Sputtering machine with ion source device

TWM686155UActive Publication Date: 2026-08-01DAH YOUNG VACUUM EQUIPMENT CO LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Utility models
Current Assignee / Owner
DAH YOUNG VACUUM EQUIPMENT CO LTD
Filing Date
2026-05-27
Publication Date
2026-08-01

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Abstract

This invention provides a sputtering machine with an ion source device, comprising: a cavity housing having a sputtering chamber; a deposition target carrier connected to the cavity housing and used to carry the deposition target; a rotary driver rotatably connected to the deposition target carrier; a target carrier connected to the cavity housing and used to carry and power the target; a vacuum unit connected to the cavity housing and used to adjust the vacuum level in the sputtering chamber; a gas supply unit connected to the cavity housing and used to supply gas to the sputtering chamber; a plasma source connected to the cavity housing and used to provide an induced electric field to ionize the gas; and an ion source device connected to the cavity housing and used to provide an ion beam.
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Claims

1. A sputtering machine with an ion source device, comprising: a housing having a sputtering chamber; a deposition target carrier connected to the housing and used to carry a deposition target; a rotary actuator rotatably connected to the deposition target carrier; a target carrier connected to the housing and used to carry and power a target; a vacuum unit connected to the housing and used to adjust the vacuum level in the sputtering chamber; a gas supply unit connected to the housing and used to supply a gas to the sputtering chamber; a plasma source connected to the housing and used to provide an induced electric field to ionize the gas; and an ion source device connected to the housing and used to provide an ion beam.

2. A sputtering machine with an ion source device as described in claim 1, wherein, The rotary actuator has a rotation direction, the ion source device is located in front of the plasma source in the rotation direction, and the plasma source is located behind the ion source device in the rotation direction.