Photoelectric conversion device

Abstract

This invention relates to a photoelectric conversion device, comprising a wafer body, an encapsulation layer, a surface cover plate, and an efficiency color enhancement layer assembly. The wafer body has a light-receiving side and a backlight side. The efficiency color enhancement layer assembly comprises a first efficiency enhancement layer and a second color saturation enhancement layer, which are stacked together. The stacked first efficiency enhancement layer and the second color saturation enhancement layer are disposed between the light-receiving side of the wafer body and the surface cover plate. The encapsulation layer is fixed on the efficiency color enhancement layer assembly and the backlight side of the wafer body, and the surface cover plate is disposed on the outside of the encapsulation layer. The efficiency color enhancement layer assembly extends the reflected wavelength after light irradiation and enhances the color rendering and saturation of the reflected color, thereby achieving excellent structural functionality and photoelectric efficiency.

Claims

1. A photoelectric conversion device comprising a wafer body, two encapsulation layers, and two surface cover plates, wherein the wafer body is a silicon wafer, the wafer body having a light-receiving side and a backlight side; the encapsulation layers are made of a light-transmitting material; the surface cover plates are glass or a plastic substrate or base material; wherein the encapsulation layers are respectively fixed to the light-receiving side and the backlight side of the wafer body, and the surface cover plates are respectively disposed on the outer side of the encapsulation layers; characterized in that: an efficiency color enhancement layer group is further provided, the efficiency color enhancement layer group having a first efficiency enhancement layer and a second color saturation enhancement layer, the first efficiency enhancement layer and the second color saturation enhancement layer being stacked together, and the stacked first efficiency enhancement layer and the second color saturation enhancement layer being disposed between the light-receiving side of the wafer body and the surface cover plates, and the thickness of the second color saturation enhancement layer being greater than that of the first efficiency enhancement layer.

2. The photoelectric conversion device as described in claim 1, wherein, The first efficiency enhancement layer and the second color saturation enhancement layer are stacked together and disposed between the surface cover and the encapsulation layer on the light-receiving side of the wafer body.

3. The photoelectric conversion device as described in claim 1, wherein, The first efficiency enhancement layer and the second color saturation enhancement layer, which are stacked together, are disposed between the light-receiving side of the opposite wafer and the inner surface of the encapsulation layer.

4. The photoelectric conversion device as described in claim 1, wherein, The first efficiency enhancement layer and the second color saturation enhancement layer, which are stacked together, are disposed between the backlight side of the wafer and the encapsulation layer, with the first efficiency enhancement layer relative to the backlight side of the wafer and the second color saturation enhancement layer relative to the encapsulation layer.

5. The photoelectric conversion device as described in claim 1, wherein, The efficiency color enhancement layer group is configured in two groups, which are respectively located on the light-receiving side and the backlight side of the wafer body, with the first efficiency enhancement layer of the efficiency color enhancement layer group positioned relative to the light-receiving side and the backlight side of the wafer body.

6. The photoelectric conversion device as described in any one of claims 1 to 5, wherein, The first efficiency enhancement layer and the second color saturation enhancement layer of the efficiency color enhancement layer stack are printed at a processing temperature of 30°C to 60°C and laminated to the surface cover, between the surface cover and the encapsulation layer, or between the light-receiving side of the wafer and the encapsulation layer by printing.

7. The photoelectric conversion device as described in claim 6, wherein, The first efficiency enhancement layer and the second color saturation enhancement layer of this efficiency color enhancement layer assembly are set with a thickness ratio of 0.

25. The first efficiency enhancement layer is printed with an ink spraying concentration of 0.1 wt%, and the second color saturation enhancement layer is printed with an ink spraying concentration of 0.2 wt%, so that the thickness of the second color saturation enhancement layer is greater than that of the first efficiency enhancement layer.

8. The photoelectric conversion device as described in claim 7, wherein, The first efficiency enhancement layer of this efficiency color enhancement layer group is a white ink material, while the second color saturation enhancement layer is a colored ink material with a wavelength of 300nm~800nm.

9. A photoelectric conversion device comprising a wafer body, two encapsulation layers, and two surface cover plates, wherein the wafer body is a silicon wafer, and the wafer body has a light-receiving side and a backlight side; the encapsulation layers are made of a light-transmitting material; the surface cover plates are made of glass or a plastic substrate or base material; wherein the encapsulation layers are respectively fixed to the light-receiving side and the backlight side of the wafer body, and the surface cover plates are respectively disposed on the outside of the encapsulation layers; characterized in that: an efficiency color enhancement layer group is further provided, the efficiency color enhancement layer group having a first efficiency enhancement layer and a second color saturation enhancement layer, the first efficiency enhancement layer and the second color saturation enhancement layer being stacked together, and the stacked first efficiency enhancement layer and the second color saturation enhancement layer being disposed on the outside of the surface cover plate disposed on the light-receiving side of the wafer body, and the thickness of the second color saturation enhancement layer being greater than that of the first efficiency enhancement layer.

10. The photoelectric conversion device as described in claim 9, wherein, The first efficiency enhancement layer and the second color saturation enhancement layer of the efficiency color enhancement layer stack are printed at a processing temperature of 30°C to 60°C and laminated to the surface cover, between the surface cover and the encapsulation layer, or between the light-receiving side of the wafer and the encapsulation layer by printing.

11. The photoelectric conversion device as described in claim 9 or 10, wherein, The first efficiency enhancement layer and the second color saturation enhancement layer of this efficiency color enhancement layer assembly are set with a thickness ratio of 0.

25. The first efficiency enhancement layer is printed with an ink spraying concentration of 0.1 wt%, and the second color saturation enhancement layer is printed with an ink spraying concentration of 0.2 wt%, so that the thickness of the second color saturation enhancement layer is greater than that of the first efficiency enhancement layer.

12. The photoelectric conversion device as described in claim 11, wherein, The first efficiency enhancement layer of this efficiency color enhancement layer group is a white ink material, while the second color saturation enhancement layer is a colored ink material with a wavelength of 300nm~800nm.

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