Substrate processing method and substrate processing system

Abstract

The substrate processing method of the present invention includes: an exposure step, which transforms a portion of the resist in the recess into an exposed portion soluble in the developer, and maintains the remaining portion of the resist in the recess as a non-exposed portion insoluble in the developer; a development step, which leaves the non-exposed portion in the recess and removes the exposed portion from the recess; a protective film formation step, which forms a protective film on the entrance side portion of the inner surface of the recess; a resist removal step, which removes the non-exposed portion from the recess; and an etching step, which protects the entrance side portion from being etched by the etchant by the protective film and etches the bottom side portion of the inner surface of the recess by the etchant.

Claims

1. A substrate processing method, comprising: a resist coating step, wherein a resist is used to fill a recessed portion of the substrate surface; an exposure step, wherein an electromagnetic wave is irradiated onto the resist in the recessed portion, causing a portion of the resist in the recessed portion within a predetermined range from the substrate surface to the depth of the recessed portion to become an exposed portion soluble in a developer, while the remaining portion of the resist in the recessed portion remains an unexposed portion insoluble in the developer; a developing step, wherein a developer is supplied to the resist in the recessed portion, leaving the unexposed portion in the recessed portion and removing the exposed portion from the recessed portion; and a protective film forming step, wherein, while the unexposed portion remains in the recessed portion, a protective liquid is supplied to the recessed portion to form a protective film protecting the inner surface of the recess from etching by an etchant, thereby forming the protective film on the entrance side portion of the inner surface of the recessed portion covered by the exposed portion. The resist removal process removes the non-exposed portion from the aforementioned recess by supplying a resist solution to the aforementioned recess; and the etching process supplies an etching solution to the aforementioned recess, thereby protecting the aforementioned entrance side portion of the aforementioned inner surface of the aforementioned recess from being etched by the etching solution by the aforementioned protective film, and etching the bottom side portion of the aforementioned inner surface of the aforementioned recess covered by the aforementioned non-exposed portion by the aforementioned etching solution.

2. The substrate processing method of claim 1, wherein the aforementioned protective film forming process includes the following steps: while the aforementioned non-exposed portion remains in the aforementioned recess, the aforementioned protective liquid is supplied to the aforementioned surface of the substrate, thereby forming the aforementioned protective film on the aforementioned surface of the substrate and the aforementioned inlet side portion of the aforementioned inner surface of the aforementioned recess.

3. The substrate processing method of claim 1 or 2, wherein the aforementioned resist coating process includes the following steps: forming a film of the aforementioned resist, comprising a surface portion and a filling portion, on the aforementioned substrate, the surface portion being disposed on the aforementioned surface of the aforementioned substrate, and the filling portion extending from the aforementioned surface portion into the aforementioned recess; the aforementioned developing process includes the following steps: supplying the aforementioned developing solution to the aforementioned resist film while the aforementioned recess, except for the aforementioned non-exposed portion, is completely transformed into the aforementioned exposed portion, thereby removing the aforementioned resist film, except for the aforementioned non-exposed portion, from the aforementioned substrate.

4. The substrate processing method of claim 1 or 2, wherein the aforementioned resist coating process includes a process of filling the aforementioned recess with the aforementioned resist when the aforementioned inner surface of the aforementioned recess is hydrophilic; the aforementioned protective film forming process includes the following process: supplying a liquid of a water-repellent agent that hydrophobizes the aforementioned inner surface of the aforementioned recess as the aforementioned protective liquid to the aforementioned recess, thereby forming a hydrophobic aforementioned protective film on the aforementioned entrance side portion of the aforementioned inner surface of the aforementioned recess; the aforementioned etching process includes a process of supplying the aforementioned etching solution containing water to the aforementioned recess.

5. The substrate processing method of claim 4, wherein the aforementioned developing process includes the following steps: by supplying the aforementioned developing solution containing water to the aforementioned resist in the aforementioned recess, the aforementioned non-exposed portion remains in the aforementioned recess, and the aforementioned exposed portion is removed from the aforementioned recess.

6. A substrate processing system comprising: a resist coating apparatus for filling a recessed portion of a substrate surface with resist; an exposure apparatus for irradiating the resist within the recessed portion with electromagnetic waves, thereby causing a portion of the resist within the recessed portion, within a predetermined range from the substrate surface to the depth of the recessed portion, to become an exposed portion soluble in a developer, while maintaining the remaining portion of the resist within the recessed portion as a non-exposed portion insoluble in the developer; a developing apparatus for supplying the developer to the resist within the recessed portion, thereby leaving the non-exposed portion within the recessed portion and removing the exposed portion from the recessed portion; and a protective film forming apparatus for forming the protective film at an inlet-side portion of the recessed portion covered by the exposed portion, while the non-exposed portion remains within the recessed portion. A resist removal apparatus removes the non-exposed portion from the aforementioned recess by supplying a resist solvent to the aforementioned recess; an etching apparatus supplies an etching solution to the aforementioned recess, on the one hand protecting the aforementioned entrance side portion of the aforementioned inner surface of the aforementioned recess from being etched by the etching solution by the aforementioned protective film, and on the other hand etching the bottom side portion of the aforementioned inner surface of the aforementioned recess covered by the aforementioned non-exposed portion by the aforementioned etching solution; and a conveying apparatus conveys the aforementioned substrate between the aforementioned resist coating apparatus, exposure apparatus, developing apparatus, protective film forming apparatus, resist removal apparatus, and etching apparatus.

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