Coating and method of producing multilayer coatings

Abstract

This invention discloses components for reducing the concentration of a multilayer coating on a surface metal and related methods for manufacturing the multilayer coating. One coating includes an oxide layer and an alumina layer. The alumina layer is distinct from the oxide layer. The oxide layer is located between a component and the alumina layer. When measured using secondary ion mass spectrometry (SIMS), compared to a control coating without the oxide layer, the oxide layer and the alumina layer reduce the concentration of an impurity in the alumina layer by at least 10%.

Description

Technical Field

[0001] This invention relates to a multilayer coating for reducing surface metal on oxide films. Prior Technology

[0002] During semiconductor manufacturing, substrates made of alloys are used. These substrates contain trace amounts of metals and other contaminants that can cause defects in downstream components. Summary of the Invention

[0003] Some embodiments relate to a coating. In some embodiments, the coating includes an oxide layer. In some embodiments, the coating includes an alumina layer. In some embodiments, the alumina layer is different from the oxide layer. In some embodiments, the oxide layer is located between a component and the alumina layer. In some embodiments, when measured using secondary ion mass spectrometry (SIMS), the oxide layer and the alumina layer reduce the concentration of an impurity in the alumina layer by at least 10% compared to a control coating without the oxide layer.

[0004] Some embodiments relate to a method. In some embodiments, the method includes obtaining a component. In some embodiments, the method includes exposing the component to at least one first precursor to form an oxide layer on one surface of the component. In some embodiments, the method includes exposing the oxide layer to at least one aluminum precursor and a co-reactant to form an alumina layer on the oxide layer. In some embodiments, the alumina layer is different from the oxide layer. In some embodiments, when measured using secondary ion mass spectrometry (SIMS), the oxide layer and the alumina layer reduce the concentration of an impurity in the alumina layer by at least 10% compared to a control without the oxide layer.

[0005] Some embodiments relate to a coating. In some embodiments, the coating includes an inner alumina layer. In some embodiments, the coating includes a composite. In some embodiments, the composite includes a first oxide layer and a second oxide layer. In some embodiments, the second oxide layer is different from the first oxide layer. In some embodiments, the second oxide layer is located on the first oxide layer. In some embodiments, the first oxide layer is located on the inner alumina layer. In some embodiments, the coating includes an outer alumina layer. In some embodiments, the outer alumina layer is located on the composite. In some embodiments, the inner alumina layer is located between a component and the composite. In some embodiments, when measured using secondary ion mass spectrometry (SIMS), the composite reduces the concentration of an impurity in the outer alumina layer by at least 10% compared to a control coating without the composite.

[0006] Some embodiments relate to a method. In some embodiments, the method includes forming an inner alumina layer on a component. In some embodiments, the method includes forming a composite on the inner alumina layer. In some embodiments, the composite includes a first layer comprising silicon oxide. In some embodiments, the composite includes a second layer comprising alumina. In some embodiments, the first layer is located between the inner alumina layer and the second layer. In some embodiments, the method includes forming an outer alumina layer on the composite. In some embodiments, when measured using secondary ion mass spectrometry (SIMS), the composite reduces the concentration of an impurity in the outer alumina layer by at least 10% compared to a control without the composite. Simple Explanation of the Diagram

[0007] Figure 1 is a schematic diagram of a cross-section of one of the coatings according to one of some embodiments.

[0008] Figure 2 is a flowchart of one method for manufacturing a multilayer coating according to some embodiments.

[0009] Figure 3 is a schematic diagram of a container assembly according to one of some embodiments.

[0010] Figure 4 shows the concentration of one of the impurities (Mg) along a depth in a comparative example using secondary ion mass spectrometry (SIMS).

[0011] Figure 5 is a schematic cross-section of a coating on a component according to one of some embodiments.

[0012] Figure 6 illustrates the concentration of impurity (Mg) along a depth using secondary ion mass spectrometry (SIMS) according to one of some embodiments. Implementation

[0013] In addition to the benefits and improvements already disclosed, other objects and advantages of the invention will become apparent from the following description taken in conjunction with the accompanying drawings. Detailed embodiments of the invention are disclosed herein; however, it should be understood that the disclosed embodiments are merely illustrative of what may be manifested in various forms. Furthermore, the examples given with respect to the various embodiments of the invention are intended to be illustrative and not limiting.

[0014] Some embodiments relate to a coating. In some embodiments, the coating comprises an oxide layer. In some embodiments, the oxide layer may comprise silicon dioxide. In some embodiments, the oxide layer comprises silicon dioxide of the formula SixOy, wherein x is 1 to 2 and y is 1.8 to 2.5. In some embodiments, the oxide layer has a thickness of 10 Å to 100 Å or any range or subrange between 10 Å and 100 Å. In some embodiments, the oxide layer has the following thicknesses: 10 Å to 90 Å, 10 Å to 80 Å, 10 Å to 70 Å, 10 Å to 60 Å, 10 Å to 50 Å, 10 Å to 40 Å, 10 Å to 30 Å, 10 Å to 20 Å, 20 Å to 100 Å, 30 Å to 100 Å, 40 Å to 100 Å, 50 Å to 100 Å, 60 Å to 100 Å, 70 Å to 100 Å, 80 Å to 100 Å, or 90 Å to 100 Å.

