Aluminum connectors and semiconductor devices

Abstract

This invention provides an aluminum bonding wire or aluminum bonding strip that exhibits good temperature cycling reliability even in high-temperature temperature cycling tests, as required for next-generation silicon carbide power semiconductor devices, and also exhibits good first bonding strength. The aluminum bonding wire or aluminum bonding strip contains 3.0% by mass to 20.0% by mass of silicon. When the silicon concentration (atomic %) in the depth direction from the surface of the aluminum bonding wire or aluminum bonding strip is measured by X-ray photoelectron spectroscopy (XPS), the ratio of the average silicon concentration Ca in region a (5 nm to 50 nm from the surface) to the average silicon concentration Cb in region b (800 nm to 1200 nm from the surface) is 0.03 to 0.5.

Description

Aluminum bonding wire or aluminum bonding tape The present invention relates to an aluminum bonding wire or an aluminum bonding ribbon. In semiconductor devices, electrodes formed on a semiconductor wafer are connected to electrodes on a lead frame or substrate via bonding wires (wires) or bonding tapes (ribbons). In power semiconductor devices, bonding wires or bonding tapes made primarily of aluminum (Al) are used. The diameter of aluminum bonding wires typically ranges from 100 μm to 600 μm, while the width of aluminum bonding tapes typically ranges from 100 μm to 3000 μm, and the thickness typically ranges from 50 μm to 600 μm. Herein, aluminum bonding wires and aluminum bonding tapes are collectively referred to as aluminum connecting materials. In power semiconductor devices, silicon (Si) is often used as the material for semiconductor wafers, and aluminum-silicon alloys or aluminum-copper alloys are often used as the materials for electrodes formed on the semiconductor wafers. Furthermore, power semiconductor devices using aluminum bonding wire or aluminum bonding ribbon are often used in high-power equipment such as air conditioners and solar power generation systems, as well as in automotive semiconductor devices. The bonding methods for aluminum bonding wire or ribbon include a first bonding method with an electrode on a semiconductor wafer and a second bonding method with an electrode on a lead frame or substrate, both of which utilize wedge bonding. Wedge bonding refers to a method in which ultrasonic vibrations and loads are applied to the aluminum bonding wire or ribbon using a metal jig (tool), breaking the surface oxide film between the wire or ribbon and the electrode material, exposing a new surface and performing solid-phase diffusion bonding. This bonding method is characterized by the solid-phase bonding without melting the bonding material, distinguishing it from welding techniques that melt the bonding material. The next generation of power semiconductor devices is required to operate stably for a longer period of time than general power semiconductor devices. Power semiconductor devices operate by repeatedly connecting and disconnecting current. If current is supplied to a silicon semiconductor chip through an aluminum bonding wire or an aluminum bonding ribbon, the temperature of the first bonding portion rises. On the other hand, if the current supply is stopped, the temperature of the first bonding portion drops. In this way, the first bonding portion repeatedly heats up and cools down when the power semiconductor is in operation. In this way, the first bonding portion repeatedly bears the thermal stress generated by the thermal expansion difference between the aluminum bonding wire or the aluminum bonding ribbon and the semiconductor chip. When using an aluminum bonding wire or an aluminum bonding ribbon containing only high-purity aluminum, the aluminum bonding wire or the aluminum bonding ribbon will break in a relatively short period of time due to the thermal stress, making it difficult to meet the performance required of the next generation of power semiconductor devices. Therefore, the next generation of power semiconductor devices is required to improve the life of the bonding portion (hereinafter also referred to as "temperature cycle reliability") as the first bonding portion heats up and cools down. To meet the requirements for temperature cycling reliability, aluminum bonding wires have been proposed that focus on improving mechanical strength. As a method to improve the mechanical properties of aluminum bonding wires, a method has been proposed to add specific elements to aluminum. Patent Document 1 discloses a bonding wire comprising an aluminum alloy containing at least magnesium (Mg) and silicon (Si), wherein the total content of Mg and Si is 0.03 mass % or more and 0.3 mass % or less. According to this patent document, the high strength effect obtained by solid solution strengthening of magnesium or silicon or the high strength effect obtained by precipitation of magnesium silicide (Mg 2Si) The crack progression inhibition effect obtained was that the bonding strength of the first bonding portion decreased with delay in the cold temperature cycle test in the temperature range of 70°C to 120°C. Patent Document 2 discloses a bonding wire characterized by a microstructure comprising an alloy containing 0.01-0.2 mass% iron (Fe), 1-20 massppm silicon (Si), and the remainder being aluminum with a purity of 99.997 mass% or greater. The solid solution content of iron is 0.01-0.06%, the amount of iron precipitated is no more than seven times the solid solution content of iron, and the average grain size is 6-12 μm. This patent document discloses that uniformly dispersing intermetallic compound particles of iron and aluminum in the aluminum enhances the mechanical strength of the matrix and further refines the recrystallized grains, thereby suppressing a decrease in the bond strength of the first bond during thermal shock testing in the temperature range of -50°C to 200°C. Patent Document 3 discloses a bonding wire formed by melting an aluminum-silicon alloy containing 0.1 to 5% silicon (Si) by mass, with the remainder consisting of aluminum and impurities, ejecting the melt, rapidly cooling it, and forming it into a thin wire. This patent document discloses that by rapidly cooling the molten aluminum-silicon alloy and finely and evenly dispersing the silicon, mechanical strength is improved. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Application Publication No. 2014-131010 [Patent Document 2] Japanese Patent Application Publication No. 2014-129578 [Patent Document 3] Japanese Patent Application Publication No. 59-57440 [Problem to be solved by the invention] As described above, the next generation of power semiconductor devices is required to withstand longer use time than general power semiconductor devices. When the power semiconductor device is in operation, the temperature of the first bonding portion repeatedly rises and falls. As a result, since the linear thermal expansion coefficient of the aluminum bonding wire or aluminum bonding tape is greater than that of the semiconductor chip, there is a case where thermal stress is generated in the first bonding portion due to the difference in the linear thermal expansion coefficient of the two (or even the linear thermal expansion difference of the two), and eventually the aluminum bonding wire or aluminum bonding tape is fatigue-damaged. One of the tests for accelerating the evaluation of the life (temperature cycle reliability) of the bonding portion accompanied by such a rise and fall in the temperature of the first bonding portion is a temperature cycle test. The aluminum bonding wire or aluminum bonding tape used for the next generation of power semiconductor devices needs to show excellent temperature cycle reliability in the temperature cycle test. Silicon carbide (SiC), a material with higher heat resistance, is expected to be increasingly used in next-generation power semiconductor devices, replacing the previously mainstream silicon (Si) power semiconductors. Connections to SiC power semiconductors require temperature cycling reliability under even stricter conditions than currently required. For example, while silicon power semiconductors are required to maintain temperature cycling reliability within the -40°C to 150°C range, SiC power semiconductors are required to maintain temperature cycling reliability within the stricter -40°C to 175°C range. Further leveraging SiC's heat resistance for high-output next-generation SiC power semiconductor devices requires excellent thermal cycling reliability even under harsh test conditions, where the upper temperature limit of the thermal cycling test is raised to 185°C. Raising the upper temperature limit of the thermal cycling test from 175°C to 185°C increases the temperature difference during the thermal cycle by 10°C, increasing the thermal expansion difference between the aluminum bonding wires and aluminum bonding ribbons, accelerating fatigue failure and becoming a problem. Furthermore, if a poor bond occurs during bonding, such as when the aluminum bonding wire or aluminum bonding tape peels off from the electrode, this can lead to defects in the product or a reduction in manufacturing yield. Therefore, good bonding strength is required at each bonding point. In this regard, applying strong ultrasonic vibrations or loads to achieve good bonding strength in the first bonding point can sometimes damage the semiconductor chip. In particular, when using aluminum bonding wire or aluminum bonding tape that has been strengthened by the addition of silicon or other materials, its hardness can easily damage the semiconductor chip during the first bonding point. Adjusting the ultrasonic vibration or load to reduce this damage makes it impossible to stably ensure the bonding area due to the high or low deformation resistance or instability of the deformation direction, and thus, sufficient bonding strength (hereinafter referred to as "first bonding strength") cannot be achieved at the first bonding point. These problems during the initial bonding of the first bonding point can, in turn, lead to reduced or unstable temperature cycling reliability, thus hindering the practical use of aluminum bonding wire or aluminum bonding tape that has been strengthened by the addition of silicon or other materials. The present invention was completed in response to the above-mentioned challenges. Its purpose is to provide an aluminum bonding wire or aluminum bonding ribbon that exhibits excellent thermal cycling reliability even in high-temperature thermal cycling tests and excellent primary bonding strength, as required for next-generation silicon carbide power semiconductor devices. [Technical Means for Solving the Problem] The present inventors conducted intensive research to address the above-mentioned issues and discovered that the following aluminum bonding wire or aluminum bonding ribbon can solve the above-mentioned problems: the aluminum bonding wire or aluminum bonding ribbon contains 3.0 mass % to 20.0 mass % silicon, and when the silicon concentration (atomic %) in the depth direction from the surface of the aluminum bonding wire or aluminum bonding ribbon is measured by X-ray photoelectron spectroscopy (XPS), the ratio Ca / Cb of the average concentration Ca of the silicon element in region a at a depth of 5 nm to 50 nm from the surface to the average concentration Cb of the silicon element in region b at a depth of 800 nm to 1200 nm from the surface is 0.03 to 0.5. Based on this finding, further research was conducted, leading to the completion of the present invention. That is, the present invention includes the following: <1> An aluminum bonding wire or ribbon containing 3.0% to 20.0% by mass of silicon, wherein, when the silicon concentration (atomic %) in the depth direction from the surface of the aluminum bonding wire or ribbon is measured by X-ray photoelectron spectroscopy (XPS), the ratio (Ca / Cb) of the average silicon concentration Ca in region a at a depth of 5 nm to 50 nm from the surface to the average silicon concentration Cb in region b at a depth of 800 nm to 1200 nm from the surface is 0.03 to 0.5. <2> The aluminum bonding wire or ribbon according to <1>, wherein the average diameter of the silicon phase in the L-section (a cross-section in the central axis direction including the central axis) of the aluminum bonding wire or ribbon is 0.8 μm to 4 μm. <3> The aluminum bonding wire or ribbon according to <1> or <2>, wherein the average concentration Cf of silicon in a region at a depth of 5 nm to 30 nm from the surface is 0.1 atomic % to 4 atomic %. <4> The aluminum bonding wire or ribbon according to any one of <1> to <3>, wherein, when measuring the crystal orientation of the aluminum phase in an L cross-section (a cross-section in the central axis direction including the central axis) of the aluminum bonding wire or ribbon, the orientation ratio of the <100> crystal orientation having an angle difference of 15° or less with respect to a direction parallel to the central axis (RD direction) is 15% to 50%. <5> The aluminum bonding wire or ribbon according to any one of <1> to <4>, further comprising a total of 10 mass ppm to 800 mass ppm of one or more of strontium, sodium, phosphorus, and boron. <6> The aluminum bonding wire or ribbon according to any one of <1> to <5>, further comprising a total of 100 mass ppm to 2000 mass ppm of one or more of nickel, titanium, iron, zinc, and magnesium. <7> The aluminum bonding wire or ribbon according to any one of <1> to <6>, wherein the total concentration of elements other than aluminum, silicon, strontium, sodium, phosphorus, boron, nickel, titanium, iron, zinc, and magnesium in the aluminum bonding wire or ribbon is 0.5 mass % or less. <8> The aluminum bonding wire or ribbon according to any one of <2> to <7>, wherein the average diameter of the silicon phase is a value measured using a SEM-EDS-EBSD apparatus. <9> The aluminum bonding wire or ribbon according to any one of <4> to <8>, wherein the orientation ratio of the crystal orientation is a value measured using a SEM-EDS-EBSD apparatus. <10> The aluminum bonding wire or aluminum bonding ribbon according to any one of <1> to <9>, which is used in a semiconductor device. <11> A semiconductor device comprising the aluminum bonding wire or aluminum bonding ribbon according to any one of <1> to <10>. [Effects of the Invention] According to the present invention, an aluminum bonding wire or aluminum bonding ribbon can be provided that exhibits excellent temperature cycling reliability even in high-temperature temperature cycling tests and exhibits excellent first bonding strength, which is required for next-generation silicon carbide power semiconductor devices. The following describes preferred embodiments of the present invention in detail. While drawings are sometimes referenced during the description, each drawing merely schematically illustrates the shapes, sizes, and arrangements of the components to facilitate understanding of the invention. The present invention is not limited to the following embodiments and examples and may be arbitrarily modified and implemented without departing from the scope of the present invention and its equivalents. [Aluminum bonding wire or aluminum bonding ribbon] The aluminum bonding wire or aluminum bonding ribbon of the present invention is characterized in that it contains silicon in an amount of not less than 3.0 mass % and not more than 20.0 mass %, and when the silicon concentration (atomic %) in the depth direction from the surface of the aluminum bonding wire or aluminum bonding ribbon is measured by X-ray photoelectron spectroscopy (XPS), the ratio Ca / Cb of the average concentration Ca of the silicon element in region a at a depth of not less than 5 nm and not more than 50 nm from the surface to the average concentration Cb of the silicon element in region b at a depth of not less than 800 nm and not more than 1200 nm from the surface is not less than 0.03 and not more than 0.5. As described above, in a temperature cycle test (hereinafter also referred to as "TCT (Temperature Cycle Test)"), when using an aluminum bonding wire or aluminum bonding ribbon containing only high-purity aluminum, cracks in the aluminum bonding wire or aluminum bonding ribbon progress at a relatively fast rate, and reduced temperature cycle reliability becomes a problem. By using an aluminum alloy to which a high concentration of silicon is added, it has been confirmed that the thermal expansion of the aluminum bonding wire or aluminum bonding ribbon can be reduced, thereby improving the temperature cycle reliability. On the other hand, even when using an aluminum alloy to which a high concentration of silicon is added, sufficient temperature cycle reliability may not be achieved in a high-temperature temperature cycle test (hereinafter also referred to as "high-temperature temperature cycle test" or "high-temperature TCT") using a relatively high upper limit temperature (e.g., 185°C). As described above, for next-generation power semiconductor devices with high heat resistance, such as silicon carbide power semiconductor devices, it is