Semiconductor device with backside connection mechanism and methods for manufacturing the same

Abstract

This invention describes methods, apparatus, and systems relating to a memory device having one or more integrally formed structures on its back side. A memory device may include a back pad-via structure, a back relay structure, or a combination thereof. These back side structures may include integrally formed portions extending in different directions to laterally distribute electrical signals on the back side.

Description

Semiconductor device with back-side connection mechanism and method for manufacturing the same. The disclosed embodiments relate to devices, and more specifically, to semiconductor devices having a back-side connection mechanism and methods for manufacturing them. A semiconductor device may include one or more circuits fabricated or embedded in semiconductor material, such as a combination of transistors, capacitors, and other similar circuit components. Some examples of a semiconductor device may include a semiconductor die comprising semiconductor-based circuitry, a package, a system-on-a-chip, a circuit card, or the like. This semiconductor device can be configured for a variety of functions, such as for a processor or a memory device (e.g., a volatile memory device, a non-volatile memory device, or a combined device). With the advancement of technology and the increasing applications, the market is constantly seeking faster, more efficient, and smaller devices. To meet market demands, semiconductor devices are being pushed to their limits through various improvements. Typically, device improvements may include increasing circuit density, reducing circuit footprint, increasing operating speed or otherwise reducing operating latency, increasing reliability, reducing power consumption or manufacturing costs, and other metrics. For example, three-dimensional (3D) architectures for semiconductor device design are being researched. As described in more detail below, the technology disclosed herein relates to a semiconductor device having a backside (BS) connection mechanism, such as for memory systems, systems having memory devices, and related methods. The BS connection mechanism may include circuitry or signal routing structures located on one BS or a non-operating side of a semiconductor device (e.g., a die, a wafer, or the like) and configured to route electrical connections or signals along one or more directions. Furthermore, the BS connection mechanism may be configured to facilitate electrical coupling between wafer bonding structures, such as along the vertical direction between stacked / directly bonded wafers or corresponding dies. In some embodiments, a dual damascene (DD) process can be used to form the BS fabrication mechanism. Therefore, the BS fabrication mechanism can possess the characteristics or structural features of a DD structure, such as integral, continuous, or non-attached transitions between structural parts. For example, the BS fabrication mechanism can have the characteristic of laterally extending traces, pads, and / or vias that are seamlessly connected to each other by forming them through a single / continuous metallization or deposition step of a DD process. The BS routing mechanism provides lateral signal routing while maintaining or reducing the overall device thickness. The BS routing mechanism may include one or more layers of laterally extending traces and vias (e.g., a BS redistribution layer (RDL)), which together provide complete three-dimensional (3D) routing of electrical connections across stacked devices. Furthermore, with the RDL positioned on the BS of the device, the BS routing mechanism can be separated from the front-side circuitry across a semiconductor thickness or body. Therefore, 3D routing can be implemented without affecting or altering the front-side circuitry layout. This separation of signal routing further increases the scalability of fine-pitch connections. Additionally, the BS routing mechanism provides an offset bonding design and enables direct (e.g., copper-to-copper) bonding across stacked devices while reducing the overall resistance and thickness of the 3D electrical connections. Figure 1 is a block diagram of an apparatus 100 (e.g., a semiconductor die assembly including a three-dimensional integration (3DI) device or a die stack package) according to one embodiment of the present technology. For example, apparatus 100 may include a DRAM or a portion thereof comprising one or more dies / wafers. Device 100 may include a memory cell array, such as memory array 150. Memory array 150 may include a plurality of memory banks (e.g., memory banks 0 to 15), and each memory bank may include a plurality of word lines (WLs), a plurality of memory channels (DLs), and a plurality of memory cells disposed at the intersections of word lines and bit lines. Memory cells may include any of several different memory media types, including capacitive, magnetoresistive, ferroelectric, phase-change, or similar. Details regarding the structure of WLs, DLs, and memory cells are described below. The selection of a word line (WL) can be performed by a column decoder 140, and the selection of a digital line (DL) can be performed by a row decoder 145. A sense amplifier (SAMP) can be provided for coupling the digital line DL to at least one respective local I / O line pair (LIOT / B), which can then be coupled to at least one respective main I / O line pair (MIOT / B) via a transfer gate (TG) that can be used as a switch. The sense amplifier and the transfer gate can operate based on control signals from a decoder circuitry that may include any control circuitry of the command decoder 115, column decoder 140, row decoder 145, memory array 150, or any combination thereof. The memory array 150 may also include board wiring and associated circuitry for managing its operation. Device 100 may employ a plurality of external terminals, including command and address terminals respectively coupled to a command bus and an address bus to receive command signals (CMD) and address signals (ADDR). Device 100 may further include a chip select terminal for receiving a chip select signal (CS), a clock terminal for receiving clock signals CK and CKF, a data clock terminal for receiving data clock signals WCK and WCKF, data terminals DQ, RDQS, DBI, DMI, and power supply terminals VDD, VSS, and VDDQ. An address signal and a memory bank address signal (not shown in Figure 1) can be supplied externally to the command and address terminals. The address signal and memory bank address signal supplied to the address terminals can be transmitted to an address decoder 110 via a command / address (CA) input circuit 105. The address decoder 110 can receive the address signal and supply a decoded column address signal (XADD) to the column decoder 140 and a decoded row address signal (YADD) to the row decoder 145. The address decoder 110 can also receive the memory bank address signal and supply the memory bank address signal to both the column decoder 140 and the row decoder 145. Command signals (CMD), address signals (ADDR), and chip select signals (CS) can be supplied to command and address terminals from a memory controller and / or a chip assembly. Command signals can represent various memory commands from the memory controller (e.g., access commands, which may include read and write commands). Chip select signals can be used to select device 100 to respond to commands and addresses provided to the command and address terminals. When an active chip select signal is provided to device 100, commands and addresses can be decoded, and memory operations can be performed. Command signals can be provided as internal command signals ICMD via command / address input circuitry 105 to a command decoder 115. Command decoder 115 may include circuitry for decoding internal command signals ICMD to generate various internal signals and commands for performing memory operations (e.g., command signals for selecting a column of a word line and command signals for selecting a row of a bit line). Command decoder 115 may further include one or more registers for tracking various counts or values ​​(e.g., counts of refresh commands received by device 100 or counts of self-refresh operations performed by device 100). Data can be read from memory cells in memory array 150, specified by column addresses (e.g., addresses with an active command) and row addresses (e.g., addresses with read addresses). The read command can be received by command decoder 115, which provides internal commands to input / output circuitry 160, allowing the read data to be output from data terminals DQ, RDQS, DBI, and DMI via read / write amplifier 155 and input / output circuitry 160 according to the RDQS clock signal. Read data can be provided at a time defined by read delay information RL, which can be programmed in device 100 (e.g., in a mode register (not shown in FIG. 1)). The read delay information RL can be defined according to the clock cycle of the CK clock signal. For example, the read delay information RL can be a number of clock cycles of the CK signal after receiving the read command via device 100 when providing the associated read data. Write data can be supplied to data terminals DQ, DBI, and DMI based on the WCK and WCKF clock signals. Write commands can be received by command decoder 115, which provides internal commands to input / output circuitry 160, allowing write data to be received by the data receiver in input / output circuitry 160 and supplied to memory array 150 via input / output circuitry 160 and read / write amplifier 155. Write data can be written to memory cells specified by column and row addresses. Write data can be supplied to the data terminals at a time defined by write delay information WL. Write delay information WL can be programmed in device 100 (e.g., in a mode register). Write delay information WL can be defined based on the clock cycle of the CK clock signal. For example, write delay information WL can be a number of clock cycles of the CK signal after receiving a write command via device 100 when associated write data is received. It can supply power potential V to the power terminals DD and V SS This power supply potential V can be... DD and V SS Supply is provided to an internal voltage generator circuit 170. The internal voltage generator circuit 170 can be based on a power supply potential V. DD and V SS Generate various internal potentials V PP V OD V ARY V PERI And similar. Internal potential V PP It can be used in column decoder 140, internal potential V OD and V ARY It can be used in a sense amplifier included in a memory array 