[0015] In some embodiments, the coating comprises an alumina layer. In some embodiments, the alumina layer is different from an oxide layer. In some embodiments, the alumina layer comprises alumina of the formula Al₂Oy, wherein y is 2.5 to 3.5. In some embodiments, the alumina layer has a thickness of 10 Å to 100 Å or any range or subrange between 10 Å and 100 Å. In some embodiments, the alumina layer has the following thicknesses: 10 Å to 90 Å, 10 Å to 80 Å, 10 Å to 70 Å, 10 Å to 60 Å, 10 Å to 50 Å, 10 Å to 40 Å, 10 Å to 30 Å, 10 Å to 20 Å, 20 Å to 100 Å, 30 Å to 100 Å, 40 Å to 100 Å, 50 Å to 100 Å, 60 Å to 100 Å, 70 Å to 100 Å, 80 Å to 100 Å, or 90 Å to 100 Å.

[0016] In some embodiments, an oxide layer is located between a component and an alumina layer. In some embodiments, the component includes a substrate, a container, a tray, a box, a conduit, an ampoule, a chamber, a tube, a valve, or any combination thereof. In some embodiments, the component includes an aluminum alloy, a nickel alloy, stainless steel, a cobalt alloy, a titanium alloy, or any combination thereof. In some embodiments, the component includes at least one of the following: iron, chromium, nickel, cobalt, molybdenum, manganese, vanadium, niobium, magnesium, titanium, copper, zinc, lead, aluminum, tin, or any combination thereof.

[0017] In some embodiments, when measured using secondary ion mass spectrometry (SIMS), the oxide layer and the alumina layer reduce the concentration of an impurity in the alumina layer by at least 10% compared to a control coating without an oxide layer. In some embodiments, the oxide layer and the alumina layer reduce the concentration of an impurity in the alumina layer by at least 15%, at least 20%, at least 25%, at least 30%, at least 35%, at least 40%, at least 45%, at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least 85%, at least 90%, at least 95%, or at least 100% compared to a control coating without an oxide layer.

[0018] In some embodiments, the impurities include at least one of the following: iron, chromium, nickel, cobalt, molybdenum, manganese, vanadium, niobium, magnesium, titanium, copper, zinc, lead, aluminum, tin, or any combination thereof. In some embodiments, the impurities in the alumina layer originate from the component.

[0019] In some embodiments, the coating includes an alumina layer located between the component and the oxide layer. In some embodiments, the alumina layer located between the component and the oxide layer includes alumina of the formula Al₂Oy, wherein y is from 2.5 to 3.5. In some embodiments, the alumina layer located between the component and the oxide layer has a thickness of 10 Å to 100 Å or any range or subrange between 10 Å and 100 Å. In some embodiments, the alumina layer located between the component and the oxide layer has the following thicknesses: 10 Å to 90 Å, 10 Å to 80 Å, 10 Å to 70 Å, 10 Å to 60 Å, 10 Å to 50 Å, 10 Å to 40 Å, 10 Å to 30 Å, 10 Å to 20 Å, 20 Å to 100 Å, 30 Å to 100 Å, 40 Å to 100 Å, 50 Å to 100 Å, 60 Å to 100 Å, 70 Å to 100 Å, 80 Å to 100 Å, or 90 Å to 100 Å.

[0020] In some embodiments, the coating includes an oxide layer and an alumina layer. In some embodiments, the coating includes an inner alumina layer, an oxide layer, and an outer alumina layer. In some embodiments, the coating includes 2 to 1000 layers, 2 to 900 layers, 2 to 800 layers, 2 to 700 layers, 2 to 600 layers, 2 to 500 layers, 2 to 400 layers, 2 to 300 layers, 2 to 200 layers, 2 to 100 layers, 2 to 90 layers, 2 to 80 layers, 2 to 70 layers, 2 to 60 layers, 2 to 50 layers, 2 to 40 layers, 2 to 30 layers, 2 to 20 layers, 2 to 10 layers, 2 to 8 layers, 2 to 6 layers, 2 to 4 layers, 4 to 1000 layers, and 6 to 1000 layers. The number of layers can be 8 to 1000, 10 to 1000, 20 to 1000, 30 to 1000, 40 to 1000, 50 to 1000, 60 to 1000, 70 to 1000, 80 to 1000, 90 to 1000, 100 to 1000, 200 to 1000, 300 to 1000, 400 to 1000, 500 to 1000, 600 to 1000, 700 to 1000, 800 to 1000, or 900 to 1000. In some embodiments, the coating layers alternate between oxide layers (such as silicon oxide layers) and aluminum oxide layers.

