Semiconductor devices

Abstract

This invention provides a semiconductor device with reduced leakage current, which is particularly suitable for power devices. The semiconductor device of this invention includes at least an n+ type semiconductor layer, an n- type semiconductor layer disposed on the n+ type semiconductor layer, a high-resistivity layer at least partially embedded in the n- type semiconductor layer, and a Schottky electrode forming a Schottky bond with the aforementioned n- type semiconductor layer. The aforementioned n+ type semiconductor layer and the aforementioned n- type semiconductor layer each contain crystalline oxide semiconductors as their main components. The distance between the bottom surface of the aforementioned high-resistivity layer and the top surface of the aforementioned n+ type semiconductor layer is less than 1.5 μm. The end of the aforementioned Schottky electrode is located on the aforementioned high-resistivity layer.

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