Chemical vapor deposition apparatus

Abstract

This invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus that divides the gas supply area when supplying gas to a substrate and independently controls the flow rate, velocity, or concentration of the gas supplied to each area, thereby improving the growth rate of thin films on the substrate and improving the thickness uniformity and doping uniformity of the thin films.

Description

Technical Field

[0001] This invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus that divides the gas supply area when supplying gas to a substrate and independently controls the flow rate, velocity, or concentration of the gas supplied to each area, thereby improving the growth rate of thin films on the substrate and improving the thickness uniformity and doping uniformity of the thin films. Prior Technology

[0002] Typically, in a chemical vapor deposition apparatus, a substrate is placed on a base, and process gases are supplied from the side of the substrate, thereby enabling the growth of thin films on the substrate.

[0003] In devices based on existing technologies, when process gases are supplied to a substrate, even if the substrate is rotated, the thin film growth rate at the front end of the substrate (i.e., the upstream region of the substrate where the process gases are supplied) is very fast, while the growth rate at the rear end of the substrate (i.e., the downstream region) is relatively slow.

[0004] In existing devices, even adjusting the gas flow rate or velocity cannot solve the above problems, which leads to a significant reduction in the thickness uniformity and doping uniformity of the thin film. Summary of the Invention

[0005] Problem to be solved:

[0006] The present invention is proposed to solve the above-mentioned problems and aims to provide a chemical vapor deposition apparatus that divides the gas supply area when supplying gas to the substrate and independently controls the flow rate, velocity or concentration of the gas supplied to each area, thereby improving the growth rate of the thin film on the substrate and improving the thickness uniformity of the thin film.

[0007] The technical solution of the present invention is as follows:

[0008] The objective of the present invention can be achieved by a chemical vapor deposition apparatus, characterized in that it includes: a chamber; a base disposed inside the chamber and on which at least one substrate is placed; a top cover disposed inside the chamber and providing a processing space for processing the substrate between the top cover and the base; and a flow guide assembly for supplying process gas to the substrate placed in the processing space and having a plurality of flow guides.

[0009] The multiple guide plates can be stacked vertically, and the process gas can be supplied to the substrate through the multiple supply spaces between the multiple guide plates.

[0010] Furthermore, at least some of the multiple guide vanes can be arranged at an angle toward the substrate.

[0011] Furthermore, among these multiple deflectors, the top plate located at the top can have the largest tilt angle, while the tilt angle of the deflector can gradually decrease as it moves towards the bottom.

[0012] Furthermore, among the plurality of guide plates, the bottom plate arranged at the bottom can be arranged horizontally relative to the substrate.

[0013] On the other hand, the baffle assembly can be connected to a gas box that supplies the process gas. Multiple gas spaces connected to the supply space can be respectively provided on the inner side of the gas box in the vertical direction. At least a portion of the gas spaces can be provided with vertical isolation walls.

[0014] Furthermore, the positions and numbers of the multiple vertical isolation walls respectively set in the multiple gas spaces can be different from each other.

[0015] On the other hand, in the plurality of gas spaces, the main gas box for supplying the precursor to the substrate can be divided by the vertical partition wall into a central gas space and side gas spaces arranged on both sides of the central gas space.

[0016] At this point, the width of the central gas space can be the same as the diameter of the substrate.

[0017] On the other hand, the plurality of guide plates may have four guide plates stacked in a vertical direction, and the process gas may be supplied to the substrate through the three supply spaces between the guide plates.

[0018] At this time, the guide plate assembly can be connected to the gas box that supplies the process gas. Inside the gas box, three gas spaces connected to the three supply spaces can be arranged vertically. Each of the three gas spaces is provided with two vertical isolation walls. The gas spaces can be divided into a total of nine spaces.

[0019] Furthermore, at least some of the multiple guide vanes can be arranged at an angle toward the substrate.

[0020] On the other hand, the above-mentioned objective of the present invention can be achieved by a chemical vapor deposition apparatus, characterized in that it includes: an outer cavity; an inner cavity disposed inside the outer cavity; a base disposed inside the inner cavity and on which at least one substrate is placed; a top cover disposed inside the inner cavity and providing a processing space for processing the substrate between the top cover and the base; and a flow guide assembly for supplying process gas to the substrate placed in the processing space and having a plurality of flow guides.

[0021] The multiple guide plates can be stacked vertically, and the process gas can be supplied to the substrate through the multiple supply spaces between the multiple guide plates.

[0022] In addition, the baffle assembly is connected to the gas box that supplies the process gas. Multiple gas spaces connected to the supply space can be respectively provided inside the gas box, and at least a portion of the gas spaces can be provided with vertical isolation walls.

[0023] Furthermore, at least some of the multiple guide vanes can be arranged at an angle toward the substrate.

