Stripping device and stripping method

Abstract

An embodiment provides a peeling apparatus and a peeling method capable of peeling symmetrically with respect to the direction of progress. The peeling apparatus of this embodiment peels an adhesive substrate formed by bonding a first substrate and a second substrate into the aforementioned first substrate and the aforementioned second substrate. It includes a first suction cup that holds the aforementioned first substrate in the adhesive substrate; a second suction cup that holds the aforementioned second substrate in the adhesive substrate and moves the aforementioned second substrate along a first direction away from the substrate surface of the aforementioned first substrate; an adjustment mechanism capable of adjusting the tilt angle of the aforementioned second suction cup, the tilt angle being an inclination in a direction orthogonal to a setting line provided on the holding surface of the aforementioned second substrate relative to the second suction cup; and a control unit that controls the aforementioned adjustment mechanism to make the peeling process symmetrical with respect to the aforementioned setting line.

Description

[Technical Field]

[0001] The embodiments of the present invention relate to a stripping device and a stripping method. [Previous Technology]

[0002] In the manufacturing process of semiconductor devices, substrates are sometimes bonded together. If two substrates are bonded while they are shifted from each other, the two substrates may peel off.

[0003] As a method for peeling two substrates, a method can be used that peels along a direction of progress from one substrate to the other. In this case, if the peeling is performed asymmetrically with respect to the direction of progress, stress will be concentrated at some locations, which may lead to cracking of the substrate. [Summary of the Invention]

[0004] The problem to be solved by the present invention is to provide a peeling device and peeling method that can peel symmetrically with respect to the direction of progress.

[0005] The peeling device according to the embodiment is a peeling device for peeling an adhesive substrate formed by bonding a first substrate and a second substrate into the aforementioned first substrate and the aforementioned second substrate, comprising: a first suction cup that holds the aforementioned first substrate in the aforementioned adhesive substrate; a second suction cup that holds the aforementioned second substrate in the aforementioned adhesive substrate and moves the aforementioned second substrate along a first direction away from the substrate surface of the aforementioned first substrate; an adjustment mechanism that can adjust the tilt of the aforementioned second suction cup, the aforementioned tilt being a tilt in a direction orthogonal to a setting line set on the holding surface of the aforementioned second substrate of the aforementioned second suction cup; and a control unit that controls the aforementioned adjustment mechanism so that the peeling process is symmetrical with respect to the aforementioned setting line.

Implementation Method

[0007] The embodiments are described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below.

[0008] Furthermore, the constituent elements in the following embodiments include elements that can be readily conceived by those skilled in the art or substantially the same elements.

[0009] [Embodiment 1] (Example of the configuration of the peeling device) The peeling device 1 of Embodiment 1 will be described using Figures 1 to 10.

[0010] FIG1 is a schematic side view showing the configuration of the peeling device 1 according to Embodiment 1. FIG2 is a schematic cross-sectional view of the bonding substrate T according to Embodiment 1. In FIG2, the shaded lines are omitted for ease of observation.

[0011] The peeling device 1 shown in FIG1, for example as shown in FIG2, is a device capable of peeling a bonding substrate T to which a first substrate W1 and a second substrate W2 are bonded, into a peeling process of the first substrate W1 and the second substrate W2.

[0012] In this specification, the first substrate W1 will be referred to as "lower wafer W1" and the second substrate W2 will be referred to as "upper wafer W2". That is, the lower wafer W1 is an example of the first substrate and the upper wafer W2 is an example of the second substrate.

[0013] Furthermore, in this specification, as shown in FIG2, the substrate surface of the lower wafer W1 that is bonded to the upper wafer W2 is marked as "bonding surface W1j", and the substrate surface opposite to the bonding surface W1j is marked as "non-bonding surface W1n". Similarly, the substrate surface of the upper wafer W2 that is bonded to the lower wafer W1 is marked as "bonding surface W2j", and the substrate surface opposite to the bonding surface W2j is marked as "non-bonding surface W2n". The lower wafer W1 and the upper wafer W2 can be bonded, for example, chemically or with an adhesive.

[0014] In addition, in this specification, the predetermined direction along the bonding surface of the bonding substrate T held in the peeling device 1 is referred to as the Y direction. The Y direction is also the direction along the line connecting the center of the body portion 211 of the elastic member 21 (described later) and the peeling initiation portion 40. The direction from the peeling initiation portion 40 to the center of the body portion 211 is defined as the positive Y direction, and the opposite direction is defined as the negative Y direction. The vertical direction of the peeling device 1 is defined as the Z direction. At this time, the upward direction is defined as the positive Z direction, and the downward direction is defined as the negative Z direction. The Y direction and the Z direction are orthogonal to each other. In addition, the direction along the bonding surface of the bonding substrate T, and the direction that intersects the Y direction and the Z direction, is defined as the X direction. At this time, when viewed from the positive Z direction, that is, when looking down at the peeling device 1, the positive X direction and the negative X direction are defined as the positive X direction, the positive Y direction, the negative X direction, and the negative Y direction arranged in a counterclockwise direction. The X direction is an example of the second direction, and the Z direction is an example of the first direction.

