Through-hole structure and semiconductor packaging structure

Abstract

This invention discloses a through-hole structure and a semiconductor packaging structure used in a semiconductor packaging substrate. The substrate surface has at least one recess, and the angle between the sidewall of the recess on the opening side and the surface of the substrate is 80° or more and 90° or less. This provides a through-hole structure and a semiconductor packaging structure having the through-hole structure that can achieve high density, low wiring resistance, and high performance in a semiconductor packaging structure.

Claims

1. A through-hole structure, which is a through-hole structure used in a semiconductor packaging substrate, wherein, The through-hole structure is formed by machining a through hole in a recess with an opening that contacts a plane. The angle between the starting point of the side wall of the recess on the side of the opening and the ending point of the side wall on the opposite side of the starting point and the plane is 80° or more and 90° or less.

2. The through-hole structure as claimed in claim 1, wherein the recess is a laser-machined recess.

3. The through-hole structure as claimed in claim 1, wherein the recess has a width of less than 20 μm.

4. The through-hole structure as claimed in claim 1, wherein the recess has a depth of less than 20 μm.

5. The through-hole structure as claimed in claim 1, wherein the ratio of the height of the recess to the width of the bottom of the recess is 1.0 or more.

6. The through-hole structure as claimed in claim 1, wherein the width of the bottom of the recess is more than 70% of the opening width of the recess.

7. The through-hole structure as claimed in claim 1, wherein the angle is 83° or more or 85° or more.

8. A through-hole structure, which is a through-hole structure used in a semiconductor packaging substrate, wherein, The through-hole structure is formed by machining a recess with an opening that contacts a plane. The angle between the starting point of the opening side of the sidewall of the recess and the ending point of the sidewall opposite to the starting point, and the plane, is 80° to 90°, 83° to 90°, or 85° to 90°. The recess has a width of 20 μm or less, a depth of 20 μm or less, a height to width ratio of the bottom of the recess of 1.0 or more, a bottom width of the recess of 70% or more of the opening width of the recess, and the recess is machined using a laser beam.

9. A semiconductor packaging structure, which is a semiconductor packaging structure with a through-hole structure, wherein, The semiconductor package structure is formed by processing a through hole in a recess having an opening that contacts a plane. The angle between the starting point of the sidewall of the recess on the opening side and the ending point of the sidewall on the opposite side of the starting point and the plane is 80° or more and 90° or less.

10. The semiconductor package structure of claim 9, wherein the recess is a laser-processed recess.

11. The semiconductor package structure as claimed in claim 9, wherein the recess has a width of less than 20 μm.

12. The semiconductor package structure as claimed in claim 9, wherein the recess has a depth of less than 20 μm.

13. The semiconductor package structure of claim 9, wherein the ratio of the height of the recess to the width of the bottom of the recess is 1.0 or more.

14. The semiconductor package structure of claim 9, wherein the width of the bottom of the recess is more than 70% of the opening width of the recess.

15. The semiconductor package structure as claimed in claim 9, wherein the angle is 83° or more or 85° or more.

16. The semiconductor package structure as described in claim 9, wherein, It also features a metal wiring structure, wherein the metal wiring structure is formed by filling a recess with an opening that contacts a plane with metal, and the angle between the starting point of the side wall of the recess filled with metal on the opening side and the ending point of the side wall opposite to the starting point and the plane is 80° or more and 90° or less.

17. A semiconductor package structure, wherein, is a semiconductor package structure with a through-hole structure, The semiconductor package structure is formed by processing a through-hole into a recess having an opening that contacts a plane. The angle between the starting point of the opening side of the sidewall constituting the recess and the ending point of the sidewall opposite to the starting point, and the plane, is 80° to 90°, 83° to 90°, or 85° to 90°. The recess has a width of 20 μm or less, a depth of 20 μm or less, a height to width ratio of the bottom of the recess of 1.0 or more, a bottom width of the recess of 70% or more of the opening width of the recess, and the recess is a recess processed using a laser beam.

18. The semiconductor package structure as described in claim 16, wherein, It also features a metal wiring structure, wherein the metal wiring structure is formed by filling a recess with an opening that contacts a plane with metal, and the angle between the starting point of the side wall of the recess filled with metal on the opening side and the ending point of the side wall opposite to the starting point and the plane is 80° or more and 90° or less.

19. The semiconductor package structure as described in claim 9 or claim 17, wherein the semiconductor package structure has a rectangular planar shape.

20. The semiconductor package structure as described in claim 9, 16, 17 or 18, wherein the semiconductor package structure comprises a system-on-a-chip.

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