Plasma system

Abstract

This invention provides a plasma system comprising a vacuum chamber and a chamber window mounted on a machine. The vacuum chamber can hold the workpiece to be processed. A low-voltage plasma, a sputtering gun, and a plasma-assisted chemical vapor deposition coil (PECVD coil) are also mounted around the vacuum chamber. This allows for the uniform deposition of dense thin films on various substrates, enhancing their activity. Furthermore, the chamber window is mounted on one side of the vacuum chamber, enabling real-time monitoring of the plasma reaction status within the vacuum chamber.

Claims

1. A plasma system comprising: a vacuum chamber mounted on a machine base, the vacuum chamber capable of holding a workpiece to be treated, a low-pressure plasma formed by argon, oxygen, and nitrogen being injected into the front of the vacuum chamber, a sputtering gun being mounted on the top surface of the vacuum chamber to uniformly deposit a dense, high-performance thin film on various substrates, a coil being mounted on the back of the vacuum chamber to generate a large number of active particles; and a chamber viewing window mounted on the side of the vacuum chamber to monitor the plasma reaction status within the vacuum chamber in real time.

2. The plasma system as described in claim 1, wherein the machine is equipped with a programmable logic controller (PLC), a radio frequency (RF) device, a direct current power supply (DC) and an electrostatic disk mechanism.

3. The plasma system as described in claim 1, wherein the coil is a plasma-assisted chemical vapor deposition (PECVD) coil.

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