[0015] As shown in FIG1, the peeling device 1 includes a first suction cup 10, a second suction cup 20, a holding part 30, a peeling initiation part 40, multiple lifting mechanisms 50, a suction cup support part 60, multiple adjustment mechanisms 70, a sensor SN, and a control part 100.

[0016] The first suction cup 10 is disposed at the lower part of the peeling device 1 and holds the lower wafer W1 of the bonding substrate T that is loaded into the peeling device 1. Specifically, the first suction cup 10 has a body part 11, a support member 12 and a rotation lifting mechanism 13.

[0017] The main body 11 is formed of a metal component such as aluminum, which is approximately circular in shape. An adsorption surface 101 is provided on the upper surface of the main body 11. The adsorption surface 101 is formed to have a diameter approximately the same as that of the lower wafer W1. The adsorption surface 101 is formed, for example, of a porous resin component such as PCTFE (polychlorotrifluoroethylene). An attraction space 102 is formed inside the main body 11, which communicates with the outside through the adsorption surface 101. The attraction space 102 is connected to an air suction device 104 such as a vacuum pump via an air suction pipe 103.

[0018] The first suction cup 10 uses the negative pressure generated by the suction of the suction device 104 to adsorb the non-bonding surface W2n of the lower wafer W1 onto the adsorption surface 101. As a result, the lower wafer W1 is held in the body portion 11.

[0019] In addition, the first suction cup 10 is supported by the support member 12 and the rotary lifting mechanism 13. The rotary lifting mechanism 13 rotates the main body 11 by rotating the support member 12 about a vertical axis. The rotary lifting mechanism 13 moves the support member 12 in the vertical direction, thereby raising and lowering the main body 11.

[0020] The second suction cup 20 is disposed above the first suction cup 10 and holds the upper wafer W2 in the bonding substrate T of the lifting device 1. The second suction cup 20 has an elastic member 21 and a plurality of suction parts 22.

[0021] The elastic member 21 is formed of a thin plate-shaped metal member. The elastic member 21 is disposed above the upper wafer W2 and opposite to the upper wafer W2.

[0022] A plurality of adsorption portions 22 are disposed on the lower surface of the elastic member 21. Each adsorption portion 22 is connected to an air suction device 224 such as a vacuum pump via an air suction pipe 223. Specifically, the adsorption portion 22 has: an elastic body 221 fixed to the lower surface of the elastic member 21; and an adsorption pad 222 disposed at the lower part of the elastic body 221.

[0023] The adsorption pad 222 adsorbs the non-bonded surface W2n of the wafer W2 by the attractive force generated by the suction device 224. That is, the elastic member 21 holds the wafer W2 by the adsorption pad 222 and the elastomer 221.

[0024] The elastomer 221 is formed of a component such as rubber. The elastomer 221 stretches and expands in response to the stress applied in the Z direction to the upper wafer W2 adsorbed by the adsorption pad 222.

[0025] The elastic member 21 is connected to the lifting mechanism 50. The upper wafer W2 held by the elastic member 21 is moved upward by the movement of the lifting mechanism 50. As a result, the lower wafer W1 and the upper wafer W2 are separated.

[0026] At this time, a stress corresponding to the ease of peeling from the lower wafer W1 is applied to the upper wafer W2. For example, the more difficult the peeling is, the greater the downward stress applied to the upper wafer W2. As the downward stress applied to the upper wafer W2 increases, the elastic body 221 elongates. The distance between the upper wafer W2 and the elastic member 21 changes according to the amount of elongation and contraction of the elastic body 221.

[0027] The holding part 30 is disposed above the second suction cup 20, and receives and holds the stripped upper wafer W2 from the second suction cup 20. The holding part 30 includes: a body part 31; a plurality of suction pads 32; and a lifting mechanism 34.

[0028] The main body 31 is a cylindrical component that is inserted into the opening 215 of the elastic member 21. A plurality of suction pads 32 are provided at the lower part of the main body 31. The plurality of suction pads 32 are configured to hold the non-bonding surface W2n of the upper wafer W2. A lifting mechanism 34 moves the main body 31 vertically, thereby raising and lowering the plurality of suction pads 32. The lifting mechanism 34 is, for example, supported by a suction cup support 60.

[0029] The suction cup support 60 is a plate-shaped member extending in the XY direction and disposed above the second suction cup 20. The suction cup support 60 is supported by a fixing member (not shown) mounted on the top of the peeling device 1.

[0030] The peel initiation section 40 is disposed on the negative Y-direction side relative to the second suction cup 20. The peel initiation section 40 forms a peel start portion on the side surface of the bonding substrate T, which serves as a trigger for peeling the upper wafer W2 and the lower wafer W1. Specifically, the peel initiation section 40 has a blade portion 41, a moving mechanism 42, and a lifting mechanism 43.