[0024] The beneficial effects of this invention are as follows:

[0025] According to the present invention having the above structure, when supplying gas to the substrate, the gas supply area is divided and the flow rate, velocity or concentration of the gas supplied to each area is independently controlled, thereby improving the growth rate of the thin film on the substrate and improving the thickness uniformity and doping uniformity of the thin film. Simple Explanation of the Diagram

[0026] Figure 1 is a side cross-sectional view showing the internal structure of a chemical vapor deposition apparatus according to an embodiment of the present invention.

[0027] Figure 2 is a side cross-sectional view of the air box.

[0028] Figure 3 is a top view of the air box.

[0029] Figure 4 is a front view of the gas box of an embodiment, viewed from the front.

[0030] Figure 5 is a top view of the substrate mounted on the base.

[0031] Figure 6 is a graph showing the effect of the gas flow rate supplied to each supply space.

[0032] Figures 7 to 10 are front views showing air boxes of other embodiments. Implementation

[0033] The structure of a chemical vapor deposition apparatus according to an embodiment of the present invention will now be described in detail with reference to the accompanying drawings.

[0034] Figure 1 is a side cross-sectional view showing the internal structure of a chemical vapor deposition apparatus 1000 according to an embodiment of the present invention.

[0035] Referring to Figure 1, the chemical vapor deposition apparatus 1000 may include: an inner cavity 300 (hereinafter referred to as a "chamber"); a base 320 disposed inside the chamber 300, on which at least one substrate S is placed; a top cover 310 disposed inside the chamber 300, providing a processing space 312 for processing the substrate S between the top cover 310 and the base 320; and a flow guide assembly 220 for supplying process gas to the substrate S placed in the processing space 312, and having a plurality of flow guides 232, 234, 236, and 238.

[0036] First, the chemical vapor deposition apparatus 1000 may have an outer cavity 100. Various components may be disposed within the outer cavity 100.

[0037] The inner side of the outer cavity 100 can provide a receiving space 110, and the aforementioned chamber 300 can be disposed in the receiving space 110.

[0038] One side of the outer cavity 100 can be connected to the gas supply unit 200.

[0039] The gas supply unit 200 can supply the processing space 312 of the aforementioned chamber 300 with various process gases, including precursor gases, dopant gases, and / or carrier gases.

[0040] For example, the chemical vapor deposition apparatus 1000 according to an embodiment of the present invention can be configured as an apparatus for epitaxial growth of silicon carbide (SiC) to manufacture power semiconductors. In this case, silicon group gases such as dichlorosilane (SiH2Cl2), methane (SiH4), trichlorosilane (SiHCl3), or silicon tetrachloride (SiCl4), as well as propane (C3H8), methane (CH4), ethylene (C2H4), acetylene (C2H2), etc., can be used as the precursor gas. Furthermore, nitrogen (N2) or ammonia (NH3) can be used as the dopant gas, and hydrogen (H2) can be used as the carrier gas.

[0041] Meanwhile, the gas supply unit 200 may have supply ports 212, 213, and 214 connected to an external gas supply source (not shown), and a baffle assembly 220 that supplies the gas supplied through the supply ports 212, 213, and 214 to the chamber 300.

[0042] The supply ports 212, 213, and 214 can be connected to the deflector assembly 220 through the air box 210.

[0043] The flow guide assembly 220 may have multiple flow guides 232, 234, 236, and 238. These multiple flow guides 232, 234, 236, and 238 may be stacked and arranged in a direction perpendicular to the substrate S. Therefore, the space between the multiple flow guides 232, 234, 236, and 238 arranged in the vertical direction forms multiple supply spaces 240, 250, and 260, through which process gases and / or carrier gases can be supplied to the substrate S.

[0044] Figure 2 is a side view of the air box 210. The deflector assembly 220 is omitted in Figure 2.

[0045] Referring to Figures 1 and 2, multiple gas spaces 241, 251, and 261 connected to the supply spaces 240, 250, and 260 can be respectively arranged vertically on the inner side of the gas box 210.

[0046] The process gas or carrier gas supplied through the supply ports 212, 213, and 214 can be supplied to multiple gas spaces 241, 251, and 261 inside the gas box 210, respectively, and can be supplied between the multiple guide plates 222A, 222B, 222C, and 222D.

[0047] At this time, the gas supplied through the first supply port 213 can be supplied to the first gas space 241 located at the top. In addition, the gas supplied through the second supply port 212 can be supplied to the second gas space 251 located in the central part in the vertical direction. At the same time, the gas supplied through the third supply port 214 can be supplied to the third gas space 261 located at the bottom.

[0048] In addition, an air plate 201 may be provided on the front of the air box 210 (or the side facing the baffle assembly 220), which seals each gas space 241, 251, 261 and forms a supply hole 270 communicating with each gas space 241, 251, 261.