150, and the internal potential V PERI It can be used in many other circuit blocks. It can also supply power potential V to the power terminals. DDQ The power supply potential V can be adjusted. DDQ The power supply potential VSS is supplied together with the input / output circuit 160. DDQ It can be related to the power supply potential V SS The same potential. In another embodiment of this technology, the power supply potential V DDQ It can be different from the power supply potential V DD One of the potentials. However, the dedicated power supply potential V DDQ It can be used in the input / output circuit 160 to prevent power noise generated by the input / output circuit 160 from propagating to other circuit blocks. External clock signals and complementary external clock signals can be supplied to the clock terminals and data clock terminals. External clock signals CK, CKF, WCK, and WCKF can be supplied to a clock input circuit 120. CK and CKF signals can be complementary, and WCK and WCKF signals can also be complementary. Complementary clock signals can have relative clock levels and simultaneously transition between relative clock levels. For example, when a clock signal is at a low clock level, a complementary clock signal is at a high level, and when the clock signal is at a high clock level, the complementary clock signal is at a low clock level. Furthermore, when the clock signal transitions from a low clock level to a high clock level, the complementary clock signal transitions from a high clock level to a low clock level, and when the clock signal transitions from a high clock level to a low clock level, the complementary clock signal transitions from a low clock level to a high clock level. An input buffer included in clock input circuit 120 can receive an external clock signal. For example, an input buffer can receive a clock / enable signal when enabled by a clock / enable signal from command decoder 115. Clock input circuit 120 can receive an external clock signal to generate an internal clock signal ICLK. The internal clock signal ICLK can be supplied to an internal clock circuit 130. Internal clock circuit 130 can provide internal clock signals with various phase and frequency controls based on receiving the internal clock signal ICLK and a clock enable signal from command / address input circuit 105 (not shown in FIG. 1). For example, internal clock circuit 130 can include a clock path (not shown in FIG. 1) that receives the internal clock signal ICLK and provides various clock signals to command decoder 115. Internal clock circuit 130 can further provide input / output (IO) clock signals. The I / O clock signal can be supplied to the input / output circuit 160 and can be used as a timing signal to determine the output timing for reading data and / or the input timing for writing data. The I / O clock signal can be provided at multiple clock frequencies, allowing data to be output from and input to the device 100 at different data rates. A higher clock frequency is desired when high memory speed is desired. A lower clock frequency is desired when lower power consumption is desired. The internal clock signal ICLK can also be supplied to the internal clock circuit 130, thus generating various internal clock signals. Device 100 can be connected to any of a number of electronic devices, or components thereof, capable of using memory for temporary or permanent storage of information. For example, a host device of device 100 can be a computing device, such as a desktop or portable computer, a server, a handheld device (e.g., a mobile phone, a tablet computer, a digital reader, a digital media player), or a component thereof (e.g., a central processing unit, a processor, a dedicated memory controller, etc.). The host device can be a network device (e.g., a switch, a router, etc.), or a recorder of digital image, audio, and / or video, a vehicle, an appliance, a toy, or any of several other products. In one embodiment, the host device can be directly connected to device 100; however, in other embodiments, the host device can be indirectly connected to a memory device (e.g., via a network connection or through an intermediary device). Memory array 150 can be formed using one or more memory dies. These memory dies can be physically stacked in a vertical manner. These memory dies can be a portion of a memory stack on top of a logic (IF) die, a central processing unit (CPU) die, and / or a graphics processing unit (GPU) die. Within the stack, each memory die can be coupled to another memory die via interconnects. As the number of memory arrays 150 increases, the number of interconnects between them also increases. Therefore, increasing the number of memory arrays 150 may require a similar increase in the interconnect structure within the die / stack. In one embodiment, the interconnect structure can be achieved by an interconnect comprising a combination of a dual damascene (DD) redistribution layer (RDL) and a DD-back via (VL). In another embodiment, this can be achieved by a DD pad and a via. In yet another embodiment, this can be achieved by a combination of the embodiments mentioned above. Figure 2A is a cross-sectional view of a first stacked device 200 having a first connection configuration. The first connection configuration may include a set of interconnects 202 (e.g., solder, microbumps, conductive pillars, or the like) that electrically and / or structurally connect a top device 212 and a bottom device 214 (e.g., stacked semiconductor wafers or corresponding dies). The top device 212 may include a set of top device pads 222 that directly contact / attach to the interconnects 202. The bottom device 214 may include a set of bottom device pads 224 that directly contact / attach to the interconnects 202. Therefore, the first stacked device 200 may have a separation distance 230 between the adjacent / facing surfaces of the top device 212 and the bottom device 214. The first stacked device 200 may include a bottom device via 234 directly attached to the bottom device pad 224. Furthermore, the connection area between the bottom device via 234 and the bottom device pad 224 may have characteristics associated with formation or deposition in two separate processes, such as delamination, unevenness or protruding edges, layers or uneven protrusions in the surrounding structure (e.g., dielectric), or the like. In addition to the connection characteristics, the bottom device via 234 may extend vertically or straight downwards. While the first stacked device 200 vertically connects the top device 212 and the bottom device 214, the use of interconnect 202 results in an unnecessary increase in the separation distance 230. Furthermore, the interconnect 202 and the resulting separation distance 230 fail to provide sufficient structural support for the overall structure. For example, when wafer-to-wafer bonding is implemented such that the top and bottom devices correspond to semiconductor wafers, the separation between the wafers prevents the two wafers from forming a single structure. Therefore, each wafer needs to maintain a minimum thickness to prevent structural damage. Alternatively, one or more wafers will require a temporary bonding adhesive carrier system to maintain structural integrity during and / or after the semiconductor process. Furthermore, the direct connection between the bottom device via 234 and the bottom device pad 224 forces all lateral signal routing to occur on one side of the device, such as the active side of the bottom device 214. Therefore, the active side becomes more crowded and cannot support the increasing demand for higher signal density. Additionally, the via needs to extend over the thicker body of the bottom device. The longer via, along with the interconnect 202, provides unnecessary resistance that requires higher power levels and generates more heat. Figure 2B is a cross-sectional view of a second stacked device 250 having a second connection configuration. The second connection configuration may include components similar to the first stacked device 202 of Figure 2A. For example, the second stacked device 250 may include interconnects 252 connecting a top device 262 and a bottom device 264 (e.g., stacked semiconductor wafers or corresponding dies). Similar to the first stacked device 202, the devices in the second stacked device 250 may (1) include top device pads 272 and bottom device pads 274 directly attached to the interconnects 252 and (2) be separated by a separation distance 280. In addition, the bottom device 264 may include a bottom device via 284. Unlike the first stacked device 200, the bottom device 264 may include one RDL 286 disposed between the bottom device via 284 and the bottom device pad 274. The RDL 286 may include electrical connectors configured to transmit electrical signals / connections across one or more lateral layers in the lateral direction, such as leads, traces, partial vias, connection planes, separation dielectric layers, or combinations thereof. Including RDL 286 on the BS of the bottom device 264 can provide an additional layer for lateral signal routing between devices, thereby reducing the signal density on the front side. Therefore, the second stacked device 250 can have a finer pitch (e.g., 15 μm to 20 μm) than the first stacked device 200. However, due to the use of interconnect 252, the second stacked device 250 still requires additional structural support during manufacturing. Furthermore, attaching the devices to interconnect 252 requires separate temperature-based processing steps, such as a high-temperature process for forming the front-side (FS) solder on the top device 262 and a low-temperature process for forming the under-bump metal (UBM) on the bottom device 264. Alternatively, a semi-additive process can be used to form the RDL 286, which can produce a thicker RDL and passivation layer, thereby increasing unwanted parasitic capacitance. These RDLs can have larger feature sizes and pitches, resulting in lower density. Figure 3A is a cross-sectional view of a first example device 300 having a first BS connection mechanism 302 according to one embodiment of the present technology. Device 300 may include a semiconductor wafer, and Figure 3A may represent a portion of the wafer corresponding to a die (e.g., device 100 of Figure 1, such as a DRAM). Device 300 may have a BS 304 surrounding a core 308 (e.g., a semiconductor substrate material, such as silicon (Si)) or defining its opposite sides, and a front face (FS) 306. FS 306 may include an operational circuitry system implementing functions, operations, and / or storage calibrated for device 300. Unlike conventional designs, device 