[0031] The blade portion 41 has a sharp member 41a and a support portion 41b. The sharp member 41a is, for example, a flat blade, which is supported by the support portion 41b, such that the cutting edge protrudes in the direction along the mating surface of the substrate T.

[0032] The peeling initiation unit 40 adjusts the height position of the blade portion 41 using the lifting mechanism 43, and then moves the blade portion 41 horizontally using the moving mechanism 42. Furthermore, the peeling initiation unit 40 causes the sharp member 41a of the blade portion 41 to contact the junction of the upper wafer W2 and the lower wafer W1 exposed on the side surface of the bonding substrate T. As a result, a peeling start point is formed on the side surface of the bonding substrate T on the negative Y direction side.

[0033] FIG3 is a schematic plan view of the second suction cup 20 of Embodiment 1. More specifically, FIG3 is a view of the second suction cup 20 viewed from above.

[0034] As shown in FIG3, the elastic member 21 of the second suction cup 20 has a body portion 211, a plurality of (two in this case) first extension portions 212 and a plurality of (two in this case) second extension portions 213.

[0035] The body portion 211 is the part of the elastic member 21 that faces the upper wafer W2. The body portion 211 is formed into a generally circular shape with a diameter approximately the same as that of the upper wafer W2. Near the center of the body portion 211, an opening 215 is formed for the holding portion 30 to pass through. In addition, a plurality of (six in this case) of the aforementioned adsorption portions 22 are disposed on the lower surface 214 of the body portion 211. The lower surface 214 is an example of a holding surface.

[0036] Adsorption portions 22a to 22c of the six adsorption portions 22 are disposed on the periphery of the outer periphery of the lower surface 214 of the main body 211 in the negative Y direction. Adsorption portions 22b and 22c of these three are arranged side-by-side along the X direction, separated by a setting line SL. Adsorption portions 22d to 22e are arranged side-by-side along the X direction, separated by a setting line SL, around the periphery of the opening 215. Adsorption portion 22f is disposed on the outer periphery of the lower surface 214 in the positive Y direction. That is, the six adsorption portions 22 are arranged from the negative Y direction to the positive Y direction in the order of adsorption portions 22a to 22c, 22d to 22e, and 22f.

[0037] Furthermore, the adsorption portion 22a is close to the peeling start point formed by the sharp member 41a of the blade portion 41. In other words, the sharp member 41a forms a peeling start point near the adsorption portion 22a.

[0038] In addition, although an example of providing six adsorption portions 22 on the body portion 211 is shown here, the number of adsorption portions 22 provided on the body portion 211 is not limited to six.

[0039] The two first extensions 212 are portions of the outer periphery of the main body 211 that extend outward along the Y direction. Specifically, the first extension 212a of the two first extensions 212 extends a portion of the outer periphery of the main body 211 on the negative Y direction side towards the negative Y direction side. The other first extension 212b extends a portion of the outer periphery of the main body 211 on the positive Y direction side towards the positive Y direction side. A lifting mechanism 50a is connected to the front end of the first extension 212a, and a lifting mechanism 50b is connected to the front end of the first extension 212b. That is, the lifting mechanisms 50a and 50b are arranged along the Y direction.

[0040] Lifting mechanisms 50a and 50b each have a support member 51 and a moving mechanism 52 (Fig. 1). The support member 51 is the part that is connected to the first extensions 212a and 212b respectively. The moving mechanism 52 is fixed to the upper part of the suction cup support 60, so that the support member 51 connected to the lower part can be raised and lowered. Thus, the first extensions 212a and 212b can be raised and lowered.

[0041] The lifting mechanisms 50a and 50b perform the above-mentioned actions according to the instructions of the control unit 100. For example, when the lifting mechanism 50a performs the above-mentioned actions, the first extension 212a is pulled upward, and in conjunction with this, the end of the main body 211 on the negative Y direction side is lifted. By lifting the negative Y direction side of the main body 211, the end of the upper wafer W2 held on the lower surface 214 of the main body 211 is also pulled upward.

[0042] A peeling start portion is formed on the side surface of the substrate T on the negative Y direction side. The above-mentioned operation is performed by the lifting mechanism 50a, and peeling begins from the negative Y direction side. Therefore, peeling is performed along the line connecting the lifting mechanism 50a and the lifting mechanism 50b. Hereinafter, the line connecting the lifting mechanism 50a and the lifting mechanism 50b will be referred to as the setting line SL. The setting line SL is also a line along the Y direction.

[0043] Figure 4 is a diagram illustrating the peeling process relative to the set line SL in Embodiment 1.

