Infrared camera device
Patent Information
- Application Number
- TW115204225
- Authority / Receiving Office
- TW · TW
- Patent Type
- Utility models
- Current Assignee / Owner
- Filing Date
- 2026-05-12
- Publication Date
- 2026-09-11
- Estimated Expiration
- 2036-05-11
Smart Images

Figure TWG2TB001911161_001 
Figure TWG2TB001911161_002 
Figure TWG2TB001911161_003
Abstract
Claims
1. An infrared light imaging device for capturing an infrared light image of an object, the infrared light imaging device comprising: An infrared light source used to emit infrared light with a peak wavelength; An imaging lens module is disposed on the light path of the infrared light reflected by the object; and a filter is disposed on the light path of the infrared light reflected by the object, wherein the filter has a first transmission band for the transmission spectrum of the perpendicularly incident light, and a first short-wavelength side cutoff edge of the first transmission band at least partially overlaps with a wavelength range of more than 10% of the peak intensity of the infrared light spectrum.
2. The infrared imaging device as claimed in claim 1, wherein the filter has a second transmission band for the transmission spectrum of light incident at an angle of incidence of 30 degrees, wherein a second short-wavelength side cutoff edge of the second transmission band falls on the short-wavelength side of the first short-wavelength side cutoff edge.
3. The infrared imaging device as claimed in claim 1, wherein the filter has a second transmission band for the transmission spectrum of light incident at an angle of 30 degrees, wherein the second transmission band overlaps with the wavelength range to a greater extent than the first transmission band overlaps with the wavelength range.
4. The infrared imaging device as claimed in claim 1, wherein the 50% transmittance of the first short-wavelength side cutoff edge is located on the long-wavelength side of the peak wavelength.
5. The infrared imaging device as claimed in claim 1, wherein the 50% transmittance of the first short-wavelength side cutoff edge is located on the short-wavelength side of the peak wavelength.
6. The infrared imaging device as claimed in claim 1, wherein the proportion of energy of the infrared light penetrating the filter when it is incident perpendicularly to the filter is less than the proportion of energy of the infrared light penetrating the filter when it is incident obliquely to the filter at an incident angle of 30 degrees.
7. The infrared light imaging device as claimed in claim 1, wherein the infrared light source is a light-emitting diode.
8. The infrared imaging apparatus of claim 1, wherein the filter has at least one cutoff band for the transmission spectrum of vertically incident light.
9. The infrared imaging device as claimed in claim 1, wherein the wavelength at 50% transmittance of a long-wavelength side cutoff edge of the first transmission band is more than 40 nanometers greater than the peak wavelength.
10. The infrared light imaging device as claimed in claim 1, wherein the filter comprises a multilayer film filter structure, a light-absorbing material, or a composite filter structure.
11. The infrared imaging device as claimed in claim 1, wherein the peak wavelength falls in the range of 850 nanometers to 940 nanometers.
12. The infrared imaging device as claimed in claim 1, wherein the imaging lens module is disposed between the object and the filter.
13. The infrared imaging device as claimed in claim 1, wherein the filter is disposed between the object and the imaging lens module.
14. The infrared imaging device as claimed in claim 1, wherein the filter is disposed within the imaging lens module.