[0049] The gas plate 201 can form a plurality of supply holes 270, which can communicate with each gas space 241, 251, 261. Thus, the gas in each gas space 241, 251, 261 can be supplied to the supply space 240, 250, 260 through the supply holes 270.

[0050] On the other hand, the chamber 300 can be disposed inside the outer cavity 100, and the inner side of the chamber 300 can provide a processing space 312 for processing the substrate S. As described above, by adopting the so-called dual-cavity structure, the possibility of the substrate S being contaminated by particles can be reduced, and the process for the substrate S can be carried out more smoothly.

[0051] Specifically, the inner side of the chamber 300 may be provided with: a base 320 for placing the substrate S, or a satellite body 324 for mounting the substrate S; and a top cover 310 disposed on the inner side of the chamber 300 above the base 320, providing a processing space for processing the substrate S in the space between the top cover 310 and the base 320.

[0052] Furthermore, a lower heater 340 for heating the substrate S can be provided below the base 320. Further, an upper heater 330 for heating the substrate S can be provided above the upper cover 310.

[0053] For example, the chemical vapor deposition apparatus 1000 according to the present invention can correspond to an apparatus for depositing a silicon carbide (SiC) thin film on the surface of the substrate S. Process gases, etc., are supplied from the side of the processing space 312 through the flow guide assembly 220 to guide the laminar flow of the gases within the processing space 312, thereby growing silicon carbide (SiC) single crystals on the upper surface of the substrate S. However, the apparatus for depositing silicon carbide (SiC) thin films in the present invention is merely an example and is not limited thereto. For example, the technical concept of the present invention can be applied to an apparatus for supplying process gases to the substrate S in a laminar flow manner.

[0054] Meanwhile, an air inlet pipe 350 connected to the baffle assembly 220 can be provided on one side of the chamber 300. Process gases, etc., can then be supplied to the processing space 312 through the air inlet pipe 350. Alternatively, the air inlet pipe 350 can be omitted, and the baffle assembly 220 can be directly connected to the chamber 300.

[0055] On the other hand, for example, when depositing a silicon carbide (SiC) thin film on the upper surface of the substrate S, the process temperature reaches approximately 1600°C or higher. Therefore, the cover 310 and the base 320 dividing the processing space 312 can be made of graphite, SiC-coated graphite, TaC-coated graphite, or silicon carbide materials produced by CVD sintering. By using these materials, thermal stability and thermal conductivity can be improved, thereby effectively heating the substrate and reducing power consumption.

[0056] In addition, a satellite body 324 for mounting the substrate S can be installed on the base 320.

[0057] For example, a cover 326 can be provided on the upper surface of the base 320, and the satellite body 324 can be inserted and arranged in the groove 322 of the cover 326.

[0058] Meanwhile, the satellite body 324 can be rotatably mounted on the base 320. In other words, a nozzle (not shown) for supplying floating gas or the like to the lower surface of the satellite body 324 can be provided on the base 320 to rotate the satellite body 324. In the process for the substrate S, the substrate S can be rotated by rotating the satellite body 324, so that the process gas or the like supplied from the side can react uniformly on the entire surface of the substrate S.

[0059] Meanwhile, an exhaust pipe 360 ​​for discharging the gas from the processing space 312 can be connected to the other side of the chamber 300. The gas from the processing space 312 can be discharged to the outside of the outer cavity 100 through the exhaust pipe 360.

[0060] Furthermore, a lower heater 340 for heating the substrate S and the processing space 312 to the process temperature can be provided in the chamber 300. The lower heater 340 can be located below the base 320.

[0061] In addition, the upper heater 330 can be provided above the upper cover 310. The upper heater 330 can be provided above the upper cover 310 and between the cover of the chamber 300.

[0062] At this time, the aforementioned lower heater 340 can be configured as, for example, an induction heater, while the upper heater 330 can be configured as a resistance heater.

[0063] In the aforementioned configuration, the temperature of the substrate S and the processing space 312 is heated to a temperature close to the process temperature by the lower heater 340, which is configured as an induction heater. Then, the temperature of the substrate S and the processing space 312 can be precisely adjusted by the upper heater 330, which is configured as a resistance heater, to correspond to the process temperature.

[0064] The lower heater 340 can be circular or rectangular, such as a so-called "pancake type". The induction heating coil is semi-permanent after installation, thus offering advantages in terms of maintenance and equipment operating costs.

[0065] On the other hand, as described above, when the lower heater 340 is configured as an induction heater and the upper heater 330 is configured as a resistance heater, noise may be generated due to magnetic field interference caused by the AC power supply to the lower heater 340 and the DC power supply to the upper heater 330. To eliminate this noise, a noise filter (not shown) can be connected to the upper heater 330.