[0044] Figures 4(a) and 4(b) are views of the second chuck 20 held with the upper wafer W2 in place, viewed from above. The arrows in Figures 4(a) and 4(b) indicate the direction of the stripping process. Furthermore, the dashed lines in Figures 4(a) and 4(b) represent the boundary between the area where the upper wafer W2 is stripped from the lower wafer W1 and the area where the upper wafer W2 is not stripped. That is, relative to the dashed lines, the area on the direction of the stripping process is the area where the upper wafer W2 is not stripped, and the opposite side is the area where the upper wafer W2 has been stripped.

[0045] Ideally, as shown in FIG4(a), the stripping of the upper wafer W2 should be performed symmetrically with respect to the set line SL. However, in practice, as shown in FIG4(b), the stripping may be performed asymmetrically with respect to the set line SL. For example, as shown in the example of FIG4(b), if no stripping is performed on the negative side of X compared to the positive side of X, stress concentration sites will be generated on the negative side of X, which may lead to substrate cracking.

[0046] The peeling device 1 of Embodiment 1 is provided with an adjustment mechanism 70, which is used to adjust the peeling process in the direction (X direction) intersecting the set line SL. The adjustment mechanism 70 is connected to the front ends of the two second extensions 213.

[0047] Referring back to Figure 3, the two second extensions 213 are portions of the outer periphery of the main body 211 that extend outward along the X direction. More specifically, the second extension 213a of the two second extensions 213 extends a portion of the outer periphery of the main body 211 on the negative X direction side toward the negative X direction side. The other second extension 213b extends a portion of the outer periphery of the main body 211 on the positive X direction side toward the positive X direction side. The front end of the first extension 213a is connected to the adjustment mechanism 70a, and the front end of the second extension 213b is connected to the adjustment mechanism 70b. That is, the adjustment mechanisms 70a and 70b are arranged along the X direction.

[0048] Adjustment mechanisms 70a and 70b (adjustment mechanism 70) each have a support member 71 and a moving mechanism 72 (Fig. 1). The support member 71 is the part that is connected to the second extensions 213a and 213b respectively. The moving mechanism 72 is fixed to the upper part of the suction cup support 60, so that the support member 71 connected to the lower part can be raised and lowered. As a result, the second extensions 213a and 213b can be raised and lowered.

[0049] Adjustment mechanisms 70a and 70b perform the above-mentioned actions according to the instructions of control unit 100. Specifically, either of the two adjustment mechanisms 70 performs the above-mentioned actions according to the instructions of control unit 100.

[0050] For example, when the adjustment mechanism 70a performs the above-described operation, the second extension 213a is pulled upward, and in conjunction with this, the end of the main body 211 on the negative X-direction side is lifted. That is, the second suction cup 20 is tilted with the negative X-direction side facing upward. By lifting the negative X-direction side of the second suction cup 20, the negative X-direction side of the upper wafer W2 is also pulled upward. As a result, the upper wafer W2 can be peeled off towards the negative X-direction side.

[0051] On the other hand, for example, when the adjustment mechanism 70b performs the above-described operation, the second extension 213b is pulled upward, and in conjunction with this, the outer periphery of the main body 211 on the positive X-direction side is lifted. That is, the second suction cup 20 is tilted with the positive X-direction side facing upward. By lifting the positive X-direction side of the second suction cup 20, the positive X-direction side of the upper wafer W2 is also pulled upward. As a result, the upper wafer W2 can be peeled off towards the positive X-direction side.

[0052] In addition, a plurality of sensors SN (here, 12) are disposed on the lower surface 214 of the body portion 211. The sensors SN are, for example, range sensors. The sensors SN are disposed at positions overlapping with a plurality of measurement points MPA provided on the lower surface 214 of the body portion 211, and measure the distance L between the lower surface 214 and the non-bonded surface W2n of the upper wafer W2 at each measurement point MPA (FIG. 1). The sensors SN transmit the measurement result of the distance L to the control unit 100.

[0053] As shown in FIG3, a plurality of (here, 12) measuring points MPA are arranged in a circular shape along the outer periphery of the lower surface 214 of the main body 211. The 12 measuring points MPA form multiple pairs separated by a setting line SL, and each of the pairs of measuring points MPA is arranged along the X direction. That is, the pairs of measuring points MPA are arranged symmetrically across the setting line SL.

[0054] For example, in the example shown in Figure 3, measurement points MPA8 and MPA10, measurement points MPA7 and MPA11, measurement points MPA6 and MPA12, measurement points MPA1 and MPA5, and measurement points MPA2 and MPA4 are each paired. Furthermore, these multiple pairs (five pairs in this case) are arranged from the negative Y direction side to the positive Y direction side. Measurement points MPA1 to MPA12 are examples of the first and second points.

[0055] The control unit 100 is configured as a computer equipped with a CPU (Central Processing Unit), ROM (Read-Only Memory), RAM (Random Access Memory), etc. (not shown), and controls the entire stripping device 1. For example, the control unit 100 controls the adjustment mechanism 70 based on the measurement result of the distance L obtained from the sensor SN. In addition, the control processing of the adjustment mechanism 70 by the control unit 100 will sometimes be referred to as tilt adjustment processing.