300 may include a BS connection mechanism 302, comprising one or more layers, each having vertical and horizontal portions integrally connected to each other. The integrally connected vertical and horizontal connection portions can be formed using a DD process. Therefore, the integrally connected portions may have one or more characteristics caused by the DD process, such as rounded corners, integral joints, surrounding layer characteristics, or a combination thereof. As part of the integrated design, the BS connection mechanism 302 may include one or more DD pad-via structures 310 exposed on and / or defining one of the outer surfaces of the BS 304. The DD pad-via structure 310 may be configured to (1) provide an electrical connection and a direct structural bond with a corresponding external structure (e.g., a bonding pad on a stacked / bonded wafer), while (2) extend the electrical connection vertically (downward) to or through the next(s) adjacent layers. Therefore, the DD pad-via structure 310 may include an electrical conductor, such as a metallic material (e.g., copper (Cu)), to facilitate direct bonding. The conductive material of the DD pad-via structure 310 may have a pad portion 312 and a via portion 314 integrally formed with each other. The pad portion 312 may be exposed on a peripheral surface to facilitate bonding, and the via portion 314 may extend vertically (e.g., downward in FIG. 3A) from the pad portion 312 toward the core 308. The pad portion 312 and the via portion 314 may have different shapes corresponding to their respective functions. For example, the pad portion 312 may have a wider or longer lateral dimension and a corresponding shape (e.g., rectangular or oval) than the via portion 314 to facilitate device-to-device direct bonding (e.g., Cu-to-Cu bonding). Furthermore, the via portion 314 may have a greater depth or height than the pad portion 312 to facilitate vertical electrical connections. Thus, although the shapes of the pad portion 312 and the via portion 314 define or form a single connector 316, the materials may be uniform, and the structural connector 316 may be integral because these portions are formed through a single deposition step (e.g., DD process). In other words, the DD pad-via structure 310 may have a single connector 316, rather than a joint with structural divisions or uniform variations formed by using multiple separate deposition steps (e.g., additional manufacturing steps between separate depositions). As another illustration of the integral component, the BS connection mechanism 302 may additionally or alternatively include one or more BS DD RDL layers 320. The BS DD RDL layers 320 may be disposed between the pad portion 312 (e.g., the outer surface of the BS 304) and the core 308. One or more of the BS DD RDL layers 320 may include one or more lateral portions 322 having conductive material extending in a lateral direction. The first device 300 may use the lateral portions 322 to laterally transmit electrical signals, power, ground connections, and the like across a plane or layer. One or more of the BS DD RDL layers 320 may further include one or more vertical portions 324 having conductive material extending in a vertical direction (e.g., downward). The vertical portion 324 may be vertical and span one or more layers, span the thickness of a core 308 (such as a TSV), and provide electrical connections between the functional circuitry 340 (e.g., data storage circuitry, such as transistors or capacitors, and / or control CMOS circuitry) and the BS pad (e.g., DD pad-via structure 310), or a combination thereof. When the first device 300 is stacked below / below another device, the BS DD RDL layer 320, the BS DD RDL-TSV structure 322 / 324, the DD pad-via structure 310, or a combination thereof may connect the functional circuitry 340 and / or a circulating signal (e.g., a signal from a device stacked below the first device 300) to the stacked / on-top device. As described above, the RDL integral connector 326 can be connected to each other via a single integral connector 326, such as connector 316, which can be made of a uniform material and is integral across the transverse portion 322 and the vertical portion 324 (e.g., without structural division / separation). Because the transverse portion 322 and the vertical portion 324 are formed through a single deposition step (e.g., DD process), the RDL integral connector 326 can be integral and uniform. In some embodiments, the first device 300 may include a front RDL 332 positioned closer to or on the FS 306 than the BS 304. For example, the FS RDL 332 may be positioned opposite to and across the core 308 and / or the active circuitry 340 of the DD pad-via structure 310, the BS DD RDL 320, the BS DD RDL-TSV structure 322 / 324, or a combination thereof. The FS RDL 332 may be configured to route electrical signals to / from the active circuitry 340, the BS DD RDL 320, or both, and / or through the FS 306 (e.g., a pad on the FS 306). The FS RDL 332 may include one or more layers 336, each including (1) a lateral extension 334 for transmitting electrical signals in the lateral direction, (2) a vertical portion 338 for transmitting electrical signals in the vertical direction and / or between layers 336, or a combination thereof. When the first device 300 is stacked on top of another device, the FS RDL 332 can connect the operating circuit system 340 and / or a circulating signal (e.g., a signal from a device stacked above the first device 300) to the stacked / below device. Oxide layers (e.g., interlayer dielectrics (ILDs), such as SiO) can be used to define or separate individual layers (such as FS RDL 332, BS DD RDL, BS DD RDL-TSV structures 322 / 324, and / or DD pad-via structure 310). Using a BS layer for illustrative purposes, the layered oxide layer may include a pad layer, a via layer, and an RDL layer. For example, the pad layer may include an ILD with an embedded pad portion 312. The via layer may include an ILD adjacent to or below the pad layer and having an embedded via portion 314. The RDL layer may include an ILD adjacent to or below the via layer and having an embedded BS DD RDL 320 (e.g., a portion of the lateral portion 322 and / or the vertical portion 324). As described in detail below, the DD process for the DD pad-via structure 310 may include shaping the pad and via layers to form a continuous recess. Subsequently, a DD pad-through-hole structure 310 can be formed by depositing conductive material into the continuous recesses. In some embodiments, the individual layers can be separated by a protective layer. Using a BS layer for illustrative purposes, the first device 300 may include a BS protective layer (e.g., SiCN) disposed above or between the oxide layers. The BS protective layer or similar liner may be disposed in a recess before the deposition of the conductive material. Thus, the BS protective layer or similar liner can persist as a separation layer between the oxide layer and the conductive material and prevent the conductive material from diffusing into the oxide layer. Figure 3B is a cross-sectional view of a first instance device 300 connected to a stacking device 352 according to one embodiment of the present technology. Figure 3B may illustrate a portion of the stacking device 352 (e.g., a portion below the operating circuitry) and a portion of a first assembly 350 of the stacking device 352 attached above the first instance device 300. The first assembly 350 may include a set of stacked semiconductor wafers or a set of corresponding stacked semiconductor chips. For the example illustrated in Figure 3B, the BS 304 of the first device 300 may be attached to a top device FS 356. In some embodiments, the first assembly 350 may have a stacked device 352 and the first device 300 that are directly bonded to each other (e.g., without any adhesive or solder). For example, the pad portion 312 of the first device 300 may directly contact and (e.g., through diffusion bonding) bond to the top pad 354 of the stacked device 352. The first assembly 350 may include any number of stacked devices. In some embodiments, the first assembly 350 may include two or more (e.g., four, eight, twelve, sixteen or more) memory devices, such as DRAM or flash devices having corresponding storage cell / cell circuitry in the operational circuitry system. The assembly 350 may further include one of the interface devices configured to provide an interface or control function for the stacked devices (e.g., other memory devices). In some embodiments, the first device 300 may be a core DRAM device, and the top device 352 may be a top DRAM device. Figure 3C is a waterfall diagram 360 of a first stacked assembly (e.g., stacked assembly 350 of Figure 3B) according to one embodiment of the present technology. As described above, the stacked assembly may have any number of devices 362 stacked / joined to each other. For the example illustrated in Figure 3C, the stacked assembly may include eight semiconductor memory devices 362 or chips (devices 0 to 7). For each of the devices 362, a waterfall diagram 360 can be used to illustrate the I / O circuitry (e.g., input / output circuitry 160) and the data storage circuitry (shown using a circle). The BS DD RDL 320 of Figure 3A can be illustrated using a top bar (with a wider " / " fill). The FS RDL 332 can be illustrated using a bar below the data storage circuitry (with an "x" fill). As shown in Figure 3C, the BS DD RDL 320 and FS RDL 332 can extend laterally beyond the data storage circuitry, thereby allowing lateral displacement of selectable connections (e.g., power and / or pass-through data / content signals). A vertical bar (with a wider "\" fill) is used to illustrate direct connections between adjacent devices. The stack assembly may have a communication channel 364 that allows access to each of the devices 362. In other words, the communication channel 364 allows each of the devices 362 to interact with circuitry external to the stack assembly. In some embodiments, the stack assembly may include at least one channel (e.g., a connection signal path) dedicated to each of the devices 362. The communication channel 364 may be available on one of the bottom surfaces of the stack assembly. Thus, when the stack assembly is mounted over a printed circuit board (PCB), another semiconductor device, an interposer, or the like, the communication channel 364 can electrically couple the stack devices 362 to other circuitry on the PCB, external semiconductor device, interposer, or the like. A waterfall diagram 360 may illustrate communication channels 364 or electrical paths extending between and / or through stacked devices 362. In