[0066] On the other hand, Figure 3 is a top view of the air box 210, and Figure 4 is a front view of the air box 210 according to one embodiment. In Figure 4, the air plate 201 is not shown, and only the supply hole 270 is shown in dashed lines.

[0067] Referring to Figures 1 to 4, the deflector assembly 220 according to this embodiment may have multiple deflectors 232, 234, 236, and 238. In this case, the multiple deflectors 232, 234, 236, and 238 may be disposed between a pair of sidewalls 280 and 282 (refer to Figure 5).

[0068] There is no particular restriction on the number of the deflectors 232, 234, 236, and 238. For example, as shown in the figure, there can be four, but there can also be fewer or more than four. Next, we will explain the case where there are four deflectors 232, 234, 236, and 238.

[0069] The plurality of flow guide plates 232, 234, 236, and 238 can be stacked in a direction perpendicular to the substrate S. The flow guide plates 232, 234, 236, and 238 may include a top plate 232 at the top and a bottom plate 238 at the bottom. Furthermore, a first intermediate plate 234 and a second intermediate plate 236 may be disposed between the top plate 232 and the bottom plate 238. The first intermediate plate 234 may be located above the second intermediate plate 236.

[0070] At this time, at least a portion of the plurality of guide plates 232, 234, 236, and 238 can be arranged at an angle relative to the substrate S.

[0071] For example, among the multiple guide plates 232, 234, 236, and 238, the top plate 232 has the largest tilt angle, and the tilt angles of the guide plates 234, 236, and 238 can gradually decrease as they approach the bottom.

[0072] Furthermore, the base plate 238 can be arranged horizontally relative to the substrate S without tilting.

[0073] For example, the tilt angle of the base plate 238 can be 0 degrees, and the tilt angle of the second intermediate plate 236 can be 0.5 to 1.5 degrees, preferably 1 to 1.3 degrees. Furthermore, the tilt angle of the first intermediate plate 234 can be 1.8 to 3 degrees, preferably 2.3 to 2.6 degrees. And the tilt angle of the top plate 232 can be 3.3 to 5 degrees, preferably 3.5 to 4 degrees, but is not limited thereto.

[0074] When the guide plates 232, 234, 236, and 238 are arranged at an angle, the process gases supplied from between the guide plates 232, 234, 236, and 238 form a laminar flow and flow towards the substrate S, thereby facilitating the growth of thin films in different regions or locations on the substrate S. This structure prevents premature gas mixing, thus preventing parasitic effects before reaching the substrate S.

[0075] Meanwhile, the space between the guide plates 232, 234, 236, and 238 arranged vertically can form the supply spaces 240, 250, and 260.

[0076] For example, the supply spaces 240, 250, and 260 can be configured as a first supply space 240 between the top plate 232 and the first intermediate plate 234, a second supply space 250 between the first intermediate plate 234 and the second intermediate plate 236, and a third supply space 260 between the second intermediate plate 236 and the bottom plate 238.

[0077] Of course, the number of supply spaces 240, 250, and 260 can vary depending on the number of guide plates 232, 234, 236, and 238. Furthermore, each supply space 240, 250, and 260 can be connected to a supply port 270, which is connected to the gas spaces 241, 251, and 261 of the gas box 210 to supply process gas and / or carrier gas. Multiple supply ports 270 can be configured.

[0078] In addition, the concentration, flow rate, and flow rate of the process gas and / or carrier gas supplied to each gas space 241, 251, 261 through the supply port 270 can be independently adjusted.

[0079] In other words, as described above, the gas spaces 241, 251, and 261 of the gas box 210 can be connected to each supply port 212, 213, and 214, respectively. Therefore, the concentration, flow rate, and flow volume of the gas supplied through the supply ports 212, 213, and 214 can be adjusted independently.

[0080] Furthermore, when the gas box 210 is provided with multiple gas spaces 241, 251, 261 as described above, the type of gas supplied to each gas space 241, 251, 261 can be different.

[0081] For example, a carrier gas can be supplied through the first gas space 241 located at the top of the gas chamber 210 and the third gas space 261 located at the bottom. Alternatively, a dopant gas can be supplied according to the process of the substrate S. The carrier gas can be composed of hydrogen (H2), but is not limited to this. Furthermore, the carrier gases supplied through the first gas space 241 and the third gas space 261 can be different from each other.

[0082] In addition, carrier gas and precursor gas can be supplied through the second gas space 251 or the main gas space (hereinafter referred to as the "second gas space") located in the central part in the vertical direction.

[0083] The carrier gas supplied through the first gas space 241 located at the top of the gas box 210 can generate a so-called "push effect", pushing the precursor gas supplied through the second gas space 251 located below towards the substrate S. As a result, the precursor gas supplied from the second gas space 251 can accumulate on the substrate S.