required to exhibit good temperature cycle reliability even in a high-temperature temperature cycle test using such harsh test conditions, and further improvement of temperature cycle reliability is needed. During high-temperature temperature cycling tests, it was confirmed that defects were promoted near the initial bonding interface of the aluminum bonding wire or aluminum bonding ribbon during the first bonding step. Regarding the bonding method for aluminum bonding wire or aluminum bonding ribbon, diffusion at the bonding interface is typically suppressed to perform bonding at room temperature, and the surface condition of the aluminum bonding wire or aluminum bonding ribbon has a stronger impact on the bonding properties. During high-temperature temperature cycling tests, the linear thermal expansion difference of the bonding portion is amplified by the increased temperature difference during the temperature cycle, and thermal strain concentrates near the bonding interface from an early stage. Therefore, the surface condition of the aluminum bonding wire or aluminum bonding ribbon can become a factor that accelerates the progression of cracks. Cracks grow at the bonding interface, or cracks progress within the aluminum bonding wire or aluminum bonding ribbon, thereby accelerating the degradation of temperature cycling reliability. The present inventors have discovered that surface modification of aluminum bonding wire or ribbon is effective in preventing the development of cracks at the bonding interface, a factor that degrades reliability during high-temperature temperature cycling tests. The surface condition of aluminum bonding wire or ribbon made from aluminum alloys containing a high concentration of silicon (hereinafter referred to as "high-concentration aluminum-silicon alloys") has a greater impact on temperature cycling reliability. Specifically, regarding aluminum bonding wires or ribbons containing a high-concentration aluminum-silicon alloy, it has been discovered that by providing a predetermined silicon concentration gradient in the depth direction from the surface to a predetermined depth, specifically, by providing a silicon concentration gradient such that the ratio (Ca / Cb) between the average silicon concentration (Ca) in region a (5 nm to 50 nm depth from the surface) and the average silicon concentration (Cb) in region b (800 nm to 1200 nm depth from the surface) is 0.03 to 0.5, crack progression near the bonding interface can be suppressed even during high-temperature temperature cycling tests, achieving excellent temperature cycling reliability. Furthermore, it has been discovered that by modifying the surface of the aluminum bonding wire or ribbon containing a high-concentration aluminum-silicon alloy to provide this predetermined silicon concentration gradient, problems associated with initial bonding at the first bonding portion can be resolved, resulting in excellent primary bond strength. The reason why the aluminum bonding wire or aluminum bonding ribbon of the present invention exhibits excellent temperature cycling reliability and excellent first bonding strength even in a high-temperature temperature cycling test is presumably as follows. In an aluminum bonding wire or ribbon containing a high-concentration aluminum-silicon alloy, a silicon concentration gradient is established in the depth direction from the surface to a certain depth, i.e., a low silicon concentration near the surface and a high silicon concentration deeper within the ribbon, while satisfying the aforementioned Ca / Cb ratio. This enhances the surface deformability of the aluminum bonding wire or ribbon when subjected to ultrasonic vibration or load during bonding, promotes the destruction of the surface oxide film, and facilitates the diffusion of aluminum atoms at the bonding interface. As a result, it is believed that this contributes to increased bonding strength, stabilized deformation, and maintained a strong bond at the bonding interface during temperature cycling tests. These effects are believed to be due to the relative softening and higher purity (in terms of aluminum concentration) of the surface side of the aluminum bonding wire or ribbon relative to the deeper portion of the ribbon from the surface to a certain depth. The interface control effect produced by the relatively low concentration gradient of silicon concentration on the surface side, the internal silicon phase described later, which helps to reduce the difference in linear thermal expansion coefficient, and the thermal stress reduction effect based on this work synergistically, thereby achieving the significant effect of achieving good temperature cycling reliability even in temperature cycling tests with an upper limit temperature of 185°C. As shown above, the aluminum bonding wire or aluminum bonding ribbon of the present invention has its surface modified so that the silicon concentration has a predetermined gradient in the depth direction from the surface to a certain depth. As a result, it is speculated that, as described above, it exhibits good temperature cycling reliability even in high-temperature temperature cycling tests and can also exhibit good primary bonding strength. The following describes in detail the structure of the aluminum bonding wire or aluminum bonding ribbon of the present invention. Hereinafter, the aluminum bonding wire or aluminum bonding ribbon will be collectively referred to as "aluminum bonding wire, etc." or "wire, etc." -Silicon Concentration- The aluminum bonding wire or aluminum bonding ribbon of the present invention contains 3.0 mass % or more and 20.0 mass % or less of silicon. By setting the silicon concentration to a range of 3.0% by mass to 20.0% by mass, it helps to reduce the thermal strain of the joint and improve the temperature cycling characteristics. Specifically, by setting the silicon concentration to 3.0% by mass or more, the improvement effect of temperature cycling reliability can be increased even in high-temperature temperature cycling tests. In addition, with the advancement and optimization of the equipment and conditions used for manufacturing or joining wires, etc., higher values ​​can be allowed while suppressing abnormalities such as wire breakage or deterioration of surface properties during processing, reduction in initial bonding strength due to hardening, or damage to semiconductor chips. However, by setting the silicon concentration to 20.0% by mass or less, such abnormalities can be well suppressed and the required temperature cycling reliability can be achieved. From the perspective of obtaining good temperature cycling reliability even in a high-temperature temperature cycling test, the concentration of silicon in the aluminum bonding wire of the present invention is 3.0 mass % or more, preferably 3.5 mass % or more, more preferably 4.0 mass % or more, and further preferably 4.2 mass % or more, 4.4 mass % or more, 4.5 mass % or more, 4.6 mass % or more, 4.8 mass % or more, or 5.0 mass % or more. Furthermore, to effectively suppress abnormalities such as a decrease in initial bonding strength or damage to the semiconductor wafer due to hardening, while achieving the desired temperature cycling reliability, the silicon concentration in the aluminum bonding wire of the present invention is 20.0 mass% or less, preferably 19.0 mass% or less, 18.0 mass% or less, 17.0 mass% or less, 16.0 mass% or less, 15.0 mass% or less, 14.5 mass% or less, 14.0 mass% or less, 13.5 mass% or less, 13.0 mass% or less, or 12.5 mass% or less. Furthermore, if the hardness of the aluminum bonding wire is high, damage to the semiconductor wafer may occur more easily during the initial bonding process, depending on the bonding conditions of ultrasonic vibration and load. From the perspective of obtaining good bonding strength under a wider range of bonding conditions, the silicon concentration in the aluminum bonding wire of the present invention is preferably 12.0 mass% or less, further preferably 11.5 mass% or less or 11.0 mass% or less, and particularly preferably 10.8 mass% or less, 10.6 mass% or less, 10.5 mass% or less, 10.4 mass% or less, 10.2 mass% or less, or 10.0 mass% or less. The concentration of elements contained in the aluminum bonding wire of the present invention can be analyzed using, for example, an ICP (Inductively Coupled Plasma) emission spectrometer or an ICP mass spectrometer. If elements such as oxygen or carbon, which are atmospheric contaminants, are adsorbed on the surface of the aluminum bonding wire, it is effective to remove the adsorbed substances using an acid or base before analysis. The aluminum bonding wire, etc. of the present invention contains silicon in an amount of not less than 3.0 mass % and not more than 20.0 mass %, and is composed of an aluminum phase in which silicon is solid-dissolved in aluminum, and a silicon phase formed by siliconization or precipitation. Here, the aluminum phase may also contain other additive elements in addition to silicon. The silicon phase is a general term for siliconized materials and silicon precipitates. Siliconized materials are formed from the melt during solidification and are relatively coarse, with a size of about 1 to 25 μm. In contrast, silicon precipitates are formed in a solid state and are smaller, with a size of about 0.1 to several μm. The linear thermal expansion coefficient of the silicon phase is smaller than that of aluminum, which helps to reduce the difference in linear thermal expansion coefficient between the aluminum bonding wire, etc. and the semiconductor chip, thereby reducing thermal stress and improving temperature cycling reliability. - Silicon Concentration Gradient - When the silicon concentration (atomic %) in the depth direction from the surface of the aluminum bonding wire or aluminum bonding ribbon of the present invention is measured by X-ray photoelectron spectroscopy (XPS), the ratio Ca / Cb of the average silicon concentration Ca in region a at a depth of 5 nm to 50 nm from the surface to the average silicon concentration Cb in region b at a depth of 800 nm to 1200 nm from the surface is 0.03 to 0.5. In the present invention, the depth-direction silicon concentration gradient is measured and evaluated using X-ray photoelectron spectroscopy (XPS). XPS, utilizing the sputtering operation of the instrument, enables highly accurate quantitative analysis of aluminum bonding wires, etc., from the surface. XPS can accurately measure silicon concentrations as low as approximately 0.1 atomic %. In the present invention, when the gradient of silicon concentration in the depth direction is measured and evaluated by XPS, the silicon concentration is determined when the total of metallic silicon and metallic aluminum is assumed to be 100 atomic %. Figure 1 shows an example of the silicon concentration distribution in the depth direction of an aluminum bonding wire or ribbon according to the present invention, measured and evaluated using XPS. A predetermined silicon concentration gradient is observed in the region from the surface to a certain depth. Specifically, a concentration gradient is observed, such as a low silicon concentration at the surface, a high silicon concentration at depth, and a gradual increase in silicon concentration with depth. Regarding the silicon morphology detected by XPS, the targets include dissolved silicon in the aluminum phase, silicon particles (precipitated and crystallized), and intermetallic compounds containing silicon. While the sources of detected silicon may differ from those described above, these are not distinguished. Instead, the silicon concentration detected by XPS is used to determine whether the specified silicon concentration gradient (the aforementioned ratio Ca / Cb) is met. By adjusting the depth-wise silicon concentration gradient measured by XPS in this way, the desired objectives and effects can be achieved, which is a key feature of the present invention. The silicon concentration is determined based on the peak of metallic silicon (silicon with a valence of zero) detected by XPS. Because the peaks of metallic silicon and silicon oxide are detected at different energies, the concentration of metallic silicon can be determined separately from silicon oxide. The concentration of metallic silicon in the surface region of the aluminum bonding wire or aluminum bonding ribbon affects temperature cycling reliability or primary bond strength. Silicon oxide rarely forms on the surface of the aluminum bonding wire or aluminum bonding ribbon or on the surface of silicon particles. Even if it forms, silicon oxide is quite thin. Therefore, it has been confirmed to have little effect on temperature cycling reliability or primary bond strength. Therefore, it is excluded from the analysis target in the determination of the concentration gradient of the present invention. In the present invention, when the silicon concentration in the depth direction from the surface of an aluminum bonding wire or aluminum bonding ribbon is measured by XPS, the ratio Ca / Cb of the average silicon concentration Ca in region a at a depth of 5 nm to 50 nm from the surface to the average silicon concentration Cb in region b at a depth of 800 nm to 1200 nm from the surface is within a range of 0.03 to 0.5. The average silicon concentration Ca in region a, at a depth of 5 nm to 50 nm from the surface, is used here because this region a deforms due to ultrasonic vibration and load applied during bonding, significantly affecting the performance of the bonded interface. Analysis of the outermost region, at a depth of less than 5 nm from the surface, is easily affected by surface contamination, resulting in greater variability in the silicon concentration measured by XPS, and therefore excluded from the analysis. Furthermore, regions deeper than 50 nm from the surface are excluded from the analysis because they have less impact on the bonded interface. Furthermore, the average silicon concentration Cb in region b, at a depth of 800 nm to 1200 nm from the surface, is used because this is a depth range suitable for determining the silicon concentration representative of the internal composition of the aluminum bonding wire or ribbon, in order to avoid a nearly stable silicon concentration and to maintain analysis efficiency by requiring a long sputtering time during measurement. Then, for both region a (5 nm to 50 nm deep) and region b (800 nm to 1200 nm deep), the silicon concentration gradient is evaluated using the ratio Ca / Cb based on the average silicon concentrations (Ca and Cb), minimizing the impact of silicon concentration variations. Furthermore, to accurately determine the silicon concentration gradient in the depth direction, it is effective to use the average silicon concentration Cb in region b within the sample, measured by XPS, and compare it with the average silicon concentration Ca in region a on the sample surface, measured by the same method, to calculate the Ca / Cb ratio. This allows for highly accurate determination of the silicon concentration gradient in the depth direction, enabling the achievement of aluminum bonding wires or ribbons that exhibit excellent temperature cycling reliability and high primary bond strength during high-temperature temperature cycling tests. By keeping the ratio of silicon concentration near the surface to that deep within the aluminum bonding wire or ribbon, namely the ratio Ca / Cb, within a range of 0.03 to 0.5, the surface deformability of the aluminum bonding wire or ribbon when subjected to ultrasonic vibration or load during bonding is improved, the destruction of the surface oxide film is promoted, and the diffusion of aluminum atoms at the bonding interface is promoted. This allows the aluminum bonding wire or ribbon to exhibit excellent thermal cycling reliability and excellent first bond strength even in high-temperature thermal cycling tests. To achieve even better thermal cycling reliability and first bond strength even in high-temperature thermal cycling tests, the ratio Ca / Cb is preferably 0.48 or less, more preferably 0.46 or less, and even more preferably 0.45 or less, 0.44 or less, 0.42 or less, or 0.4 or less. By setting the lower limit of the ratio Ca / Cb to 0.03 or higher, the desired issues and effects can be resolved and achieved. However, it may also be 0.04 or higher, 0.05 or higher, 0.06 or higher, 0.08 or higher, or 0.1 or higher. In particular, a ratio Ca / Cb of 0.45 or lower can suitably achieve even better thermal cycling reliability in high-temperature thermal cycling tests and easily achieve even better primary bond strength. The present invention discovered that by controlling the ratio of silicon concentration near the surface to that deep within the silicon layer, namely the ratio Ca / Cb, within a certain range of 0.03 to 0.5, an aluminum bonding wire or ribbon exhibiting good temperature cycling reliability even in high-temperature temperature cycling tests and excellent primary bonding strength was achieved. Therefore, controlling this ratio Ca / Cb within a certain range is both effective and important for resolving the problem. In the present