Microelectromechanical switch device

Abstract

A microelectromechanical switching device includes a first substrate, a second substrate, and a bonding structure. The first substrate includes a first base, a first conductive via, and a signal layer. The first conductive via penetrates the first base. The signal layer connects to the first conductive via and is disposed on the first base. The second substrate includes a second base, a second conductive via, an insulating layer, and a switching structure layer. The second conductive via penetrates the second base. The insulating layer is disposed between the second base and the switching structure layer and exposes the second conductive via. The switching structure layer includes contact bumps. The bonding structure joins the first substrate and the second substrate such that the contact bumps of the switching structure layer contact the signal layer to form a conductive state. When the second conductive via is subjected to a bias voltage and generates electrostatic force, causing the contact bumps to separate from the signal layer, the conductive state switches to an off state.

Claims

1. A microelectromechanical switching device, comprising: A first substrate includes a first base, a first conductive via, and a signal layer. The first conductive via penetrates the first base, and the signal layer is connected to the first conductive via and disposed on the first base. A second substrate includes a second base, a second conductive via, an insulating layer, and a switch structure layer. The second conductive via penetrates the second base, the insulating layer is disposed between the second base and the switch structure layer and exposes the second conductive via, and the switch structure layer includes contact bumps. A bonding structure is also included to bond the first substrate and the second substrate, such that the contact bumps of the switch structure layer contact the signal layer to form a conductive state. When the second conductive via is subjected to a bias voltage and generates electrostatic force, causing the contact bumps of the switch structure layer to separate from the signal layer, the conductive state switches to a de-conducting state.

2. The microelectromechanical switching device as claimed in claim 1, wherein when the contact bump contacts the signal layer, the switching structure layer has a first deformation, and when the contact bump separates from the signal layer, the switching structure layer has a second deformation, and the second deformation is greater than the first deformation.

3. The microelectromechanical switching device as claimed in claim 1, wherein the insulating layer has a first thickness, the bonding structure has a second thickness, and the contact bump has a third thickness, wherein the second thickness is less than the third thickness, and the difference between the third thickness and the second thickness is less than the first thickness.

4. The microelectromechanical switching device as claimed in claim 1, wherein the contact bump includes a bump portion and a metal layer covering the bump portion.

5. The microelectromechanical switching device as claimed in claim 4, wherein the contact bump further includes a contact layer, the hardness of the contact layer being greater than the hardness of the bump portion and the hardness of the metal layer.

6. The microelectromechanical switching device as claimed in claim 1, wherein both ends of the switching structure layer are fixed to the second substrate through the insulating layer.

7. The microelectromechanical switching device as claimed in claim 6, wherein the orthographic projection of the contact bump on the second substrate at least partially overlaps the second conductive via.

8. The microelectromechanical switching device as claimed in claim 1, wherein one end of the switching structure layer is fixed to the second substrate through the insulating layer, and the other end of the switching structure layer is a free end.

9. The microelectromechanical switching device as claimed in claim 1, wherein the first conductive via includes a first via and a first conductive material layer filled in the first via, and the second conductive via includes a second via and a second conductive material layer filled in the second via, and the resistance value of the first conductive material layer is lower than the resistance value of the second conductive material layer.

10. The microelectromechanical switching device of claim 9, wherein the first through-hole comprises a glass through-hole or a silicon through-hole, and the second through-hole comprises a silicon through-hole.

11. The microelectromechanical switching device according to any one of claims 1 to 10, wherein the orthographic projection of the first conductive via on the second substrate does not overlap the second conductive via.

12. The microelectromechanical switching device as claimed in claim 1, wherein the switching structure layer further includes a support portion for carrying the contact bump and a peripheral portion away from the support portion, the upper surface of the support portion and the upper surface of the peripheral portion having a first vertical height, and the bottom surface of the support portion having a second vertical height between the upper surface of the second substrate, and the first vertical height being greater than the second vertical height.

13. The microelectromechanical switching device of claim 1, wherein the switching structure layer further includes a support portion for carrying the contact bump and a peripheral portion away from the support portion, the upper surface of the support portion and the upper surface of the peripheral portion having a first vertical height, and the bottom surface of the support portion having a second vertical height between the upper surface of the second substrate, and the first vertical height being less than the second vertical height.

14. The microelectromechanical switching device of claim 1, wherein the switching structure layer further includes a support portion for carrying the contact bump and a peripheral portion away from the support portion, the upper surface of the support portion and the upper surface of the peripheral portion having a first vertical height, and the bottom surface of the support portion having a second vertical height between the upper surface of the second substrate, and the first vertical height being equal to the second vertical height.

15. The microelectromechanical switching device as claimed in claim 1, wherein the second conductive via is an actuation electrode.

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