Semiconductor structure and method of manufacturing the same

Abstract

The semiconductor structure of this invention includes: a high electron mobility transistor (HEMT) having a first terminal, a gate terminal, and a second terminal; a first reference voltage interface coupled to the first terminal; a second reference voltage interface coupled to the second terminal; a third interface coupled to the gate terminal; and a first diode string including at least four diodes series-coupled between the first reference voltage interface and the third interface; wherein the first diode string provides a discharge path for electrostatic discharge (ESD) events between the first reference voltage interface and the third interface.

Claims

1. A semiconductor structure, comprising: A high electron mobility transistor having a first terminal, a gate terminal, and a second terminal; A first reference voltage interface is coupled to the first terminal; A second reference voltage interface is coupled to the second terminal; The third interface is coupled to the gate terminal; And a first diode string, comprising at least four diodes series coupled between the first reference voltage interface and the third interface; wherein the first diode string provides a discharge path for electrostatic discharge events between the first reference voltage interface and the third interface.

2. The semiconductor structure as described in claim 1, wherein: The first reference voltage interface is coupled to a high reference voltage source; the second reference voltage interface is coupled to a low reference voltage source; the first terminal includes a drain terminal; and the second terminal includes a source terminal.

3. The semiconductor structure as claimed in claim 1, wherein: The first reference voltage interface is coupled to a low reference voltage source; the second reference voltage interface is coupled to a high reference voltage source; the first terminal includes a source terminal; and the second terminal includes a drain terminal.

4. The semiconductor structure as described in claim 1, further comprising: The second diode string includes at least four diodes connected in series between the second reference voltage interface and the third interface; The second diode string provides a discharge path for electrostatic discharge (ESD) events between the second reference voltage interface and the third interface.

5. The semiconductor structure as claimed in claim 1, further comprising a resistive element coupled between the third interface and the gate terminal.

6. The semiconductor structure as claimed in claim 1, further comprising a third diode string, the third diode string comprising at least five diodes coupled in series between the first terminal and the second terminal.

7. A semiconductor structure comprising: Gallium nitride high electron mobility transistors have drain, gate, and source terminals; A first reference voltage interface is coupled to the drain terminal; A second reference voltage interface is coupled to the source terminal; A third interface is coupled to the gate terminal; a first diode string includes at least four diodes coupled in series between the first reference voltage interface and the third interface; And a second diode string, comprising at least five diodes series coupled between the second reference voltage interface and the third interface; wherein the first diode string provides a discharge path for electrostatic discharge events between the first reference voltage interface and the third interface; wherein the second diode string provides a discharge path for electrostatic discharge events between the second reference voltage interface and the third interface.

8. The semiconductor structure as claimed in claim 7, further comprising a resistive element coupled between the third interface and the gate terminal.

9. A method for manufacturing a semiconductor structure, comprising: A gallium nitride high electron mobility transistor is formed, the gallium nitride high electron mobility transistor having a drain terminal coupled to a high reference voltage source, a gate terminal coupled to a gate terminal interface, and a source terminal coupled to a low reference voltage source; a diode string is formed, the diode string including at least four diodes coupled in series between the gate terminal interface and the high reference voltage source or between the gate terminal interface and the low reference voltage source; and an electrostatic discharge current is discharged through the diode string, the current being generated by an electrostatic discharge event occurring between the gate terminal interface and the high reference voltage source or between the gate terminal interface and the low reference voltage source.

10. The method of claim 9, wherein forming the diode string comprising at least four diodes comprises: A first diode string is formed, the first diode string comprising at least four diodes coupled in series between the gate terminal interface and the high reference voltage source; And to form a second diode string, the second diode string comprising at least five diodes coupled in series between the gate terminal interface and the low reference voltage source.

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