invention, the depth-direction silicon concentration in the region from the surface to a predetermined depth of an aluminum bonding wire or ribbon can be measured by excavating the surface of the aluminum bonding wire or ribbon in the depth direction (toward the center of the wire, etc.) using argon sputtering while performing compositional analysis using XPS. Specifically, by repeating 1) sputtering with argon gas and 2) compositional analysis of the post-sputtering surface, the variation in silicon concentration from the surface to the depth (center) of the aluminum bonding wire or ribbon (the so-called depth-direction concentration profile) can be determined. In one embodiment, the silicon concentration in the depth direction of the region from the surface to a certain depth of the aluminum bonding wire or aluminum bonding ribbon of the present invention is measured by the following steps (1) to (4). (1) Preparation of the Measurement Sample: Place the aluminum bonding wire or aluminum bonding tape sample to be measured on the sample stage. Adjust the position of the sample on the XPS device's operation screen so that the length direction of the sample becomes the width direction. Furthermore, if the sample is an aluminum bonding tape (having a rectangular or substantially rectangular cross-sectional shape with a width W and a thickness T), place it so that the width W is parallel to the surface of the sample stage, and the thickness T is perpendicular to the surface of the sample stage. (2) Measurement using XPS In the measurement using XPS, the measurement area is selected in such a way that the area near the top of the sample of the aluminum bonding wire or aluminum bonding tape becomes the measurement area on the screen of the SXI (Scanning X-ray Image) of the observation device. Here, the top of the sample of the aluminum bonding wire or aluminum bonding tape is the area directly above the central axis of the sample when the sample is observed from directly above. Then, under the following conditions, 1) sputtering using argon gas and 2) composition analysis of the surface after sputtering are repeated, and the measurement in the depth direction is performed from the surface of the sample to detect the spectra of Si2p and Al2p. The peaks of the spectra of Si2p and Al2p are detected at energies of approximately 98.5 to 99.5 eV and 71.5 to 73.0 eV, respectively. ・Measurement device: Versa Probe3 manufactured by ULVAC-PHI ・Ultimate vacuum degree: approximately 1×10 -8 Torr ・X-ray source: Monochromated aluminum (1486.6 eV) ・Measurement area: 100 μm (sample length direction) × 20 μm (sample circumference direction) square ・Photoelectron extraction angle: 45 degrees ・Detection depth: Several nm ・Argon gas sputtering acceleration voltage: 2 kV Sputtering area: 2 × 2 mm square Sputtering rate: 9.2 nm / min (silicon dioxide equivalent) ・Analysis pitch in the depth direction: 5 nm pitch (depth from the surface: 0 to 50 nm), 10 nm pitch (depth from the surface: 50 to 200 nm), 20 nm pitch (depth from the surface: more than 200 nm) As mentioned above, in the measurement by XPS, the sputtering rate and depth can be measured by the general silicon dioxide (SiO 2) Calculated by conversion. Furthermore, considering analysis accuracy, measurement time, and workability, the depth-direction analysis pitch can be selected with a finer pitch at the surface and a coarser pitch at depth. For example, as described above, a 5 nm pitch can be used for depths from 0 to 50 nm from the surface, a 10 nm pitch for depths from 50 to 200 nm from the surface, and a 200 nm pitch for depths exceeding 200 nm from the surface. (3) Quantification of each element of silicon and aluminum Based on the detection spectrum of Si2p and Al2p obtained at each depth position in the depth direction from the surface of the sample, the quantification of each element of silicon and aluminum is carried out by the following steps. In detail, the quantification of the silicon element is carried out for the quantification range (about 95.0 to 101.0 eV) of the energy of the peak of silicon 0 valence (metallic silicon) including Si2p. According to the shape of the above-mentioned peak, the energy values ​​of the low energy end and the high energy end are adjusted within the above-mentioned quantification range. The background of the quantification range is determined using the Shirley method, and the silicon element is quantified using the peak area after subtracting the background. Figure 2 shows an example of the Si2p silicon-0 peak obtained by XPS for the aluminum bonding wire or aluminum bonding ribbon of the present invention. The Si2p silicon-0 peak is within a quantitative range of approximately 95.0 to 101.0 eV, with the lower energy end of the peak selected between 95 and 96.5 eV and the higher energy end selected between 99.8 and 101.3 eV. The quantitative analysis of aluminum was performed using the same steps as the quantitative analysis of silicon, with the energy range (approximately 69.0 to 79.0 eV) of the peak of aluminum 0 (metallic aluminum) including Al2p being quantitatively determined. (4) Calculation of silicon concentration Using the quantitative values ​​of each element of silicon and aluminum at each depth position in the depth direction of the sample from the surface and the relative sensitivity coefficient of each element set in the XPS device, the silicon concentration (atomic %) is calculated when the total of silicon and aluminum at each depth position in the depth direction of the sample from the surface is set to 100 atomic %. Furthermore, element C, which is affected by contaminants on the sample surface, is excluded from the analysis. Then, the arithmetic mean of the silicon concentration in region a at a depth of 5 nm to 50 nm from the surface is calculated as the average concentration Ca, the arithmetic mean of the silicon concentration in region b at a depth of 800 nm to 1200 nm from the surface is calculated as the average concentration Cb, and the arithmetic mean of the silicon concentration in region f at a depth of 5 nm to 30 nm from the surface is calculated as the average concentration Cf. In the present invention, the gradient of silicon concentration in the depth direction, or the average concentration of silicon near the surface described later, is evaluated by taking the average value (arithmetic mean) of the values ​​obtained by measuring at two or more locations. From the perspective of ensuring the objectivity of the measurement data, it is preferred to obtain a plurality of samples at intervals of 50 cm or more relative to the central axis of the aluminum bonding wire or aluminum bonding strip to be measured, and to randomly select two or more samples from these plurality of samples for measurement. The average concentration Ca, average concentration Cb, and average concentration Cf are the average values ​​(arithmetic mean) of the values ​​obtained for each sample by the above steps (1) to (4). -Average concentration of silicon element near the surface- The aluminum bonding wire or aluminum bonding tape of the present invention preferably satisfies a specified silicon concentration gradient (the above-mentioned ratio Ca / Cb) when the silicon concentration (atomic %) in the depth direction from the surface of the aluminum bonding wire or aluminum bonding tape is measured by XPS. In addition, the average concentration Cf of the silicon element in the region f at a depth of 5 nm to 30 nm from the surface is not less than 0.1 atomic % and not more than 4 atomic %. By not only satisfying the specified silicon concentration gradient (the aforementioned ratio Ca / Cb) but also controlling the average silicon concentration Cf in the near-surface region f within the aforementioned range, the lifespan (number of cycles until failure) of the aluminum bonding wire or ribbon can be further improved during high-temperature temperature cycling tests. By keeping this average concentration Cf low within the aforementioned range, it is possible to achieve softening near the surface of the aluminum bonding wire, etc., promote recrystallization, improve deformability during bonding, and form a flatter bonding interface. As a result, it is believed that the lifespan of the aluminum bonding wire, etc., can be further improved during high-temperature temperature cycling tests. To further improve the lifespan of the aluminum bonding wire, etc. during high-temperature temperature cycling tests, the average silicon concentration Cf in the near-surface region f is more preferably 3.8 atomic % or less, or 3.6 atomic % or less, and more preferably 3.5 atomic % or less, 3.4 atomic % or less, 3.2 atomic % or less, or 3 atomic % or less. The lower limit of the average concentration Cf is preferably 0.1 atomic % or greater, and may be, for example, 0.12 atomic % or greater, 0.14 atomic % or greater, 0.15 atomic % or greater, 0.16 atomic % or greater, 0.18 atomic % or greater, or 0.2 atomic % or greater. The average concentration Cf of silicon in a region f near the surface is used here because this region f has a significant impact on temperature cycling reliability and life in a high-temperature temperature cycling test. The aforementioned lifetime improvement effect can be further enhanced by controlling the average silicon concentration Cf near the surface to be lower than the silicon concentration Ct throughout the aluminum bonding wire or aluminum bonding ribbon. In one embodiment, the ratio Cf / Ct of the surface silicon concentration Cf to the silicon concentration Ct throughout the aluminum bonding wire or aluminum bonding ribbon is preferably within a range of 0.03 to 0.8. The silicon concentration Ct is based on the silicon concentration in the aluminum bonding wire or aluminum bonding ribbon as measured using an ICP emission spectrometer or an ICP mass spectrometer. To achieve even better temperature cycling reliability even in high-temperature temperature cycling tests, the ratio Cf / Ct is more preferably 0.7 or less, and further preferably 0.6 or less, 0.55 or less, or 0.5 or less. Furthermore, the lower limit of the ratio Cf / Ct is preferably 0.03 or greater, and may be, for example, 0.04 or greater, 0.05 or greater, 0.06 or greater, 0.08 or greater, or 0.1 or greater. By controlling the ratio Cf / Ct within this range, deformation near the surface of the aluminum bonding wire or aluminum bonding ribbon when ultrasonic vibration or load is applied during bonding can be promoted, thereby promoting metal bonding at the bonding interface. As a result, the life of the aluminum bonding wire or aluminum bonding ribbon can be significantly improved during high-temperature temperature cycling tests. As described above, in the present invention, the depth-direction silicon concentration gradient or the silicon concentration near the surface is measured and evaluated using XPS. XPS can accurately measure silicon concentrations as low as approximately 0.1 atomic %. This allows for precise measurement and determination of whether the depth-direction silicon concentration gradient or the silicon concentration near the surface meet the required conditions. This allows for the production of aluminum bonding wires or ribbons that exhibit excellent thermal cycling reliability and high primary bonding strength during high-temperature thermal cycling tests. -Average Diameter of Silicon Phase in L Cross-Section- The aluminum bonding wire or aluminum bonding ribbon of the present invention preferably has an average diameter of the silicon phase in its L cross-section (a cross-section in the central axis direction including the central axis) of 0.8 μm to 4 μm. In the present invention, the central axis of an aluminum bonding wire, a cross-section in the central axis direction (L cross-section) containing the central axis, and a direction parallel to the central axis (RD direction) described later are shown in Figure 3. While Figure 3 illustrates an aluminum bonding wire with a circular cross-section, in the case of an aluminum bonding tape with a rectangular or substantially rectangular cross-section having a width W and a thickness T, the central axis refers to the axis passing through the center of width W and the center of thickness T. Furthermore, the L cross-section refers to a cross-section in the central axis direction containing the central axis and in the direction of thickness T (Figure 4). When cross-sectioning is performed to expose the L cross-section of an aluminum bonding wire, the cross-section may deviate from the central axis of the aluminum bonding wire. In this case, a cross-section is considered to contain the central axis if the length of the L cross-section in the direction perpendicular to the central axis is at least 90% of the wire diameter. In aluminum alloys containing high silicon concentrations of 3.0% to 20.0% by mass, silicon present in excess of its solid solubility may crystallize or precipitate as silicon particles. Coarsening of these silicon particles can cause cracks at their ends during high-temperature temperature cycling tests, leading to a decrease in fatigue resistance in the surface region of the aluminum bonding wire or ribbon. On the other hand, by controlling the average diameter of the silicon phase in the L-section to a relatively small size of 0.8 μm to 4 μm, the surface silicon particles can be utilized to improve thermal fatigue resistance. In addition to satisfying the aforementioned characteristics of containing 3.0% to 20.0% silicon by mass and maintaining a ratio (Ca / Cb) of the average silicon concentration (Ca) in region a (5 nm to 50 nm deep) to the average silicon concentration (Cb) in region b (800 nm to 1200 nm deep) within a range of 0.03 to 0.5, the silicon phases exhibited improved thermal cycling reliability in high-temperature thermal cycling tests by maintaining an average diameter of the silicon phase in the L-section within a range of 0.8 μm to 4 μm. The combination of a silicon concentration gradient from the surface to a certain depth and a small silicon phase provides a synergistic effect, resulting in control of the bonding interface and reduction of thermal strain, further enhancing thermal cycling reliability in high-temperature thermal cycling tests. Furthermore, since the linear thermal expansion coefficient of the silicon phase is lower than that of aluminum, the silicon phase present in greater amounts inside the aluminum bonding wire or the entire aluminum bonding ribbon has the effect of reducing the linear thermal expansion coefficient and improving temperature cycling reliability. From the perspective of achieving further improved temperature cycling reliability in high-temperature temperature cycling tests, the average diameter of the silicon phase in the L-section of the aluminum bonding wire or aluminum bonding ribbon of the present invention is preferably 3.8 μm or less or 3.5 μm or less, and further preferably 3.4 μm or less, 3.2 μm or less, or 3 μm or less. The lower limit is more preferably 1 μm or more, and further preferably 1.1 μm or more, and further preferably 1.2 μm or more or 1.5 μm or more. The following describes a method for measuring the average diameter of the silicon phase in the L-section of an aluminum bonding wire or aluminum bonding ribbon. The average diameter of the silicon phase in the L-section can be measured using a SEM-EDS-EBSD device. Specifically, a method can be used that combines information on aluminum and silicon concentrations obtained using SEM-EDS (Scanning Electron Microscope-Energy Dispersive X-ray Spectroscopy) with information on crystal orientation obtained using electron backscatter diffraction (EBSD). More specifically, in a measurement area using the L-section of the aluminum bonding wire or aluminum bonding ribbon as the inspection surface, aluminum and silicon concentrations are measured using EDS and crystal orientation analysis is performed using EBSD. Subsequently, the analysis software included with the device is used to separate and extract the aluminum and silicon phases from the EDS measurement results. Specifically, it is appropriate to use the Chi Scan function of the analysis software OIM Data Collection or OIM Anaysis (both are made by TSL Solution) attached to the FE-SEM (Field Emission-Scanning Electron Microscope) device. Then, for the area specifically for the silicon phase, the crystal orientation can be analyzed using the analysis software attached to the device. If the orientation difference between the measurement points is more than 15°, it is judged to be a grain boundary and the equivalent circle diameter is calculated. The average value of the equivalent circle diameters of each silicon phase is defined as the average diameter of the silicon phase. In the process of calculating the average diameter of the silicon phase, the parts where the crystal orientation cannot be measured, or even if the measurement is completed, the parts where the reliability of the orientation analysis is low are excluded for calculation. Therefore, in one embodiment, the average diameter of the silicon phase in the L-section of the aluminum bonding wire or aluminum bonding