[0056] Figure 5 is a diagram used to illustrate the tilt adjustment process of Embodiment 1.

[0057] Figures 5(a) and 5(b) are schematic cross-sectional views of a portion of the peeling device 1 including a section along line AA in Figure 3, and are diagrams showing the state in which the substrate T is held. The front side of the page represents the negative direction of Y, and the back side of the page represents the positive direction of Y. In addition, in Figures 5(a) and 5(b), for ease of explanation, the configuration of the adsorption part 22 and the sharp member 41a, etc., which are not necessarily included in the same cross section, may also be shown.

[0058] Specifically, when the control unit 100 obtains the distance L at each measurement point MPA from the sensor SN, it calculates the difference in distance L between pairs of measurement points MPA. The control unit 100 determines whether the stripping of the upper wafer W2 is performed symmetrically relative to the set line SL based on the absolute value of the difference in distance L.

[0059] As described above, the distance L varies depending on the amount of expansion and contraction of the adsorption portions 22a to 22f. The amount of expansion and contraction of the adsorption portions 22a to 22f varies depending on the ease or difficulty of peeling off the lower wafer W1 and the upper wafer W2. Therefore, by obtaining the difference in distance L between a pair of measurement points MPA set at symmetrical positions across the set line SL, it is possible to determine whether the peeling is performed symmetrically with respect to the set line SL.

[0060] More specifically, when the absolute value of the difference between the distances L between all pairs of multiple measurement points MPA is less than a predetermined threshold, the control unit 100 determines that the stripping is performed symmetrically with respect to the set line SL. On the other hand, if the absolute value of the difference between the distances L between at least one pair of multiple measurement points MPA exceeds the predetermined threshold, the control unit 100 determines that the stripping is not performed symmetrically with respect to the set line SL.

[0061] Furthermore, the control unit 100 determines, based on the sign of the difference, which side of the set line SL is progressing better in terms of peeling progress—the positive X-direction side or the negative X-direction side. For example, consider the case where the control unit 100 calculates the difference by subtracting the detection value detected by the sensor SN installed on the negative X-direction side from the detection value detected by the sensor SN installed on the positive X-direction side. If the sign of the difference is positive, it is determined that peeling on the positive X-direction side has not progressed. If the sign of the difference is negative, it is determined that peeling on the negative X-direction side has not progressed.

[0062] For example, as shown in FIG5(a), suppose the distance L of the measurement point MPA12 set on the negative direction side of X across the setting line SL is greater than the distance L of the measurement point MPA6 set on the positive direction side of X. When the distance L of the measurement point MPA6 is subtracted from the distance L of the measurement point MPA6, the sign of the difference becomes negative. The control unit 100 determines that, compared with the positive direction side of X, the peeling on the negative direction side of X has not been performed. In addition, the determination based on the above difference is only one example and is not limited to this.

[0063] The control unit 100 controls the adjustment mechanism 70 based on the above determination result.

[0064] Specifically, when the control unit 100 determines that the stripping is not performed symmetrically with respect to the set line SL, it activates the adjustment mechanism 70 provided on the side where the stripping is not performed, causing the second suction cup 20 to tilt.

[0065] For example, as shown in FIG5(b), the control unit 100 activates the adjustment mechanism 70a disposed on the negative X side, so that the second suction cup 20 is tilted so that the negative X side is upward. As a result, the negative X side of the upper wafer W2 is pulled upward, so that the stripping of the negative X side is performed.

[0066] On the other hand, for example, if the control unit 100 determines that the stripping is performed symmetrically with respect to the set line SL, it does not control the adjustment mechanisms 70a and 70b.

[0067] As described above, in the tilt adjustment process, the control unit 100 controls the adjustment mechanism 70 based on the difference in distance L to adjust the tilt of the second suction cup 20 relative to the X direction. Thus, the peeling is performed symmetrically relative to the set line SL. At this time, the control unit 100 can also adjust the angle of the second suction cup 20 based on the magnitude of the difference in distance L.

[0068] Furthermore, here, the control unit 100 determines the symmetry of the stripping based on whether the difference in distance L between at least one pair of multiple measurement points MPA is greater than a predetermined threshold, but the present invention is not limited thereto. For example, when the sum of the absolute values ​​of the differences in distance L between multiple measurement points MPA exceeds the predetermined threshold, the control unit 100 can determine that the stripping is not progressing symmetrically with respect to the set line SL, and when the sum is less than the predetermined threshold, it can determine that the stripping is progressing symmetrically.

[0069] Furthermore, the control unit 100 performs the aforementioned tilt adjustment process, for example, at predetermined intervals during the period from the start to the end of the peeling process. This allows the progress of peeling in the direction intersecting the setting line SL (X direction) to be adjusted based on the progress of peeling along the setting line SL.