some embodiments, a cascade path 376 may provide a communication path to and from a top device 372 (e.g., device 7). The cascade path 376 of the top device 372 may be accessible to external interfaces via a first peripheral channel 374 (e.g., channel 7). When channels are available across a common surface, the channel positions need to be separated across the lateral direction. A combination of BS DD RDL 320, FS RDL 332, or the like may be used in each device to provide corresponding lateral signal routing. For example, for cascade path 376, the I / O circuitry (e.g., input / output circuitry 160) at the top device 372 may be connected to the DD RDL 320 of the device directly below (device 6), and the DD RDL 320 may be laterally routed across a channel. Cascade path 376 may similarly shift a lateral channel / position across each successive stacked device. Therefore, the cascading path 376 of the top device 372 of the eight-device stack can have seven lateral displacements corresponding to the seven devices below the top device 372. The interface of one of the bottom dies 382 of the stack can be implemented through a relative peripheral channel 384. In some embodiments, the first assembly 350 of FIG. 3B may correspond to a one-offset joint design. As shown in waterfall figure 360 ​​, the offset engagement design allows direct output of the IO circuit at this end to a relative peripheral position. The apparatus below may have a horizontal portion 322 of FIG. 3A configured so that the connection is offset and distributed along a horizontal direction to the next location within a set of specified interface locations (e.g., a predetermined physical location of a channel on the bottom surface of the stack). Offset Joint Design The power connection, the data / content signal, or both can be offset laterally using the horizontal portion 322 and / or the horizontal extension 334 of Figure 3A of FS RDL 332 of FIG. 4 is a plan view 400 of a relay layer (e.g., BS DD RDL 320 of FIG. 3A ) associated with a BS link mechanism (e.g., BS DD RDL 320 of FIG. 3A ) according to one embodiment of the present technology. Plan view 400 may represent part of a horizontally connected pattern. The horizontal portion 322 may have a width 402 and a length 404 . In one or more embodiments, the width 402 may be 3 μm to 10 μm, and the length 404 may be 1 μm to 5 μm. The transverse portions 322 may be separated from each other along one or more transverse directions for a corresponding separation distance 406 . In one or more embodiments, the separation distance 406 may be 1 μm to 5 μm. 4 may further depict horizontal portions 322 above and below having various vertical connections represented by a circular occupied area. For example, a plan view 400 may demonstrate an area of ​​a joined lining covering portion 412 (using a contour display having alternating dashed lines and dots) that corresponds equivalently to an area of ​​the horizontal portion 322 directly below or resorting to overlapping of the lining portion 312 . In other words, the joining lining covering portion 412 may indicate the position of the lining portion 312 and the corresponding external connection with respect to the horizontal portion 322 . Accordingly, the joint lining covering portion 412 may have dimensions (e.g., radius / diameter) corresponding to the joint lining dimension 414 . In some embodiments, the bonding liner size 414 may be 1 μm to 5 μm. Similarly, plan view 400 may show the location of the lateral portion 322 connected (e.g., overlapping / under-overlapping) to various connections (such as the through-hole portion 314 of FIG. 3A, the vertical portion 324 of FIG. 3A). For example, plan view 400 may show the location of the top through-hole interface 422 (shown using an outline with continuous lines) and / or the TSV interface 432 (shown using an outline with dashed lines). The top through-hole interface 422 may represent the area of ​​the lateral portion 322 that directly contacts the through-hole portion 314 of the upper DD pad-through-hole structure 310. The TSV interface 432 may represent the area of ​​the lateral portion 322 that directly contacts the vertical portion 324 (e.g., a TSV integrally connected to the lateral portion 322). In other words, the top through-hole interface 422 and the TSV interface 432 may represent the area occupied by the vertical structure and the location and size of the connection portion. Therefore, the top through-hole face 422 and the TSV face 432 have dimensions (e.g., radius / diameter) corresponding to the dimensions of the vertical connection structure (such as the top through-hole size 424 corresponding to one of the through-hole portions 314 and the TSV face size 434 corresponding to one of the vertical portions 324 / integral connector 326 in FIG. 3A). In some embodiments, the top through-hole size 424 may be 0.3 μm to 3 μm, and the TSV face size 434 may be 0.5 μm to 4 μm. Additionally, plan view 400 may illustrate other design rules for the BS connection mechanism 302. For example, plan view 400 may illustrate one of the TSV pitch dimensions 440 representing the separation distance between the vertical portions 324 of the BS DD RDL 320. In some embodiments, the TSV pitch dimension 440 may be from 1 μm to 10 μm. Figure 5A is a cross-sectional view of a second assembly 550 having a second BS connection mechanism 502 connected to a stacking device 552 according to one embodiment of the present technology. The second assembly 550 may include a second device 500. The second device 500 and the stacking device 552 may each include semiconductor wafers, semiconductor chips, or the like stacked or attached to each other. In some embodiments, the second assembly 550 may include the stacking device 552 and the second device 500 may be directly attached to each other (e.g., through diffusion bonding of corresponding pads). For illustrative purposes, FIG5A may correspond to a portion of a direct-attached wafer representing a memory device (e.g., device 100 of FIG1, such as a DRAM). The second assembly 550 and the second device 500 may be similar to the first assembly 350 of FIG3B and the first device 300 of FIG3A, respectively. For example, the second device 500 may have a BS 504 and an FS 506 surrounding or defining opposite sides of a core 508 (e.g., a semiconductor substrate material, such as Si). The FS 506 may include an operational circuitry 540 implementing functions, operations, and / or storage for the device 500. A stacking device 552 may be attached above the second device 500, and the BS connection mechanism 502 of the second device 500 may be configured to route signal, power, and / or ground connections to / from the stacking device 552. The BS connection mechanism 502 may have one or more layers, each having vertical and lateral portions integrally connected to each other (e.g., due to DD processing). Similar to the BS connection mechanism 302 of Figure 3A, the BS connection mechanism 502 may include a DD pad-through structure 510 having pad portions 512 and through-hole portions 514 that are attached to each other through an integral connector 516. The pad portions 512 of the second device 500 may be directly attached or joined to the corresponding pads of the stacked device 552. The BS connection mechanism 502 may also include a BS DD RDL 520 having a lateral portion 522 and / or a pad portion 523 (e.g., an internal landing pad configured to facilitate inter-layer connectivity without lateral signal delivery) that are attached to a vertical portion 524 (e.g., TSV) through an integral RDL connector 526. The integral connectors 516 and 526 may have a uniform material and be integral across the connection portion (e.g., without structural division / separation). Since the connection portion is formed through a continuous deposition step (e.g., DD process), the integral connectors 516 and 526 may be integral and uniform. The second device 500 may include an FS RDL 532 positioned closer to or on FS 506 than BS 504, such as opposite to or across core 508 and / or active circuitry 540, via DD pad-via structure 510, BS DD RDL 520, or a combination thereof. The FS RDL 532 may be configured to route electrical signals to / from active circuitry 540, BS DD RDL 520, or both and / or through FS 506 (e.g., pads on FS 506). The FS RDL 532 may include one or more layers, each including (1) a lateral extension 534 for routing electrical signals in the lateral direction, (2) a vertical portion 538 for routing electrical signals in the vertical direction and / or between layers, or a combination thereof. When the second device 500 is stacked on top of another device, the FS RDL 532 can connect the operating circuit system 340 and / or a flow signal (e.g., a signal from one of the devices stacked above the second device 500) to the stacked / under device. The second device 500 and / or the stacked device 552 may include oxide layers (e.g., ILD, such as SiO) and / or protective layers (e.g., SiCN) between layers, structures, or the like. For example, the oxide layers may surround the conductive portions and fill the bulk of each layer. Protective layers may be disposed between the oxide layers and separate them. Alternatively, the protective layer may be disposed between the integral structure and the oxide material (e.g., covering the surface of a recess for collecting deposited conductive material). Compared to the offset bonding design or the first device 300, which may use BS DD RDL 320 and / or FS RDL 332 for data / content signals, the second device 500 may use one of the RDLs to laterally route signals. For example, the second device 500 may have a BS DD RDL 520 configured to laterally route power connections and limit signal connections to a vertical path. In other words, for a given data / content signal, corresponding via portions 514 and vertical portions 524 may be aligned along a vertical line. The FS RDL 532 of the second device 500 may include a lateral extension 534 configured to laterally route data / content signals. The second device 500 may correspond to a stacked bonding design. Compared to content / data signals, the BS DD RDL 520 can provide a thicker or wider connection path through the BS DD RDL 520, thereby facilitating the flow of higher current and power (e.g., power supply or supply voltage). In addition, the seamless one-piece connector in the BS DD RDL 520 further reduces resistance in the path and provides higher density for the entire connection path, while reducing the manufacturing cost required to achieve these improvements. Figure 5B is a waterfall diagram 560 of the second assembly 550 of Figure 5A according to one embodiment of the present