Lcm structure with manganese oxide and fabricating method of the same

Abstract

A light-controlled metasurface structure with manganese oxide includes a first dielectric layer and a second dielectric layer stacked from bottom to top. Two copper rails are disposed on the second dielectric layer, a gap is disposed between the two copper rails, a plurality of liquid crystals fill the gap, two copper wires are embedded in the first dielectric layer, each copper wire is located below a copper rail, the two manganese oxide layers respectively contact the bottom and sidewall of one of the copper wires, and the two dielectric layers each contact a manganese oxide layer and both dielectric layers contact the first dielectric layer.

Claims

1. A light control metasurface (LCM) structure with manganese oxide, comprising: a first dielectric layer and a second dielectric layer stacked from bottom to top; two copper rails disposed on the second dielectric layer; a gap disposed between the copper rails; a plurality of liquid crystals filling the gap; two copper wires embedded in the first dielectric layer, the copper wires being located below the copper rails; two manganese oxide (MnOx) layers respectively contacting the bottom and sidewall of one of the copper wires; and two dielectric layers respectively contacting the manganese oxide layers and the dielectric layers contacting the first dielectric layer.

2. The light-controlled metasurface structure with manganese oxide as described in claim 1, wherein the manganese oxide layers respectively contact the upper surface of one of the copper wires.

3. The light-controlled metasurface structure with manganese oxide as described in claim 1, wherein the chemical formula of the manganese oxide in each manganese oxide layer is MnOx, and x is between 1 and 3.

5.

4. The light-controlled metasurface structure with manganese oxide as described in claim 1, wherein the dielectric layer comprises nitrogen-doped silicon carbide (NDC), oxygen-doped silicon carbide (ODC), silicon carbide, silicon nitride, or aluminum nitride.

5. The light-controlled metasurface structure with manganese oxide as described in claim 1, further comprising: after a light source illuminates the copper wires, the light source is reflected by the copper wires and enters the gap.

6. The light-controlled metasurface structure with manganese oxide as described in claim 1, wherein each dielectric layer is U-shaped.

7. The light-controlled metasurface structure with manganese oxide as described in claim 1, wherein each of the manganese oxide layers is U-shaped.

8. The light-controlled metasurface structure with manganese oxide as described in claim 1, wherein each of the manganese oxide layers is a hollow rectangle.

9. A method for fabricating a light control metasurface (LCM) structure with manganese oxide, comprising: providing a first dielectric layer; removing a portion of the first dielectric layer to form two trenches in the first dielectric layer; forming two dielectric layers respectively covering the sidewalls and bottom of one of the trenches; after forming the dielectric layers, forming two copper-manganese alloy seed layers respectively covering the sidewalls and bottom of one of the trenches; after forming the copper-manganese alloy seed layers, performing electroplating to form two copper wires respectively located in each of the trenches; forming a second dielectric layer covering the first dielectric layer; heating the copper-manganese alloy seed layers to segregate the copper-manganese alloy seed layers into two manganese oxide layers; and forming two copper rails disposed on the second dielectric layer.

10. The method for fabricating a light-controlled metasurface structure with manganese oxide as described in claim 9, further comprising: after forming the second dielectric layer, forming a copper plug embedded in the second dielectric layer, wherein the copper plug contacts one of the copper railings and one of the copper wires.

11. A method for fabricating a light-controlled metasurface structure having manganese oxide as described in claim 9, wherein the manganese oxide layers respectively contact the bottom and sidewall of one of the copper wires.

12. A method for fabricating a light-controlled metasurface structure having manganese oxide as described in claim 11, wherein the manganese oxide layers respectively contact the upper surface of one of the copper wires.

13. The method for fabricating a light-controlled metasurface structure with manganese oxide as described in claim 9, wherein the chemical formula of the manganese oxide in each manganese oxide layer is MnOx, and x is between 1 and 3.

5.

14. The method for fabricating a light-controlled metasurface structure with manganese oxide as described in claim 9, wherein the dielectric layer comprises nitrogen-doped silicon carbide (NDC), oxygen-doped silicon carbide (ODC), silicon carbide, silicon nitride, or aluminum nitride.

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