[0021] In some embodiments, when measured using secondary ion mass spectrometry (SIMS), the concentration of an impurity in the alumina layer is any range or subrange between 10 to 1000 times or 10 to 1000 times less than the concentration of an impurity in the alumina layer of a control coating, wherein the control coating does not include an oxide layer. In some embodiments, the concentration of an impurity in the alumina layer is less than the concentration of an impurity in the alumina layer of a control component by 10 to 900 times, 10 to 800 times, 10 to 700 times, 10 to 600 times, 10 to 500 times, 10 to 400 times, 10 to 300 times, 10 to 200 times, 10 to 100 times, 10 to 90 times, 10 to 80 times, 10 to 70 times, 10 to 60 times, 10 to 50 times, 10 to 40 times, 10 to 30 times, 10 to 20 times, 20 to 10 times. 00x, 30x to 1000x, 40x to 1000x, 50x to 1000x, 60x to 1000x, 70x to 1000x, 80x to 1000x, 90x to 1000x, 100x to 1000x, 200x to 1000x, 300x to 1000x, 400x to 1000x, 500x to 1000x, 600x to 1000x, 700x to 1000x, 800x to 1000x, or 900x to 1000x, wherein the control component does not include an oxide layer.

[0022] In some embodiments, instead of SIMS, Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), electron probe microanalysis (EPMA), Rasford backscattering spectroscopy (RBS), elastic recoil detection (ERD), particle induced X-ray emission (PIXE), laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS), glow discharge-optical emission spectroscopy (GD-OES), or laser induced breakdown spectroscopy (LIBS) can be used.

[0023] Figure 1 is a schematic cross-sectional view of one of the coatings according to one of some embodiments. The coating 100 includes an oxide layer 102 and an aluminum oxide layer. The oxide layer 102 is located between a component 106 and the aluminum oxide layer 104.

[0024] Figure 2 is a flowchart of one method 200 for manufacturing a multilayer coating according to some embodiments. Method 200 may include: obtaining a component 202; exposing the component to at least one first precursor to form an oxide layer 204 on one surface of the component 204; and exposing the oxide layer to at least one aluminum precursor and a co-reactant to form an aluminum oxide layer 206 on the oxide layer.

[0025] At step 202, in some embodiments, the method includes obtaining an assembly. In some embodiments, the assembly includes a substrate, a container, a tray, a box, a conduit, an ampoule, a chamber, a tube, a valve, or any combination thereof. In some embodiments, the assembly includes an aluminum alloy, a nickel alloy, stainless steel, a cobalt alloy, a titanium alloy, or any combination thereof. In some embodiments, the assembly includes at least one of the following: iron, chromium, nickel, cobalt, molybdenum, manganese, vanadium, niobium, magnesium, titanium, copper, zinc, lead, aluminum, tin, or any combination thereof.

[0026] At step 204, in some embodiments, the method includes exposing the component to at least one first precursor to form an oxide layer on one surface of the component. In some embodiments, exposure includes bringing the at least first precursor into close proximity to or direct contact with the component. In some embodiments, exposure includes causing vapor of one of the at least first precursors to flow across the component. In some embodiments, exposure includes a deposition process. Examples of deposition processes include (but are not limited to) at least one of the following: a chemical vapor deposition (CVD) process, a digital or pulsed chemical vapor deposition process, a plasma-enhanced cyclic chemical vapor deposition (PECCVD) process, a flowable chemical vapor deposition (FCVD) process, an atomic layer deposition (ALD) process, a thermal atomic layer deposition (TALD) process, a plasma-enhanced atomic layer deposition (PEALD) process, a metal-organic chemical vapor deposition (MOCVD) process, a plasma-enhanced chemical vapor deposition (PECVD) process, or any combination thereof.

[0027] In some embodiments, the first precursor is a silicon precursor and the oxide layer is a silicon oxide layer. In some embodiments, the silicon precursor includes at least one of the following: tris(methoxy)silanol, tris(ethoxy)silanol, tris(tert-butoxy)silanol, tris(tert-pentoxy)silanol, bis(tert-butylamino)silane, bis(diethylamino)silane, bis(trichlorosilyl)ethane, di(isopropylamino)silane, tetraethyl n-siloxane, silicon tetrachloride, tris(dimethylamino)silane, hexachlorodisilane, or any combination thereof.

[0028] In some embodiments, the component is exposed to a first precursor at a temperature ranging from 25°C to 500°C or one of the subranges between 25°C and 500°C for a pulse duration of 0.1 seconds to 500 seconds or one of the subranges between 0.1 seconds and 500 seconds to form an oxide layer. In some embodiments, the component is exposed to the first precursor at temperatures of: 25°C to 500°C, 25°C to 400°C, 25°C to 300°C, 25°C to 200°C, 25°C to 100°C, 25°C to 90°C, 25°C to 80°C, 25°C to 70°C, 25°C to 60°C, 25°C to 50°C, and 25°C to 40°C. C, 25°C to 30°C, 30°C to 500°C, 40°C to 500°C, 50°C to 500°C, 60°C to 500°C, 70°C to 500°C, 80°C to 500°C, 90°C to 500°C, 100°C to 500°C, 200°C to 500°C, 300°C to 500°C, or 400°C to 500°C. In some embodiments, the substrate or inner layer (if any) is exposed to the following pulse durations: 0.1 s to 400 s, 0.1 s to 300 s, 0.1 s to 200 s, 0.1 s to 100 s, 0.1 s to 90 s, 0.1 s to 80 s, 0.1 s to 70 s, 0.1 s to 60 s, 0.1 s to 50 s, 0.1 s to 40 s, 0.1 s to 30 s, 0.1 s to 20 s, 0.1 s to 10 s, 0.1 s to 5 s, 0.1 s to 1 s, 0.1 s to 0.9 s, 0.1 s to 0.8 s, 0.1 s to 0.7 s, 0.1 s to 0.6 s, 0.1 s to 0.5 s, 0.1 s to 0.5 s, 0.1 s to 0.6 s, 0.1 s to 0.5 s, 0.1 s to 0.7 s, 0.1 s to 0.6 ...7 s, 0.1 s to 0.6 s, 0.1 s to 0.5 s, 0.1 s to 0.7 s, 0.1 s to 0.6 s to 0.4 s, 0.1 s to 0.3 s, 0.1 s to 0.2 s, 0.2 s to 500 s, 0.3 s to 500 s, 0.4 s to 500 s, 0.5 s to 500 s, 0.6 s to 500 s, 0.7 s to 500 s, 0.8 s to 500 s, 0.9 s to 500 s, 1 s to 500 s, 5 s to 500 s, 10 s to 500 s, 20 s to 500 s, 30 s to 500 s, 40 s to 500 s, 50 s to 500 s, 60 s to 500 s, 70 s to 500 s, 80 s to 500 s, 90 s to 500 s s, 100 s to 500 s, 200 s to 500 s, 300 s to 500 s, or 400 s to 500 s.