technology. Similar to the stacked assembly and corresponding waterfall diagram 360 of Figure 3C, the waterfall diagram 560 can illustrate a plurality of devices 562 and a number of communication channels 564 that uniquely facilitate one of the devices 562. For the example illustrated in Figure 5B, the stacked assembly may include eight semiconductor memory devices 562 or chips (devices 0 to 7) having eight communication channels 564 (channels 0 to 7). For the stacked bonding design and / or the second assembly 550 of Figure 5A, the waterfall diagram 560 can illustrate a cascaded path 576 for laterally delivering data / content signals using the FS RDL 532 of Figure 5A. Figure 6A is a cross-sectional view of a third assembly 650 having a third BS connection mechanism 602 connected to a stacking device 652 according to one embodiment of the present technology. The third assembly 650 may include a third device 600. The third device 600 and the stacking device 652 may each include semiconductor wafers, semiconductor chips, or the like stacked or attached to each other. In some embodiments, the third assembly 650 may include the stacking device 652 and the third device 600 may be directly attached to each other (e.g., through diffusion bonding of corresponding pads). For illustrative purposes, FIG6A may correspond to a portion of a direct-attached wafer representing a memory device (e.g., device 100 of FIG1, such as a DRAM). The third assembly 650 and the third device 600 may be similar to the first assembly 350 of FIG3B and the second assembly 550 of FIG5B, the first device 300 of FIG3A, and the second device 500 of FIG5A, respectively. For example, the third device 600 may have a BS 604 and an FS 606 surrounding or defining opposite sides of a core 608 (e.g., a semiconductor substrate material, such as Si). The FS 606 may include an operational circuitry 640 implementing functions, operations, and / or storage for the device 600. A stacking device 652 may be attached above the third device 600, and the BS connection mechanism 602 of the third device 600 may be configured to route signal, power, and / or ground connections to / from the stacking device 652. The BS connection mechanism 602 may have one or more layers, each having vertical and horizontal portions that are integrally connected to each other (e.g., due to DD programs). Similar to the BS connection mechanism 302 in Figure 3A and the BS connection mechanism 502 in Figure 5A, the BS connection mechanism 602 may include a DD pad-through structure 610 having a pad portion 612 and a through-hole portion 614 that are attached to each other through an integral connector 616. The pad portion 612 of the third device 600 may be directly attached or joined to the corresponding pad of the stacked device 652. The BS connection mechanism 602 may also include a BS DD RDL 620 having a lateral portion 622 and / or a pad portion 623 (e.g., an internal landing pad configured to facilitate inter-layer connection without lateral signal delivery) that are attached to a vertical portion 624 (e.g., TSV) through an integral RDL connector 626. The integral connectors 616 and 626 may be of uniform material and integral across the connection portion (e.g., without structural division / separation). Since the connection is formed through a continuous deposition step (e.g., DD process), the integral connectors 616 and 626 can be integral and consistent. The third device 600 may include an FS RDL 632 positioned closer to or on FS 606 than BS 604, such as opposite to or across core 608 and / or active circuitry 640, via DD pad-via structure 610, BS DD RDL 620, or a combination thereof. The FS RDL 632 may be configured to route electrical signals to / from active circuitry 640, BS DD RDL 620, or both and / or through FS 606 (e.g., pads on FS 606). The FS RDL 632 may include one or more layers, each including (1) an FS pad 634 for connection to the preceding layer, (2) a vertical portion 638 for routing electrical signals along the vertical direction and / or between layers, or a combination thereof. When the third device 600 is stacked on top of another device, the FS RDL 632 can connect the operating circuit system 340 and / or a flow signal (e.g., a signal from one of the devices stacked above the third device 600) to the stack / under the device. The third device 600 and / or the stacked device 652 may include oxide layers (e.g., ILD, such as SiO) and / or protective layers (e.g., SiCN) between layers, structures, or the like. For example, the oxide layers may surround the conductive portions and fill the bulk of each layer. Protective layers may be disposed between the oxide layers and separate them. Alternatively, the protective layer may be disposed between the integral structure and the oxide material (e.g., covering the surface of a recess for collecting deposited conductive material). Compared to the offset bonding design using both BS DD RDL 320 and FS RDL 332 and the first device 300, the third device 600 may have a BS DD RDL 620 configured to provide lateral power connections and vertical signal connections. In other words, the via portion 614 and the vertical portion 624 configured to transmit the same non-power or data / content signals can be aligned along a vertical line. Compared to the second device 500 and stack bonding using the FS RDL 532 of FIG. 2A to provide lateral data / content signals, the FS RDL 632 of the third device 600 can be configured to provide vertical data / content signals. Therefore, the third device 600 can align its data / content signal pads with the device above or below it along a vertical line. In other words, the third device 600 can be configured to transmit through data / content signals in the vertical direction (e.g., without lateral displacement). The third device 600 may correspond to a multi-level stack bonding design. Figure 6B is a waterfall diagram 660 of a third assembly 650 according to one embodiment of the present technology. Similar to the stacked assembly and corresponding waterfall diagram described above, the waterfall diagram 660 can illustrate a plurality of devices 662 and a matching number of communication channels 664 that uniquely facilitate one of the devices 662. For the example illustrated in Figure 6B, the stacked assembly may include eight semiconductor memory devices 662 or chips (devices 0 to 7) having eight communication channels 664 (channels 0 to 7). For the multi-level stack and / or third assembly 650 of Figure 6A, the overall assembly (e.g., the third assembly 650) may have one or more device groups or hierarchical sets. In other words, each device group may contain devices corresponding to multiple communication hierarchies (e.g., memory location organization schemes). For the example illustrated in Figure 6B, the third assembly 650 may correspond to a two-level stack and contain a hierarchical set 680 including two types of devices corresponding to two hierarchies (e.g., hierarchical 0 and hierarchical 1). A multi-level stack may include one device configured to laterally transmit data / content signals (e.g., the top device in a hierarchy group), and the remaining devices may be configured to vertically transmit through signals without lateral displacement. In other words, the remaining devices may correspond to the multi-level stacking joint design described above in Figure 6A. Therefore, the corresponding cascading path 676 may laterally transmit along one designated device within hierarchy set 680 and vertically extend across other devices within hierarchy set 680. The lateral delivery device can correspond to the first device 300 in Figure 3A or the second device 500 in Figure 5A, and uses the respective BS DD RDL 320 in Figure 3A and / or the FS RDL 332 in Figure 3A or the BS DD RDL 520 in Figure 5A to deliver data / content signals laterally. The vertical delivery device can correspond to the third device 600. Using the example illustrated in waterfall diagram 660, the two-tier stacked design allows a first device 300 to be stacked above a third device 600 within each of the tiers 680. Therefore, each of the tiers 680 can laterally shift a selected set of signals (e.g., pass-through data / content signals) by a predetermined number of interface positions using the BS DD RDL 320 and / or FS RDL 332 of Figure 3A. The third device 600 can then route the selected set of signals along a vertical direction. Thus, each of the tiers 680 can shift the selected set of signals by a predetermined number (e.g., one or two) interface positions. Figures 7A to 7J are illustrations of various stages of an example process according to one embodiment of the present technology. The example process can be used to form one or more devices (e.g., the first device 300 of Figure 3A, the second device 500 of Figure 5A, and / or the third device 600 of Figure 6A). For example, the illustrated process may demonstrate the formation of a BS connection mechanism. Figure 7A illustrates an initial structure 700a of a semiconductor substrate 702 (e.g., a Si wafer) having a dielectric layer 706 (e.g., an ILD, such as SiO) thereon. The semiconductor substrate 702 may have an operational circuit system (e.g., operational circuit systems 340 / 540 / 640 corresponding to the figure) formed thereon (e.g., using dopants). The dielectric layer 706 may be formed on one of the opposite sides of the operational circuit system. Thus, the dielectric layer 706 may correspond to a back portion or BS of a subsequently generated device. In some embodiments, the semiconductor substrate 702 may have one or more silicon-permeable cavities 708. The silicon-permeable cavity 708 may correspond to an etched recess that can subsequently be occupied by a conductive material (e.g., the vertical portion of a BS DD RDL). Thus, the silicon-permeable cavity 708 may extend toward one or more electrical components or connections in an operating circuit system on the FS of the semiconductor substrate 702. Alternatively, the semiconductor substrate 702 may have one or more silicon-permeable cavities 708 that have been filled with a conductive material (e.g., copper). Figure 7B illustrates a structure 700b following a masking process. Structure 700b may have a patterned layer 710 (e.g., a mask, such as a photoresist) formed over the initial structure 700a of Figure 7A. The patterned layer 710 may include one or more corresponding portions of the underlying dielectric layer 706 exposed via openings 712. The via openings 712 may correspond to vertical portions of the BS DD RDL structure described above (e.g., vertical portion 324 of Figure 3A). In some embodiments, structure 700b may be formed by depositing or laminating an