[0084] Furthermore, the carrier gas supplied through the third gas space 261 located at the bottom of the gas box 210 can push the precursor gas supplied by the second gas space 251 toward the substrate S, thereby enabling the precursor gas to be supplied further and more uniformly.

[0085] Furthermore, as described above, by separating the spaces for supplying the dopant gas and the precursor gas, the gas phase reaction between gases before reaching the substrate S can be minimized, thereby increasing the growth rate of the thin film on the substrate S and reducing surface defects of the substrate.

[0086] Furthermore, as shown in Figures 3 and 4, at least a portion of the plurality of gas spaces 241, 251, and 261 may be provided with vertical isolation walls 290 and 292.

[0087] In this embodiment, the vertical isolation walls 290 and 292 can be disposed in the second gas space 251 located in the central portion of the gas box 210 in the vertical direction. One or more vertical isolation walls 290 and 292 can be disposed, and their number is not particularly limited.

[0088] In this embodiment, the vertical isolation walls 290 and 292 can be configured as two. For example, the vertical isolation walls 290 and 292 can be composed of a second-first vertical isolation wall 290 and a second-second vertical isolation wall 292.

[0089] At this time, the second gas space 251 can be divided into three spaces 252, 254, and 256. For example, the second gas space 251 can be divided into a second central gas space 254 and a pair of second side gas spaces 252 and 256 arranged on both sides of the second central gas space 254.

[0090] In addition, the aforementioned second supply port 212 may be configured with a second-1 supply port 212A connected to the second central gas space 254, and second-2 supply ports 212B and 212C connected to the pair of second side gas spaces 252 and 256 respectively.

[0091] Therefore, as shown in Figure 4, the gas spaces 241, 251, and 261 that supply gas through the gas box 210 can be divided into five spaces. The concentration, flow rate, and flow rate of the gas supplied to these five gas spaces 241, 252, 254, 256, and 261 can be adjusted individually.

[0092] Furthermore, the gases supplied through the second central gas space 254 and the pair of second side gas spaces 252, 256 can be the same or different. The second supply space 250 connected to the second gas space 251 is equivalent to a narrow space with a height of less than 10 mm. Therefore, when gas is supplied through the second supply space 250, laminar flow can be quickly formed and flow in a straight line. Even without an additional guide plate, each gas can reach the substrate S without mixing.

[0093] Meanwhile, when the vertical isolation walls 290 and 292 are provided, the widths W2 and W3 of the pair of second-side gas spaces 252 and 256 can be the same. As a result, the width of the gas supplied to both sides of the substrate S can be the same, thereby improving the uniformity of the thin film grown on the substrate S.

[0094] Furthermore, the width W1 of the second central gas space 254 can be 2 to 4 times the widths W2 and W3 of the second side gas spaces 252 and 256. Also, the width W1 of the second central gas space 254 can be approximately the same as the diameter of the substrate S. Therefore, the precursor gas supplied by the second central gas space 254 can flow towards the substrate S.

[0095] Figure 5 is a top view of the substrate S mounted on the base 320. In Figure 5, only the second supply space 250 in the guide vane assembly 220 is shown.

[0096] Referring to Figures 4 and 5, the regions where the gases supplied from the first gas space 241, the second central gas space 254, the pair of second side gas spaces 252, 256 and the third gas space 261 reach the substrate S can be different from each other.

[0097] For example, carrier gas supplied from the third gas space 261 located at the bottom of the gas box 210 via the third supply space 260 can reach the first region A1. The first region A1 may correspond to the region containing a portion of the front end of the substrate S.

[0098] Furthermore, the precursor gas and / or carrier gas supplied from the second central gas space 254 can reach the second region A2. This second region A2 may correspond to the region passing through the center from the front end of the substrate S. Alternatively, the second region A2 may correspond to more than half of the region upstream of the substrate S (or more than half of the region on the front end side of the substrate S). Here, "upstream" can be determined based on the flow direction (arrow) of the supplied gas.

[0099] The second region A2 can occupy approximately 40% to 70% of the total area of ​​the substrate S. Simultaneously, the substrate S can be rotatably placed on the base 320. Therefore, even if the precursor gas or other gas supplied from the second central gas space 254 reaches only half of the upstream region of the substrate S, the precursor gas can still reach the entire region of the substrate S due to the rotation of the substrate S.

[0100] Simultaneously, the carrier gas and / or precursor gas supplied from the pair of second-side gas spaces 252, 256 can reach the third region A3 and the fourth region A4. The third region A3 and the fourth region A4 may include the side surfaces of the substrate S.