[0029] At step 206, in some embodiments, the method includes exposing an oxide layer to at least an aluminum precursor and a co-reactant to form aluminum oxide on the oxide layer. In some embodiments, exposure includes bringing at least the aluminum precursor and the co-reactant into close or direct contact with the oxide layer. In some embodiments, exposure includes allowing a vapor of at least the aluminum precursor and the co-reactant to flow across the oxide layer. In some embodiments, exposure includes a deposition process. Examples of deposition processes include (but are not limited to) at least one of the following: a chemical vapor deposition (CVD) process, a digital or pulsed chemical vapor deposition process, a plasma-enhanced cyclic chemical vapor deposition (PECCVD) process, a flowable chemical vapor deposition (FCVD) process, an atomic layer deposition (ALD) process, a thermal atomic layer deposition (ALD) process, a plasma-enhanced atomic layer deposition (PEALD) process, a metal-organic chemical vapor deposition (MOCVD) process, a plasma-enhanced chemical vapor deposition (PECVD) process, or any combination thereof. In some embodiments, exposure includes allowing the aluminum precursor and the co-reactant to flow simultaneously. In some embodiments, exposure includes alternating pulses of the aluminum precursor and the co-reactant.

[0030] In some embodiments, the aluminum precursor includes at least one of the following: trimethylaluminum (TMA), triethylaluminum (TEA), triisobutylaluminum (TIBA), diethylaluminum chloride (DEAC), methylaluminoxane (MAO), dimethylaluminum isopropanol (DMAI), aluminum trichloride (AlCl3), or any combination thereof.

[0031] In some embodiments, the co-reactants include water, O2, O3, or any combination thereof.

[0032] In some embodiments, the oxide layer is exposed to at least the aluminum precursor and co-reactant at a temperature ranging from 25°C to 500°C or any subrange thereof for a pulse duration ranging from 0.1 seconds to 5 seconds or any subrange thereof. In some embodiments, the oxide layer is exposed to at least the aluminum precursor and co-reactant at the following temperatures: 25°C to 500°C, 25°C to 400°C, 25°C to 300°C, 25°C to 200°C, 25°C to 100°C, 25°C to 90°C, 25°C to 80°C, 25°C to 70°C, 25°C to 60°C, 25°C to 50°C, 25°C to 25°C. Up to 40°C, 25°C to 30°C, 30°C to 500°C, 40°C to 500°C, 50°C to 500°C, 60°C to 500°C, 70°C to 500°C, 80°C to 500°C, 90°C to 500°C, 100°C to 500°C, 200°C to 500°C, 300°C to 500°C, or 400°C to 500°C. In some embodiments, the oxide layer is exposed to the following pulse durations: 0.1 s to 4 s, 0.1 s to 3 s, 0.1 s to 2 s, 0.1 s to 1 s, 0.1 s to 0.9 s, 0.1 s to 0.8 s, 0.1 s to 0.7 s, 0.1 s to 0.6 s, 0.1 s to 0.5 s, 0.1 s to 0.4 s, 0.1 s to 0.3 s, 0.1 s to 0.2 s, 0.2 s to 5 s, 0.3 s to 5 s, 0.4 s to 5 s, 0.5 s to 5 s, 0.6 s to 5 s, 0.7 s to 5 s, 0.8 s to 5 s, 0.9 s to 5 s, 1 s to 5 s, 2 s to 5 s, 3 s to 5 s. s to 5 s or 4 s to 5 s.

[0033] In some embodiments, when measured using secondary ion mass spectrometry (SIMS), the oxide layer and the alumina layer reduce the concentration of an impurity in the alumina layer by at least 10% compared to a control without an oxide layer. In some embodiments, the oxide layer and the alumina layer reduce the concentration of an impurity in the alumina layer by at least 15%, at least 20%, at least 25%, at least 30%, at least 35%, at least 40%, at least 45%, at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least 85%, at least 90%, at least 95%, or at least 100% compared to a control without an oxide layer.

