may, for example, include one or more beam shapers and / or beam focusing elements. The beam unit BU may, for example, include a particle source for the particle beam B. For example, when the particle beam B comprises an electron beam, the beam unit BU may include a beam shaper and / or focusing element known from scanning electron microscopes. For example, when the particle beam B comprises an ion beam, the beam unit BU may include a beam shaper and / or focusing element known from focused ion beam devices.

[0168] The beam unit BU can be configured to adapt various beam parameters for particle-induced processing of an object. The beam unit BU can also be configured for imaging purposes. For example, the beam unit BU can be adapted to produce an image of the object O via the particle beam.

[0169] FIG5 schematically illustrates the localized presence of component C on object O. An output opening of a guide G can be positioned near object O, where the output opening can release component C onto object O. Due to the position of guide G, component C can be contained only within subregion SO of the object. Other areas of object O must remain shielded from component C. The beam unit BU can be configured to direct the particle beam B into (a portion of) subregion SO to induce a particle-induced reaction in the subregion. If the particle beam B is directed outside of subregion SO, a particle-induced reaction will (substantially) not occur, as component C may not be present (in significant quantities) outside of subregion SO.

[0170] For example, the apparatus can be configured such that the overall pressure in the first chamber K1 can range from 1 x 10-7 mbar to 1 x 10-4 mbar. This pressure can be maintained during processing of an object using the component. However, the local pressure within a subregion (e.g., the local pressure of component C) can be higher in comparison. For example, the local pressure of component C can range from 1 x 10-3 mbar to 1 x 10-2 mbar.

[0171] For example, the beam unit BU can be configured to set a specific extraction voltage of a particle beam (e.g., an electron beam and / or an ion beam) for a particle induction process. The extraction voltage can range, for example, from 0.1 kV to 3 kV, preferably from 0.15 kV to 1 kV, more preferably from 0.2 kV to 0.8 kV, and most preferably from 0.3 kV to 0.6 kV.

[0172] For example, the beam unit BU can be configured to set a specific beam current of a particle beam (e.g., an electron beam and / or an ion beam) for a particle-induced reaction. The beam current can range, for example, from 1 to 500 pA, preferably from 2 to 300 pA, more preferably from 5 to 100 pA, and most preferably from 10 to 60 pA.

[0173] Subsequently, examples of processing that can be performed by the apparatus according to the present invention will be described.

[0174] For example, object O may include a reticle for deep UV lithography (i.e., a DUV reticle). The DUV reticle may include an absorber layer for absorbing DUV light. For example, pattern elements may be formed from the absorber layer on the DUV reticle. The absorber layer (and / or corresponding pattern elements) may be positioned on a capping layer of the DUV reticle. The absorber layer may include silicon nitride (e.g., SiN). The capping layer may include silicon oxide (e.g., SiO 2). It is important to note that the DUV reticle may include reticle defects. For example, portions of the DUV reticle may include the absorber layer, however, this should not be the case by design. This material may be considered excess absorbing material (and may also be referred to as dark defects).

[0175] In one example, a method according to the present invention may include removing excess absorber material from a DUV mask. Thus, excess silicon nitride-containing material may be removed via the apparatus. For this purpose, high etch selectivity relative to a capping layer containing silicon oxide may be desirable. That is, the particle-induced process should remove excess absorber material while not (significantly) attacking / removing adjacent capping layers. For example, to etch silicon nitride on a silicon dioxide layer, a specific precursor gas may be provided by an activation apparatus as described herein. For example, the relative precursor gas may comprise a gaseous mixture of argon, CF₄, and O₂, which may be provided to the activator via the relative reactive gas. In one example, the ratio of argon to CF₄ to O₂ in the precursor gas may be 5:4:1. This gas mixture corresponding to the precursor gas may be activated within a plasma cell of the apparatus. For example, the plasma cell may form a plasma of the precursor gas at an excitation frequency of 13.56 MHz and a power between 400 W and 100 W. The plasma of the precursor gas may contain reactive species (e.g., neutral or charged radicals). In one example, the neutral species (e.g., neutral radicals) generated in the plasma may be filtered and transported to the object O via a guide G (as described herein). Consequently, the neutral species may be present in a subregion of the object O. Due to the reactive nature of the generated neutral species, chemical adsorption of the neutral species on the surface of the object may occur. A particle beam in the form of an electron beam may then be provided within the subregion to induce electron-induced etching of silicon nitride using the neutral species. The neutral species generated from the gaseous mixture of precursor gases may selectively etch silicon nitride relative to silicon oxide.