[0101] By supplying gas from the pair of second-side gas spaces 252, 256, the growth of the thin film in the edge region of the substrate S can be effectively regulated. In addition, by supplying gas from the pair of second-side gas spaces 252, 256, the diffusion of the precursor gas supplied from the second central gas space 254 to the side surface of the substrate S can be prevented.

[0102] Furthermore, the carrier gas supplied from the first gas space 241 located at the top of the gas box 210 through the first supply space 240 can reach the fifth region A5. The fifth region A5 may include the rear half region of the substrate S, or the region on the "downstream" side.

[0103] The carrier gas supplied from the first gas space 241 can cause the precursor gas supplied from the second central gas space 254 to accumulate on the substrate S through a pushing effect.

[0104] Simultaneously, the positions of the aforementioned regions A1, A2, A3, A4, and A5 can be adjusted by adjusting the tilt angles of the guide plates 232, 234, 236, and 238. Furthermore, the positions of each region A1, A2, A3, A4, and A5 can also be adjusted when adjusting the flow rate or velocity of the gas supplied from each gas space 241, 252, 254, 256, and 261.

[0105] Figure 6 is a graph showing the effect of the flow rates of the gases supplied from the first gas space 241, the second gas space 251, and the third gas space 261.

[0106] Figure 6(A) shows the effect of the gas flow rate supplied from the first gas space 241, Figure 6(B) shows the effect of the gas flow rate supplied from the second gas space 251, and Figure 6(C) shows the effect of the gas flow rate supplied from the third gas space 261. In each figure, the vertical axis represents the film growth rate, and the horizontal axis represents the distance from one edge of the substrate S to the center.

[0107] Referring to Figure 6(A), it can be seen that when the flow rate of the carrier gas supplied in the first gas space 241 changes from low speed L to high speed H, the growth rate of the thin film in the entire region of the substrate S increases.

[0108] Furthermore, referring to Figure 6(B), it can be seen that when the flow rate of the precursor and / or carrier gas supplied from the second gas space 251 changes from a low speed L to a high speed H, the growth rate in the entire region of the substrate S becomes similar, and the uniformity of the film is improved.

[0109] Furthermore, referring to Figure 6(C), it can be seen that when the flow rate of the carrier gas supplied from the third gas space 251 changes from a low speed L to a high speed H, the peak position of the fastest growth rate of the thin film on the substrate S changes.

[0110] Meanwhile, Figures 7 to 10 are front views showing air boxes 2100, 3100, 4100, and 5100 according to other embodiments.

[0111] Referring to Figure 7, in the gas box 2100 of this embodiment, vertical isolation walls 290, 292, 294, 295, 296, and 297 can be provided in each gas space 241, 251, and 261. Furthermore, the same number of vertical isolation walls 290, 292, 294, 295, 296, and 297 can be provided in each gas space 241, 251, and 261, and each gas space 241, 251, and 261 can be divided into the same number of partitions.

[0112] Furthermore, the plurality of guide plates 232, 234, 236, and 238 can be configured as four stacked in a vertical direction, and gas can be supplied to the substrate S through the three supply spaces 240, 250, and 260 between the guide plates 232, 234, 236, and 238.

[0113] Furthermore, three gas spaces 241, 251, and 261, connected vertically to the three supply spaces 240, 250, and 260, can be respectively provided on the inner side of the gas box 2100. In addition, two vertical isolation walls 290, 292, 294, 295, 296, and 297 can be respectively provided in the three gas spaces 241, 251, and 261.

[0114] For example, a first-first vertical isolation wall 294 and a first-second vertical isolation wall 295 may be provided in the first gas space 241. Furthermore, a second-first vertical isolation wall 290 and a second-second vertical isolation wall 292 may be provided in the second gas space 251. Furthermore, a third-first vertical isolation wall 296 and a third-second vertical isolation wall 297 may be provided in the third gas space 261.

[0115] Furthermore, the installation positions of the vertical isolation walls 290, 292, 294, 295, 296, and 297 can all be identical. In other words, the width of each space divided by the vertical isolation walls 290, 292, 294, 295, 296, and 297 in each gas space 241, 251, and 261 can be the same as that of the other spaces 241, 251, and 261.

[0116] For example, the first gas space 241 can be divided into a first central gas space 244 and a pair of first side gas spaces 242 and 246. Furthermore, the second gas space 251 can be divided into a second central gas space 254 and a pair of second side gas spaces 252 and 256. And the third gas space 261 can be divided into a third central gas space 264 and a pair of third side gas spaces 262 and 266.

[0117] At this time, the widths of the first central gas space 244, the second central gas space 254, and the third central gas space 264 can all be the same. In addition, the widths of the first side gas spaces 242 and 246, the second side gas spaces 252 and 256, and the third side gas spaces 262 and 266 can all be the same.