[0070] In addition, the stripping device 1 also includes a plurality of lifting pins 19 (see FIG10) for supporting the bonding substrate T and the stripped lower wafer W1. The plurality of lifting pins 19 are inserted into through holes (not shown) formed through the first suction cup 10 and are configured to move freely up and down via a lifting mechanism (not shown). The plurality of lifting pins 19 are used to temporarily support the bonding substrate T and the lower wafer W1 when the bonding substrate T is brought in and when the stripped lower wafer W1 is taken out.

[0071] (Peeling Method) Next, the peeling method of the bonding substrate T will be described using Figures 6 to 11.

[0072] Figures 6-8 and 10-11 are diagrams showing a portion of the sequence of the peeling process using the peeling device 1 of Embodiment 1. More specifically, Figures 6-8 and 10-11 are side views of the peeling device 1 along the Y direction. Furthermore, Figure 9 is a flowchart showing the flow of the tilt adjustment process of Embodiment 1. The tilt adjustment process is performed as part of the peeling process.

[0073] First, as shown in FIG. 6, when the bonding substrate T is moved into the peeling device 1, the control unit 100 places the bonding substrate T on the adsorption surface 101, causing the non-bonding surface W1n of the lower wafer W1 to be adsorbed onto the adsorption surface 101. Thus, the lower wafer W1 is held. Next, the control unit 100 moves the blade portion 41 in the positive Y direction, pressing the sharp member 41a against the side of the bonding substrate T on the negative Y direction side. As a result, a peeling start portion is formed.

[0074] Next, in FIG7, the control unit 100 lowers the adsorption pad 222 of the second suction cup 20 to the vicinity of the upper wafer W2, adsorbing the non-bonded surface W2n of the upper wafer W2. As a result, the upper wafer W2 is held.

[0075] Next, in FIG8, the control unit 100 controls the lifting mechanism 50a to pull the first extension 212a upward. As a result, the negative Y-direction side of the body 211 is pulled upward, and the upper wafer W2 begins to be peeled from the lower wafer W1, starting from the peeling start point. When peeling begins, the sensor SN measures the distance L between the lower surface 214 and the non-bonded surface W2n of the upper wafer W2. The sensor SN transmits the distance L at each measurement point MPA as the measurement result to the control unit 100.

[0076] The control unit 100 performs tilt adjustment processing. As shown in FIG9, the control unit 100 obtains the measurement result of distance L from the sensor SN (S1).

[0077] Next, the control unit 100 determines whether the stripping is performed symmetrically relative to the set line SL based on the measurement results (S2). Specifically, the control unit 100 determines whether the stripping is performed symmetrically based on the absolute value of the difference between the distances L between pairs of measurement points MPA. If the control unit 100 determines that the stripping is being performed symmetrically (S2: Yes), the process proceeds to step S6.

[0078] If the control unit 100 determines that the stripping is not being performed symmetrically (S2: No), the control unit 100 determines whether the stripping is being performed on the positive X-direction side (S3). Specifically, the control unit 100 determines, based on the sign of the difference, whether the stripping is progressing more on the positive X-direction side or the negative X-direction side relative to the set line SL.

[0079] When the control unit 100 determines that peeling on the positive side of X is in progress (S3: Yes), the control unit 100 activates the adjustment mechanism 70a connected to the negative side of X and tilts the second suction cup 20 so that the negative side of X is upward (S5). As a result, peeling on the negative side of X is performed.

[0080] On the other hand, if the control unit 100 does not determine that peeling on the positive side of X is in progress (S3: No), that is, if it determines that peeling on the negative side of X is in progress, the control unit 100 activates the adjustment mechanism 70b connected to the positive side of X and tilts the second suction cup 20 so that the positive side of X is upward (S4). As a result, peeling on the positive side of X is performed.

[0081] The control unit 100 determines whether the stripping of the upper wafer W2 has ended (S6). If the control unit 100 determines that the stripping has not ended (S6: No), the process returns to S1. When the control unit 100 determines that the stripping has ended (S6: Yes), the tilt adjustment process ends.

[0082] In Figure 10, the control unit 100 raises the plurality of lifting pins 19 supporting the lower wafer W1 to the junction position. Then, the control unit 100 removes the stripped lower wafer W1 from the stripping device 1.

[0083] In Figure 11, the control unit 100 controls the lifting mechanism 34 to lower the adsorption pad 32 of the holding part 30 to the vicinity of the upper wafer W2, causing the adsorption pad 32 to adsorb the non-bonding surface W1n of the upper wafer W2. Next, the adsorption pad 222 of the second suction cup 20 is released from the upper wafer W2. As a result, the upper wafer W2 is held by the adsorption pad 32 of the holding part 30. Next, the control unit 100 removes the peeled upper wafer W2 from the peeling device 1. The peeling process of Embodiment 1 is now complete.

[0084] (Summary) The stripping apparatus 1 of Embodiment 1 includes: a first suction cup 10 that holds a lower wafer W1; a second suction cup 20 that holds an upper wafer W2 and moves it upward; an adjustment mechanism 70 that can adjust the tilt of the second suction cup 20 in a direction orthogonal to a setting line SL set on the second suction cup 20; and a control unit 100. The control unit 100 controls the adjustment mechanism 70 so that the stripping process is symmetrical with respect to the setting line SL.

