Flip-chip light emitting diode and manufacturing method thereof

Abstract

This invention provides a method for manufacturing a flip-chip light-emitting diode, comprising the following steps: providing a first substrate; performing an epitaxial process to form a semiconductor structure on the first substrate, wherein the semiconductor structure includes a current-conducting layer forming a bonding side and defining a first electrode projection region and a second electrode projection region; performing an etching process to form at least one groove on the bonding side; performing a filling process to fill the at least one groove with a transparent material to change the current conduction path on the bonding side; performing a bonding process to bond a second substrate to the bonding side; and removing the first substrate and forming a first electrode and a second electrode on one side of the semiconductor structure adjacent to the first substrate. The position of the first electrode corresponds to the first electrode projection region, and the position of the second electrode corresponds to the second electrode projection region.

Claims

1. A method for manufacturing a flip-chip light-emitting diode, comprising the following steps: providing a first substrate; performing an epitaxial process to form a semiconductor structure on the first substrate, wherein the semiconductor structure sequentially includes a first semiconductor epitaxial layer, a light-emitting layer, a second semiconductor epitaxial layer and a current-conducting layer from the position adjacent to the first substrate, and the current-conducting layer forms a bonding side and defines a first electrode projection region and a second electrode projection region; performing an etching process to form at least one groove on the bonding side, wherein each groove extends from one side near the first electrode projection region to one side near the second electrode projection region; performing a filling process to fill a transparent material into the at least one groove to change the current conduction path of the bonding side, wherein the impedance value of the transparent material is different from the impedance value of the current-conducting layer; Perform a bonding process to bond a second substrate to the bonding side; and remove the first substrate and form a first electrode and a second electrode on one side of the semiconductor structure adjacent to the first substrate, wherein the position of the first electrode corresponds to the first electrode projection area and is electrically connected to the first semiconductor epitaxial layer, and the position of the second electrode corresponds to the second electrode projection area and is electrically connected to the current conducting layer.

2. The method for manufacturing a flip-chip light-emitting diode as described in claim 1, wherein the at least one groove is located at a position other than the shortest connecting path between the projection area of ​​the first electrode and the projection area of ​​the second electrode.

3. The method for manufacturing a flip-chip light-emitting diode as described in claim 2, wherein the impedance value of the transparent material is lower than the impedance value of the current-conducting layer.

4. The method for manufacturing a flip-chip light-emitting diode as described in claim 3, wherein the impedance value of the current-conducting layer is 10 to 103 times the impedance value of the transparent material.

5. The method for manufacturing a flip-chip light-emitting diode as described in claim 2, wherein the transparent material is selected from one of the following groups of materials: silicon oxide, silicon nitride, and magnesium fluoride.

6. The method for manufacturing a flip-chip light-emitting diode as claimed in claim 1, wherein one of the at least one groove is located on the shortest path connecting the first electrode projection region and the second electrode projection region.

7. A method for manufacturing a flip-chip light-emitting diode as described in claim 6, wherein the impedance value of the transparent material is higher than the impedance value of the current-conducting layer.

8. A method for manufacturing a flip-chip light-emitting diode as described in claim 7, wherein the impedance value of the transparent material is 10 to 103 times the impedance value of the current-conducting layer.

9. A method for manufacturing a flip-chip light-emitting diode as described in claim 6, wherein the transparent material is selected from one of the following groups of materials: indium zinc oxide, aluminum zinc oxide, and indium tin oxide.

10. A method for manufacturing a flip-chip light-emitting diode as claimed in claim 1, wherein each of the grooves is a straight groove, a rectangular groove, a circular groove, an elliptical groove, a curved groove, a grid-like groove, a tree-like groove, or a radial groove.

11. A flip-chip light-emitting diode manufactured using a manufacturing method of a flip-chip light-emitting diode as described in any one of claims 1 to 10.

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