belt of the present invention is calculated by the following steps (1) to (3). (1) The L-section of the aluminum bonding wire or aluminum bonding tape is used as the inspection surface, and the concentration of aluminum and silicon is measured using EDS, and the crystal orientation is measured using EBSD. (2) The Chi Scan function is used to separate and extract aluminum and silicon. Specifically, based on the EDS measurement results of silicon, a tolerance (Tolerance) equivalent to the threshold of silicon is set, thereby separating and identifying aluminum and silicon. The crystal orientation can be analyzed using the crystal information of aluminum and silicon in the material file. (3) The crystal orientation is analyzed for the area specifically designated as the silicon phase. If the orientation difference between the measurement points is 15° or more, it is judged to be a grain boundary and the equivalent circular diameter of each grain is calculated. Then, the equivalent circular diameter of each grain is averaged to calculate the average diameter of the silicon phase.The average calculation here uses the area average (area-weighted average), which can be selected using the device's included software. This area average allows for precise measurement and determination of the average silicon phase diameter, enabling improved temperature cycling reliability during high-temperature temperature cycling tests. The area average calculation is automatically calculated by the software, averaging the value obtained by multiplying the ratio of each particle's area to the total area by the area of ​​each particle. In the present invention, only silicon phases with a diameter (equivalent circle diameter) of 0.5 μm or greater are considered when calculating the average diameter of the silicon phase in the L-section. This allows for highly accurate determination of whether the average diameter requirement for the silicon phase in the L-section has been met, enabling further improvement in temperature cycling reliability suitable for high-temperature temperature cycling tests. In step (2) above, the tolerance (%) setting can be selected within the range of 20 to 40%. In the standard analysis of the L-section of the aluminum bonding wire or aluminum bonding ribbon, it is preferably compared at approximately 30%. A supplementary explanation is provided regarding the step of adjusting the tolerance. It is preferred that the tolerance value be selected or confirmed in such a manner that the shape and size of the silicon phase extracted and identified using the Chi Scan function are equivalent to the shape and size of the silicon phase identified based on the EDS map that represents the silicon element concentration in a two-dimensional manner through EDS analysis. In the present invention, the average diameter of the silicon phase in the L-section is the average (arithmetic mean) of the values ​​measured at three or more locations. When selecting the measurement area, to ensure the objectivity of the measurement data, it is preferred to obtain the measurement sample at a distance of at least 50 cm from the aluminum bonding wire or aluminum bonding ribbon, relative to the central axis of the aluminum bonding wire or aluminum bonding ribbon, and to provide the measurement. Furthermore, in the present invention, the measurement area in the L-section using the EBSD method is ideally 300 μm or longer and less than 800 μm in length in the direction of the central axis of the aluminum bonding wire or aluminum bonding ribbon, and should include the entire aluminum bonding wire or aluminum bonding ribbon in a direction perpendicular to the central axis. However, if the aluminum bonding wire or aluminum bonding ribbon is large and measurement of the entire ribbon is difficult, the measurement area can be adjusted to less than 600 μm. Furthermore, in addition to the above-mentioned method, there are also some methods for measuring the average diameter of the silicon phase, including binarization processing of the observation image from the L cross-section. However, in the present invention, based on the reasons of determining the average diameter of the silicon phase and the orientation ratio of the crystal orientation of the aluminum phase described later in a single measurement with multiple measurement functions; enabling automatic analysis; and the relatively popularization of the equipment and analysis technology and ease of measurement, it is preferable to use a method that combines the information on the aluminum concentration and silicon concentration obtained by SEM-EDS and the information on the crystal orientation obtained by EBSD as described above. - Crystallographic Orientation of the Aluminum Phase in the L-Cross-Section - The aluminum bonding wire or aluminum bonding ribbon of the present invention preferably has an orientation ratio of the <100> crystal orientation with an angle difference of 15° or less relative to the direction parallel to the central axis (RD direction) when measuring the crystallographic orientation of the aluminum phase in its L-cross-section (hereinafter referred to as the "orientation ratio of the <100> crystal orientation of the aluminum phase in the RD direction") of preferably 15% to 50%. If the orientation ratio of the <100> crystal orientation of the aluminum phase in the RD direction is within this range, further improved initial bonding strength (first bonding strength) of the first bonding portion can be achieved. This is believed to be because when ultrasonic vibration is applied in the RD direction and the aluminum bonding wire or aluminum bonding ribbon deforms, the <100> crystal orientation, which has a low deformation resistance, is aligned in the RD direction, thereby promoting deformation of the bonding interface and metal bonding. That is, in addition to satisfying the above-mentioned characteristics of containing silicon in an amount of not less than 3.0 mass % and not more than 20.0 mass %, and having a ratio Ca / Cb of the average concentration Ca of the silicon element in region a at a depth of not less than 5 nm and not more than 50 nm from the surface to the average concentration Cb of the silicon element in region b at a depth of not less than 800 nm and not more than 1200 nm from the surface being within the range of not less than 0.03 and not more than 0.5 when the silicon concentration in the depth direction from the surface is measured by XPS, further improved first bonding strength can be achieved by making the orientation ratio of the <100> crystal orientation of the aluminum phase in the RD direction in the L cross section within the range of not less than 15% and not more than 50%. By synergistically achieving the effect of controlling the bonding interface by utilizing the gradient of silicon concentration in a region from the surface to a certain depth, and the effect of orienting the <100> crystal orientation of the aluminum phase in the RD direction, the effect of improving the first bonding strength can be further enhanced. As a result, it can also help to improve temperature cycling reliability in high-temperature temperature cycling tests. From the perspective of achieving even better first bond strength, the orientation ratio of the <100> crystal orientation in the RD direction of the aluminum phase in the L-section of the aluminum bonding wire or aluminum bonding ribbon of the present invention is more preferably 20% or greater, more preferably 22% or greater, 24% or greater, 26% or greater, or 28% or greater, and even more preferably 30% or greater or 35% or greater. From the perspective of achieving even better first bond strength, the upper limit of the orientation ratio of the <100> crystal orientation in the RD direction of the aluminum phase is more preferably 48% or less or 45% or less, more preferably 42% or less, and even more preferably 40% or less. A method for measuring the orientation ratio of the aluminum phase's crystal orientation in the L-section of an aluminum bonding wire or aluminum bonding ribbon is described. The orientation ratio of the aluminum phase's crystal orientation in the L-section can be measured using a SEM-EDS-EBSD device, similar to the measurement of the average diameter of the silicon phase described above. Specifically, a method can be used that combines information on the aluminum and silicon concentrations obtained by SEM-EDS with information on the crystal orientation obtained by EBSD. The detailed procedure is the same as that described above for measuring the average diameter of the silicon phase. Specifically, for a region specifically containing the aluminum phase, the orientation ratio of the <100> crystal orientation of the aluminum phase in the RD direction can be calculated using analysis software included with the device. The orientation ratio is calculated using a partial ratio (PR) based on the area of ​​the crystal orientations identified with a certain degree of reliability within the measurement region as the matrix. Regarding the crystal orientation of the aluminum phase, the area ratio of the <100> crystal orientation in the RD direction is set as the orientation ratio of the <100> crystal orientation in the RD direction. Therefore, in one embodiment, the orientation ratio of the crystal orientation of the aluminum phase in the L-section of the aluminum bonding wire or aluminum bonding tape of the present invention is calculated by the following steps (1) to (3). (1) In the measurement area using the L-section of the aluminum bonding wire or aluminum bonding tape as the inspection surface, the concentration of aluminum and silicon using EDS and the crystal orientation measurement using EBSD are simultaneously performed. (2) Aluminum and silicon are separated and extracted using the Chi Scan function. Specifically, based on the measurement results of EDS of silicon, a tolerance equivalent to the threshold value of silicon is set, thereby separating and identifying aluminum and silicon. The crystal orientation can be analyzed using the crystal information of aluminum and silicon in the material file. (3) Analyze the crystal orientation of the specific aluminum phase region and calculate the orientation ratio of the <100> crystal orientation of the aluminum phase in the RD direction. When measuring the orientation ratio of the crystal orientation of the aluminum phase in the L-section, the setting range of the tolerance in the above step (2), the method of obtaining the sample for measurement, or the area for measuring the crystal orientation using the EBSD method are the same as described above for the measurement of the average diameter of the silicon phase. -Addition of Strontium, Sodium, Phosphorus, and Boron- The aluminum bonding wire or aluminum bonding ribbon of the present invention may further contain one or more of strontium, sodium, phosphorus, and boron (hereinafter also referred to as the "first element group"). The total concentration of the first element group may be 0 mass ppm, preferably 1 mass ppm or greater, more preferably 3 mass ppm or greater, further preferably 5 mass ppm or greater, and particularly preferably 8 mass ppm or greater or 10 mass ppm or greater. The upper limit of the total concentration of the first element group is preferably 10,000 mass ppm or less or 8,000 mass ppm or less, more preferably 5,000 mass ppm or less or 3,000 mass ppm or less, further preferably 2,000 mass ppm or less or 1,000 mass ppm or less, and particularly preferably 900 mass ppm or less or 800 mass ppm or less. In one embodiment, the total concentration of the first element group is preferably 10 mass ppm or greater and 800 mass ppm or less. The aluminum bonding wire or aluminum bonding ribbon of the present invention further contains a total of 10 mass ppm to 800 mass ppm of one or more of strontium, sodium, phosphorus, and boron, thereby reducing the frequency of wire breakage during wire drawing. Aluminum alloys containing silicon at high concentrations of 3.0 mass % to 20.0 mass % tend to experience increased wire breakage during wire drawing. This is believed to be due to stress concentration caused by silicon phase particles that crystallize during solidification, leading to wire breakage. It is speculated that the addition of the first element group can uniformly distribute the particulate silicon phase and inhibit the growth and coarsening of the silicon phase. These effects can alleviate stress concentration during wire drawing and reduce wire breakage. From the perspective of reducing the frequency of wire breakage during wire drawing, the total concentration of the first element group in the aluminum bonding wire or aluminum bonding tape of the present invention is preferably 20 mass ppm or more, and further preferably 30 mass ppm or more, 40 mass ppm or more, or 50 mass ppm or more. The upper limit is preferably 750 mass ppm or less, more preferably 740 mass ppm or less, 720 mass ppm or less, or 700 mass ppm or less, and further preferably 680 mass ppm or less, 650 mass ppm or less, 620 mass ppm or less, or 600 mass ppm or less, and particularly preferably 580 mass ppm or less, 550 mass ppm or less, 520 mass ppm or less, or 500 mass ppm or less. When the aluminum bonding wire or aluminum bonding ribbon of the present invention contains at least one element from the first element group, it may contain any one element from the first element group, any two elements from the first element group, any three elements from the first element group, or all four elements from the first element group. Furthermore, when the aluminum bonding wire or aluminum bonding ribbon of the present invention contains at least one element from the first element group, it may also contain strontium, sodium, phosphorus, or boron. When the aluminum bonding wire or aluminum bonding ribbon of the present invention contains strontium from the first element group, the strontium concentration can be 0 mass ppm, but is preferably 1 mass ppm or higher, 3 mass ppm or higher, 5 mass ppm or higher, or 8 mass ppm or higher. Furthermore, from the perspective of reducing the frequency of wire breakage during wire drawing, the strontium concentration is more preferably 10 mass ppm or higher, and even more preferably 20 mass ppm or higher, 30 mass ppm or higher, 40 mass ppm or higher, or 50 mass ppm or higher. The upper limit of the strontium concentration is preferably 10,000 mass ppm or lower, 8,000 mass ppm or lower, 5,000 mass ppm or lower, 3,000 mass ppm or lower, 2,000 mass ppm or lower, 1,000 mass ppm or lower, or 900 mass ppm or lower. Furthermore, from the perspective of reducing the frequency of wire breakage during wire drawing, the strontium concentration is preferably 800 mass ppm or less, and further preferably 750 mass ppm or less, 740 mass ppm or less, 720 mass ppm or less, 700 mass ppm or less, 680 mass ppm or less, 650 mass ppm or less, 620 mass ppm or less, 600 mass ppm or less, 580 mass ppm or less, 550 mass ppm or less, 520 mass ppm or less, or 500 mass ppm or less. When the aluminum bonding wire or aluminum bonding ribbon of the present invention contains sodium from the first element group, the sodium concentration may be 0 mass ppm, but is preferably 1 mass ppm or higher, 3 mass ppm or higher, 5 mass ppm or higher, or 8 mass ppm or higher. Furthermore, from the perspective of reducing the frequency of wire breakage during wire drawing, the sodium concentration is more preferably 10 mass ppm or higher, and even more preferably 20 mass ppm or higher, 30 mass ppm or higher, 40 mass ppm or higher, or 50 mass ppm or higher. The upper limit of the sodium concentration is preferably 10,000 mass ppm or lower, 8,000 mass ppm or lower, 5,000 mass ppm or lower, 3,000 mass ppm or lower, 2,000 mass ppm or lower, 1,000 mass ppm or lower, or 900 mass ppm or lower. Furthermore, from the perspective of reducing the frequency of wire breakage during wire drawing, the sodium concentration is preferably 800 mass ppm or less, and further preferably 750 mass ppm or less, 740 mass ppm or less, 720 mass ppm or less, 700 mass ppm or less, 680 mass ppm or less, 650 mass ppm or less, 620 mass ppm or less, 600 mass ppm or less, 580 mass ppm or less, 550 mass ppm or less, 520 mass ppm or less, or 500 mass ppm or less. When the aluminum bonding wire or aluminum bonding ribbon of the present invention contains phosphorus from the first element group, the phosphorus concentration may be 0 mass ppm, but is preferably 1 mass ppm or higher, 3 mass ppm or higher, 5 mass ppm or higher, or 8 mass ppm or higher. Furthermore, from the perspective of reducing the frequency of wire breakage during wire drawing, the nickel concentration is more preferably 10 mass ppm or higher, and even more preferably 20 mass ppm or higher, 30 mass ppm or higher, 40 mass ppm or higher, or 50 mass ppm or higher. The upper limit of the phosphorus concentration is preferably 10,000 mass ppm or lower, 8,000 mass ppm or lower, 5,000 mass ppm or lower, 3,000 mass ppm or lower, 2,000 mass ppm or lower, 1,000 mass ppm or lower, or 900 mass ppm or lower. Furthermore, from the perspective of reducing the frequency of wire