Semiconductor package thermal conductive structure
Patent Information
- Application Number
- TW115203927
- Authority / Receiving Office
- TW · TW
- Patent Type
- Utility models
- Current Assignee / Owner
- Filing Date
- 2026-05-04
- Publication Date
- 2026-08-11
- Estimated Expiration
- 2036-05-03
Smart Images

Figure TWG2TB001906356_001 
Figure TWG2TB001906356_002 
Figure TWG2TB001906356_003
Abstract
Claims
1. A semiconductor package thermal conductive structure, comprising: A package includes a packaging substrate, a semiconductor wafer, an interposer, and a packaging shell. The packaging substrate has a first side and a second side. The semiconductor wafer is disposed on the first side of the packaging substrate. The interposer is stacked between the semiconductor wafer and the packaging substrate. The packaging shell is disposed on the first side of the packaging substrate and covers the packaging substrate. A plurality of mounting solder balls are disposed on the second side of the packaging substrate and are electrically connected to the semiconductor wafer through the packaging substrate. The semiconductor wafer has a plurality of chip solder balls that are electrically connected to the interposer or the packaging substrate respectively. A circuit board has a mounting surface with a plurality of pads corresponding to the mounting solder balls on the mounting surface. The mounting solder balls are respectively soldered to each of the pads. A chip thermal pad is stacked on the semiconductor wafer. The chip thermal pad has a plurality of vias corresponding to the chip solder balls and the chip solder balls are respectively accommodated in the corresponding vias.
2. The semiconductor package thermally conductive structure as claimed in claim 1, wherein the interposer layer is provided with an interposer circuit, and the semiconductor wafer and the package substrate are electrically connected to the interposer circuit respectively.
3. The semiconductor package thermal conductive structure as claimed in claim 2, wherein the interposer layer is provided with a plurality of intermediate solder balls electrically connected to the intermediate circuit, the intermediate solder balls are respectively soldered to the first side of the package substrate, and an intermediate thermal conductive sheet is stacked between the first side of the package substrate and the interposer layer, the intermediate thermal conductive sheet is provided with a plurality of through holes corresponding to the intermediate solder balls, and the intermediate solder balls are respectively accommodated in the corresponding through holes.
4. The semiconductor package thermal conductive structure as claimed in claim 2, wherein the wafer solder balls are electrically connected to the interposer, and the wafer thermal pad is stacked between the interposer and the semiconductor wafer.
5. The semiconductor package thermal conductive structure as claimed in claim 1, wherein the wafer solder balls are electrically connected to the first side of the package substrate, and the wafer thermal conductive sheet is stacked between the first side of the package substrate and the semiconductor wafer.
6. The semiconductor package thermally conductive structure as claimed in claim 1, wherein the package substrate has a substrate circuit and the mounting solder balls are electrically connected to the substrate circuit respectively.
7. The semiconductor package thermally conductive structure as claimed in claim 1, wherein the package substrate is made of silicon carbide, silicon, ceramic, glass, or diamond.
8. The semiconductor package thermally conductive structure as claimed in claim 2, wherein the interlayer is made of silicon carbide, silicon, ceramic, glass, or diamond.
9. The semiconductor package thermal conductive structure as claimed in claim 1 further includes a first heat dissipation component attached to the package housing.
10. The semiconductor package thermal conductive structure as claimed in claim 1, further comprising a second heat dissipation component, wherein the circuit board has a through-hole, and the second heat dissipation component is disposed on the second side of the package substrate through the through-hole.
11. The semiconductor package thermal conductive structure as claimed in claim 10, wherein the circuit board has a port and the port is aligned with at least a portion of the semiconductor wafer.
12. The semiconductor package thermal conductive structure as claimed in claim 3, wherein the intermediate thermal conductive sheet is made of silicon carbide, silicon, ceramic, glass, or diamond.
13. The semiconductor package thermal conductive structure as claimed in claim 1, wherein the wafer thermal conductive sheet is made of silicon carbide, silicon, ceramic, glass, or diamond.
14. The semiconductor package thermal conductive structure as claimed in claim 1, wherein a thin film adhesive layer is attached to the surface of the package substrate to eliminate air gaps or bubbles.
15. The semiconductor package thermally conductive structure as claimed in claim 1, wherein a thin film adhesive layer is attached to the surface of the interposer to eliminate air gaps or bubbles.
16. The semiconductor package thermal conductive structure as claimed in claim 1, wherein a thin film adhesive layer is attached to the surface of the wafer thermal conductive sheet to eliminate air gaps or bubbles.
17. The semiconductor package thermal conductive structure as claimed in claim 3, wherein a thin film adhesive layer is attached to the surface of the intermediate thermal conductive sheet to eliminate air gaps or bubbles.