[0034] In some embodiments, the impurities include at least one of the following: iron, chromium, nickel, cobalt, molybdenum, manganese, vanadium, niobium, magnesium, titanium, copper, zinc, lead, aluminum, tin, or any combination thereof. In some embodiments, the impurities in the alumina layer originate from the component.

[0035] In some embodiments, prior to forming an oxide layer, the component is exposed to at least an aluminum precursor and a co-reactant to form an inner alumina layer. In some embodiments, the inner alumina layer is exposed to at least a first precursor to form an oxide layer thereon. In some embodiments, the co-reactant includes water, O2, O3, or any combination thereof. In some embodiments, the inner alumina layer is formed by simultaneously flowing the aluminum precursor and the co-reactant. In some embodiments, the inner alumina layer is formed by alternating pulses of the aluminum precursor and the co-reactant.

[0036] In some embodiments, the alumina precursor includes at least one of the following: trimethylaluminum (TMA), triethylaluminum (TEA), triisobutylaluminum (TIBA), diethylaluminum chloride (DEAC), methylaluminoxane (MAO), dimethylaluminum isopropanol (DMAI), aluminum trichloride (AlCl3), or any combination thereof.

[0037] In some embodiments, the component is exposed to an aluminum precursor and co-reactant at a temperature ranging from 25°C to 500°C or any subrange thereof for a pulse duration of 0.1 seconds to 5 seconds or any subrange thereof. In some embodiments, the component is exposed to the aluminum precursor and co-reactant at the following temperatures: 25°C to 500°C, 25°C to 400°C, 25°C to 300°C, 25°C to 200°C, 25°C to 100°C, 25°C to 90°C, 25°C to 80°C, 25°C to 70°C, 25°C to 60°C, 25°C to 50°C, 25°C to 40 ... 0°C, 25°C to 30°C, 30°C to 500°C, 40°C to 500°C, 50°C to 500°C, 60°C to 500°C, 70°C to 500°C, 80°C to 500°C, 90°C to 500°C, 100°C to 500°C, 200°C to 500°C, 300°C to 500°C, or 400°C to 500°C. In some embodiments, the component is exposed to the following pulse durations: 0.1 s to 4 s, 0.1 s to 3 s, 0.1 s to 2 s, 0.1 s to 1 s, 0.1 s to 0.9 s, 0.1 s to 0.8 s, 0.1 s to 0.7 s, 0.1 s to 0.6 s, 0.1 s to 0.5 s, 0.1 s to 0.4 s, 0.1 s to 0.3 s, 0.1 s to 0.2 s, 0.2 s to 5 s, 0.3 s to 5 s, 0.4 s to 5 s, 0.5 s to 5 s, 0.6 s to 5 s, 0.7 s to 5 s, 0.8 s to 5 s, 0.9 s to 5 s, 1 s to 5 s, 2 s to 5 s, 3 s to 5 s. s or 4 s to 5 s.

[0038] In some embodiments, the alumina in the inner alumina layer acts as a catalyst for forming the silicon oxide layer. In some embodiments, only a single layer is required to catalyze silicon oxide growth. Table 1 shows how strongly the thickness of the silicon oxide layer depends on the delivery of silicon precursors, wherein the silicon precursor system is tris(tert-pentoxy)silanol (TTOPSI), the aluminum precursor system is trimethylaluminum (TMA), and the reactor temperature for the ALD process is 150°C. Table 1 TMAa pulse TTOPSIb temperature TTOPSI pulse SiO2 thickness 0.5 s 55°C 50 s 15 Å 0.5 s 65°C 50 s 20 Å 0.5 s 90°C 200 s 35 Å 0.5 s 90°C 400 s 43 Å 0.5 s 95°C 200 s 58 Å 0.5 s 100°C 150 s 83 Å

[0039] In some embodiments, the oxide layer and the alumina layer form a coating. In some embodiments, when the coating is formed from more than two layers, the process alternately repeats between the process for the oxide layer and the process for the alumina layer until the desired number of layers is reached, up to 1000 layers.

[0040] In some embodiments, the component may be part of a container assembly. Figure 3 is a schematic cross-sectional view of a container assembly according to some embodiments. Container 300 houses a tray assembly 302 within an internal volume 304 of container 300. Internal volume 304 has an inner wall surface 306. Tray assembly 302 includes trays 308, each configured to accommodate an evaporable precursor. Each tray 308 of tray assembly 302 includes a portion 310 configured to contact (e.g., thermal contact, physical contact, etc.) the inner wall surface 306 of container 300. Surface-to-surface contact between portion 310 and inner wall surface 306 enhances heat transfer from container 300 to each tray 308 and thus from each tray 308 to the evaporable precursor on each tray 308. Various fluid flow paths are defined within internal volume 304 of container 300 to allow fluid to flow upward, downward, or both upward and downward through container 300, as appropriate. Container 300 is shown as having a generally cylindrical inner chamber. However, it should be understood that the internal volume 304 of the ampoule may have other shapes without departing from the scope of the invention. In some embodiments, a composite coating may be applied to any part of the container described herein.

