Silicon carbide crystal growth device with bottom heating design

Abstract

A silicon carbide crystal growth apparatus with a bottom heating design includes a crucible and a heating system. One end of the crucible is a bottom. The heating system includes an induction coil heating element and a bottom heating module. A raw material is disposed inside the crucible near the bottom. Furthermore, the induction coil heating element is disposed around the periphery of the crucible, and the bottom heating module is disposed outside the crucible and near the bottom. The bottom heating module uniformly heats the raw material to compensate for the lower temperature near the axis of the raw material caused by the induction coil heating element, thereby improving the uniformity of the sublimation rate of the raw material.

Claims

1. A silicon carbide crystal growth apparatus with a bottom heating design, comprising: a crucible having an outer wall forming a hollow cavity, the interior defining a crystal growth space; the crucible including: a bottom located at a closed end of the crucible; a crucible cover disposed at the other end of the crucible opposite to the bottom to close the crystal growth space, the side of the crucible cover facing the crystal growth space including a crystal growth portion; and a bottom heating module including a heating element and an observation hole, the heating element being disposed outside the crucible and close to the bottom; the observation hole penetrating the bottom heating module; wherein... Through the bottom heating module, when a raw material is heated, it is heated evenly, thereby producing a sublimation rate that is close to uniform.

2. The silicon carbide crystal growth apparatus with bottom heating design as described in claim 1, wherein the crucible includes an induction coil heating element disposed around the outer side of the outer wall of the crucible for heating the crucible.

3. The silicon carbide crystal growth device with bottom heating design as described in claim 2, wherein the induction coil heating element is a radio frequency induction coil heating element, which generates an alternating magnetic field by passing in a high frequency alternating current, causing eddy currents to be induced in the outer wall and thus heating up, thereby making the outer wall the main heat source.

4. The silicon carbide crystal growth apparatus with bottom heating design as described in claim 3, wherein after the induction coil heating element heats the crucible, the temperature at one of the axial centers of the crucible is lower, and the temperature distribution inside the crucible is balanced by the bottom heating module.

5. The silicon carbide crystal growth apparatus with bottom heating design as described in claim 4, wherein the raw material comprises any one or any combination of silicon carbide powder, carbon powder, and silicon powder.

6. The silicon carbide crystal growth apparatus with bottom heating design as described in claim 5, wherein the crucible includes a graphite element disposed on the inner side of the crucible lid facing the crystal growth space.

7. The silicon carbide crystal growth apparatus with bottom heating design as described in claim 6, wherein the side of the graphite element facing the crystal growth space is an inner end face, and a portion of the inner end face is the crystal growth portion.

8. The silicon carbide crystal growth apparatus with bottom heating design as described in claim 7, wherein a seed crystal is disposed in the crystal growth section facing the crystal growth space, and the raw material will crystallize on the seed crystal after sublimation.

9. The silicon carbide crystal growth apparatus with bottom heating design as described in claim 8, wherein the seed crystal undergoes a near-uniform sublimation rate through the raw material, and forms a planar structure after crystallization.

10. The silicon carbide crystal growth apparatus with bottom heating design as described in claim 1, wherein the bottom heating module includes a resistance heating element, an induction coil heating element, or an infrared heating element.

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