Light-emitting packaged components

Abstract

A light-emitting packaging element includes a carrier substrate and a light-emitting diode chip connected to the carrier substrate by flip-chip bonding. The light-emitting diode chip has a light-emitting unit, an electrode unit, and a reflective unit. In particular, the reflective unit has a second reflective structure sandwiched between the light-emitting unit and the substrate. The second reflective structure is in contact with the bonding layer, and the material of the second reflective structure bonded to the bonding layer is the same as the constituent material of the bonding layer. By making the material of the second reflective structure bonded to the bonding layer the same as the constituent material of the bonding layer, the bonding strength between the light-emitting diode chip and the carrier substrate can be effectively improved.

Claims

1. A light-emitting packaging element, comprising: a carrier substrate having a substrate, a connection layer formed on the surface of the substrate, two through holes penetrating the connection layer and the corresponding substrate, and conductive pillars corresponding to and filling the through holes; and a light-emitting diode chip connected to the carrier substrate by flip-chip method, having a light-emitting unit, an electrode unit, and a reflective unit, the light-emitting unit having an N-type gallium nitride epitaxial layer, a quantum well layer, and a P-type gallium nitride epitaxial layer formed sequentially, the N-type gallium nitride epitaxial layer being non-polar and having an m-plane crystal plane, and a portion of the surface of the N-type gallium nitride epitaxial layer being exposed to the outside, forming a platform region, the electrode unit having... The light-emitting unit has an N-type electrode formed in the platform region and a P-type electrode connected to the surface of the P-type gallium nitride epitaxial layer. The reflective unit has a first reflective structure formed in the N-type gallium nitride epitaxial layer that faces the light-emitting surface of the electrode unit, and a second reflective structure sandwiched between the light-emitting unit and the substrate. The P-type electrode and the N-type electrode are located on the same side and are connected to the corresponding conductive pillars through the second reflective structure. The second reflective structure is made of an insulating material and is in contact with the connection layer. The material in which the second reflective structure is connected to the connection layer is made of the same insulating material as the connection layer.

2. The light-emitting package element as described in claim 1, wherein, The first and second reflection structures are Bragg reflection structures formed by stacking materials with different refractive indices.

3. The light-emitting package element as described in claim 2, wherein, The second reflective structure is formed by alternating stacking of multiple layers of titanium dioxide and multiple layers of silicon dioxide.

4. The light-emitting package element as described in claim 3, wherein, The connecting layer is made of silicon dioxide.

5. The light-emitting package element as described in claim 2, wherein, The first reflective structure is formed by alternating stacks of two gallium nitride layers with different doping concentrations.

6. The light-emitting package element as described in claim 5, wherein, The first reflective structure has a gallium nitride layer with a low refractive index and numerous etched holes.

7. The light-emitting package element as claimed in claim 1 further comprises a plurality of solder balls corresponding to the surfaces of the light-emitting unit that are opposite to the conductive pillars.

8. The light-emitting package element as claimed in claim 1, wherein, The electrode unit also includes a current diffusion layer formed on the surface of the P-type gallium nitride epitaxial layer. The P-type electrode has a P-type contact pad that is in contact with a portion of the surface of the current diffusion layer, and a P-type extension electrode that extends from the P-type contact pad through the second reflective structure and is connected to the corresponding conductive post.

9. The light-emitting package element as claimed in claim 1, wherein, The N-type electrode has an N-type contact pad that is in contact with the surface of the platform region, and an N-type extension electrode that extends from the N-type contact pad through the second reflective structure and is connected to the corresponding conductive post.

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