[0041] Some embodiments relate to a coating. In some embodiments, the coating includes an inner alumina layer. In some embodiments, the inner alumina layer includes aluminum oxide of the formula Al2Oy, where y is 2.5 to 3.5. In some embodiments, the inner alumina layer has a thickness of 10 Å to 100 Å or any range or subrange between 10 Å and 100 Å. In some embodiments, the inner alumina layer has the following thicknesses: 10 Å to 90 Å, 10 Å to 80 Å, 10 Å to 70 Å, 10 Å to 60 Å, 10 Å to 50 Å, 10 Å to 40 Å, 10 Å to 30 Å, 10 Å to 20 Å, 20 Å to 100 Å, 30 Å to 100 Å, 40 Å to 100 Å, 50 Å to 100 Å, 60 Å to 100 Å, 70 Å to 100 Å, 80 Å to 100 Å, or 90 Å to 100 Å.

[0042] In some embodiments, the coating comprises a composite. In some embodiments, the composite comprises a first oxide layer and a second oxide layer. In some embodiments, the second oxide layer is different from the first oxide layer. In some embodiments, the second oxide layer is located on the first oxide layer. In some embodiments, the first oxide layer is located on an inner alumina layer.

[0043] In some embodiments, the first oxide layer comprises a silicon oxide layer. In some embodiments, the first oxide layer comprises silicon dioxide of the formula SixOy, wherein x is 1 to 2 and y is 1.8 to 2.5. In some embodiments, the first oxide layer has a thickness of 10 Å to 100 Å or any range or subrange between 10 Å and 100 Å. In some embodiments, the first oxide layer has the following thicknesses: 10 Å to 90 Å, 10 Å to 80 Å, 10 Å to 70 Å, 10 Å to 60 Å, 10 Å to 50 Å, 10 Å to 40 Å, 10 Å to 30 Å, 10 Å to 20 Å, 20 Å to 100 Å, 30 Å to 100 Å, 40 Å to 100 Å, 50 Å to 100 Å, 60 Å to 100 Å, 70 Å to 100 Å, 80 Å to 100 Å, or 90 Å to 100 Å.

[0044] In some embodiments, the second oxide layer comprises an aluminum oxide layer. In some embodiments, the second oxide layer comprises aluminum oxide of the formula Al2Oy, wherein y is 2.5 to 3.5. In some embodiments, the second oxide layer has a thickness of 10 Å to 100 Å or any range or subrange between 10 Å and 100 Å. In some embodiments, the alumina layer has the following thicknesses: 10 Å to 90 Å, 10 Å to 80 Å, 10 Å to 70 Å, 10 Å to 60 Å, 10 Å to 50 Å, 10 Å to 40 Å, 10 Å to 30 Å, 10 Å to 20 Å, 20 Å to 100 Å, 30 Å to 100 Å, 40 Å to 100 Å, 50 Å to 100 Å, 60 Å to 100 Å, 70 Å to 100 Å, 80 Å to 100 Å, or 90 Å to 100 Å.

[0045] In some embodiments, the composite comprises 2 to 1000 layers, 2 to 900 layers, 2 to 800 layers, 2 to 700 layers, 2 to 600 layers, 2 to 500 layers, 2 to 400 layers, 2 to 300 layers, 2 to 200 layers, 2 to 100 layers, 2 to 90 layers, 2 to 80 layers, 2 to 70 layers, 2 to 60 layers, 2 to 50 layers, 2 to 40 layers, 2 to 30 layers, 2 to 20 layers, 2 to 10 layers, 2 to 8 layers, 2 to 6 layers, 2 to 4 layers, 4 to 1000 layers, or 6 to 1000 layers. The composite may have 8 to 1000 layers, 10 to 1000 layers, 20 to 1000 layers, 30 to 1000 layers, 40 to 1000 layers, 50 to 1000 layers, 60 to 1000 layers, 70 to 1000 layers, 80 to 1000 layers, 90 to 1000 layers, 100 to 1000 layers, 200 to 1000 layers, 300 to 1000 layers, 400 to 1000 layers, 500 to 1000 layers, 600 to 1000 layers, 700 to 1000 layers, 800 to 1000 layers, or 900 to 1000 layers. In some embodiments, the layers of the composite alternate between a first oxide layer and a second oxide layer. In some embodiments, the composite layers alternate between silicon oxide layers and aluminum oxide layers.

[0046] In some embodiments, the coating includes an outer alumina layer. In some embodiments, the outer alumina layer is located on the composite. In some embodiments, the outer alumina layer comprises aluminum oxide of the formula Al₂Oy, wherein y is 2.5 to 3.5. In some embodiments, the outer alumina layer has a thickness of 10 Å to 100 Å or any range or subrange between 10 Å and 100 Å. In some embodiments, the outer alumina layer has the following thicknesses: 10 Å to 90 Å, 10 Å to 80 Å, 10 Å to 70 Å, 10 Å to 60 Å, 10 Å to 50 Å, 10 Å to 40 Å, 10 Å to 30 Å, 10 Å to 20 Å, 20 Å to 100 Å, 30 Å to 100 Å, 40 Å to 100 Å, 50 Å to 100 Å, 60 Å to 100 Å, 70 Å to 100 Å, 80 Å to 100 Å, or 90 Å to 100 Å.

