Photoelectric conversion device

TWM687365UActive Publication Date: 2026-09-11TAIWAN NANOTECH CORP
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW115203524
Authority / Receiving Office
TW · TW
Patent Type
Utility models
Current Assignee / Owner
Filing Date
2026-04-22
Publication Date
2026-09-11
Estimated Expiration
2036-04-21

Smart Images

  • Figure TWG2TB001911116_001
    Figure TWG2TB001911116_001
  • Figure TWG2TB001911116_002
    Figure TWG2TB001911116_002
  • Figure TWG2TB001911116_003
    Figure TWG2TB001911116_003
Patent Text Reader

Abstract

A photoelectric conversion device includes: a silicon wafer layer; a color photoelectric conversion efficiency layer disposed on one surface of the silicon wafer layer; a first encapsulation layer, which is light-transmitting, disposed on one surface of the silicon wafer layer; and a first cover lens layer, which is light-transmitting, disposed on the outer surface of the first encapsulation layer; thereby achieving the effects of improving photoelectric conversion efficiency and expanding application areas.
Need to check novelty before this filing date? Find Prior Art

Claims

1. A photoelectric conversion device comprising: a silicon wafer layer; a colorization photoelectric conversion efficiency layer disposed on one surface of the silicon wafer layer; a first encapsulation layer, which is light-transmitting, disposed on one surface of the silicon wafer layer; and a first cover lens layer, which is light-transmitting, disposed on the outer surface of the first encapsulation layer.

2. The photoelectric conversion device as described in claim 1, wherein, The two opposite surfaces of the silicon wafer layer can define a light-receiving surface and a backlight surface located opposite each other; the color photoelectric conversion efficiency layer is disposed on the light-receiving surface of the silicon wafer layer, and the first encapsulation layer is disposed outside the light-receiving surface of the silicon wafer layer, covering it together with the color photoelectric conversion efficiency layer.

3. The photoelectric conversion device as described in claim 2 further includes a second encapsulation layer and a second cover lens layer; the second encapsulation layer is light-transmitting and is disposed outside the backlight surface of the silicon wafer layer, and the second cover lens layer is light-transmitting and is disposed on the outer surface of the second encapsulation layer.

4. The photoelectric conversion device as described in claim 1, wherein, The two opposite surfaces of the silicon wafer layer can define a light-receiving surface and a backlight surface located opposite each other; the color photoelectric conversion efficiency layer is disposed on the backlight surface of the silicon wafer layer, and the first encapsulation layer is disposed outside the light-receiving surface of the silicon wafer layer.

5. The photoelectric conversion device as described in claim 4 further includes a second encapsulation layer and a second cover lens layer; the second encapsulation layer is light-transmitting and is disposed outside the backlight surface of the silicon wafer layer, covering the color photoelectric conversion efficiency layer together; the second cover lens layer is light-transmitting and is disposed on the outer surface of the second encapsulation layer.

6. The photoelectric conversion device as claimed in claim 1 further includes a frame attached to the periphery of the silicon wafer layer, the colorization photoelectric conversion efficiency layer, the first encapsulation layer and the first cover lens layer.

7. A photoelectric conversion device, comprising: a silicon wafer layer, wherein two opposite surfaces of the silicon wafer layer define a light-receiving surface and a backlight surface located opposite to each other; two encapsulation layers, which are light-transmitting, and are respectively disposed outside the light-receiving surface and the backlight surface of the silicon wafer layer; two cover lens layers, which are light-transmitting, and are respectively disposed on the outer surface of each encapsulation layer; and a color photoelectric conversion efficiency layer disposed on the surface of one of the cover lens layers.

8. The photoelectric conversion device as described in claim 7, wherein, The color photoelectric conversion efficiency layer is disposed on the outer surface of the cover lens layer, which is located outside the light-receiving surface of the silicon wafer layer.

9. The photoelectric conversion device as described in claim 7, wherein, The color photoelectric conversion efficiency layer is disposed on the outer surface of the cover lens layer, which is located outside the backlight surface of the silicon wafer layer.

10. The photoelectric conversion device as described in claim 7, wherein, The color photoelectric conversion efficiency layer is disposed on the inner surface of the cover lens layer located outside the backlight surface of the silicon wafer layer.