optical mask over the dielectric layer 706 and then (e.g., using light) removing portions thereof to form the via openings 712. In some embodiments, one or more of the via openings 712 may be located directly over the silicon through-cavity 708. Figure 7C illustrates a structure 700c following a first etching process. Structure 700c may have one or more partial vias 714 formed through corresponding via openings 712 as shown in Figure 7B. The partial vias 714 may partially extend through a thickness of the dielectric layer 706. The partial vias 714 can be formed by removing (e.g., using a chemical etchant or laser) portions of the dielectric layer 706 through the via openings 712. The removal process can be controlled, for example, by controlling the exposure to the removal mechanism, the amount or intensity of the removal mechanism, or a combination thereof, such that the partial vias 714 have a partial depth 716 less than the thickness of the dielectric layer 706. Therefore, the semiconductor substrate 702 and / or silicon cavity 708 of Figure 7B may be covered by the remaining portion of the dielectric layer 706. Figure 7D illustrates a structure 700d following a mask adjustment procedure. Structure 700d may have an updated patterned layer 718 (e.g., a mask, such as a photoresist) above structure 700c of Figure 7D. The updated patterned layer 718 can be formed by adjusting the patterned layer 710 of Figure 7B. For example, the updated patterned layer 718 may have an RDL opening 720 that can be formed by enlarging one or more via openings 712. In some embodiments, the updated patterned layer 718 can be formed by removing additional portions of the patterned layer 710 using the same removal mechanism used to form the initial via opening 712. The updated patterned layer 718 may be formed at locations corresponding to the lateral portions of the BS DD RDL (e.g., lateral portion 322 of Figure 3A) and has a shape corresponding to those lateral portions. Figure 7E illustrates a structure 700e following a second etching process. Structure 700e may have one or more patterned recesses 722. The patterned recesses 722 may be formed by removing the dielectric layer 706 through the updated patterned layer 718 using the same removal mechanism as in the first etching process. Each patterned recess 722 may have a lateral portion 722a and a vertical portion 722b. The lateral portion 722a may correspond to a portion of the recess in the dielectric layer 706 formed by removing a portion of the dielectric layer 706 through the RDL opening 720. The vertical portion 722b may be an extension of the partial via 714 in FIG. 7D and exposes the semiconductor substrate 702. In some embodiments, the etching process may leave a rounded corner 724 in the dielectric layer 706. Given the continuous opening between the vertical portion 722b and the lateral portion 722a, the patterned recess 722 may have a rounded corner 724 between the corresponding portions. Figure 7F illustrates a structure 700f following a fabrication process. Structure 700f may have one or more initial layers 726 formed above structure 700e of Figure 7E. For example, the initial layer 726 may comprise a diffusion barrier (e.g., a tantalum (Ta)-based barrier), a seed layer (e.g., a copper (Cu) initial layer), or a combination thereof. A deposition process (such as physical vapor deposition (PVD)) may be used to form the initial layer 726. Figure 7G illustrates a structure 700g following a conductor deposition process (such as a metal deposition or an electroplating process). Structure 700g may have a metallic material, such as Cu, deposited above structure 700f of Figure 7F to form a deposited structure 728. The deposited structure 728 may be formed based on deposited material attached to and formed above one or more initial layers 726 (such as seed layers). The deposited structure 728 may have portions corresponding to the shape / parts of structure 700f. For example, the deposited structure 728 may include one or more vertical extensions 730 extending along a vertical direction (e.g., toward the core 308 of FIG. 3A) and one or more lateral extensions 732 integrally joined by corresponding integral joints 734 (e.g., integral joint 326 of FIG. 3A or similar as described above). The deposited structure 728 may have an excess portion 738 above one or more portions of structure 700f. In some embodiments, the deposited structure 728 may have a rounded corner 736 included at the integral connector 734. The rounded corner 736 at the integral connector 734 may correspond to the shape of the structure 700f at the corresponding portion. For example, the rounded corner 736 may be formed due to a DD process used to shape the structure 700f, thereby shaping the deposited structure 728. Figure 7H illustrates a structure 700h following an excess removal process (such as a polishing process, an etching process, or a combination thereof) that removes the excess portion 738 of Figure 7G. For example, the excess removal process may include a chemical-mechanical planarization (CMP) process to form the BS DD RDL 320 from the deposited structure 728 of Figure 7G. Therefore, the vertical extension 730 of Figure 7G may correspond to the vertical portion 324, the lateral extension 732 of Figure 7G may correspond to the lateral portion 322, and the connector 734 of Figure 7G may correspond to the integral connector 326. Therefore, the integral connector 326 may include rounded corners 736. Furthermore, removing the excess portion 738 may expose portions of the initial layer 726 of Figure 7F (e.g., barrier layers located between or adjacent to the BS DD RDL 320). Figures 7I and 7J correspond to the steps of forming the BS DD pad-via structure 310 of Figure 3A over the BS DD RDL 320 of Figure 7H. Figure 7I illustrates a structure 700i following a capping layer deposition process. The deposited capping layer may correspond to a BS protective layer 348 or other protective (e.g., etch stop) layer. In some embodiments, the capping layer may be deposited via lamination, lithography, chemical and / or physical deposition, or similar methods. Furthermore, the deposited capping layer may be shaped, such as to form openings. The formed openings may include connector openings 740 exposing the corresponding top portion of the BS DD RDL 320. Figure 7J illustrates a structure 700j following one or more processes of the BS DD gasket-through-hole structure 310. The process of the BS DD gasket-through-hole structure 310 may correspond to the process of the BS DD RDL 320 in Figure 7H. For example, the process may be performed in parallel with the steps described above for Figures 7C to 7H. Figure 8 is a flowchart illustrating an example method 800 for manufacturing a semiconductor device (e.g., device 100 of Figure 1, the first / second / third device described above, and / or the corresponding assembly described above) according to an embodiment of the present technology. For example, example method 800 may correspond to the structure forming the BS DD pad-via structure 310 of Figure 3A, the BS DD RDL 320 of Figure 3A, the second device 500 of Figure 5A, and / or the third device 600 of Figure 6A. Example method 800 may correspond to the procedures described above and the structures illustrated in one or more of Figures 7A to 7J. In block 802, method 800 may include providing a semiconductor structure, such as a semiconductor wafer or substrate corresponding to core 308 of FIG. 3A and / or semiconductor substrate 702 of FIG. 7A. The semiconductor structure may have an active circuit or an FS and a BS. In block 804, method 800 may include forming an active circuit system (e.g., an active circuit system 340 of FIG. 3A or a corresponding portion of other devices described above) at or near the FS. The active circuit system may be formed by masking, depositing dopant, layering and / or forming other electrical components on or near the FS. In block 806, method 800 may further include forming an electrical connection to the FS, such as an FS RDL 332 of FIG. 3A or a corresponding portion of other devices described above. Forming an electrical connection to the FS may further include forming a TSV extending vertically through the thickness of the semiconductor (e.g., using a TSV of silicon-through-cavity 708 of FIG. 7A corresponding to vertical portion 324 of FIG. 3A or similar) by masking, etching and / or depositing conductive material. FS electrical connections can be formed by constructing IDL layers, forming patterned masks, depositing conductive materials according to predetermined patterns, and / or the like. In some embodiments, blocks 802 to 806 may correspond to front-end process (FEOL) processes. In block 810, method 800 may include forming a layer on the BS of a semiconductor structure, such as by depositing an IDL. Block 810 may correspond to the procedures described above for forming the initial structure 700a of FIG7A. In block 812, method 800 may include forming a mask, such as described above with respect to structure 700b of FIG7B. In block 812, method 800 may include performing a first etching process using a formed mask to partially etch portions of the ILD, as described above with respect to structure 700c of FIG. 7C. In block 814, method 800 may include performing a mask adjustment process corresponding to structure 700d of FIG. 7D. In block 816, method 800 may include a second etching process using an adjusted mask, as described above with respect to structure 700e of FIG. 7D. In block 818, method 800 may include a fabrication process for patterning the ILD prior to a deposition process. Block 818 may correspond to the process described with respect to structure 700f of FIG. 7F. Following fabrication, in block 820, method 800 may include a conductor deposition process corresponding to structure 700g of FIG. 7G. In block 822, method 800 may include an excess removal process to shape the deposited conductor, as described above with respect to structure 700h of FIG. 7H. In some embodiments, blocks 812 to 822 may correspond to a DD procedure such as for forming BS DD RDL 520. In block 830, method 800 may include forming another layer, such as an outermost set including BS DD pad-via structure 310. This other layer may be formed using one or more processes described above, such as those for blocks 810 to 822. For example, a DD process may be used to form an IDL having the BS DD pad-via structure 310 contained therein. Using a DD process to form BS DD RDL 520 and / or BS DD pad-via structure 310 allows the formation of a known semiconductor device using existing processes. Therefore, BS DD RDL 520 and / or BS DD pad-via structure 310 can provide additional routing