[0118] This embodiment shows the case where two vertical isolation walls 290, 292, 294, 295, 296, and 297 are respectively set in the three gas spaces 241, 251, and 261, thereby dividing the three gas spaces 241, 251, and 261 into a total of nine spaces.

[0119] In particular, the structure divided into nine spaces can suppress gas phase reactions to achieve rapid growth and improve the surface defects of the deposited film. Furthermore, by independently adjusting the gas supply and concentration of the left gas spaces 242, 252, 262 and the right gas spaces 246, 256, 266, which are divided into three layers, it has the advantage of improving film thickness and doping uniformity.

[0120] Meanwhile, referring to FIG8, in the gas box 3100 according to this embodiment, the positions of the vertical isolation walls 290, 292, 294, 295, 296, and 297' arranged in each gas space 241', 251, and 261' can be different from each other.

[0121] Therefore, the width of each space in each gas space 241', 251, 261' divided by the vertical isolation walls 290, 292, 294', 295', 296', 297' can be different from the spaces divided in the other spaces 241', 251, 261'.

[0122] For example, for the first gas space 241' located at the top of the gas box 3100, the width of the first central gas space 244' located at the center can be greater than the width of the other central gas spaces 254 and 264'. Conversely, the width of the first side gas spaces 242' and 246' can be smaller than the width of the other side gas spaces 252, 256, 262', and 266'.

[0123] Furthermore, for the third gas space 261' located at the bottom of the gas box 3100, the width of the central third gas space 264' can be smaller than the width of the other central gas spaces 244' and 254. Conversely, the width of the third side gas spaces 262' and 266' can be larger than the width of the other side gas spaces 242', 246', 252, and 256.

[0124] Ultimately, the width of each space can be adjusted by adjusting the positions of the vertical isolation walls 290, 292, 294', 295', 296', and 297', thereby adjusting the area through which the gas supplied to the substrate S reaches.

[0125] Meanwhile, referring to FIG9, in the gas box 4100 according to this embodiment, the number of vertical isolation walls 290, 292, 294, 296, 297, and 298 arranged in each gas space 241”, 251, and 261” can be different from each other.

[0126] For example, the first gas space 241” can be provided with a first vertical partition wall 294”, and the second gas space 251 can be provided with two second vertical partitions 290 and 292. In addition, the third gas space 261” can be provided with three third vertical partition walls 296”, 297”, and 298”.

[0127] Therefore, the first gas space 241” can be divided into two spaces 242” and 244”, the second gas space 251 can be divided into three spaces 252”, 254” and 256”, and the third gas space 261” can be divided into four spaces 262”, 264”, 266” and 268”.

[0128] Thus, by changing the number of vertical isolation walls 290, 292, 294, 296, 297, and 298” provided in each gas space 241”, 251, and 261”, each gas space 241”, 251, and 261” can be divided into different numbers of spaces, thereby allowing for more precise adjustment of the flow rate, velocity, or concentration of the gas supplied to the substrate S.

[0129] On the other hand, referring to FIG10, in the gas box 5100 according to this embodiment, the vertical isolation walls 290, 292, 296, and 297 may not be provided in the first gas space 241 located at the top, but may be provided in the second gas space 251 located in the center in the vertical direction and the third gas space 261 located at the bottom.

[0130] For example, the second gas space 251 may be provided with a second-first vertical isolation wall 290 and a second-second vertical isolation wall 292, and the third gas space 261 may be provided with a third-first vertical isolation wall 296 and a third-second vertical isolation wall 297.

[0131] The vertical isolation walls 290, 292, 296, and 297 can all be installed in the same position, but are not limited to this. In other words, the width of each space divided by the vertical isolation walls 290, 292, 296, and 297 in each gas space 251 and 261 can be the same as or different from the other gas spaces 251 and 261.

[0132] For example, the second gas space 251 can be divided into a second central gas space 254 and a pair of second side gas spaces 252 and 256. Furthermore, the third gas space 261 can be divided into a third central gas space 264 and a pair of third side gas spaces 262 and 266.

[0133] At this time, the widths of the second central gas space 254 and the third central gas space 264 can all be the same. In addition, the widths of the second side gas spaces 252 and 256 and the third side gas spaces 262 and 266 can also all be the same.

[0134] In this embodiment, the first gas space 241 located at the top is not divided, so that the carrier gas can be injected into the first supply space 240 at high speed at the start of the process to uniformly disperse the momentum of the overall gas flow and promote laminar flow, thereby maintaining the stability of gas injection.

[0135] Furthermore, since the first gas space 241 is not separated, unnecessary gas mixing can be prevented, thereby suppressing particle generation. This prevents unnecessary coating or deposition from forming on the lower surface of the cover 310, thereby preventing particles from falling from the cover 310 and thus preventing the substrate S from being contaminated.