[0176] It is worth noting that the selectivity can be adjusted by changing the ratio of gas components in the precursor gas (for example, by changing the ratio of argon, CF₄, and O₂ in the precursor gas). The selectivity can also be adjusted by adjusting at least one plasma-influencing parameter of the plasma unit. The selectivity can also be adjusted by adjusting at least one beam parameter of the particle beam B provided to the object O.

[0177] In another example, object O may comprise a reticle for EUV lithography (i.e., an EUV reticle). The EUV reticle may comprise a first absorber layer comprising ruthenium (Ru). The EUV reticle may further comprise a second absorber layer comprising tantalum (Ta). The first absorber layer may be disposed on the second absorber layer. A pattern element may be formed from the first and second absorber layers. The EUV reticle may further comprise a capping layer. The capping layer may comprise ruthenium (Ru) and / or rhodium (Rh). The second absorber layer may be disposed on the capping layer. Thus, the EUV reticle may, for example, comprise a stack of layers in the following order: a first absorber layer (comprising ruthenium), a second absorber layer (comprising tantalum), and a capping layer (comprising ruthenium and / or rhodium). It may be desirable to remove a portion of the first absorber layer comprising ruthenium without (significantly) attacking / removing the underlying second absorber layer. Therefore, it may be desirable to etch a portion of the first absorber layer with high selectivity relative to the second absorber layer. For example, it may be desirable to remove excess material from the first absorber layer when this excess material forms dark defects on the EUV reticle.

[0178] In one example, a method according to the present invention may include removing a ruthenium-containing material with sufficient selectivity relative to a tantalum-containing material. For example, a relative precursor gas may include a gaseous mixture of Ar, CCl₄, and O₂. In one example, the ratio of Argon to CCl₄ to O₂ in the precursor gas may be 5:4:1. In another example, the relative precursor gas may include a gaseous mixture of Ar, Cl₂, and O₂. In one example, the ratio of Argon to Cl₂ to O₂ in the precursor gas may be 5:4:1. The gas mixture corresponding to the precursor gas may be activated within a plasma cell of an apparatus. For example, the plasma cell may form a plasma of the precursor gas based on an excitation frequency of 13.56 MHz and a power between 400 W and 100 W. As described herein, neutral species generated in the plasma may be directed onto a subregion of an object. A particle beam may be provided in the form of an electron beam to induce electron-induced etching of the ruthenium by the neutral species within the subregion. Neutral species generated from the gaseous mixture of precursor gases can effect a selective etch of ruthenium relative to tantalum-containing materials.

[0179] It is worth noting that selectivity can be adjusted by changing the ratio of gas components in the precursor gas (for example, by changing the ratio of argon and CCl₄ to O₂, or the ratio of argon and Cl₂ to O₂). Selectivity can also be adjusted by adjusting at least one plasma-influencing parameter of the plasma unit. Selectivity can also be adjusted by adjusting at least one beam parameter of the particle beam B provided to the object O.

[0180] While the present invention has been described in conjunction with certain embodiments, it should be understood that the invention is not limited to the disclosed embodiments. Rather, it is intended to cover various modifications and equivalent claims that may come within the scope of the claims hereafter, which should be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures permitted under the law.

[0181] 100: Installation 101: Reaction gas container 102: Reaction gas container 103: Reaction gas container 1101: First valve 1102: Second valve 1103: The third valve 1104: Activation Valve 1105: Pilot valve A: Activator B: Particle beam BU: Beam Unit C: Component F: Filter G: Guide K1: First chamber K2: Second chamber O: Object R: Predetermined potential S: Beam Shaper SO: sub-area P: Precursor gas

Claims

1. An apparatus for processing an object (O), comprising: An activator (A) is used to activate a precursor gas and generate a component (C) from the precursor gas; a guide (G) is used to provide the component to a local area of ​​the object; and a beam unit (BU) is used to provide a particle beam (B) to the object; wherein the particle beam is controlled to irradiate the component located on a local area of ​​the object to induce a particle-induced reaction.