complexity and signal density without requiring rework or otherwise significant changes to the manufacturing facility. Thus, BS DD RDL 520 and / or BS DD pad-via structure 310 can provide additional signal complexity with minimal or no increase in manufacturing cost / complexity. Figure 9 is a schematic diagram of a system including a device according to an embodiment of the present technology. Any of the aforementioned devices (e.g., memory devices) described above with respect to Figures 1 through 8 can be incorporated into any of numerous larger and / or more complex systems (a representative example of which is system 980 schematically shown in Figure 9). System 980 may include a memory device 900, a power supply 982, a driver 984, a processor 986, and / or other subsystems or components 988. Memory device 900 may include features substantially similar to those of the devices described above with respect to Figures 1 through 8, and therefore may include various features for performing a direct read request from a host device. The resulting system 980 can perform any of a wide range of functions, such as memory storage, data processing, and / or other suitable functions. Therefore, representative system 980 may include, but is not limited to, handheld devices (e.g., mobile phones, tablets, digital readers, and digital audio players), computers, vehicles, appliances, and other products. The components of system 980 may be housed in a single unit or distributed across multiple interconnected units (e.g., via a communication network). The components of system 980 may also include remote devices and any of a wide variety of computer-readable media. As will be understood from the foregoing, specific embodiments of the present technology have been described herein for illustrative purposes, but various modifications may be made without departing from the invention. Furthermore, specific aspects of the new technology described in the context of the specific embodiments may be combined or omitted in other embodiments. Moreover, although the advantages associated with specific embodiments of the new technology have been described in the context of those embodiments, other embodiments may also exhibit such advantages, and not all embodiments need to exhibit such advantages to fall within the scope of the present technology. Therefore, the present invention and related technologies may cover other embodiments not explicitly shown or described herein. In the embodiments illustrated above, the device has been described in the context of a DRAM device. However, devices configured according to other embodiments of the present technology may include other types of suitable storage media besides or replacing DRAM devices, such as devices with NAND-based or NOR-based non-volatile storage media (e.g., NAND flash memory), magnetic storage media, phase-change storage media, ferroelectric storage media, etc. As used herein, the term "processing" includes manipulating signals and data, such as writing or programming, reading, erasing, refreshing, adjusting or changing values, calculating results, executing instructions, assembling, transmitting, and / or manipulating data structures. The term "data structure" includes information configured as bits, words or codewords, blocks, files, input data, system-generated data (such as calculated or generated data), and program data. The embodiments described above are given in sufficient detail to enable those skilled in the art to make and use them. However, those skilled in the art should understand that the art may have additional embodiments and may be practiced without the several details of the embodiments described above with respect to Figures 1 to 9. 100: Device; 105: Command / Address (CA) Input Circuit; 110: Address Decoder; 115: Command Decoder; 120: Clock Input Circuit; 130: Internal Clock Circuit; 140: Column Decoder; 145: Row Decoder; 150: Memory Array; 155: Read / Write Amplifier; 160: Input / Output Circuit; 170: Internal Voltage Generator Circuit; 200: First Stacked Unit; 202: Interconnect; 212: Top Unit; 214: Bottom Unit; 222: Top Unit Pad; 224: Bottom Unit Pad; 230: Separation Distance; 234: Bottom Unit Through-Hole 250: Second stacked assembly 252: Interconnector 262: Top assembly 264: Bottom assembly 272: Top assembly pad 274: Bottom assembly pad 280: Separation distance 284: Bottom assembly through-hole 286: Reinforced layer (RDL) 300: First instance assembly 302: First backside (BS) connection mechanism 304: Backside (BS) 306: Frontside (FS) 308: Core 310: Dual damascene (DD) pad-through-hole structure 312: Pad portion 314: Through-hole portion 316: Integrated connector 320: Backside dual damascene reinforced layer (BS DD RDL) layer 322: Lateral portion 324: Vertical portion 326: Reinforced layer (RDL) integrated connector 332: Front reinforced layer (FS) RDL) 334: Lateral extension 336: Layer 338: Front vertical portion 340: Functional circuit system 348: First backside (BS) protective layer 350: First assembly 352: Stacking device / top device 354: Top pad 356: Front side (FS) of top device 360: Waterfall diagram 362: Semiconductor memory device 364: Communication channel 372: Top device 374: First peripheral channel 376: Cascade path 382: Bottom die 384: Relative peripheral channel 400: Plan view 402: Width 404: Length 406: Separation distance 4 12: Joint gasket cover portion 414: Joint gasket size 422: Top through-hole interface 424: Top through-hole size 432: Through-silicon via (TSV) interface 434: Through-silicon via (TSV) interface size 440: Through-silicon via (TSV) pitch size 500: Second device 502: Second back (BS) connection mechanism 504: Back (BS) 506: Front (FS) 508: Core 510: Dual-dotted (DD) gasket-through-hole structure 512: Gasket portion 514: Through-hole portion 516: Integrated connector 520: Back dual-dotted overlay (BS DD RDL) 522: Lateral portion 523: Gasket portion 524: Vertical portion 526: Overlay (RDL) integrated connector 532: Front overlay (FS)534: Lateral Extension; 538: Front Vertical Section; 540: Functional Circuit System; 550: Second Assembly; 552: Stacking Device; 560: Waterfall Diagram; 562: Semiconductor Memory Device; 564: Communication Channel; 576: Cascade Path; 600: Third Device; 602: Third Backside (BS) Connection Mechanism; 604: Backside (BS); 606: Front Side (FS); 608: Core; 610: Dual Dotting (DD) Pad-Through-Video Structure; 612: Pad Section; 614: Through-Video Section; 616: Integrated Connector; 620: Backside Dual Dotting Relay (BS DD) 622: Horizontal section; 623: Pad section; 624: Vertical section; 626: Reinforced Layer (RDL) integrated connector; 634: Front (FS) pad; 638: Front vertical section; 650: Third assembly; 652: Stacking device; 660: Waterfall diagram; 662: Semiconductor memory device; 664: Communication channel; 676: Cascade path; 680: Hierarchical assembly; 700a: Initial structure; 700b: Structure 700c: Structure 700d: Structure 700e: Structure 700f: Structure 7 00g: Structure 700h: Structure 700i: Structure 700j: Structure 702: Semiconductor substrate 706: Dielectric layer 708: Silicon through-hole 710: Patterned layer 712: Via opening 714: Partial via 716: Partial depth 718: Re-patterned layer 720: Re-laid layer (RDL) opening 722: Patterned recess 722a: Lateral portion 722b: Vertical portion 724: Rounded corners 726: Initial layer 728: Deposited structure 730: Vertical extension 732 734: Lateral extension; 736: Integrated connector; 738: Rounded corners; 740: Excess portion; 800: Connector opening; 802: Example method; 804: Block; 806: Block; 810: Block; 812: Block; 814: Block; 816: Block; 818: Block; 820: Block; 822: Block; 830: Block; 900: Memory device; 980: System; 982: Power supply; 984: Driver; 986: Processor; 988: Other subsystems or components; ADDR: Address signal. CK: Clock signal; CKF: Clock signal; CMD: Command signal; CS: Chip select signal; DBI: Data terminal; DL: Digital line; DMI: Data terminal; DQ: Data terminal; ICLK: Internal clock signal; ICMD: Internal command signal; RDQS: Data terminal; SAMP: Sensing amplifier; TG: Transfer gate; VDD: Power supply terminal; VDDQ: Power supply terminal; VSS: Power supply terminal; WL: Word line; XADD: Decoded column address signal; YADD: Decoded row address signal. Figure 1 is a block diagram of one of the devices according to one embodiment of the present technology. Figure 2A is a cross-sectional view of a first stacked device having a first connection configuration. Figure 2B is a cross-sectional view of a second stacked device having a second connection configuration. Figure 3A is a cross-sectional view of a first example device having a first backside (BS) connection mechanism according to an embodiment of the present technology. Figure 3B is a cross-sectional view of a first example device connected to a stacking device according to one embodiment of the present technology. Figure 3C is a waterfall diagram of a first stacked assembly according to one embodiment of the present technology. Figure 4 is a plan view of a redistribution layer associated with a BS connection mechanism according to one embodiment of the present technology. Figure 5A is a cross-sectional view of a second assembly having a second BS connection mechanism connected to a stacking device according to one embodiment of the present technology. Figure 5B is a waterfall diagram of a second assembly according to one embodiment of the present technology. Figure 6A is a cross-sectional view of a third assembly having a third BS connection mechanism connected to a stacking device according to one embodiment of the present technology. Figure 6B is a waterfall diagram of a third assembly according to one embodiment of the present technology. Figures 7A to 7J are illustrations of various stages of an example manufacturing process according to one embodiment of the present technology. Figure 8 is a flowchart illustrating an example method for manufacturing a semiconductor device having a BS delivery mechanism according to one embodiment of the present technology. Figure 9 is a schematic diagram of a system comprising a semiconductor device according to one embodiment of the present technology. 500: Second device 502: Second Back Side (BS) Connection Mechanism 504: Back side (BS) 506: Front (FS) 508: Core 510: Dual Inlay (DD) Gasket - Through-hole Structure 512: Padding section 514: Through-hole section 516: Integrated connector 520: Double-layered fabric backing (BS DD RDL) 522: Horizontal section 523: Padding section 524: Vertical section 526: Reinforced Layer (RDL) Integrated Connector 532: Front Relay Layer (FS RDL) 534: Lateral extension 538: Front vertical section 540: Functional Circuit System 550: Second Assembly 552: Stacking device