breakage during wire drawing, the phosphorus concentration is preferably 800 mass ppm or less, and further preferably 750 mass ppm or less, 740 mass ppm or less, 720 mass ppm or less, 700 mass ppm or less, 680 mass ppm or less, 650 mass ppm or less, 620 mass ppm or less, 600 mass ppm or less, 580 mass ppm or less, 550 mass ppm or less, 520 mass ppm or less, or 500 mass ppm or less. When the aluminum bonding wire or aluminum bonding ribbon of the present invention contains boron from the first element group, the boron concentration can be 0 mass ppm, but is preferably 1 mass ppm or higher, 3 mass ppm or higher, 5 mass ppm or higher, or 8 mass ppm or higher. Furthermore, from the perspective of reducing the frequency of wire breakage during wire drawing, the boron concentration is more preferably 10 mass ppm or higher, and even more preferably 20 mass ppm or higher, 30 mass ppm or higher, 40 mass ppm or higher, or 50 mass ppm or higher. The upper limit of the boron concentration is preferably 10,000 mass ppm or lower, 8,000 mass ppm or lower, 5,000 mass ppm or lower, 3,000 mass ppm or lower, 2,000 mass ppm or lower, 1,000 mass ppm or lower, or 900 mass ppm or lower. Furthermore, from the perspective of reducing the frequency of wire breakage during wire drawing, the boron concentration is preferably 800 mass ppm or less, and further preferably 750 mass ppm or less, 740 mass ppm or less, 720 mass ppm or less, 700 mass ppm or less, 680 mass ppm or less, 650 mass ppm or less, 620 mass ppm or less, 600 mass ppm or less, 580 mass ppm or less, 550 mass ppm or less, 520 mass ppm or less, or 500 mass ppm or less. - Addition of Nickel, Titanium, Iron, Zinc, and Magnesium - The aluminum bonding wire or aluminum bonding ribbon of the present invention may further contain one or more of nickel, titanium, iron, zinc, and magnesium (hereinafter also referred to as the "second element group"). The total concentration of the second element group may be 0 mass ppm, preferably 1 mass ppm or more or 3 mass ppm or more, more preferably 5 mass ppm or more or 8 mass ppm or more, further preferably 10 mass ppm or more or 30 mass ppm or more, and particularly preferably 50 mass ppm or more, 80 mass ppm or more, or 100 mass ppm or more. The upper limit of the total concentration of the second element group is preferably 10,000 mass ppm or less, more preferably 8,000 mass ppm or less, further preferably 5,000 mass ppm or less, and particularly preferably 3,000 mass ppm or less or 2,000 mass ppm or less. In one embodiment, the total concentration of the second element group is preferably 100 mass ppm or more and 2,000 mass ppm or less. The aluminum bonding wire or ribbon of the present invention further contains a total of 100 to 2000 mass ppm of one or more of nickel, titanium, iron, zinc, and magnesium. This prevents surface damage and scratches on the wire or ribbon, resulting in a smooth surface. Aluminum alloys containing high concentrations of silicon (3.0 to 20.0 mass%) can cause surface damage and scratches during wire drawing due to surface hardening or shedding of silicon phases and aluminum oxides on the surface, resulting in significant surface irregularities in the wire or ribbon. It is speculated that the addition of the second element group stabilizes the aluminum oxide on the wire or ribbon surface, refines the aluminum grain structure, and hardens it, thereby reducing damage and scratches during wire drawing. It is believed that by setting a predetermined gradient in silicon concentration from the surface to a certain depth and adding the second element group, the effect of suppressing damage and scratches on the surface of the aluminum bonding wire or aluminum bonding ribbon can be enhanced to form a smooth surface. From the perspective of suppressing the occurrence of surface damage and scratches and forming an aluminum bonding wire or aluminum bonding tape with a smooth surface, the total concentration of the second element group in the aluminum bonding wire or aluminum bonding tape of the present invention is preferably 150 mass ppm or more, further preferably 200 mass ppm or more, 250 mass ppm or more, or 300 mass ppm or more, and the upper limit is preferably 1800 mass ppm or less, more preferably 1600 mass ppm or less, 1500 mass ppm or less, or 1200 mass ppm or less, further preferably 1000 mass ppm or less, 900 mass ppm or less, or 800 mass ppm or less, and particularly preferably 700 mass ppm or less, 600 mass ppm or less, or 500 mass ppm or less. When the aluminum bonding wire or aluminum bonding ribbon of the present invention contains at least one element from the second element group, it may contain any one element from the second element group, any two elements from the second element group, any three elements from the second element group, any four elements from the second element group, or all five elements from the second element group. Furthermore, when the aluminum bonding wire or aluminum bonding ribbon of the present invention contains at least one element from the second element group, it may also contain nickel, titanium, iron, zinc, or magnesium. When the aluminum bonding wire or aluminum bonding ribbon of the present invention contains nickel from the second element group, the nickel concentration may be 0 mass ppm, but is preferably 1 mass ppm or higher, 3 mass ppm or higher, 5 mass ppm or higher, 8 mass ppm or higher, 10 mass ppm or higher, 30 mass ppm or higher, 50 mass ppm or higher, or 80 mass ppm or higher. Furthermore, from the perspective of suppressing surface damage and scratches, thereby forming an aluminum bonding wire or aluminum bonding ribbon with a smooth surface, the nickel concentration is more preferably 100 mass ppm or higher, and even more preferably 150 mass ppm or higher, 200 mass ppm or higher, 250 mass ppm or higher, or 300 mass ppm. The upper limit of the nickel concentration is preferably 10,000 mass ppm or lower, 8,000 mass ppm or lower, 5,000 mass ppm or lower, or 3,000 mass ppm or lower. Furthermore, from the perspective of suppressing surface damage and scratches to form an aluminum bonding wire or aluminum bonding tape with a smooth surface, the nickel concentration is preferably 2000 mass ppm or less, and further preferably 1800 mass ppm or less, 1600 mass ppm or less, 1500 mass ppm or less, 1200 mass ppm or less, 1000 mass ppm or less, 900 mass ppm or less, 800 mass ppm or less, 700 mass ppm or less, 600 mass ppm or less, or 500 mass ppm or less. When the aluminum bonding wire or aluminum bonding ribbon of the present invention contains titanium from the second element group, the titanium concentration may be 0 mass ppm, but is preferably 1 mass ppm or higher, 3 mass ppm or higher, 5 mass ppm or higher, 8 mass ppm or higher, 10 mass ppm or higher, 30 mass ppm or higher, 50 mass ppm or higher, or 80 mass ppm or higher. Furthermore, from the perspective of suppressing surface damage and scratches, thereby forming an aluminum bonding wire or aluminum bonding ribbon with a smooth surface, the titanium concentration is more preferably 100 mass ppm or higher, and even more preferably 150 mass ppm or higher, 200 mass ppm or higher, 250 mass ppm or higher, or 300 mass ppm. The upper limit of the titanium concentration is preferably 10,000 mass ppm or lower, 8,000 mass ppm or lower, 5,000 mass ppm or lower, or 3,000 mass ppm or lower. Furthermore, from the perspective of suppressing surface damage and scratches to form an aluminum bonding wire or aluminum bonding ribbon with a smooth surface, the titanium concentration is preferably 2000 mass ppm or less, and further preferably 1800 mass ppm or less, 1600 mass ppm or less, 1500 mass ppm or less, 1200 mass ppm or less, 1000 mass ppm or less, 900 mass ppm or less, 800 mass ppm or less, 700 mass ppm or less, 600 mass ppm or less, or 500 mass ppm or less. When the aluminum bonding wire or aluminum bonding ribbon of the present invention contains iron from the second element group, the iron concentration may be 0 mass ppm, but is preferably 1 mass ppm or higher, 3 mass ppm or higher, 5 mass ppm or higher, 8 mass ppm or higher, 10 mass ppm or higher, 30 mass ppm or higher, 50 mass ppm or higher, or 80 mass ppm or higher. Furthermore, from the perspective of suppressing surface damage and scratches, thereby forming an aluminum bonding wire or aluminum bonding ribbon with a smooth surface, the iron concentration is more preferably 100 mass ppm or higher, and even more preferably 150 mass ppm or higher, 200 mass ppm or higher, 250 mass ppm or higher, or 300 mass ppm. The upper limit of the iron concentration is preferably 10,000 mass ppm or lower, 8,000 mass ppm or lower, 5,000 mass ppm or lower, or 3,000 mass ppm or lower. Furthermore, from the perspective of suppressing the occurrence of surface damage and scratches and forming an aluminum bonding wire or aluminum bonding tape with a smooth surface, the iron concentration is preferably 2000 mass ppm or less, and further preferably 1800 mass ppm or less, 1600 mass ppm or less, 1500 mass ppm or less, 1200 mass ppm or less, 1000 mass ppm or less, 900 mass ppm or less, 800 mass ppm or less, 700 mass ppm or less, 600 mass ppm or less, or 500 mass ppm or less. When the aluminum bonding wire or aluminum bonding ribbon of the present invention contains zinc from the second element group, the zinc concentration may be 0 mass ppm, but is preferably 1 mass ppm or higher, 3 mass ppm or higher, 5 mass ppm or higher, 8 mass ppm or higher, 10 mass ppm or higher, 30 mass ppm or higher, 50 mass ppm or higher, or 80 mass ppm or higher. Furthermore, from the perspective of suppressing surface damage and scratches, thereby forming an aluminum bonding wire or aluminum bonding ribbon with a smooth surface, the zinc concentration is more preferably 100 mass ppm or higher, and even more preferably 150 mass ppm or higher, 200 mass ppm or higher, 250 mass ppm or higher, or 300 mass ppm. The upper limit of the zinc concentration is preferably 10,000 mass ppm or lower, 8,000 mass ppm or lower, 5,000 mass ppm or lower, or 3,000 mass ppm or lower. Furthermore, from the viewpoint of suppressing the occurrence of surface damage and scratches and forming an aluminum bonding wire or aluminum bonding ribbon with a smooth surface, the zinc concentration is more preferably 2000 mass ppm or less, and further preferably 1800 mass ppm or less, 1600 mass ppm or less, 1500 mass ppm or less, 1200 mass ppm or less, 1000 mass ppm or less, 900 mass ppm or less, 800 mass ppm or less, 700 mass ppm or less, 600 mass ppm or less, or 500 mass ppm or less. When the aluminum bonding wire or aluminum bonding ribbon of the present invention contains magnesium from the second element group, the magnesium concentration may be 0 mass ppm, but is preferably 1 mass ppm or higher, 3 mass ppm or higher, 5 mass ppm or higher, 8 mass ppm or higher, 10 mass ppm or higher, 30 mass ppm or higher, 50 mass ppm or higher, or 80 mass ppm or higher. Furthermore, from the perspective of suppressing surface damage and scratches, thereby forming an aluminum bonding wire or aluminum bonding ribbon with a smooth surface, the magnesium concentration is more preferably 100 mass ppm or higher, and even more preferably 150 mass ppm or higher, 200 mass ppm or higher, 250 mass ppm or higher, or 300 mass ppm. The upper limit of the magnesium concentration is preferably 10,000 mass ppm or lower, 8,000 mass ppm or lower, 5,000 mass ppm or lower, or 3,000 mass ppm or lower. Furthermore, from the viewpoint of suppressing the occurrence of surface damage and scratches and forming an aluminum bonding wire or aluminum bonding ribbon with a smooth surface, the magnesium concentration is more preferably 2000 mass ppm or less, and further preferably 1800 mass ppm or less, 1600 mass ppm or less, 1500 mass ppm or less, 1200 mass ppm or less, 1000 mass ppm or less, 900 mass ppm or less, 800 mass ppm or less, 700 mass ppm or less, 600 mass ppm or less, or 500 mass ppm or less. When manufacturing the aluminum bonding wire or aluminum bonding ribbon of the present invention, aluminum with a purity of 4N (aluminum: 99.99% by mass or greater) is preferably used as the aluminum raw material. More preferably, aluminum with a purity of 5N (aluminum: 99.999% by mass or greater) is used, as it contains even fewer impurities. Furthermore, in one embodiment, aluminum with a purity of 3N (aluminum: 99.9% by mass or greater) can also be used. The aluminum bonding wire or ribbon of the present invention may further contain elements other than aluminum, silicon, the first element group, and the second element group (hereinafter referred to as "other elements"), within a range that does not hinder the effects of the present invention. Specifically, "other elements" refer to elements other than aluminum, silicon, strontium, sodium, phosphorus, boron, nickel, titanium, iron, zinc, and magnesium. The aluminum bonding wire or ribbon of the present invention may further contain elements other than aluminum, silicon, strontium, sodium, phosphorus, boron, nickel, titanium, iron, zinc, and magnesium. The total concentration of other elements in the aluminum bonding wire or ribbon is not particularly limited, as long as it does not hinder the effects of the present invention. The total concentration of the other elements may be, for example, 0.5 mass % or less, 0.4 mass % or less, 0.3 mass % or less, 0.2 mass % or less, 0.15 mass % or less, 0.1 mass % or less, 0.08 mass % or less, 0.06 mass % or less, 0.05 mass % or less, 0.04 mass % or less, 0.03 mass % or less, 0.025 mass % or less, 0.02 mass % or less, 0.018 mass % or less, 0.016 mass % or less, 0.015 mass % or less, 0.014 mass % or less, 0.012 mass % or less, or 0.01 mass %. The lower limit of the total concentration of the other elements is not particularly limited and may be 0 mass %. In one embodiment, the remainder of the aluminum bonding wire or ribbon of the present invention comprises aluminum and other elements. Thus, in one preferred embodiment, the aluminum bonding wire or ribbon of the present invention comprises aluminum, silicon, and other elements. In another preferred embodiment, the aluminum bonding wire or ribbon of the present invention comprises aluminum, silicon, one or more elements from the first element group, and other elements. In yet another preferred embodiment, the aluminum bonding wire or ribbon of the present invention comprises aluminum, silicon, one or more elements from the second element group, and other elements. In yet another preferred embodiment, the aluminum bonding wire or ribbon of the present invention comprises aluminum, silicon, one or more elements from the first element group, one or more elements from the second element group, and other elements. In one embodiment, the remainder of the aluminum bonding wire or aluminum bonding ribbon of the present invention comprises aluminum and inevitable impurities. Therefore, in a suitable embodiment, the aluminum bonding wire or aluminum bonding ribbon of the present invention comprises aluminum, silicon, and inevitable impurities. In another suitable embodiment, the aluminum bonding wire or aluminum bonding ribbon of the present invention comprises aluminum, silicon, one or more elements of the first element group, and inevitable impurities. In yet another suitable embodiment, the aluminum bonding wire or aluminum bonding ribbon of the present invention comprises aluminum, silicon, one or more elements of the second element group, and inevitable impurities. In yet another suitable embodiment, the aluminum bonding wire or aluminum bonding ribbon of the present invention comprises aluminum, silicon, one or more elements of the first element group, one or more elements of the second element group, and inevitable impurities. In one preferred embodiment, the aluminum bonding wire or ribbon of the present invention does not have a coating primarily composed of a metal other than aluminum on the outer periphery of the aluminum bonding wire or ribbon. Here, "a coating primarily composed of a metal other than aluminum" refers to a coating containing a metal other than aluminum at a content of 50% by mass or greater. The aluminum bonding wire or aluminum bonding tape of the present invention can be an aluminum bonding wire or an aluminum bonding tape. In the case of the aluminum bonding wire of the present invention, the wire diameter is not particularly limited, and can be, for example, 50 μm or more, 60 μm or more, 80 μm or more, 100 μm or more, 120 μm or more, 140 μm or more, 150 μm or more, 180 μm or more, or 200 μm or more. The upper limit of the wire diameter is not particularly limited, and can be, for example, 600 μm or less, 550 μm or less, 500 μm or less, 450 μm or less, or 400 μm or less. In one embodiment, the wire diameter of the aluminum bonding wire of the present invention can be in the range of 100 to 600 μm, preferably in the range of 200 to 400 μm. In the case of an aluminum bonding tape of the present invention, the size of its rectangular or substantially rectangular cross section (width W×thickness T) is not particularly limited. For example, W may be 100-3000 μm, and T may be 50-600 μm. The aluminum bonding