[0085] As described above, for example, by adjusting the second suction cup 20, the side where the peeling has not progressed is tilted so that it faces upward relative to the set line SL, thereby allowing the side of the upper wafer W2 where the peeling has not progressed to move upward. As a result, peeling of the side that has not been peeled can be performed. As a result, peeling can be performed symmetrically relative to the set line SL, and substrate breakage can be suppressed.

[0086] [Embodiment 2] The stripping device of Embodiment 2 will be described using Figures 12 and 13.

[0087] FIG12 is a schematic plan view of the suction cup support 60 of Embodiment 2. More specifically, FIG12 is a view of the suction cup support 60 viewed from above. Furthermore, FIG13 is a diagram used to explain the tilt adjustment process of Embodiment 2. More specifically, FIG13(a) and FIG13(b) are schematic cross-sectional views including a portion of the peeling device including a section taken along line BB in FIG12, wherein the front side of the page shows the negative direction side of Y, and the back side of the page shows the positive direction side of Y.

[0088] In Embodiment 1 described above, the peeling device 1 determines the symmetry of the peeling progress relative to the set line SL based on the distance L between the lower surface 214 of the elastic member 21 and the non-bonding surface W2n of the upper wafer W2. Conversely, the peeling device in Embodiment 2 determines the symmetry of the peeling progress relative to the set line SL based on the distance M between the upper surface 220 of the elastic member 21 and the lower surface 610 of the suction cup support 60. Furthermore, the same reference numerals are sometimes used for components identical to those in Embodiment 1 described above, and their descriptions are omitted.

[0089] As illustrated in FIG1, the suction cup support portion 60 supporting the second suction cup 20 is disposed above the second suction cup 20. The suction cup support portion 60 is a plate-shaped member extending in the XY direction. That is, the suction cup support portion 60 has a surface facing the elastic member 21.

[0090] As shown in Figures 12, 13(a), and (b), a plurality of measuring points MPB (here, part 12) are arranged in a circular shape on the outer periphery of the lower surface 610 of the suction cup support 60 where it overlaps with the main body 211. The 12 measuring points MPB form multiple pairs separated by a setting line SL, and each pair of measuring points MPB is arranged along the X direction.

[0091] For example, in the example shown in Figure 12, measurement points MPB8 and MPB10, measurement points MPB7 and MPB11, measurement points MPB6 and MPB12, measurement points MPB1 and MPB5, and measurement points MPB2 and MPB4 form pairs. Measurement points MPB1 to MPB12 are examples of the first and second points.

[0092] The sensor SN is positioned at a location overlapping with measurement points MPB1 to MPB12. The sensor SN measures the distance M between the lower surface 610 of the suction cup support 60 and the upper surface 220 of the body 211 at measurement points MPB1 to MPB12 respectively (Figs. 13(a) and 13(b)). The sensor SN transmits the measurement result of the distance M to the control unit 100.

[0093] After obtaining the distance M at each measurement point MPB from the sensor SN, the control unit 100 calculates the difference between the distances M at the paired measurement points MPB. Based on the absolute value of the difference in distance M, the control unit 100 determines whether the stripping of the upper wafer W2 is performed symmetrically relative to the set line SL.

[0094] As described above, the elastic member 21 is formed of a thin plate-shaped metal member. Therefore, the elastic member 21 may sometimes bend downwards due to stress applied in the Z direction to the upper wafer W2. When the body portion 211 bends downwards, the distance M between the upper surface 220 of the body portion 211 and the lower surface 610 of the chuck support portion 60 varies depending on the amount of bending. In addition, as described above, the stress applied in the Z direction to the upper wafer W2 depends on the ease of peeling from the lower wafer W1. Therefore, by obtaining the difference in distance M between a pair of measuring points MPB set at symmetrical positions across the setting line SL, it is possible to determine whether the peeling is performed symmetrically with respect to the setting line SL.

[0095] In addition, the control unit 100 determines, based on the sign of the difference, whether the peeling is more advanced on the positive or negative side of the X relative to the set line SL.

[0096] For example, as shown in FIG13(a), suppose the distance M of the measurement point MPB12 set on the negative direction side of X across the setting line SL is greater than a predetermined threshold than the distance M of the measurement point MPB6 set on the positive direction side of X. When the distance M at measurement point MPB6 is subtracted from the distance M at measurement point MPB6, the sign of the difference becomes negative. Compared with the positive direction side of X, the control unit 100 determines that the stripping on the negative direction side of X has not progressed.

[0097] The control unit 100 controls the adjustment mechanism 70 based on the above-mentioned determination result.