2. The apparatus as claimed in claim 1, wherein the guide is configured such that the component can be provided on a sub-region (SO) of the object (O) such that substantially only the sub-region is exposed to the component.

3. The device as claimed in claim 1 or 2, wherein the device includes a first chamber (K1) including a support for the article and the guide extending at least partially within the first chamber.

4. The apparatus as claimed in claim 1 or 2, wherein, in the processing position of the article, an opening of the guide that releases the component onto the article is spaced at most 100 μm from the article.

5. The device as claimed in claim 1 or 2, wherein an inner wall of the guide includes a coating that substantially resists the component.

6. The apparatus as claimed in claim 5, wherein the coating comprises at least one or a combination of polytetrafluoroethylene, steel, plastic and dielectric material.

7. The apparatus as claimed in claim 1 or 2, wherein the activator is separated from the object so that the object is not subject to the activation reaction of the precursor gas.

8. The apparatus as claimed in claim 2, wherein the apparatus includes a second chamber (K2) including the activator; wherein the second chamber and the first chamber are at least partially coupled by the guide such that the component can be transferred from the second chamber to the first chamber.

9. The apparatus as claimed in claim 1 or 2, wherein the activator includes a plasma unit to form a plasma for activating the precursor gas.

10. The apparatus as claimed in claim 9, wherein the component comprises the plasma component.

11. The apparatus as claimed in claim 1 or 2, wherein the activator includes a radiation unit that uses electromagnetic radiation to irradiate the precursor gas to ionize and activate the precursor gas.

12. The apparatus as claimed in claim 11, wherein the component comprises the ionized precursor gas.

13. The apparatus as claimed in claim 1 or 2, wherein the component comprises free radicals and / or compounds that are not substantially present in the precursor gas.

14. The apparatus as claimed in claim 1 or 2, wherein the apparatus includes a filter (F) for filtering a specific component from a plurality of components generated from the precursor gas, such that the specific component is provided on a portion of the article.

15. The apparatus as claimed in claim 14, wherein the filter (F) comprises an ion filter and / or a neutralization plate.

16. The apparatus as claimed in claim 14, wherein the apparatus is configured to set the guide at a predetermined potential (R) to filter the specific component.

17. The apparatus as claimed in claim 1, wherein the activator is configured to eject the component in a beam onto the guide.

18. The apparatus of claim 17, wherein the apparatus includes a beam shaper (S) for shaping the beam component ejected from the activator.

19. The apparatus as claimed in claim 1 or 2, wherein the apparatus includes at least one reaction gas container (101, 102, 103) for providing the precursor gas; wherein the at least one reaction gas container is configured to store at least one of the following reaction gases: a reaction gas containing a halide, a reaction gas containing oxygen, and a reaction gas containing hydrogen.

20. The apparatus as claimed in claim 1 or 2, wherein the apparatus includes two or more of the reaction gas containers (101, 102, 103) for supplying the precursor gas; wherein the apparatus is configured to apply the precursor gas, the precursor gas system being a predetermined combination of two or more reaction gases.

21. The apparatus as claimed in claim 1 or 2, wherein the beam unit is configured to locally focus the particle beam onto the object during processing.

22. The apparatus as claimed in claim 1 or 2, wherein based on at least a portion of the component and the particle beam locally provided on the object, the apparatus is configured to remove material from the object.

23. A method for processing an object, comprising: Activate a precursor gas to generate a component from the precursor gas; Provide the component on a portion of the object; And provide a particle beam onto a local part of the object; wherein the particle beam is controlled to irradiate the component located on the local part of the object to induce a particle-induced reaction.

24. The method as described in claim 23, wherein the component is provided on a sub-region of the object such that substantially only the sub-region is exposed to the component; wherein the particle beam is provided within the sub-region.

25. The method as described in claim 23 or 24, wherein the method is performed using the apparatus as described in any one of claims 1-22.

26. A computer program for remotely processing objects using plasma electronics, comprising instructions that, when executed, perform the method as described in any one of claims 23-25.

27. A computer-readable medium storing a computer program for remote plasma electronic processing of an object, comprising instructions, wherein when executed by one or more computers, the instructions cause the one or more computers to perform the method as described in any one of claims 23-25.

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