wire or ribbon of the present invention exhibits excellent temperature cycling reliability even in high-temperature temperature cycling tests. Therefore, the aluminum bonding wire or ribbon of the present invention is suitable for use as an aluminum bonding wire or ribbon for semiconductor devices. The aluminum bonding wire or ribbon of the present invention is particularly suitable for use as an aluminum bonding wire or ribbon for power semiconductor devices, and is even more suitable for use as an aluminum bonding wire or ribbon for next-generation power semiconductor devices such as silicon carbide power semiconductor devices. -Method for Manufacturing Aluminum Bonding Wire or Aluminum Bonding Ribbon- An example of a method for manufacturing an aluminum bonding wire or an aluminum bonding ribbon according to the present invention will be described. Hereinafter, the manufacturing of an aluminum bonding wire will be described as an example. Aluminum and alloying elements used as raw materials are preferably of high purity. Aluminum preferably has a purity of 99.5% by mass or greater, with the remainder consisting of unavoidable impurities, more preferably 99.9% by mass or greater, and even more preferably 99.99% by mass or greater. Silicon, the first group of elements, the second group of elements, and other elements used as alloying elements preferably have a purity of 99.9% by mass or greater, with the remainder consisting of unavoidable impurities, more preferably 99.99% by mass or greater. Aluminum alloys used for aluminum bonding wire can be manufactured by placing aluminum and alloying element raw materials into a graphite or alumina crucible processed to obtain a cylindrical ingot, and then melting the raw materials in an electric furnace or high-frequency heating furnace. The diameter of the cylindrical ingot is preferably set to 6 mm or greater and less than 8 mm to consider workability in subsequent processing steps. The atmosphere within the furnace during melting is preferably an inert or reducing atmosphere to prevent excessive oxidation of the aluminum or silicon, the first group of elements, the second group of elements, and other elements that constitute the wire. The maximum temperature limit of the melt during melting is preferably set to a range of 700°C or greater and less than 1050°C to ensure melt fluidity and facilitate control of the size of the silicon phase during solidification. Cooling methods during solidification include water cooling, furnace cooling, and air cooling. The cylindrical ingot obtained by melting is subjected to a solution treatment at high temperature, followed by repeated wire drawing using an eye die to produce wire of the desired diameter. The drawn wire undergoes a final heat treatment in an electric furnace and can be used as aluminum bonding wire. <Controlling the Silicon Concentration Gradient> To control the silicon concentration gradient from the surface to a predetermined depth, it is effective to control the wire feed speed (drawing speed) during the wire drawing process, the eye die area reduction ratio, the lubricity at the wire-eye die interface, and the intermediate heat treatment atmosphere. An example of manufacturing conditions for establishing a predetermined silicon concentration gradient in the depth direction from the surface to a predetermined depth (i.e., controlling the aforementioned ratio Ca / Cb within a range of 0.03 to 0.5) is shown below. -Wire Feed Speed- To promote the concentration gradient, it is effective to assist surface deformation by controlling the wire feed speed at a high speed according to the wire diameter being drawn. Specifically, it is preferable to set the average wire drawing speed from a wire diameter that is half the initial wire drawing diameter to the final wire diameter to be at least 20 m / min and less than 50 m / min. -Eye die reduction rate- Regarding the eye die reduction rate of wire drawing processing, in order to control the concentration gradient, it is effective to draw the wire with a high reduction rate for thick diameters and a low reduction rate for thin diameters. As a specific example, it is better to set the eye die reduction rate from the wire diameter at the beginning of wire drawing processing to 1 / 2 of the wire diameter to a range of 20% or more and less than 40%, and set the eye die reduction rate from 1 / 2 of the wire diameter to the final wire diameter to a range of 10% or more and less than 25%. Here, if the wire reduction rate of each eye die is set to P1, P1 is expressed by the following formula. P1={(R 2 2 -R 1 2 ) / R 2 2}×100 Where, R 2 represents the diameter of the wire before processing (mm), R 1 represents the diameter of the wire after processing (mm). Lubricity: By improving the lubricity of the interface between the wire and the eye mold during wire drawing, deformation of the surface elongation in the wire drawing direction is promoted, which can assist in creating a concentration gradient on the surface. Lubricants used in wire drawing are preferably aqueous and contain surfactants that reduce the coefficient of friction. -Atmosphere of intermediate heat treatment- In order to control the concentration gradient of the surface area, it is effective to also adjust the atmosphere of the intermediate heat treatment. The intermediate heat treatment is a heat treatment performed during the process of wire drawing from the ingot to the final wire diameter. It is preferred to conduct the intermediate heat treatment in nitrogen (N 2) In an atmosphere of inert gas, the oxidation of silicon in the aluminum during the wire drawing process can be controlled, and the silicon concentration near the surface can be kept low. <Control of the Average Silicon Phase Diameter> To adjust the average silicon phase diameter in the L-section to a range of 0.8 μm to 4.0 μm, it is effective to adjust the melting temperature during ingot production to between 800°C and 1050°C, the casting temperature to between 700°C and 780°C, and the solution treatment temperature to between 450°C and 550°C, with the solution treatment time to between 1 hour and 6 hours. The casting temperature is the temperature at which the molten melt is poured into a mold, etc., and corresponds to the solidification start temperature. Higher casting temperatures tend to coarsen and columnarize the crystallized silicon phase during solidification, increasing the average silicon phase diameter. Higher solution treatment temperatures tend to fragment and granulate the columnar silicon phase, reducing the average silicon phase diameter. In order to further reduce the average diameter of the silicon phase, it is effective to increase the cooling rate during solidification, for example, water cooling is also effective. <Control of the <100> Crystallographic Orientation Ratio of the Aluminum Phase in the RD Direction> To adjust the <100> crystallographic orientation ratio of the aluminum phase in the RD direction in the L-section to a range of 15% to 50%, it is effective to adjust the conditions of the intermediate heat treatment. It is effective to set the intermediate heat treatment temperature range to 250°C to less than 400°C, and the duration to 1 hour to less than 48 hours. The number of intermediate heat treatments is ideally between 2 and 4. It is preferred to perform at least one intermediate heat treatment within a range of 4.0 to 5.5 times the final wire diameter, and at least one intermediate heat treatment within a range of 2.0 to 3.5 times the final wire diameter. By performing the intermediate heat treatment under these conditions, the processing strain in the aluminum phase is reduced, causing mild recrystallization. This makes it easier to reduce the processed structure of the aluminum phase at the final wire diameter, thereby increasing the degree of recrystallization of the aluminum phase in the subsequent heat treatment, or promoting the rotation of the crystal orientation and adjusting the orientation ratio of the <100> crystal orientation of the aluminum phase in the RD direction. On the other hand, if the intermediate heat treatment temperature is set below 250°C and above 400°C, there is a concern that the orientation ratio of the <100> crystal orientation of the aluminum phase in the RD direction will become unstable. The effective final heat treatment conditions are a temperature range of 200°C to less than 360°C, and a duration of 2 hours to less than 24 hours. While the final heat treatment promotes the recovery and recrystallization of the aluminum phase, the amount of silicon dissolved in the aluminum phase varies with the heat treatment temperature, causing variations in the recrystallization temperature. By regulating the progress of recrystallization during the final heat treatment, the orientation of the crystal orientations can be easily controlled. The above description uses the production of aluminum bonding wire as a representative example. Aluminum bonding tape, as a strip material, can also be produced using essentially the same steps. The heat treatment temperature and time conditions described above can be used. Furthermore, when producing aluminum bonding tape by rolling, the reduction ratio of the eye die can be adjusted by replacing it with the rolling reduction ratio. [Semiconductor Device] A semiconductor device can be manufactured by connecting electrodes on a semiconductor wafer to external electrodes on a lead frame or substrate using the aluminum bonding wire or aluminum bonding ribbon of the present invention. Specifically, the semiconductor device of the present invention includes the aluminum bonding wire or aluminum bonding ribbon of the present invention. As described above, both the first bond to the electrode on the semiconductor wafer and the second bond to the electrode on the lead frame or substrate can be made using wedge bonding. In one embodiment, the semiconductor device of the present invention is characterized by including a circuit substrate, a semiconductor chip, and an aluminum bonding wire or aluminum bonding ribbon for conducting electricity between the circuit substrate and the semiconductor chip, and the aluminum bonding wire or aluminum bonding ribbon is the aluminum bonding wire or aluminum bonding ribbon of the present invention. In the semiconductor device of the present invention, the circuit substrate and semiconductor wafer are not particularly limited, and any known circuit substrate and semiconductor wafer that can be used to construct a semiconductor device can be used. Alternatively, a lead frame can be used in place of the circuit substrate. For example, as in the semiconductor device described in Japanese Patent Application Laid-Open No. 2020-150116, a semiconductor device can be constructed that includes a lead frame and a semiconductor wafer mounted on the lead frame. Examples of semiconductor devices include various semiconductor devices used in electrical products (e.g., computers, mobile phones, digital cameras, televisions, air conditioners, solar power generation systems, etc.) and vehicles (e.g., motorcycles, cars, trains, ships, and airplanes, etc.), among which power semiconductor devices (power semiconductor devices) are particularly preferred. [Examples] The present invention will be described in detail below with reference to Examples. However, the present invention is not limited to the following Examples. [Sample] The sample production method is described. Aluminum used as the raw material has a purity of 4N (99.99% by mass or higher), with the remainder consisting of unavoidable impurities. Silicon, the first group of elements (strontium, sodium, phosphorus, and boron), the second group of elements (nickel, titanium, iron, zinc, and magnesium), and other elements used as alloying elements have a purity of 99.99% by mass or higher, with the remainder consisting of unavoidable impurities. The aluminum alloy used for aluminum bonding wire or aluminum bonding ribbon is produced by melting aluminum and alloying element raw materials in an alumina crucible using a high-frequency heating furnace. The furnace atmosphere during melting is argon, the maximum temperature limit of the melt during melting is set to be above 700°C and below 1050°C, and the casting temperature is set to be above 700°C and below 780°C. Cooling during solidification is performed using either air cooling in the atmosphere or water cooling in water. A Φ6 mm cylindrical ingot is obtained by melting. After solution treatment and homogenization treatment, the ingot is subjected to wire drawing using an eye die and intermediate heat treatment to produce a Φ300 μm aluminum bonding wire. In addition, using the Φ300 μm aluminum bonding wire as the starting material, an aluminum bonding strip with a thickness of 100 μm and a width of 600 μm is produced by two-stage roller rolling. The temperature range of the solution treatment is set to be above 450°C and below 550°C, and the time is set to be above 1 hour and below 6 hours. Homogenization treatment is continuously performed during cooling after the solution treatment. The cooling method after the homogenization treatment adopts air cooling in the atmosphere. The number of intermediate heat treatments is carried out in the range of 2 to 4 times. The intermediate heat treatment is carried out at least once in the range of 4.0 to 5.5 times the final wire diameter, and at least once in the range of 2.0 to 3.5 times the final wire diameter. The intermediate heat treatment temperature range is set to be above 250°C and below 400°C, and the time is set to be above 1 hour and below 48 hours. In addition, the intermediate heat treatment is carried out in nitrogen (N 2) Implement under atmosphere. During wire drawing, use a commercially available lubricant (a water-based lubricant containing a surfactant that reduces the coefficient of friction). The wire reduction rate for each eye during wire drawing should be set at a range of 20% or more and less than 40% from the start of wire drawing to a wire diameter of 3 mm. The reduction rate from a wire diameter of 3 mm to the final wire diameter should be set at a range of 10% or more and less than 25%. Furthermore, the wire feed speed during wire drawing should be set at an average of 20 m / min or more and less than 50 m / min from a wire diameter of 3 mm to the final wire diameter. The temperature range of the final heat treatment is set to be greater than 200° C. and less than 360° C., and the time is set to be greater than 2 hours and less than 24 hours. <Measurement Method of Silicon Concentration by X-ray Photoelectron Spectroscopy (XPS)> (1) Preparation of Measurement Sample: A sample of aluminum bonding wire or aluminum bonding tape to be measured is placed on a sample stage. At this time, the position of the aluminum bonding wire or aluminum bonding tape sample is adjusted on the operation screen of the XPS apparatus so that the length direction of the sample becomes the width direction. In the case where the sample is an aluminum bonding tape (having a rectangular cross-sectional shape with a width W of 600 μm and a thickness T of 100 μm), the width W direction is parallel to the surface of the sample stage, and the thickness T direction is perpendicular to the surface of the sample stage. (2) Measurement by XPS In the measurement by XPS, the measurement area is selected by observing the SXI (Scanning X-ray Image) screen of the device, and the vicinity of the top of the aluminum bonding wire or aluminum bonding tape sample becomes the measurement area. Then, under the following conditions, the depth direction of the aluminum bonding wire sample is measured by XPS, and the Si2p and Al2p spectra are detected. The peaks of the Si2p and Al2p spectra are detected at energies of approximately 98.5 to 99.5 eV and 71.5 to 73.0 eV, respectively. ・Measurement device: Versa Probe3 manufactured by ULVAC-PHI ・Ultimate vacuum degree: approximately 1×10 -8 Torr ・X-ray source: Monochromated aluminum (1486.6 eV) ・Measurement area: 100 μm (sample length direction) × 20 μm (sample circumference direction) square ・Photoelectron extraction angle: 45 degrees ・Detection depth: Several nm ・Argon gas sputtering acceleration voltage: 2 kV Sputtering area: 2 × 2 mm square Sputtering rate: 9.2 nm / min (silicon dioxide equivalent) ・Analysis pitch in the depth direction: 5 nm pitch (depth from the surface: 0 to 50 nm), 10 nm pitch (depth from the surface: 50 to 200 nm), 20 nm pitch (depth from the surface: more than 200 nm) (3) Quantification of each element of silicon and aluminum Based on the detection spectrum of Si2p and Al2p obtained at each depth position in the depth direction from the surface of the sample, the quantification of each element of silicon and aluminum was performed by the following steps. Specifically, the quantification of silicon element was performed for the quantification range (approximately 95.0 to 101.0 eV) of the peak energy containing Si2p (metallic silicon). The energy values ​​of the low energy end and the high energy end were adjusted within the above-mentioned quantification range according to the shape of the above-mentioned