Semiconductor processing equipment and its gas spray head

Abstract

A semiconductor processing apparatus and its gas spray head are disclosed. The gas spray head of the semiconductor processing apparatus includes a mounting cover plate and at least one gas distribution plate disposed vertically on the mounting cover plate. A gas diffusion space is formed between the mounting cover plate and the gas distribution plate. The gas diffusion space communicates with an inlet channel on the mounting cover plate and a through hole on the gas distribution plate. The gas distribution plate includes a central region and a peripheral region surrounding the central region. At least one of the gas distribution plates has a non-uniform thickness, with the thickness of the peripheral region being less than the thickness of the central region. This invention balances the difference in process gas flow rates entering the reaction chamber of the semiconductor processing apparatus from the central region and the peripheral region of the gas spray head, resulting in a relatively uniform distribution of process gas concentration entering the reaction chamber. This leads to uniform processing results on the substrate and improves product yield.

Claims

1. A gas spray head, characterized in that it comprises: a mounting cover plate and at least one gas distribution plate disposed vertically on the mounting cover plate, wherein a gas diffusion space is formed between the mounting cover plate and the gas distribution plate; the mounting cover plate has an air inlet channel communicating with the gas diffusion space; the gas distribution plate has a plurality of through holes communicating with the gas diffusion space; the gas distribution plate comprises a central region and a peripheral region surrounding the central region, wherein at least one of the gas distribution plates has a non-uniform thickness, and the thickness of the peripheral region of the non-uniformly thick gas distribution plate is less than the thickness of the central region.

2. The gas spray head as described in claim 1, wherein, The gas distribution plate includes a first gas distribution plate and a second gas distribution plate, wherein: a first gas diffusion space is formed between the first gas distribution plate and the mounting cover plate; the first gas distribution plate has multiple through holes; the thickness of the first gas distribution plate is uneven, with the thickness of the peripheral region of the first gas distribution plate being less than the thickness of the central region; the second gas distribution plate is located below the first gas distribution plate; a second gas diffusion space is formed between the second gas distribution plate and the first gas distribution plate; the second gas distribution plate has multiple through holes.

3. The gas spray head as described in claim 2, wherein, The thickness of the second gas distribution plate is uneven, with the thickness of the peripheral area being less than that of the central area.

4. The gas spray head as described in any one of claims 1-3, wherein, The air intake channel is located in the central area of ​​the mounting cover plate, and the thickness of the gas distribution plate with uneven thickness gradually decreases along a first direction. The first direction is defined as: starting from the edge of the central area of ​​the gas distribution plate, moving towards the surrounding area, until the edge of the gas distribution plate.

5. The gas spray head as claimed in claim 4, wherein, The central area of ​​the gas distribution plate with uneven thickness accounts for 0% to 35% of the total area of ​​the gas distribution plate, and the peripheral area accounts for 65% to 100% of the total area of ​​the gas distribution plate. The height of the through holes on the peripheral area of ​​the gas distribution plate gradually decreases along the first direction, and the decrease in height between adjacent through holes is 5% to 50% in the first direction.

6. The gas spray head as claimed in claim 5, wherein, The lower surface of the peripheral area of ​​the gas distribution plate with uneven thickness is an inclined surface, and the angle between the inclined surface and the horizontal plane is no greater than 15°.

7. The gas spray head as claimed in claim 5, wherein, The lower surface of the peripheral area of ​​the gas distribution plate with uneven thickness is a stepped surface, and in the first direction, the height between adjacent steps decreases by 5% to 50%.

8. The gas spray head as claimed in claim 4, wherein, The airflow rate of the through holes in the central region of the gas distribution plate is less than that of the through holes in the peripheral region of the gas distribution plate.

9. The gas spray head as claimed in claim 4, wherein, The distribution density of through holes in the central region of the gas distribution plate is less than the distribution density of through holes in the peripheral region of the gas distribution plate.

10. The gas spray head as claimed in claim 4, wherein, The through holes on the peripheral area of ​​the gas distribution plate are inclined, and the angle between the axial direction of the through hole and the vertical direction in the clockwise direction is no greater than 15°.

11. A semiconductor processing apparatus, characterized in that it comprises: a reaction chamber; a gas spray head as described in any one of claims 1-10, disposed at the top of the reaction chamber; and a base disposed within the reaction chamber, opposite to the gas spray head, the base being used to support a substrate.

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