[0047] In some embodiments, an inner alumina layer is located between a component and a composite. In some embodiments, when measured using secondary ion mass spectrometry (SIMS), the composite reduces the concentration of an impurity in the outer alumina layer by at least 10% compared to a control coating without the composite. In some embodiments, the composite reduces the concentration of an impurity in the outer alumina layer by at least 15%, at least 20%, at least 25%, at least 30%, at least 35%, at least 40%, at least 45%, at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least 85%, at least 90%, at least 95%, or at least 100% compared to a control coating without the composite.

[0048] In some embodiments, the impurities include at least one of the following: iron, chromium, nickel, cobalt, molybdenum, manganese, vanadium, niobium, magnesium, titanium, copper, zinc, lead, aluminum, tin, or any combination thereof. In some embodiments, the impurities in the alumina layer originate from the component.

[0049] Any or more of the embodiments disclosed herein should be understood to be combined without departing from the scope or spirit of the invention.

[0050] Example 1 An alumina (Al₂O₃) layer is deposited on the surface of a component. The component contains aluminum (Al) and magnesium (Mg). The concentration of Mg is measured using secondary ion mass spectrometry from the surface of the alumina layer to a depth of 800 Å. As shown in Figure 4, the concentration of Mg increases near the surface of the alumina layer, creating impurities at the surface. If such components are used in semiconductor process hardware, these impurities can react with process chemicals to transport undesired contaminants downstream to a silicon wafer.

[0051] Example 2 According to some embodiments, an inner alumina (Al2Oy) layer is deposited on a component, followed by the deposition of a composite structure of SiOy / Al2Oy / SiOy / Al2Oy / SiOy / Al2Oy / SiOy / Al2Oy, and finally an outer alumina (Al2Oy) layer is deposited on the composite to form a coating on the component. Figure 5 shows a depiction of one coating on a component 500. In Figure 5, 502 is the substrate, 503 is the inner alumina layer, 504 is the composite, and 505 is the outer alumina layer. In addition, in composite 504, silicon oxide layers 506 and alumina layers 508 alternate. The component is a stainless steel alloy containing iron (Fe) and magnesium (Mg). The concentration of Mg is measured from the surface of the outer alumina layer to a depth of 800 Å using secondary ion mass spectrometry. As can be seen in Figure 6, the use of the composite significantly reduces the amount of Mg present at the surface of the outer alumina layer.

[0052] state

[0053] The following describes various patterns. It should be understood that any or more of the features described in the following patterns can be combined with any or more other patterns. 1. A coating comprising: oxide layer; and Alumina layer; The alumina layer is different from the oxide layer; The oxide layer is located between a component and the alumina layer; and When measured using secondary ion mass spectrometry (SIMS), the oxide layer and the alumina layer reduce the concentration of an impurity in the alumina layer by at least 10% compared to a control coating without the oxide layer. Version 2. The coating of Version 1, wherein the component includes a substrate, a container, a tray, a box, a conduit, an ampoule, a chamber, a tube, a valve, or any combination thereof. Specimen 3. A coating of any of Specimens 1 to 2, wherein the component comprises aluminum alloy, nickel alloy, stainless steel, cobalt alloy, titanium alloy, or any combination thereof. Sample 4. A coating of any of Samples 1 to 3, wherein the impurity includes at least one of the following: iron, chromium, nickel, cobalt, molybdenum, manganese, vanadium, niobium, magnesium, titanium, copper, zinc, lead, aluminum, tin, or any combination thereof. State 5. A coating of any of States 1 to 4, wherein the oxide layer comprises silicon oxide. 6. A coating of any of 1 to 5, further comprising an aluminum oxide layer located between the component and the oxide layer. State 7. A coating of any of States 1 to 6, wherein the oxide layer has a thickness of 10 Å to 100 Å. State 8. A coating of any of States 1 to 7, wherein the alumina layer has a thickness of 10 Å to 500 Å. State 9. A coating of any of States 1 to 8, wherein, when measured using secondary ion mass spectrometry (SIMS), the oxide layer and the alumina layer reduce the concentration of the impurity in the alumina layer by at least 50% compared to a control coating without the oxide layer. Specimen 10. A coating of any of Specimens 1 to 9, wherein the oxide layer comprises a plurality of oxide layers. 11. A method comprising: Obtain a component; Expose the component to at least one first precursor to form an oxide layer on the surface of one of the components; The oxide layer is exposed to at least one aluminum precursor and a co-reactant to form an aluminum oxide layer on the oxide layer. The alumina layer is different from the oxide layer; When measured using secondary ion mass spectrometry (SIMS), compared to a control without the oxide layer, the oxide layer and the alumina layer reduce the concentration of an impurity in the alumina layer by at least 10%. Version 12. The method of Version 11, wherein the component includes a substrate, a container, a tray, a box, a conduit, an ampoule, a chamber, a tube, a valve, or any combination thereof. Sample 13. The method of any of Samples 11 to 12, wherein the component is exposed to at least the first precursor at a temperature of 25°C to 500°C for a pulse duration of 0.1 s to 500 s. Sample 14. The method of any of Samples 11 to 13, wherein the oxide layer is exposed to at least the aluminum precursor and the co-reactant at a temperature of 25°C to 500°C. Sample 15. The method of any of Samples 11 to 14, wherein the aluminum precursor comprises at least one of the following: trimethylaluminum (TMA), triethylaluminum (TEA), triisobutylaluminum (TIBA), diethylaluminum chloride (DEAC), methylaluminoxane (MAO), dimethylaluminum isopropanol (DMAI), aluminum trichloride, or any combination thereof. Sample 16. The method of any of Samples 11 to 15, wherein the first precursor comprises at least one of: tris(methoxy)silanol, tris(ethoxy)silanol, tris(tert-butoxy)silanol, tris(tert-pentoxy)silanol, bis(tert-butylamino)silane, bis(diethylamino)silane, bis(trichlorosilyl)ethane, di(isopropylamino)silane, or any combination thereof. State 17. The method of any of States 11 to 16, wherein the oxide layer comprises silicon oxide. 18. A coating comprising: One inner aluminum oxide layer; A complex comprising: A first oxide layer; and A second oxide layer, The second oxide layer is different from the first oxide layer; The second oxide layer is located on the first oxide layer; The first oxide layer is located on the inner alumina layer; and One outer aluminum oxide layer, The outer alumina layer is located on the composite; The inner alumina layer is located between a component and the composite; and When measured using secondary ion mass spectrometry (SIMS), the compound reduced the concentration of an impurity in the outer alumina layer by at least 10% compared to a control coating without the compound. State 19. A coating of State 19, wherein the composite comprises 3 to 1000 oxide layers. 20. A method comprising: An inner alumina layer is formed on a component; A composite is formed on the inner alumina layer. The complex includes: A first layer, comprising silicon oxide; and A second layer, which includes aluminum oxide; The first layer is located between the inner alumina layer and the second layer; and An outer aluminum oxide layer is formed on the composite. When measured using secondary ion mass spectrometry (SIMS), the complex reduced the concentration of an impurity in the outer alumina layer by at least 10% compared to a control without the complex.