peak, etc. The background of the quantification range was determined using the Shirley method, and the quantification of silicon element was performed using the peak area after subtracting the background. The quantitative analysis of aluminum element was performed by the same steps as the quantification of silicon element, for the quantification range (approximately 69.0 to 79.0 eV) of the peak energy containing Al2p (metallic aluminum). (4) Calculation of Silicon Concentration Using the quantitative values ​​of each element of silicon and aluminum at each depth position in the depth direction of the sample from the surface and the relative sensitivity coefficient of each element set in the XPS device, the silicon concentration is calculated when the total of metallic silicon and metallic aluminum at each depth position in the depth direction of the sample from the surface is set to 100 atomic %. Then, the arithmetic mean of the silicon concentration in region a with a depth of 5 nm to 50 nm from the surface is calculated as the average concentration Ca, the arithmetic mean of the silicon concentration in region b with a depth of 800 nm to 1200 nm from the surface is calculated as the average concentration Cb, and the arithmetic mean of the silicon concentration in region f with a depth of 5 nm to 30 nm from the surface is calculated as the average concentration Cf. In measuring the silicon concentration, multiple samples are taken from the aluminum bonding wire or aluminum bonding ribbon to be measured at intervals of 50 cm or more relative to the central axis of the wire or ribbon. Two samples are randomly selected from the multiple samples. The average concentration Ca, the average concentration Cb, and the average concentration Cf are the average (arithmetic mean) of the values ​​obtained for the two samples through the above steps (1) to (4). <Element Content Measurement Method> Analysis of element concentrations in aluminum bonding wire or ribbon is performed using an ICP-OES (Inductively Coupled Plasma-Optical Emission Spectrometer) (Hitachi High-Tech Science Co., Ltd., "PS3520UVDDII") or an ICP-MS (Inductively Coupled Plasma-Mass Spectrometer) (Agilent Technologies Co., Ltd., "Agilent 7700x ICP-MS") as an analytical instrument. This measurement determines the concentration (in parts per million by mass) of each element in the entire aluminum bonding wire or ribbon. <Method for Measuring the Orientation Ratio of the Crystalline Orientation of the Aluminum Phase> The crystallographic orientation of the aluminum phase was measured using an L-section (a section in the central axis direction including the central axis) of an aluminum bonding wire or aluminum bonding ribbon as an inspection surface. The measurements were performed using a FE-SEM (SU-70, manufactured by Hitachi High-Technologies Corporation) and TSL Solutions' APEX (for data acquisition), OIM Data Collection (for Chi Scan), and OIM Anaysis (for data analysis). Three measurement areas were randomly selected at intervals of at least 50 cm relative to the central axis of the aluminum bonding wire or ribbon, and measurements were performed on these three areas. The measurement area was defined as being at least 300 μm and less than 800 μm in the direction of the central axis of the aluminum bonding wire or ribbon, and encompassing the entire aluminum bonding wire or ribbon perpendicular to the central axis. The key conditions for EDS and EBSD measurements were an acceleration voltage of 15 kV, a measurement magnification of 350x, a scanning speed of 30 to 120 points / second, and a measurement interval of 0.1 to 0.3 μm. While faster scanning speeds can shorten measurement time, there is a concern that EDS measurement accuracy may be reduced. Ideally, a scanning speed within the above range should be selected. In the measurement of the orientation ratio of the crystal orientation of the aluminum phase in the L-section of an aluminum bonding wire or an aluminum bonding ribbon, the following method is used, namely, using an SEM-EDS-EBSD device and combining the information on the aluminum concentration and silicon concentration obtained by SEM-EDS with the information on the crystal orientation obtained by EBSD. More specifically, the measurement is carried out according to the following steps (1) to (3). (1) In the measurement area using the L-section of the aluminum bonding wire or the aluminum bonding ribbon as the inspection surface, the concentration of aluminum and silicon using EDS and the crystal orientation measurement using EBSD are simultaneously performed. (2) Aluminum and silicon are separated and extracted using the Chi Scan function of the EBSD analysis software. Specifically, based on the measurement results of the EDS of silicon, a tolerance equivalent to the threshold value of silicon is set to separate and identify aluminum and silicon. The crystal information of aluminum and silicon in the material file is used for analyzing the crystal orientation. Here, the tolerance condition is mainly set to 30% and adjusted as needed. (3) For the area specifically containing the aluminum phase, the crystal orientation is analyzed and the orientation ratio of the <100> crystal orientation of the aluminum phase in the RD direction is calculated. As the crystal orientations to be investigated, at least three representative crystal orientations of aluminum metal, <111>, <110>, and <100>, are selected, as well as a crystal orientation with a higher ratio as needed. Here, the partial ratio is used for the orientation ratio of the crystal orientation. The orientation ratio of the <100> crystal orientation of the aluminum phase in the RD direction is the average value (arithmetic mean) of the values ​​obtained by the above steps (1) to (3) for three measurement areas. <Method for measuring the average diameter of the silicon phase> In the measurement of the average diameter of the silicon phase in the L-section of the aluminum bonding wire or the aluminum bonding ribbon, the following method is used, similar to the measurement of the crystal orientation of the aluminum phase, that is, using a SEM-EDS-EBSD device, and combining the information on the aluminum concentration and silicon concentration obtained by SEM-EDS with the information on the crystal orientation obtained by EBSD. In detail, after implementing the above steps (1) and (2), the measurement is carried out according to the following step (3). (3) For the region specifically designated as the silicon phase, the crystal orientation is analyzed. If the orientation difference between the measurement points is 15° or more, it is judged to be a grain boundary and the equivalent circle diameter of each grain is calculated. Then, the equivalent circle diameter of each grain is averaged to calculate the average diameter of the silicon phase. Here, for the average calculation, the average value obtained by area average (area weighted average) is used. Furthermore, when calculating the average diameter of the silicon phase in the L-section, only silicon phases having a diameter (equivalent circle diameter) of 0.5 μm or more were considered. The average diameter of the silicon phase is the average value (arithmetic mean) of the values ​​obtained by the above steps (1) to (3) for three measurement areas. [Evaluation Method for Aluminum Bonding Wire or Aluminum Bonding Ribbon] The following describes the evaluation method for aluminum bonding wire. The aluminum bonding wire used for evaluation has a wire diameter of 300 μm. A silicon wafer is used as the semiconductor wafer, and an aluminum-0.5% copper alloy having a thickness of 4 μm is used as the electrode on the semiconductor wafer. A 5 μm nickel film is formed on an aluminum alloy as the substrate. The aluminum bonding wire is bonded using a commercially available wire bonder (manufactured by Ultrasonic Industries), with both the first bond (bonding to the electrodes on the semiconductor wafer) and the second bond (bonding to the substrate) being wedge-type. The aluminum bonding ribbon is bonded using the Hesse BJ955 fully automatic bonder equipped with a ribbon bonding head. <Evaluation method of high temperature temperature cycle reliability> A commercially available thermal shock tester is used in the high temperature temperature cycle test (high temperature TCT). In the high temperature TCT, the sample chamber is moved between a low temperature tank and a high temperature tank to repeatedly increase and decrease the temperature. The temperature of the low temperature tank is set to -40°C, and the temperature of the high temperature tank is set to 185°C. The test starts with the sample chamber in the high temperature tank, and one cycle is defined as the period from moving to the low temperature tank and then back to the high temperature tank. The time the sample chamber stays in the low temperature tank and the high temperature tank is set to 20 minutes each. The sample for the high temperature TCT adopts a structure in which a semiconductor chip is mounted on a substrate, and the electrodes on the semiconductor chip and the electrodes on the substrate are connected by aluminum bonding wire or aluminum bonding tape. After the start of the test, the sample is taken out after 1000 cycles, and a shear test of the first joint is performed. The shear strength of the first joint used to evaluate the temperature cycle reliability is the average value of the shear strength of 5 randomly extracted first joints. Evaluation is performed using the ratio of the shear strength value F2 after the temperature cycling test to the shear strength value F1 before the temperature cycling test (F2 / F1). If the strength ratio is less than 50%, it is judged to be practically problematic and is assigned a rating of "0." If the strength ratio is 50% or higher but less than 70%, it is judged to require improvement and is assigned a rating of "1." If the strength ratio is 70% or higher but less than 75%, it is judged to be excellent and is assigned a rating of "2." If the strength ratio is 75% or higher, it is judged to be particularly excellent and is assigned a rating of "3." "0" and "1" are considered unacceptable, while "2" and "3" are considered acceptable. The evaluation results are recorded in the "High-Temperature Cycling Reliability" column in the table. <Evaluation of High-Temperature Cycling Reliability (After 1300 Cycles)> In the aforementioned high-temperature TCT test, samples were removed after 1300 cycles and subjected to shear testing of the first joint. The shear strength of the first joint used for the temperature cycling reliability evaluation was the average of the shear strengths of five randomly selected locations. Evaluation was performed using the strength ratio (F2 / F1) of the shear strength after the high-temperature TCT (1300 cycles) to the shear strength before the high-temperature TCT (F1). If the strength ratio was less than 50%, the test was judged to be practically problematic and scored "0." If the strength ratio was 50% or higher but less than 60%, the test was judged to be practically satisfactory and scored "1." If the strength ratio was 60% or higher but less than 70%, the test was judged to be excellent and scored "2." If the strength ratio was 70% or higher, the test was judged to be particularly excellent and scored "3." "0" indicates failure, while "1," "2," and "3" indicate passing. The evaluation results are recorded in the "High-temperature temperature cycling reliability (after 1300 cycles)" column of the table. <Evaluation method of first bonding strength> The evaluation method of first bonding strength is described. The first bonding strength is evaluated by a shear strength test. 10 first bonds are performed under bonding conditions suitable for reliability testing, and the shear strength (shear strength) of the first bonding portion is measured. Under the bonding conditions, the ultrasonic output is set slightly higher to ensure the bonding area. In the shear strength measurement, a commercially available micro shear strength tester (4000-PLUS manufactured by Nordson) is used. The shear speed is set to 200 μm / second, and the height of the shear tool is set to 10 μm from the electrode surface. The shear strength is measured by fixing the substrate bonded with an aluminum bonding wire or an aluminum bonding tape using a jig. If the average shear strength of the ten first joints is 1500 gf or greater, it is considered excellent and rated "3." If it is 1300 gf or greater but less than 1500 gf, it is considered practically sound and rated "2." If it is 1000 gf or greater but less than 1300 gf, it is considered necessary for improvement and rated "1." If it is less than 1000 gf, it is considered practically problematic and rated "0." The evaluation results are recorded in the "First Joint Strength" column of the table. <Evaluation Method for Wire Breakage During Processing> This section describes the evaluation method for wire breakage during processing. Wire drawing was performed with wire diameters ranging from 6 mmφ to 0.3 mmφ, and the number of wire breakages was determined. Wire drawing conditions, such as feed speed and area reduction ratio, were selected from the conditions described above, and appropriate manufacturing conditions were adjusted for each wire. The length of the drawn aluminum bonding wire ranged from 100 to 200 m, and the number of wire breakages was calculated per 100 m. A zero breakage was considered good and scored "3." A single breakage was considered manageable by improving manufacturing conditions and scored "2." A breakage of 2 to 4 times indicated a decrease in productivity and was scored "1." A breakage of 5 or more times was considered impractical and scored "0." The evaluation results are recorded in the "Wire Breakage During Processing" column of the table. (Evaluation Method for Surface Damage and Scratches) The surface properties of aluminum bonding wire or aluminum bonding tape were evaluated with a focus on damage and scratches. The wire diameter of the aluminum bonding wire was set to 300 μm. Three measurement areas were randomly selected at intervals of at least 1 m relative to the central axis of the aluminum bonding tape. Three samples, approximately 2 cm in length, were collected from each of the three locations, for a total of nine samples. Specifically, the surface was observed using an SEM at magnifications ranging from 50x to 500x. Damage of 50 μm or longer and scratches of 30 μm or longer were considered defective. The number of damage and scratches was counted. If there were no damage or scratches, the result was considered good and acceptable, and scored "3." If there were one or more to two damage or scratches, the result was considered practically acceptable, and scored "2." If there were three to seven damage or scratches, the result was considered poor, and scored "1." If there were eight or more damage or scratches, the result was considered practically difficult, and scored "0." The evaluation results are recorded in the "Surface Properties" column of the table. The evaluation results of the Examples and Comparative Examples are shown in Tables 1 to 4. Examples 1 to 40 and Comparative Examples 1 to 7 in Tables 1 to 3 are the results for aluminum bonding wires, and Examples B1 to B3 and Comparative Example B1 in Table 4 are the results for aluminum bonding tapes. [Table 1] (Table 1) [Table 2] (Table 2) [Table 3] (Table 3) [Table 4] (Table 4) 1: Aluminum bonding wire 2: Aluminum bonding strip 10: Center axis 11: L cross section 20: Center axis 21: L cross section RD: Direction parallel to the center axis T: Thickness W: Width FIG1 shows an example of the silicon concentration distribution when the depth-direction silicon concentration of the aluminum bonding wire or aluminum bonding tape of the present invention is measured and evaluated by XPS. It is the depth-direction distribution of the silicon concentration when the total of metal silicon and metal aluminum is set to 100 atomic %. FIG2 shows an example of the Si2p silicon zero valence peak obtained by XPS for the aluminum bonding wire or aluminum bonding tape of the present invention. FIG2 is a diagram used to illustrate the quantification of the silicon element based on the Si2p silicon zero valence peak. FIG3 is a schematic diagram used to illustrate the measurement target surface (inspection surface) when measuring the crystal orientation of the aluminum phase and the average diameter of the silicon phase for the aluminum bonding wire. The measurement target surface is a cross-section (L cross-section) of the aluminum bonding wire in the center axis direction including the center axis. FIG4 is a schematic diagram used to illustrate the measurement target surface (inspection surface) when measuring the crystal orientation of the aluminum phase and the average diameter of the silicon phase for the aluminum bonding tape. The surface to be measured is a cross section (L cross section) of the aluminum bonding strip in the direction of the central axis including the central axis. 1: Aluminum bonding wire 10: Center axis 11: L section RD: Direction parallel to the central axis

