Image sensing device

Abstract

This invention provides an image sensing device, comprising an image sensing structure, a retaining layer, a first optical multilayer film structure, and a cover glass. The image sensing structure includes a substrate and a pixel array. The first optical multilayer film structure includes a first protective layer and a first optical film. The first protective layer is disposed on one side of the retaining layer and blocks the pixel array; the first protective layer is adapted to resist chemical etching. The first optical film is stacked on the side of the first protective layer away from the retaining layer. The cover glass is disposed on the first optical multilayer film structure. Light passes through the cover glass and the first optical multilayer film structure and illuminates the pixel array, which converts the light into electrical signals. Therefore, by providing the first protective layer to resist chemical etching, the problem of optical loss caused by chemical etching can be solved.

Claims

1. An image sensing device, comprising: an image sensing structure, comprising: a substrate including a sensing area and a non-sensing area, the non-sensing area surrounding the sensing area; and a pixel array disposed in the sensing area; a barrier layer disposed in the non-sensing area; and a first optical multilayer film structure, comprising: a first protective layer disposed on one side of the barrier layer and shielding the pixel array, the first protective layer being adapted to resist a chemical etching; and a first optical film stacked on the side of the first protective layer away from the barrier layer; and a cover glass disposed in the first optical multilayer film structure; wherein... A ray of light passes through the cover glass and the first optical multilayer film structure and illuminates the pixel array, which converts the ray of light into an electrical signal.

2. The image sensing device as claimed in claim 1 further includes a second optical multilayer film structure disposed on the side of the cover glass away from the first optical film and including a second optical film and a second protective layer, the second optical film being located between the cover glass and the second protective layer.

3. The image sensing device as described in claim 1, wherein, One material of the first protective layer includes silicon nitride, zirconium dioxide, hafnium dioxide, or tantalum pentoxide.

4. The image sensing device as described in claim 3, wherein, The first protective layer is doped with a single-component nitride or a single-component oxide.

5. The image sensing device as described in claim 1, wherein, The first optical multilayer film structure further includes a surface-modified film disposed between the dike layer and the first protective layer, wherein the water droplet angle of the surface-modified film is smaller than that of the first protective layer.

6. The image sensing device as described in claim 1, wherein, The thickness of the first protective layer is greater than or equal to 1 nm and less than or equal to 12 nm.

7. The image sensing device as described in claim 1, wherein, When a wavelength of the light is greater than or equal to 400 nm and less than or equal to 900 nm, a refractive index of the first protective layer is greater than or equal to 1.7 and less than or equal to 3, and an extinction coefficient of the first protective layer is less than 0.

01.

8. The image sensing device as described in claim 1, wherein, When a wavelength of the light is greater than or equal to 400 nm and less than or equal to 850 nm, the average reflectivity of the cover glass and the first optical multilayer film structure is less than 3%.

9. The image sensing device as described in claim 1, wherein, When a wavelength of the light is greater than or equal to 400 nm and less than or equal to 700 nm, the average reflectivity of the cover glass and the first optical multilayer film structure is less than 0.5%.

10. The image sensing device as described in claim 1, wherein, The first optical multilayer film structure was formed by plasma-assisted reactive magnetron sputtering.

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