[0136] Furthermore, since the second gas space 251 and the third gas space 261 are separated by the vertical isolation walls 290, 292, 296, and 297, the concentration of the gas supplied by each partition space can be precisely adjusted, which is beneficial for the large-scale development of the substrate S.

[0137] Furthermore, dividing the second gas space 251 and the third gas space 261 into three parts, namely the central part and the edge part, can prevent the gas from being depleted in the edge region of the substrate S.

[0138] Although the present invention has been described above with reference to preferred embodiments, those skilled in the art can make various modifications and alterations to the present invention without departing from the technical concept and field of the present invention as described in the claims. Therefore, if a modified embodiment substantially includes the technical features of the present invention as described in the claims, it should be considered to be entirely included within the technical scope of the present invention.

[0139] 100: External cavity 110: Capacity 200: Gas Supply Department 220: Deflector Assembly 232: Top Plate 234: First intermediate plate 236: Second intermediate plate 238: Base Plate 240: First Supply Space 241: First Gas Space 250: Second Supply Space 251: Second Gas Space 260: Third Supply Space 261: Third Gas Space 290, 292: Vertical isolation walls 300: Chamber 310: Top Cover 312: Processing Space 320: Base 330: Upper heater 340: Lower heater 350: Intake pipe 360: Exhaust pipe 1000: Chemical Vapor Deposition Unit

Claims

1. A chemical vapor deposition apparatus, comprising: Chamber; A base is disposed inside the chamber, and at least one substrate is mounted thereon; A top cover is disposed inside the chamber, and a processing space for processing the substrate is provided between the top cover and the base; and a flow guide assembly supplies process gas to the substrate placed in the processing space, and has multiple flow guides stacked in a vertical direction, the process gas being supplied to the substrate through multiple supply spaces between the multiple flow guides.

2. The chemical vapor deposition apparatus as described in claim 1, wherein, At least some of the multiple guide vanes are arranged at an angle toward the substrate.

3. The chemical vapor deposition apparatus as described in claim 2, wherein, Among the multiple deflectors, the top plate located at the top has the largest tilt angle, and the tilt angle of the deflector gradually decreases as it moves towards the bottom.

4. The chemical vapor deposition apparatus as described in claim 2, wherein, Among the plurality of guide plates, the bottom plate arranged at the bottom is arranged horizontally relative to the substrate.

5. The chemical vapor deposition apparatus as described in claim 1, wherein, The deflector assembly is connected to a gas box that supplies the process gas. Multiple gas spaces connected to the supply space are respectively arranged in the vertical direction on the inner side of the gas box, and at least a portion of the gas spaces are provided with vertical isolation walls.

6. The chemical vapor deposition apparatus as described in claim 5, wherein, The positions and numbers of the multiple vertical isolation walls, which are respectively set in the multiple gas spaces, are different from each other.

7. The chemical vapor deposition apparatus as described in claim 5, wherein, In the plurality of gas spaces, the main gas box for supplying precursors to the substrate is divided by the vertical partition wall into a central gas space and side gas spaces arranged on both sides of the central gas space.

8. The chemical vapor deposition apparatus as described in claim 7, wherein, The width of the central gas space is the same as the diameter of the substrate.

9. The chemical vapor deposition apparatus as described in claim 1, wherein, The plurality of guide plates have four guide plates stacked in a vertical direction, and the process gas is supplied to the substrate through three supply spaces between the guide plates.

10. The chemical vapor deposition apparatus as described in claim 9, wherein, The baffle assembly is connected to the gas box that supplies the process gas. Inside the gas box, three gas spaces connected to the three supply spaces are respectively arranged in the vertical direction. Each of the three gas spaces is provided with two vertical isolation walls, and the gas space is divided into nine spaces in total.

11. The chemical vapor deposition apparatus as described in claim 9, wherein, At least some of the multiple guide vanes are arranged at an angle toward the substrate.

12. A chemical vapor deposition apparatus, comprising: external cavity; The inner cavity is located inside the outer cavity; A base is disposed on the inner side of the cavity, and at least one substrate is mounted thereon; A top cover is disposed inside the inner cavity, and a processing space for processing the substrate is provided between the top cover and the base; and a flow guide assembly supplies process gas to the substrate placed in the processing space, and has multiple flow guides stacked in a vertical direction, the process gas being supplied to the substrate through multiple supply spaces between the multiple flow guides.

13. The chemical vapor deposition apparatus as described in claim 12, wherein, The deflector assembly is connected to a gas box that supplies the process gas. Inside the gas box, there are multiple gas spaces that are connected to the supply space. At least a portion of each gas space is provided with a vertical isolation wall.

14. The chemical vapor deposition apparatus as described in claim 12, wherein, At least some of the multiple guide vanes are arranged at an angle toward the substrate.

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