Quartz structure with stable and controllable ultraviolet light transmittance

TWM687497UActive Publication Date: 2026-09-11SINGWEI TECH CO LTD
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Patent Information

Application Number
TW115205236
Authority / Receiving Office
TW · TW
Patent Type
Utility models
Current Assignee / Owner
Filing Date
2026-06-08
Publication Date
2026-09-11
Estimated Expiration
2036-06-07

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    Figure TWG2TB001911248_003
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Abstract

A quartz structure with stable and controllable ultraviolet light transmittance includes a quartz plate and a metal island structure. The quartz plate has a diameter of 350-375 mm and a thickness of 20-28 mm. The metal island structure is disposed on the surface of the quartz plate. Under a background vacuum of 10⁻⁵ to 10⁻⁷ torr, magnetron sputtering technology is used to induce a stable DC bias by controlling the DC energy density. A metal island structure with a thickness of 20 nm to 30 nm is sputtered onto the surface of the quartz plate using physical vapor deposition technology. The metal island structure comprises a plurality of metal particles and gaps between the particles, wherein the total volume of the metal particles and their gaps accounts for 65% to 75% of the volume of the metal island structure. The material of the metal island structure is selected from the group consisting of titanium, nickel, cobalt, or alloys thereof.
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Claims

1. A quartz structure with stable and controllable ultraviolet light transmittance, comprising: A quartz plate with a diameter of 350-375 mm and a thickness of 20-28 mm; and a metal island structure disposed on the surface of the quartz plate. Under the condition of a background vacuum of 10⁻⁵ to 10⁻⁷ torr, magnetron sputtering technology is used to induce a stable DC bias by controlling the DC energy density, and a metal island structure with a thickness of 20 nm to 30 nm is sputtered on the surface of the quartz plate using physical vapor deposition technology. The metal island structure includes a plurality of metal grains and gaps between the metal grains, wherein the total volume of the metal grains and the gaps between them accounts for 65% to 75% of the volume of the metal island structure, and the materials of the metal grains and the metal island structure are selected from the group consisting of titanium, nickel, cobalt or their alloys.

2. The quartz structure with stable and controllable ultraviolet light transmittance as described in claim 1, wherein the discontinuous film formed by the metal grains and the metal island structure has light absorption or extinction properties, so that the quartz structure with stable and controllable ultraviolet light transmittance has a stable transmittance of 55% to 70% for ultraviolet light with wavelengths of 175nm to 385nm, thereby improving the porous silica network structure precursor that needs to be photocured or phase-transformed, so as to stabilize the dielectric constant and the uniformity of dielectric loss of the material.

3. The quartz structure with stable and controllable ultraviolet light transmittance as described in claim 1 further includes a diffusion bonding layer formed between the surface of the quartz plate and the metal island structure, the diffusion bonding layer comprising a metal oxide, a metal silicate, or a mixture thereof.

4. The quartz structure with stable and controllable ultraviolet light transmittance as described in claim 3, wherein when the material of the metal island structure is titanium, the diffusion bonding layer contains a TiSi or TiO structure, so that the metal grains and the metal island structure are firmly attached to the surface of the quartz plate and will not desorb due to thermal expansion and contraction or energy stress, thus forming defective particles and affecting the process yield.