[0098] Specifically, for example, as shown in FIG13(b), the control unit 100 activates the adjustment mechanism 70a to tilt the second suction cup 20 so that the negative X direction side is facing upwards. As a result, the negative X direction side of the upper wafer W2 is pulled upwards, and the peeling of the negative X direction side is performed. According to the peeling apparatus and peeling method of Embodiment 2, the same effect as the above embodiment can be obtained.

[0099] Although several embodiments of the invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments may be implemented in various other forms and may be omitted, substituted, and modified in various ways without departing from the spirit of the invention. These embodiments and their variations are included within the scope and spirit of the invention and are included within the scope of the invention as described in the claims and their equivalents. [Simplified Explanation of the Diagram]

[0006] [Fig. 1] is a schematic side view showing the configuration of the peeling device of Embodiment 1. [Fig. 2] is a schematic cross-sectional view showing the bonding substrate of Embodiment 1. [Fig. 3] is a schematic plan view showing the second suction cup of Embodiment 1. [Fig. 4] is a diagram explaining the peeling process relative to the set line in Embodiment 1. [Fig. 5] is a diagram explaining the tilt adjustment process of Embodiment 1. [Fig. 6] is a diagram showing a portion of the peeling process using the peeling device of Embodiment 1. [Fig. 7] is a diagram showing a portion of the peeling process using the peeling device of Embodiment 1. [Fig. 8] is a diagram showing a portion of the peeling process using the peeling device of Embodiment 1. [Fig. 9] is a flowchart showing the tilt adjustment process of Embodiment 1. [Fig. 10] is a diagram showing a portion of the peeling process using the peeling device of Embodiment 1. [Fig. 11] is a diagram showing a portion of the peeling process using the peeling device of Embodiment 1. [Fig. 12] is a schematic plan view showing the suction cup support of Embodiment 2. [Figure 13] is a diagram illustrating the tilt adjustment process of Embodiment 2.

Claims

1. A peeling apparatus for peeling an adhesive substrate formed by bonding a first substrate and a second substrate into the aforementioned first substrate and the aforementioned second substrate, comprising: a first suction cup for holding the aforementioned first substrate in the adhesive substrate; a second suction cup for holding the aforementioned second substrate in the adhesive substrate and moving the aforementioned second substrate along a first direction away from the surface of the substrate of the aforementioned first substrate; an adjustment mechanism capable of adjusting the tilt angle of the aforementioned second suction cup, the tilt angle being an tilt angle in a direction orthogonal to the setting line provided on the holding surface of the aforementioned second substrate of the aforementioned second suction cup; and a control unit for controlling the aforementioned adjustment mechanism to make the peeling process symmetrical with respect to the aforementioned setting line; the peeling apparatus further comprising: a suction cup support portion for supporting the aforementioned second suction cup from the aforementioned first direction; and a sensor provided at each of a plurality of first points on the opposing surface of the aforementioned suction cup support portion facing the aforementioned second suction cup, the sensor being used to measure the distance between the opposing surface and the aforementioned second suction cup. The aforementioned control unit determines whether the stripping is performed symmetrically with respect to the aforementioned set line based on the distance measured by the aforementioned sensors installed at each of the aforementioned plurality of first points.

2. The peeling apparatus of claim 1, wherein the second suction cup holds the second substrate via an elastomer, the elastomer being disposed on the holding surface of the second substrate and capable of stretching and contracting in response to stress in the first direction of the second substrate, and a sensor is provided at each of a plurality of first points on the holding surface for measuring the distance between the holding surface and the second substrate, and the control unit determines whether the peeling is performed symmetrically with respect to the set line based on the distance measured by the sensor provided at each of the plurality of first points.

3. The stripping device as claimed in claim 1 or 2, wherein the aforementioned plurality of first points are comprised of at least two second points arranged in a second direction intersecting the aforementioned set line, and the aforementioned control unit determines whether the stripping is performed symmetrically with respect to the aforementioned set line based on the difference in the aforementioned distances among the at least two aforementioned second points.

4. The peeling device of claim 1, further comprising: two lifting mechanisms connected to the aforementioned second suction cup, which enable the aforementioned second suction cup to be lifted and lowered along the aforementioned first direction; the aforementioned setting line is a line connecting the connection positions of the two aforementioned lifting mechanisms of the aforementioned second suction cup.

5. The peeling device of claim 1, wherein the aforementioned adjustment mechanism is connected to each of the two ends of the aforementioned second suction cup in the direction intersecting the aforementioned setting line.

6. The peeling device as claimed in claim 1 or 2, wherein the aforementioned plurality of first points are arranged circumferentially at the ends of the aforementioned retaining surface.

7. The peeling device as claimed in claim 1 or 2, wherein the aforementioned adjustment mechanism is connected to each of the two ends of the aforementioned second suction cup in the direction intersecting the aforementioned setting line, and the aforementioned plurality of first points are disposed on the aforementioned holding surface further inward than the aforementioned two ends.

8. A peeling method, which is a peeling method using the peeling device described in claim 1.

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