[0054] 100: Coating 102: Oxide layer 104: Alumina layer 106: Components 200: Method 202: Steps 204: Steps 206: Steps 300: Container 302: Pallet Assembly 304: Internal volume 306: Inner wall surface 308: Pallet 310: Part 500: Components 502:Substrate 503: Inner alumina layer 504: Complex 505: Outer aluminum oxide layer 506: Silicon oxide layer 508: Alumina layer

Claims

1. A coating comprising: An oxide layer; and an aluminum oxide layer; wherein the aluminum oxide layer is different from the oxide layer; wherein the oxide layer is located between a component and the aluminum oxide layer; and wherein, when measured using secondary ion mass spectrometry (SIMS), the oxide layer and the aluminum oxide layer reduce the concentration of an impurity in the aluminum oxide layer by at least 10% compared to a control coating without the oxide layer.

2. The coating of claim 1, wherein the component comprises a substrate, a container, a tray, a box, a conduit, an ampoule, a chamber, a tube, a valve, or any combination thereof.

3. The coating as claimed in claim 1, wherein the component comprises aluminum alloy, nickel alloy, stainless steel, cobalt alloy, titanium alloy, or any combination thereof.

4. The coating of claim 1, wherein the impurity includes at least one of the following: iron, chromium, nickel, cobalt, molybdenum, manganese, vanadium, niobium, magnesium, titanium, copper, zinc, lead, aluminum, tin, or any combination thereof.

5. The coating of claim 1, wherein the alumina layer has a thickness of 10 Å to 500 Å.

6. A method for manufacturing a multilayer coating, comprising: Obtain a component; The component is exposed to at least one first precursor to form an oxide layer on one surface of the component; the oxide layer is exposed to at least one aluminum precursor and a co-reactant to form an alumina layer on the oxide layer, wherein the alumina layer is different from the oxide layer; wherein, when measured using secondary ion mass spectrometry (SIMS), the oxide layer and the alumina layer reduce the concentration of an impurity in the alumina layer by at least 10% compared to a control without the oxide layer.

7. The method of claim 6, wherein the component comprises a substrate, a container, a tray, a box, a conduit, an ampoule, a chamber, a tube, a valve, or any combination thereof.

8. The method of claim 6, wherein the aluminum precursor comprises at least one of the following: trimethylaluminum (TMA), triethylaluminum (TEA), triisobutylaluminum (TIBA), diethylaluminum chloride (DEAC), methylaluminoxane (MAO), dimethylaluminum isopropanol (DMAI), aluminum trichloride, or any combination thereof.

9. A coating comprising: One inner aluminum oxide layer; A composite material comprising: a first oxide layer; and a second oxide layer, wherein the second oxide layer is different from the first oxide layer; wherein the second oxide layer is located on the first oxide layer; wherein the first oxide layer is located on the inner alumina layer; and an outer alumina layer, wherein the outer alumina layer is located on the composite; wherein the inner alumina layer is located between a component and the composite; and wherein, when measured using secondary ion mass spectrometry (SIMS), the composite reduces the concentration of an impurity in the outer alumina layer by at least 10% compared to a control coating without the composite.

10. The coating of claim 9, wherein the composite comprises 3 to 1000 oxide layers.

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