Claims

1. An aluminum connector, comprising an aluminum bonding wire or aluminum bonding strip, containing 3.0% by mass and 20.0% by mass of silicon, wherein, when the silicon concentration (atomic %) of the aluminum bonding wire or aluminum bonding strip in the depth direction from the surface is determined by X-ray photoelectron spectroscopy (XPS), the ratio of the average silicon concentration Ca in region a at a depth of 5 nm to 50 nm from the surface to the average silicon concentration Cb in region b at a depth of 800 nm to 1200 nm from the surface, Ca / Cb, is 0.03 to 0.

5.

2. The aluminum connector as claimed in claim 1, wherein the average diameter of the silicon phase in the L-section (including the section in the direction of the central axis of the central axis) of the aluminum bonding wire or aluminum bonding strip is more than 0.8 μm and less than 4 μm.

3. The aluminum connector of claim 1, wherein the average concentration Cf of silicon element in the region f at a depth of 5 nm to 30 nm from the surface is 0.1 atomic% to 4 atomic%.

4. As in claim 1, when determining the crystallization orientation of the aluminum phase in the L-section (including the section in the direction of the central axis) of the aluminum bonding wire or aluminum bonding strip, the orientation ratio of <100> crystallization orientations with an angle difference of less than 15° relative to the direction parallel to the central axis (RD direction) is 15% to 50%.

5. The aluminum connector material as claimed in claim 1 further contains strontium, sodium, phosphorus and boron in aggregate amounts of 10 ppm to 800 ppm.

6. The aluminum connector material as claimed in claim 1 further contains, in aggregate, more than 100 ppm by mass and less than 2000 ppm by mass of any one of nickel, titanium, iron, zinc and magnesium.

7. The aluminum connector as claimed in claim 5 further contains one or more of nickel, titanium, iron, zinc, and magnesium in aggregates of 100 ppm to 2000 ppm.

8. The aluminum connector as claimed in any of claims 1 to 7, wherein the total concentration of elements other than aluminum, silicon, strontium, sodium, phosphorus, boron, nickel, titanium, iron, zinc and magnesium in the aluminum connector is less than 0.5% by mass.

9. The aluminum connector as requested in item 2, wherein the average diameter of the silicon phase is the value measured using a SEM-EDS-EBSD device.

10. The aluminum connector as claimed in claim 4, wherein the orientation ratio of the crystal orientation is a value measured using a SEM-EDS-EBSD device.

11. The aluminum connector as claimed in claim 1, used in a semiconductor device.

12. A semiconductor device comprising an aluminum interconnect as claimed in claim 1.

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