Claims

1. A semiconductor device comprising: A semiconductor substrate having a front portion opposite to a back portion; The circuitry system is formed in or on the semiconductor substrate and positioned closer to the front portion than the back portion; and an integral electrical connector that at least partially passes through the back portion, the integral electrical connector having a lateral portion and a vertical portion extending toward the front portion, wherein the lateral and vertical portions are integrally joined together, and wherein the conductive material of the integral electrical connector remains consistent and uninterrupted across the lateral and vertical portions.

2. The semiconductor device of claim 1, wherein the integrated electrical connector includes one or more features caused by a dual damascene process for forming the integrated electrical connector.

3. The semiconductor device as claimed in claim 2, wherein: The integrated electrical connector includes a back cover layer; the lateral portion is configured to provide an electrical connection extending along at least one lateral direction; and the vertical portion (1) extends at least partially through the semiconductor substrate to the front portion or (2) is electrically coupled to a silicon via that extends at least partially through the semiconductor substrate to the front portion, wherein the vertical portion is configured to provide the electrical connection along a vertical direction to the functional circuitry, the front portion, or a combination thereof.

4. The semiconductor device as claimed in claim 3, further comprising: A front redistribution layer is located on the front portion of the semiconductor substrate and opposite the back redistribution layer, wherein the front redistribution layer is configured to further extend the electrical connection along the at least one lateral direction.

5. The semiconductor device as claimed in claim 3, wherein: The operating circuit system is configured to transmit an internal processing signal to a first external circuit positioned facing the front portion of the semiconductor substrate; and the lateral portion of the back cover layer is configured to (1) receive a direct signal received from a second external circuit facing the back portion of the semiconductor device and (2) laterally shift the direct signal away from the internal processing signal.

6. The semiconductor device as claimed in claim 2, wherein: The integrated electrical connector includes a pad-through-hole structure; the lateral portion is configured to provide a mating pad configured to attach to an external pad or a connector; and the vertical portion is narrower than the lateral portion and electrically coupled to (1) at least partially extending through the semiconductor substrate to a silicon via of the front portion or (2) a reel disposed between the back portion and the lateral portion.

7. The semiconductor device of claim 2, wherein the one or more features of the dual damascene process include one or more rounded corners at an integral junction between the vertical and lateral portions.

8. The semiconductor device as claimed in claim 2, wherein: The integrated electrical connector includes a conductive metal material; and the one or more features of the dual damascene process include a uniform density of the conductive metal material across the vertical and horizontal portions, including an integrated joint between the vertical and horizontal portions.

9. The semiconductor device of claim 2, wherein the operating circuit system includes memory cells configured to store data.

10. The semiconductor device of claim 9, wherein the semiconductor device includes a dynamic random access memory (DRAM).

11. A three-dimensional integrated semiconductor device, comprising: A first device comprising (1) a first functional circuit system and (2) a first pad located on a bottom surface of the first device and configured to provide an external interface for the first functional circuit system; and a second device attached to the first device and located below the first device, the second device having a back portion facing the first device and opposite to a front portion, the second device further comprising: a second functional circuit system; a second functional pad located on the front portion and configured to provide an external interface for the second functional circuit system; a second receiving pad positioned on the back portion and coupled to the first pad, the second receiving pad being aligned with the second functional pad; and a second through pad positioned on the front portion and separated from the second functional pad in a lateral direction. A back cover layer is disposed between and coupled to the second receiving pad and the second through pad, the back cover layer having a transverse portion integrally integrated with a vertical portion, wherein the transverse portion extends across the transverse direction, and wherein the vertical portion extends from the transverse portion toward the front portion in a vertical direction for electrically coupling the transverse portion and the second through pad.

12. The three-dimensional integrated semiconductor device of claim 11, wherein the second functional pad includes a back pad-via structure, further including a vertical portion integral with the second functional pad and extending from the second functional pad toward the back redistribution layer for electrically coupling the second functional pad to the back redistribution layer.

13. The three-dimensional integrated semiconductor device of claim 12, wherein (1) the integral connection between the lateral portion and the vertical portion of the back pad-via structure and (2) the lateral portion and the vertical portion of the back redistribution layer is formed by using corresponding dual damascene processes to form the back pad-via structure and the back redistribution layer, respectively.

14. The three-dimensional integrated semiconductor device of claim 11, further comprising: A silicon through-hole (TSV) extends at least partially through a semiconductor core and between the back portion and the front portion. The TSV is connected to the vertical portion of the back cover layer and configured to electrically couple the lateral portion to the second through-hole pad.

15. The three-dimensional integrated semiconductor device of claim 11, wherein the vertical portion of the back cover layer is a TSV that at least partially extends through a semiconductor core and between the back portion and the front portion for electrically coupling the lateral portion to the second through pad.

16. The three-dimensional integrated semiconductor device of claim 11, further comprising: A front overlay is disposed between the second functional circuit system and a front surface exposing the second functional pad and the second through pad, wherein the front overlay extends a first portion of a lateral separation between the second receiving pad and the second through pad, and wherein the lateral portion of the back overlay extends a remaining portion of the lateral separation.

17. The three-dimensional integrated semiconductor device of claim 11, wherein the lateral portion of the back cover redistribution extends laterally separated between the second receiving pad and the second through pad.

18. The three-dimensional integrated semiconductor device of claim 11, further comprising: A complementary device is disposed between a first device and a second device, the complementary device comprising: a complementary receiving pad located on a top portion of one of the complementary devices and directly connected to the first pad; a complementary through pad located on a bottom portion of one of the complementary devices and electrically coupled to the complementary receiving pad, the complementary through pad being directly connected to the second receiving pad; a complementary action circuit system; and a complementary action pad located on the bottom portion and configured to provide an external interface for the complementary action circuit system, wherein the first device, the second device, and the complementary device are memory devices, wherein the first device is a level 1 device of a first memory hierarchy set and the complementary device is a level 0 device, and wherein the second device is a level 1 device of a second memory hierarchy set. The complementary receiving pad, the complementary function pad, the first pad, and the second receiving pad are positioned in a first region on a transverse plane parallel to the extension of the first, second, and complementary devices, wherein the first region is associated with a first communication channel, and the second function pad and the second through pad are positioned in a second region on the transverse plane, wherein the second region is associated with a second communication channel.

19. The three-dimensional integrated semiconductor device of claim 11, wherein the first pad of the first device is directly coupled to the second receiving pad of the second device.

20. A semiconductor memory device comprising a semiconductor substrate having a front portion opposite a back portion; one or more first back side (BS) dielectric layers disposed on the back portion; a BS redistribution layer (RDL) structure disposed in the one or more first BS dielectric layers, the BS RDL structure having a lateral extension integrally coupled with a vertical portion extending toward the front portion; one or more second BS dielectric layers disposed above the one or more first BS dielectric layers; a pad-via structure disposed in the one or more second BS dielectric layers, the pad-via structure including a pad portion and a vertical portion integrally formed therewith, wherein the pad portion is configured to receive a direct signal from an external device stacked on top of the semiconductor memory device, wherein the vertical portion extends from the pad portion for electrically transmitting the direct signal to the BS RDL structure; An active circuit system formed in or on the semiconductor substrate and positioned closer to the front portion than the back portion; an active pad exposed on the front of one of the semiconductor memory devices and configured to provide an external communication interface for the active circuit system, wherein the active pad is aligned with the pad portion along a vertical line; a through pad exposed on the front and electrically coupled to the vertical portion of the BS RDL, wherein the through pad is separated from the active pad along a lateral direction at least partially corresponding to one of the lateral extensions of the BS RDL structure.

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